Abstract: A method for fabricating a light emitting device, comprising: forming a plurality of light emitting stacked layers above a substrate; forming and patterning a current blocking (CB) layer on the light emitting stacked layers; forming a transparent conductive layer covering the light emitting stacked layers and the current blocking layer; etching the transparent conductive layer and exposing a reserved region for a first pad electrode and a mesa structure, respectively; and etching an exposed portion of the light emitting stacked layers and a portion of the current blocking layer to form a remaining current blocking layer, the mesa structure and a first opening.

Abstract: The semiconductor device includes: an AlGaN layer; a contact electrode; an insulating film; and a passivation film. The semiconductor device further includes: an extended wire extending over the contact electrode and the insulating film; and a pad electrode electrically connected to the extended wire. The passivation film covers the insulating film and the extended wire and including an opening for exposing the pad electrode. The insulating film accommodates the opening in a plan view. The passivation film accommodates the contact electrode in a plan view. The semiconductor device further includes a heat dissipation layer on a surface of the passivation film.

Abstract: At least some embodiments of the present disclosure relate to a lid for covering an optical device. The lid includes a metal member and a transparent encapsulant. The metal member includes a top surface, a first bottom surface, and a second bottom surface between the top surface and the first bottom surface. The transparent encapsulant is surrounded by the metal member and covers at least a portion of the second bottom surface.

Abstract: A light emitting device is provided. The light emitting device includes a light emitting element, which emits blue light, and a light transmissive member having a first principal face bonded to the light emitting element and a second principal face opposite the first principal face. The light transmissive member has a light transmissive base material and wavelength conversion substances, which are contained in the base material and which absorb the light from the light emitting element and emit light. The wavelength conversion substances are localized in the base material towards the first principal face, and include a first phosphor which emits green to yellow light and a second phosphor which emits red light. The first phosphor is more localized towards the first principal face than the second phosphor. The second phosphor is a manganese-activated fluoride phosphor.

Abstract: An LED light-emission device includes a substrate, an LED chip, a phosphor-containing resin containing a phosphor and covering the LED chip, and a diffusing agent-containing resin containing a diffusing agent that diffuses light emitted from the phosphor-containing resin and sealing the phosphor-containing resin. The LED chip, the phosphor-containing resin, and the diffusing agent-containing resin are placed on a same flat face of the substrate.

Abstract: The method for manufacturing a light-emitting device includes flip-chip mounting a first light-emitting element and a second light-emitting element on a substrate separately from each other, bonding a first light-transmissive member to the first light-emitting element, the first light-transmissive member having a first lateral surface, and bonding a second light-transmissive member to the second light-emitting element, the second light-transmissive member having a second lateral surface, with the second lateral surface being separated from and facing the first lateral surface, scraping at least one of the first lateral surface and the second lateral surface to expose at least one of a modified first lateral surface and a modified second lateral surface, forming a light-reflective covering member on the substrate to cover the first lateral surface or the modified first lateral surface, and the second lateral surface or the modified second lateral surface, and cutting the substrate and the covering member betwe

Abstract: A semiconductor package device includes an electronic device. The electronic device includes a first carrier, a first electronic component, a second carrier, a second electronic component, an encapsulant, and a lens. The first electronic component is disposed on the first carrier. The second carrier defines an aperture and is disposed on the first carrier. The aperture is positioned over the first electronic component and exposes the first electronic component. The second electronic component is disposed on the second carrier. The encapsulant covers the second electronic component. The lens defines a cavity and is disposed on the aperture of the first carrier.

Abstract: A display apparatus includes a substrate, a light-emitting diode (“LED”) provided above the substrate, an insulating layer provided above the LED, and a wire grid polarizer (“WGP”) provided above the insulating layer.

Abstract: This disclosure discloses a light-emitting device includes a semiconductor stack, an electrode, an electrode post, a reflective insulating layer, an extending electrode, and a supporting structure. The electrode is disposed on a lower surface of the semiconductor stack, and electrically connected to the semiconductor stack. The electrode post is disposed on the electrode. The reflective insulating layer surrounds the electrode post, and has a bottom surface which is coplanar with the electrode post. The extending electrode is disposed on an upper surface of the semiconductor stack. The supporting structure is located on the extending electrode.

