Abstract: A display device in one embodiment includes a flexible substrate, a back plate disposed under the flexible substrate to support it, a conductive layer disposed on at least one surface of the back plate, and a printed circuit board connected to one side of the flexible substrate. The conductive layer is electrically connected to the printed circuit board and receives a constant voltage applied thereto. Therefore, by applying the constant voltage to the conductive layer, it is possible to reduce the polarization occurring on the flexible substrate.

Abstract: A pixel array substrate including a substrate, first signal lines, second signal lines, third signal lines, and active devices is provided. The first signal lines, the second signal lines, the third signal lines, and the active devices are disposed on the substrate. Each of the first signal lines has a jumper wire bridge structure which includes a first line and a second line disposed on the same film layer, and a third line disposed on another film layer. The second signal lines intersect the first signal lines and the third signal lines. Each of the second signal lines is electrically connected to one of the first signal lines. Each active device is electrically connected to one second signal line and one third signal line.

Abstract: Disclosed are a display substrate, a manufacture method thereof, and a display device. The display substrate comprises: a base substrate, and a metal layer, at least one insulating layer and a metal oxide conducting layer respectively on the base substrate, wherein, the at least one insulating layer is disposed between the metal layer and the metal oxide conducting layer; the metal oxide conducting layer is electrically connected to the metal layer through at least one via hole penetrating the at least one insulating layer; and the metal oxide conducting layer in the at least one via hole comprises metal particles produced by reducing the metal oxide conducting layer.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

Abstract: A photodetector is provided, including a plurality of optical signal detection units located at each of multiple pixels and configured to generate electric charges corresponding to light being received, and a switch transistor selectively turned on and off so as to transfer the electric charges generated through the plurality of optical signal detection units at each of the multiple pixels, wherein the plurality of optical signal detection units are connected to each other in series.

Abstract: Disclosed herein is a solid state imaging device including a support substrate; an imaging semiconductor chip having a pixel array disposed on the support substrate; and an image processing semiconductor chip disposed on the support substrate, wherein the imaging semiconductor chip and the image processing semiconductor chip are connected by through-vias, and interconnects formed on the support substrate.

Abstract: A method of forming image sensor packages may include performing a molding process. Mold material may be formed either on a transparent substrate in between image sensor dies, or on a removable panel in between transparent substrates attached to image sensor dies. Redistribution layers may be formed before or after the molding process. Mold material may be formed after forming redistribution layers so that the mold material covers the redistribution layers. In these cases, holes may be formed in the mold material to expose solder pads on the redistribution layers. Alternatively, redistribution layers may be formed after the molding process and the redistribution layers may extend over the mold material. Image sensor dies may be attached to a glass or notched glass substrate with dam structures. The methods of forming image sensor packages may result in hermetic image sensor packages that prevent exterior materials from reaching the image sensor.

Abstract: Implementations of semiconductor packages may include: an image sensor; an optically transmissive transparent coating directly coupled to the image sensor; and a glass lid coupled directly coupled to the optically transmissive coating. An entire surface of the glass may be directly coupled to an entire surface of the optically transmissive adhesive coating.

Abstract: A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.

Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.

Abstract: This lensless imaging system comprises a receiving support configured to receive a sample, a light source configured to emit a light beam illuminating the sample in an illumination direction, the light source including a diode and a diaphragm, the diaphragm being positioned between the diode and the receiving support in the lighting direction, and a matrix photodetector configured to acquire at least one image of the sample, each image being formed by radiation emitted by the illuminated sample and including at least one elementary diffraction pattern, the receiving support being positioned between the light source and the matrix photodetector in the illumination direction. The system further comprises a light diffuser positioned between the diode and the diaphragm.

Abstract: An imaging device which does not include a color filter and does not need arithmetic processing using an external processing circuit is provided. A first circuit includes a first photoelectric conversion element, a first transistor, and a second transistor; a second circuit includes a second photoelectric conversion element, a third transistor, and a fourth transistor; a third circuit includes a fifth transistor, a sixth transistor, a seventh transistor, and a second capacitor; the spectroscopic element is provided over the first photoelectric conversion element or the second photoelectric conversion element; and the first circuit and the second circuit is connected to the third circuit through a first capacitor.

Abstract: A pixel cell with a photosensitive region formed in association with a substrate, a color filter formed over the photosensitive region, the color filter comprising a first material layer and a second material layer formed in association with the first shaping material layer.

