Abstract: In growing a silicon monocrystal from a silicon melt added with an N-type dopant by Czochralski method, the monocrystal is grown such that a relationship represented by a formula (1) as follows is satisfied. In the formula (1): a dopant concentration in the silicon melt is represented by C (atoms/cm3); an average temperature gradient of the grown monocrystal is represented by Gave(K/mm); a pulling-up speed is represented by V (mm/min); and a coefficient corresponding to a kind of the dopant is represented by A. By growing the silicon monocrystal under a condition shown in the left to a critical line G1, occurrence of abnormal growth due to compositional supercooling can be prevented.

Abstract: A process for production of a silicon ingot, by which a silicon ingot exhibiting a low resistivity even in the top portion can be produced. The process for the production of a silicon ingot comprises includes withdrawing a silicon seed crystal (13) from a silicon melt (11) to grow a silicon single crystal (12), with the silicon seed crystal (13) and the silicon melt (11) containing dopants of the same kind.

Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.

Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.

Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.

Abstract: A method for producing a silicon single crystal by the Czochralski method with carbon-doping comprising: charging a polycrystalline silicon material and any one of a carbon dopant selected from the group consisting of an organic compound, an organic compound and a silicon wafer, carbon powder and a silicon wafer, an organic compound and carbon powder, and an organic compound and carbon powder and a silicon wafer into a crucible and melting the polycrystalline silicon material and the carbon dopant; and then growing a silicon single crystal from the melt of the polycrystalline silicon material and the carbon dopant. And a carbon-doped silicon single crystal produced by the method. Thereby, there is provided a method for producing a silicon single crystal with carbon-doping in which the crystal can be doped with carbon easily at low cost, and carbon concentration in the crystal can be controlled precisely.

Abstract: After adding phosphorus (P) and germanium (Ge) into a silicon melt or adding phosphorus into a silicon/germanium melt, a silicon monocrystal is grown from the silicon melt by a Czochralski method, where a phosphorus concentration [P]L (atoms/cm3) in the silicon melt, a Ge concentration in the silicon monocrystal, an average temperature gradient Gave (K/mm) and a pull speed V (mm/min) are controlled to satisfy a formula (1) as follows, the phosphorus concentration [P] (atoms/cm3) in the silicon monocrystal is 4.84×1019 atoms/cm3 or more and 8.49×1019 atoms/cm3 or less, and the phosphorus concentration [P] (atoms/cm3) and the Ge concentration [Ge] (atoms/cm3) in the silicon monocrystal satisfy a relationship according to a formula (2) as follows while growing the silicon monocrystal. [P]L+(0.3151×[Ge]+3.806×1018)/1.5<0.5×(Gave/V+43)×1019??(1) [Ge]<?6.95×[P]+5.90×1020??(2).

Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, mainly increased material strength. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. A silicon material with a germanium concentration in the range (50-200) ppmw demonstrates an increased material strength, where best practical ranges depend on the material quality generated.

Abstract: The present invention can provide a silicon semiconductor substrate used for and epitaxial wafer, in which uniform and high-level gettering ability is obtained irrespective of slicing positions from a silicon single crystal while generation of epitaxial defects can be suppressed, by doping carbon or carbon along with nitrogen during a pulling process of a CZ method or by performing appropriate heat treatment prior to the epitaxial process. Therefore, a crystal production yield can remarkably be improved because a permissible upper limit (concentration margin) of an oxygen concentration which is restricted by formation of a ring-shaped OSF region can be higher and also an excellent gettering ability is exhibited, while allowing an epitaxial wafer to be produced wherein epitaxial defects attributable to substrate crystal defects are not formed.

Abstract: A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.

Abstract: The sublimation speed of dopant can be precisely controlled without being influenced by a change over time of intra-furnace thermal environment. A dopant supply unit equipped with an accommodation chamber and a supply tube is provided. A sublimable dopant is accommodated. Upon sublimation of the dopant within the accommodation chamber, the sublimed dopant is introduced into a melt. The dopant within the accommodation chamber of the dopant supply unit is heated. The amount of heating by means of heating means is controlled so as to sublime the dopant at a desired sublimation speed. The dopant is supplied to the melt so that the dopant concentration until the first half of a straight body portion of the silicon single crystal is in the state of low concentration or non-addition.

