Patents Issued in December 11, 2018
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Patent number: 10153114Abstract: An electronic-device seal structure includes a base, a case which covers an upper surface of the base and has an opening at a surface thereof, and a pair of terminals attached to the base. A first clearance sealed with a sealing material is provided between the base and the case, and a second clearance is provided between the pair of terminals attached to an end surface of the base to face each other.Type: GrantFiled: November 21, 2014Date of Patent: December 11, 2018Assignee: OMRON CorporationInventors: Kazuhiro Tsutsui, Masahiro Kinoshita, Ayaka Miyake, Jun Sasaki, Keisuke Tsuji
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Patent number: 10153115Abstract: To provide an electromagnetic contactor that enables electrical connection work of connecting the electromagnetic contactor to another electrical component disposed in a current path to be performed easily and efficiently. An electromagnetic contactor includes a main contact portion; an auxiliary contact portion; a contact housing case that houses the main contact portion and the auxiliary contact portion; an electromagnet unit that drives a movable plunger coupled to a connecting shaft of the main contact portion; main contact electrodes project out of a case wall of the contact housing case to an outside; auxiliary contact electrodes that are connected to a pair of fixed contacts of the auxiliary contact portion and project out of the case wall to an outside; and an auxiliary contact external terminal portion that is connected to the auxiliary contact electrodes and is arranged on a portion of the case wall.Type: GrantFiled: March 15, 2017Date of Patent: December 11, 2018Assignee: FUJI ELECTRIC FA COMPONENTS & SYSTEMS CO., LTD.Inventors: Kouetsu Takaya, Yuki Tashima, Hideo Adachi, Yasuhiro Naka, Koujun Konishi
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Patent number: 10153116Abstract: An electromagnetic switch includes: at least two stationary electric contacts; and a moveable contact, wherein the electromagnetic switch is configured for reciprocal motion of the moveable contact into and out of contact with the stationary electric contacts, wherein the moveable contact is configured so that at least three contact points occur in the reciprocal motion, and so that a triangle defined by the at least three contact points encloses a center of force of the movement.Type: GrantFiled: December 2, 2013Date of Patent: December 11, 2018Assignee: TESLA, INC.Inventors: Bennett Sprague, Ian C. Dimen, Scott I. Kohn, Andrew Titus, Jeffrey G. Reichbach, Gregory Michael Goetchius, Garland Dughi
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Patent number: 10153117Abstract: The invention relates to an electromagnetic contactor including: —first and second magnetic cores, the second core being mobile relative to the first core; —a control rod mobile between an inoperative position and a supply position, the control rod comprising a shoulder, in inoperative position: —the shoulder comprises one surface in contact with the first magnetic core, —the first magnetic core and the control rod separating a first chamber extending between the first and second magnetic cores and a second chamber in which the contact plate is located, and —at least one opening made between the first chamber and the second chamber allowing the transfer of air from the first chamber to the second chamber when the second magnetic core moves from the inoperative position to the magnetized position.Type: GrantFiled: July 30, 2015Date of Patent: December 11, 2018Assignee: Valeo Equipements Electriques MoteurInventors: Romain Guignot, Christophe Patroix
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Patent number: 10153118Abstract: A frame module for a circuit breaker includes a first interface structured to connect to a trip unit, a second interface structured to connect to a frame, and a current rating storage unit structured to store a current rating associated with the frame and to provide the stored current rating to the trip unit when the trip unit is connected to the first interface.Type: GrantFiled: August 24, 2015Date of Patent: December 11, 2018Assignee: EATON INTELLIGENT POWER LIMITEDInventors: James Leo Lagree, David Raymond Rohn, Paul Richard Rakus, Robert Frederick Brooks, Yibo Chen
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Patent number: 10153119Abstract: A movable contact conductor assembly is provided. The movable contact arm assembly includes an elongated member with a distal tip, a first end, a medial portion, an actuator coupling second component, a primary pivot second component, a secondary pivot second component, a clinch joint second component, a second end, and a proximal tip. During an over-current event the movable contact arm assembly member generates a loop force. A loop force first portion is disposed on a first longitudinal side of the movable contact arm assembly member primary pivot second component, and, a loop force second portion is disposed on a second longitudinal side of the movable contact arm assembly member primary pivot second component.Type: GrantFiled: September 28, 2015Date of Patent: December 11, 2018Assignee: EATON INTELLIGENT POWER LIMITEDInventors: Aaron Thomas Kozar, Robert Michael Slepian
