Abstract: A thermoelectric converter includes a battery box, an outer box and a connecting ring. The battery box has a bottom case, a battery disposed in the bottom case, a battery circuit board electrically connected to the battery, and an application circuit board disposed at one end of the bottom case. The outer box has a heat sink surrounding and covering the battery box, a thermoelectric module electrically connected to the battery circuit board with the thermoelectric module electrically connected to the battery through the battery circuit board, a heat conducting plate overlying the thermoelectric module and configured to conduct thermal energy from ambient environment to the thermoelectric module for the thermoelectric module to absorb the thermal energy and convert the thermal energy to electricity, and a non-metal adiabatic frame surrounding the thermoelectric module and configured to prevent the thermal energy from being dissipated to the ambient environment.

Abstract: A plurality of p-type and n-type thermoelectric conversion layers extend between opposed heat absorption and heat release surfaces such that the layers alternate between the p-type and n-type thermoelectric conversion layers with a respective insulating layer located between each adjacent pair of thermoelectric conversion layers. Each of the insulating layers extends from a respective one of the heat absorption and heat release surfaces towards, but does not reach, the other of the heat absorption and heat release surfaces such that each insulating later is spaced from the other of the heat absorption and heat release surfaces by a respective length. First and second outer sets of insulating layers are located closest to the first and second end surfaces, respectively, The insulating layers of the first and second outer sets are spaced from the other of the heat absorption and heat release surfaces by a length which is longer than the insulating layers located inwardly of the first and second outer sets.

Abstract: A piezoelectric actuator includes a piezoelectric element that includes a piezoelectric unit including a ferroelectric, which has an asymmetric bipolar P-E curve, a capacitor connected to the piezoelectric unit in series, and a resistor connected to the capacitor in series and connected to the ferroelectric in parallel; and a drive unit that inputs a drive waveform Vd, which includes a DC offset component of which polarity is opposite to polarization of the ferroelectric, to the piezoelectric element to drive the piezoelectric element. A value of a coercive electric field Ec1, a value of a coercive electric field Ec2, the capacitance Cs of the capacitor, the capacitance Cpz of the ferroelectric, combined resistance Rp of the resistance of the resistor and the resistance of the ferroelectric, and a fundamental angular frequency ? of the drive waveform satisfy Expressions I to III, wherein 1 / 3 ? ? Ec 1 + Ec 2 ? / ? Ec 1 - Ec 2 ? Expression ? ? I C s ? 1.

Abstract: A piezoelectric actuator with integrated features to provide coarse position adjustment of a pushing threaded rod and also mechanically amplified piezo motion for fine position adjustment is presented here in three design variants. The mechanical amplifier houses one or more piezo stacks in longitudinal axis with preload to translate an amplified motion in the order of a few times in the transverse axis, perpendicular to the piezo stack motion. The piezo amplifier output travel is transmitted to the threaded rod with a ball at the end to push a desired surface for position adjustments and motion translation in application such as a mirror mount.

Abstract: A high frequency magnetostrictive transducer includes a magnetostrictive rod or wire inserted co-axially into a driving coil, wherein the driving coil includes a coil arrangement with a plurality of small coil segments along the magnetostrictive rod or wire; wherein frequency operation of the high frequency magnetostrictive transducer is controlled by a length of the small coil segments and a material type of the magnetostrictive rod or wire. This design of the high frequency magnetostrictive transducer retains the beneficial aspects of the magnetostrictive design, while reducing its primary drawback, lower frequency operation.

Abstract: A piezoelectric polymer composite material includes piezoelectric particles dispersed in a matrix made from a polymer material. The piezoelectric particles is composed primarily of lead zirconate titanate having a general formula of Pb(ZrxTi1?x)O3 and each of the piezoelectric particles contains a mixture of tetragonal crystals and rhombohedral crystals.