Abstract: A method of growing ribbon crystal provides a crucible containing molten material, and passes at least two strings through the molten material to produce a partially formed ribbon crystal. The method then directs a fluid to a given portion of the partially formed ribbon crystal to convectively cool the given portion.

Abstract: The present invention provides a method for growing a carbon-doped silicon single crystal that grows a silicon single crystal from a raw material melt in a crucible having carbon added therein by the Czochralski method, wherein an extruded material or a molded material is used as a dopant for adding the carbon to a raw material in the crucible. As a result, there can be provided the method for growing a carbon-doped silicon single crystal, by which the carbon can be easily doped in the silicon single crystal at low cost and a carbon concentration in the silicon single crystal can be accurately controlled in a silicon single crystal pulling up process by the Czochralski method.

Abstract: In consideration of influence of segregation, an evaporation area of a volatile dopant and influence of a pulling-up speed at the time of manufacturing a monocrystal by use of a monocrystal pulling-up device, an evaporation speed formula for calculating an evaporation speed of the dopant is derived. At a predetermined timing during pulling-up, gas flow volume and inner pressure in a chamber are controlled such that a cumulative evaporation amount of the dopant, calculated based on the evaporation speed formula, becomes a predetermined amount. A difference between a resistivity profile of the monocrystal predicted based on the evaporation speed formula and an actual resistivity profile is made small. Since no volatile dopant is subsequently added, increase in workload on an operator, increase of manufacturing time, an increase in amorphous adhering to the inside of the chamber, and an increase in workload at the time of cleaning the inside of the chamber can be prevented.

Abstract: A doping device includes a first dopant accommodating portion including an opening on an upper portion to accommodate a first dopant that is evaporated near a surface of a semiconductor melt; a second dopant accommodating portion including a dopant holder that holds a second dopant that is liquefied near the surface of the semiconductor melt while including a communicating hole for delivering the liquefied dopant downwardly, and a conduit tube provided on a lower portion of the dopant holder for delivering the liquefied dopant flowed from the communicating hole to the surface of the semiconductor melt; and a guide provided by a cylinder body of which a lower end is opened and an upper end is closed for guiding dopant gas generated by evaporation of the first dopant to the surface of the semiconductor melt.

Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, mainly increased material strength. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. A silicon material with a germanium concentration in the range (50-200) ppmw demonstrates an increased material strength, where best practical ranges depend on the material quality generated.

Abstract: A method of manufacturing a silicon single crystal with carbon doping in a chamber by using a Czochralski method is provided. In a step of placing a silicon raw material in a crucible, a carbon dopant is disposed at a distance of 5 cm or further away from the inner surface of the crucible, and in this state, a step of melting the silicon raw material is performed after the disposing step.

Abstract: Silicon raw material is filled into a graphite crucible (10), the graphite crucible (10) is heated to form molten silicon (M), at least one rare earth element and at least one of Sn, Al, and Ge are added to molten silicon (M), and a temperature gradient is maintained in the molten silicon in which the temperature decreases from within the molten silicon toward the surface while growing an silicon carbide single crystal starting from an silicon carbide seed crystal (14) held immediately below the surface of the molten liquid.

Abstract: The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 and the growth condition V/G falls within the epitaxial defect-free region ?2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. A silicon wafer is also produced wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region ?1, and both the heat treatment condition and the oxygen concentration of the silicon crystal are controlled so that no OSF nuclei grow to OSFs.

Abstract: A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone of the chamber; filling the reactor with a solvent fluid; heating and pressuring the chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical in the nutrient zone; transporting supercritical from the nutrient zone to the growth zone, and growing the seed crystals as nutrients from the supercritical fluid deposit on the crystals.

Abstract: A single crystal silicon, ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect, is substantially free of oxidation induced stacking faults and is nitrogen doped to stabilize oxygen precipitation nuclei therein, and a process for the preparation thereof.

Abstract: Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles that are substantially free from the solvent and are uniformly coated with the dopant.

