Abstract: Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.

Abstract: The present invention provides machine readable media embedded with the three-dimensional atomic structure coordinates of Synagis Fab, and subsets thereof, and methods of using them.

Abstract: A method for forming a double density wordline. A semiconductor substrate having a poly layer, a first insulating layer, a first dummy poly layer, and a second insulating layer is provided. The second insulating layer and the first dummy poly layer separated by an opening are a first wordline mask and a second wordline mask respectively. A spacer is formed on a sidewall of the opening, and the opening is filled with a second dummy poly layer. The spacer, the second insulating layer, and the exposed first insulating layer are removed to form a third wordline mask, the third wordline is composed of the second dummy poly layer and the unexposed first insulating layer. The poly layer is etched to form a first wordline, a second wordline, and a third wordline using the first wordline mask, the second wordline mask, and the third wordline mask as etching masks.

Abstract: A method of forming a shallow junction in a semiconductor substrate is disclosed. The method of one embodiment comprises preamorphizing a first region of a semiconductor substrate to a first depth and implanting recrystallization inhibitors into a second region of the semiconductor substrate. The second region is a part of the first region and has a second depth. Next, a dopant is implanted into a third region of the semiconductor substrate with the third region being a part of the second region and a first annealing is performed to selectively recrystallize the first region that has no recrystallization inhibitors. Next, a second annealing is performed to recrystallize the second region and diffuse the dopant within the second region.

Abstract: A method of producing a crystalline ITO dispersed solution, which contains the steps of: (a) causing an aqueous mixed solution of an indium compound and a tin compound to react with an aqueous basic solution, thereby generating a gel; (b) removing water content from the gel by solvent-exchange, and dispersing the resultant into an organic solvent; and (c) subjecting the resultant dispersed product to heating treatment.

Abstract: A zinc oxide semiconductor material comprising at least zinc and oxygen as constituent elements, which can be deterred with respect to the deterioration of doping characteristic, luminous characteristic and the like, compared with a conventional c-axial oriented one by orienting the crystal orientation plane to a-axis of the wurtzite structure.

Abstract: The present invention relates to a method to control the nucleation and transverse motion of 180° inverted domains in ferroelectric nonlinear crystals. It includes a process composing of a high temperature oxidation of the first metal layer and a pulsed field poling of the second electrodes. The main object of present invention is to provide domain inversion of ferroelectric nonlinear crystals with field control the nucleation and transverse motion of inverted domains and two-dimension nonlinear photonic crystals for time-domain multiple-wave simultaneous lasers and space filter function. Another object of present invention is to provide space-charge effect for screened edge field beneath the metal electrode, The other object of present invention is to provide the constraint of inverted domain nucleation in the oxidized electrode for arbitrarily geometrical form of 2D ferroelectric lattice structure.

Abstract: An evaluation method for polycrystalline silicon including the steps of immersing the polycrystalline silicon in an agent which is capable of dissolving the polycrystalline silicon, and counting the number of foreign particles in the agent. The polycrystalline silicon thus evaluated may be used as a material for pulling single crystal silicon. The evaluation method may further include a step of analyzing the composition of the foreign particles. In yet another aspect, the evaluation method may further include a step of subjecting the agent to a circulation filtering process prior to the immersion of the polycrystalline silicon in the agent.

Abstract: The resistivity of a p-doped III-V or a p-doped II-VI semiconductor material is reduced. The reduction of resistivity of the p-type III-V or a II-VI semiconductor material is achieved by applying an electric field to the semiconductor material. III-V nitride-based light emitting diodes are prepared.

Abstract: A silicon wafer is doped with boron and germanium in a range that satisfies a relational expression defined by: ?0.8×10?3?4.64×10?24×[Ge]?2.69×10?23×[B]?1.5×10?3. This can reduce the miss-fit dislocation which might be induced when an epitaxial layer is grown over the silicon wafer that has been added with boron in high concentration. It is to be noted that in the above relational expression, the [B] denotes a boron concentration, while the [Ge] denotes a germanium concentration and a concentration unit is indicated by atoms/cm3.

Abstract: An improved method of determining the concentration of nitrogen within a wafer is provided. At least a portion of the nitrogen within the wafer is initially gettered to a gettering site. In order prevent the in-diffusion of nitrogen, a barrier layer is generally deposited upon the wafer prior to gettering the nitrogen within the wafer. The nitrogen is then measured at the gettering site. The concentration of nitrogen within the wafer is then determined based upon the measurement of nitrogen at the gettering site and the diffusion coefficient for nitrogen. In this regard, the diffusion coefficient of nitrogen permits the measurement of nitrogen at the gettering site to be translated into a measurement of the concentration of nitrogen throughout the entire wafer.

