Abstract: A method for manufacturing a spring is disclosed that comprises: forming the spring from a material; heat treating the spring; performing a first machining step to the ends of the spring; subjecting the spring to a first stress relief heat treatment; performing a second machining step to the ends of the spring; and subjecting the spring to a second stress relief heat treatment step. A spring that is manufactured by this method is also described. This spring may then be used in a pressure relief valve, as well as in other assemblies.

Abstract: Provided is a method for manufacturing a zinc-based coated steel sheet having excellent press formability. The method includes an oxide layer-forming step of bringing the zinc-based coated steel sheet into contact with an acidic solution, holding the zinc-based coated steel sheet for 1 second to 60 seconds, and then water-washing the zinc-based coated steel sheet and a neutralization step of holding a zinc-based oxide layer formed in the oxide layer-forming step for 0.5 seconds or more in such a state that a surface of the zinc-based oxide layer is in contact with an alkaline aqueous solution, water-washing the zinc-based oxide layer, and then drying the zinc-based oxide layer. The acidic solution contains HF2Na and/or HF2K in a total amount of 0.10 g/L to 5.0 g/L.

Abstract: A workpiece made from a self passivating metal and having one or more surface regions defining a Beilby layer as a result of a previous metal shaping operation is activated for subsequent low temperature gas hardening by exposing the workpiece to the vapors produced by heating an oxygen-free nitrogen halide salt.

Abstract: Low temperature carburization of stainless steel using acetylene as the carburizing specie is carried out under soft vacuum conditions in the presence of hydrogen or other companion gas. As a result, formation of soot and the undesirable thermal oxide film that normally occurs during low temperature carburization is eliminated virtually completely.

Abstract: A method for fabricating a bi-layer thin film is provided. A first alloy is deposited onto a substrate using a first alloy target to form a first layer of the bi-layer thin film. The first layer may comprise greater than 50 atomic % titanium (Ti) and/or less than 50 atomic % nickel (Ni). The first alloy may be deposited onto the substrate at a first temperature (e.g., room temperature). The substrate may be made of a polymer material (e.g., Kapton). A second alloy is deposited onto the first layer using a second alloy target to form a second layer of the bi-layer thin film. The second layer may comprise greater 50 atomic % nickel and/or less than 50 atomic % titanium. The second alloy may be deposited onto the first layer at a second temperature (e.g., room temperature). The bi-layer thin film may exhibit pseudo elasticity and shape memory effect (SME).

Abstract: The present invention relates to a vacuum deposition facility for depositing a metal alloy coating on a substrate (7), said facility being equipped with a vapour generator/mixer comprising a vacuum chamber (6) in the form of an enclosure provided with means for creating a vacuum state therein relative to the external environment and provided with means for the entry and exit of the substrate (7), while still being essentially sealed from the external environment, said enclosure including a vapour deposition head, called the injector (3), configured so as to create a jet of metal alloy vapour of sonic velocity towards the surface of the substrate (7) and perpendicular thereto, said ejector (3) being in sealed communication with a separate mixer device (14), which is itself connected upstream to at least two crucibles (11, 12) respectively, these containing different metals M1 and M2 in liquid form, each crucible (11, 12) being connected to the mixer (14) by its own pipe (4, 4?).

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm3 and equal to or lower than 7.1 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

Abstract: A pulsed laser deposition system comprising a split ablation target having a first half and a second half, wherein the target contains a film material for deposition on a substrate, and wherein the film material is comprised of a plurality of component elements, the elements varying in volatility, and wherein one half of the split ablation target contains more of the most volatile elements being deposited than the other half, and wherein the split ablation target is rotated about its center. A laser beam is rastered back and forth across the target such that the laser spends more time on one half of the split target than the other half depending on the elemental volatility. The target rotation and laser beam rastering are coordinated simultaneously to vary the elemental composition of the resulting film deposition.

