Abstract: The present invention relates to a three-dimensional graphene composite, a preparation method for the same, and a supercapacitor including the same, and more particularly to a three-dimensional graphene composite including at least one electrode material nanoparticle selected from a transition metal hydroxide, a transition metal oxide and a conducting polymer as adsorbed onto the surface of a three-dimensional graphene foam, a preparation method for the three-dimensional graphene composite, and a supercapacitor including the three-dimensional graphene composite.

Abstract: Provided is an aqueous liquid composition including a water-based medium containing water, a polymer having at least one type of groups selected from hydroxyl groups and amino groups, and phosphonobutanetricarboxylic acid. The polymer is at least one polymer selected from the group consisting of a polysaccharide, polyamino acid, polyvinyl alcohol, polyallylamine, polyvinylamine, a polyamidine, a polyethylenimine, and their derivatives.

Abstract: A method for producing an electrode material, provided to involve: (i) a provisional sintering step of sintering a mixed powder containing a powder of a heat resistant element and a powder of Cr to obtain a solid solution where the heat resistant element and Cr are dissolved; (ii) a pulverizing step of pulverizing the solid solution to obtain a powder; (iii) a main sintering step of sintering a molded body obtained by molding the powder of the solid solution, to produce a sintered body; and (iv) a Cu infiltration step of infiltrating the sintered body with Cu.

Abstract: A switch device includes a housing having a case and a holding member, a moving member, a biasing member, a movable contact, a common fixed contact, a first switching fixed contact, a second switching fixed contact, extending portions, at least two terminal members, and resistors for obtaining the resistance value between two terminal members, and fixing portions to which the resistors are soldered. The holding member includes a bottom wall portion that covers the bottom of the case, and a holding wall portion holding the fixing portions. The holding wall portion is formed of a first synthetic resin material having heat resistance, and the bottom wall portion is made of a second synthetic resin material having a heat distortion temperature lower than that of the first synthetic resin material. A method for manufacturing a switch device includes a first molding step, a resistor mounting step, and a second molding step.

Abstract: A position lock and position shift controlling mechanism for a multi-position shifting switch includes a position lock and position shift assembly and a controlling assembly to control the locking of the position lock and position shift assembly. The position lock assembly includes a locked body, a moving body and a housing body. The locked body includes a roundel pedestal which rotates synchronously with a switching shaft, a lock tooth component rotatably attached with the roundel pedestal, and an inner core component. The lock tooth component includes evenly distributed location teeth and plural radial slots. The moving body locks the lock tooth component and pushes the inner core component away from the lock tooth component. The switching shaft actuates the roundel pedestal to rotate a preset angle about the lock tooth component to shift the multi-position shifting switch to a stop control mode position from an automation control mode position.

Abstract: A key structure includes a base plate, a position-limiting structure, a stabilizer bar and a keycap. The position-limiting structure is connected with and fixed on the base plate. A slot is defined by the position-limiting structure and the base plate. The stabilizer bar is connected with the keycap and pivotally coupled to the slot. The position-limiting structure includes a top stopper. The top stopper is made of soft material. As the stabilizer bar is rotated and the stabilizer bar is contacted with the top stopper, the efficacy of reducing noise is enhanced.

Abstract: A keyboard device includes a key structure, a switch circuit board, a base plate and a buffering element. The key structure includes a keycap and a stabilizer bar. The stabilizer bar is connected with the keycap. The base plate includes a connecting structure. The stabilizer bar is penetrated through the connecting structure and connected with the base plate. The buffering element is coupled with the connecting structure. The stabilizer bar and the base plate are made of metallic material. Since the stabilizer bar and the base plate are separated by the buffering element, the keyboard device is capable of reducing noise.