Abstract: In an embodiment, an image sensor includes a semiconductor substrate, an epitaxial layer disposed over the semiconductor substrate, a first heavily doped region disposed in the epitaxial layer, and a shallow trench isolation region disposed in the epitaxial layer and surrounding the first heavily doped region. The semiconductor substrate and the epitaxial layer are of a first doping type and the semiconductor substrate is coupled to a reference potential node. The first heavily doped region is of a second doping type opposite to the first doping type. The epitaxial layer, the first heavily doped region, and the shallow trench isolation region are part of a p-n junction photodiode configured to operate in the near ultraviolet region.

Abstract: An image sensor includes a substrate including a plurality of pixel regions and having a trench between the pixel regions, a photoelectric conversion part in the substrate of each of the pixel regions, and a device isolation pattern in the trench. The device isolation pattern defines an air gap. The device isolation pattern has an intermediate portion and an upper portion narrower than the intermediate portion.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: A sensor chip includes: a pixel array unit that has a rectangular-shaped area in which a plurality of sensor elements are arranged in an array pattern; and a global control circuit, in which driving elements simultaneously driving the sensor elements are arranged in one direction, and each of the driving elements is connected to a control line disposed for each one column of the sensor elements, that is arranged to have a longitudinal direction to be along a long side of the pixel array unit. For example, the present technology can be applied to ToF sensor.

Abstract: Aspects and examples described herein provide a hybrid imaging sensor chip assembly for reducing undesired radiative transfer between a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit (ROIC) and an optical detector, and methods of manufacturing a hybrid imaging sensor chip assembly. In one example, a hybrid imaging sensor chip assembly includes an optical detector configured to collect electromagnetic radiation incident thereon, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit (ROIC), and a radiation-shielding wafer interposed between the optical detector and the CMOS ROIC, the radiation-shielding wafer including a plurality of through wafer vias (TWVs) electrically coupled to the optical detector and the CMOS ROIC, the radiation-shielding wafer being positioned to prevent radiative transfer between the CMOS ROIC and the optical detector.

Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.

Abstract: An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material to receive light through a first surface of the semiconductor material. At least part of the semiconductor material is curved. A carrier wafer is attached to a second surface, opposite the first surface, of the semiconductor material, and a polymer layer is attached to the carrier wafer, so that the carrier wafer is disposed between the polymer layer and the semiconductor material.

Abstract: Disclosed herein is an apparatus comprising: an array of avalanche photodiodes (APDs), each of the APDs comprising an absorption region and an amplification region; wherein the absorption region is configured to generate charge carriers from a photon absorbed by the absorption region; wherein the amplification region comprises a junction with an electric field in the junction; wherein the electric field is at a value sufficient to cause an avalanche of charge carriers entering the amplification region, but not sufficient to make the avalanche self-sustaining; wherein the junctions of the APDs are discrete.

Abstract: Optoelectronic modules operable to collect distance data and spectral data include demodulation pixels operable to collect spectral data and distance data via a time-of flight approach. The demodulation pixels include regions with varying charge-carrier mobilities. Multi-wavelength electromagnetic radiation incident on the demodulation pixels are separated into different portions wherein the respective portions are used to determine the composition of the incident multi-wavelength electromagnetic radiation. Accordingly, the optoelectronic module is used, for example, to collect colour images and 3D images, and/or ambient light levels and distance data. The demodulation pixels comprise contact nodes that generate potential regions that vary in magnitude with the lateral dimension of the semiconductor substrate. The potential regions conduct the photo-generated charges from the photo-sensitive detection region to a charge-collection region.

Abstract: A multispectral imaging device comprises a hybrid semiconductor device of stacked type to separate different light wavebands in a three-dimensional space, said hybrid semiconductor device comprises: a first photodiode, to convert NIR light photons to electrons, said first photodiode forming a detecting array of infrared light image, said first photodiodes comprising a substrate and an depletion layer; and a second photodiode, arranged on said first photodiode, to convert visible light photons to electrons, said second photodiode forming a detecting array of visible light image. The multispectral imaging device provided by the present disclosure decreases the cross-talk between different photodiodes and increases the total performance.

Abstract: A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.

Abstract: A method for manufacturing a light emitting diode (LED) display includes providing a template having keyed holes disposed in the template, depositing keyed LED's onto the template manipulating the keyed LED's such that each of the keyed LED's fits within a corresponding keyed hole in the template, and transferring the keyed LED's onto a circuit board.