Abstract: An LED module according to the present invention includes an LED unit 2 and a case 1, where the LED unit includes an LED chip 21, and the case 1 includes a main body 11 made of a ceramic material and a pad 12a on which the LED unit 2 is mounted. The outer edge 121a of the pad 12a is positioned inward of the outer edge 2a of the LED unit 2 as viewed in plan. These arrangements prevent the light emission amount of the LED module A1 from reducing with time.

Abstract: Bonding strength with which a substrate and an adhesive layer are bonded together to seal a piezoelectric vibrator on the substrate is enhanced. A piezoelectric vibration component includes a lid including a recess and a flange protruding outward from an opening edge of the recess. Moreover, the component includes a substrate having a first area opposing the recess and a second area opposing the flange. A piezoelectric vibrator is mounted on the first area, and an adhesive layer bonds the second area and the flange together to seal the piezoelectric vibrator in a space between the recess and the first area. The second area has surface roughness greater than surface roughness of the first area.

Abstract: A method may include: providing a device stack, the device stack comprising sidewall portions and extending above a substrate base, the device stack further including a plurality of metal layers; depositing an interface layer conformally over the device stack using an atomic layer deposition process, the interface layer comprising a first insulator material; depositing an encapsulation layer on the interface layer, the encapsulation layer comprising a second insulator material; and depositing an interlevel dielectric disposed on the encapsulation layer, the interlevel dielectric comprising a third insulator material.

Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A magnetic reference layer is formed adjacent to a tunnel barrier layer. The magnetic reference layer includes a pinned layer, a spacer layer adjacent to the pinned layer, and a polarizing enhancement layer adjacent to the spacer layer. A magnetic free layer is formed adjacent to the tunnel barrier layer so as to be opposite the magnetic reference layer.

Abstract: A magnetic memory device may include a free magnetic pattern and a capping pattern on a surface of the free magnetic pattern. The capping pattern may include first and second metal elements. The capping pattern may include a first portion adjacent to an interface between the free magnetic pattern and the capping pattern, and a second portion spaced apart from the interface. The first metal element may have a concentration greater in the first portion than in the second portion. The first metal element may have an atomic weight smaller than that of the second metal element. The concentration of the first metal element along the thickness direction of the capping pattern may be proportional to a proximity to the interface.

Abstract: An electronic device is presented, the device comprises: a spin accumulating structure; a spin selective filter electrically connected at a first end thereof to a first surface of said spin accumulating layer structure; a charge carrier source attached to said spin selective filter at a second end of the spin selective filter; wherein the spin selective filter is configured to allow passage of the charge carriers having a predetermined spin orientation from the charge carrier source to the spin accumulating structure, thereby causing a variation of spin distribution of the charge carriers within the spin accumulating structure. The device comprises further at least first and second pairs of electrical contacts which are connected to the spin accumulating structure and define first and second electrical paths through said spin accumulating structure, said first and second electrical paths intersecting within said spin accumulating structure.

Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A synthetic antiferromagnetic reference layer is adjacent to a tunnel barrier layer. The synthetic antiferromagnetic reference layer includes a first magnetic layer, a second magnetic layer, and a reference spacer layer sandwiched between the first magnetic layer and the second magnetic layer. A magnetic free layer is adjacent to the tunnel barrier layer so as to be opposite the synthetic antiferromagnetic reference layer. The synthetic antiferromagnetic reference layer has a thickness of at least one of 3 nanometers (nm), 4 nm, and 3-4 nm.

Abstract: Provided are a multi-layered magnetic thin film stack, a magnetic tunneling junction, and a data storage device. The multi-layered magnetic thin film stack includes a FePd alloy layer including an alloy of iron (Fe) and palladium (Pd); a tunneling barrier layer, which includes MgO and is disposed on the FePd alloy layer; and a Heusler alloy layer disposed between the FePd alloy layer and the tunneling barrier layer, wherein the FePd alloy layer and the Heusler alloy layer constitute a hybrid magnetic layer.

