Patents Issued in February 1, 2024
  • Publication number: 20240038898
    Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a gate insulating layer, agate electrode, a first insulating layer, a second insulating layer, and a conductive layer. The gate insulating layer is in contact with a top surface and a side surface of the semiconductor layer, and the gate electrode includes a region overlapping with the semiconductor layer with the gate insulating layer therebetween. The first insulating layer contains an inorganic material and is in contact with a top surface of the gate insulating layer and a top surface and a side surface of the gate electrode. The gate insulating layer and the first insulating layer include a first opening in a region overlapping with the semiconductor layer.
    Type: Application
    Filed: December 1, 2021
    Publication date: February 1, 2024
    Inventors: Masami JINTYOU, Takahiro IGUCHI, Rai SATO
  • Publication number: 20240038899
    Abstract: It is an object to provide a highly reliable thin film transistor with stable electric characteristics, which includes an oxide semiconductor film. The channel length of the thin film transistor including the oxide semiconductor film is in the range of 1.5 ?m to 100 ?m inclusive, preferably 3 ?m to 10 ?m inclusive; when the amount of change in threshold voltage is less than or equal to 3 V, preferably less than or equal to 1.5 V in an operation temperature range of room temperature to 180° C. inclusive or ?25° C. to 150° C. inclusive, a semiconductor device with stable electric characteristics can be manufactured. In particular, in a display device which is an embodiment of the semiconductor device, display unevenness due to variation in threshold voltage can be reduced.
    Type: Application
    Filed: October 5, 2023
    Publication date: February 1, 2024
    Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Hiromichi GODO
  • Publication number: 20240038900
    Abstract: A thin-film transistor (TFT) having a vertical structure and an electronic device are provided. The TFT having the vertical structure includes an insulating substrate and an active layer disposed on the insulating substrate. The active layer includes a first conductive part, an active section, and a second conductive part which are stacked. An orthographic projection of the first conductive part on the insulating substrate partly overlaps an orthographic projection of the second conductive part on the insulating substrate. Therefore, contamination ions may be prevented from entering the active section from the insulating substrate during manufacturing processes of the TFT. Thus, reliability of performance of the TFT may be improved.
    Type: Application
    Filed: October 28, 2022
    Publication date: February 1, 2024
    Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Zhifu Li, Guanghui Liu, Fei Ai, Dewei Song, Chengzhi Luo
  • Publication number: 20240038901
    Abstract: A device includes: a first stack of nanostructures; a second stack of nanostructures horizontally offset from the first stack; a first source/drain region abutting the first stack of nanostructures; a second source/drain region abutting the second stack of nanostructures; a wall structure between the first and second stacks and spaced apart from the nanostructures of the first stack; and a first gate structure, which includes: a gate dielectric layer that wraps around the nanostructures of the first stack; and a conductive core layer on the gate dielectric layer, wherein thickness of the conductive core layer between one of the nanostructure of the first stack and the wall structure is in a range of 0 nanometers to 1 nanometer, inclusive.
    Type: Application
    Filed: February 16, 2023
    Publication date: February 1, 2024
    Inventors: Kuan-Ting PAN, Kuo-Cheng CHIANG, Shi Ning JU, Chih-Hao WANG
  • Publication number: 20240038902
    Abstract: The disclosure provides a driving thin film transistor and a switching thin film transistor each using an oxide semiconductor pattern as an active layer thereof. The driving thin film transistor and the switching thin film transistor include light shielding patterns, respectively. Each light shielding pattern includes a semiconductor material layer doped with P-type impurity ions. By virtue of the light shielding patterns including the semiconductor material layer, the driving thin film transistor and the switching thin film transistor achieve an increase in threshold voltage, thereby securing freedom of design.
    Type: Application
    Filed: July 31, 2023
    Publication date: February 1, 2024
    Inventors: Sung Ju CHOI, Young Hyun KO, Chan Yong JEONG, Jung Seok SEO, Jae Yoon PARK, Seo Yeon IM, Jin Won JUNG
  • Publication number: 20240038903
    Abstract: Provided are two-dimensional material (2D)-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices. A 2D material-based field effect transistor includes a substrate; first to third 2D material layers on the substrate; an insulating layer on the first 2D material layer; a source electrode on the second 2D material layer; a drain electrode on the third 2D material layer; and a gate electrode on the insulating layer. The first 2D material layer is configured to exhibit semiconductor characteristics, and the second and third 2D material layers are metallic 2D material layers. The first 2D material layer may include a first channel layer of a 2D material and a second channel layer of a 2D material. The first 2D material layer may partially overlap the second and third 2D material layers.
