Abstract: A capacitor and a method of processing an anode metal foil are presented. The method includes electrochemically etching the metal foil to form a plurality of tunnels. Next, the etched metal foil is disposed within a widening solution to widen the plurality of tunnels. Exposed surfaces of the etched metal foil are then oxidized. The method includes removing a section of the etched metal foil, where the section of the etched metal foil includes exposed metal along an edge. The section of the etched metal foil is placed into a bath comprising water to form a hydration layer over the exposed metal on the section of the etched metal foil. The method also includes assembling the section of the etched metal foil having the hydration layer as an anode within a capacitor.

Abstract: Water-splitting devices and methods for manufacturing water-splitting devices or solar cells is disclosed. The method seeks to provide a relatively high-volume, low-cost mass-production method. In one example, the method facilitates simultaneous co-assembly of one or more sub-units and two or more polymer films or sheets to form a water-splitting device. According to another aspect, there is provided an improved water-splitting device. In one example form, there is provided a water-splitting device which includes a first electrode for producing oxygen gas and a second electrode for producing hydrogen gas from water. The first electrode and the second electrode are positioned between a first outer polymer layer and a second outer polymer layer, and at least one spacer layer is positioned between the first outer polymer layer and the second outer polymer layer.

Abstract: The present specification relates to a solar cell.

Abstract: Forward and back electron transfer at molecule oxide interfaces are pivotal events in dye-sensitized solar cells, dye-sensitized photoelectrosynthesis cells and other applications. Disclosed herein are self-assembled multilayers as a strategy for manipulating electron transfer dynamics at these interfaces. The multilayer films are achieved by stepwise layering of bridging molecules, linking ions, and active molecule on an oxide surface. The formation of the proposed architecture is supported by ATR-IR and UV-Vis spectroscopy. Time-resolved emission and transient absorption establishes that the films exhibit an exponential decrease in electron transfer rate with increasing bridge length. The findings indicate that self-assembled multilayers offer a simple, straight forward and modular method for manipulating electron transfer dynamics at dye-oxide interfaces.

Abstract: The present invention relates to a dye-sensitized solar cell in which a contaminant blocking partition wall having a material (for example, a bismuth-based glass frit material, a PbO-based glass frit material and the like) similar to those of upper and lower plates can be additionally arranged at the outermost periphery of an inner partition wall exposed to edges of the upper and lower plates.

Abstract: A supercapacitor electrode comprising a solid graphene foam impregnated with a liquid or gel electrolyte, wherein the solid graphene foam is composed of multiple pores and pore walls, wherein pore walls contain a pristine graphene material having essentially zero % of non-carbon elements, or a non-pristine graphene material having 0.001% to 5% by weight of non-carbon elements wherein non-pristine graphene is selected from graphene oxide, reduced graphene oxide, graphene fluoride, graphene chloride, graphene bromide, graphene iodide, hydrogenated graphene, nitrogenated graphene, chemically functionalized graphene, or a combination thereof, and the solid graphene foam, when measured in a dried state without electrolyte, has a physical density from 0.01 to 1.7 g/cm3, a specific surface area from 50 to 3,200 m2/g, a thermal conductivity of at least 200 W/mK per unit of specific gravity, and/or an electrical conductivity no less than 2,000 S/cm per unit of specific gravity.

Abstract: Disclosed here is a method for increasing the hydrophilicity of a carbon aerogel, comprising heating the carbon aerogels under air or a gas having a higher concentration of oxygen than air at a temperature of about 200°-500° C. to obtain an activated carbon aerogel. Also disclosed include an activated carbon aerogel obtained by the method, an electrode comprising the activated carbon aerogel, and a supercapacitor or capacitive deionization device comprising the electrode.

Abstract: An electric double layer device is configured such that a lower terminal is directly withdrawn from a lower collecting plate in the same manner as the manner in which an upper terminal is directly withdrawn from an upper collecting plate, thereby improving productivity and ease of assembly, and in addition increasing connection force.