Abstract: Techniques relate to forming a semiconductor device. A magnetic pinned layer is formed adjacent to a tunnel barrier layer. A magnetic free layer is formed adjacent to the tunnel barrier layer, such that the tunnel barrier layer is sandwiched between the magnetic pinned layer and the magnetic free layer. The magnetic free layer includes a first magnetic layer, a second magnetic layer disposed on top of the first magnetic layer, and a third magnetic layer disposed on top of the second magnetic layer. The second magnetic layer of the magnetic free layer includes an additional material, and the additional material is a selection of at least one of Be, Mg, Al, Ca, B, C, Si, V, Cr, Ti, and Mn.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming an opening with a tapered profile in a first material layer. An upper width of the opening is greater than a bottom width of opening. The method also includes forming a second material layer in the opening and forming a hard mask to cover a portion of the second material layer. The hard mask aligns to the opening and has a width smaller than the upper width of the opening. The method also includes etching the second material layer by using the hard mask as an etch mask to form an upper portion of a feature with a tapered profile.

Abstract: Provided are a magnetic sensor and a method of manufacturing the same. In the magnetic sensor and the method of manufacturing the same, a magnetic converging plate holder with a recessed pattern having the same shape and size as those of a magnetic converging plate is formed in a die pad of a package on which a semiconductor substrate having Hall elements, a circuit, and the like is to be arranged, the magnetic converging plate manufactured through processes different from those of the semiconductor substrate on which the Hall elements and the circuit are formed is inserted into the magnetic converging plate holder, and the semiconductor substrate having the Hall elements, the circuit, and the like is arranged on the resultant so that a back surface thereof faces the die pad and the magnetic converging plate.

Abstract: A phase change storage device, Integrated Circuit (IC) chip including the devices and method of manufacturing IC chips with the devices. The device includes a phase change storage region with multiple phase change regions, e.g., two (2), of different phase change material serially-connected between said program/read line and a select device conduction terminal.

Abstract: A resistive random access memory device and a method for fabricating the same are presented. The resistive random access memory device includes a first electrode having a first dopant within. A second electrode is disposed on the first electrode. A resistive switching layer is disposed between the first electrode and the second electrode.

Abstract: A method for manufacturing resistive random access memories, each resistive random access memory including first and second electrodes separated by a layer of active material, the method including producing connector elements with a step Cp along a first direction, each connector element having a width Cb along the first direction; producing a plurality of first electrodes with a step Ep along the first direction, each first electrode having a first end surface and a second end surface, the second end surface having a width Eb along the first direction and an area greater than the area of the first end surface; wherein: 0<Ep?Eb?Cp?Cb and:Eb<Cp?Cb such that, for each connector element, a first electrode is in contact, via its second end surface, with the connector element, and each first electrode is only in contact, via its second end surface, with at the most one connector element.

Abstract: A method of semiconductor device fabrication that includes sequentially forming an interfacial conductive layer and an etch stop layer on a resistive memory layer; forming a main conductive layer on the etch stop layer; exposing a portion of the etch stop layer by patterning the main conductive layer; exposing a portion of the interfacial conductive layer by patterning the portion of the etch stop layer; forming an upper electrode structure by patterning the portion of the interfacial conductive layer; cleaning a surface of the upper electrode structure and an exposed surface of the resistive memory layer; and patterning the resistive memory layer using the upper electrode structure as an etch mask.

Abstract: The present invention relates to a formulation comprising at least one organofunctional material which can be employed for the production of functional layers of electronic devices, and at least one aromatic compound. The present invention furthermore relates to electronic devices which are obtainable from these formulations.

Abstract: The present disclosure pertains to the field of carbon nanotube technologies, and provides a carbon nanotube semiconductor device and a manufacturing method thereof. The manufacturing method of a carbon nanotube semiconductor device provided in the present disclosure comprises: forming a carbon nanotube layer with a carbon nanotube solution; and treating the carbon nanotube layer with an acidic solution. The carbon nanotube semiconductor device manufactured by the method of the present disclosure has good performance uniformity.

Abstract: An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

Abstract: The invention relates to novel mixtures of substituted fullerenes, to their use in organic electronic (OE) devices, especially organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising these fullerene mixtures.

Abstract: A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer.

