Abstract: The disclosure provides methods for identifying genomic loci that are differentially methylated in colorectal neoplasias. Identification of methylated genomic loci has numerous uses, including for example, to characterize disease risk, to predict responsiveness to therapy, to non-invasively diagnose subjects and to treat subjects determined to have colorectal neoplasias.

Abstract: Methods are provided for determining whether a cancer patient is likely or not likely to experience HFSR (hand foot skin reaction) from a therapy comprising administration of an effective amount of regorafenib or an equivalent thereof, the methods including screening a biological sample isolated from the patient for the rs2280789 polymorphism, and/or the rs3817655 polymorphism. Methods are further provided for identifying the clinical outcome of cancer patients following a therapy comprising regorafenib or an equivalent thereof, the methods entailing screening a biological sample isolated from the patient for the rs7527092 polymorphism, and/or rs2071559 polymorphism. After determining if a patient is likely to be successfully treated, the disclosure also provides methods for treating the patient.

Abstract: Provided herein are methods of identifying a subject having a poly-ADP ribose polymerase (PARP) inhibitor-sensitive tumor by detecting a genomic gain in chromosome 1q21 and/or chromosome 20q13.3 in a tumor sample from the subject. Also provided are methods of identifying a subject having a PARP inhibitor-sensitive tumor by detecting gene amplification of a CHD1L gene or an RTEL1 gene in a tumor sample from the subject. Further provided are methods of treating a tumor with a genomic gain in chromosome 1q21 and/or chromosome 20q13.3 in a subject by administering an effective dose of a PARP inhibitor.

Abstract: The present invention relates to methods for the identification of anti-HIV miRNAs and anti-HIV pharmaceutical compounds using high-throughput screening methods, comprising: transfecting reporter cells with a panel of miRNAs, infecting the reporter cells with HIV, screening the cells to identify miRNAs that modulate HIV infection and identifying the specific pathways, nucleic acids and/or polypeptides that are targeted by the miRNAs. The invention further provides for the identification and screening of anti-HIV pharmaceutical compounds having known activity against the specific pathways, nucleic acids and/or polypeptides that are targeted by the miRNAs for efficacy in the treatment of HIV. The invention also provides for the use of miRNA mimics, miRNA inhibitors and pharmaceutical compounds (including oncology drugs and kinase inhibitors) in the treatment and/or prevention of HIV infection.

Abstract: This invention relates to methods and compositions for identifying microbial DNA in the tissues or body fluid samples of patients. More particularly, the invention relates to two-step polymerase chain reaction based methods for identifying microbial DNA in the tissues or body fluid samples of patients, and compositions therefor. Microbial DNA can also be quantified using the methods described herein.

Abstract: The invention provides DNA compositions that relate to transgenic insect resistant maize plants. Also provided are assays for detecting the presence of the maize DP-004114-3 event based on the DNA sequence of the recombinant construct inserted into the maize genome and the DNA sequences flanking the insertion site. Kits and conditions useful in conducting the assays are provided.

Abstract: The present disclosure provides reactive quencher dyes that can be used in the detection and/or quantification of desirable target molecules, such as proteins, nucleic acids and various cellular organelles. These dyes are essentially non-fluorescent but are efficient quenchers of various fluorescent dyes. Also, provided are methods of using the dyes, bio-probes incorporating dyes and methods of using the bio-probes. The quencher dyes described herein are modified to provide beneficial properties.

Abstract: The present invention provides processes for catalytic deconstruction of biomass using a solvent produced in a bioreforming reaction.

Abstract: Solid saccharides are produced from an aqueous saccharide solution in a process, where the aqueous saccharide solution is admixed with a carrier liquid in which the saccharides are insoluble and that has a boiling point higher than that of water to obtain an aqueous admixture, and where the aqueous admixture is subjected to an evaporation step. The heat for the evaporation is at least partially supplied by a heated surface area to yield a vapor fraction including water and a residue fraction including solid saccharides and carrier liquid.

Abstract: The present disclosure relates to systems, methods, and processes for the production of sugars and conversion products from biomass.

Abstract: A thick-walled, high-toughness, high-strength steel plate manufactured from steel having a particular composition and casted under conditions where the cooling rate of a surface during solidification is 1° C./s or less. The surface of the steel plate has a toughness (vE-40) of 70 J or more, and the steel plate has a thickness of 100 mm or more.

