Abstract: A power loss protection integrated circuit includes a current switch circuit portion (eFuse) and an autonomous limit checking circuit. The limit checking circuit includes an input analog multiplexer, an ADC, a plurality of capture registers, a state machine, and a flag output terminal. For each capture register, the limit checking circuit further includes an associated lower limit register and an associated upper limit register. The state machine controls the multiplexer and the capture registers so the ADC digitizes voltages on various nodes to the monitored, and stores the results into corresponding capture registers. In integrated circuit has circuitry that allows both a high voltage as well as a high current to be monitored. The value in a capture register is compared to upper and lower limit values. If any capture value is determined to be outside the limits, then a digital flag signal is asserted onto the flag output terminal.

Abstract: A fuse component (36) configured to provide overcurrent protection for an electric motor (20) comprises a spiral (41) of a plurality of coaxial wire loops (44) and an outer insulating sleeve (39) surrounding at least a portion of the spiral (41). The overcurrent threshold of the fuse component (36) may be adjusted by changing the number of loops in the spiral (41) or the cross-section area of the wire in the spiral (41). The fuse component (41) may also function as an inductor (35) and/or connected to a speed adjustable resistor.

Abstract: It is aimed to provide a fuse holder with a novel structure capable of improving insertion operability in the fuse holder for holding a plurality of fuses. A plurality of fuse holding portions (26a, 26b) are provided into which main body portions (16, 16) of fuses (12a, 12b) are to be mounted and in which lead portions (14, 14) of the fuses (12a, 12b) are held in a projecting state. Holding positions of the fuses (12a, 12b) by the plurality of fuse holding portions (26a, 26b) are made different from each other in a projecting direction of the lead portions (14) from the main body portions (16) in the fuses (12a, 12b).

Abstract: Fuse load-break switch (1) for low-voltage high-power fuses, a fuse contact pair for receiving a fuse (5A, 5B, 5C) being provided within a housing (2) of the fuse load-break switch (1) for each current phase to be disconnected, characterized in that a thermal power loss brought about by the fuses (5A, 5B, 5C) is dissipated into at least one heat dissipation duct (3) provided laterally on the housing (2) of the fuse load-break switch (1).

Abstract: Display device includes a display panel. The display panel includes a first substrate, a sealant, and, a second substrate fastended to the first substrate via the sealant. At least one of the first substrate and the second substrate is a non-planar substrate including at least two portions correspondingly extending in different planes.

Abstract: A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers.

Abstract: An apparatus for generating x-rays includes an electron beam generator and a first device arranged to apply an RF electric field to accelerate the electron beam from the generator. A photon source is arranged to provide photons to a zone to interact with the electron beam from the first device so as to generate x-rays via inverse-Compton scattering. A second device is arranged to apply an RF electric field to decelerate the electron beam after it has interacted. The first and second devices are connected by RF energy transmission means arranged to recover RF energy from the decelerated electron beam as it passes through the second device and transfer the recovered RF energy into the first device.

Abstract: The present invention provides an X-ray generator including an X-ray tube 2 radiating primary X-rays X1 to a specimen S, a housing 3 accommodating the X-ray tube 2, an X-ray radiation area controller 4 limiting the radiation area of the primary X-rays X1 from the X-ray tube 2 to the specimen S, and a device holder 5 holding the X-ray radiation area controller 4 with respect to the housing 3. The X-ray tube includes a case 6, an electron ray source 7 generating electron rays, and a target unit 8 having a base fixed to the case and receiving electron rays through a protruding free end. The device holder has a fixed-base 5a fixed to the housing, directly under the base of the target unit, and a supporting extension 5b extending from the fixed-base in the protrusion direction of the target unit and supporting the X-ray radiation area controller.

