Abstract: An embodiment includes a method and device for forming a multi-qubit chip. The method includes forming a plurality of qubits on a chip, where each qubit comprises a Josephson junction. The method includes annealing one or more Josephson junctions. Annealing is performed by one or more of a plurality of laser emission sources on a planar lightwave circuit. Each of the laser emission sources is located above each qubit.

Abstract: A low-cost magnetostrictive torque sensor having a high sensitivity is obtained. A torque sensor 10 includes a substrate 12, a magnetostrictive portion 26, a magnetostrictive portion 28, a detection coil 18a, a detection coil 18b, a detection circuit 48, and a detection circuit 50. The substrate 12 has a tubular shape. Each of the magnetostrictive portions 26 and 28 is constituted by a plating film and disposed on the outer peripheral surface of the substrate 12. The detection coil 18a generates a magnetic flux passing through the magnetostrictive portion 26. The detection coil 18b generates a magnetic flux passing through the magnetostrictive portion 28. Each of the detection circuits 48 and 50 detects a potential between the detection coil 18a and the detection coil 18b.

Abstract: A piezoelectric ceramic speaker includes a piezoelectric element using a vibration sheet formed with piezoelectric ceramic having a primary phase constituted by ceramic grains of perovskite crystal structure containing Pb, Nb, Zn, Ti, and Zr, and a secondary phase constituted by ZnO grains, wherein the primary phase is constituted by ceramic grains expressed by a composition formula Pb {(Zr(1-a)Tia)x·(Ni1/3Nb2/3)y·(Zn1/3Nb2/3)z}O3 (where 0<x?0.85, 0?y<1, 0<z<1, x+y+z=1, and 0.45?a?0.60); and an enclosure which encloses the piezoelectric element.

Abstract: [Object] An object of the present invention is to provide a method for manufacturing an oxide single crystal substrate having less dispersion in characteristics within the substrate surface. [Means to solve the Problems] In the manufacture method of the present invention, a powder containing a Li compound is dispersed in a medium to form a slurry, and heat is applied while the slurry is in contact with the surface of the oxide single crystal substrate, so as to diffuse Li into the substrate from the surface thereof to effect a modification of the substrate; or after the slurry is brought into contact with the surface of the oxide single crystal substrate, the oxide single crystal substrate is buried in a powder containing the Li compound, and heat is applied to effect the diffusion of Li in the substrate from the surface thereof whereby a modification of the substrate occurs.

Abstract: The invention provides equipment for manufacturing a torque sensor shaft by forming a magnetostrictive region including a metallic glass coating in a predetermined pattern on a side face of a shaft-shaped workpiece. The shaft-shaped workpiece is rotatably attached on a conveying pallet. The conveying pallet is successively conveyed to each of work devices including a preheating device for the shaft-shaped workpiece, a thermal spraying device for forming a metallic glass coating on a side face of the shaft-shaped workpiece, a masking device configured to provide a covering corresponding to the pattern on the coating, and a shot blasting device configured to provide shot blasting directed toward the metallic glass coating including the covering. Preheating, thermal spraying, masking, and shot blasting are performed respectively on the shaft-shaped workpiece while rotating the shaft-shaped workpiece on the conveying pallet at each of the work devices.

Abstract: This spin current magnetization reversal element includes a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction that intersects the stacking direction of the magnetoresistance effect element, and contacts the surface of the magnetoresistance effect element on the side facing the second ferromagnetic metal layer, wherein at least one surface of the second ferromagnetic metal layer in the stacking direction has an inclined surface that is inclined in the first direction, and the direction of magnetization of the second ferromagnetic metal layer is inclined due to the inclined surface.

Abstract: A magnetic sensor is provided which can improve density of magnetoresistance effect elements without narrowing the wiring pitch. A plurality of element array layers 10 are stacked one on another, each of the element array layers including a plurality of magnetoresistance effect elements 1 arranged in parallel in an in-plane direction, and magnetoresistance effect elements 1 in the plurality of element array layers 10 are connected in series to each other.