Abstract: In one embodiment, lithium oxide concentration in wafers is adjusted by placing the wafers in a vessel. Vapor of a lithium oxide source is provided and absorbed by the wafers, thereby adjusting the lithium oxide concentration in the wafers. In another embodiment, a two-phase lithium-rich source is placed between wafers such that space in the process chamber is efficiently utilized. In another embodiment, the wafers to be processed are placed in a section of a process chamber (e.g., process tube). Lithium oxide is introduced on end of the process chamber. Carrier gas is also introduced on that end of the process chamber to carry the lithium oxide into the section of the process chamber where the wafers are located. By adjusting the partial pressure of lithium oxide in the process chamber, the rate at which lithium oxide is absorbed by the wafers is controlled.

Abstract: A method of preparing high-k gate dielectrics by liquid phase anodic oxidation, which first produces a metallic film on the surface of a clean silicon substrate, next oxidizes the metallic film to form a metallic oxide as a gate oxidizing layer by liquid phase anodic oxidation, then promoting quality of the gate oxidizing layer by processing a step of thermal annealing. With this oxidation, a gate dielectric layer of high quality, high-k and ultrathin equivalent oxide thickness (EOT) can be produced, which can be integrated into a complementary metal oxide semiconductor (CMOS) production process directly.

Abstract: A method of preparing a surface of a substrate for bonding by removing oxide and altering the atomic surface of the substrate is described. The method comprises, providing a substrate comprised of a plurality of elements. The substrate is held at an elevated temperature and an over-pressure of gas is allowed to flow over the surface of the substrate. The gas over-pressure is comprised of an element found in the plurality of elements. Holding the substrate at an elevated temperature helps removes essentially all the oxide on the surface of the substrate. However, the elevated temperatures also evaporate certain atoms on the substrate surface and cause other atoms on the substrate surface to migrate. Flowing a gas over the surface of the substrate, helps to replace the atoms which have evaporated thereby preventing movement of other atoms. After removing the oxide, the substrate is allowed to cool.

Abstract: A method for preparing zinc oxide semiconductor material in which an organometallic compound containing zinc as a metal composition is introduced into a reaction chamber and the zinc-containing organic compound is vaporized to effect a specific decomposition reaction on a substrate, thereby forming a zinc oxide semiconductor material on the substrate. The zinc-containing organic compound employed is one having a low reactivity with oxygen in a vapor phase under the temperature atmosphere in the reaction chamber.

Abstract: A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a wafer having a vacancy concentration profile in which the peak density is at or near the central plane with the concentration generally decreasing in the direction of the front surface of the wafer.

Abstract: An objective (1), in particular for a microlithography projection apparatus, has lenses or lens parts falling into at least two groups. The first group (3) is made of a first crystalline material and the second group (5) is made of a second crystalline material. In the first group (3), an outermost aperture ray (15) is subject to a first optical path difference between two mutually orthogonal states of linear polarization; and the same outermost aperture ray is subject to a second optical path difference in the second group (5). The two different crystalline materials are selected so that the first and second optical path difference approximately compensate each other. A suitable selection consists of calcium fluoride for the first and barium fluoride for the second crystalline material.

Abstract: A low temperature method for growing quaternary epitaxial films having the formula XCZN wherein X is a Group IV element and Z is a Group III element. A Gaseous flux of precursor H3XCN and a vapor flux of Z atoms are introduced into a gas-source molecular beam epitaxial (MBE) chamber to form thin film of XCZN on a substrate preferably of silicon or silicon carbide. Silicon substrates may comprise a native oxide layer, thermal oxide layer, AlN/silicon structures or an interface of Al—O—Si—N formed from interlayers of Al on the Si02 layer. Epitaxial thin film SiCAlN and AlN are provided. Bandgap engineering is disclosed. Semiconductor devices produced by the present method exhibit bandgaps and spectral ranges which make them useful for optoelectronic and microelectronic applications. SiCAlN deposited on large-diameter silicon wafers are substrates for growth of conventional Group III nitrides such as AlN. The quaternary compounds exhibit extreme hardness.

Abstract: Layers of slurry of dielectric powder are deposited one after another on a substrate through jet print technology to constitute a shaped article of dielectric layers. A predetermined region of the shaped article is bound with a binder to construct a photonic crystal having a three-dimensional structure. The jet print technology is free from limitation on the materials to be used therein, and broadens the configuration latitude in the photonic crystal produced. Photonic crystals having a controlled dielectric constant are easy to obtain through the technology.