Abstract: Provided herein are approaches for controlling particle trajectory from a beam-line electrostatic element. In an exemplary approach, a beam-line electrostatic element is disposed along a beam-line of an electrostatic filter (EF), and a voltage is supplied to the beam-line electrostatic element to generate an electrostatic field surrounding the beam-line electrostatic element, agitating a layer of contamination particles formed on the beam-line electrostatic element. A trajectory of a set of particles from the layer of contamination particles is then modified to direct the set of particles to a desired location within the EF. In one approach, the trajectory is controlled by providing an additional electrode adjacent the beam-line electrostatic element, and supplying a voltage to the additional electrode to control a local electrostatic field in proximity to the beam-line electrostatic element.

Abstract: A method for preparing plan-view transmission electron microscopy specimens is disclosed. The method employs isotropic vapor-phase etching in conjunction with one or more integrated etch-stop layers that give rise to a support membrane having a well-controlled, substantially uniform thickness. In some embodiments, the support membrane comprises an etch-stop layer that is formed using a high-precision formation process, such as atomic-layer deposition, oxidation, and the like. As a result, formation of the support membrane does not require additional processes, such as mechanical polishing or ion milling, to achieve its desired thickness. The method enables reduced specimen-preparation time, as well as simultaneous preparation of multiple specimens having large, uniformly thick areas for imaging.

Abstract: The objective of the present invention is to maintain the surrounding of a sample at atmospheric pressure and efficiently detect secondary electrons. In a sample chamber of a charged particle device, a sample holder (4) has: a gas introduction pipe and a gas evacuation pipe for controlling the vicinity of a sample (20) to be an atmospheric pressure environment; a charged particle passage hole (18) and a micro-orifice (18) enabling detection of secondary electrons (15) emitted from the sample (20), co-located above the sample (20); and a charged particle passage hole (19) with a hole diameter larger than the micro-orifice (18) above the sample (20) so as to be capable of actively evacuating gas during gas introduction.

Abstract: The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.

Abstract: A device for detecting X-rays radiated out of a substrate surface, said device comprising at least one X-ray detector, a resolver grating and a modulator grating, said resolver grating with at least one opening facing towards said X-ray detector is arranged in front of said X-ray detector. Said modulator grating is provided between said resolver grating and said substrate at a predetermined distance from said resolver grating and said substrate, where said modulator grating having a plurality of openings in at least a first direction, wherein said x-rays from said surface is spatially modulated with said modulator grating and resolver grating.

Abstract: A charged particle beam writing apparatus includes a storage unit to store writing data of a region to be written in a target object, a first dividing unit to read the writing data and divide the region to be written into at least one first data processing region that overlaps with at least a first region where a pattern has been arranged, and at least one second data processing region that overlaps with a second region where no pattern is arranged without overlapping with the first region, a data processing unit to perform data processing of predetermined data processing contents for at least one first data processing region without performing the data processing for at least one second data processing region, and a writing unit to write a pattern on the target object, based on processed data.

Abstract: A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.

Abstract: A radio frequency (RF) control system including a RF generator having a power amplifier that outputs a RF signal and a controller. A matching network receives the RF signal and generates a plurality of RF output signals. The matching network includes a ratio tuning element to vary a ratio of power between the plurality of RF output signals. The first controller communicates a ratio control signal to the matching network, and the matching network controls the ratio tuning element in accordance with the ratio control signal. The RF controls system operates in a continuous and pulse mode of operation. The controller can also control the rise or fall of a pulse edge or a level or duration of incremental changes in the pulse edge.

Abstract: Described herein are techniques for supplying radio frequency (RF) power to a large area plasma source so as to produce a plasma that is substantially uniform in two spatial dimensions. The RF power may be supplied by a power supply system, which may comprise a RF source and a distribution network. The distribution network may comprise a matching network, and a branching circuit that divides the RF power into several branches. Each of the branches of the distribution network may include a phase shifter that shifts the RF signal (which carries the RF power) by an odd multiple of 90°, and a blocking filter which blocks any harmonics and other unwanted frequencies which are reflected from a plasma source. The output of the branches may be coupled to feed points that are spatially distributed over the one or more electrodes of the plasma source.

Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and sputtered metal atoms are removed from the electron beam to reduce contamination.

