Abstract: An asymmetric high-k dielectric for reduced gate induced drain leakage in high-k MOSFETs and methods of manufacture are disclosed. The method includes performing an implant process on a high-k dielectric sidewall of a gate structure. The method further includes performing an oxygen annealing process to grow an oxide region on a drain side of the gate structure, while inhibiting oxide growth on a source side of the gate structure adjacent to a source region.

Abstract: A semiconductor device comprising a switch and a method of making the same. The device has a layout that includes one or more rectangular unit cells. Each unit cell includes a gate that divides the unit cell into four corner regions. Each unit cell also includes a source comprising first and second source regions located in respective opposite corner regions of the unit cell. Each unit cell further includes a drain comprising first and second drain regions located in respective opposite corner regions of the unit cell. Each unit cell also includes a plurality of connection members extending over the gate, source and drain for providing electrical connections to the gate, source and drain.

Abstract: Various embodiments disclose a method for fabricating one or more vertical fin field-effect-transistors. In one embodiment, a structure is formed. The structure comprises a substrate, a source/drain layer, and a plurality of fins formed on the first source/drain layer. The source/drain layer comprises a first semiconductor layer, a sacrificial layer, and a second semiconductor layer. A bottom spacer layer is formed in contact with the second semiconductor layer and the plurality of fins. A gate structure is then formed. A dielectric layer is deposited in contact with at least the gate structure, the bottom spacer layer, and the second semiconductor layer. At least a portion of the dielectric layer and a portion of the second semiconductor are removed. This removal forms a trench exposing a portion of the sacrificial layer. The sacrificial layer is then removed forming a cavity. A contact material is deposited within the trench and the cavity.

Abstract: The present invention provides a method of manufacturing nanowire semiconductor device. In the active region of the PMOS the first nanowire is formed with high hole mobility and in the active region of the NMOS the second nanowire is formed with high electron mobility to achieve the objective of improving the performance of nanowire semiconductor device.

Abstract: An integrated circuit with a thick TiN metal gate with a work function greater than 4.85 eV and with a thin TiN metal gate with a work function less than 4.25 eV. An integrated circuit with a replacement gate PMOS TiN metal gate transistor with a workfunction greater than 4.85 eV and with a replacement gate NMOS TiN metal gate transistor with a workfunction less than 4.25 eV. An integrated circuit with a gate first PMOS TiN metal gate transistor with a workfunction greater than 4.85 eV and with a gate first NMOS TiN metal gate transistor with a workfunction less than 4.25 eV.

Abstract: A semiconductor device includes a first fin and a second fin arranged on a substrate, a gate stack arranged over a channel region of the first fin, and spacers arranged along sidewalls of the gate stack. A cavity is arranged adjacent to a distal end of the gate stack. The cavity is defined by the substrate, a distal end of the second fin, and the spacers. A dielectric fill material is arranged in the cavity such that the dielectric fill material contacts the substrate, the distal end of the second fin, and the spacers.

Abstract: A CMOS integrated circuit containing an isolated n-channel DEMOS transistor and an isolated vertical PNP transistor has deep n-type wells and surrounding shallow n-type wells providing isolation from the p-type substrate. The isolated n-channel DEMOS transistor has an upper n-type layer providing an extended drain, and a lower p-type layer isolating the extended drain from the underlying deep n-type well. The isolated vertical PNP transistor has an upper n-type layer providing a base and a lower p-type layer providing a collector. A CMOS integrated circuit having opposite polarities of the transistors may be formed by appropriate reversals in dopant types.

Abstract: A method for making a three-dimensional integrated electronic circuit is provided, including making a first electrically conductive portion on a first dielectric layer covering a first semiconductor layer; then making a second dielectric layer covering the first electrically conductive portion such that it is disposed between the first and second dielectric layers, and a second semiconductor layer disposed on the second dielectric layer; then making a first electronic component in the second semiconductor layer, and a second electronic component in the first semiconductor layer; then making an electrical interconnection electrically linking the first and second electronic components together, of which a first part passes through the first dielectric layer and electrically connects the second electronic component to the first electrically conductive portion and of which a second part passes through a part of the second dielectric layer and electrically connects the first electronic component to the first elect

Abstract: Forming a set of semiconductor fins is disclosed. Forming the set of semiconductor fins can include forming a base structure including a silicon substrate, an insulator layer stacked on the silicon substrate, and a plurality of silicon semiconductor fins each stacked directly on the insulator layer. Forming the set of semiconductor fins can include depositing a first atomic layer of germanium atoms on a first set of semiconductor fins in the plurality of semiconductor fins and annealing the first atomic layer and the first set of semiconductor fins. Forming the set of semiconductor fins can include forming, from the annealing, a first set of silicon-germanium semiconductor fins.