Abstract: The present invention relates to a method of manufacturing a directional electric steel plate having excellent surface wettability and magnetic properties. More particularly, the present invention relates to a directional electric steel plate in which a surface of a steel plate consisting of Si: 2.0 to 6.5%, acid soluble Al: 0.4 to 5%, Mn: 0.20% or less (0% exclusive), N: 0.010% or less (0% exclusive), S: 0.010% or less (0% exclusive), P: 0.005 to 0.05%, C: 0.04 to 0.12% and a balance of Fe and other unavoidable impurities is hot-dip plated with aluminum or an aluminum-silicon alloy, and heat-treated, so that aluminum on the hot-dip plated layer is diffused or infiltrated into the steel plate, and a method of manufacturing the same.

Abstract: A grain-oriented electrical steel plate of an exemplary embodiment of the present invention has a groove formed on a surface, wherein a curvature radius RBb at a position where a depth of the groove is maximum is 0.2 ?m to 100 ?m, and a curvature radius RSb on the groove surface from the position where the depth of the groove is maximum to a quarter-way position of the depth D of the groove is 4 ?m to 130 ?m.

Abstract: The present invention relates to a rail which has a predetermined chemical composition and in which at least 90% of a metallographic structure from an outer surface of the rail bottom portion, as the origin, to a depth of 5 mm is a pearlite structure, a surface hardness HC of a foot-bottom central portion is in a range of Hv 360 to 500, a surface hardness HE of a foot-edge portion is in a range of Hv 260 to 315, and HC, HE, and a surface hardness HM of a middle portion positioned between the foot-bottom central portion and the foot-edge portion satisfy HC?HM?HE.

Abstract: A high-strength high-toughness electric-resistance-welded steel pipe having high resistance to post-weld heat treatment is provided. The steel pipe having a composition including C: 0.01% to 0.12%, Si: 0.05% to 0.50%, Mn: 1.0% to 2.2%, P: 0.03% or less, S: 0.005% or less, Al: 0.001% to 0.10%, N: 0.006% or less, Nb: 0.010% to 0.100%, and Ti: 0.001% to 0.050%. The steel pipe having a structure composed of 90% or more by volume of a bainitic ferrite phase and 10% or less (including 0%) by volume of a second phase. The bainitic ferrite phase having an average grain size of 10 ?m or less, and the structure containing fine Nb precipitates having a particle size of less than 20 nm dispersed in a base material portion. The steel pipe having high strength and toughness that is maintained through post-weld heat treatment, including heating to a temperature of 600° C. or more.

Abstract: A method of manufacturing a seamless stainless steel pipe for Oil Country Tubular Goods by heating a billet having a specified chemical composition including forming the billet into a seamless steel pipe by applying hot working to the billet, cooling the seamless steel pipe to a room temperature at a cooling rate of air cooling or more, thereafter, performing quenching by heating the seamless steel pipe to a temperature of 850° C. or above, subsequently, cooling the seamless steel pipe to a temperature of 100° C. or below at a cooling rate of air cooling or more, and subsequently, applying tempering to the seamless steel pipe at a temperature of 700° C. or below for a specific holding time.

Abstract: A Si/Mn ratio of steel material components of a base material is not less than 0.27 nor more than 0.90 in mass ratio, an internal oxide layer having a thickness of not less than 1 ?m nor more than 30 ?m is provided right below an oxide scale of a steel sheet surface layer portion, and regarding the internal oxide layer, an internal oxide in a crystal grain of the internal oxide layer is an oxide containing Si and having a thickness of not less than 10 nm nor more than 200 nm in a crystal grain in a range of greater than 0% and 30% or less of a thickness of the internal oxide layer from an interface between the internal oxide layer and base iron toward a direction of the surface layer oxide scale, one or more branches of the internal oxide exist in a cross section of 1 ?m×1 ?m square, and in any crystal grain boundary having a length of 1 ?m, one or more of the internal oxides in the crystal grain are connected to an internal oxide of the crystal grain boundary to form a net-like structure.

Abstract: A high-strength plated steel sheet has a plated layer on the surface of a base steel sheet and contains predetermined steel components. The steel sheet includes, in the order from the interface of the base steel sheet and the plated layer towards the base steel sheet: a soft layer having a Vickers hardness that is 90% or less of the Vickers hardness at a portion t/4 of the base steel sheet, where t is a sheet thickness of the base steel sheet; and a hard layer containing martensite and bainite, and ferrite in predetermined ranges. The average depth D of the soft layer is 20 ?m or greater, and the average depth d of an internal oxide layer is 4 ?m or greater and smaller than D.