Abstract: An open plasma lamp includes a cavity section. A gas input and gas output of the cavity section are arranged to flow gas through the cavity section. The plasma lamp also includes a gas supply assembly fluidically coupled to the gas input of the cavity section and configured to supply gas to an internal volume of the cavity section. The plasma lamp also includes a nozzle assembly fluidically coupled to the gas output of the cavity section. The nozzle assembly and cavity section are arranged such that a volume of the gas receives pumping illumination from a pump source, where a sustained plasma emits broadband radiation. The nozzle assembly is configured to establish a convective gas flow from within the cavity section to a region external to the cavity section such that a portion of the sustained plasma is removed from the cavity section by the gas flow.

Abstract: Provided are a method and a system for managing semiconductor manufacturing equipment. The method may be performed using an equipment computer and may include ordering to perform a preventive maintenance to a chamber and parts in the chamber, monitoring a result of the preventive maintenance to the chamber and the parts, and performing a manufacturing process using plasma reaction in the chamber, if the result of the preventive maintenance is normal. The monitoring the result of the preventive maintenance may include a pre-screening method monitoring the result of the preventive maintenance using electric reflection coefficients obtained from the chamber and the parts without using the plasma reaction.

Abstract: A gas supply system for providing a plurality of process gases to a process chamber includes a plurality of mass flow controllers each arranged to receive a respective subset of the plurality of process gases. Each of the respective subsets includes more than one of the process gases, and at least one of the process gases is provided to more than one of the plurality of mass flow controllers. Respective valves are arranged upstream of each of the plurality of mass flow controllers to selectively provide the respective subsets to the mass flow controllers. A first quantity of the plurality of mass flow controllers is less than a total number of the plurality of process gases to be supplied to the process chamber. The first quantity is equal to a maximum number of the plurality of process gases to be used in the process chamber at any one time.

Abstract: A method of producing a plasma is provided. The method includes providing at least three hollow cathodes, including a first hollow cathode, a second hollow cathode, and a third hollow cathode. Each hollow cathode has a plasma exit region. The method further includes providing a source of power capable of producing multiple output waves, including a first output wave, a second output wave, and a third output wave. The first output wave and the second output wave are out of phase, the second output wave and the third output wave are out of phase, and the first output wave and the third output wave are out of phase. Each hollow cathode is electrically connected to the source of power such that the first hollow cathode is electrically connected to the first output wave, the second hollow cathode is electrically connected to the second output wave, and the third hollow cathode is electrically connected to the third output wave.

Abstract: A plasma source is provided. The plasma source includes at least three hollow cathodes, including a first hollow cathode, a second hollow cathode, and a third hollow cathode, each hollow cathode having a plasma exit region. The plasma source includes a source of power capable of producing multiple output waves, including a first output wave, a second output wave, and a third output wave, wherein the first output wave and the second output wave are out of phase, the second output wave and the third output wave are out of phase, and the first output wave and the third output wave are out of phase. Each hollow cathode is electrically connected to the source of power such that the first hollow cathode is electrically connected to the first output wave, the second hollow cathode is electrically connected to the second output wave, and the third hollow cathode is electrically connected to the third output wave. Electrical current flows between the at least three hollow cathodes that are out of electrical phase.

Abstract: A method for processing a target object includes a formation step of forming a silicon oxide film in a processing chamber by repeatedly executing a sequence including a first step of supplying a first gas containing aminosilane-based gas, a second step of purging a space in the processing chamber after the first step, a third step of generating a plasma of a second gas containing oxygen gas after the second step, and a fourth step of purging the space after the third step. The method further includes a preparation step executed before the target object is accommodated in the processing chamber and a processing step of performing an etching process on the target object. The preparation step is performed before the processing step. The formation step is performed in the preparation step and the processing step. In the first step, a plasma of the first gas is not generated.

Abstract: In some examples, a method comprising depositing a functional layer (e.g., a magnetic layer) over a substrate; depositing a granular layer over the functional layer, the granular layer including a first material defining a plurality of grains separated by a second material defining grain boundaries of the plurality of grains; removing the second material from the granular layer such that the plurality of grains of the granular layer define a hard mask layer on the functional layer; and removing portions of the functional layer not masked by the hard mask layer, wherein the depositing of the functional layer, the depositing of the granular layer, removing the second material, and removing the portions of the functional layer are performed in a vacuum environment.