Abstract: A vacuum chamber having a vacuum chamber; at least one processing region arranged in the vacuum chamber; and a substrate holding arrangement for transporting and/or positioning a substrate or multiple substrates in the processing region, wherein the substrate holding arrangement has: a first drive train with a first substrate holder, the first substrate holder being configured to rotatably hold one or more substrates, a second drive train with a first support arm, wherein the first substrate holder is held rotatably by the first support arm, a third drive train with a second substrate holder, the second substrate holder being configured for rotatably holding one or more substrates, and a fourth drive train with a second support arm, wherein the second substrate holder is held rotatably by the second support arm, and wherein the first, second, third and fourth drive trains are each configured to be controllable independently of one another.

Abstract: Methods are disclosed to provide arrays of substantially oxide-free or uncontrolled oxide-free structures, such as titanium nanotubes or microwells. In one aspect, the method includes plasma treating the structure having an oxide layer thereon to weaken the bonds in the oxide layer and then bombarding the oxide layer having weakened bonds with hydrogen radicals to remove the oxide layer to form a titanium layer. The cyclic plasma treatment and hydrogen radical exposure processes are generally repeated until the oxide layer is removed from the structure. Arrays of titanium structures manufactured according to the described methods are well controlled and have improved device performance since the oxide layer has been removed and the signal-to-noise ratio of the device has been optimized for improved sensing.

Abstract: As a process of preparing for a restart of an epitaxial reactor in which epitaxial growth for a wafer is performed, an embodiment includes injecting a nitrogen gas into a process chamber provided in the epitaxial reactor and purging the gas for a predetermined time; heating the inside of the process chamber non-linearly according to time; and measuring MCLT for the epitaxial wafer after growing the epitaxial wafer. A method of preparing for a restart of an epitaxial reactor of the embodiment removes moisture and contaminants stagnated inside the process chamber at a higher rate compared to the related art and also reduces a time to reach the minimum value of MCLT for preparing for a restart of an epitaxial reactor, and thus a time for preparing for a restart of an epitaxial reactor may also be reduced.

Abstract: A mask includes a shielding portion and a plurality of hollow regions. The shielding portion includes: a plurality of shielding strips, a plurality of raised portions and a plurality of grooves. Side surfaces of some of the plurality of shielding strips are sequentially connected to form one of the plurality of hollow regions. Each raised portion is disposed on a side surface of a corresponding one of the plurality of shielding strips close to a corresponding hollow region, and each raised portion is connected with the side surface of the shielding strip. Each groove is at least partially formed in a first surface of a corresponding one of the plurality of raised portions, and the first surface is parallel to a plate surface of the mask.

Abstract: A chemical vapor deposition process comprising heating a porous metal template at a temperature range of 500 to 2000° C.; and passing a gas mixture comprising a carrier gas carrying along a vapor of an organometallic compound and at least one of a carbon precursor gas and a boron nitride precursor gas through the heated metal template is provided. The heating temperature causes the decomposition of the organometallic compound vapor into metal particles, the carbon precursor gas into graphene domains, and/or the boron nitride precursor gas into hexagonal-boron nitride domains. The graphene domains and/or the hexagonal-boron nitride domains nucleate and grow on the metal particles and the metal template to form a three-dimensional interconnected porous network of graphene and/or the hexagonal-boron nitride. A foam-like structure produced by a process as described above is also provided.

Abstract: Methods and systems for dry cleaning a semiconductor processing reaction chamber are disclosed herein. In some embodiments, a method for cleaning a semiconductor processing reaction chamber includes: performing a plasma-assisted cleaning process to clean tube deposits formed on an inner surface of the deposition reaction chamber, the plasma-assisted cleaning process comprises: providing a first reactant gas to a remote plasma source chamber to generate a plasma, wherein the plasma comprising a fluorine-containing radical; and providing the plasma from the remote plasma source chamber to the deposition reaction chamber to clean the tube deposits, and performing a chemical cleaning process by providing a second reactant gas to the deposition reaction chamber after performing the plasma dry cleaning process.

Abstract: There is provided a technique that includes: a reaction chamber that processes a substrate on a substrate support; a transfer chamber; a gate that opens and closes an opening and is formed in the transfer chamber; a transfer device; a clean unit supplying a clean atmosphere to the transfer chamber; an inert gas supplier supplying an inert gas to the transfer chamber; and a controller controlling the inert gas supplier such that, after the loading of the substrate from a substrate container to the substrate support by the transfer device is completed and the gate is closed, the inert gas supplier supplies the inert gas during a time period until the gate is opened again and does not supply the inert gas in another time period, and control the transfer chamber to be kept at a positive pressure by an air atmosphere.