Abstract: The present invention relates to a steel having a microstructure composed of bainite and retained austenite, wherein the area ratio of the retained austenite 10% or more, and the retained austenite is composed of a film type retained austenite whose length is more than 3 times the width and a block type retained austenite whose length is less than 3 times the width, and wherein the area of the film type retained austenite is 60% or more of the total area of the retained austenite. The steel of the present invention can exhibit excellent strength and elongation.

Abstract: Materials and methods for precious metal recovery are disclosed. Usable leaching solutions are preferably aqueous based and include appropriate materials in sufficient quantities to solubilize and stabilize precious metal. Such materials typically include oxidant material. Some or all of the oxidant material can be, in some instances, generated in-situ. The leaching solution is typically contacted with a substrate having a target precious metal, thereby solubilizing precious metal to form a stable, pregnant solution. The precious metal can then be recovered from the pregnant solution. In some instances, components of the leaching solution can be regenerated and reused in subsequent leaching.

Abstract: A method of improving leach kinetics and recovery during atmospheric or above-atmospheric leaching of a metal sulfide is disclosed. A system for practicing the aforementioned method is also disclosed. Apparatus for practicing the aforementioned method is also disclosed. A new composition of matter which is formed by the aforementioned method, and which may be utilized in the system and apparatus is further disclosed. The new composition of matter may exhibit improved leach kinetics, and may have some utility in the semi-conductor arts, including uses within photovoltaic materials.

Abstract: The present invention addresses the problem of providing a novel, sold metal alloy. Provided is a metal alloy containing two or more types of metal, wherein an equilibrium diagram of the metal alloy shows the two or more types of metal in a finely mixed state at the nanolevel in a specific region where the two types of metal are unevenly distributed. This metal alloy has a substitutional solid solution of the two or more types of metal as the principal constituent thereof. This metal alloy is preferably one obtained by precipitation after mixing ions of two or more types of metal and a reducing agent in a thin-film fluid formed between processing surfaces, at least one of which rotates relative to the other, which are arranged so as to face one another and are capable of approaching and separating from one another.

Abstract: Differing from traditional alloys often containing one primary elemental composition, the present invention reforms a conventional superalloy to a high-entropy superalloy by redesigning the elemental compositions of the conventional superalloy based on a mixing entropy formula. Particularly, this high-entropy superalloy shows advantages of light weight and low cost under the premise of containing a low amount of expensive metal composition. The proposed high-entropy superalloy of the present invention comprises a primary elemental composition and at least one principal strengthening elemental composition, wherein the primary elemental composition has a first element content of at least 35 at % and each of the principal strengthening elemental compositions have a second element content of over 5 at %.

Abstract: A corrodible downhole article includes a magnesium alloy, including: a strengthening metallic element comprising at least one of Al, Zn, Mn, Cu and Ag and at least one corrosion promoting element in an amount of 0.01-10 wt % in total. The alloy has a corrosion rate of at least at least 75 mg/cm2/day in 15% KC1 at 93° C. and a 0.2% proof strength of at least 100MPa when tested using standard tensile test method ASTM B557-10. In particular, the magnesium alloy includes 5-10 wt % Al, and at least one of Zn and Mn in a total amount ranging from 0 to 1.0 wt %.

Abstract: An Mg—Li alloy contains more than 10.50% by mass and not more than 16.00% by mass of Li, not less than 2.00% by mass and not more than 15.00% by mass of Al, not less than 0.03% by mass and less than 1.10% by mass of Mn, impurities, and the balance of Mg. The impurities contain Fe at a concentration of 15 ppm or less. The alloy may optionally contain M, which is at least one element selected from the group consisting Ca, Zn, Si, Y, and rare earth metal elements with atomic numbers of 57 to 71.

Abstract: A cemented carbide for fluid handling components or a seal ring has a composition in wt %; about 7-11 Ni; about 0.5-2.5 Cr3C2; and about 0.5-1 Mo; and a balance of WC, with an average WC grain size greater than or equal to 4 ?m.