Abstract: The present invention provides a piezoelectric material not containing lead and potassium, showing satisfactory insulation and piezoelectricity, and having a high Curie temperature. The invention relates to a piezoelectric material includes a main component containing a perovskite-type metal oxide represented by Formula (1): (NaxBa1-y)(NbyTi1-y)O3 (wherein, 0.80?x?0.94 and 0.83?y?0.94), and an additive component containing at least one element selected from Mn and Ni, wherein the content of the Ni is 0 mol or more and 0.05 mol or less based on 1 mol of the perovskite-type metal oxide, and the content of the Mn is 0 mol or more and 0.005 mol or less based on 1 mol of the perovskite-type metal oxide.

Abstract: The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450° C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.

Abstract: A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.

Abstract: A magnetic tunnel junction has a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first magnetic region, a second magnetic region spaced from the first magnetic region, and a third magnetic region spaced from the first and second magnetic regions. A first non-magnetic insulator metal oxide-comprising region is between the first and second magnetic regions. A second non-magnetic insulator metal oxide-comprising region is between the second and third magnetic regions. Other embodiments are disclosed.

Abstract: A method of making a magnetic random access memory device includes forming a magnetic tunnel junction (MTJ) on an electrode, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; disposing a hard mask on the MTJ; etching sidewalls of the hard mask and MTJ to form a stack with a first width and redeposit metal along the MTJ sidewall; depositing a sacrificial dielectric layer on the hard mask, surface of the electrode, exposed sidewall of the hard mask and the MTJ, and on redeposited metal along the sidewall of the MTJ; removing a portion of the sacrificial dielectric layer from sidewalls of the hard mask and MTJ and redeposited metal from the MTJ sidewalls; and removing a portion of a sidewall of the MTJ and hard mask to provide a second width to the stack; wherein the second width is less than the first width.

Abstract: Embodiments are directed to a magnetic tunnel junction (MTJ) memory cell that includes a reference layer formed from a perpendicular magnetic anisotropy (PMA) reference layer and an interfacial reference layer. The MTJ further includes a free layer and a tunnel barrier positioned between the interfacial reference layer and the free layer. The tunnel barrier is configured to enable electrons to tunnel through the tunnel barrier between the interfacial reference layer and the free layer. A first in-situ alignment is provided between a tunnel barrier lattice structure of the tunnel barrier and an interfacial reference layer lattice structure of the interfacial reference layer. A second in-situ alignment is provided between the tunnel barrier lattice structure of the tunnel barrier and a free layer lattice structure of the free layer. The PMA reference layer lattice structure is not aligned with the interfacial reference layer lattice structure.

Abstract: A resistive random-access memory structure and a method for fabricating a resistive random-access memory structure are described. A first dielectric layer is formed on a substrate. A plurality of bottom electrodes are independently embedded in the first dielectric layer. A transition metal oxide layer covers the plurality of bottom electrodes and extends onto a portion of the first dielectric layer. The minimum distance between the bottom electrode and a sidewall of the transition metal oxide layer is a first distance. The first distance is in a range of 10 nm to 200 ?m. A top electrode is formed on the transition metal oxide layer.

Abstract: A method of manufacturing a switching element includes forming a first electrode layer over a substrate, forming a switching structure on the first electrode layer, and forming a second electrode layer on the switching structure. The switching structure includes a plurality of unit switching layers that includes a first unit switching layer and a second unit switching layer. Forming the first unit switching layer includes forming a first unit insulation layer, and injecting first dopants into the first unit insulation layer by performing a first ion implantation process. Forming the second unit switching layer includes forming a second unit insulation layer, and injecting second dopants into the second unit insulation layer by performing a second implantation process.