Abstract: A first conductive layer is patterned and trimmed to form a sub 30 nm conductive via on a first bottom electrode. The conductive via is encapsulated with a first dielectric layer and planarized to expose a top surface of the conductive via. A second conductive layer is deposited over the first dielectric layer and the conductive via. The second conductive layer is patterned to form a sub 60 nm second conductive layer wherein the conductive via and second conductive layer together form a T-shaped second bottom electrode. MTJ stacks are deposited on the T-shaped second bottom electrode and on the first bottom electrode wherein the MTJ stacks are discontinuous. A second dielectric layer is deposited over the MTJ stacks and planarized to expose a top surface of the MTJ stack on the T-shaped second bottom electrode. A top electrode contacts the MTJ stack on the T-shaped second bottom electrode plug.

Abstract: A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.

Abstract: A method for evaluating the thermal effects of 3D RRAM arrays and reducing thermal crosstalk, including the following steps: Step 1: calculating the temperature distribution in the array through 3D Fourier heat conduction equation; Step 2, selecting a heat transfer mode; Step 3, selecting an appropriate array structure; Step 4, analyzing the effect of position of programming device in the array on the temperature; Step 5, analyzing the thermal crosstalk effect in the array; Step 6, evaluating thermal effects and thermal crosstalk; Step 7, changing the array structure or modify operating parameters based on the evaluation results to reduce the thermal crosstalk.

Abstract: A high temperature resistant memristor comprises a bottom electrode, a dielectric and a top electrode, wherein the dielectric is a two-dimensional covalent crystal material or a two-dimensional covalent crystal material doped with oxygen or sulfur which has (1) the two-dimensional covalent crystal material or the two-dimensional covalent crystal material doped with oxygen or sulfur is adopted as the dielectric; (2) a memristor prepared by utilizing relatively high thermal stability of a lattice structure of two-dimensional transition metal; and (3) the high temperature resistant memristor.

Abstract: A semiconductor memory device of an embodiment includes a memory cell array. The memory cell array comprises: a semiconductor layer extending in a first direction; a plurality of conductive layers that face a side surface of the semiconductor layer and are stacked in the first direction; a variable resistance film provided at an intersection of the semiconductor layer and one of the conductive layers; a plurality of contact parts provided at ends of the plurality of conductive layers in a second direction intersecting the first direction, respectively; and a plurality of conductive parts that extend in the first direction and are connected to the plurality of contact parts, respectively. At least one of the plurality of contact parts includes a projection part projecting in the second direction.

Abstract: Methods, systems, and devices for operating memory cell(s) using transition metal doped GST are described. As discussed herein, a composition including germanium (Ge), antimony (Sb), tellurium (Te), and at least one of yttrium (Y) and scandium (Sc) may be used as a memory element in a memory cell. For example, a memory element may include a composition having Ge in an amount ranging from 15 to 35 atomic percent (at. %) of the composition, Sb in an amount less than or equal to 50 at. % of the composition, Te in an amount greater than or equal to 40 at. % of the composition, and at least one of Y and Sc in an amount ranging from 0.15 to 10 at. % of the composition.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.

Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.

Abstract: A process of reacting (SnOx)yZnO(1-y) and a fullerene dopant to produce an electron transport layer. (SnOx)yZnO(1-y) is produced from reacting an organic Zn precursor in the amounts of (1-y); an organic Sn precursor in the amounts of y; and a base in the amount of (1-y) to 1.

Abstract: The invention relates to a process for producing a conjugated polymer blend. The process for producing the conjugated polymer blend comprises the mixture of: a polymer A (X-Y), where X is and Y is and h is a substituent, a polymer B (X-Y?) where X is Y? is and j is a substituent, and an acceptor. In this process h and j are different substituents and independently selected from each other.

Abstract: A carbon nanotube array with equal or other ratio of semiconductive to conductive elements in integrated form including: a plurality of carbon nanotubes arranged in an array, wherein each carbon nanotube includes a semiconducting carbon nanotube segment and a metallic carbon nanotube segment, and the semiconducting carbon nanotube segment and the metallic carbon nanotube segment are connected with each other.

Abstract: An organic light emitting display device includes: an anode electrode; a cathode electrode; an emitting layer disposed between the anode electrode and the cathode electrode; and an electron transport layer disposed between the cathode electrode and the emitting layer, the electron transport layer including a p-type dopant.

Abstract: Solvent or solvent composition for organic transistor production, which is excellent in solubility of an organic semiconductor material, and which can form an organic transistor high in crystallinity. The solvent or solvent composition for organic transistor is a solvent or solvent composition for organic semiconductor material dissolution, and includes a solvent ‘A’ represented by the formula (R1)N(R2)—C(?O)—(R3)N(R4) wherein R1 to R4 are the same or different, and each represents a C1-2 alkyl group, or R1 and R4 may be bound to one another to form a ring together with the —N(R2)—C(?O)—N(R3)— moiety as well as an organic semiconductor material.

