Abstract: A QD glass cell includes a glass cell and QD fluorescent powder material. The glass cell includes a receiving chamber, and the QD fluorescent powder being encapsulated within the receiving chamber. A manufacturing method of the QD glass cell includes: S101: manufacturing a glass cell comprising a receiving chamber, and the glass cell comprising an injection port transmitting fluid into the receiving chamber; S102: manufacturing fluid QD fluorescent powder material; S103: filling the fluid QD fluorescent powder material into the receiving chamber via the injection port; S104: applying a curing process to the fluid QD fluorescent powder material within the receiving chamber; and S105: sealing the injection port by hot melting to obtain the QD glass cell. In addition, the above QD glass cell may be applied to LED light source.

Abstract: This disclosure provides a lighting device which comprises a support structure comprising a locking mechanism, a light source arranged in contact with the support structure, a wavelength converter configured to convert light from a first wavelength range to a second wavelength range, the wavelength converter having a light entrance surface configured to receive light and a light exit surface configured to emit light. The wavelength converter is releasably connected to the support structure in a locked position via said locking mechanism, and the light entrance surface is arranged in optical contact with the light source.

Abstract: A light-emitting device includes a substrate; a light-emitting element mounted on the substrate; a first light-transmissive member bonded to an upper surface of the light-emitting element via an adhesive; and a second light-transmissive member placed on an upper surface of the first light-transmissive member. In a plan view of the light-emitting device, a peripheral edge of a lower surface of the first light-transmissive member is positioned more inward than a peripheral edge of the upper surface of the light-emitting element. The adhesive extends from the upper surface of the light-emitting element to a lower surface of the second light-transmissive member, the adhesive covers a side surface of the first light-transmissive member, and the adhesive is separated from the substrate.

Abstract: A method of manufacturing a down-conversion substrate for use in a light system includes forming a first crystallography layer including one or more phosphor materials and, optionally, applying at least one activator to the crystallography layer, heating the crystallography layer at high temperature to promote crystal growth in the crystallography layer, and drawing out the crystallography layer and allowing the crystallography layer to cool to form the down-conversion substrate. A light system includes an excitation source for emitting short wavelength primary emissions; and a down-conversion substrate disposed in the path of at least some of the primary emissions from the excitation source to convert at least a portion of the primary emissions into longer-wavelength secondary emissions, wherein the substrate includes one or more crystallography layers, wherein each crystallography layer includes one or more phosphor materials, and optionally at least one activator.

Abstract: Provided is a LED light source package comprising a circuit board, a light source seated on an upper portion of the circuit board, and a lens structure arranged on the upper portion of the circuit board via the light source. A surface that faces the light source in the lens structure includes a first inclined surface that projects toward the light source as going to a center portion of the lens structure.

Abstract: A light-emitting device includes a light-emitting element; a first light transmissive member that is disposed over the light-emitting element and that includes a first upper surface, a lower surface, a first lateral surface; and a second lateral surface positioned outside the first lateral surface, a second light transmissive member that covers at least a part of the first lateral surface; and a light reflective member that is disposed on a lateral surface of the second light transmissive member, the second lateral surface of the first light transmissive member, and a lateral surface of the light-emitting element.

Abstract: An LED module according to the present invention includes an LED unit 2 and a case 1, where the LED unit includes an LED chip 21, and the case 1 includes a main body 11 made of a ceramic material and a pad 12a on which the LED unit 2 is mounted. The outer edge 121a of the pad 12a is positioned inward of the outer edge 2a of the LED unit 2 as viewed in plan. These arrangements prevent the light emission amount of the LED module A1 from reducing with time.

Abstract: A multiple element emitter package is disclosed for increasing color fidelity and heat dissipation, improving current control, and increasing rigidity of the package assembly. In one embodiment, the package comprises a casing with a cavity extending into the interior of the casing from a first main surface. A lead frame is at least partially encased by the casing, the lead frame comprising a plurality of electrically conductive parts carrying a linear array of LEDs. Electrically conductive parts, separate from the parts carrying the LEDs, have a connection pad, wherein the LEDs are electrically coupled to the connection pad, such as by a wire bond. This arrangement allows for a respective electrical signal to be applied to each of the LEDs. The emitter package may be substantially waterproof, and an array of the emitter packages may be used in an LED display such as an indoor and/or outdoor LED screen.

Abstract: An optoelectronic component includes a substrate, a connecting element applied on the substrate and a layer sequence that emits electromagnetic radiation. The layer sequence is applied on the connecting element. The connecting element includes at least one connecting material that has an oriented molecular configuration. The connecting element has at least one parameter that is anisotropic.