Abstract: A keyswitch uses a magnetic attraction force produced between and by a fixed part, fixedly disposed relative to a base, and a movable part, movably disposed relative to the base, as a driving force for returning a keycap to its original position. The movable part is between the fixed part and the base. The keyswitch also uses a force transmission part disposed between the keycap and the movable part as an intermediate for transferring force from the keycap to the movable part. When a force for pressing the keycap downward overcomes the magnetic attraction force, the movable part moves toward the base and then triggers a switch.

Abstract: A keyboard device includes a key structure, a base plate and a soft fixing element. The key structure includes a keycap and a stabilizer bar. The stabilizer bar is connected with the keycap and the soft fixing element. The soft fixing element is disposed on the base plate. The soft fixing element has an accommodation space. The stabilizer bar is inserted into the accommodation space, so that the stabilizer bar is connected with the base plate. After a fixing post of the soft fixing element is penetrated through a fixing hole of the base plate, the fixing post is thermally treated to form the hot melt fixing structure. Consequently, the soft fixing element is firmly fixed on the base plate. Since the metallic stabilizer bar and the metallic base plate are separated by the soft fixing element, the keyboard device is capable of reducing noise.

Abstract: The present invention relates to a key connecting module for triggering a switch circuit board, where the key connecting module includes a frame having a support structure, and a triggering assembly, and the triggering assembly is accommodated in the support structure and is moveable relative to the frame to trigger the switch circuit board. The triggering assembly includes a first combining part corresponding to a first keycap and a second combining part corresponding to a second keycap. When the key connecting module is connected to the first keycap, the first keycap is combined with the first combining part. When the key connecting module is connected to the second keycap, the second keycap is combined with the second combining part.

Abstract: A keyboard includes a base plate, a pressure sensing layer, plural key structures, a circuit board, a flexible layer and a controlling unit. The pressure sensing layer is disposed on the base plate and located under the circuit board. The flexible layer is disposed on the pressure sensing layer and located under the circuit board. While a key structure is depressed, a part of the key structure is penetrated through the circuit board to press the flexible layer, and a force is transmitted from the flexible layer to the pressure sensing layer. The controlling unit compares the force with a predetermined force value. According to the comparing result, the controlling unit generates a corresponding pressure sensing signal. Consequently, the use of a single key structure can achieve the functions of multiple keys.

Abstract: Disclosed systems provide keyboard backlighting from organic light emitting diodes (OLEDs) placed under the keys. A keyboard stack optionally includes a light guide or reflector. A single OLED can illuminate multiple keys through a light guide. OLEDs used for backlighting may be arranged in a strip to illuminate more than one key. OLEDs can be deposited directly to the light guide or reflector, and can include a seal to promote air stability.

Abstract: Systems and methods are disclosed that may be implemented to provide keycap lighting to a spring loaded mechanical key switch assembly using a light conductive structure, such as a light pipe, and without requiring a chassis housing of the mechanical key switch assembly to include a dedicated power-consuming light source mounted to or otherwise positioned at the location of the individual key switch assembly chassis housing. Additionally, the disclosed systems and methods may be implemented to use one or more common power-consuming light source/s to simultaneously provide key cap lighting to multiple such spring loaded mechanical key switch assemblies, for example, by feeding light to each key cap though a common light spreader and through an individual non-power consuming light pipe provided for each key switch assembly.

Abstract: A light switch cover for converting a standard toggle switch into a remote-controlled toggle switch.

Abstract: A switch device includes an operation part, a first push mechanism that, by a rotation operation of the operation part, selects and activates a first push switch part, a second push mechanism that, by a tilt operation of the operation part, activates a second push switch part, a circuit board including the first push switch part and the second push switch part mounted thereto, and a contact rubber interposed between the circuit board and the first and second push mechanisms. The contact rubber includes contacts corresponding to the first push switch part and the second push switch part and is configured such that the contacts contact with or separate from the corresponding switch parts by a movement of the first push mechanism and the second push mechanism. The contact rubber is formed so as to cover an entire upper surface of the circuit board.