Abstract: The present invention provides a process for forming a bulk monocrystalline gallium-containing nitride, i.e. GaN etc., on the surface of heterogeneous substrate, i.e. SiC etc., comprising the steps of forming a supercritical ammonia solvent containing ion or ions of alkali metals in an autoclave, dissolving a gallium-containing feedstock in the supercritical ammonia solvent to form a supercritical solution in which the feedstock is dissolved, and crystallizing gallium-containing nitride on the face of a seed which contains no element of oxygen and has a lattice constant of 2.8 to 3.6 with respect to ao-axis from the supercritical solution, under a condition of a higher temperature and/or a lower pressure than the temperature and/or the pressure where the gallium-containing feedstock is dissolved in the supercritical solvent. Therefore nitride gallium system compound semiconductor device can be formed on a conductive substrate.

Abstract: In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 1650° C. for at least 4 hours, whereby in a lithium tantalate (LT) substrate, sparks are prevented from being generated by the charge up of an electric charge on the substrate surface, and thereby destruction of a comb pattern formed on the substrate surface and breaks or the like in the LT substrate are prevented.

Abstract: The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×105 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3 and N2.

Abstract: This invention provides PEG-modified semiconductor nanoparticles of which fluorescence intensity is effectively inhibited from lowering, which are capable of forming a stable dispersion in water, and which are capable of bonding easily with biomolecules having specific recognition, as well as methods for conveniently preparing such nanoparticles, and a material for biological diagnosis. The water-soluble PEG-modified semiconductor nanoparticles of the present invention includes a structure having PEG of a number average molecular weight of 300 to 20000 having a thiol group at one end, bonded via cadmium to II-VI semiconductor nanocrystals of a core-shell structure having a ZnX (wherein X stands for O, S, Se, or Te) shell.

Abstract: This invention is a method for forming a chemical conversion coating on ferrous metal substrates, the chemical solutions used in the coating and the articles coated thereby. By modifying and combining the features of two existing, but heretofore unrelated, coating technologies, a hybrid conversion coating is formed. Specifically, a molecular iron/oxygen-enriched intermediate coating, such as a dicarboxylate or phosphate, is applied to a ferrous substrate by a first oxidation. The intermediate coating pre-conditions the substrate to form a surface rich in molecular iron and oxygen in a form easily accessible for further reaction. This oxidation procedure is followed by a coloring procedure using a heated (about 120-220 F) oxidizing solution containing alkali metal hydroxide, alkali metal nitrate, alkali metal nitrite or mixtures thereof, which reacts with the iron and oxygen enriched intermediate coating to form magnetite (Fe3O4).

Abstract: The invention relates to a crystallization method for forming crystals of a substance in a solution, a suspension, or a mixture of liquids, in particular ice crystals from an aqueous solution or organic crystals from an organic melt. The method comprises the steps of crystallizing the solution to form a crystal slurry by means of cooling in a heat exchanger and feeding the crystal slurry from an outflow side of the heat exchanger to an inflow side of the heat exchanger via a recirculation duct and separating at least a part of the crystals from the liquid. A recirculation pump is included in the recirculation duct wherein the slurry is continuously supplied through the recirculation duct such that the crystals are homogeneously distributed in the duct and the heat exchanger and such that the under cooling at the outlet of the heat exchange is the equilibrium temperature Teq minus 0.5 to 0.9 times the meta-stable region &Dgr;Tmax.

Abstract: Novel microporous crystal morphologies are produced by combining a polar solute, a silicon or phosphorous source, and a structure directing agent. A premixed mixture of at least one surfactants and a hydrophobic solvent is added to the previously mixed three species and shaken to for a reverse microemulsion. The microemulsion is stirred overnight, at about room temperature and then iced for five to ten minutes. A metal source is added and vigorously shaken for about two minutes. The mixture is then aged for about two hours at about room temperature. After which, a mineralizer is added and the resultant mixture aged for about two hours at about room temperature. The mixture is then heated to about 100-220° C. The final novel product is then isolated.

Abstract: This invention concerns nanoscale products, such as electronic devices fabricated to nanometer accuracy. It also concerns atomic scale products. These products may have an array of electrically active dopant atoms in a silicon surface, or an encapsulated layer of electrically active donor atoms. In a further aspect the invention concerns a method of fabricating such products. The methods include forming a preselected array of donor atoms incorporated into silicon. Encapsulation by growing silicon over a doped surface, after desorbing the passivating hydrogen. Also, using an STM to view donor atoms on the silicon surface during fabrication of a nanoscale device, and measuring the electrical activity of the donor atoms during fabrication of a nanoscale device. Such products and processes are useful in the fabrication of a quantum computer, but could have many other uses.