Abstract: A method for producing an organic semiconductor film includes performing, in random order, applying an ink including an organic semiconductor, a first solvent having high affinity for the organic semiconductor, and a second solvent having lower affinity for the organic semiconductor than the first solvent and having a higher boiling point than the first solvent, to a lyophilic region of a substrate having at least one of a lyophilic region or a liquid repellent region disposed in the vicinity of the lyophilic region on a surface, and applying a solvent composed of the same type of solvent as the first solvent and used for controlling a volatilization rate of the first solvent in the ink applied to the lyophilic or the liquid repellant region; and then causing the first and second solvent in the ink applied to the lyophilic region to volatilize to produce an organic semiconductor film.

Abstract: A method of forming a n-doped semiconductor layer wherein a film comprising an organic semiconductor and an n-dopant reagent is irradiated by light having a wavelength that is within an absorption range of the organic semiconductor, and wherein an absorption maximum wavelength of the n-dopant precursor is shorter than any peak wavelength of the light. The n-doped semiconductor layer may be an electron-injection layer of an organic light-emitting device.

Abstract: Embodiments of forming an image sensor with an organic photodiode are provided. The organic photodiode uses dual electron-blocking layers formed next to the anode of the organic photodiode to reduce dark current. By using dual electron-blocking layers, the values of highest occupied molecular orbital (HOMO) for the neighboring anode layer and the organic electron-blocking layer are matched by one of the dual electron-blocking layers to form a photodiode with good performance. The values of the lowest occupied molecular orbital (LOMOs) of the dual electron-blocking layers are selected to be lower than the neighboring anode layer to reduce dark current.

Abstract: A method for making thin film transistor includes: providing a gate electrode and forming an insulating layer on the gate electrode; providing a carbon nanotube film comprising a plurality of metallic carbon nanotubes and a plurality of semiconducting carbon nanotubes; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope to take photo of the carbon nanotube film to distinguish the plurality of metallic carbon nanotubes and the plurality of semiconducting carbon nanotubes; removing the metallic carbon nanotubes, and forming a source electrode and a drain electrode on a surface of the semiconducting layer.

Abstract: An electronic device, including an organic semiconductor, the organic semiconductor having a first polymer having a first molecular weight and a first length, and a second polymer having a second molecular weight and a second length, wherein the second length is longer than the first length.

Abstract: Provided are an organic electroluminescence device which has a high luminous efficiency, a low operating voltage and a long life and which is low in a voltage rise in operation and excellent in an ageing stability and has an aptitude in production by the wet process, and a lighting equipment and a display device which are prepared by using the same.

Abstract: The present specification provides a compound having a spiro structure of Chemical Formula 1, and an organic light emitting device including the same.

Abstract: An organic electroluminescence device having a layer of an organic light emitting medium which comprises (A) a specific arylamine compound and (B) at least one compound selected from specific anthracene derivatives, spirofluorene derivatives, compounds having condensed rings and metal complex compounds and is disposed between a pair of electrodes and an organic light emitting medium comprising the above components (A) and (B) are provided. The organic electroluminescence device exhibits a high purity of color, has excellent heat resistance and a long life and efficiently emits bluish to yellowish light. The organic light emitting medium can be advantageously used for the organic electroluminescence device.

Abstract: An arylamine-based compound is represented by Formula 1 below. The arylamine-based compound is included in an organic light emitting diode.

Abstract: An organic electroluminescent device including: an anode, a cathode, an emitting layer formed of an organic compound and interposed between the cathode and the anode, and two or more layers provided in a hole-injecting/hole-transporting region between the anode and the emitting layer; of the layers which are provided in the hole-injecting/hole-transporting region, a layer which is in contact with the emitting layer containing a compound represented by the formula (1); and of the layers which are provided in the hole-injecting/hole-transporting region, a layer which is interposed between the anode and the layer which is in contact with the emitting layer containing an amine derivative represented by the formula (2).