Abstract: A sealing article includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

Abstract: An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first fill level; and a second chamber configured for holding the source chemical with a second fill level and in fluid communication with the first chamber via a fluid channel below the first and second fill levels. The apparatus may also include: a second chamber inlet opening in fluid communication with a pressurizing gas feed provided with a flow controller configured for controlling a flow of a pressurizing gas in the second chamber to control the first fill level in the first chamber. Methods for dispensing a vapor phase reactant are also provided.

Abstract: A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.

Abstract: To reduce pumping time of a vacuum treatment chamber served by a transport arrangement in a transport chamber. The vacuum treatment chamber is split in a workpiece treatment compartment and in a pumping compartment in mutual free flow communication and arranged opposite each other with respect to a movement path of the transport arrangement serving the vacuum treatment chamber. The pumping compartment allows providing a pumping port of a flow cross-section area freely selectable independently from the geometry of the treatment compartment.

Abstract: A technique capable of adjusting a thickness balance of a film between substrates stacked in a process chamber of a substrate processing apparatus, includes a method of manufacturing a semiconductor device, including: (a) supplying source gas to substrates through a first nozzle vertically disposed along a stacking direction of the substrates in a process chamber where the substrates are stacked and accommodated; and (b) supplying reactive gas to the substrates through a second nozzle provided with opening portions and vertically disposed along the stacking direction of the substrates in the process chamber while adjusting a partial pressure balance of the reactive gas in the stacking direction of the substrates to a desired state along the stacking direction of the substrates, wherein an opening area of each of the opening portions increases along a direction from an upstream side to a downstream side of the second nozzle.

Abstract: A plasma deposition method in which a cover layer is deposited onto the internal walls of an empty plasma chamber by plasma deposition of a precursor mixture comprising (i) one or more hydrocarbon compounds of formula (A), or (ii) one or more C1-C3 alkane, C2-C3 alkene or C2-C3 alkyne compounds: (Formula (A)) wherein: Z1 represents C1-C3 alkyl or C2-C3 alkenyl; Z2 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl; Z3 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl; Z4 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl; Z5 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl; and Z6 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl.

Abstract: A two-phase method is provided for applying a lubricity layer to a surface. The two-phase method comprises a low power deposition step and a high power crosslinking step. The method includes providing a surface of a vessel or an object to be processed. A gas inlet having an internal passage having at least one outlet is provided. An outer electrode is provided. A gaseous PECVD precursor is introduced via at least one outlet of the internal passage. Electromagnetic energy is applied to the outer electrode under conditions effective to form a PECVD lubricity layer on at least a portion of the inner surface. Relative axial motion between the vessel or the object and the gas inlet is provided during at least some time when electromagnetic energy is applied to the outer electrode.

Abstract: A method of forming graphene nanostripes includes providing a substrate comprising at least one of copper foil or nickel foam and subjecting the substrate to a reduced pressure environment in a processing chamber. The method also includes providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas, flowing the methane gas and the 1,2-DCB into the processing chamber, and establishing a partial pressure ratio of 1,2-DCB gas to methane gas in the processing chamber. The partial pressure ratio is between 0 and 3. The method further includes generating a plasma, thereafter, exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma, and growing the graphene nanostripes coupled to the at least a portion of the substrate.

Abstract: The present disclosure relates to a method for producing a coating film having high heat resistance, high hardness and wear resistance, a coating film having high heat-resistance, high hardness and wear resistance produced using the method, and a cutting tool including the same. The method includes forming a metal nitride layer on a metal base; forming a carbon layer on the metal nitride layer; and irradiating a laser into the carbon layer to add carbons into a portion of the metal nitride layer, thereby to form a carburized layer.