Abstract: A method for controlling a power switching apparatus to solve problems including: setting a target time reaching a predetermined position immediately before a target phase by a time calculator during an opening and closing operation of a movable arc contact with respect to a fixed arc contact in a target phase at a predetermined average switching speed; and controlling an electric motor at a speed equal to or less than an average switching speed immediately before the target phase from an operation start time to the target time by a motor controller.

Abstract: The present invention provides a protection device which provides a greater degree of freedom in a disposition of the bimetal switch as well as be able to more accurately control an actuation of the bimetal member of the bimetal switch. The protection device characterized in that the device comprises a bimetal switch wherein a first PTC member and a bimetal member are connected electrically in parallel with each other; and a second PTC member; and the bimetal member is disposed to be actuated by tripping of the second PTC member.

Abstract: A relay system is provided which is designed to avoid flow of inrush current through a capacitor in a pre-charge mode wherein the capacitor is pre-charged. The relay system includes a pair of power lines, a capacitor, a series-connected assembly, a control circuit, and a relay module. The relay module includes two main switches, a main coil, and a sub-coil. In the pre-charge mode, the control circuit energizes both the main and sub-coils to turn on only one of the main switches. Before entering the pre-charge mode, the control circuit diagnoses the sub-coil. When the sub-coil is determined as being malfunctioning, the control circuit inhibits the pre-charge mode from being entered.

Abstract: An electromagnetic relay includes an electromagnet unit, a contact unit including a movable contact spring with a movable contact provided thereon and a fixed contact spring with a fixed contact provided thereon, and a base block configured to support the electromagnet unit and the contact unit, wherein the electromagnet unit is supported at a first face of the base block, and the contact unit is supported at a second face of the base block facing in an opposite direction from the first face, and wherein the base block includes a first insulating wall extending from the first face alongside the electromagnet unit and a second insulating wall extending from the second face alongside the contact unit, the second insulating wall being situated on an opposite side from the first insulating wall across the second face.

Abstract: An apparatus is provided for generating X-ray radiation in an outer magnetic field, which may be generated by a magnetic field device. The apparatus includes a cathode configured to generate an electron beam and an anode configured to retard the electrons of the electron beam and generate an X-ray beam. The apparatus further includes a device configured to generate an electric field orientated from the anode in the direction of the cathode and substantially collinear to the outer magnetic field, wherein the cathode, as an electron emitter, includes a cold cathode that passively provides free electrons by field emission.

Abstract: The invention relates to a semi-transparent photocathode (1) for a photon detector having an increased absorption rate for a preserved transport rate. According to the invention, the photocathode (1) includes a transmission diffraction grating (30) able to diffract said photons and provided in the support layer (10) on which the photoemissive layer (20) is deposited.

Abstract: Microplasma generators and associated arrays and methods are described herein. Certain embodiments relate to a microplasma generator in which an elongated semiconductor structure can control electronic current supplied to a microplasma cavity. In certain cases, the microplasma generator can be configured to generate a microplasma when a voltage is applied across the elongated semiconductor structure. Some embodiments include particular spatial arrangements between the electrode(s), the elongated semiconductor structure, and/or the microplasma cavity.

Abstract: A charged-particle-beam device used for measuring the dimensions, etc., of fine circuit patterns in a semiconductor manufacturing process, wherein corrections are made in the defocusing and astigmatism generated during changes in the operating conditions of a Wien filter acting as a deflector of secondary signals such as secondary electrons, and the display dimensions of obtained images are kept constant. In the charged-particle-beam device, the Wien filter (23) is arranged between a detector and a lens (11) arranged on the test-sample side among two stages of lenses for converging a charged-particle beam, and a computing device (93) is provided for the interlocked control of the Wien filter (23) and a lens (12) arranged on the charged-particle-source side among the two stages of lenses.