Abstract: A light emitting device includes a substrate, a plurality of first wiring members, a plurality of second wiring members and a plurality of light emitting elements. The first wiring members extend in a first direction. The second wiring members extend in a second direction. Each of the second wiring members is segmented into a plurality of second wiring portions. The light emitting elements are disposed along the second direction. A first electrode of the light emitting element is connected to a corresponding one of the first wiring members. A second electrode of the light emitting element has a first connection part and a second connection part that is linked to the first connection part. The first connection part and the second connection part are connected to a corresponding one of the second wiring members and bridge at least two of the segmented second wiring portions in the second direction.

Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.

Abstract: A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.

Abstract: A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.

Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 ??·cm2.

Abstract: A thermoelectric pixel includes a micro-platform and a device layer having one or more support layers suspended at a perimeter thereof. The pixel includes structures which reduce thermal conductivity and improve platform planarity. In embodiments providing an infrared sensor, carbon nanotubes are used to enhance infrared absorption into the sensor pixel. In other embodiments, the pixel provides a thermoelectric energy harvester.

Abstract: A tunnel-effect power converter including first and second electrodes having opposite surfaces, wherein the first electrode includes protrusions extending towards the second electrode.

Abstract: A piezoelectric vibration piece has an inverted mesa-type structure, comprising a thinned portion serving as a vibration region at a central part of a piezoelectric plate; and a thickened portion formed all along or partly along perimeter of the thinned portion to reinforce the thinned portion. In the piezoelectric vibration piece, contact metals including a large number of discrete metallic thin films are provided on the whole surfaces of the piezoelectric plate. A piezoelectric vibration device comprises the piezoelectric vibration piece which is housed in a package, wherein extraction electrodes of the piezoelectric vibration piece are connected to internal terminals of the package through a conductive adhesive. These structural and technical advantages prevent undesirable flowage of the conductive adhesive before thermal curing. As a result, the piezoelectric vibration piece and the piezoelectric vibration device comprising the same successfully attain excellent vibration characteristics.

Abstract: There is provided a vibration generating apparatus including: an elastic member having both end portions fixed to a housing; a piezoelectric element installed on one surface of the elastic member; and a circuit board connected to the piezoelectric element, wherein the elastic member has support parts formed on both side surfaces of both end portions thereof and bent downwardly in order to be installed in the housing, and a portion of the circuit board passing between the support parts has a flat panel shape.

Abstract: A thin-film piezoelectric material element includes a laminated structure part having a lower electrode film, a piezoelectric material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric material film. The thin-film piezoelectric material element includes a surface layer insulating film disposed on side surfaces of the laminated structure part, a first top surface of the upper electrode film and a second top surface of the lower electrode film, and has a first through hole formed on a first top disposed part and a second through hole formed on a second top disposed part. Further, the surface layer insulating film has an upper electrode pad being in directly contact with a first inside exposed surface and a lower electrode pad being in directly contact with a second inside exposed surface.

Abstract: There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content ? of Li on a metal basis is not less than 0.0013 parts by weight and is not greater than 0.0280 parts by weight, and content ? of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight (Ba1-xCax)a(Ti1-y-zZrySnz)O3??(1) (in the formula (1), 0.09?x?0.30, 0.074<y?0.085, 0?z?0.02, and 0.986?a?1.02).

Abstract: The present invention provides a lead-free piezoelectric material having a high piezoelectric constant and a high mechanical quality factor in a wide operating temperature range. The piezoelectric material includes a perovskite-type metal oxide represented by Formula (1): (Ba1-xCax)a(Ti1-yZry)O3 (1.00?a?1.01, 0.125?x<0.155, and 0.041?y?0.074) as a main component. The metal oxide contains Mn in a content of 0.12 parts by weight or more and 0.40 parts by weight or less based on 100 parts by weight of the metal oxide on a metal basis.

Abstract: This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes an interlayer dielectric layer formed over a substrate and having a hole; a conductive pattern filled in the hole and having a top surface located at a level substantially same as a top surface of the interlayer dielectric layer; and an MTJ (Magnetic Tunnel Junction) structure formed over the conductive pattern to be coupled to the conductive pattern and including a free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein an upper portion of the conductive pattern includes a first amorphous region.

Abstract: According to one embodiment, a memory device includes a stacked body and a controller. The stacked body includes a first magnetic layer, a second magnetic layer stacked with the first magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second ferromagnetic layer. The second ferromagnetic layer includes a first portion and a second portion stacked with the first portion. The controller causes a current to flow in the stacked body in a programming period. The programming period includes a first and a second period. The current has a first value in the first period and a second value in the second period. The second value is less than the first value.