Abstract: An apparatus for depositing a coating on a substrate at atmospheric pressure comprises (a) a plasma torch comprising a microwave source coupled to an antenna disposed within a chamber having an open end, the chamber comprising a gas inlet for flow of a gas over the antenna to generate a plasma jet; (b) a substrate positioned outside the open end of the chamber a predetermined distance away from a tip of the antenna; and (c) a target material to be coated on the substrate disposed at the tip of the antenna.

Abstract: A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

Abstract: A tow coating reactor system includes a reactor for receiving fiber tow, a wedge situated adjacent the reactor and configured to receive the tow at a tip end, such that as the tow moves across the wedge, the wedge spreads the tow into a plurality of sub-tows.

Abstract: Apparatus and methods are disclosed to provide arrays of substantially oxide-free structures, such as titanium nanotubes or microwells. In one aspect, a hot wire chemical vapor deposition (HWCVD) chamber includes a metal chamber liner manufactured from one or more of aluminum (Al), lithium (Li), magnesium (Mg), calcium (Ca), zirconium (Zr), strontium (Sr), cerium (Ce), barium (Ba), beryllium (Be), lanthanum (La), thorium (Th), and alloys thereof. In one aspect, a method includes positioning a substrate having an array of titanium oxide structures with an oxide layer on surfaces thereof in the HWCVD chamber having the metal chamber liner, exposing the titanium oxide structures with the oxide layer on surfaces thereof to hydrogen (H) radicals, and removing the oxide layer to form well-ordered titanium structures.

Abstract: A method for fabrication of selectively deposited electroless copper metallization on a photo-definable glass substrate. The electroless copper can metallize a two-dimensional or three-dimensional structure on the photo-definable glass to connect or isolate passive or active devices. The electroless copper metallization can also coat the side walls of aspect ratio blind or through hole via.

Abstract: A base plate is arranged to define a portion of a housing of a hard disk drive, and includes a base body defined by casting, and an electrodeposition coating film arranged to cover a surface of the base body. The surface of the base body includes a coated surface covered with the electrodeposition coating film, and a flat worked surface exposed from the electrodeposition coating film. The worked surface may include a gate position to which a gate has been connected at the time of the casting. At least a portion of the worked surface is covered with an impregnant.

Abstract: The present invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the present invention comprises a source for palladium ions, a reducing agent for palladium ions and an aromatic compound. The aqueous plating bath composition has an increased deposition rate for palladium while maintaining bath stability. The aqueous plating bath composition has also a prolonged life time. The aromatic compounds of the present invention allow for adjusting the deposition rate to a constant range over the bath life time and for electrolessly depositing palladium layers at lower temperatures. The aromatic compounds of the present invention activate electroless palladium plating baths having a low deposition rate and reactivate aged electroless palladium plating baths.

Abstract: The invention relates to corrosion-inhibiting substance combinations capable of evaporation or sublimation, containing at least: (1) substituted 1,4-benzoquinone, (2) aromatic or alicyclic substituted carbamate, (3) polysubstituted phenol, and (4) monosubstituted pyrimidine. These combinations preferably include 1-30 mass % of component (1), 5-40 mass % of component (2), 2-20 mass % of component (3), and 0.5-10 mass % of component (4), each relating to the total quantity of the substance combination. The components can be provided mixed together or dispersed in water, or also pre-mixed in solubilizer that can be mixed with mineral oils and synthetic oils, preferably an arylalkylether alcohol such as, e.g., phenoxyethanol. Such substance combinations can be used as vapor phase corrosion inhibitors in packaging or during storage in closed spaces for protecting common commodity metals such as iron, chrome, nickel, aluminum, copper and their alloys as well as galvanized steels, against atmospheric corrosion.

Abstract: Sacrificial anodes for installing in an ionically conductive medium at an installation site containing metal requiring cathodic protection are formed by locating anode cores in a tray having dividing members defining a row of side by side chambers with each chamber containing a respective one of the anode cores and casting into the receptacle a covering mortar for the anode cores with each anode core receiving a coating at least partly surrounding the anode core with the connecting wire exposed. The mortar is cast to form frangible bridges between each anode and the next. The trays are stacked and transported to the site where the installer separates and individually installs the anodes into the medium.