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Patent number: 10153120Abstract: A bypass switch provides a bypass path between a first terminal and a second terminal. The bypass switch includes: a first set of electrical contacts respectively connected to the first terminal and the second terminal; a second set of electrical contacts respectively connected to the first terminal and the second terminal; and a movable member.Type: GrantFiled: April 24, 2015Date of Patent: December 11, 2018Assignee: ABB SCHWEIZ AGInventors: Erik Doré, Henrik Breder, Ola Jeppsson
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GFCI with miswire protection having unitary receptacle and load conductors after proper installation
Patent number: 10153121Abstract: An improved GFCI device prevents miswiring. Load conductors are electrically isolated from receptacle conductors. Normally closed contacts are held open by a miswire prevention mechanism, such that if power is connected to the load contacts, power cannot be delivered to the GFCI device, the receptacle conductors or the line conductors. Once power is properly connected to the line conductors, a proper wiring detection circuit activates the miswire prevention mechanism to release the normally closed contacts, thereby electrically connecting the receptacle conductors and the load conductors. After proper installation, the receptacle conductors are preferably permanently connected to the load conductors. The device is preferably shipped in the reset state.Type: GrantFiled: November 26, 2008Date of Patent: December 11, 2018Assignee: Hubbell IncorporatedInventors: John Phillip Goodsell, Sorin Ioan Mortun, Robert Fanzutti -
Patent number: 10153122Abstract: A temperature-sensitive pellet type thermal fuse having a cylindrical metal case (11), a first lead (1) fixedly installed and insulated from the case (11) and a second lead (2) electrically connected to the case (11). A temperature-sensitive pellet (12) is installed by melting inside the case (11) and has a variable height. A moving terminal (16) is elastically coupled by a first spring (17) to the temperature-sensitive pellet (12) and an activating member (15) moves in a height decrease direction of the temperature-sensitive pellet (12) by an elastic repulsive force of a second spring (18). When the temperature-sensitive pellet (12) is melted and thereby is reduced in height, a first moving contact (16b) of the moving terminal (16) is separated from a first contact (1a) of the first lead (1).Type: GrantFiled: January 25, 2017Date of Patent: December 11, 2018Assignees: DONG-YANG ELECTRONICS CO., LTDInventors: Sung Woong Yoon, Min Gon Kim
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Patent number: 10153123Abstract: An embodiment of a fuse module has been disclosed. The fuse module includes a housing and a fuse element assembly contained within the housing. The fuse element assembly includes at least one fuse element unit having a plurality of trigger mechanisms and a perforated strip electrically connected to the trigger mechanisms. Increased ampacity ratings in a more compact arrangement provides for fuse modules having increased current protection capability that, in turn, provides for improved disconnect switching capabilities.Type: GrantFiled: July 28, 2016Date of Patent: December 11, 2018Assignee: EATON INTELLIGENT POWER LIMITEDInventors: Advait Madhusudan Katarki, Patrick Alexander von zur Muehlen, Robert Stephen Douglass
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Patent number: 10153124Abstract: A multi-load fuse block, which receives insertion of at least two safety fuses therein, includes: a housing, a first surface of the housing configured with a first fuse slot and at least one second fuse slot; a conductive joint, configured on a second surface of the housing, and in electric connection with the first fuse slot; a first load conductive wire, configured on a third surface of the housing; and a second load conductive wire, configured on a fourth surface of the housing, where the first fuse slot and second fuse slot allow a plurality of safety fuses to be inserted therein or separated therefrom. The first load conductive wires and second load conductive wires of the housing can provide electric connection for automotive electronics, allowing the safety fuses to be in electric connection with more automotive electronics so as to protect them from overcurrent.Type: GrantFiled: April 6, 2017Date of Patent: December 11, 2018Assignee: GLORYTECH TECHNOLOGY CO., LTD.Inventor: Huan-Yao Ku
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Patent number: 10153125Abstract: An impulse voltage generating device includes: an insulation cylinder; a DC power source positioned outside the insulation cylinder; capacitors arranged successively and connected to the DC power source in parallel, the capacitors being provided in a plurality of stages, the capacitors being accommodated in metal containers positioned outside the insulation cylinder; a discharging gap switch positioned in the insulation cylinder and provided between the stages; a blower structure configured to cause an insulation gas to flow in the insulation cylinder; a bushing for each of the capacitors, the bushing being positioned outside the insulation cylinder; and a gas spraying structure positioned outside the insulation cylinder, the gas spraying structure being configured to spray the insulation gas to the bushing.Type: GrantFiled: April 1, 2014Date of Patent: December 11, 2018Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Takahiko Ishikura, Kenichi Mino