Abstract: An object is to provide an aluminum plate having favorable coating properties and pre-doping characteristics. An aluminum plate having a plurality of through holes that penetrate in a thickness direction, in which an average opening diameter of the through holes is 1 ?m to 100 ?m, a density of the through holes is 50 through holes/mm2 to 2,000 through holes/mm2, and an inter-hole distance between adjacent through holes is 300 ?m or less.

Abstract: A method for producing a solid electrolytic capacitor element, which includes, in the following order, a sintering step of sintering a valve-acting metal to form an anode body, a chemical conversion step to form a dielectric layer on the surface layer of the anode body, a step of forming a semiconductor layer comprising a conductive polymer by immersing the anode body in a solution of monomers of a conductive polymer to thereby polymerize the monomers, and a step of forming a conductor layer on the anode body. The method is characterized in conducting the step of forming a semiconductor layer under the condition where photopolymerization of the monomers of the conductive polymer is not caused.

Abstract: A composition of a capacitor and a method to form same are disclosed. The capacitor comprises a first electrode, a second electrode, and at least one cellular material disposed between said first electrode and said second electrode. Further, the capacitor is at least partially impregnated with one or more liquid prepolymers comprising an electrolyte material, which is cured to form a polymeric matrix.

Abstract: A key structure includes a keycap, a scissors-type connecting element, a metal triggering element, a switch circuit board, a base and a buffering element. The buffering element is integrally formed with the keycap, and fixed on an inner surface of the keycap. The buffering element is made of a soft material. As the keycap is depressed and moved, the buffering element is pushed by the keycap and subject to deformation. Consequently, the movable distance of the keycap is increased. That is, the tactile feel of depressing the keycap is enhanced.

Abstract: A medium- or high-voltage switch (10), comprising a high-vacuum enclosure (111); first and second contacts (121, 122) that are mounted to be movable in translation relative to each other inside the enclosure (111) between an open position in which the first and second contacts (121, 122) are spaced apart; and a closed position in which the first and second contacts (121, 122) are in electrical contact. The switch (10) further comprises a conductor (210, 220, 230) arranged inside the enclosure (111) in such a manner that there exists a pressure threshold inside the enclosure (111) from which partial discharges are generated by said conductor, at least when the first and second contacts (121, 122) are in the closed position and the medium or high voltage is applied to the switch (10). The invention further relates to a switch assembly and to a method of testing such a switch.

Abstract: A combination switch lever includes a cylinder body including an opening, a plurality of switches to operate an electric component disposed in the vehicle, a flexible board that is disposed inside the cylinder body and that includes a circuit part and a non-circuit part disposed outside the circuit part in a width direction, and a first guide member and a second guide member that are disposed inside the cylinder body so as to be opposite to each other sandwiching the flexible board. An inside projection is formed at a vicinity of the opening of the cylinder body on an opposite surface of the first guide member and/or the second guide member, and the inside projection presses the non-circuit part. The first guide member and the second guide member include an adjacent opposite surface such that an opposite distance therebetween is partially narrowed.

Abstract: The present application contemplates a switching device comprising; an outer casing defining an internal volume of the switching device; one or more electric poles, each electric pole comprising one or more mobile contacts and one or more contacts adapted to be coupled or uncoupled during a switching operation of the switching device; a contact shaft accommodated in the internal volume of the switching device and adapted to rotate about a rotation axis during a switching operation of the switching device, the contact shaft having a body comprising one or more contact seats to accommodate at least partially the mobile contacts, so that the mobile contacts rotate with the contact shaft about the rotation axis during a switching operation of the switching device; a control mechanism comprising a supporting frame fixed to the outer casing to provide support to movable members of the control mechanism and one or more connecting rods to provide a force to move the contact shaft during a switching operation of the s

Abstract: An environmentally protected switch and water activated device using the switch is disclosed. The switch comprises an elongate housing having an open end and divided into a pair of chambers and into which a probe is inserted. When water infiltrates the housing an electrical circuit is completed between the two probes. There is also disclosed a lens/selector assembly comprising a selector ring encircling a lens and a wave spring which biases the selector ring into one of a number of predetermined positions around the lens. Illustratively, a magnet is placed within the selector ring a position of which can be detected by electronics within the lens.