Abstract: Disclosed is an apparatus for optical emission spectroscopy which includes a light measuring unit measuring light in a process chamber performing a plasma process on a substrate, a light analyzing unit receiving light collected from the light measuring unit to analyze a plasma state, a control unit receiving an output signal of the light analyzing unit to process the output signal, and a light collecting controller disposed between the process chamber and the light measuring unit so as to be combined with the light measuring unit. The light collecting controller controls the light collected to the light measuring unit.

Abstract: This invention relates to the in-vacuum rotational device on a cylindrical magnetron sputtering source where the target or target elements of the target construction of such device are enabled to rotate without the need of a vacuum to atmosphere or vacuum to coolant dynamic seal. This invention relates to the use of the device in vacuum plasma technology where a plasma discharge, or any other appropriate source of energy such as arcs, laser, which can be applied to the target or in its vicinity would produce suitable coating deposition or plasma treatment on components of different nature. This invention also relates but not exclusively to the use of the device in sputtering, magnetron sputtering, arc, plasma polymerization, laser ablation and plasma etching. This invention also relates to the use of such devices and control during non-reactive and reactive processes, with or without feedback plasma process control.

Abstract: A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium is equal to or lower than 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In2O3 phase of a bixbyite structure has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 ?m.

Abstract: A film forming apparatus includes a processing chamber, a gas supply unit, a stage, at least one holder, a power supply, at least one magnet and a magnet rotation unit. The gas supply unit is configured to supply a gas into the processing chamber. The stage is provided in the processing chamber, and has a center coinciding with a central axis which extends in a vertical direction. The stage is configured to cool the object to about ?50° C. or below. Each holder is configured to hold a target, and extends in an annular shape above the stage inside the processing chamber. The power supply is configured to generate a voltage to be applied to the target. Each magnet is provided outside the processing chamber and faces the target. The magnet rotation unit is configured to rotate the magnet about the central axis.

Abstract: A radiation detection assembly that includes an ionization chamber having a cathode and an anode. The ionization chamber detects radiation that passes into the ionization chamber. The assembly includes an exterior enclosure defining a hollow internal volume within which the ionization chamber is enclosed. The exterior enclosure includes at least two layers. At least one of the layers provides an electromagnetic shield to the hollow internal volume and the ionization chamber enclosed therein.

Abstract: This mass spectrometric device is provided with a sample container (8) for placing a measurement sample (12) therein, a detector (9) analyzing the mass of a sample and detecting a drug, or the like, in the sample, a dielectric container (3) linked to the sample container for running a discharge current into air to provoke ionization, a valve (2) for sending air intermittently to the sample container, the dielectric container and the detector, a barrier discharge high-voltage power source (6) to be discharged by the dielectric container, a current detection unit (5) connected to the barrier discharge high-voltage power source for detecting a discharge current (28), a discharge-start timing detection unit (7) connected to the current detection unit for detecting the discharge-start timing based on the current detection result from the current detection unit to send a discharge-start timing signal (17), and a control unit (11) for controlling each constituent.

Abstract: A mass spectrometer or ion mobility spectrometer is disclosed comprising: an ion block for receiving ions; a heater for heating the ion block; a vacuum housing; and an interface block arranged between the ion block and the vacuum housing; wherein the interface block is formed from a polymer. The polymer interface block inhibits the heat transfer from the ion block to the vacuum housing and also electrically isolates the ion block and vacuum housing. The interface block further comprises at least one conduit through the body of the interface block. This enables gas to be transmitted through the interface block to the ion block, and also enables the interface block to be cooled.

Abstract: A sample plate for an ion source is disclosed comprising a plurality of ionization regions, each ionization region comprising a first electrode and a second separate electrode separated by an insulator.