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Patent number: 10153126Abstract: A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.Type: GrantFiled: May 15, 2017Date of Patent: December 11, 2018Assignee: APPLIED MATERIALS ISRAEL LTD.Inventor: Alex Goldenshtein
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Patent number: 10153127Abstract: A low profile extraction electrode assembly including an insulator having a main body, a plurality of spaced apart mounting legs extending from a first face of the main body, a plurality of spaced apart mounting legs extending from a second face of the main body opposite the first face, the plurality of spaced apart mounting legs extending from the second face offset from the plurality of spaced apart mounting legs extending from the first face in a direction orthogonal to an axis of the main body, the low profile extraction electrode assembly further comprising a ground electrode fastened to the mounting legs extending from the first face, and a suppression electrode fastened to the mounting legs extending from the second face, wherein a tracking distance between the ground electrode and the suppression electrode is greater than a focal distance between the ground electrode and the suppression electrode.Type: GrantFiled: October 9, 2017Date of Patent: December 11, 2018Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventor: Jeffrey A. Burgess
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Patent number: 10153128Abstract: To realize a sample lifting and lowering device capable of easily responding to increase of a diameter of a sample with light weight and high rigidity as well as with less directional dependence of rigidity as the sample lifting lowering device arranged above a horizontal movement mechanism.Type: GrantFiled: April 22, 2016Date of Patent: December 11, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Masakazu Sugaya, Yusuke Moriwaki, Koichi Terada, Nobuo Shibata, Hironori Ogawa, Hiroyuki Kitsunai, Toshihiko Shimizu, Shuichi Nakagawa
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Patent number: 10153129Abstract: A charged particle beam device includes: a charged particle source; an acceleration electric power source connected to the charged particle source for accelerating a charged particle beam emitted by the acceleration electric power source; and an objective lens for focusing the charged particle beam onto a sample, the objective lens including: a central magnetic pole having a central axis coinciding with an ideal optical axis of the charged particle beam; an upper magnetic pole; a cylindrical side-surface magnetic pole; and a disk-shaped lower magnetic pole, the central magnetic pole having an upper portion on a side of the sample and a column-shaped lower portion, the upper magnetic pole having a circular opening at a center thereof and being in a shape of a disk that is tapered to a center thereof and that is thinner at a position closer to a center of gravity of the central magnetic pole.Type: GrantFiled: December 3, 2015Date of Patent: December 11, 2018Assignee: Matsusada Precision, Inc.Inventors: Kazuya Kumamoto, Sadayoshi Matsuda
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Patent number: 10153130Abstract: A charged particle beam drawing apparatus has a drawing unit including a charged particle source, a deflector and a stage on which a target object is placed, to perform drawing with a charged particle beam on a plurality of drawing regions on the target object, and a calculator to calculate a drawing progress ratio on the target object using a ratio of a drawn area of the drawing regions to a total area of the drawing regions.Type: GrantFiled: December 11, 2015Date of Patent: December 11, 2018Assignee: NuFlare Technology, Inc.Inventor: Sumito Nakada
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Patent number: 10153131Abstract: A plasma processing apparatus includes a processing chamber, a rotation table installed in the processing chamber and configured to load a substrate on an upper surface of the rotation table along a circumferential direction of the rotation table, and a plasma generator including an antenna located above an upper surface of the processing chamber and installed to be able to move in a radial direction of the rotation table, wherein the plasma generator is configured to locally apply plasma to the rotation table in the radial direction.Type: GrantFiled: March 27, 2017Date of Patent: December 11, 2018Assignee: TOKYO ELECTRON LIMITEDInventor: Hitoshi Kato
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Patent number: 10153132Abstract: Described herein is a technique capable of suppressing the effects of plasma on a film or a structure formed on a substrate. According to the technique, electrode for generating plasma includes protrusion provided with gas flow path inserted in holes of showerhead to uniformly supply gas in plasma state toward a substrate.Type: GrantFiled: May 26, 2017Date of Patent: December 11, 2018Assignee: Kokusai Electric CorporationInventor: Tsuyoshi Takeda