Abstract: A first package includes a laminate layer, an overmold layer above and in direct contact with the laminate layer, and a logic circuit-through-silicon via (TSV) layer including a first logic die and TSVs. The logic circuit-TSV layer is within the overmold layer, and the TSVs are electrically exposed at a top surface of the overmold layer. The first package may be fabricated and tested by a first party prior to being provided to a second party. A second package includes a second logic die. The second party may attach the second package to the first package at the electrically exposed TSVs of the first package to realize a complete and functional semiconductor device.

Abstract: A system and method for forming a semiconductor device is provided. The system may measure characteristics of the substrate to determine an amount of induced stress on the substrate. The measured characteristics may include warpage, reflectivity and/or crack information about the substrate. The induced stress may be determined, at least in part, based on the measured characteristics. The system may compare the induced stress on the substrate to a maximum intrinsic strength of the substrate and adjust an anneal for the substrate based on the comparison. The adjustment may reduce or limit breakage of the substrate during the anneal. The system may control at least one of a peak anneal temperature and a maximum anneal duration for an anneal unit, which may perform an anneal on the substrate. The measurements and control may be performed ex-situ or in-situ with the anneal.

Abstract: A system, method and apparatus may comprise a wafer having a plurality of spiral test structures located on the kerf of the wafer. The spiral test structure may comprise a spiral connected at either end by a capacitor to allow the spiral test structure to resonate. The spiral structures may be located on a first metal layer or on multiple metal layers. The system may further incorporate a test apparatus having a frequency transmitter and a receiver. The test apparatus may be a sensing spiral which may be placed over the spiral test structures. A controller may provide a range of frequencies to the test apparatus and receiving the resonant frequencies from the test apparatus. The resonant frequencies will be seen as reductions in signal response at the test apparatus.

Abstract: A method for aligning a chip onto a substrate is disclosed. The method includes, depositing a ferrofluid, onto a substrate that has one or more pads that electrically couple to a semiconductor layer. The method can include a chip with solder balls electrically coupled to the logic elements of the chip, which can be placed onto the deposited ferrofluid, where the chip is supported on the ferrofluid, in a substantially coplanar orientation to the substrate. The method can include determining if the chip is misaligned from a desired location on the substrate. The method can include adjusting the current location of the chip in response to determining that the solder balls of the chip are misaligned from the desired location on the pads of the substrate, until the chip is aligned in the desired location.

Abstract: A method and system are provided for implementing resistive defect performance mitigation for integrated circuits. A test is generated for identifying resistive defects. A first self heating repair process is performed for repairing resistive defects. Testing is performed to identify a mitigated resistive defect and a functional integrated circuit. Responsive to identifying a resistive defect not being mitigated and a functional integrated circuit, a second repair process is performed, then testing is performed again.

Abstract: When VC inspection for a TEG is performed, it is easily detected whether any failure of a contact plug occurs or not by increasing an emission intensity of a contact plug, so that reliability of a semiconductor device is improved. An element structure of an SRAM is formed on an SOI substrate in a chip region. Also, in a TEG region, an element structure of an SRAM in which a contact plug is connected to a semiconductor substrate is formed on the semiconductor substrate exposed from an SOI layer and a BOX film as a TEG used for the VC inspection.

Abstract: An integrated circuit includes several metallization levels separated by an insulating region. A hollow housing whose walls comprise metallic portions is produced within various metallization levels. A controllable capacitive device includes a suspended metallic structure situated in the hollow housing within a first metallization level including a first element fixed on two fixing zones of the housing and at least one second element extending in cantilever fashion from the first element and includes a first electrode of the capacitive device. A second electrode includes a first fixed body situated at a second metallization level adjacent to the first metallization level facing the first electrode. The first element is controllable in flexion from a control zone of this first element so as to modify the distance between the two electrodes.