Abstract: The present invention relates to a magnetic proximity switch, comprising a casing, and a balance plate is transversely provided in the middle within the casing; a dynamic magnet and a static magnet are disposed in parallel on the left and right sides above the balance plate; the left end of the balance plate is hinged within the casing; the lower surface of the right end of the balance plate is provided with a dynamic contact; the balance plate is connected to the dynamic magnet via an elastic component A; a wiring terminal A and a wiring terminal B are fixed in parallel on the left and right sides at the bottom in the casing; the top of the wiring terminal A is connected to the balance plate via an elastic component B; the upper portion of the wiring terminal B is transversely bent.

Abstract: An electric pulse generator configured to power at least one load and including an electric discharge switch including at least one piston and a chamber in which the piston can move, a propellant gas-generating trigger for moving the piston, at least one punch rigidly connected to an end of the piston, and at least one stack of layers formed from at least one pair of electrodes separated by a layer of dielectric material. The electric pulse generator further includes an energy storage device associated with the or each pair of electrodes of the electric discharge switch in at least one series connection, the load or each load being configured to be connected in parallel with the or each series connection.

Abstract: Methods, devices, and systems for synchronizing switching times of relays to a zero-crossing are described herein. One device includes a memory, and a processor configured to execute executable instructions stored in the memory to receive phase information of an alternating-current (AC) electric mains, determine, from the phase information, a zero-crossing of the phase of the AC electric mains, determine a reference time based on the zero-crossing for a number of relays corresponding to a number of relay controllers, and transmit the reference time to the number of relay controllers.

Abstract: A magnetic latching relay includes a casing containing a coil assembly, an electrically conductive plate and a static plate. A reed assembly is installed on surfaces opposite to the electrically conductive plate and the static plate and includes a reed, a pull-to-disconnect plate installed onto the reed, and a contact formed on the pull-to-disconnect plate. The casing includes a pushing latch latched to the coil assembly. If the relay is connected, the contacts of the reed assemblies of the electrically conductive plate and the static plate will touch each other, or else the pushing latch will be moved axially along the static plate and inserted between the pull-to-disconnect plates of the reed assemblies of the electrically conductive plate and the static plate to separate the contacts, so as to monitor the connected/disconnected status of the relay. An external display device is provided for displaying the connected/disconnected status.

Abstract: An x-ray tube can include an electron-emitter, which can include a tube-shape with a minimum inside diameter of at least 0.5 millimeters. The electron-emitter can provide field-emission of electrons, and thus can avoid the electrical power required for heating, and can avoid degradation due to high temperature of, a thermionic-emission electron-emitter. This type of electron-emitter, with a tube-shape, can have a relatively large electron-emission region, allowing high electrical current without excessive current density.

Abstract: An electron beam apparatus addresses blanking issues resulting from sinking high-power heat onto an aperture diaphragm by evenly spreading heat on the aperture diaphragm. The apparatus can include an aperture diaphragm and a deflector that deflects the electron beam on the aperture diaphragm. The electron beam is directed at the aperture diaphragm in a pattern around the aperture. The pattern may be a circle, square, or polygon. The pattern also may include a variable locus relative to the aperture.

Abstract: A charged particle beam writing apparatus according to an embodiment starts a wiring operation when the sum of the amount of shot data stored in a buffer memory of a transfer control calculator, the amount of shot data being transferred by a transfer unit, and the amount of shot data stored in a buffer memory of a deflection control circuit reaches the amount of data for one stripe region.