Abstract: An organic light-emitting device including a first electrode; a second electrode; emission units stacked between the first electrode and the second electrode and including at least one emission layer; and charge generation layers between two adjacent emission units, the charge generation layers each including an n-type charge generation layer and p-type charge generation layer, a maximum emission wavelength of light emitted by at least one of the emission units is different from that of another emission unit, one n-type charge generation layer includes a first compound and a metal-containing material, the first compound being represented by Formula 1, the p-type charge generation layers include an amino group-free compound, at least one of the emission units further includes a hole transporting (HT)-emission auxiliary layer on a first electrode side thereof, and the HT-emission auxiliary layer includes at least one second compound, the second compound being represented by Formula 2:

Abstract: Provided are a novel aromatic amine derivative having a specific structure and an organic electroluminescence device in which an organic thin layer comprising a single layer or plural layers including a light emitting layer is interposed between a cathode and an anode, wherein at leas one layer of the above organic thin layer contains the aromatic amine derivative described above in the form of a single component or a mixed component. Thus, the organic electroluminescence device is less liable to be crystallized in molecules, improved in a yield in producing the organic electroluminescence device and extended in a lifetime.

Abstract: Example embodiments provide a compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same.

Abstract: The present disclosure relates to an organic electroluminescent compound, and an organic electroluminescent material and an organic electroluminescent device comprising the same. The organic electroluminescent compound of the present disclosure has excellent color purity, solubility, and thermal stability. By comprising the organic electroluminescent compound and the organic electroluminescent material of the present disclosure, an organic electroluminescent device showing low driving voltage, excellent current and power efficiencies, and significantly improved lifespan can be provided.

Abstract: A compound of formula (I) wherein: X is0, S, NR11, CR11 2or SiR11 2wherein R11 in each occurrence is independently a substituent; R1is a substituent; R2, R3, and R4are each independently H or a substituent;R5and R6independently in each occurrence is a substituent;m independently in each occurrence is 0, 1 or 2; and n independently in each occurrence is 0, 1, 2, 3 or 4. The compound may be used as a host for a phosphorescent light-emitting material in an organic light-emitting device.

Abstract: The present invention relates to a compound for an organic optoelectronic element represented by Chemical Formula 1, an element comprising the same, and a display device comprising the organic optoelectronic element (details of Chemical Formula 1 are as described in the specification).

Abstract: A method of synthesizing a fused heteroaromatic compound includes obtaining a first intermediate from a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2, obtaining a second intermediate including a ring having a chalcogen element from the first intermediate, and obtaining a fused heteroaromatic compound by a cyclization reaction of the second intermediate.

Abstract: A dibenzo[f,h]quinoxaline derivative in which impurities are reduced and a novel method of synthesizing the dibenzo[f,h]quinoxaline derivative in which impurities are reduced are provided. In addition, a light-emitting element, a light-emitting device, an electronic appliance, or a lighting device with high emission efficiency and high reliability in which the dibenzo[f,h]quinoxaline derivative is used as an EL material is provided. In the synthesis method, a 2-(chloroaryl)dibenzo[f,h]quinoxaline derivative is used as a synthetic intermediate in a synthetic pathway so that an impurity contained in a final product can be removed easily by purification by sublimation.

Abstract: A hole transporting material having excellent heat resistance and durability, a perovskite solar cell including the hole transporting material in a hole transporting layer, and a method for manufacturing the solar cell are provided. Provided is a perovskite solar cell having PCE which is equal to or greater than PCE in the related art because the hole transporting layer is formed by using the hole transporting material in which the phthalocyanine-based organic ligand is coordinate-bonded to metal. Also, provided is a perovskite solar cell which can maintain initial PCE for a long time in a wide temperature range when the hole transporting material is used as the hole transporting layer due to excellent heat resistance and durability.

Abstract: An organometallic compound represented by one of Formulae 1A and 1B: wherein, in Formulae 1A and 1B, A11, b20, L11, M, m, n, and R15 to R20 are the same as described in the specification.

Abstract: A compound that includes a ligand L, having the formula, is provided. In the structure of Formula I, each R1, R2, R3, R4, R4, R5, R6, R7, and R8 is independently selected from a variety of substituents; any adjacent substituents are optionally joined or fused into a ring; at least one of R3, R4, and R5 is not hydrogen; “a” is an integer from 0 to 10; (i) when a is 0, at least one of R7, R8, and an R2 adjacent to ring B, is not hydrogen, and (ii) when a is 1 to 10, at least one of an R2 adjacent to ring A and an R6 adjacent to ring C is not hydrogen; ligand L is coordinated to a metal M having an atomic weight greater than 40; and ligand L is optionally linked with other ligands to comprise a tridentate, tetradentate, pentadentate or hexadentate ligand.