Abstract: A method of assembling a semi-hermetic semiconductor package includes bonding a semiconductor die having bond pads to a top side of a base region of a package substrate having vertical side walls that are hollow which define an inner open volume (gap) having an adhesive or thermoplastic material therein. There are a plurality of metal terminals providing top terminal contacts on the top side of the base region and bottom terminal contacts on a bottom side or below the base region. The bond pads are coupled to the top terminal contacts. A lid is placed which provides a top for the semiconductor package, where the lid extends to vertically oriented end protrusions so that the protrusions are positioned within the adhesive or thermoplastic material to secure the protrusions within the adhesive or thermoplastic material to provide a seal for the semiconductor package.

Abstract: A packaged transistor device (100) comprises a semiconductor chip (101) including a transistor with terminals distributed on the first and the opposite second chip side; and a slab (110) of low-grade silicon (l-g-Si) configured as a ridge (111) framing a depression including a recessed central area suitable to accommodate the chip, the ridge having a first surface in a first plane and the recessed central area having a second surface in a second plane spaced from the first plane by a depth (112) at least equal to the chip thickness, the ridge covered by device terminals (120; 121) connected to attachment pads in the central area having the terminals of the first chip side attached so that the terminals (103) of the opposite second chip side are co-planar with the device terminals on the slab ridge.

Abstract: A semiconductor device includes a semiconductor element and a ceramic circuit substrate on which the semiconductor element is mounted. The ceramic circuit substrate includes a ceramic substrate having one surface and the other surface facing each other, a metal circuit board joined to the one surface of the ceramic substrate and electrically connected to the semiconductor element, and a metal heat-dissipation plate joined to the other surface of the ceramic substrate. The metal circuit board is greater in thickness than the metal heat-dissipation plate. A surface of the metal heat-dissipation plate on a side opposite to the ceramic substrate is larger in area than a surface of the metal circuit board on a side opposite to the ceramic substrate. Thereby, a semiconductor device capable of suppressing warpage of the ceramic substrate can be achieved.

Abstract: A semiconductor device includes a standardized carrier. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. The semiconductor wafer is singulated through a first portion of the base semiconductor material to separate the semiconductor die. The semiconductor die are disposed over the standardized carrier. A size of the standardized carrier is independent from a size of the semiconductor die. An encapsulant is deposited over the standardized carrier and around the semiconductor die. An interconnect structure is formed over the semiconductor die while leaving the encapsulant devoid of the interconnect structure. The semiconductor device is singulated through the encapsulant. Encapsulant remains disposed on a side of the semiconductor die.

Abstract: An electronic module includes a circuit board, having a carrier layer, the carrier layer having a plurality of recess areas in a main surface thereof, and a plurality of electronic sub-modules, each one of the sub-modules being disposed in one of the recess areas and each one of the sub-modules having a carrier, a semiconductor chip disposed on the carrier, and an encapsulation material disposed on the carrier and on the semiconductor chip.

Abstract: A hermetically sealed electronic device and method of fabrication are provided. A base layer of a wafer is created using a substrate formed from ultra-thin glass or ceramic using panel or roll to roll processing. One or more layers are bonded to the base layer. The wafer is singulated into a plurality of electronic devices having a top surface and a plurality of sides. A hermetic sealant is applied to each electronic device to completely encase the top surface and the sides while bonding to the base layer. At least one of the layers is a metallization layer formed by metal deposition. Full metallization may be applied over the entire wafer and a pattern subsequently transferred to the full metallization by one of laser and chemical etching. The electronic device may further include at least one electronic component attached to one of the layers and encased by the hermetic sealant.

Abstract: A semiconductor device (1,21) includes a solid state device (2,22), a semiconductor chip (3) that has a functional surface (3a) on which a functional element (4) is formed and that is bonded on a surface of the solid state device with the functional surface thereof facing the surface of the solid state device and while maintaining a predetermined distance between the functional surface thereof and the surface of the solid state device, an insulating film (6) that is provided on the surface (2a, 22a) of the solid state device facing the semiconductor chip and that has an opening (6a) greater in size than the semiconductor chip when the surface of the solid state device facing the semiconductor chip is vertically viewed down in plane, and a sealing layer (7) that seals a space between the solid state device and the semiconductor chip.

Abstract: A method for manufacturing a semiconductor device is provided, the method including: mounting a first element on a wiring substrate, placing a first heat sink on the first element with a metal material interposed between the first heat sink and the first element, attaching the first heat sink to the first element via the metal material by heating and melting the metal material, and mounting a second element on the wiring substrate after the steps of attaching the first heat sink to the first element.