Abstract: A method for generating cross-sectional profiles using a scanning electron microscope (SEM) includes scanning a sample with an electron beam to gather an energy-dispersive X-ray spectroscopy (EDS) spectrum for an energy level to determine element composition across an area of interest. A mesh is generated to locate positions where a depth profile will be taken. EDS spectra are gathered for energy levels at mesh locations. A number of layers of the sample are determined by distinguishing differences in chemical composition between depths as beam energies are stepped through. A depth profile is generated for the area of interest by compiling the number of layers and the element composition across the mesh.

Abstract: The present disclosure provides one embodiment of a method that includes slicing a first sub-polygon out of the pattern layout and writing the first sub-polygon onto the substrate using a beam with a first beam setting that is associated with the first sub-polygon. The method additional includes slicing a second sub-polygon out of the remaining pattern layout that does not include the first sub-polygon. The second sub-polygon interfaces with the first sub-polygon on at least one edge. Also, the method includes, without turning off the beam after writing the first sub-polygon onto the substrate, writing the second sub-polygon onto the substrate with a second beam setting that is associated with the second sub-polygon.

Abstract: Embodiments of the present disclosure include a radial frequency plasma source having a split type inner coil assembly. In one embodiment, the split type inner coil assembly comprises two intertwining coils. In another embodiment, the split type inner coil assembly includes looped coils forming a dome.

Abstract: A gas injector for a substrate processing system includes a first injector housing including a base portion defining a first gas flow channel; a projecting portion extending from the base portion; and a second gas flow channel extending through the base portion and the projecting portion. The gas injector includes a second injector housing including a first cavity including a first opening, a second opening and a first plurality of gas through holes arranged around the second opening. The first gas flow channel communicates with the first plurality of gas through holes. The second injector housing includes a second cavity that includes a second plurality of gas through holes and that extends from the second opening of the first cavity. The second gas flow channel communicates with the second plurality of gas through holes. Gas in the first and second gas flow channels flows into a processing chamber without mixing.

Abstract: Implementations described herein relate to apparatus and methods for performing atomic layer etching (ALE). Pulsed plasma generation and subsequent bias application to plasma afterglow may provide for improved ALE characteristics. Apparatus described herein provide for plasma generation from one or more plasma sources and biasing of plasma afterglow to facilitate material removal from a substrate.

Abstract: Methods are disclosed for etching a substrate. The method includes preferentially coating cover ring relative other chamber components in the processing chamber, while under vacuum, and while a substrate is not present in the processing chamber. The substrate is subsequently etched the processing chamber. After etching, the interior of the processing chamber is cleaned after the substrate has been removed.

Abstract: A micromachining process includes exposing the work piece surface to a precursor gas including a compound having an acid halide functional group; and irradiating the work piece surface with a beam in the presence of the precursor gas, the precursor gas reacting in the presence of the particle beam to remove material from the work piece surface.

Abstract: The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.

Abstract: A vacuum pumping line plasma source is provided. The plasma source includes a body defining a generally cylindrical interior volume extending along a central longitudinal axis. The body has an input port for coupling to an input pumping line, an output port for coupling to an output pumping line, and an interior surface disposed about the generally cylindrical interior volume. The plasma source also includes a supply electrode disposed adjacent to a return electrode, and a barrier dielectric member, a least a portion of which is positioned between the supply electrode and the return electrode. The plasma source further includes a dielectric barrier discharge structure formed from the supply electrode, the return electrode, and the barrier dielectric member. The dielectric barrier discharge structure is adapted to generate a plasma in the generally cylindrical interior volume.