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Patent number: 10153133Abstract: A plasma reactor for processing a workpiece has a microwave source with a digitally synthesized rotation frequency using direct digital up-conversion and a user interface for controlling the rotation frequency.Type: GrantFiled: December 18, 2015Date of Patent: December 11, 2018Assignee: Applied Materials, Inc.Inventors: Satoru Kobayashi, Hideo Sugai, Soonam Park, Kartik Ramaswamy, Dmitry Lubomirsky
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Patent number: 10153134Abstract: A plasma generation system is provided that includes an elongated plasma chamber having a first elongated side wall substantially parallel to a longitudinal axis extending through the plasma chamber and a gas delivery device for delivering a gas to the plasma chamber via the first elongated side wall. The gas delivery device includes at least one input port for receiving a source of the gas and a plurality of output ports for delivering portions of the gas to the plasma chamber. The gas delivery device also includes a network of gas delivery paths comprising at least one branch point between the at least one input port and the plurality of output ports. The at least one branch point is directly connected to (i) an input node and (ii) at least two output nodes that are positioned offset from the branch point along the longitudinal axis.Type: GrantFiled: February 20, 2018Date of Patent: December 11, 2018Assignee: Nissin Ion Equipment Co., Ltd.Inventors: Sami K. Hahto, George Sacco, Matthew C. Farrell
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Patent number: 10153135Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.Type: GrantFiled: June 23, 2016Date of Patent: December 11, 2018Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Anthony Paul Wilby, Stephen R Burgess, Ian Moncrieff, Paul Densley, Clive L Widdicks, Paul Rich, Adrian Thomas
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Patent number: 10153136Abstract: A feed tube for a substrate processing system includes an outer tube and a feed rod. The feed rod is arranged within the outer tube. The feed rod is arranged to provide radio frequency power to the substrate processing system and the outer tube provides a return for the radio frequency power. At least one conductor is routed within the feed rod. The conductor is arranged to provide electrical power to at least one component of the substrate processing system separate from the radio frequency power provided by the feed rod.Type: GrantFiled: August 4, 2015Date of Patent: December 11, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Jason Augustino, John Drewery, Alex Paterson, Neil Benjamin
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Patent number: 10153137Abstract: The inventive concepts provide a substrate treating apparatus. The substrate treating apparatus includes a process chamber in which a treatment space is provided, a support unit supporting a substrate in the process chamber, a gas supply unit supplying a gas into the process chamber, and a plasma source generating plasma from the gas. The support unit includes a support plate on which a substrate is loaded, a focus ring disposed to surround the support plate, an electric field adjusting ring disposed under the focus ring, and an actuator vertically moving the electric field adjusting ring.Type: GrantFiled: October 14, 2016Date of Patent: December 11, 2018Assignee: Semes Co., Ltd.Inventors: Seok Won Hwang, Kisang Eum, Sun Wook Jung
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Patent number: 10153138Abstract: Disclosed is a plasma etching apparatus which includes: a base formed of a metal that has a lower expansion coefficient than aluminum; an electrostatic chuck disposed on a mounting surface of the base and configured to mount an object to be processed; a bonding layer which bonds the base to the electrostatic chuck; and a heater provided within the electrostatic chuck. In the plasma etching apparatus, the base is provided with a metal portion that is formed through a cold spraying by using a metal that has a higher thermal conductivity than the metal for forming the base.Type: GrantFiled: September 5, 2013Date of Patent: December 11, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Tadashi Aoto, Daisuke Hayashi
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Patent number: 10153139Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.Type: GrantFiled: June 17, 2015Date of Patent: December 11, 2018Assignee: Applied Materials, Inc.Inventors: Yang Yang, Kartik Ramaswamy, Steven Lane, Lawrence Wong, Shahid Rauf, Andrew Nguyen, Kenneth S. Collins, Roger Alan Lindley