Abstract: An electron beam irradiation device includes a stage, a main body unit, and a first mechanism. The main body unit includes a substrate, first members, and a first layer. The first members are arranged to be separated in a second direction intersecting a first direction and is provided at a first surface of the substrate opposing the stage. The first layer is provided between the stage and the first members and between the stage and the substrate. The first layer converts a light ray into an electron beam. The first mechanism is provided in the stage and moves the stage in the second direction. A distance of the movement is not less than a spacing between a center in the second direction of the first member and a center in the second direction of one other first member adjacent to the first member.

Abstract: A device for measuring electron orbital angular momentum states in an electron microscope includes the following components aligned sequentially in the following order along an electron beam axis: a phase unwrapper (U) that is a first electrostatic refractive optical element comprising an electrode and a conductive plate, where the electrode is aligned perpendicular to the conductive plate; a first electron lens system (L1); a phase corrector (C) that is a second electrostatic refractive optical element comprising an array of electrodes with alternating electrostatic bias; and a second electron lens system (L2). The phase unwrapper may be a needle electrode or knife edge electrode.

Abstract: Systems and methods for determining a fault in a gas heater channel are described. One of the methods includes receiving measured parameters associated with a plurality of heater elements of the gas heater channel. The gas heater channel transfers one or more gases from a gas supply to a plasma chamber. The method further includes calculating a measured parallel resistance of the plurality of heater elements from the measured parameters, comparing the measured parallel resistance to an ideal parallel resistance of the heater elements of the gas heater channel, and determining based on the comparison that a portion of the gas heater channel is inoperational. The method includes selecting an identity of one of the heater elements from a correspondence between a plurality of identities of the heater elements and the measured parallel resistance.

Abstract: In accordance with an embodiment, a signal processing method includes scanning a pattern on a substrate with a charged particle beam, detecting secondary charged particles emitted from the substrate by using a detector, outputting a signal, and filtering the signal. The detector is separated or divided into a plurality of regions, and the secondary charged particles are detected separately in each region of the detector. Intensity of the filtering is defined in dependence on a function f(?) of an angle ? between a reference axis and a direction along which the secondary charged particles enter a detector plane. The reference axis is an arbitrary direction in a plane parallel to a surface of the substrate.

Abstract: Provided are a plasma generation apparatus and a plasma generation method. The plasma generation apparatus includes a chamber including a dielectric window and a toroidal discharge space, a magnetic core disposed to surround a portion of the chamber, an induction coil disposed to wind the magnetic core, and a waveguide radiating a microwave through the dielectric window. Alternating current flowing in the induction coil forms a magnetic flux at the magnetic core, and the magnetic flux generates inductively-coupled plasma. A microwave propagating along the waveguide generates microwave plasma inside the chamber.

Abstract: A includes arranging a substrate in a working region of a first particle beam column and a second particle beam column; producing a desired target structure on the substrate by directing a first particle beam generated by the first particle beam column at a multiplicity of sites of the substrate to deposit material thereon or to remove material therefrom; repeatedly interrupting the production of the desired target structure and producing a marking on the substrate by directing the first particle beam onto the substrate and continuing the production of the desired target structure; and capturing positions of the markings on the substrate by directing a second particle beam produced by the second particle beam column onto the markings on the substrate, and detecting particles or radiation which are produced in the process by the second particle beam on the substrate.

Abstract: The present disclosure provides one embodiment of a method that includes slicing a first sub-polygon out of the pattern layout and writing the first sub-polygon onto the substrate using a beam with a first beam setting that is associated with the first sub-polygon. The method additional includes slicing a second sub-polygon out of the remaining pattern layout that does not include the first sub-polygon. The second sub-polygon interfaces with the first sub-polygon on at least one edge. Also, the method includes, without turning off the beam after writing the first sub-polygon onto the substrate, writing the second sub-polygon onto the substrate with a second beam setting that is associated with the second sub-polygon.

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.