Abstract: Various technologies presented herein relate to forming one or more heat dissipating structures (e.g., heat spreaders and/or heat sinks) on a substrate, wherein the substrate forms part of an electronic component. The heat dissipating structures are formed from graphene, with advantage being taken of the high thermal conductivity of graphene. The graphene (e.g., in flake form) is attached to a diazonium molecule, and further, the diazonium molecule is utilized to attach the graphene to material forming the substrate. A surface of the substrate is treated to comprise oxide-containing regions and also oxide-free regions having underlying silicon exposed. The diazonium molecule attaches to the oxide-free regions, wherein the diazonium molecule bonds (e.g., covalently) to the exposed silicon. Attachment of the diazonium plus graphene molecule is optionally repeated to enable formation of a heat dissipating structure of a required height.

Abstract: A three dimensional integrated circuit (3DIC) includes a first substrate and a heat spreading structure embedded in the first substrate. The 3DIC further includes a die electrically connected to the first substrate, wherein the die is thermally connected to the heat spreading structure. The 3DIC further includes a plurality of memory units on the die, wherein the die is between the plurality of memory units and the first substrate, and the plurality of memory units is thermally connected to the heat spreading structure by the die. The 3DIC further includes an external cooling unit on the plurality of memory units, wherein the plurality of memory units is between the die and the external cooling unit, and the die is thermally connected to the external cooling unit by the plurality of memory units.

Abstract: The heat sink structure includes a vapor chamber, a heat pipe, and capillary elements. The vapor chamber includes a housing, a first capillary structure covering inside the housing, and a first working fluid filled inside the housing. The housing includes through holes and an inner top wall. Both ends of the heat pipe are inserted through the two through holes respectively and are exposed from the housing. The heat pipe includes a pipe body, a second capillary structure covering inside the pipe body, and a second working fluid filled inside the pipe body. Each of the capillary elements is connected to the inner top wall. One end of each of the capillary elements is in contact with the first capillary structure, and the other end of each of the capillary elements is in thermal contact with the heat pipe.

Abstract: A cooling structure for large electronic boards with closely-spaced heterogeneous die and packages is disclosed. The assembly includes a frame having a plurality of openings. The assembly further includes a cold plate mounted to the frame. The cold plate includes at least one inlet and at least one outlet and fluid channels in communication with the at least one inlet and the at least one outlet. The assembly further includes a heat sink mounted within each of the plurality of openings which in combination with sidewalls of the openings of the frame and the cold plate form individual compartments each of which are in fluid communication with the fluid channels.

Abstract: Methods, apparatuses and systems associated with a heat exchanger for cooling an IC package are disclosed herein. In embodiments, a heat exchanger may include a base plate having a bottom side to be thermally coupled to the IC package, and a fin side, wherein the fin side is to include a plurality of fins to dissipate thermal energy emanated from the IC package. The heat exchanger may further include a manifold structure disposed on top of the base plate, having one or more layers, to regulate a coolant fluid flow to cool the plurality of fins, wherein the one or more layers are to include a plurality of channels and ports complementarily organized to distribute the coolant fluid flow to the plurality of fins tailored to a thermal energy emanation pattern of the integrated circuit package. Other embodiments may be described and/or claimed.

Abstract: A package includes a substrate having an electronic component flip chip mounted thereto by flip chip bumps. The electronic component includes an active surface and an inactive surface. Electrically conductive columns (TSV) extend through the electronic component between the active surface and the inactive surface. A RDL structure is coupled to the inactive surface, the RDL structure redistributing the pattern of the electrically conductive columns at the inactive surface to a pattern of inactive surface RDL lands. The inactive surface RDL lands are exposed through via apertures of a package body. By using the inactive surface of the electronic component to distribute the inactive surface RDL lands, the allowable size of the electronic component is maximized.

Abstract: A semiconductor device with a through via penetrating a semiconductor substrate, in which shorting between a wiring and a semiconductor element is prevented to improve the reliability of the semiconductor device. A liner insulating film as a low-k film, which has a function to insulate the semiconductor substrate and a through-silicon via from each other and is thick enough to reduce capacitance between the semiconductor substrate and the through-silicon via, is used as an interlayer insulating film for a first wiring layer over a contact layer. This prevents a decrease in the thickness of an interlayer insulating film in the contact layer.

Abstract: Pre-encapsulated lead frames suitable for use in microelectronic device packages are disclosed. Individual lead frames can include a set of multiple lead fingers arranged side by side with neighboring lead fingers spaced apart from each other by a corresponding gap. An encapsulating compound at least partially encapsulates the set of lead fingers without encapsulating a microelectronic device. The encapsulating compound can generally fill the plurality of gaps between two adjacent lead fingers.