Abstract: A system and method monitoring a plasma with an optical sensor to determine the operations of a pulsed RF signal for plasma processing including a plasma chamber with an optical sensor directed toward a plasma region. An RF generator coupled to the plasma chamber through a match circuit. An RF timing system coupled to the RF generator. A system controller is coupled to the plasma chamber, the RF generator, the optical sensor, the RF timing system and the match circuit. The system controller includes a central processing unit, a memory system, a set of RF generator settings and an optical pulsed plasma analyzer coupled to the optical sensor and being capable to determine a timing of a change in state of an optical emission received in the optical sensor and/or a set of amplitude statistics corresponding to an amplitude of the optical emission received in the optical sensor.

Abstract: A target includes a target plate and a stabilizing layer which is joined to the rear side of the target plate. The stabilizing layer was produced by high-kinetic-energy spraying of stabilizing material onto the target plate. A process for producing a target is also provided.

Abstract: A method of mass spectrometry is disclosed comprising separating ions temporally in a first device and analysing the mass or mass to charge ratio of the ions or of product or fragment ions derived from the ions in a mass or mass to charge ratio analyser disposed downstream of the first device. The method further comprises obtaining a first set of drift times for the ions through the first device by measuring ion arrival times and determining the transit time of the ions and/or of the product or fragment ions through one or more intermediate regions or devices disposed between the first device and the mass to charge ratio analyser. The method further comprises obtaining a second set of drift times for the ions through the first device by correcting the first set of drift times to account for the determined transit times.

Abstract: An ion mobility separator and a method of separating ions according to their ion mobility are disclosed. An RF ion guide is provided having a plurality of electrodes that are arranged to form an ion guiding path that extends in a closed loop. RF voltages are supplied to at least some of the electrodes in order to confine ions within said ion guiding path. A DC voltage gradient is maintained along at least a portion of a longitudinal axis of the ion guide, wherein the voltage gradient urges ions to undergo one or more cycles around the ion guide and thus causes the ions to separate according to their ion mobility as the ions pass along the ion guide. The closed loop ion guide enables the resolution of the ion mobility separator to be increased without necessitating a large device, since the drift length through the device can be increased by causing the ions to undergo multiple cycles around the device.

Abstract: A sample introduction system for a spectrometer comprises a desolvation region that receives or generates sample ions from a solvent matrix and removes at least some of the solvent matrix from the sample ions. A separation chamber downstream of the desolvation region has a separation chamber inlet communicating with the desolvation region, for receiving the desolvated sample ions along with non-ionised solvent and solvent ion vapours. The separation chamber has electrodes for generating an electric field within the separation chamber, defining a first flow path for sample ions between the separation chamber inlet and a separation chamber outlet. Unwanted solvent ions and non-ionised solvent vapours are directed away from the separation chamber outlet. The sample introduction system has a reaction chamber with an inlet communicating with the separation chamber outlet, for receiving the sample ions from the separation chamber and for decomposing the received ions into smaller products.

Abstract: An ion guide is disclosed comprising a first array of electrodes and a second array of electrodes and one or more apertures or ion exit regions. The first array of electrodes comprises a first plurality of arcuate electrodes arranged in parallel with one another and such that said first plurality of arcuate electrodes at least partially surround said one or more apertures or ion exit regions and/or wherein said second array of electrodes comprises a second plurality of arcuate electrodes arranged in parallel with one another and such that said second plurality of arcuate electrodes at least partially surround said one or more apertures or ion exit regions.

Abstract: The present invention relates to an electron bean injection control of a mass spectrometer. A mass spectrometer of the present invention includes: a reference waveform generator configured to generate a reference waveform signal having one type of a square wave and a sine wave, a waveform generator configured to generate a sync signal synchronized with the reference waveform signal; an RF module configured to generate an RF voltage signal from the reference waveform signal and apply the RF voltage signal to an RF electrode in the ion trap, an electron beam generator configured to control an operation of an ultraviolet (UV) diode for generating an electron beam injected into the ion trap according to an input control signal, and a control circuit configured to generate the control signal by using the square wave signal.

Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.