    Type: Application
    Filed: October 9, 2023
    Publication date: February 1, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Minsu SEOL, Hyeonjin SHIN, Minseok YOO, Minhyun LEE
  • Publication number: 20240038904
    Abstract: A semiconductor structure includes a capacitor structure comprising an active region comprising opposing field edges parallel to a first horizontal direction and a gate region comprising opposing gate edges parallel to a second horizontal direction transverse to the first horizontal direction. The semiconductor structure also comprises a first dielectric material adjacent at least one of the opposing field edges or the opposing gate edges and a second dielectric material adjacent the active area and abutting portions of the first dielectric material. A height of the second dielectric material in a vertical direction may be less than the height of the first dielectric material. Semiconductor devices and related methods are also disclosed.
    Type: Application
    Filed: October 10, 2023
    Publication date: February 1, 2024
    Inventor: Michael A. Smith
  • Publication number: 20240038905
    Abstract: A light sensor having a voltage reversing mechanism is provided. A photoelectric component converts a first light signal into a first photocurrent. A capacitor is charged to a first voltage by the first photocurrent. A counter counts a first coarse count value according to the first voltage. The photoelectric component converts a second light signal into a second photocurrent. The capacitor is charged from a reversed first voltage to a second voltage by the second photocurrent. The counter counts a second coarse count value according to the second voltage. The counter counts a fine count value according to the second coarse count value. One of the first light signal and the second light signal is emitted by both of an ambient light source and a light-emitting component and then reflected by a tested object, and the other one of them is emitted by only the ambient light source.
    Type: Application
    Filed: October 21, 2022
    Publication date: February 1, 2024
    Inventors: Jia-Hua Hong, CHIH-YUAN CHEN
  • Publication number: 20240038906
    Abstract: Bendable Materials for Electromagnetic Interference Shielding and Detection of Infrared and Visible Radiation
    Type: Application
    Filed: July 31, 2023
    Publication date: February 1, 2024
    Applicant: UNM Rainforest Innovations
    Inventors: Francesca Cavallo, Emma Renteria
  • Publication number: 20240038907
    Abstract: A substrate includes first and second sides, the first side being flat, the second side including upper and lower sides, the lower side protruding from the upper side to form a step. An optical function layer is on a top of the substrate, the optical function layer including first and second end faces, the first end face being flush with the first side, the second end face being flush with the upper side of the second side. A first film continuously covers the first end face and the first side. A second film is different in reflectance from the first film, the second film continuously covering the second end face and the upper side. A first electrode is electrically connected to a top of the optical function layer. A second electrode is electrically connected to a bottom of the optical function layer.
    Type: Application
    Filed: December 23, 2022
    Publication date: February 1, 2024
    Inventors: Shuhei ONO, Takayuki NAKAJIMA
  • Publication number: 20240038908
    Abstract: A photo sensor cell includes a semiconductor body having a well region of a first conductivity type and at least one base region of a second conductivity type different from the first conductivity type. The photo sensor cell also includes a well electrode electrically contacting the well region and a base electrode electrically contacting the base region. The photo sensor cell further includes a collection gate electrode located on top of the well region next to the base region and, seen in top view of the collection gate electrode, at least partially surrounding the base region. The collection gate electrode includes at least one gate extension running away from the base region and terminating within the semiconductor body, seen in top view of the collection gate electrode.
    Type: Application
    Filed: December 8, 2021
    Publication date: February 1, 2024
    Inventor: Rajesh GUPTA
  • Publication number: 20240038909
    Abstract: A method for producing a solar cell, including the following steps: a) providing a substrate having a front side and a back side in a deposition apparatus, and b) coating the substrate in situ with two layers, including b1) oxidizing, by exposing the substrate to an oxygen-containing gas and a first plasma, to create an oxide layer and b2) subsequently depositing a silicon layer or SiC layer by exposure to a gas containing silicon, an optional gas containing carbon and a second plasma, wherein step b) is carried out under vacuum in the deposition apparatus and the vacuum is maintained continuously during step b).
    Type: Application
    Filed: July 21, 2021
    Publication date: February 1, 2024
    Inventors: Axel SCHWABEDISSEN, Matthias JUNGHÄNEL, Kyung Hun KIM, Fabian FERTIG
  • Publication number: 20240038910
    Abstract: An electrode structure of a solar cell includes an electric conductor on a substrate side of a chalcogen solar cell, and a wiring element to be electrically connected with the electric conductor. The wiring element is stacked on and bonded with the electric conductor. The melting point of the wiring element is equal to or higher than 230° C., and the electric conductor in the region corresponding to the wiring element includes a part of the metal element of the wiring element.