Abstract: The invention is a high-temperature liquid phase growth method using a very thin Si melt layer and characterized in that there is no need of strict temperature difference control between the growing crystal surface and a raw material supply polycrystal, and control of impurity addition is possible. The grown single crystal SiC is characterized in that no fine grain boundaries exist therein, the density of micropipe defects in the growth surface is 1/cm2 or less, and the crystal has a terrace of 10 micrometer or more and a multi-molecular layer step as the minimum unit of a three-molecular layer.

Abstract: An apparatus for growing a biological macromolecular crystal by vaporizing biological macromolecular solution into an oversaturated state. The apparatus includes a first sealed room that receives first crystallizing agent solution, and a communicating tube that communicates with the first sealed room and has a small sectional area for suppressing convection of air. A plurality of droplets of solution dissolving a biological macromolecule and a crystallizing agent therein are held in the communicating tube with the plurality of droplets being separated from each other.

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.

Abstract: This invention discloses the crystal structure of 2C-methyl-D-erythritol 2,4-cyclodiphosphate synthase and crystal structures of said synthase with 4-diphosphocytidyl-2C-methyl-D-erythritol, 4-diphosphocytidyl-2C-methyl-D-erythritol 2-phosphate, cytidine monophosphate, cytidine diphosphate, cytidine and a combination of cytidine monophosphate and 2C-methyl-D-erythritol 2,4-cyclodiphosphate; with or without zinc. Further, computer-aided methods of identifying inhibitors of said synthase and inhibitors are provided.

Abstract: A method for treating a photorefractive effect of an optical device, which comprises irradiating an optical device comprising a lithium niobate single crystal or a lithium tantalate single crystal with an ultraviolet light having a wavelength of at least 300 nm and at most 400 nm so as to suppress and control a photo-induced refractive index change (photorefractive effect) caused on the device.

Abstract: A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defect related deep level states to a temperature above the temperatures required for CVD growth of silicon carbide from source gases, but less than the sublimation temperature of silicon carbide under the ambient conditions to thereby thermodynamically increase the number of point defects and resulting states in the crystal, and then cooling the heated crystal to approach room temperature at a sufficiently rapid rate to maintain a concentration of point defects in the cooled crystal that remains greater than the first concentration.

Abstract: There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016-5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer.

Abstract: Provided is a method of forming quantum dots in which the quantum dots are formed on a thin InxGa1-xAs strained layer. The In(Ga)As quantum dots can be applied to an active layer of an optical device such as a laser diode or an optical detector.

Abstract: In one embodiment, lithium oxide concentration in wafers is adjusted by placing the wafers in a vessel. Vapor of a lithium oxide source is provided and absorbed by the wafers, thereby adjusting the lithium oxide concentration in the wafers. In another embodiment, a two-phase lithium-rich source is placed between wafers such that space in the process chamber is efficiently utilized. In another embodiment, the wafers to be processed are placed in a section of a process chamber (e.g., process tube). Lithium oxide is introduced on end of the process chamber. Carrier gas is also introduced on that end of the process chamber to carry the lithium oxide into the section of the process chamber where the wafers are located. By adjusting the partial pressure of lithium oxide in the process chamber, the rate at which lithium oxide is absorbed by the wafers is controlled.

Abstract: A silicon wafer having a controlled oxygen precipitation behavior such that a denuded zone extending inward from the front surface and oxygen precipitates in the wafer bulk sufficient for intrinsic gettering purposes are ultimately formed. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing such as an epitaxial deposition process while maintaining the ability to dissolve any grown-in nucleation centers.

Abstract: An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.

Abstract: A process for the heat treatment of a silicon wafer, during which the silicon wafer is at least temporarily exposed to an oxygen-containing atmosphere, the heat treatment taking place at a temperature which is selected in such a way that the inequality [ Oi ] < [ Oi ] eq ⁢ ( T ) ⁢ exp ⁢ ( 2 ⁢ σ SiO 2 ⁢ Ω rkT ) is satisfied, where [Oi] is the oxygen concentration in the silicon wafer [Oi]eq(T) is the limit solubility of oxygen in silicon at a temperature T, &sgr;SiO2 is the surface energy of silicon dioxide &OHgr; is the volum

Abstract: The present invention relates to a process and a device for growing single crystals, especially of CaF2. Within the framework of said process, a stack of crucibles (100, 101, . . . , 106, . . . ) containing the starting material is successively moved translationally through a melting chamber (C1) and an annealing chamber (C2), said movement being continuous, smooth and without interruption. The present invention provides for the preparation of fluoride, single crystals, particularly optical fluoride single crystals and optical UV &lgr;<248 nm lithography element blanks, most preferably CaF2.