Abstract: An organic light-emitting device having low-driving voltage, improved efficiency, and long lifespan includes: a first electrode; a second electrode facing the first electrode; a first layer between the first electrode and the second electrode, the first layer including a first compound; a second layer between the first layer and the second electrode, the second layer including a second compound; and a third layer between the second layer and the second electrode, the third layer including a third compound; wherein the first compound does not include a nitrogen-containing heterocyclic group comprising *?N—*? as a ring forming moiety, and wherein the first compound, the second compound, and the third compound each independently include at least one group selected from groups represented by Formulae A to C:

Abstract: A compound is represented by Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device include the compound. In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: The present invention provides an organic electroluminescent element which comprises: an anode; a cathode; and an organic layer interposed between the anode and the cathodes, wherein the organic layer comprises one or more types of layer from the group consisting of a hole-injection layer, hole-transport layer, light-emitting layer, lifetime enhancement layer, electron-transport layer, and electron-injection layer.

Abstract: A compound represented by the following formula (1). In the formula (1), when Ar1 and Ar2 are the same substituents, as for all of the following pairs: Y1 and Y12, Y2 and Y11, Y3 and Y10, Y4 and Y9, Y5 and Y8, and Y6 and Y7, Y1 to Y12 of each pair are not the same as each other.

Abstract: A condensed cyclic compound represented by Formula 1: wherein in Formula 1, groups L1 and X1 to X16 are the same as described in the specification.

Abstract: Provided is an organic light emitting element that has high moisture resistance, is driven at a low voltage, has high efficiency, and has a long lifetime. Specifically, provided is an organic light emitting element, including: an anode; a cathode; and an organic compound layer arranged between the anode and the cathode, in which: the organic compound layer includes an organic functional layer; and the organic functional layer contains an organic compound represented by the following general formula [1].

Abstract: A condensed cyclic compound represented by Formula 1: Ar1-L1-L2-Ar2??Formula 1 wherein in Formula 1, Ar1, Ar2, L1, and L2 are the same as described in the specification.

Abstract: Provided is a novel heterocyclic compound which can be used for a light-emitting element, as a host material of a light-emitting layer in which a light-emitting substance is dispersed. A heterocyclic compound represented by a general formula (G1) is provided. In the formula, A represents any of a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted dibenzofuranyl group, and a substituted or unsubstituted carbazolyl group, R11 to R19 separately represent any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, and Ar represents a substituted or unsubstituted arylene group having 6 to 13 carbon atoms.

Abstract: To provide a novel compound which can be used as a host material in which a light-emitting substance is dispersed. To provide a light-emitting element having a long lifetime. A compound represented by General Formula (G0). In the formula, A1 represents a dibenzo[f,h]quinoxalinyl group, A2 represents a benzo[b]naphtho[2,3-d]furanyl group, and Ar represents an arylene group having 6 to 25 carbon atoms. The dibenzo[f,h]quinoxalinyl group, the benzo[b]naphtho[2,3-d]furanyl group, and the arylene group are separately unsubstituted or substituted by any one of an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 13 carbon atoms.

Abstract: Provided is an organic light-emitting device improved in emission efficiency and lifetime. The organic light-emitting device includes a pair of electrodes and an organic compound layer disposed between the pair of electrodes, in which: the organic compound layer includes a benzo[f]isoquinoline iridium complex of a specific structure and a hydrocarbon compound of a specific structure; and the hydrocarbon compound is a compound formed only of an SP2 carbon atom and a hydrogen atom.

Abstract: A novel organometallic complex having high heat resistance is provided. The organometallic complex, which includes a structure represented by General Formula (G1), includes iridium and a ligand. The ligand has a pyrazine skeleton. Iridium is bonded to nitrogen at the 1-position of the pyrazine skeleton. A phenyl group that has an alkyl group as a substituent is bonded at each of the 2- and 3-positions of the pyrazine skeleton, and a phenyl group that has a cyano group as a substituent is bonded at the 5-position of the pyrazine skeleton. The ortho position of the phenyl group bonded at the 2-position of the pyrazine skeleton is bonded to iridium. In the formula, each of A1 to A4 independently represents a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.