    Type: Application
    Filed: December 21, 2021
    Publication date: February 1, 2024
    Applicant: IDEMITSU KOSAN CO.,LTD.
    Inventors: Yoshihide MIYAGAWA, Kazuhito FUKASAWA, Mikio HAMANO, Kyohei HORIGUCHI, Koji YAMAGUCHI
  • Publication number: 20240038911
    Abstract: Methods, devices, and systems are described for a flip-chip solar cell. The flip-chip solar cell includes a plurality of semiconductor layers having a first side and a second side. The plurality of semiconductor layers are configured to convert solar radiation to electrical energy. The flip-chip solar cell includes a coverglass layer coupled to the second side via a bond. The coverglass layer is configured to pass the solar radiation to the plurality of semiconductor layers and provide structural support for the plurality of semiconductor layers flip-chip solar cell. The flip-chip solar cell includes a first electrode pad and a second electrode pad coupled to the first side and electrically coupled to the plurality of semiconductor layers. The coverglass layer is thicker than the plurality of semiconductor layers. No metal layer is interposed between the plurality of semiconductor layers and the coverglass layer.
    Type: Application
    Filed: July 26, 2023
    Publication date: February 1, 2024
    Inventors: Michael Bergmann, Brian Anthony, Matthew Johnson
  • Publication number: 20240038912
    Abstract: A film comprising a set of layers including a first layer, a third layer and a second layer therebetween is described. The first layer comprises and/or is a transparent conductive oxide, TCO, having a formula: A1B1O3-?1; The third layer comprises and/or is a transparent wide-bandgap semiconductor oxide having a formula: A3B303-?3; The second layer comprises and/or is an oxide layer having a formula: A1?A31-?B1O3-?2 or A1?A31-?B3O3-?2 or A3B1?B31-?O3-?2 or A1?A31-?B1?B31-?O3-?2; wherein 0<?, ?<1, ?0.5??1, ?2, ?3?0.5.
    Type: Application
    Filed: November 30, 2021
    Publication date: February 1, 2024
    Inventors: Jessica STONER, Jonathon ALARIA, Matthew ROSSEINSKY
  • Publication number: 20240038913
    Abstract: The present technology relates to a light receiving element, a distance measuring system, and an electronic device capable of reducing unintended edge breakdown in a case where a pixel is miniaturized. A light receiving element includes a pixel that includes a PN junction region in which a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type opposite to the first conductivity type are joined, and a third semiconductor region of the first conductivity type that is not connected to any wiring outside the first semiconductor region near a first surface of a substrate on which a wiring that supplies a predetermined power supply voltage to the first semiconductor region is formed. The present technology can be applied to, for example, a distance measuring sensor that receives reflected light and measures a distance, and the like.
    Type: Application
    Filed: November 10, 2021
    Publication date: February 1, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Katsuhisa TANAKA, Yusuke OTAKE
  • Publication number: 20240038914
    Abstract: The invention relates to an apparatus, system and method for a doubly curved panel with a light emitting element, such as for a body panel of an automobile. Also described is a doubly curved solar panel with doubly curved solar cells and a light emitting element. The light emitting element may be of the LED or electroluminescent type and be embedded in the solar panel while remaining electrically decoupled from the solar array. The solar panel comprises doubly-curved substrate and superstrate preforms and at least one rigid layer. The preforms may comprise one or more strengthened glass and/or polymer layers. Polymer preforms may be formed by flat lamination followed by thermoforming. A core comprising lower and upper encapsulant layers sandwiching the light emitting element and solar cell array is disposed between substrate and superstrate preforms forming a lamination stack which is then subjected to a lamination process.
    Type: Application
    Filed: July 23, 2023
    Publication date: February 1, 2024
    Applicant: APTERA MOTORS CORP.
    Inventors: Anuj M. THAKKAR, Jesse H. WOOD
  • Publication number: 20240038915
    Abstract: An assembly of solar cells is provided with a connection structure arranged opposite and between a peripheral zone of a first solar cell and a second peripheral zone of a second solar cell. The connection structure provides increased mechanical flexibility and includes an oblong conductive portion and a set of conductive blocks distributed over the oblong conductive portion, alternately over a first region of the oblong conductive portion and over a second region of the oblong conductive portion opposite the first region.
    Type: Application
    Filed: July 26, 2021
    Publication date: February 1, 2024
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Bertrand CHAMBION
  • Publication number: 20240038916
    Abstract: A solar cell and a photovoltaic module are provided. The solar cell includes a substrate having a front side and a back side, a plurality of front main busbars and a plurality of front finger electrodes, each front finger electrode being electrically connected with the plurality of front main busbars, the number of the plurality of front main busbars is 6 to 20, and a plurality of back main busbars and a plurality of back finger electrodes, each back finger electrode is electrically connected with the plurality of back main busbars, the number of the plurality of the back main busbars is 6 to 20. For each of at least one of the plurality of front main busbars, the front main busbar has 4 to 10 first solder pads.