Abstract: An iridium complex is disclosed. The iridium complex includes the following ligands: 2-(4,6-difluoromethyl and trifluoromethyl pyridine-3-) butypyridine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-4-) butypyridine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-3-) butypyrimidine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-4-) butypyrimidine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-3-) butypyrazine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-4-) butypyrazine, and the derivatives of 2-(4,6-difluoromethyl and trifluoromethyl pyridine-3-) butytriazine and 2-(4,6-difluoromethyl and trifluoromethyl pyridine-4-) butytriazine. Such new iridium complex in the invention not only owns the high luminous efficiency, stable chemical property, easy sublimation purification and other advantages, but also has good device performance.

Abstract: An iridium complex is disclosed. The iridium complex includes two primary ligands selected from 2-(4,6-difluoromethyl and trifluoromethyl pyridine-3-) butypyridine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-4-) butypyridine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-3-) butypyrimidine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-4-) butypyrimidine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-3-) butypyrazine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-4-) butypyrazine, and the derivatives of 2-(4,6-difluoromethyl and trifluoromethyl pyridine-3-) butytriazine and 2-(4,6-difluoromethyl and trifluoromethyl pyridine-4-) butytriazine. The iridium complex further includes an auxiliary acetylacetone ligand. Such new iridium complex in the invention not only owns the high luminous efficiency, stable chemical property, easy sublimation purification and is other advantages, but also has good device performance.

Abstract: An iridium complex is disclosed. The iridium complex with tetraphenylphosphorane as an auxiliary ligand takes any one of 2-(4,6-bi trifluoromethyl)pyridine, 2-(4,6-bi trifluoromethyl)pyrimidine, 2-(4,6-bi trifluoromethyl)pyrazinyl and 2-(4,6-bi trifluoromethyl) triazine derivatives as primary ligands in its molecule. The new type of iridium complex covered by the present invention has not only such advantages as high luminous efficiency, high electron mobility, stable chemical property, easy for sublimation and purification but also good performance of devices. By modifying the molecular structure of the primary ligands, it allows to adjust the luminous intensity and efficiency of the complex, thus facilitating the design and production of organic light-emitting diode and illumination source. Meanwhile, the synthesis method of a series new type of iridium complexes of the present invention is simple with high yield and is flexible in chemical modification of ligands.

Abstract: An iridium complex is disclosed. The iridium complex with tetra(4-fluorophenyl) phosphorane as an auxiliary ligand, the series of iridium complex takes any one of 2-(4,6-bi trifluoromethyl)pyridine, 2-(4,6-bi trifluoromethyl)pyrimidine, 2-(4,6-bi trifluoromethyl)pyrazinyl and 2-(4,6-bi trifluoromethyl) triazine derivatives as primary ligands in its molecule. The new type of iridium complex covered by the present invention has not only such advantages as high luminous efficiency, high electron mobility, stable chemical property, easy for distillation and purification but also good performance of devices. By modifying the molecular structure of the primary ligands, it allows to adjust the luminous intensity and efficiency of the complex, thus facilitating the design and production of organic light-emitting diode and illumination source.

Abstract: An iridium complex is disclosed. The iridium complex with a new type of primary ligand and (4-trifluoromethyl) tetraphenylphosphorane as an auxiliary ligand takes any one of 2-(4,6-bi trifluoromethyl-3-) pyridine, 2-(4,6-bi trifluoromethyl-4-) pyridine, 2-(4,6-bi trifluoromethyl-3-) pyrimidine, 2-(4,6-bi trifluoromethyl-4-) pyrimidine, 2-(4,6-bi trifluoromethyl-3-) pyrazinyl, 2-(4,6-bi trifluoromethyl-4-) pyrazinyl, 2-(4,6-bi trifluoromethyl-3-) triazine, 2-(4,6-bi trifluoromethyl-4-) triazine derivatives as primary ligands in its molecule. By modifying the molecular structure of the primary ligands, the new type of iridium complex covered by the present invention allow to adjust the luminous intensity and efficiency of the complex, thus facilitating the design and production of organic light-emitting diode and illumination source. Meanwhile, the synthesis method of a series new type of iridium complexes of the present invention is simple with high yield and flexible in chemical modification of ligands.