Abstract: Provided are a monoamine derivative represented by the following Formula 1, and an organic electroluminescent device including the same. When the monoamine derivative represented by Formula 1 is used as a hole transport or hole injection material in the device, the operating voltage may be lowered and the emission efficiency may be improved.

Abstract: The present invention relates to a substrate for a photoelectric device and a photoelectric device comprising the same and, more specifically, to a substrate for a photoelectric device and a photoelectric device comprising the same capable of guaranteeing the flatness of thin-films forming the photoelectric device and the structural stability of a functional thin-film formed to improve the characteristics of the photoelectric device, thereby maintaining the function of the functional thin-film. To this end, the present invention provides a substrate for a photoelectric device and a photoelectric device comprising the same, the substrate comprising: a base substrate; a concave-convex structure formed on the base substrate, in which the surface of the concave-convex structure forms a concave-convex pattern; and a planarization layer formed on the concave-convex structure, the planarization layer being formed of a 2-dimensional material.

Abstract: The present invention provides a stripping method of a flexible substrate, comprising: providing a porous metal substrate; forming a buffer layer on the porous metal substrate; forming a flexible substrate on the buffer layer; putting the flexible substrate in the electrolytic tank so that the part of the porous metal substrate is immersed in the electrolyte, and the porous metal substrate is employed to be a cathode electrified to electrolyze water in the electrolyte, and the porous metal substrate will releases the hydrogen, and the flexible substrate and the buffer layer are stripped from the porous metal substrate with the acting force of the hydrogen to obtain the flexible substrate with the buffer layer at the bottom. The method is high efficient and without damaging to promote the production yield of the flexible substrate.

Abstract: Disclosed herein is an organic light-emitting display device having a first flexible substrate; a second flexible substrate; a plurality of organic light-emitting pixels on the first flexible substrate and between the first flexible substrate and the second flexible substrate; an encapsulation unit covering the pixels; and an adhesive layer on the encapsulation unit. The Young's modulus of the adhesive layer is equal to or larger than a value so that the first flexible substrate is not deformed by bending stress when it is rolled up.

Abstract: In an organic light emitting diode (OLED) display device and a method for fabricating the same, OLED pixels are patterned through a photolithography process, so a large area patterning can be performed and a fine pitch can be obtained, and an organic compound layer can be protected by forming a buffer layer of a metal oxide on an upper portion of the organic compound layer or patterning the organic compound layer by using a cathode as a mask, improving device efficiency. In addition, among red, green, and blue pixels, two pixels are patterned through a lift-off process and the other remaining one is deposited to be formed without patterning, the process can be simplified and efficiency can be increased.

Abstract: The present disclosure provides a color filter substrate used in an organic light-emitting diode (OLED) or liquid crystal (LC) display structure for improving a contrast ratio and light output. The color filter substrate includes a substrate; a color filter layer comprising a plurality of pixel units; and a reflective metallic matrix comprising a plurality of reflective metallic matrix elements surrounding each pixel unit.

Abstract: The invention provides a quantum dot light emitting device and a manufacturing method thereof and further a liquid crystal display device. The quantum dot light emitting device includes an anode and a cathode disposed opposite to and spaced from each other, and further a hole injection layer, a first hole transport layer, a first quantum dot light emitting layer, a charge generation layer, a second quantum dot light emitting layer, a first electron transport layer and an electron injection layer sequentially stacked between the anode and the cathode in that order. The charge generation layer includes sequentially-disposed a second electron transport layer, a carrier generation layer and a second hole transport layer in that order. The first quantum dot light emitting layer emits a first light, the second quantum dot light emitting layer emits a second light, and the second electron transport layer includes a water/alcohol-soluble polymer.

Abstract: Disclosed is a white organic light emitting device for enhancing emission efficiency and a color viewing angle or a color reproduction rate. The white organic light emitting device includes a first emission part between a first electrode and a second electrode, the first emission part having a first emission layer, a second emission part on the first emission part, the second emission part having a second emission layer, and a third emission part on the second emission part, the third emission part having a third emission layer. At least two emission layers of the first to third emission layers emit lights having a same color to enhance emission efficiency and a color viewing angle, and the at least two emission layers are adjacent to each other.