    Type: Application
    Filed: October 12, 2023
    Publication date: February 1, 2024
    Inventors: Guohui HAO, Shiliang HUANG, Ningbo ZHANG, Hengshuo ZHANG
  • Publication number: 20240038917
    Abstract: A controlling device has at least a light-based energy harvesting system disposed within the controlling device housing. The light-based energy harvesting system is operative to supply power to at least one of a processing device and a transmitter of the controlling device. The light-based energy harvesting system includes s a substrate having a photovoltaic (PV) active area and a lens, separate from the substrate, disposed over the PV active area.
    Type: Application
    Filed: October 5, 2023
    Publication date: February 1, 2024
    Inventors: Rex Xu, Ara Ghrapetian
  • Publication number: 20240038918
    Abstract: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
    Type: Application
    Filed: August 23, 2023
    Publication date: February 1, 2024
    Inventors: Myles Aaron STEINER, Daniel Joseph FRIEDMAN, Ryan Matthew FRANCE, Asegun HENRY
  • Publication number: 20240038919
    Abstract: A photodetector includes a substrate, an optical absorber, a first doped region, a second doped region, and a third doped region. The optical absorber is disposed in the substrate and includes a first region and a second region. The first doped region is disposed in the substrate such that the first doped region contacts the second region of the optical absorber. The second doped region is disposed in the substrate such that the second doped region contacts the second region of the optical absorber. The second region of the optical absorber is positioned between the first doped region and the second doped region. The third doped region is disposed in the substrate and has an opposite doping relative to the first doped region and the second doped region. The first region of the optical absorber is positioned between the third doped region and the second region of the optical absorber.
    Type: Application
    Filed: July 26, 2022
    Publication date: February 1, 2024
    Inventors: Gianlorenzo MASINI, Kam Yan HON, Fatemeh REZAEIFAR BAYAT
  • Publication number: 20240038920
    Abstract: A photodetector includes a substrate, a first optical absorber, and a second optical absorber. The first optical absorber is disposed in the substrate along a direction of propagation of an optical signal through the substrate. The first optical absorber is offset in the substrate according to an offset of the optical signal in a direction orthogonal to the direction of propagation. The second optical absorber is disposed in the substrate along the direction of propagation of the optical signal. The second optical absorber is offset in the substrate according to the offset of the optical signal in the direction orthogonal to the direction of propagation.
    Type: Application
    Filed: July 29, 2022
    Publication date: February 1, 2024
    Inventors: Fatemeh REZAEIFAR BAYAT, Kam Yan HON, Attila MEKIS, Gianlorenzo MASINI
  • Publication number: 20240038921
    Abstract: A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.
    Type: Application
    Filed: October 12, 2023
    Publication date: February 1, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Ya-Chin KING, Chrong Jung LIN, Burn Jeng LIN, Shi-Jiun WANG
  • Publication number: 20240038922
    Abstract: A lens array includes, on a surface which belongs to the lens array and which faces a flat surface of a base, a plurality of adhesive surfaces located side by side in a direction in which a plurality of lens elements is arranged in parallel, and includes an interference suppression portion for an adhesive between adjacent adhesive surfaces among the plurality of adhesive surfaces, and a plurality of adhesive layers is provided which glues the plurality of adhesive surfaces of the lens array to the flat surface of the base and thereby fixes the lens array to the flat surface of the base.
    Type: Application
    Filed: October 13, 2023
    Publication date: February 1, 2024
    Applicant: Mitsubishi Electric Corporation
    Inventor: Junichi SUZUKI
  • Publication number: 20240038923
    Abstract: A method for improving alignment between a selective emitters and metal printing, including: providing silicon wafer including first edge and midline parallel to the first edge; texturing and diffusing surface of the silicon wafer; and illuminating the surface of the silicon wafer by laser spots to form the SE. Multiple laser spots are arranged between the first edge and the midline to form spot rows, extension directions of the spot rows are parallel to the first edge, M spot rows are arranged and M is a positive integer and M>1. The M spot rows include N sub-spot regions, N is a positive integer and 1<N?M, the sub-spot regions include at least one spot row, and areas of the laser spots in each sub-spot region are equal. The areas of the laser spots in different sub-spot regions from the midline pointing to the first edge gradually increases.