Abstract: There is provided a manufacturing process for a CZ silicon single crystal wafer which is subjected to heat treatment wherein slip resistance of a portion of the CZ silicon single crystal wafer in contact with a heat treatment boat is improved with extreme simplicity, convenience and very low cost. A silicon single crystal rod is grown by means of a Czochralski method in a condition that an OSF ring region is formed in a peripheral region of the silicon single crystal rod and the grown silicon signal crystal rod is processed into silicon single crystal wafers, whereby the silicon single crystal wafer is obtained such that when the silicon single crystal wafer is subjected to heat treatment, at least a portion of the silicon single crystal wafer in contact between the wafer and the boat is formed of an OSF ring region.

Abstract: An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.

Abstract: An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.

Abstract: A silicon wafer for epitaxial growth consisting of a highly boron-doped silicon single crystal wafer, an antimony-doped silicon single crystal wafer or a phosphorus-doped silicon single crystal wafer, which allows easy oxygen precipitation and exhibits high gettering ability in spite of its suppressed oxygen concentration, and an epitaxial silicon wafer in which an epitaxial layer grown by using the aforementioned wafer as a substrate wafer has an extremely low heavy metal impurity concentration are produced with high productivity and supplied. The present invention relates to a boron-doped silicon single crystal wafer having a resistivity of from 10 m&OHgr;·cm to 100 m&OHgr;·cm, an antimony-doped silicon single crystal wafer, or a phosphorus-doped silicon single crystal wafer, which are produced by slicing a silicon single crystal ingot grown by the Czochralski method with nitrogen doping.

Abstract: The high quality silicon wafer of large diameter is invented by mainly paying attention to the particles ascribed to the crystal and the wafer is optimal for manufacturing ultra highly integrated devices. The silicon wafer is of diameter of 300 mm and larger sliced from a single-crystal silicon ingot pulled by CZ method, the surface is mirror-polished and cleaned with ammonia based cleaning solution, and the number of particles of 0.083 &mgr;m and larger in size detected on its main surface is 120 and smaller and/or particles of 0.090 &mgr;m and larger in size is smaller than 80.

Abstract: A time-released dopant delivery system and method are provided in a Czochralski-type crystal-growing furnace to enable continuous doping of the melt over time. The dopant delivery system and method adjusts dopant levels within the melt as a function of time such that a controlled amount of dopant and, more typically, a substantially constant amount of dopant can be incorporated into the ingot over its length. By controlling the doping level in the ingot, the resistivity profile of the ingot can also be controlled over its length. In order to provide controlled dopant delivery, the dopant delivery system generally includes a vessel defining an internal cavity within which the dopant is disposed and an orifice through which the dopant, typically a molten dopant, is released. The dopant delivery system can also include means for submerging the vessel within the melt such that heat from the melt melts and therefore releases the dopant into the melt.

Abstract: the present invention provides an improved method and apparatus for doping silicon and other crystals made by the Czochralski process wherein the surface of the melt is partially enclosed or covered in order to capture the dopant vapors and improve the efficiency with which they are dissolved in the melt. In accordance with the invention the dopant is suspended in a vapor retention vessel such as a quartz bell jar which is suspended above the melt so that the heat from the melt causes the dopant to vaporize. In accordance with the invention, an annular baffle is provided around the mouth of the vessel or the rim of the crucible containing the melt such that the amount of uncovered open area on the surface of the melt is reduced and the dopant vapor is retained in contact with the surface of the melt such that it dissolves more efficiently in the melt.

Abstract: A method of introducing nitrogen into a melt for use in producing a nitrogen-doped silicon single crystal by the Czochralski method includes adding a silicon material to a vessel, such as a quartz crucible, adding a nitrogen-containing powder, preferably silicon nitride powder, to the vessel, and heating the vessel for a time sufficient to melt the silicon material and to dissolve the nitrogen-containing in the silicon material in order to form the melt. A nitrogen-doped silicon single crystal is then produced from the melt by the Czochralski method by pulling the silicon single crystal from the melt with a seed crystal.