Abstract: After a sample such as a biomedical tissue section is attached to an electrically-conductive slide glass (S1), the film layer of a matrix substance is appropriately formed by vapor deposition so as to cover the sample (S2). The crystal of the matrix substance in the film layer is very fine and uniform. Subsequently, the slide glass on which the matrix film layer is formed is placed in a vaporized solvent atmosphere, and the solvent infiltrates into the matrix film layer (S3). When the solvent sufficiently infiltrated is vaporized, a substance to be measured in the sample takes in the matrix and re-crystallized. Furthermore, the matrix film layer is formed again on the surface by the vapor deposition (S4). The added matrix film layer absorbs excessive energy of a laser beam during MALDI, which suppresses the denaturation of the substance to be measured and the like, so that high detection sensitivity can be achieved while high spatial resolution is maintained.

Abstract: The invention relates to a mass spectrometer having an electron impact ionization source which comprises an ejector for forming a beam of sample gas being driven in a first direction through an interaction region; a magnet assembly configured and arranged such that its magnetic field lines pass through the interaction region substantially parallel to the first direction; an electron emitter assembly for directing electrons toward the interaction region in a second direction being aligned substantially opposite to the first direction, wherein the electrons propagate along and are confined about the magnetic field lines until reaching the interaction region and forming sample gas ions therein; and a mass analyzer located downstream from the interaction region to which the sample gas ions are guided for mass analysis.

Abstract: A mass spectrometer (1) is provided with: an ionization chamber (10) for ionizing a sample (S) on its surface at an analysis point through irradiation by a laser beam; an analysis chamber (23) having a mass spectroscope (24) for detecting ions; a middle vacuum chamber (21, 22) arranged between the ionization chamber (10) and the analysis chamber (23); and an introduction pipe (12) or an introduction hole for allowing the inside of the housing (11) of the ionization chamber (10) to communicate with the inside of the middle vacuum chamber (21), wherein ions and fine particles, which have not been drawn into the introduction pipe (12) or introduction hole, can be prevented from spreading inside of the chamber.

Abstract: A Time of Flight mass analyzer is disclosed comprising an annular ion guide having a longitudinal axis and comprising a first annular ion guide section and a second annular ion guide section. Ions are introduced into the first annular ion guide section so that the ions form substantially stable circular orbits within the first annular ion guide section about the longitudinal axis. The ions are then orthogonally accelerated ions from the first annular ion guide section into the second annular ion guide section. An ion detector is disposed within the annular ion guide and has an ion detecting surface arranged in a plane which is substantially perpendicular to the longitudinal axis.

Abstract: A method of mass spectrometry is disclosed comprising separating ions according to one or more physico-chemical properties. Ions which are onwardly transmitted to a Time of Flight mass analyzer are controlled by attenuating ions which would otherwise be transmitted to the Time of Flight mass analyzer and cause saturation of an ion detector and which have been determined or which are predicted to have a relatively high intensity.

Abstract: A device for mass spectrometry in continuous operation can be equipped with a focused electron beam source or laser radiation source. It can further include a vacuum chamber, a stage for placing the specimen, and an ion beam column with a plasma source for producing a primary ion beam and a secondary ion mass spectrometer for secondary ion analysis. The ion beam column is connected to an inert gas source and to a reactive gas source and is modified for simultaneous introduction of at least two gases from the inert gas source and reactive gas source. The secondary ion mass spectrometer is of an orthogonal Time-of-Flight type to ensure the function with the ion beam column in continuous operation.

Abstract: A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

Abstract: Methods for removing particles from a wafer for photolithography. A method is provided including providing a semiconductor wafer; attaching a polyimide layer to a backside of the semiconductor wafer; and performing an etch on an active surface of the semiconductor wafer; wherein particles that impinge on the backside during the etch are captured by the polyimide layer. In another method, includes attaching a layer of polyimide film to a backside of a semiconductor wafer; dry etching a material on an active surface of the semiconductor wafer; depositing of an additional layer of material on the active surface of the semiconductor wafer; removing the layer of polyimide film from the backside of the semiconductor wafer; patterning the layer of material using an immersion photolithography process to expose a photoresist on the active surface of the wafer; and repeating the attaching, dry etching, depositing, removing and patterning steps.