Abstract: An organic light emitting diode device including an electron transport layer containing a compound represented by Chemical Formula 1, and an emission layer containing a compound represented by Chemical Formula 2.

Abstract: An embodiment of the present invention provides an organic compound represented by following Formula: wherein each of R1 to R14 is independently selected from hydrogen, substituted or non-substituted C6 to C12 aryl, substituted or non-substituted C3 to C11 heteroaryl, substituted or non-substituted C1 to C10 alkyl, substituted or non-substituted C1 to C10 alkoxy, ether, cyano group (CN), fluorine, tri-fluoro methyl, tri-fluoro methoxy and trimethylsilyl, and at least one of R1 to R10 is the cyano group, and wherein at least one of R11 to R14 is the cyano group, and A is selected from substituted or non-substituted C6 to C30 aryl and substituted or non-substituted C3 to C30 heteroaryl. The present invention also provides an organic light emitting diode and an organic light emitting display device including the organic compound.

Abstract: This invention discloses novel compounds containing a bitriazine building block. These compounds can be used as host materials or electron transporting materials for organic light-emitting devices.

Abstract: An organic EL device includes an anode, an emitting layer, an electron transporting zone and a cathode in this sequence, in which the electron transporting zone contains an aromatic heterocyclic derivative represented by a formula (1) below. In the formula (1), X1 to X3 are a nitrogen atom or CR1, and A is represented by a formula (2) below. In the formula (2), L1 is s single bond or a linking group, and HAr is represented by a formula (3) below. In the formula (3), Y1 is an oxygen atom, a sulfur atom or the like, and one of X11 to X18 is a carbon atom bonded to L1 by a single bond and the rest of X11 to X18 are a nitrogen atom or CR13.

Abstract: The invention relates to compounds of the formula (1) which are suitable for use in electronic devices, in particular organic electroluminescent devices.

Abstract: To provide a light-emitting element with an improved reliability, a light-emitting element with a high current efficiency (or a high quantum efficiency), and a novel dibenzo[f,h]quinoxaline derivative that is favorably used in a light-emitting element which is one embodiment of the present invention. A light-emitting element includes an EL layer between an anode and a cathode. The EL layer includes a light-emitting layer; the light-emitting layer contains a first organic compound having an electron-transport property and a hole-transport property, a second organic compound having a hole-transport property, and a light-emitting substance; the combination of the first organic compound and the second organic compound forms an exciplex; the HOMO level of the first organic compound is lower than the HOMO level of the second organic compound; and a difference between the HOMO level of the first organic compound and the HOMO level of the second organic compound is less than or equal to 0.4 eV.

Abstract: An organic light-emitting device including a first electrode as an anode; a second electrode as a cathode and facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, a hole transport region between the first electrode and the emission layer, and an electron transport region between the emission layer and the second electrode, where at least one selected from the emission layer and the electron transport region includes at least one selected from condensed cyclic compounds represented by Formula 1: A2-(A1)n1.

Abstract: The present invention discloses an organic material represented by the following formula (1) or formula (2), the organic EL device employing the organic compound as light emitting host of emitting lay and/or an electron transporting layer, and/or a hole blocking layer, and/or a delayed fluorescence material of emitting layer can display good performance. wherein A is an electron acceptor moiety, B represents a fused ring hydrocarbon units with two or three rings; m, n, L, and X are the same definition as described in the present invention.

Abstract: A compound having a structure of Formula I: is described. In the structure of Formula I, RA, RB, and RC are each independently 5 or 6 membered aryl or heteroaryl rings; R1, R2, R3, and A are selected from a variety of substituents, including being joined or fused to form a ring; A is optionally bonded to at least one benzo or azabenzo ring to form fused rings; X1 is B, C, N, O, S or Se; and X2-X7 are independently B, C or N. Formulations and devices, such as an OLEDs, that include the compound containing a structure of Formula I are also described.

Abstract: A family of phosphorescent emitter compounds containing a carbene ligand LA selected from the group consisting of: is disclosed. These compounds enhance the performance of OLEDs when incorporated therein.