Abstract: The invention relates to a fabrication method of Ge—Mn magnetic semiconductor with a high Curie temperature. To date, most of researches in magnetic semiconductor are constrained to the magnetic semiconductors from group II-VI and group III-V.

Abstract: A method of joining at least two sintered bodies to form a composite structure, including providing a first multicomponent metallic oxide having a perovskitic or fluorite crystal structure; providing a second sintered body including a second multicomponent metallic oxide having a crystal structure of the same type as the first; and providing at an interface a joint material containing at least one metal oxide containing at least one metal identically contained in at least one of the first and second multicomponent metallic oxides. The joint material is free of cations of Si, Ge, Sn, Pb, P and Te and has a melting point below the sintering temperatures of both sintered bodies. The joint material is heated to a temperature above the melting point of the metal oxide(s) and below the sintering temperatures of the sintered bodies to form the joint. Structures containing such joints are also disclosed.

Abstract: The present invention provides a method by which an oxide material having excellent thermoelectric conversion performance can be produced by a simple process. Specifically, the present invention provides a method for producing a composite oxide single crystal in which a mixture of raw substances including a Bi-containing substance, a Sr-containing substance, a Ca-containing substance, a Co-containing substance and a Te-containing substance, or a mixture of raw substances also including a Pb-containing substance in addition to the above-mentioned substances, is heated in an oxygen-containing atmosphere at a temperature below the melting point of any of the raw substances. The composite oxide single crystal produced by the method of the present invention is a ribbon-shaped fibrous single crystal that is about 10 to 10,000 &mgr;m long, about 20 to 200 &mgr;m wide, and about 1 to 5 &mgr;m thick.

Abstract: A method for treating a photorefractive effect of an optical device, which comprises irradiating an optical device comprising a lithium niobate single crystal or a lithium tantalate single crystal with an ultraviolet light having a wavelength of at least 300 nm and at most 400 nm so as to suppress and control a photo-induced refractive index change (photorefractive effect) caused on the device.

Abstract: A device and process for crystallizing a compound using hydrodynamic cavitation comprising the steps of mixing at least one stream of a solution of such compound to be crystallized with at least one stream of an anti-solvent and passing the mixed streams at an elevated pressure through a local constriction of flow to create hydrodynamic cavitation thereby causing nucleation and the direct production of crystals.

Abstract: A method for fabricating ion exchange waveguides, such as lithium niobate or lithium tantalate waveguides in optical modulators and other optical waveguide devices, utilizes pressurized annealing to further diffuse and limit exchange of the ions and includes ion exchanging the crystalline substrate with a source of ions and annealing the substrate by pressurizing a gas atmosphere containing the lithium niobate or lithium tantalate substrate above normal atmospheric pressure, heating the substrate to a temperature ranging from about 150 degrees Celsius to about 1000 degrees Celsius, maintaining pressure and temperature to effect greater ion diffusion and limit exchange, and cooling the structure to an ambient temperature at an appropriate ramp down rate. In another aspect of the invention a powder of the same chemical composition as the crystalline substrate is introduced into the anneal process chamber to limit the crystalline substrate from outgassing alkaline earth metal oxide during the anneal period.

Abstract: It is disclosed a method of depositing a MCrAlY-coating (6) on the surface (5) of a single crystal (SX) or directionally solidified (DS) article (1). In a first step the article (1) is coated only at a local area by an electroplated method. In a second step the deposited MCrAlY-coating in single crystal form epitaxial with the base material of the article.

Abstract: Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrate via a non-C-plane surface to the growing gallium nitride crystal. Otherwise, oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen, and oxygen to the C-Plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C planes on the seed crystal, maintaining the facets on the C-Plane gallium nitride crystal and allowing oxygen to infiltrate via the non-C-Plane facets to the gallium nitride crystal.

Abstract: Methods of forming an electrically conductive line include providing a stress inducing material within or a compressive stress inducing layer operatively adjacent a crystalline material of a first crystalline phase. In addition, such methods include annealing the crystalline material of the first crystalline phase under conditions effective to transform it to a second crystalline phase. Some methods also include providing stress inducing materials into a refractory metal layer. Example compressive stress inducing layers include SiO2 and Si3N4, while example stress inducing materials include Ge, W and Co. Where the compressive stress inducing material is provided on the same side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is less than the first phase crystalline material. Example and preferred crystalline phase materials having two phases are refractory metal silicides, such as TiSix.