    Type: Application
    Filed: October 18, 2022
    Publication date: February 1, 2024
    Inventors: Zhiliang FEI, Ning ZHANG, Yankai QIU, Fangyan LUO
  • Publication number: 20240038924
    Abstract: The invention relates to a display element and to a manufacturing method. The display element comprises a first conductor layer having a first active conductor element and a second conductor layer having a second active conductor element. The display element comprises first and second dielectric layers and an emissive layer. The first conductor layer comprises a first active electrical lead connected to the first active conductor element and the second conductor layer comprises a first passive electrical lead separate from the second active conductor element. One or more first electrical through leads extend between the first active electrical lead and the first passive electrical lead through the first and second dielectric layers and the emissive layer.
    Type: Application
    Filed: September 16, 2021
    Publication date: February 1, 2024
    Inventors: Mika Karhunen, Jukka Lammi, Pertti Malvaranta
  • Publication number: 20240038925
    Abstract: A semiconductor light-emitting element includes: an n-type clad layer of an n-type AlGaN-based semiconductor material; an active layer including a planarizing layer of an AlGaN-based semiconductor material provided on the n-type clad layer, a barrier layer of an AlGaN-based semiconductor material provided on the planarizing layer, and a well layer of an AlGaN-based semiconductor material provided on the barrier layer; and a p-type semiconductor layer provided on the active layer. The active layer emits deep ultraviolet light having a wavelength of 360 nm or shorter, and a ground level of a conduction band of the planarizing layer is lower than a ground level of a conduction band of the barrier layer and higher than a ground level of a conduction band of the well layer.
    Type: Application
    Filed: October 13, 2023
    Publication date: February 1, 2024
    Inventors: Mitsugu WADA, Shinya FUKAHORI
  • Publication number: 20240038926
    Abstract: A semiconductor light-emitting element includes: an n-type clad layer of an n-type AlGaN-based semiconductor material; an active layer including a planarizing layer of an AlGaN-based semiconductor material provided on the n-type clad layer, a barrier layer of an AlGaN-based semiconductor material provided on the planarizing layer, and a well layer of an AlGaN-based semiconductor material provided on the barrier layer; and a p-type semiconductor layer provided on the active layer. The active layer emits deep ultraviolet light having a wavelength of 360 nm or shorter, and a ground level of a conduction band of the planarizing layer is lower than a ground level of a conduction band of the barrier layer and higher than a ground level of a conduction band of the well layer.
    Type: Application
    Filed: October 13, 2023
    Publication date: February 1, 2024
    Inventors: Mitsugu WADA, Shinya FUKAHORI
  • Publication number: 20240038927
    Abstract: A colour conversion resonator system, comprising: a first partially reflective region configured to transmit light of a first primary peak wavelength and to reflect light of a second primary peak wavelength; a second partially reflective region configured to at least partially transmit light of the first and second primary peak wavelengths and to reflect light of a third primary peak wavelength; a third partially reflective region configured to at least partially reflect light with the third primary peak wavelength; a first colour conversion resonator cavity arranged to receive input light with the first primary peak wavelength through the first partially reflective region and to convert at least some of the light of the first primary peak wavelength to provide light of the second primary peak wavelength, wherein the first colour conversion resonator cavity is arranged such that the second primary peak wavelength resonates in the first colour conversion resonator cavity and resonant light with the second prim
    Type: Application
    Filed: October 10, 2022
    Publication date: February 1, 2024
    Inventors: Jun-Youn Kim, Anwer Saeed, Andrea Pinos, Mohsin Aziz, Ian Murray, Abdul Shakoor
  • Publication number: 20240038928
    Abstract: A light-emitting device includes: a first semiconductor layer having a first electric conductivity type; a second semiconductor layer provided between the first semiconductor layer and a second electrode and having a second electric conductivity type; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; an insulating layer provided along a side surface of the first semiconductor layer; and a metal layer provided in contact with the insulating layer and along the side surface of the first semiconductor layer and that reflects light outputted from the first electrode side. The metal layer includes a first end in a first direction directed from the light-emitting layer toward the first semiconductor layer. The first semiconductor layer includes a second end in the first direction. In the first direction, a position of the first end is equal to or different from a position of the second end.
    Type: Application
    Filed: March 20, 2023
    Publication date: February 1, 2024
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Kentaro TAKAYANAGI
  • Publication number: 20240038929
    Abstract: A patterned substrate for light emitting diode includes a plurality of nodes and links protruding from a base plane of the substrate and base areas on the substrate, each pair of adjacent nodes is connected by a corresponding link, respectively. The nodes and links also can be concave nodes and concave links cutting into a surface of the substrate, each pair of adjacent concave nodes is connected by a corresponding concave link, respectively.