Abstract: Systems and methods for impedance-based adjustment of power and frequency are described. A system includes a plasma chamber for containing plasma. The plasma chamber includes an electrode. The system includes a driver and amplifier coupled to the plasma chamber for providing a radio frequency (RF) signal to the electrode. The driver and amplifier is coupled to the plasma chamber via a transmission line. The system further includes a selector coupled to the driver and amplifier, a first auto frequency control (AFC) coupled to the selector, and a second AFC coupled to the selector. The selector is configured to select the first AFC or the second AFC based on values of current and voltage sensed on the transmission line.

Abstract: In a plasma processing method in which multiple cycles, each of which includes a first stage of generating plasma of a first processing gas containing a first gas and a second stage of generating plasma of a second processing gas containing the first gas and a second gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first gas and the second gas in the second stage is specified from a function or a table. The output of the second gas is begun prior to the start time point of the second stage by a time difference set based on the delay time.

Abstract: Plasma gas is ejected from inner gas ejection ports that are formed in a downstream side housing, and nitrogen gas is supplied as protective gas to a protective gas source between a housing and a cover section. Nitrogen gas is sucked in accompanying exhaust from inner gas ejection ports of plasma gas, and is ejected from the outer gas ejection ports. In this case, since a layer of nitrogen gas is formed in the periphery of plasma gas, it is possible to make it difficult to bring the plasma gas into contact with air, and it is possible to make it difficult to react a reactive species such as a radical in the plasma gas, oxygen in the air, and the like.

Abstract: Provided is a RF sputtering apparatus in which film forming can efficiently be made by suppressing an amount of reverse sputtering at a substrate. The RF sputtering apparatus SM, according to this invention, in which RF power is applied in vacuum to a target to thereby perform film forming processing on one surface (Wa) of the substrate (W) is provided with a stage for holding the substrate in a state in which one surface thereof is left open in an electrically insulated state. The stage has a dented portion on such a holding surface as is adapted to hold thereon the substrate. A movable body, which is movable toward, and away from, the substrate, and is connected to grounding is disposed in a space defined by such an opposite surface of the substrate as is opposite to said one surface and an outline of the dented portion.

Abstract: The present invention generally relates to a ring assembly that may be used in an etching or other plasma processing chamber. The ring assembly generally includes an inner ring body having a top planar surface and a bottom planar surface, and an outer ring body having a top surface, a bottom surface substantially parallel to the top surface, and an inside surface that extends between the top surface and the bottom surface, the inside surface having a roof covering a portion of the inner ring body when the inner ring body is disposed adjacent the roof, wherein the inner ring body can be flipped into a different position so that a portion of the inner ring body that is not covered by the roof provides a substantially planar surface.

Abstract: Disclosed are an apparatus and a method for saving energy while increasing the conveying speed in vacuum coating plants consisting of a series of sputtering segments (3) and gas separation segments (2) along with a continuous substrate plane (1).

Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion; a target disposed on the central portion; a plurality of recesses formed in the support portion; and a plurality of pads partially disposed in the plurality of recesses.

Abstract: The invention relates to a sputtering target containing a sputtering material containing a metal oxide. The sputtering material contains zirconium and titanium as metals and contains at least one mixed oxide phase.

Abstract: Embodiments of the present disclosure include methods and apparatus for controlling titanium-tungsten (TiW) target nodule formation. In some embodiments, a target includes: a source material comprising predominantly titanium (Ti) and tungsten (W), formed from a mixture of titanium powder and tungsten powder, wherein a grain size of a predominant quantity of the titanium powder is less than or equal to a grain size of a predominant quantity of the tungsten powder.

Abstract: In some implementations described herein, a collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.

Abstract: A cold-atom cell is formed by machining a block of silicon to define sites for an atom source chamber, an atom manipulation chamber, and an ion-pump chamber. A polished silicon panel is frit-bonded to an unpolished (due to machining) chamber wall (which would be difficult and costly to polish). The polished panel can then serve as a reflector or a sight for anodic bonding. A solid-phase atom source provides for vapor phase atoms in the source chamber. The source chamber also includes carbon and gold to regulate the atom pressure by sorbing and desorbing thermal atoms. The atom manipulation chamber includes components for magneto-optical trap and an atom chip, e.g., for forming a Bose-Einstein condensate. The ion-pump chamber serves as the site for an ion pump. By integrating the ion pump into the body of the cold-atom cell, a more compact, reliable, and robust cold-atom cell is achieved.