Abstract: The present invention relates to an ultra-high strength, hot-dip galvanized steel sheet having excellent surface quality and coating adherence and to a method for manufacturing thereof, the ultra-high strength, hot-dip galvanized steel sheet comprising: 0.1-0.3% by weight carbon (C); 0.1-2.0% by weight silicon (Si); 0.005-1.5% by weight aluminum (Al); 1.5-3.5% by weight manganese (Mn); 0.04% by weight or less phosphorus (P) (excluding 0% by weight); 0.015% by weight or less sulphur (S) (excluding 0% by weight); 0.02% by weight or less nitrogen (N) (excluding 0% by weight); the balance being Fe; and other inevitable impurities, and further comprising 0.01 wt.% to 0.07 wt.% of at least one kind of element selected from the group consisting of bismuth (Bi), tin (Sn) and antimony (Sb).

Abstract: The present invention relates to a rail which has a predetermined chemical composition and satisfies expressions of 1.00<Mn/Cr?4.00 and 0.30?0.25×Mn+Cr?1.00 and in which a structure to a depth of 25 mm from an outer surface of a head portion as the origin includes 95% or greater of a pearlite structure, the hardness of the structure is in a range of Hv 350 to 480, 50 to 500 V carbonitride having an average grain size of 5 to 20 nm are present per 1.0 ?m2 of an area to be inspected in a transverse cross section at a position having a depth of 25 mm from the outer surface of the head portion, and the value obtained by subtracting the hardness of the position having the depth of 25 mm from the outer surface of the head portion from the hardness of the position having a depth of 2 mm from the outer surface of the head portion is in a range of Hv 0 to Hv 40.

Abstract: The present invention disclosed an ultra-high strength steel for structural components, a process of making such steel that has a desirable microstructure in the thermo-mechanically processed and differently cooled conditions that delivers high fatigue performance in service, and a process of making forged components using such steel. The steel and the process of its manufacturing enables manufacture of components that exhibit bainitic microstructure that impart ultra-high strength ranges with very high fatigue performance. The invention enables saving in alloying additives compared to hardened and tempered alloy steels and in addition avoid expensive heat treatment operations to achieve the desired range of mechanical properties. The steel of the invention is a suitable replacement for micro alloyed steel or heat treated steel bars used for structural component development.

Abstract: An iron-based sintered body includes a metal matrix and complex oxide particles contained in the metal matrix. When a main viewing field having an area of 176 ?m×226 ?m is taken on a cross section of the iron-based sintered body and divided into a 5×5 array of 25 viewing fields each having an area of 35.2 ?m×45.2 ?m, the complex oxide particles have an average equivalent circle diameter of from 0.3 ?m to 2.5 ?m inclusive, and a value obtained by dividing the total area of the 25 viewing fields by the total number of complex oxide particles present in the 25 viewing fields is from 10 ?m2/particle to 1,000 ?m2/particle inclusive. The number of viewing fields in which no complex oxide particle is present is 4 or less out of the 25 viewing fields.

Abstract: Disclosed are alloys for anodized-quality aluminum sheets with improved surface quality, and methods for making these sheets. The alloys are designed to minimize the formation of cathodic intermetallic particles that result in surface streaks of anodized sheet products formed from the alloys. Further, the alloys allow the incorporation of recycled scrap aluminum in anodized-quality sheets.

Abstract: Provided is a high-strength hot-dip galvanized steel sheet having excellent plating adhesion, formability, and hole expandability with an ultimate tensile strength of 980 MPa or more, the hot-dip galvanized steel sheet comprising a hot-dip galvanized layer formed on a surface of a base steel sheet. The base steel sheet contains, by mass %, C: 0.05% to 0.4%; Si: 0.01% to 3.0%; Mn: 0.1% to 3.0%; Al: 0.01 to 2.0%; in which Si+Al>0.5%, P: limited to 0.04% or less; S: limited to 0.05% or less; N: limited to 0.01% or less; and a balance including Fe and inevitable impurities, a microstructure of the base steel sheet contains 40% or more by total volume fraction of martensite and bainite, 8% or more by volume fraction of residual austenite, and a balance of the microstructure being ferrite or ferrite and 10% or less by volume fraction of pearlite.

Abstract: A system (100), apparatus (110), and method (900) for monitored thermal spraying. One or more sensors (610) are used to capture one or more types of measurements (650) to monitor the thermal spraying process. A processor (710) can analyze a waveform (750) of measurements (650), such as electrical measurements (652). The processor (710) can then initiate a response (770) such as a warning (772) or an automatic adjustment (790) that is triggered by an identified operating condition (800).