Abstract: An organic light emitting diode and an organic light emitting display device, the organic light emitting diode including a first electrode and a second electrode facing each other; an emission layer between the first electrode and the second electrode; and a hole transport layer between the first electrode and the emission layer, wherein the hole transport layer includes an organic material and a dipole material, the dipole material including a first component and a second component, the first component having a polarity different from that of the second component and the first component and the second component being combined with each other.

Abstract: A lighting device may include a substrate having a carrier, a first electrical busbar, a second electrical busbar, and an optically functional structure on or above the carrier, wherein the optically functional structure is formed laterally between the first and the second electrical busbar, and a first electrode electrically coupled to the first electrical busbar and/or the second electrical busbar, on or above the carrier, and an organic functional layer structure on or above the first electrode, wherein the organic functional layer structure is formed for converting an electric current into an electromagnetic radiation, and a second electrode on or above the organic functional layer structure. The optically functional structure is formed in such a way that the beam path of the electromagnetic radiation which passes through the substrate and/or the spectrum of the electromagnetic radiation passing through the substrate are/is variable by means of the optically functional structure.

Abstract: Disclosed is an organic electroluminescence element that can provide uniform light emission over the entire surface and also can reduce the risk of short circuit and leakage. An organic electroluminescence element 10 according to the present invention includes a substrate 1, a first electrode 2, a second electrode 5, an organic layer 4 including a light-emitting layer, and an auxiliary wiring layer 3. The first electrode 2, the organic layer 4, and the second electrode 5 are laminated on one surface of the substrate 1 in this order. The organic layer 4 is connected electrically to both the electrodes. The auxiliary wiring layer 3 is arranged at a position where the auxiliary wiring layer 3 is not in contact with the organic layer 4. The auxiliary wiring layer 3 is connected electrically to the second electrode 5 and is not in contact with the first electrode 2.

Abstract: A display device in the present invention includes a display panel (320) which is provided with a display screen, a T-substrate (350) which is arranged in a predetermined range narrower than the display panel (320) at the back side of the display panel (320), first flexible printed circuit substrates (450) which extend downward from the upper end of the display panel (320) and are connected to the T-substrate (350), and second flexible printed circuit substrates (460) which extend upward from the lower end of the display panel (320) and are connected to the T-substrate (350) in order to achieve more reduction in thickness when the display panel and the circuit substrate are arranged together.

Abstract: The present invention discloses a packaging method for an organic light emitting diode including: providing a first substrate that is made of metallic foil; providing an organic light emitting diode on the first substrate; providing, outside the organic light emitting diode, a passivation layer for covering the organic light emitting diode; coating an encapsulation adhesive onto the first substrate entirely, so that the encapsulation adhesive covers the passivation layer; providing a second transparent substrate at least on a portion of the encapsulation adhesive covering the passivation layer; and curing the encapsulation adhesive, to form a package of the organic light emitting diode. The present invention also discloses a packaging structure for an organic light emitting diode, and an organic light emitting diode device having the packaging structure.

Abstract: Due to insufficient moisture inside a panel it may take a long time for a screening. An organic EL display device includes a light emitting region including a lower electrode, an organic EL layer, and an upper electrode, a barrier film formed so as to cover the light emitting region, and a moisture retaining film which is formed on the barrier film and is moisture retentive.

Abstract: A method for improving the operation of an OLED includes maximizing on-radiative transfer of excited state energy from the OLED's organic emissive material to surface plasmon polaritons in an enhancement layer by providing the enhancement layer no more than a threshold distance away from the organic emissive layer; and emitting light into free space from the enhancement layer by scattering the energy from the surface plasmon polaritons through an outcoupling layer that is provided proximate to the enhancement layer but opposite from the organic emissive layer.