Abstract: An ultra-high vacuum (UHV) system includes a UHV cell and an ion pump to maintain the UHV in the UHV cell. The ion pump has a GCC (glass, ceramic, or crystalline) housing. An interior wall of the ion-pump housing serves as an anode or bears a coating that serves as an anode. At least one cathode is disposed with respect to the housing so that it can cooperate with the anode to form an electric field for establishing a Penning trap. The GCC housing defines a flow channel that extends radially through the anode so that a molecule can flow directly into the most ionizing region of a Penning trap.

Abstract: A method and corresponding apparatus are disclosed for analysis of a peptide-containing sample. The sample is prepared by adding isotopically-labeled peptides corresponding to endogenous peptides of interest, and the prepared sample is analyzed by liquid chromatography-mass spectrometry (LCMS). Detection in a high-resolution, accurate mass (HRAM) MS1 spectrum of a precursor ion matching an isotopically-labeled peptide triggers acquisition of an MS/MS spectrum (preferably acquired in an ion trap or other fast mass analyzer) to determine if a product ion is present matching a characteristic product ion (e.g., the y1 ion) of the isotopically-labeled peptide. If the characteristic product ion is present, then a HRAM MS/MS spectrum is acquired for detection and quantitation of the corresponding endogenous peptide.

Abstract: The invention generally relates to systems and methods for analyzing a sample from a surface. In certain aspects, the invention provides systems that include a sample introduction member that has an inlet, an outlet, and an opening along a wall of the sample introduction member. The sample introduction member may be configured such that the opening couples with a surface that includes a sample in a manner in which molecules of the sample enter the sample introduction member via the opening and exit the sample introduction member via the outlet. A mass spectrometer is configured to receive the molecules of the sample.

Abstract: The present invention is directed to a method and device to desorb an analyte using heat to allow desorption of the analyte molecules, where the desorbed analyte molecules are ionized with ambient temperature ionizing species. In various embodiments of the invention a current is passed through a mesh upon which the analyte molecules are present. The current heats the mesh and results in desorption of the analyte molecules which then interact with gas phase metastable neutral molecules or atoms to form analyte ions characteristic of the analyte molecules.

Abstract: A method for the surface treatment of a substrate surface of a substrate with the following steps: arrangement of the substrate surface in a process chamber, bombardment of the substrate surface with an ion beam, generated by an ion beam source and aimed at the substrate surface, to remove impurities from the substrate surface, whereby the ion beam has a first component, introduction of a second component into the process chamber to bind the removed impurities. A device for the surface treatment of a substrate surface of a substrate with: a process chamber for receiving the substrate, an ion beam source for generating an ion beam that has a first component and is aimed at the substrate surface to remove impurities from the substrate surface, means to introduce a second component into the process chamber to bind the removed impurities.

Abstract: In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a compo

Abstract: Provided herein are methods of forming thin films. In some embodiments, to form a thin film, a precursor adsorption layer including an organic ligand is formed by supplying a precursor including a metal or silicon central atom, and the organic ligand onto a lower structure. An intermediate result layer is formed by supplying a non-oxidant onto the precursor adsorption layer. In forming the intermediate result layer, the organic ligand included in the precursor adsorption layer is substituted with a substituent. An oxide film including the central atom is formed from the intermediate result layer by supplying an oxidant onto the intermediate result layer.

Abstract: A method of filling recesses or grooves on a patterned surface with a layer of film, by combining depositing a film by PEALD/PPECVD on the patterned surface and etching the film, wherein the deposition and the etching are separately controlled, and wherein the conditions for deposition can be controlled by controlling RF power.