    Type: Application
    Filed: July 29, 2022
    Publication date: February 1, 2024
    Inventors: JIANPING ZHANG, YING GAO, LING ZHOU
  • Publication number: 20240038930
    Abstract: A display device according to the present invention comprises: a wiring board including a plurality of pixel areas; and semiconductor light-emitting devices disposed in the pixel areas, wherein the pixel areas include semiconductor light-emitting devices having different shapes and emitting different colors, and wherein the wiring board has two or more pixel areas having different arrangements of the semiconductor light-emitting devices. The present invention may be used as an align key when manufacturing a display device by varying the arrangement of semiconductor light-emitting devices in some pixel areas.
    Type: Application
    Filed: December 9, 2020
    Publication date: February 1, 2024
    Applicant: LG ELECTRONICS INC.
    Inventors: Jungsub KIM, Gunho KIM, Yoonchul KIM, Jisoo KO
  • Publication number: 20240038931
    Abstract: An epitaxial substrate having a 2D material interposer, the epitaxial substrate extending along an epitaxial interface direction, wherein the epitaxial substrate includes: a polycrystalline base substrate having a superficial layer, a wafer bevel, and a back surface, wherein a difference in coefficient of thermal expansion between the polycrystalline base substrate and MN or GaN is not greater than 1.5×106° C.?1 in a direction parallel to the epitaxial interface; a multi-orientation 2D ultra-thin material interposer arranged on the superficial layer of the polycrystalline base substrate, wherein the multi-orientation 2D ultra-thin material interposer has a top layer, a lattice constant of the top layer being highly matched with that of AlN, AlGaN, or GaN; and an AlN, AlGaN, or GaN-based epitaxial layer, which is epitaxially grown on a portion of the multi-orientation 2D ultra-thin material interposer distant from the polycrystalline base substrate.
    Type: Application
    Filed: July 26, 2022
    Publication date: February 1, 2024
    Inventors: Hsiao-Lei WANG, Neng-Tai SHIH, Kao-Mei SUNG
  • Publication number: 20240038932
    Abstract: A nitride semiconductor light-emitting device includes: a first conductivity-type nitride semiconductor layer, an active layer located over the first conductivity-type nitride semiconductor layer, a second conductivity-type nitride semiconductor layer located over the active layer, a current constriction layer located in a part of the second conductivity-type nitride semiconductor layer, and a transparent conductive layer located on the second conductivity-type nitride semiconductor layer and transparent to light generated from the active layer.
    Type: Application
    Filed: December 13, 2021
    Publication date: February 1, 2024
    Applicant: Ushio Denki Kabushiki Kaisha
    Inventor: Toshihiko Fukamachi
  • Publication number: 20240038933
    Abstract: The embodiment relates to a semiconductor light emitting device package and a display device including the same. Semiconductor light emitting device package according to an embodiment can comprises a light emitting structure 155 including a first conductivity type semiconductor layer 155a, an active layer 155b, and a second conductivity type semiconductor layer 155c; a first electrode 151 and a second electrode 152 electrically connected to the first conductivity type semiconductor layer 155a and the second conductivity type semiconductor layer 155c of the light emitting structure 155, respectively; an interlayer insulating layer disposed on the side of the light emitting structure 155 and an adhesive layer 158 disposed on the light emitting structure 155.
    Type: Application
    Filed: June 15, 2020
    Publication date: February 1, 2024
    Applicant: LG ELECTRONICS INC.
    Inventors: Bongseok CHOI, Sungjin PARK, Joonkwon MOON, Taesu OH
  • Publication number: 20240038934
    Abstract: The present disclosure relates to a display substrate and a method for manufacturing the same. The display substrate includes: a substrate; a first electrode located on the substrate; and a conductive convex located on the first electrode. A dimension of a cross section of the conductive convex along a plane parallel to the substrate is negatively correlated to a distance from the cross section to a surface of the first electrode.
    Type: Application
    Filed: October 6, 2023
    Publication date: February 1, 2024
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Guangcai YUAN, Zhijun LV, Haixu LI, Xiaoxin SONG, Feng ZHANG, Wenqu LIU, Liwen DONG, Zhao CUI, Libo WANG, Detian MENG
  • Publication number: 20240038935
    Abstract: A display panel and display apparatus are provided in the present disclosure. The display panel includes a substrate; a first insulating layer disposed on a side of the substrate; a first electrode layer disposed on a side of the first insulating layer away from the substrate; a light-blocking layer disposed on a side of the first electrode layer away from the first insulating layer; and an opening combination, including a first opening and a second opening which correspond to each other. The first opening passes through the light-blocking layer along a direction perpendicular to a plane of the substrate; the second opening is at least in the first insulating layer; the opening combination includes an asymmetric design; and/or the first electrode layer at a position corresponding to the second opening is a non-planar structure.