Abstract: A power module includes: an insulating layer; a leadframe disposed on the insulating layer; a semiconductor chip disposed on the leadframe; and a mold resin formed so as to cover the semiconductor chip and at least a part of the metal layer, wherein a groove into which a part of the insulating layer is inserted is formed on a surface of the leadframe facing the insulating layer. Accordingly, there can be provided the power module with improved reliability so that the insulating layer and the leadframe may be hardly deviated from each other even if external force is applied thereon; and a fabrication method for such a power module.

Abstract: A semiconductor device includes a first electronic component mounted to an upper face of a plated interconnect layer, a second electronic component mounted to a lower face of the plated interconnect layer, a first resin part covering the first electronic component on an upper side of the plated interconnect layer, and a second resin part covering the second electronic component on a lower side of the plated interconnect layer, wherein the first and second electronic components at least partially face each other across the plated interconnect layer, wherein the plated interconnect layer includes a sloping portion disposed on a sloping boundary between the first and second resin parts, and wherein an end part of the sloping portion is bent to have a face thereof exposed from the second resin part, and a lower surface of the second resin part is flush with the face of the end part.

Abstract: A packaged electronic device has first and second lead frame leads and a passive electronic component mounted, across a gap between the leads, on the top sides of the leads, using an adhesive. Facing lateral sides of the leads each include a recess that receives the adhesive. The recess promotes adhesion between the electronic component and the corresponding lead while limiting spread of the adhesive on the bottom side of the electronic component. The adhesive in the recesses promotes adhesion of the component to the leads by inhibiting cracking, and enhances inspection capability at the device backside.

Abstract: An apparatus including a die including a device side; and a build-up carrier including a body including a plurality of alternating layers of conductive material and dielectric material disposed on the device side of the die, an ultimate conductive layer patterned into a plurality of pads or lands; and a grid array including a plurality of conductive posts disposed on respective ones of the plurality of pads of the ultimate conductive layer of the body, at least one of the posts coupled to at least one of the contact points of the die through at least a portion of the conductive material of the body. A method including forming a body of a build-up carrier including a die, the body of the build-up carrier including an ultimate conductive layer and forming a grid array including a plurality of conductive posts on the ultimate conductive layer of the body.

Abstract: A device with pillar-shaped components, includes a substrate; a wiring layer disposed on the substrate; and pillar-shaped components disposed on any of the substrate and the wiring layer, each of the pillar-shaped components having a bottom part connected to the substrate and/or the wiring layer, a top part opposed to the bottom part, and a lateral face part extending from the bottom part and connected to the top part; wherein each of the pillar-shaped components includes a first pillar-shaped part formed by plating, a second pillar-shaped part formed on the first pillar-shaped part by plating, and a ring-like projection part formed on the lateral face part to project outward and extend in a circumferential direction, and to be in a position higher than a joint position between the first pillar-shaped part and the second pillar-shaped part.

Abstract: Integrated circuit (IC) package structures, and related devices and methods, are disclosed herein. In some embodiments, an IC package substrate may include: a dielectric layer having a first face and a second face; a metal layer disposed at the first face of the dielectric layer and having a first face and a second face, wherein the second face of the metal layer is disposed between the first face of the metal layer and the second face of the dielectric layer; a package contact at the first face of the metal layer to couple the IC package substrate to a component; and a die contact at the first face of the metal layer to couple a die to the IC package substrate.

Abstract: A method of forming a semiconductor device assembly includes forming an interposer having an opening extending from a first major surface to a second major surface of the interposer and a plurality of external connectors on the second major surface. The method further includes attaching the first major surface of the interposer to a packaged semiconductor device, wherein the opening of the interposer exposes the packaged semiconductor device.

Abstract: A package structure including a capacitor mounted within a cavity in the package substrate is disclosed. The package structure may additionally include a die mounted to a die side surface of the package substrate, and the opposing land side surface of the package substrate may be mounted to a printed circuit board (PCB). The capacitor may be mounted within a cavity formed in the die side surface of the package substrate or the land side surface of the package substrate. Mounting a capacitor within a cavity may reduce the form factor of the package. The die may be mounted within a cavity formed in the die side surface of the package substrate. Solder balls connecting the package to the PCB may be mounted within one or more cavities formed in one or both of the package substrate and the PCB.