Abstract: A method for producing a porous member, whereby a member having smaller microgaps can be produced, and additionally, the outermost surface alone can be made porous and a porous layer can be formed on the surface while maintaining the characteristics of portions in which no porous layer is formed, is provided.

Abstract: A method for shear-assisted electrochemical exfoliation of a layered van der Waals solid (such as graphite, MoS2, BN, or WS2) into a two dimensional material (such as graphene where the original layered van der Waals solid is graphite) can at least partly overcome certain limitations of electrochemical exfoliation techniques with shear-induced effects.

Abstract: Photocatalytic device to dissociate an aqueous phase to product hydrogen gas, said device being set up in such a way that at least one photocatalytic system in contact with said aqueous phase can be irradiated by a light source to produce—through an oxidation reaction in said aqueous phase—oxygen gas, electrons and protons at a means of electron capture, said device comprising: a first zone comprising said aqueous phase, and a means for reducing said protons set up to carry out a reduction reaction on said protons by said electrons in order to generate hydrogen gas. said device being characterised in that said means for proton reduction is a proton exchange interface with a front side facing said means of electron capture, and a back side, with only said back side of said proton exchange interface bearing at least one catalyst and/or at least one catalytic system.

Abstract: Various embodiments may include a method of electrochemical production of synthesis gas comprising: reducing carbon dioxide to a first product gas including carbon monoxide in a carbon dioxide electrolysis cell; splitting water to generate a second product gas including hydrogen in a water electrolysis cell; delivering at least one catholyte from the group consisting of: a first catholyte from the carbon dioxide electrolysis cell and a second catholyte from the water electrolysis cell, into a gas scrubbing apparatus; and removing non-reduced carbon dioxide from the first product gas in the gas scrubbing apparatus using the at least one catholyte as an absorbent.

Abstract: A system for regulating the pressure of a high-temperature electrolysis or co-electrolysis (HTE) reactor or a fuel cell (SOFC) operating under pressure. The operation of the system includes: regulating the DH wet gas flow upstream of one of the chambers so as to ensure the electrochemical stability of the predetermined operating point; regulating the DO gas flow upstream of the at least one second chamber so as to ensure gas scavenging in the at least one second chamber, and in the enclosure; regulating the flow of second gas circulating in the enclosure, downstream of the enclosure, so as to ensure the detection of leaks and safety in relation thereto and to prevent the formation of an explosive atmosphere; and controlling the pressure, by means of the regulation valves arranged downstream of the stack, on the gases, including the wet gas, which are also generally hot.

Abstract: A generator housed in a 40 foot container (12.192 m) includes a first stack (1) and a second stack (2) electrically connected in series, a single oxygen separator unit (3), a hydrogen separator (4), a purification unit (5), a rectifier (6) and a general control panel (8) all of them for the two stacks (1) and (2). The generator also includes three unit heaters (9), one for the deionization unit and two for the recirculation pumps which have one per stack (1) and (2). The generator produces up to 400 Nm3/h at 40 barg of pressure in a single module, is easy to transport and integrates in its final location, reducing operating costs.

Abstract: The present invention relates to a water splitting cell having at least one electrode comprising a porous membrane, wherein gas produced at the electrode diffuses out of the cell via the porous membrane, separating the gas from the reaction at the electrode without bubble formation.

Abstract: A control system for an electrolytic cell includes a voltage converter converting an input voltage into a decomposition voltage, a temperature sensor generating a sensed temperature, an electric power sensor generating a sensed voltage, and a control unit storing voltage-temperature characteristics. The control unit determines a voltage that corresponds to the sensed temperature according to one of the voltage-temperature characteristics, and generates, according to a difference between the voltage thus determined and the sensed voltage, a control signal which is provided to the voltage converter such that the decomposition voltage decreases along with increase in the sensed temperature.