    Type: Application
    Filed: October 27, 2022
    Publication date: February 1, 2024
    Inventors: Shengtao ZHU, Yang ZENG, Shihao TANG
  • Publication number: 20240038936
    Abstract: The present disclosure relates to the technical field of semiconductor manufacturing, and in particular to an LED chip and a preparation method thereof, including: a substrate, an epitaxial layer, a current blocking layer, a current spreading layer, a first P-type electrode, a first N-type electrode, a first insulation layer, a second P-type electrode, a second N-type electrode, a second insulation layer, a third P-type electrode, a third N-type electrode, a P-type pad and a N-type pad. As for the LED chip, the electrode design of the flip chip is improved and a third N-type electrode and a third P-type electrode are added. The third N-type electrode and the P-type pad have no overlap spatially, similarly, the third P-type electrode and the N-type pad have no overlap spatially.
    Type: Application
    Filed: December 15, 2021
    Publication date: February 1, 2024
    Applicant: HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO., LTD
    Inventors: Sibo WANG, Dongmei LI, Han-Chung LIAO
  • Publication number: 20240038937
    Abstract: A display device including a substrate, a first electrode and a second electrode on the substrate, extending parallel to each other along a first direction, and spaced from each other in a second direction intersecting the first direction, a plurality of light emitting elements on the first electrode and the second electrode, a first insulating layer partially covering upper surfaces of the light emitting elements, a first connection electrode on the plurality of light emitting elements and the first insulating layer, the first connection electrode being in contact with an end of each of the plurality of light emitting elements, a second insulating layer on the first connection electrode, a second connection electrode on the second insulating layer, the second connection electrode being in contact with an other end of each of the plurality of light emitting elements, and a first dummy electrode overlapping the first connection electrode.
    Type: Application
    Filed: June 22, 2023
    Publication date: February 1, 2024
    Inventors: Veidhes BASRUR, Ki Nyeng KANG, Ock Soo SON, Jong Hwan CHA
  • Publication number: 20240038938
    Abstract: A light-emitting structure, comprising: a substrate, and a first metal layer, an insulating layer, an integrated metal layer, and an epitaxial stack, disposed above the substrate. The integrated metal layer is disposed on a surface of the second-type semiconductor layer facing away from the active region, and the integrated metal layer comprises an exposed surface on a side of the integrated metal layer facing the second-type semiconductor layer, the exposed surface being configured to electrically connect with an external driving device.
    Type: Application
    Filed: October 13, 2023
    Publication date: February 1, 2024
    Applicant: XIAMEN CHANGELIGHT CO., LTD.
    Inventors: Xiaodong QU, Kaixuan CHEN, Hengping CUI, Haifang CAI, Yumei CAI, Zhiwei LIN, Kewei YANG, Bin ZHAO, Tudui JIANG, Yan LI, Minhua LI, Guilan LUO
  • Publication number: 20240038939
    Abstract: A micro light-emitting diode transfer device and a method of transferring thereof are provided. The micro light-emitting diode transfer device includes an operating board, a light source generator, and a photomagnetic substrate. The light source generator is disposed above the operating board and includes a plurality of light emitting units, each of the light emitting units comprises a light emitting side, and the light emitting side faces the operating board. The photomagnetic substrate includes a plurality of photomagnetic units, which attract micro light-emitting diodes.
    Type: Application
    Filed: December 30, 2020
    Publication date: February 1, 2024
    Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Zhaoning Sun, Chaode Mo
  • Publication number: 20240038940
    Abstract: The present invention is applicable to a technical field related to display apparatuses, and the present invention relates to a transfer substrate that transfers a phosphor onto a semiconductor light-emitting device, in which the transfer substrate may comprise: a temporary substrate; a unit phosphor structure which is provided on the temporary substrate and comprises a color filter, a phosphor stacked on the color filter, and a phosphor binder for fixing the phosphor; and a light-absorption layer, which is an inorganic layer provided between the temporary substrate and the color filter, and absorbs light to separate the unit phosphor structure from the temporary substrate.
    Type: Application
    Filed: August 20, 2020
    Publication date: February 1, 2024
    Applicant: LG ELECTRONICS INC.
    Inventor: Hwanjoon CHOI
  • Publication number: 20240038941
    Abstract: A quantum-dot thin film, a display backplate, and a manufacturing method of the display backplate are provided. The display backplate includes a light-emitting module and a quantum-dot module. The light-emitting module includes a light-emitting main body and a composite protective functional layer which are stacked. The quantum-dot module includes a quantum-dot layer disposed on the composite protective functional layer and a common protective functional layer disposed on the quantum-dot layer. A thickness of the composite protective functional layer is less than a thickness of the common protective functional layer.