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Patent number: 10153140Abstract: Provided are a method, a guiding sheet, a partial filling jig, and a full filling jig for installing an elastomer ring in the semiconductor processing equipment. The guiding sheet, the partial filling jig, and the full filling jig dispose the elastomer ring in the groove of the semiconductor processing equipment smoothly and evenly. Furthermore, the surface of the elastomer ring may be divided to multiple arcs portions. Each one of the arc portions may be pressed by the partial filling jig or the full filling jig in a particular sequence. When the groove is filled by the elastomer ring accurately and completely, the elastomer ring may block the fluid and the etching gas effectively. The elastomer ring may help the semiconductor processing equipment to work continuously and maintain qualities of the etching wafers.Type: GrantFiled: December 3, 2015Date of Patent: December 11, 2018Assignee: MFC SEALING TECHNOLOGY CO., LTD.Inventors: Yo-Yu Chang, Chun-Yao Huang
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Patent number: 10153141Abstract: Provided is an apparatus for monitoring a gas and plasma process equipment including the same. The apparatus includes: a housing including a gas inflow hole, a gas discharge hole, and windows; a light source disposed adjacent to one of the windows outside the housing to provide source light to a gas supplied between the gas inflow hole and the gas discharge hole; a sensor disposed adjacent to the other of the windows outside the housing to detect fluorescence emitted from the gas by the source light; and a coil disposed in the housing between the gas inflow hole and the gas discharge hole to heat and decompose the gas between the light source and the sensor, thereby increasing the fluorescence emitted from the gas.Type: GrantFiled: February 13, 2015Date of Patent: December 11, 2018Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sun Jin Yun, Kyu Sung Lee, JungWook Lim
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Patent number: 10153142Abstract: A sputtering target having a composition of LiCoO2, wherein a resistivity of the target is 100 ?cm or less, and a relative density is 80% or higher. The sputtering target of the present invention is effective for use in forming a positive electrode thin film in all-solid-state thin-film lithium ion secondary batteries equipped in vehicles, information and communication electronics, household appliances, and the like.Type: GrantFiled: March 10, 2015Date of Patent: December 11, 2018Assignee: JX Nippon Mining & Metals CorporationInventor: Kazuyuki Satoh
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Patent number: 10153143Abstract: A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.Type: GrantFiled: February 16, 2015Date of Patent: December 11, 2018Assignee: Applied Materials, Inc.Inventors: Simon Nicholas Binns, Brian T. West, Ronald Vern Schauer, Roger M. Johnson, Michael S. Cox
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Patent number: 10153144Abstract: A extreme ultraviolet (EUV) imaging spectrometer includes: a radiation source to: produce EUV radiation; subject a sample to the EUV radiation; photoionize a plurality of atoms of the sample; and form photoions from the atoms subject to photoionization by the EUV radiation, the photoions being field evaporated from the sample in response to the sample being subjected to the EUV radiation; and an ion detector to detect the photoions: as a function of a time-of-arrival of the photoions at the ion detector after the sample is subjected to the EUV radiation; or as a function of a position of the photoions at the ion detector.Type: GrantFiled: June 26, 2017Date of Patent: December 11, 2018Assignee: THE UNITED STATES OF AMERICA, AS REPRESENED BY THE SECRETARY OF COMMERCEInventors: Norman A. Sanford, Ann Chiaramonti Debay
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Patent number: 10153145Abstract: The present invention relates to a method of mass spectrometry, an apparatus adapted to perform the method and a mass spectrometer. More particularly, but not exclusively, the present invention relates to a method of mass spectrometry comprising the step of associating parent and fragmentation ions from a sample by measuring the parent and fragmentation ions from two or more different areas of the sample and identifying changes in the number of parent ions between the areas in the sample, and corresponding changes in the number of fragmentation ions between the two areas.Type: GrantFiled: April 3, 2017Date of Patent: December 11, 2018Assignee: MICROMASS UK LIMITEDInventors: Emmanuelle Claude, Mark Williams Towers, Kieran Neeson, Richard Denny, Jeffrey M. Brown, Paul R. Murray, Mark McDowall
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Patent number: 10153146Abstract: The invention provides methods, systems and algorithms for identifying high-resolution mass spectra. In some embodiments, an analyte is ionized and analyzed using high-resolution mass spectrometry (MS) at high mass accuracy (such as ?75 ppm or ?30 ppm) and the obtained mass spectra are matched with one or more prospective candidate molecules or chemical formulas. The invention provide, for example, methods and systems wherein the possible fragments that can be generated from the candidate molecules or chemical formulas are determined as well as the masses of each of these fragments. The invention provide, for example, methods and systems wherein the high-resolution mass spectra are then compared with the calculated fragment masses for each of the candidate molecules or chemical formula, and the portion of the high-resolution mass spectra that corresponds or can be explained by the calculated fragment masses is determined.Type: GrantFiled: March 27, 2015Date of Patent: December 11, 2018Assignee: Wisconsin Alumni Research FoundationInventors: Nicholas W. Kwiecien, Derek J. Bailey, Michael S. Westphall, Joshua J. Coon