Abstract: Variable resistance memory devices are provided. A variable resistance memory device includes a memory cell that includes a switching device and a resistance sensing element that is connected in series with the switching device. The variable resistance memory device includes a word line that extends in a first direction and that is connected to a gate of the switching device. Moreover, the variable resistance memory device includes a plurality of bit lines extending in a second direction. A first connection node of a first bit line among the plurality of bit lines is electrically connected to the resistance sensing element. A second connection node of a second bit line, among the plurality of bit lines, adjacent the first bit line is electrically connected to the switching device.

Abstract: Approaches for an interconnect cladding process for integrating magnetic random access memory (MRAM) devices, and the resulting structures, are described. In an example, a memory structure includes an interconnect disposed in a trench of a dielectric layer above a substrate, the interconnect including a diffusion barrier layer disposed at a bottom of and along sidewalls of the trench to an uppermost surface of the dielectric layer, a conductive fill layer disposed on the diffusion barrier layer and recessed below the uppermost surface of the dielectric layer and an uppermost surface of the diffusion barrier layer, and a conductive capping layer disposed on the conductive fill layer and between sidewall portions of the diffusion barrier layer. A memory element is disposed on the conductive capping layer of the interconnect.

Abstract: There are provided a memory device and a memory unit that make it possible to improve retention property of a resistance value in low-current writing. The memory device of the technology includes a first electrode, a memory layer, and a second electrode in order, in which the memory layer includes an ion source layer containing one or more transition metal elements selected from group 4, group 5, and group 6 in periodic table, one or more chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or both of boron (B) and carbon (C), and a resistance change layer having resistance that is varied by voltage application to the first electrode and the second electrode.

Abstract: A multi-level synaptic weight device having a 3D vertical cross-point structure according to an embodiment includes a multi-level conductance structure configured to couple any one of multiple word lines to any one of multiple bit lines. The conductance structure may include a multiplexer, configured to include multiple selector switches coupled in parallel to the word line and to select any one of the multiple parallel-coupled selector switches in response to an externally applied selection signal; a fixed resistor block including multiple fixed resistors coupled to the bit line; a cross-point block configured such that the multiple selector switches in the multiplexer and the multiple fixed resistors in the fixed resistor block intersect in a matrix form so as to be coupled to each other and each of the selector switches in the multiplexer has a unique number of cross-points; and a conductive plate on the fixed resistor block.

Abstract: According to one embodiment, a storage device includes a first wiring extending in a first direction, a second wiring connected to the first wiring and extending in a second direction, which crosses the first direction, a third wiring extending in a third direction, which crosses the second direction, and a first variable resistance film connected to the second wiring and the third wiring. The third wiring includes a first portion that extends in the third direction and a second portion that protrudes from a side surface of the first portion toward the second wiring and that has an end surface connected to the first variable resistance film.

Abstract: The invention relates to a radiation-emitting device (600), which comprises a substrate (100), an inner optoelectronic component (300) and an outer optoelectronic component (200) which at least partially laterally surrounds the inner optoelectronic component (300). Further, the radiation-emitting device (600) has a cover element (500) which is arranged on the optoelectronic components (200, 300) and comprises a first contact element (521), connected to a first electrode surface of the inner optoelectronic component (300) in an electrically conductive manner, and a second contact element (522) connected to a second electrode surface of the inner optoelectronic component (300) in an electrically conductive manner.

Abstract: A light-emitting display apparatus includes a substrate, a first pixel electrode, a second pixel electrode, a first electroluminescent layer, and a second electroluminescent layer. The substrate includes a first region adjacent to a second region. The first pixel electrode overlaps the first region. The first pixel electrode includes a first transparent conductive layer. The second pixel electrode overlaps the second region. The second pixel electrode includes a second transparent conductive layer. The first electroluminescent layer is disposed on the first pixel electrode. The first electroluminescent layer is configured to emit light in a first range of wavelengths. The second electroluminescent layer is disposed on the second pixel electrode. The second electroluminescent layer is configured to emit light in a second range of wavelengths different from the first range of wavelengths.

Abstract: A silicon-based OLED image transceiving device includes a substrate, multiple photodiodes for sensing light, and multiple OLEDs for emitting light. The OLED includes a metal interconnect anode, a hole transport layer, an organic light emitting layer, an electronic transport layer, and a transparent cathode layer. The hole transport layer, the organic light emitting layer, the electronic transport layer, and the transparent cathode layer are sequentially formed on the metal interconnect anode. The organic light emitting layer is only located on an area corresponding to the metal interconnect anode, and does not extend to an area corresponding to the photodiode. The multiple photodiodes and organic light emitting layers of the multiple OLEDs are arranged to form a pixel matrix of the image transceiving device. The silicon-based OLED image transceiving device has relatively high sensitivity of the photodiode.