Abstract: A process of treating a component includes mechanically removing surface debris from a base coating of the component, identifying at least one surface feature in the base coating, and applying an overlay coating layer over the surface feature of the base coating without stripping off the base coating. A process of treating a gas turbine component includes mechanically removing surface debris from a base coating of the gas turbine component, identifying at least one surface feature in the base coating of corrosion pits, dents, spalls, and combinations thereof, and applying an overlay coating layer over the surface feature of the base coating without stripping off the base coating. A treated gas turbine component includes a gas turbine component substrate and a base coating on the gas turbine component substrate having at least one healed surface feature. The healed surface feature includes an overlay coating layer on the base coating.

Abstract: A screen tensioning device used during fabrication of mask plate includes a screen tensioning machine base and a jig disposed on the screen tensioning machine base, and further includes a magnetic plate positioned above the screen tensioning machine base, and an upwardly-directed vertical suction force acting on the screen of the mask plate to be fabricated by the magnetic plate is equal to an upwardly-directed vertical suction force acting on the screen of the mask plate by a magnetic field system in a vacuum evaporation chamber during evaporation. A screen tensioning method used during fabrication of mask plate is also provided.

Abstract: A mask assembly for thin film deposition and a method of manufacturing the same. The mask assembly includes a glass mask having a first surface and a second surface opposite the first surface, a first metal layer patterned above the first surface of the glass mask, and a second metal layer patterned below the second surface of the glass mask. A plurality of deposition areas are arranged on the glass mask, and a plurality of deposition pattern portions each having a plurality of slits are patterned in the plurality of deposition areas.

Abstract: An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited.

Abstract: The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly includes a two-part magnetic backing plate that includes first and second plate segments, of which at least one is laterally adjustable. Also provided are methods of operating the sputter deposition assembly.

Abstract: A method of manufacturing a copper thin film using a single-crystal copper target, and more particularly, a method of manufacturing a copper thin film using a single-crystal copper target, wherein a copper thin film is deposited on a sapphire disk substrate through high-frequency sputtering using a single-crystal copper target grown through a Czochralski process, and may thus exhibit high quality in terms of crystallinity. The method includes depositing a copper thin film on a sapphire disk substrate through a high-frequency sputtering process using a disk-shaped single-crystal copper target obtained by cutting cylindrical single-crystal copper grown through a Czochralski process.

Abstract: A film forming apparatus includes a chamber that is a container in which a sputter gas is introduced, a carrying unit provided inside the chamber, and circulating and carrying a work-piece on a trajectory of a circular circumference, and a film formation processing unit including a sputter source depositing, on the work-piece circulated and carried by the carrying unit, a film formation material by sputtering to form a film, and a dividing member dividing a film forming position where the film is formed on the work-piece by the sputter source. The dividing member is installed so as to divide the film forming position in a way that, in the trajectory of the circular circumference, a trajectory of passing through a region other than the film forming position performing the film formation is longer than a trajectory of passing through the film forming position performing the film formation.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a carrier having first and second ends extending in a first direction, and third and fourth ends extending in a second direction and being not shorter than the first and second ends. The apparatus further includes a member holder having a magnet placement face on which first and second magnetic-pole portions are placed, the magnet placement face having fifth and sixth ends extending in the first direction and being shorter than the first and second ends, and seventh and eighth ends extending in the second direction, being longer than the fifth and sixth ends, and being longer than the third and fourth ends. The apparatus further includes a carrier transporter transporting the carrier along the first direction. The carrier transporter can transport the carrier such that the third and fourth ends pass under a center line of the magnet placement face.

Abstract: Provided herein are ion-implanted glass based articles with improved flaw suppression properties. The ion-implanted glass based articles generally have a final indent fracture threshold (IFT) load of at least 650 grams, and/or a scratch threshold force of at least 10 N, which represents at least 1.25-fold enhancement compared to the glass based article prior to ion-implantation. Factors affecting the efficacy of the ion implantation process can include the IFT load of the starting glass or glass ceramic substrate (native IFT load), ion type, ion dose, implant energy, beam current, and glass temperature.