Abstract: The embodiments herein relate to methods, apparatus, and systems for forming and purifying solid carbon material from a molten carbonate salt electrolyte. Various embodiments also provide methods, apparatus, and systems for recycling certain materials including the carbonate salt electrolyte, carbon dioxide, water, etc. Advantageously, the system utilizes carbon dioxide in one or more processes, for example to purify the solid carbon and regenerate the carbonate salt electrolyte. These methods, apparatus, and systems provide an efficient technique to consume carbon dioxide in the production of solid carbon, with substantial advantages over systems that attempt to form solid carbon from a stream of carbon dioxide provided directly to an electrolysis reactor.

Abstract: A solid electrolyte membrane is disposed between an anode and a substrate, and voltage is applied between the anode and the substrate while the solid electrolyte membrane is pressed onto the substrate so as to form a metal film on the substrate. In this film forming method, there is used the solid electrolyte membrane that includes: a first portion made of an ion permeable material; and a second portion made of a material having an electric insulating property and having a low permeability of metallic ions, the second portion being embedded in the first portion so as to be exposed from a surface of the solid electrolyte membrane, the surface of the solid electrolyte membrane facing the substrate.

Abstract: Superconformally filling a recessed feature includes: contacting the recessed feature with superconformal filling composition that includes: Au(SO3)23? anions; SO32? anions; and Bi3+ cations; convectively transporting Au(SO3)23? and Bi3+ to the bottom member of the recessed feature; subjecting the recessed feature to an electrical current to superconformally deposit gold from the Au(SO3)23? on the bottom member relative to the sidewall and the field, the electrical current providing a cathodic voltage; and increasing the electrical current subjected to the field and the recessed feature to maintain the cathodic voltage between ?0.85 V and ?1.00 V relative to the SSE during superconformally depositing gold on the substrate to superconformally fill the recessed feature of the article with gold as a superconformal filling of gold, the superconformal filling being void-free and seam-free.

Abstract: Provided is a conductive material including: a base material that is conductive at least at a surface thereof; and a titanium film on the surface of the base material, the titanium film having an average film thickness of not less than 1 ?m and not more than 300 ?m.

Abstract: A plating apparatus including a plating bath, a substrate holder to be arranged in the plating bath and adapted to hold a substrate, an anode for generating an electric field between the substrate and the anode, and at least one electric field shielding body for shielding the substrate holder and a part or the whole of the electric field, wherein the electric field shielding body has an opening portion for allowing the electric field between the substrate and the anode to pass therethrough, and is configured so as to be capable of adjusting an opening size in a first direction of the opening portion and an opening size in a second direction of the opening portion independently of each other.

Abstract: This application relates to a part that includes a metal oxide layer having pore structures. In some embodiments, dye molecules having aromatic rings can be disposed within at least one of the pore structures. Additionally, the at least one pore structures can include dispersion molecules, where the dispersion molecules form non-covalent interactions with the dye molecules. By forming non-covalent interactions between the dye molecules and the dispersion molecules, the aromatic rings of the dye molecules are prevented from forming other non-covalent interactions with other dye molecules. Additionally, techniques for chemically stabilizing the color dye bath for dyeing anodized parts are also described.

Abstract: An apparatus for electroplating which is applicable to the electroplating of workpiece is disclosed. The apparatus includes: an electroplating solution container, a target, an absorbent piece, and a power supply. All the electroplating solution, workpiece, absorbent piece, and target are placed inside the electroplating solution container with at least partial portions of each workpiece, absorbent piece and target submerged in the electroplating solution. The positive electrode of the power supply is electrically connected to the target while its negative electrode is electrically connected to the workpiece and absorbent piece simultaneously. When the power supply imposes a current through the circuit, the target releases metal ions into the electroplating solution and metal ions reduce and a metal coating is formed on the workpiece. In the meantime, carbocations in the electroplating solution are adsorbed on the absorbent piece.

Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

Abstract: Embodiments described herein relate to a lower side wall for use in a processing chamber. a lower side wall for use in a processing chamber is disclosed herein. The lower side wall includes an inner circumference, an outer circumference, a top surface, a plurality of flanges, and a first concave portion. The outer circumference is concentric with the inner circumference. The plurality of flanges project from the inner circumference. The first concave portion includes a plurality of grooves arranged along a circumferential direction of the lower side wall. Each groove has an arc shape such that the plurality of grooves concentrate a gas when the gas contacts the plurality of grooves.