Abstract: An organic light-emitting device includes a substrate, a first electrode layer, a light-emitting layer, and a second electrode arranged in layers. The light-emitting layer includes primary pixels, each of which includes three or more subpixels. One of the subpixels is a white subpixel. The other subpixels includes a basic subpixel which has a light-emitting material necessary to synthesize the white light. The basic subpixels includes an original color zone and a synthesized color zone. The light-emitting material for the synthesized white light corresponding to the synthesized color zone of the basic subpixels and another kind of light-emitting material for the synthesized white light are layered or mixed to form the subpixel with the white light. The brightness and color of the image is enhanced, power consumes less, and the life span of the organic light-emitting device is extended.

Abstract: According to one embodiment, an organic EL device includes an insulating substrate including a first main surface and a second main surface, a switching element formed on the insulating substrate at the first main surface side, a first electrode electrically connected to the switching element, a second electrode opposed to the first electrode, an organic luminescent layer disposed between the first electrode and the second electrode, a reflective plate disposed between the insulating substrate and the first electrode, and a conductive film covering the second main surface of the insulating substrate.

Abstract: Disclosed are an organic light emitting display having touch sensors, which may achieve process simplification and cost reduction, and a method of fabricating the same. The organic light emitting display includes a plurality of touch electrodes disposed on an encapsulation unit disposed so as to cover light emitting elements, the touch electrodes are formed through a low-temperature deposition process and may thus have amorphous characteristics so as to prevent damage to an organic light emitting layer during formation of the touch electrodes, and the touch electrodes are disposed on the encapsulation unit without a separate attachment process and may thus simplify the overall process and reduce manufacturing costs.

Abstract: Provided is an organic light emitting display module including an active area, a pad area, and a boundary area between the active area and the pad area. Unlike the active area and the pad area, since the boundary area does not include an inorganic layer, less stress is applied to the boundary area when the boundary area is bent. Display panel pads and touch sensing member pads are disposed at the same height without having a height difference therebetween. Thus, a dummy pad may be added to remove the height difference between the display panel pads and the touch sensing member pads.

Abstract: Disclosed are an organic light-emitting display panel and an electronic device. The organic light-emitting display panel comprises a first substrate; the first substrate comprises a plurality of pressure-sensitive detection structures and a plurality of light-sensitive identification structures provided in an array, the pressure-sensitive detection structure comprises a semiconductor material film, the light-sensitive identification structure comprises a light-sensitive identification switch, the light-sensitive identification switch comprises a first active layer, and the semiconductor material film and the first active layer are provided on the same layer.

Abstract: Forming functional layers including functional material in application regions by applying ink to the application regions then drying the ink, which contains the functional material, by causing nozzles to be scanned relative to the substrate along the row direction while, among the nozzles, only use-nozzles that are not selected as a defective nozzle eject the ink, the nozzles being arranged in the column direction over the substrate and including a nozzle selected in advance as a defective nozzle. Among the nozzles, when applying the ink, at least one reserve nozzle is present, a reserve nozzle being a nozzle that is not one of the use-nozzles, is not selected as the defective nozzle, passes over the application region, and does not eject the ink.

Abstract: An organic light emitting display device is disclosed. The organic light emitting display device includes a first sub-pixel that includes a first emission region which makes a first color, a second sub-pixel that is disposed adjacent to the first sub-pixel, and includes a second emission region which makes a second color, a third sub-pixel that is disposed adjacent to the first sub-pixel, and includes a third emission region which makes a third color, and a fourth sub-pixel that is disposed adjacent to the second sub-pixel and the third sub-pixel, and includes a fourth emission region which makes a fourth color. At least one of the first to fourth sub-pixels includes a transmission region which cannot emit light and through which external light is transmitted. The transmission region is surrounded by at least one of the first to fourth emission regions.

Abstract: An organic light emitting display device includes a substrate including a plurality of pixels defined thereon; a first electrode disposed at each pixel; a bank exposing the first electrode of each pixel; a spacer including, sequentially on the bank, a first layer of a first negative photoreactive acryl and a second layer of a second negative photoreactive acryl having a greater photoreactivity than a photoreactivity of the first negative photoreactive acryl, wherein the first layer has a negative taper and the second layer has a positive taper; an organic layer on the bank and the first electrode, the organic layer including an organic light emitting layer; and a second electrode on the bank, the spacer, and the organic layer.