Abstract: A curved screen attaching device is provided for achieving an attachment between a flexible display layer and a curved cover, and includes: a base platform formed with a curved surface on an upper surface thereof; a magnet layer provided on a bottom of the curved surface and having a plurality of strip-type magnetic field generators disposed independent of each other; an attaching roller magnetically attracted to and moved on the curved surface to process a roll forming on the flexible display layer; and a controller configured to control the strip-type magnetic field generators to be switched on or off to form a moving magnetic field to guide and move the attaching roller.

Abstract: A lighting apparatus of the present disclosure may transport a film formed with a plurality of lighting apparatuses between rolls, and place a mask on an entire surface of the film to deposit an organic light emitting material in a state in which a part of the film is blocked to form an organic light emitting layer, and then deposit a metal layer by the same mask to form a second electrode, wherein the organic light emitting layer and the second electrode are not formed in a region where a pad is formed by the mask to open the pad and connect an external signal source thereto. The first electrode may be connected to a first pad and the second electrode may be connected to a second pad to apply a voltage, wherein a part of the organic light emitting layer is laser-etched to form a contact portion, and the second electrode is electrically connected to the second pad.

Abstract: There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size and/or utilize the side surface of an assembled flexible display.

Abstract: According to an aspect, an organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an emission layer disposed between the first electrode and the second electrode and including a host and a dopant, wherein the host is an exciplex host, which is a combination of a hole transporting host and an electron transporting host which form an exciplex, or a delayed fluorescent organic compound, and the dopant includes both a phosphorescent dopant and a fluorescent dopant.

Abstract: An organic light emitting element includes a first electrode; a first organic layer on the first electrode; a second organic layer on the first organic layer; a second electrode on the second organic layer; and a mixed layer between the first organic layer and the second organic layer. A gap between a highest occupied molecular orbital (HOMO) energy level of the first organic layer and a lowest unoccupied molecular orbital (LUMO) energy level of the second organic layer may be in a range from about 1.35 eV to about 1.70 eV. The mixed layer may emit light having a wavelength in a range from about 740 nm to about 950 nm by exciplex.

Abstract: The present invention provides an organic light-emitting display apparatus where an organic light-emitting device comprises an anode layer, a cathode layer, and an organic light-emitting dielectric layer disposed between the anode layer and the cathode layer; organic light-emitting dielectric layer comprises a hole injection layer, a hole transporting layer, a first mixed layer, an emission layer, an electron transporting layer, and an electron injection layer sequentially disposed; wherein first mixed layer is a mixed material layer consisting of a hole transporting material and an electron transporting material, and first mixed layer is doped with either of a material having an electron blocking function and a material having a hole control function.

Abstract: A light emitting diode including a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; and an electron transporting region positioned between the second electrode and the emission layer, wherein the electron transporting region includes a tellurium compound of a rare earth metal.

Abstract: An organic light emitting device can include first and second electrodes formed to face each other on a substrate; a first stack interposed between the first and second electrode and configured with a hole injection layer, a first hole transportation layer, a first light emission layer and a first electron transportation layer which are stacked on the first electrode; a second stack interposed between the first stack and the second electrode and configured with a second hole transportation layer, a second light emission layer, a third light emission layer and a second electron transportation layer which are stacked on the first stack; a third stack interposed between the second stack and the second electrode and configured with a third hole transportation layer, a fourth light emission layer, a third electron transportation layer and an electron injection layer which are stacked on the second stack; and a first charge generation layer interposed between the first and second stacks and a second charge generati

Abstract: This disclosure provides a quantum dot light-emitting diode comprising a first electron layer, an organic light-emitting layer, a first hole layer, a second electron layer, a quantum dot light-emitting layer, and a second hole layer. The first electron layer and the first hole layer are configured to transport first electrons and first holes to the organic light-emitting layer. The organic light-emitting layer is configured to emit a first light by recombining the first electrons and the first holes. The second electron layer and the second hole layer are configured to transport second electrons and second holes to the quantum dot light-emitting layer. The quantum dot light-emitting layer is configured to emit a second light by recombining the second electrons and the second holes.