Abstract: The present invention provides an array substrate and a manufacturing method thereof. The manufacturing method of the array substrate according to the present invention forms a gate electrode in the same metal layer with source and drain electrodes and divides a common electrode layer that is conventionally in the form of an entire surface into two portions, of which one serves as a common electrode, while the other portion feeds an input of a gate scan signal thereby eliminating an operation of forming an interlayer insulation layer and thus reducing manufacturing cost of the operation. The array substrate of the present invention comprises a gate electrode that is formed in the same metal layer with source and drain electrodes so that no interlayer insulation layer is present between the gate electrode and the source and drain electrodes, thereby simplifying the structure and reducing the manufacturing cost of the array substrate.

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

Abstract: An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.

Abstract: A method for forming a heteroepitaxial layer includes forming an epitaxial grown layer on a monocrystalline substrate and patterning the epitaxial grown layer to form fins. The fins are converted to porous fins. A surface of the porous fins is treated to make the surface suitable for epitaxial growth. Lattice mismatch is compensated for between an epitaxially grown monocrystalline layer grown on the surface and the monocrystalline substrate by relaxing the epitaxially grown monocrystalline layer using the porous fins to form a relaxed heteroepitaxial interface with the monocrystalline substrate.

Abstract: A method for forming a heteroepitaxial layer includes forming an epitaxial grown layer on a monocrystalline substrate and patterning the epitaxial grown layer to form fins. The fins are converted to porous fins. A surface of the porous fins is treated to make the surface suitable for epitaxial growth. Lattice mismatch is compensated for between an epitaxially grown monocrystalline layer grown on the surface and the monocrystalline substrate by relaxing the epitaxially grown monocrystalline layer using the porous fins to form a relaxed heteroepitaxial interface with the monocrystalline substrate.

Abstract: A method of growing a single-crystal, silicon carbide epitaxial film on a silicon carbide substrate by chemical vapor deposition is disclosed that results in a stress value of the epitaxial film within ±7.8 MPa. For example, from the start of the growth of the epitaxial film until completion, introduction of a source gas including a gas containing silicon, a gas containing carbon, and a gas containing chlorine into a reaction chamber and performing epitaxial growth is alternately performed with suspension of the supply of the gas containing silicon and the gas containing carbon into the reaction chamber while furnace temperature is maintained as is during performing processing in a gas atmosphere containing only hydrogen, or hydrogen and hydrogen chloride, whereby the epitaxial film is grown. Employing such a method enables manufacture of a substrate having a silicon carbide epitaxial film with minimal warpage.

Abstract: An oxide semiconductor includes an oxide having a layered structure expressed by an expression of a product of [(AO) (ZO)mi(BO) (ZO)ni]i from i=1 to L. In the product, an atom A is a positive monovalent element, an atom Z is a positive divalent element, an atom B is a positive trivalent element, L is a positive integer, and mi and ni are independent integers greater than or equal to zero. A sum from i=1 to L of (mi+ni) is not zero.

Abstract: A method of synthesizing catalyst self-doped ZnS nanostructures including preparing a silicon substrate by vacuum depositing a metal catalyst nanostructure on an ultrathin silicon oxide layer, doping a zinc sulfide (ZnS) nanostructure with a catalyst of the metal catalyst nanostructure including at least one of gold (Au), manganese (Mn), and tin (Sn), and modulating ZnS intrinsic defects by the concentration of the catalyst and the size of the ZnS and metal catalyst nanostructures, in which the catalyst is dissolved in a nanowire of the ZnS nanostructure during growth, the concentration of the catalyst in the nanowire is dependent on the size of the catalyst, and the doping is tuned by growth conditions.

Abstract: Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.

Abstract: Methods of fabricating a semiconductor device are provided. The methods may include etching a bulk pattern on a peripheral region to form patterns and then forming a layer on both a cell region and a peripheral region. The methods may include forming line patterns that extend from the cell region onto the peripheral region and then forming a layer on both the cell region and a peripheral region.