Abstract: A display device including a substrate including an emitting region and a non-emitting region; an auxiliary electrode disposed in the non-emitting region; a first passivation film covering the emitting region and the auxiliary electrode in the non-emitting region and including a first passivation hole exposing the auxiliary electrode; an overcoat layer disposed on the first passivation film and includes an over-hole exposing the auxiliary electrode; a first barrier layer disposed on the first passivation film and the overcoat layer and contacting the auxiliary electrode; a second passivation film disposed on the first barrier layer and including a second passivation hole exposing the first barrier layer; a bank layer disposed on the second passivation film and including a bank hole exposing the first barrier layer and having an undercut structure; an organic layer disposed on the bank layer and disconnected by the undercut structure; and a second electrode disposed on the organic layer and contacting the firs

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

Abstract: A display panel includes an array substrate including a base substrate and a drive unit; a light-emitting functional layer placed on one side of the drive unit and electrically connected with the drive unit; a sealing film layer placed on one side of the light-emitting functional layer; and a polarization functional layer placed on a light output side of the display panel. The polarization functional layer includes a coated polarization layer. Compared with the prior art, the display panel includes less film layers, and layers of the display panel are thinner, which facilitates the thin-type design. In addition, the method for making a display panel is simple, a production cost is low, and a production efficiency is high, which is good for a large-scale production application.

Abstract: Provided is a display device, including: a substrate; signal lines including a gate line, a data line, and a driving voltage line that collectively define an outer boundary of a pixel area; a transistor connected to the signal line; a first electrode extending across the pixel area and formed on the signal line and the transistor, and connected to the transistor, the first electrode having a first portion overlying only the signal line and the transistor, and a second portion comprising all of the first electrode not included in the first portion; a pixel defining layer formed on only the first portion of the first electrode; an organic emission layer formed on substantially the entire second portion but not on the first portion; and a second electrode formed on the pixel defining layer and the organic emission layer.

Abstract: A display device includes a through portion passing through a display layer. The display includes a plurality of scan lines above the substrate and extending in a first direction, a plurality of data lines extending in a second direction, and a plurality of pixels connected to the scan lines and data lines. The data lines include a first data line and a second data line disconnected by the through portion, and a third data line spaced apart from the through portion along the first direction. The first data line is electrically connected with the third data line.

Abstract: A pixel structure including a substrate, a power wire, a planarization layer, a drive circuit and a conductive structure is provided. The substrate has a layout area and a light-transmitting area located outside the layout area. The power wire is disposed on the layout area of the substrate. The power wire includes a shielding layer. The planarization layer is disposed on the substrate and covers the power wire. The drive circuit is disposed on the planarization layer and corresponds to the layout area. The drive circuit includes a first active device. The shielding layer overlaps with the first active device. The conductive structure is disposed in the planarization layer and distributed corresponding to the layout area. The power wire is electrically connected with the drive circuit through the conductive structure. A display panel is also provided.

Abstract: According to one embodiment, a display device includes an insulating substrate having a display area, a pad area and a bend area, wiring lines, a first protective film and a second protective film. The wiring lines are elongated from the display area to the pad area. The first protective film is located on the insulating substrate and the wiring lines. The second protective film is located on the first protective film and is formed of an organic insulating material different from that of the first protective film.

Abstract: The present disclosure provides a flexible display panel including a display area and a non-display area, and a bending area is arranged therebetween. The flexible display panel further includes a flexible substrate and a thin film transistor layer. The thin film transistor layer includes a semi-conductor layer, a gate electrode insulation layer, a gate electrode layer, an insulation interlayer and a source-drain electrode metal layer. The flexible display panel includes a touch layer arranged on one side of the thin film transistor layer away from the flexible substrate. The touch layer includes a first and second touch metal layer. The flexible display panel further includes signal transmission lines including at least two parallel wiring layers in the bending area. Each wiring layer is fabricated in a same layer with at least two of the source-drain electrode metal layer, the first touch metal layer, and the second touch metal layer.

Abstract: A capacitor structure may include a lower conducting layer (e.g., poly 1 layer) and an upper conducting layer (e.g., overlying poly 2 layer), which define an anode and cathode, and a dielectric layer (e.g., an ONO layer stack) located between the upper conducting layer and the lower conducting layer, wherein a portion of the dielectric layer (e.g., at least the nitride layer of the ONO layer stack) extends beyond a lateral edge of the upper conducting layer. A method forming such capacitor structure may utilize a spacer adjacent the lateral edge of the upper conducting layer and over the first portion of the dielectric layer, performing an etch to remove a first portion of the dielectric layer but protect a second portion located below the spacer and extending laterally beyond an edge of the upper conducting layer.