Abstract: An iridium complex is disclosed. The iridium complex with a new type of primary ligand and (4-trifluoromethyl) tetraphenylphosphorane as an auxiliary ligand takes any one of 2-(4,6-bi trifluoromethyl-3-) pyridine, 2-(4,6-bi trifluoromethyl-4-) pyridine, 2-(4,6-bi trifluoromethyl-3-) pyrimidine, 2-(4,6-bi trifluoromethyl-4-) pyrimidine, 2-(4,6-bi trifluoromethyl-3-) pyrazinyl, 2-(4,6-bi trifluoromethyl-4-) pyrazinyl, 2-(4,6-bi trifluoromethyl-3-) triazine, 2-(4,6-bi trifluoromethyl-4-) triazine derivatives as primary ligands in its molecule. By modifying the molecular structure of the primary ligands, the new type of iridium complex covered by the present invention allow to adjust the luminous intensity and efficiency of the complex, thus facilitating the design and production of organic light-emitting diode and illumination source. Meanwhile, the synthesis method of a series new type of iridium complexes of the present invention is simple with high yield and flexible in chemical modification of ligands.

Abstract: An iridium complex is disclosed. The iridium complex with new type primary ligand, and an auxiliary ligand of 4(3,5-pyrimidine) phosphonimidesas. The iridium complex of this series has primary ligand in molecule which is the any one derivative of the following ones: 2-(4,6-pyridine2-(trifluoromethyl)pyridine-3-)pyridine, 2-(4,6-pyridine2-(trifluoromethyl)pyridine-4-)pyridine, 2-(4,6-pyridine2-(trifluoromethyl)pyridine-3-)pyrimidine, 2-(4,6-pyridine2-(trifluoromethyl)pyridine-4-)pyrimidine, 2-(4,6-pyridine2-(trifluoromethyl)pyridine-3-)pyrazinyl, 2-(4,6-pyridine2-(trifluoromethyl)pyridine-4-)pyrazinyl, 2-(4,6-pyridine2-(trifluoromethyl)pyridine-3-)triazinetriazine, 2-(4,6-pyridine2-(trifluoromethyl)pyridine-4-)triazinetriazinederivative; the new type of iridium complex covered by the present invention has not only such advantages as high luminous efficiency, high electron mobility, stable chemical property, easy for distillation and purification but also good performance of devices.

Abstract: An iridium complex is disclosed. The iridium complex takes 2-(5-phenyl-1,3,4-oxadiazoles-2-) phenol as the auxiliary ligand, and main ligand of the iridium complex molecule includes the following ligands: 2-(4,6-difluoromethyl and trifluoromethyl pyridine-3-) butypyridine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-4-) butypyridine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-3-) butypyridine, 2-(4,6-difluoromethyl and trifluoromethyl pyridine-4-) butypyrazine, and 2-(4,6-difluoromethyl and trifluoromethyl pyridine-3-) butytriazine and 2-(4,6-difluoromethyl and trifluoromethyl pyridine-4-) butytriazine derivatives. Such new iridium complex in the invention not only owns the high luminous efficiency, stable chemical property, easy sublimation purification and other advantages, but also has good device performance.

Abstract: An iridium complex is disclosed. The main auxiliary ligand of the iridium complex molecule is selected from 2-(4,6-bistrifluoromethylpyridine) pyridine, 2-(4,6-bistrifluoromethylpyridine) DMCP, 2-(4,6-bistrifluoromethylpyridine) tetramethypyrazine and 2-(4,6-bistrifluoromethylpyridine) triazine derivatives. Such new iridium complex in the invention not only owns the high luminous efficiency, stable chemical property, easy sublimation purification and other advantages, but also has good device performance. By embellishing the molecular structure of ligand, it could adjust the light intensity and efficiency of complexes within the scope of green light wavelength, which provides the convenience for the design and production of Organic Light Emitting Device and lighting source.

Abstract: A perovskite compound represented by Formula 1, a thin layer including the perovskite compound, and an optoelectronic device including the perovskite compound: [A][B1nB2(1-n)][X]3.??Formula 1 In Formula 1, A may be at least one selected from a monovalent organic cation, monovalent inorganic cation, and combinations thereof; B1 may be a thulium (II) (Tm2+) ion; B2 may be at least one divalent inorganic cation, where B2 is free of (e.g., does not include) Tm2+; n may be a real number that satisfies 0<n?1; and X may be at least one monovalent anion.