Abstract: Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source:plasma-initiating gas:dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features.

Abstract: A method of manufacturing a silica layer includes: coating a pre-wetting liquid material including a carbon compound on a substrate; coating a composition for forming a silica layer on the substrate coated with the pre-wetting liquid material; and curing a substrate coated with the composition for forming a silica layer.

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

Abstract: Provided are methods of depositing tantalum-containing films via atomic layer deposition and/or chemical vapor deposition. The method comprises exposing a substrate surface to flows of a first precursor comprising TaClxR5-x, TaBrxR5-x or TaIxR5-x, wherein R is a non-halide ligand, and a second precursor comprising an aluminum-containing compound, wherein x has a value in the range of 1 to 4. The R group may be C1-C5 alkyl, and specifically methyl. The resulting films comprise tantalum, aluminum and/or carbon. Certain other methods relate to reacting Ta2Cl10 with a coordinating ligand to provide TaCl5 coordinated to the ligand. A substrate surface may be exposed to flows of a first precursor and second precursor, the first precursor comprising the TaCl5 coordinated to a ligand, the second precursor comprising an aluminum-containing compound.

Abstract: In one aspect of the invention, a method for fabricating an advanced metal conductor structure includes providing a conductive line pattern including a set of conductive line trenches in a dielectric layer. Each conductive line trench of the conductive line pattern having parallel vertical sidewalls and a horizontal bottom. A surface treatment of the dielectric layer is performed. The surface treatment produces an element enriched surface layer in which a concentration of a selected element in a surface portion of the parallel sidewalls and horizontal bottoms of the conductive line trenches is increased. A first metal layer is deposited on the element enriched surface layer. A first thermal anneal is performed which simultaneously reflows the first metal layer to fill a first portion of the conductive line trenches and causes a chemical change at interfaces of the first metal layer and the element enriched surface layer creating a liner which is an alloy of the first metal and selected element.

Abstract: Methods of selectively removing silicon oxide are described. Exposed portions of silicon oxide and spacer material may both be present on a patterned substrate. The silicon oxide may be a native oxide formed on silicon by exposure to atmosphere. The exposed portion of spacer material may have been etched back using reactive ion etching (RIE). A portion of the exposed spacer material may have residual damage from the reactive ion etching. A self-assembled monolayer (SAM) is selectively deposited over the damaged portion of spacer material but not on the exposed silicon oxide or undamaged portions of spacer material. A subsequent gas-phase etch may then be used to selectively remove silicon oxide but not the damaged portion of the spacer material because the SAM has been found to not only preferentially adsorb on the damaged spacer but also to halt the etch rate.

Abstract: A method for processing a semiconductor wafer in a single wafer processing chamber may include heating the single wafer processing chamber to a temperature in a range of 650-700° C., and forming at least one superlattice on the semiconductor wafer within the heated single wafer processing chamber by depositing silicon and oxygen to form a plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base silicon monolayers defining a base silicon portion and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions. Depositing the oxygen may include depositing the oxygen using an N2O gas flow.

Abstract: According to an embodiment of a method of fabricating III-Nitride semiconductor dies, the method includes: growing a III-Nitride body over a group IV substrate in a semiconductor wafer; forming at least one device layer over the III-Nitride body; etching grid array trenches in the III-Nitride body and in the group IV substrate; forming an edge trench around a perimeter of the semiconductor wafer, the grid array trenches terminating inside the group IV substrate; and forming separate dies by cutting the semiconductor wafer approximately along the grid array trenches.

Abstract: Implementations described herein generally relate to methods for relaxing strain in thin semiconductor films grown on another semiconductor substrate that has a different lattice constant. Strain relaxation typically involves forming a strain relaxed buffer layer on the semiconductor substrate for further growth of another semiconductor material on top. Whereas conventionally formed buffer layers are often thick, rough and/or defective, the strain relaxed buffer layers formed using the implementations described herein demonstrate improved surface morphology with minimal defects.