Abstract: A reactive heat treatment apparatus is provided to treat a thin-film device. The reactive heat treatment apparatus includes a furnace pipe. The furnace pipe extends in a direction and has a first end and a second end. The furnace pipe further includes a high-temperature portion, a low-temperature portion, and a furnace door. The high-temperature portion is disposed close to the second end and configured to receive the thin-film device. The low-temperature portion is disposed close to the first end and provided with an airtight configuration. The furnace door is disposed close to the first end. An inner side wall of the low-temperature portion has a sunken portion. A height differential is formed between the sunken portion and an inner side wall of the high-temperature portion.

Abstract: A magnesium alloy composite structure includes a magnesium alloy substrate, a zinc layer applied to the magnesium alloy substrate, a copper layer applied to the zinc layer, a nickel strike layer applied to the copper layer; an autocatalytic nickel layer applied to the nickel strike layer and a surface layer applied to the autocatalytic nickel layer. Various surface layers include Aluminum Titanium Nitride, Boron Nitride, Chromium Nitride, Titanium Nitride, Zirconium Nitride, Zirconium Oxide, Zirconium Oxycarbide, Titanium Carbide, Titanium Nitride and Diamond Like Carbon.

Abstract: Embodiments of this disclosure pertain to a coating material comprising silicon and/or aluminum, hydrogen and any two or more of oxygen, nitrogen, carbon, and fluorine. The coating material exhibits a hardness of about 17 GPa or greater and an optical band gap of about 3.5 eV or greater. In some embodiments, the coating material includes, in atomic %, silicon and/or aluminum in an amount of about 40 or greater, hydrogen in an amount in the range from about 1 to about 25, nitrogen in an amount of about 30 or greater, oxygen in an amount in the range from about 0 to about 7.5, and carbon in an amount in the range from about 0 to about 10. The coating material may optionally include fluorine and/or boron. Articles including the coating material are also described and exhibit an average transmittance of about 85% or greater over an optical wavelength regime in the range from about 380 nm to about 720 nm and colorlessness.

Abstract: Described herein is a method of depositing a plasma resistant ceramic coating onto a surface of a chamber component using a non-line-of-sight (NLOS) deposition process, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD). The plasma resistant ceramic coating consists of an erbium containing oxide, an erbium containing oxy-fluoride, or an erbium containing fluoride. Also described are chamber components having a plasma resistant ceramic coating of an erbium containing oxide, an erbium containing oxy-fluoride, or an erbium containing fluoride.

Abstract: An apparatus for processing a substrate may include a chamber, a substrate support, a showerhead structure and a purge ring structure. The purge ring structure may be arranged at an edge portion of the substrate support to inject a deposition-preventing gas, which may be supplied from the substrate support, to an edge portion of an upper surface of the substrate. The purge ring structure may include a purge ring and a plurality of bosses. The purge ring may be configured to surround the substrate. The bosses may be protruded from an inner surface of the purge ring in a radius direction of the substrate to form a gap between the inner surface of the purge ring and the edge portion of the substrate. The deposition-preventing gas may be supplied to the upper surface of the substrate through the gap.

Abstract: An MOCVD system for growing a semiconductor layer on a substrate is provided. The MOCVD system includes an MOCVD growth chamber defined by a jacket having an interior surface and an exterior surface; a water flow chamber surrounding an exterior surface of the jacket of the MOCVD growth chamber; an electronic control system, wherein the electronic control system facilitates pulsed growth of the semiconductor layer; a supply tube comprising a head formed from a hollow structure defining a fitting end and an opposite, shower end, wherein the fitting end has an initial diameter that is less than a diameter at the shower end; and a susceptor configured to hold the substrate and facing the shower end of the supply tube, wherein the MOCVD system operates at a temperature greater than or equal to 1500° C.

Abstract: Provided is a plasma film-firming apparatus including: a chamber configured to accommodate a substrate therein; a substrate pedestal configured to disposed the substrate thereon within the chamber; a gas supply mechanism configured to supply a gas including a film-forming gas into the chamber; an exhaust mechanism configured to exhaust an inside of the chamber; and a plasma generating unit configured to generate plasma in the chamber. The substrate pedestal includes a pedestal body having a smaller diameter than that of the substrate and including a placement surface, and an annular adjustment member disposed outside the pedestal body. The adjustment member is replaceably installed. A plurality of adjustment members having various steps are provided at a position outside the substrate as the adjustment member, and among the plurality of adjustment members, an adjustment member is selected and used according to a processing condition of a plasma processing.

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.