Abstract: An OLED display device and a method for manufacturing the OLED display device are provided. The OLED display device comprises a substrate, a first electrode disposed on the substrate, a hole injection layer disposed on the first electrode, an organic light emitting layer disposed on the hole injection layer, an electron injection layer disposed on the organic light emitting layer, and a second electrode disposed on the electron injection layer. A material of the electron injection layer comprises an inorganic electron injecting material and an organic electron transporting material which can be dissolved in a polar solvent. The OLED display device and the method for manufacturing the OLED display device can effectively improve the electron injection efficiency for providing an excellent electron injection effect through the electron injection layer is prepared by a solution in which the inorganic salt material and the organic material were mixed.

Abstract: An organic electroluminescent device and organic electroluminescent display device having enhanced efficiency are disclosed. The organic electroluminescent device includes first and second electrodes facing each other on a substrate, first and second emission layers formed between the first and second electrodes, a hole transport layer formed between the first electrode and the first emission layer, an electron transport layer formed between the second electrode and the second emission layer, and at least one emission control layer formed between the first and second emission layers and having the same properties as those of at least any one of the hole transport layer and the electron transport layer.

Abstract: A light emitting device (10) includes a substrate (100) and a light emitting unit. The light emitting unit includes a first electrode (110), an organic layer (120), and a second electrode (130). The organic layer (120) is located between the first electrode (110) and the second electrode (130). The conductor (180) extends in the first direction (y direction) and at least a portion thereof is in contact with any surface of the first electrode (110). The conductor (180) contains conductive particles and includes a first portion (181) and a second portion (183). The second portion (183) is thicker than the first portion (181). The first portion (181) and the second portion (183) are aligned in the first direction and connected to each other.

Abstract: An organic light emitting display device secures an auxiliary electrode with a sufficient area without forming a passivation layer, an additional planarization film, an additional connection electrode and an auxiliary electrode. Accordingly, manufacturing of a top-emission organic light emitting display device may use three to four fewer masks, thus advantageously simplifying the process and reducing manufacturing costs, the thickness of the organic light emitting display device and the resistance of the second electrode.

Abstract: Provided is an organic light emitting device including an overcoat layer on a substrate, a first electrode disposed on the overcoat layer, an organic light emitting layer disposed on the first electrode and including a convex or concave curve; and a second electrode disposed on the organic light emitting layer.

Abstract: A sealing method of display panel, comprising: forming closed inner sealant layer in a sealing region of a first substrate; forming outer sealant layer which encloses the inner sealant layer, in which a communicating region is provided, the communicating region is configured to communicate a region between the inner sealant layer and the outer sealant layer and a region outside the outer sealant layer; affixing a second substrate to the first substrate in position to form a motherboard; and sealing the communicating region after cutting out the display panel from the motherboard. A display panel and a display device are also disclosed.

Abstract: A display device includes a cover unit and a display panel coupled to the cover unit. The cover unit includes a first base member disposed on the display panel and including a first area and a second area when viewed in a plan view, a pattern layer disposed between the first base member and the display panel, a color layer disposed between the first base member and the pattern layer and having a light transmittance, and a reflective layer disposed between the display panel and the pattern layer.

Abstract: It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.

Abstract: A display device includes a substrate which includes a pixel region and a peripheral region which is provided on at least one side of the pixel region, a plurality of pixels provided in the pixel region, a passivation layer that disposed on the substrate, a light emitting element disposed on the passivation layer and which emits light, and a sealing member which covers the light emitting element. The sealing member includes a first inorganic layer disposed on the light emitting element, a lens portion disposed on the first inorganic layer and which extracts light which is emitted from the light emitting element, an organic layer disposed on the lens portion, and a second inorganic layer disposed on the organic layer.

Abstract: Provided is a display device including: a structure including a display area and a peripheral area surrounding the display area; and an inorganic encapsulation thin film disposed on the display and peripheral areas. The peripheral area includes at least one inorganic surface portion having a closed shape continuously.

Abstract: A substrate processing system and substrate processing method. The substrate processing system includes: a chamber; a susceptor disposed inside the chamber and allowing a substrate to be seated thereon; a mask member disposed over the substrate; and a controller for controlling an arrangement height of the mask member with respect to the substrate. Here, an encapsulation layer covering a device formed on the substrate is formed using the mask member adjusted in height by the controller. The substrate processing method includes disposing a substrate inside a chamber; disposing a mask member over the substrate inside the chamber; and forming an encapsulation layer covering a device formed on the substrate by adjusting an arrangement height of the mask member with respect to the substrate.