Abstract: Integrated circuits and manufacturing methods of the same are disclosed. The integrated circuit includes a transistor, a first dielectric layer, an etch stop layer, a first via and a first conductive layer. The first dielectric layer is disposed between the transistor and the etch stop layer. The first via is disposed in the first dielectric layer and the etch stop layer, and electrically connected to the transistor. The first conductive layer is in contact with the first via, wherein the first via is disposed between the first conductive layer and the transistor, and the etch stop layer is aside a portion of the first via adjacent to the first conductive layer.

Abstract: An inductor device includes a first insulating layer having a first via hole, a first metal layer formed on an upper surface of the first insulating layer and having a droop portion at an upper end-side of the first via hole, a second metal layer formed on a lower surface of the first insulating layer and having a first connection part exposed to a bottom surface of the first via hole, and a first metal-plated layer formed in the first via hole and configured to connect the first connection part and the droop portion of the first metal layer.

Abstract: Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.

Abstract: An embodiment includes a semiconductor apparatus comprising: a redistribution layer (RDL) including a patterned RDL line having two RDL sidewalls, the RDL comprising a material selected from the group comprising Cu and Au; protective sidewalls directly contacting the two RDL sidewalls; a seed layer including the material; and a barrier layer; wherein (a) the RDL line has a RDL line width orthogonal to and extending between the two RDL sidewalls, and (b) the seed and barrier layers each include a width parallel to and wider than the RDL line width. Other embodiments are described herein.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate, forming a trench in the dielectric layer, forming a first barrier layer in the trench. The first barrier layer has a first portion disposed along sidewalls of the trench and a second portion disposed over a bottom of the trench. The method also includes applying an anisotropic plasma treatment to convert the second portion of the first barrier layer into a second barrier layer, removing the second barrier layer while the first portion of the first barrier layer is disposed along sidewalls of the trench. The method also includes forming a conductive feature in the trench.

Abstract: A modified trench metal-semiconductor alloy formation method involves depositing a layer of a printable dielectric or a sacrificial carbon material within a trench structure and over contact regions of a semiconductor device, and then selectively removing the printable dielectric or sacrificial carbon material to segment the trench and form plural contact vias. A metallization layer is formed within the contact vias and over the contact regions.

Abstract: Integrated circuit (IC) structure embodiments and methods of forming them with middle of the line (MOL) contacts that incorporate a protective cap, which provides protection from damage during back end of the line (BEOL) processing. Each MOL contact has a main body in a lower portion of a contact opening. The main body has a liner (e.g., a titanium nitride layer) that lines the lower portion and a metal layer on the liner. The MOL contact also has a protective cap in an upper portion of the contact opening above the first metal layer and extending laterally over the liner to the sidewalls of the contact opening. The protective cap has an optional liner, which is different from the liner in the lower portion, and a metal layer, which is either the same or different than the metal in the main body.

Abstract: A system-on-chip includes a substrate, a plurality of unit cells on the substrate, a first power mesh, and a second power mesh. The first power mesh includes a power rail that is connected to power terminals of the plurality of unit cells and is provided in a first metallization layer. The first power mesh also includes a power strap in a second metallization layer. The second power mesh is provided in a third metallization layer and a fourth metallization layer.

Abstract: An integrated circuit device includes a first metal layer including aluminum. The integrated circuit device includes a second metal layer including an interconnect structure. The interconnect structure includes a layer of first material including aluminum. The integrated circuit device includes an inter-diffusion layer that includes aluminum. The inter-diffusion layer is proximate to the first metal layer and proximate to the layer of first material including aluminum. The integrated circuit device includes an aluminum oxide barrier layer. The aluminum oxide barrier layer is proximate to a dielectric layer and proximate to the layer of first material including aluminum.

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a semiconductor substrate, forming a porous low-k dielectric layer on the semiconductor substrate, forming a through-hole and a trench of a copper interconnect structure, performing a helium plasma treatment on an exposed surface of the porous low-k dielectric layer, performing a nitrogen plasma treatment on the exposed surface of the porous low-k dielectric layer to form a silicon nitride layer, performing an argon plasma treatment on the silicon nitride layer, and forming a diffusion barrier layer on bottoms and sidewalls of the through-hole and the trench of the copper interconnect structure. Through the successive helium, nitrogen and argon plasma treatments, the low-k dielectric layer has a smooth and dense surface that increases the adhesion strength between the low-k dielectric layer and the diffusion barrier layer to improve reliability and yield of the semiconductor device.