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Patent number: 10153147Abstract: A method of mass or ion mobility spectrometry is disclosed comprising: releasing ions from an ion trapping volume into an ion separation region; separating the ions along a longitudinal direction according to a physicochemical property; and compressing the ion beam in a direction orthogonal to the longitudinal axis. The method enables the ions to be focussed without increasing the charge density and hence space-charge effects to undesirable levels.Type: GrantFiled: June 9, 2015Date of Patent: December 11, 2018Assignee: MICROMASS UK LIMITEDInventors: Kevin Giles, Jason Lee Wildgoose
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Patent number: 10153148Abstract: An apparatus 41 and operation method are provided for an electrostatic trap mass spectrometer with measuring frequency of multiple isochronous ionic oscillations. For improving throughput and space charge capacity, the trap is substantially extended in one Z-direction forming a reproduced two-dimensional field. Multiple geometries are provided for trap Z-extension. The throughput of the analysis is improved by multiplexing electrostatic traps. The frequency analysis is accelerated by the shortening of ion packets and either by Wavelet-fit analysis of the image current signal or by using a time-of-flight detector for sampling a small portion of ions per oscillation. Multiple pulsed converters are suggested for optimal ion injection into electrostatic traps.Type: GrantFiled: September 6, 2017Date of Patent: December 11, 2018Assignee: LECO CorporationInventor: Anatoly N. Verenchikov
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Patent number: 10153149Abstract: An apparatus 41 and operation method are provided for an electrostatic trap mass spectrometer with measuring frequency of multiple isochronous ionic oscillations. For improving throughput and space charge capacity, the trap is substantially extended in one Z-direction forming a reproduced two-dimensional field. Multiple geometries are provided for trap Z-extension. The throughput of the analysis is improved by multiplexing electrostatic traps. The frequency analysis is accelerated by the shortening of ion packets and either by Wavelet-fit analysis of the image current signal or by using a time-of-flight detector for sampling a small portion of ions per oscillation. Multiple pulsed converters are suggested for optimal ion injection into electrostatic traps.Type: GrantFiled: September 6, 2017Date of Patent: December 11, 2018Assignee: LECO CorporationInventor: Anatoly N. Verenchikov
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Patent number: 10153150Abstract: Among other things, we describe methods and apparatus for the ionization of target molecular analytes of interest, e.g., for use in mass spectrometry. In some implementations, a thin molecular stream is emitted in either single or a split mode and encounters both an electron-impact ion source and trochoidal electron monochromator placed sequentially or coincidently. The first ion source emits high-energy electrons (˜70 eV) to generate characteristic positively-charged mass fragment spectra while the second source emits low-energy electrons in a narrow bandwidth to generate negative molecular ions or other ions via electron capture ionization. The dual ion source may be coupled to analytical instruments such as a gas chromatograph and to any number of mass analyzers such as a polarity switching quadrupole mass analyzer or to multiple mass analyzers.Type: GrantFiled: March 29, 2016Date of Patent: December 11, 2018Assignee: MERIDION, LLCInventor: Nicholas Wilton
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Patent number: 10153151Abstract: Provided are a phosphor-containing capable of suppressing deterioration of phosphors and can be manufactured with high efficiency and a backlight unit. Specifically, provided is a phosphor-containing film 1, including a first substrate film 10; and a phosphor-containing layer 30 at which a plurality of regions 35 containing phosphors 31, which, if exposed to oxygen, deteriorate by reacting with the oxygen, are discretely disposed on the first substrate film 10, and at which a resin layer 38 having an impermeability to oxygen is disposed between the discretely disposed regions 35 containing phosphors 31, in which a width S of the resin layer 38 between the regions 35 containing phosphors 31 is 0.01?S<0.5 mm, and wherein a ratio of a volume Vp of the regions containing phosphors, to a sum of the volume Vp and a volume Vb of the resin layer in the phosphor-containing layer, is 0.1?Vp/(Vp+Vb)<0.9.Type: GrantFiled: January 12, 2018Date of Patent: December 11, 2018Assignee: FUJIFILM CorporationInventors: Keisuke Oku, Kenichi Kakishita, Tatsuya Oba