Abstract: An epitaxial wafer for a light-emitting diode includes an n-type GaP single-crystal substrate, and at least an n-type semiconductor epitaxial layer and a p-type semiconductor epitaxial layer formed on the substrate. The substrate has a boron concentration of not more than 1.times.10.sup.17 cm.sup.-3. A light-emitting diode is fabricated using the epitaxial wafer thus formed provided with electrodes.

Abstract: By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements inthe wafer. The difference between the maximum value and minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4.times.10.sup.-5, and the density of Si atoms contained in the GaAs single crystal is set to at most 1.times.10.sup.16 cm.sup.-3, whereby the characteristics of semiconductor elements whose parent matrial is the GaAs single crystal can be made uniform.

Abstract: Means for applying a plastic finishing layer to the surface of a composite article comprising an extruded plastic-based solid body reinforced by one or more bundles of reinforcing fibers, these bundles being affixed to its surface, comprising a ring (1), the entry diameter (2) of which is greater than its exit diameter (3), the internal surface (4) of the said ring furthermore providing a decreasing variation in the internal diameter between its entry and its exit; method of applying a finishing layer, in which method these means are used, and coated composite article.

Abstract: To manufacture a low-carbon concentration GaAs wafer required for devices such as hall sensors, FETs, HEMTs etc. at a high production yield without deteriorating the semi-insulation characteristics thereof, a method of manufacturing a semi-insulation GaAs monocrystal by controlling carbon concentration during crystal growth by a simple method is disclosed. The method of manufacturing a semi-insulation GaAs monocrystal in accordance with liquid encapsulated Czochralski method, comprises the steps of: preparing a crucible (5) formed with a crucible body (6) and a small chamber (8) communicating with a lower part of the crucible body and a carbon heater (4) processed to reduce surface blow holes thereof; putting a melted GaAs liquid and a sealing compound B.sub.2 O.sub.3 in the crucible housed in an airtight vessel in such a way that the sealing compound B.sub.2 O.sub.

Abstract: A method of forming a semiconductor boule comprises the steps of providing a chamber having a crucible therein; introducing a first material and a second material into the crucible, the second material overlying the first material; heating the crucible to melt the first and second materials for substantially continuously covering the first material with the second material during the melting of the first and second materials; cooling the melt to grow a directly synthesized boule; and separating the grown boule from the crucible. In another embodiment, the method comprises steps of providing a chamber having a crucible therein; charging a first and a second material for forming the boule and a liquid encapsulant into the crucible, the volume of the intergranular space of charged first material being smaller than the volume of the molten second material; heating the crucible to melt the first and second materials; cooling the molten materials to grow the boule; and separating the grown boule from the crucible.

Abstract: A dopant (76), such as antimony, is cast around a seed crystal (10) to form a seed-dopant assembly (14) that facilitates doping of a molten semiconductor (36), such as silicon, in a crystal-growing furnace (34). To grow a doped ingot, the seed-dopant assembly is held in a relatively cool part of the furnace while the semiconductor is melted. When the semiconductor melt is ready for doping, the seed-dopant assembly is lowered to a position just above the melt. Heat transferred to the seed dopant assembly from the melt causes the dopant to drop off the seed into the molten semiconductor without splashing and without immersing the seed.

Abstract: A single crystal material is filled in a crucible, and the whole of the single crystal material is melted to contain doping impurities. A solid layer coagulated upward from the bottom of the crucible is rendered to coexist with a melted layer over the solid layer. The solid layer is melted from the upper side thereof while pulling the single crystal from the melted layer. The ratio by weight between the solid layer and the single crystal material at the start of pulling is adjusted, together with the ratio by weight between the grown single crystal and the melting solid layer. The single crystal is thus grown while changing the volume of the melted layer.

Abstract: A process for producing a silicon single crystal is disclosed which comprises the steps of providing a silicon melt in a crucible, feeding grains of silicon polycrystal to the silicon melt and pulling up a silicon single crystal from the silicon melt. The concentration of residual hydrogen in the grains of silicon polycrystal is more than 10 ppmwt and less than 100 ppmwt. The process prevents the silicon single crystal from being polycrystalline.