    Type: Application
    Filed: November 30, 2021
    Publication date: February 1, 2024
    Applicant: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventor: Chaoqun Yang
  • Publication number: 20240038942
    Abstract: A lighting device according to an embodiment comprises a substrate, a light emitting device disposed on the substrate, a first reflective member disposed on the substrate, a resin layer disposed on the first reflective member, and a wavelength conversion layer disposed on the resin layer, wherein the resin layer includes a first resin layer, a second resin layer spaced apart from the first resin layer, and a third resin layer disposed between the first and second resin layers; the wavelength conversion layer includes a first wavelength conversion layer disposed on the first resin layer and a second wavelength conversion layer disposed on the second resin layer, and the height of the second resin layer is different from the height of the first resin layer; and the light emitting device may be disposed in a region vertically overlap the second and third resin layers but vertically overlap the first layer.
    Type: Application
    Filed: June 21, 2021
    Publication date: February 1, 2024
    Inventors: Kyoung Soo AHN, Young Min MOON, Kee Youn JANG
  • Publication number: 20240038943
    Abstract: A display device includes: a first substrate including sub-pixels including light emitting areas; first electrodes and second electrodes disposed on the first substrate and spaced apart from each other; light emitting elements disposed on the first substrate and disposed on the first electrodes and the second electrodes in the light emitting areas of the sub-pixels; a color control member disposed on the light emitting elements and including light transmitting layers and wavelength conversion layers; a second substrate facing the first substrate and including light transmitting areas overlapping the sub-pixels; color filter layers disposed on a surface of the second substrate facing the first substrate; and a base layer disposed between the first substrate and the second substrate and disposed between at least the wavelength conversion layers and the color filter layers.
    Type: Application
    Filed: July 1, 2021
    Publication date: February 1, 2024
    Applicant: Samsung Display Co., LTD.
    Inventors: Dae Hyun KIM, Tae Jin KONG, Ock Soo SON, Hyun Min CHO, Chang Il TAE
  • Publication number: 20240038944
    Abstract: A LED display panel includes a substrate, a light source assembly disposed on the substrate, and a light filter layer disposed on the light source assembly. The light filter layer includes a light filter region. The light filter region includes a light-transmitting region and a non-light-transmitting region disposed outside the light-transmitting region. An incident angle of a light emitted by the light source assembly to the light-transmitting region is less than a total reflection critical angle of the light filter layer, and an incident angle of the light emitted by the light source assembly to the non-light-transmitting region is greater than or equal to the total reflection critical angle of the light filter layer. The total reflection critical angle is a critical angle at which the light exits from an upper surface of the light filter layer. A display device includes the LED display panel.
    Type: Application
    Filed: August 30, 2022
    Publication date: February 1, 2024
    Applicant: TCL China Star Optoelectronics Technology Co., Ltd.
    Inventor: Daobing HU
  • Publication number: 20240038945
    Abstract: The present application discloses a display panel. The display panel includes a plurality of light emitting devices distributed in an array, wherein each light-emitting device includes an upper light emitting surface and a side light emitting surface configured to transmit light, and wherein the side light emitting surface is provided with a reflective layer; a plurality of light emitting devices includes a plurality of light emitting devices with different colors, and the reflective layer on the light emitting device with one color is configured to reflect light emitted by the color light emitting devices with another colors.
    Type: Application
    Filed: June 18, 2021
    Publication date: February 1, 2024
    Inventor: Xi CHENG
  • Publication number: 20240038946
    Abstract: The present invention provides an array substrate, a backlight module, and a display panel, by locating two second conductive pads connected to a second wire on the same side of a first wire, the present invention prevents an overlap between the first wire and the second wire connected to the two second conductive pad.
    Type: Application
    Filed: March 30, 2021
    Publication date: February 1, 2024
    Inventors: Bin ZHAO, Yan LI, Juncheng XIAO, Ji LI
  • Publication number: 20240038947
    Abstract: A display panel is provided. The display panel includes a driving backplane with a connecting electrode, an insulating layer arranged on the connecting electrode, and a light-emitting unit arranged on the driving backplane. The insulating layer includes an opening exposing part of a surface of the connecting electrode. The light-emitting unit is electrically connected with a bump electrode, and the bump electrode is electrically connected with the connecting electrode through the opening. The opening has a ridge and furrow profile, which can increase an area of a sidewall of the opening, such that a contact area between the bump electrode and the sidewall is increased to prevent peeling or cracking between the films.
    Type: Application
    Filed: December 17, 2021
    Publication date: February 1, 2024
    Inventor: Qiang LU