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Patent number: 10153152Abstract: The present technology provides a high-pressure sodium lamp lighting device that reduces occurrence of the acoustic resonance phenomenon. A high-pressure sodium lamp lighting device of one aspect of the present invention comprises a high-pressure sodium lamp of arc length AL within the scope of 142.8 mm?AL?167 mm. The lighting device also includes an electronic ballast configured to supply a high frequency AC voltage to the high-pressure sodium lamp. A lighting frequency of the electronic ballast is a frequency that avoids a first and a second acoustic resonance occurrence bands f1 kHz and f2 kHz determined based on equations from an arc tube inner diameter D mm of the high-pressure sodium lamp. The equation for f1 is a range of f1min to f1max=(?7.4D+130) to (?8.3D+156). The equation for f2 is a range of f2 min to f2max=(?11.5D+200) to (?10.0D+197).Type: GrantFiled: September 27, 2017Date of Patent: December 11, 2018Assignee: Iwasaki Electric Co., Ltd.Inventors: Kouji Komata, Hiroki Takahashi, Takuya Shimomura
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Patent number: 10153153Abstract: An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.Type: GrantFiled: March 13, 2017Date of Patent: December 11, 2018Assignee: CENTRAL GLASS COMPANY, LIMITEDInventors: Akiou Kikuchi, Masanori Watari, Kenji Kameda, Shin Hiyama, Yasutoshi Tsubota
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Patent number: 10153154Abstract: Preparing a low dielectric constant thin film layer used in an integrated circuit includes: extracting gas out of a furnace; when the vacuum level within the furnace is less than 10?3 Pa, starting a 13.36 MHz radio frequency power supply and a matcher; sending the exhaust nitrogen gas, used to remove remaining gas out of the furnace by a third gas inlet pipe, into the furnace through a second pressure gas mixing tank and a second nozzle sequentially; uniformly mixing octamethyl cyclotetrasiloxane and cyclohexane, and introducing same into a pressure stainless steel tank, and, respectively by first and second gas inlet tubes, introducing bubbled nitrogen gas and inert gas into the furnace sequentially through a first pressure gas mixing tank, the pressure stainless steel tank and a first nozzle; after deposition, transferring the deposited thin film layer to the furnace's heating zone for annealing, obtaining a low dielectric constant thin film layer.Type: GrantFiled: June 23, 2014Date of Patent: December 11, 2018Assignee: SOOCHOW UNIVERSITYInventors: Xuhui Sun, Yujian Xia
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Patent number: 10153155Abstract: Techniques for forming an electronic device having a ferroelectric film are described. The electronic device comprises a ferroelectric material having one or more crystalline structures. The one or more crystalline structures may comprise hafnium, oxygen, and one or more dopants. The one or more dopants are distributed in the ferroelectric material to form a first layer, a second layer, and a third layer. The second layer is positioned between the first layer and the third layer. Distribution of one or more dopants within the first layer, the second layer, and the third layer may promote a crystalline structure to have an orthorhombic phase.Type: GrantFiled: October 6, 2016Date of Patent: December 11, 2018Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATEDInventors: Toshikazu Nishida, Mohammad Takmeel, Saeed Moghaddam, Patrick Lomenzo
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Patent number: 10153156Abstract: According to one example, a process includes performing a first plurality of layer deposition cycles of a deposition process on a substrate, and after performing the first plurality of layer deposition cycles, performing a plasma enhanced layer deposition cycle comprising a plasma treatment process. The first plurality of layer deposition cycles are performed without a plasma treatment process.Type: GrantFiled: February 15, 2017Date of Patent: December 11, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun Hsiung Tsai, Kuo-Feng Yu, Yuh-Ta Fan
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Patent number: 10153157Abstract: A method of forming a semiconductor structure includes forming a silicon-germanium layer on a semiconductor region of a substrate having a specific concentration of germanium atoms. The semiconductor region and the silicon-germanium layer are annealed to induce a non-homogenous thermal diffusion of germanium atoms from the silicon-germanium layer into the semiconductor region to form a graded silicon-germanium region. Another method of forming a semiconductor structure includes etching a semiconductor region of the substrate to form a thinned semiconductor region. A silicon-germanium layer is formed on the thinned semiconductor region having a graded germanium concentration profile.Type: GrantFiled: August 26, 2015Date of Patent: December 11, 2018Assignee: International Business Machines CorporationInventors: Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek
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Patent number: 10153158Abstract: Methods are provided for fabricating semiconductor nanowires on a substrate. A nanowire template is formed on the substrate. The nanowire template defines an elongate tunnel which extends, laterally over the substrate, between an opening in the template and a seed surface. The seed surface is exposed to the tunnel and of an area up to about 2×104 nm2. The semiconductor nanowire is selectively grown, via said opening, in the template from the seed surface. The area of the seed surface is preferably such that growth of the nanowire proceeds from a single nucleation point on the seed surface. There is also provided a method for fabricating a plurality of semiconductor nanowires on a substrate and a semiconductor nanowire and substrate structure.Type: GrantFiled: December 8, 2014Date of Patent: December 11, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Mattias Bengt Borg, Kirsten Emilie Moselund, Heike E. Riel, Heinz Schmid
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Patent number: 10153159Abstract: An approach to deposit, by a self-aligning process, a layer of graphene on a gate formed on a dielectric layer on a semiconductor substrate where the gate includes a metal catalyst material. The approach includes removing a portion of the dielectric layer and a portion of the semiconductor substrate not under the gate and depositing, by a self-aligning atomic layer deposition process, a layer of a material capable of creating a source and a drain in a semiconductor device on exposed surfaces of the semiconductor substrate and the dielectric layer. The approach includes removing the layer of graphene from the gate, and, then removing a portion of the layer of the material capable of creating the source and the drain in the semiconductor device.Type: GrantFiled: November 30, 2017Date of Patent: December 11, 2018Assignee: International Business Machines CorporationInventors: Seyoung Kim, Yun Seog Lee, Devendra Sadana, Joel de Souza
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Patent number: 10153160Abstract: In accordance with an embodiment of the present disclosure, a method of manufacturing a semiconductor device may include forming an opening passing-through a multi-layer stack, forming a channel layer on and along a sidewall of the opening, forming a conductive layer on and along a sidewall of the channel layer, and applying a laser to the conductive layer to transfer a heat from the conductive layer to the channel layer to heat-treat the channel layer using the heat.Type: GrantFiled: June 14, 2017Date of Patent: December 11, 2018Assignee: SK hynix Inc.Inventor: Min Sung Ko
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Patent number: 10153161Abstract: A method for manufacturing a semiconductor structure includes forming a target layer, a lower hard mask layer, a middle hard mask layer, and an upper hard mask layer in sequence on a substrate. A first mask layer is then formed on the upper hard mask layer, wherein the first mask layer has a plurality of openings exposing a portion of the upper hard mask layer. A patterned upper hard mask layer having a plurality of apertures exposing a portion of the middle hard mask layer is formed by etching the exposed portion of the upper hard mask layer. A patterned organic layer is then formed on the exposed portion of the middle hard mask layer. A patterned target layer is formed by etching the patterned upper hard mask layer, the patterned organic layer, the middle hard mask layer, the lower hard mask layer, and a portion of the target layer.Type: GrantFiled: November 27, 2017Date of Patent: December 11, 2018Assignee: NANYA TECHNOLOGY CORPORATIONInventor: Shing-Yih Shih
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Patent number: 10153162Abstract: Methods for fabricating integrated circuits are provided. In one example, a method includes providing a circuit structure layer over a substrate and at least one etch layer over the circuit structure layer, in the at least one etch layer patterning at least one primary pattern feature having at least one primary pattern feature dimension and at least one assist pattern feature having at least one assist pattern feature dimension, where the primary pattern feature dimension is greater than the assist pattern feature dimension, reducing the at least one primary pattern feature dimension and closing the assist pattern feature to form an etch pattern, and etching a circuit structure feature using the etch pattern.Type: GrantFiled: October 4, 2016Date of Patent: December 11, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Ryan Ryoung-Han Kim, Wenhui Wang, Azat Latypov, Tamer Coskun, Jr., Lei Sun
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Patent number: 10153163Abstract: Example embodiments relate to a hardmask composition and/or a method of forming a fine pattern by using the hardmask composition, wherein the hardmask composition includes at least one of a two-dimensional layered nanostructure and a precursor thereof, and a solvent, and an amount of the at least one of a two-dimensional layered nanostructure and the precursor is about 0.01 part to about 40 parts by weight based on 100 parts by weight of the hardmask composition.Type: GrantFiled: June 2, 2017Date of Patent: December 11, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeonjin Shin, Sangwon Kim, Seongjun Park