Abstract: By manufacturing magnetoresistive devices using low-k dielectric materials as the inter-layer dielectrics and higher-k dielectric materials for hard masks and encapsulation, the overall dielectric constant characteristics of the magnetoresistive devices can be kept lower, thereby decreasing capacitance and allowing for higher speed operations. Elimination or reduction of residual higher-k dielectric material through stripping or other processes minimizes “islands” of higher-k dielectric material that can detract from overall dielectric constant performance. One or more masking and one or more etching steps can be used to form the devices either with or without the additional stripping of the higher-k material.

Abstract: The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.

Abstract: Methods for manufacturing magnetoresistive devices are presented in which isolation of magnetic layers in the magnetoresistive stack is achieved by oxidizing exposed sidewalls of the magnetic layers prior to subsequent etching steps. Etching the magnetic layers using a non-reactive gas further prevents degradation of the sidewalls.

Abstract: A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material; a solid electrolyte including a region made of an oxide of a first metal element, referred to as first metal oxide doped by a second element, distinct from the first metal and able to form a second oxide, the second element being selected such that the band gap energy of the second oxide is strictly greater than the band gap energy of the first metal oxide, the atomic percentage of the second element within the region of the solid electrolyte being comprised between 5% and 20%.

Abstract: Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an are enclosed by the oxide material formed in the opening.

Abstract: A resistive switching memory comprising a first electrode and a second electrode; an active resistive switching region between the first electrode and the second electrode, the resistive switching region comprising a transition metal oxide and a dopant comprising a ligand, the dopant having a first concentration; a first buffer region between the first electrode and the resistive switching material, the first buffer region comprising the transition metal oxide and the dopant, wherein the dopant has a second concentration that is greater than the first concentration. In one embodiment, the second concentration is twice the first concentration. In one embodiment, the first buffer region is thicker than the active resistive switching region.

Abstract: An all-spray fabrication method for large scale inverted organic solar array is provided. Zinc oxide sol gel solutions and revised layers shorten the fabrication process from 2 days to 5 hours and concurrently improve transparency and visual effect of solar windows, and improve power conversion efficiency over 2× compared to previous devices, due to enhanced device characteristics like increased shunt resistance and fill factor. The method also eliminates human factors such as manual erasing of active layer to make series connections by providing a complete solution processable manufacturing process. The semi-transparency of the solar module allows for applications on windows and windshields. The inventive modules are more efficient than silicon solar cells in artificial light environments, significantly expanding their use in indoor applications.

Abstract: Provided are a laminate including an organic material mask and a method for preparing an organic light emitting device using the same. The laminate includes a substrate; and a mask provided on the substrate and including an organic material.

Abstract: A heterocyclic compound represented by Formula 1 below, and an organic light-emitting device including the heterocyclic compound:

Abstract: Display comprising at least one organic light emitting diode, wherein the at least one organic light emitting diode comprises an anode, a cathode, a light emitting layer between the anode and the cathode, and at least one layer comprising a compound according to formula (I) between the cathode and the light emitting layer: wherein A1 and A2 are independently selected from halogen, CN, substituted or unsubstituted C1-C20-alkyl or heteroalkyl, C6-C20-aryl or C5-C20-heteroaryl, C1-C20-alkoxy or C6-C20-aryloxy, A3 is selected from substituted or unsubstituted C6-C40-aryl or C5-C40-heteroaryl, m=0, 1 or 2, n=0, 1 or 2.

Abstract: A thiadiazole contains a basic skeleton represented by any of formulae (1), (2), and (3) in the molecule.

Abstract: A heterocyclic compound and an organic light-emitting device including the heterocyclic compound, the heterocyclic compound being represented by Formula 1 below:

Abstract: A compound for an organic optoelectronic device, an organic light emitting diode including the compound, and a display device including the organic light emitting diode are provided and the compound in which moieties represented by Chemical Formulae I and II that are sequentially linked is provided and thus, the organic light emitting diode has excellent life-span characteristics due to excellent electrochemical and thermal stability and high luminous efficiency at a low driving voltage.

Abstract: A compound, an organic light-emitting device including a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, and including and emission layer, where the organic layer includes at least one compound represented by Formula 1, and a display apparatus, the compound being represented by Formula 1 below:

Abstract: The present invention provides a novel compound that is capable of largely improving a life time, efficiency, electrochemical stability, and thermal stability of an organic electronic device, and an organic electronic device that comprises an organic material layer comprising the compound.

Abstract: Provided are an organic EL device practically satisfactory in terms of its light-emitting characteristics, driving voltage, and durability, and a compound for an organic EL device to be used in the device. The organic EL device has a structure in which an anode, a plurality of organic layers including a light-emitting layer, and a cathode are laminated on a substrate, and the organic EL device contains, in at least one organic layer selected from the light-emitting layer, a hole-transporting layer, an electron-transporting layer, a hole-blocking layer, and an electron-blocking layer, an adamantane compound having at least one triarylborane structure in a molecule thereof as the compound for an organic EL device.

Abstract: The present invention relates to the use of a square planar transition metal complex as dopant, charge injection layer, electrode material or storage material.

Abstract: An organic light-emitting device including a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer includes at least one organometallic compound represented by Formula 1, below, and at least one condensed cyclic compound represented by Formula 40, below:

Abstract: A metal complex having a structural formula as follows, wherein, the metal atom M is selected from the group consisting of iridium (Ir), platinum (Pt), osmium (Os), rhenium (Re), ruthenium (Ru) and copper (Cu); R1, R2, R3 and R4 are independently selected from the group consisting of —F, —CF3, —CH3 and substituted phenyl; in the (C^N) substructure located on a left side of the metal atom M in the structural formula (I), C is located in a first aromatic or heteroaromatic ring, and N is located in a second heteroaromatic ring. The metal complex can be used in luminescent material of display devices.

Abstract: Compounds comprising phosphorescent metal complexes comprising cyclometallated imidazo[1,2-f]phenanthridine and diimidazo[1,2-a:1?,2?-c]quinazoline ligands, or isoelectronic or benzannulated analogs thereof, are described. Organic light emitting diode devices comprising these compounds are also described.

Abstract: A display device is disclosed. In one aspect, the display device includes a flexible substrate capable of being bent in a first direction and an insulating layer including a first opening pattern positioned on the flexible substrate and extending in a second direction crossing the first direction.

Abstract: Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

Abstract: Disclosed is a method for manufacturing an inverted organic electronic device. The method includes preparing a substrate having a first electrode; depositing a mixture of a cathode interface material and a photo active material onto the first electrode to form a bilayer or composite layer of a cathode interface layer and a photo active layer, followed by forming an anode interface layer on the bilayer or composite layer; and forming a second electrode on the anode interface layer. According to the present invention, it is possible to achieve simplification of a manufacturing process of an inverted organic electronic device and to provide an inverted organic electronic device having excellent performance by forming a cathode interface layer in the form of a uniform and pinhole-free thin film.

Abstract: A light-emitting device having a first light-emitting layer with a first quantum dot having a first core part and a first shell part. The first shell part has a surface coated with a surfactant, and the first shell part has a thickness of 3 to 5 ML based on the constituent molecule of the first shell part. The light-emitting device also can have second light-emitting layer with a second quantum dot having a second core part and a second shell part. The second shell part has a surface coated with two types of hole-transporting and electron-transporting surfactants, and the second shell part has a thickness of less than 3 ML based on the constituent molecule of the second shell part.

Abstract: An organic light emitting display device comprises first and second electrodes facing each other on a substrate; and three emission portions arranged between the first electrode and the second electrode, wherein at least one among the three emission portions includes two emitting layers, and the first, second and third emission portions being collectively configured as a TOL-FESE (Thickness of Organic Layers between the First Electrode and the Second Electrode) structure in which thicknesses of organic layers between the first electrode and the second electrode are different from one another, each organic layer having a specified thickness that provides the organic light emitting display device having the TOL-FESE structure with improved red efficiency or blue efficiency and minimized color shift rate with respect to a viewing angle, when compared to an organic light emitting display device that lacks the TOL-FESE structure.

Abstract: The present disclosure relates to an emissive construct, which can be used in various OLED applications, for example, top-emission white organic light-emitting diodes. The emissive construct includes a fluorescent emissive layer, a partial hole-blocking layer, and a phosphorescent emissive. A recombination zone is shared between the fluorescent emissive layer and the phosphorescent emissive layer, such that the thickness of the partial hole-blocking layer is less than about one-third of the thickness of the recombination zone.

Abstract: Provided are an organic electroluminescence device capable of enhancing reflectance of an anode, thereby resulting in improved light-emitting efficiency and a method of manufacturing the same. An anode (12), a thin film layer for hole injection (13), an insulating layer (14), an organic layer (15) including a luminescent layer (15C) and a cathode (16) including a semi-transparent electrode (16A) are laminated in order on a substrate (11). The anode (12) comprises silver which is a metal with high reflectance or an alloy including silver, and the thin film layer for hole injection (13) comprises chromium oxide or the like. Light generated in the luminescent layer (15C) is multiply reflected between the anode (12) and the semi-transparent electrode (16A) to be emitted from the cathode (16). As the reflectance of the anode (12) is enhanced, the light generated in the luminescent layer (15C) can be efficiently emitted.