Abstract: A method is provided for producing separated substances, particularly metal compounds, the dopant element amounts of which have been controlled by the use of an apparatus that processes fluid between the processing surfaces of a processing member that can be made to approach/separate and which rotate relative to each other. The substance to be separated is separated by mixing a raw material solution, wherein the substance to be separated is solubilized in a solvent, with the solvent for separation and with the dopant element or dopant element-containing substance solubilized in at least one solvent selected from the solvent of said raw material solution, said solvent for separation or a solvent other than that of said raw material solution or said solution for separation. Separated substances with controlled dopant element amounts are obtained by controlling the solubility of the dopant element or dopant element-containing substance in the solvent for separation.

Abstract: A process of synthesizing nanocrystals, the process including contacting a first precursor, a ligand compound, and a second precursor in a solvent having a boiling point of less than or equal to about 150° C. and a polarity index of less than or equal to 5, and performing a thermal decomposition reaction between the first precursor and the second precursor at a higher pressure than atmospheric pressure and at a higher temperature than a boiling point of the solvent, wherein at least one of the first precursor and the second precursor is a metal-containing precursor.

Abstract: A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

Abstract: A method for preparing photoactive perovskite materials. The method comprises the step of preparing a lead halide precursor ink. Preparing a lead halide precursor ink comprises the steps of: introducing a lead halide into a vessel, introducing a first solvent to the vessel, and contacting the lead halide with the first solvent to dissolve the lead halide. The method further comprises depositing the lead halide precursor ink onto a substrate, drying the lead halide precursor ink to form a thin film, annealing the thin film, and rinsing the thin film with a second solvent and a salt.

Abstract: A process for preparing a composition of mixed crystalline particles from columns 13-15 in which a liquid solution is produced by solubilization in a non-aqueous solvent medium of at least one first precursor chosen from coordination complexes including at least one element E1 from column 13, then the liquid solution is brought into contact with at least one second precursor chosen from the hydrides of at least one element E2 from column 15.

Abstract: The use of a vapor source (10) in an isothermal system (8) to control the crystallization or recrystallization of a sample of solid material (9) which is initially at least partially amorphous and/or at least partially crystalline and contained within the system (8), the vapor source (10) including at least one solvent for crystallizing the solid material, the vapor diffusion (14) of which leads to the crystallization or recrystallization of the sample (9), the vapor source (10) being such that the quantities of heat exchanged within the system during the crystallization or recrystallization of the sample (9) other than the heat of crystallization or recrystallization of the sample are less than approximately 10%, particularly 5%, and advantageously 1% of the heat of crystallization or recrystallization of the sample. The vapor source (10) is preferably a pure solvent or a solvent mixture in which no solute is dissolved.

Abstract: High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated to vary the solution condition in the chambers, thereby simultaneously providing a large number of crystallization environments. Control over changed solution conditions may result from a variety of techniques, including but not limited to metering volumes of crystallizing agent into the chamber by volume exclusion, by entrapment of volumes of crystallizing agent determined by the dimensions of the microfabricated structure, or by cross-channel injection of sample and crystallizing agent into an array of junctions defined by intersecting orthogonal flow channels.

Abstract: A method for producing a nitride crystal, comprising growing a nitride crystal on the surface of a seed crystal put in a reactor while the temperature and the pressure inside the reactor that contains, as put thereinto, a seed crystal having a hexagonal-system crystal structure, a nitrogen-containing solvent, a starting material, and a mineralizing agent containing fluorine and at least one halogen element selected from chlorine, bromine and iodine are so controlled that the solvent therein could be in a supercritical state and/or a subcritical state to thereby grow a nitride crystal on the surface of the seed crystal in the reactor.

Abstract: A method of producing a grown single crystal diamond substrate comprising: (a) providing a first diamond substrate which presents a (001) major surface, which major surface is bounded by at least one <100> edge, the length of the said at least one <100> edge exceeding any dimension of the surface that is orthogonal to the said at least one <100> edge by a ratio of at least 1.3:1; and (b) growing diamond material homoepitaxially on the (001) major surface of the diamond material surface under chemical vapour deposition (CVD) synthesis conditions, the diamond material growing both normal to the major (001) surface, and laterally therefrom.

Abstract: A high pressure apparatus and related methods for processing supercritical fluids are disclosed. In certain embodiments, the present apparatus includes a capsule, a heater, at least one ceramic ring or multiple rings, optionally, with one or more scribe marks and/or cracks present. In certain embodiments, the apparatus has a metal sleeve containing each ceramic ring. The apparatus also has a high strength enclosure, end flanges with associated insulation, and a power control system. In certain embodiments, a high pressure apparatus is constructed such that the diametric annular gap between the outer diameter of the heater and the ceramic ring is selected to provide radial load-bearing contact above a particular temperature and pressure. In certain embodiments, the apparatus is capable of accessing pressures of 0.2 GPa to 2 GPa and temperatures of 400° C. to 1200° C.

Abstract: This invention provides non-spherical nanoparticle compositions that are the reaction product of a source of a Group 12, 13, 14, or 15 metal or metalloid; a source of a Group 15 or 16 element; and a source of a quaternary ammonium compound or phosphonium compound; wherein nanoparticle tetrapods comprise 75-100 number percent of the nanoparticle products.

Abstract: A process for preparing various morphology NTE compound ZrW0.5Mo1.5O8 comprising: preparing 0.4M Zr4+ solution, 0.2M W6+ solution and 0.6M Mo6+ solution with zirconyl nitrate, ammonium tungstate and ammo-nium molybdate separately, mixing them with the same volume and stirring until they are mixed well, adding 6-12M hydrochloric acid with the volume of 1/5-1/7 of the mixed solution, or adding 6-12M hydrochloric acid with the volume of 1/3-1/5 of the mixed solution and 0.2-0.4 wt % ammonium monoacid phosphate of all raw materials, or adding 9-18M sulfuric acid with the volume of 1/10-1/5 of the mixed solution, well mixing, transferring the mixed solution into the hydrothermal reactor, reacting at 150-180° C. for 8-25 hours, washing, drying and getting the precursor, heating the precursor at 480-500° C. for more than 5 hours and obtaining the product is provided.

Abstract: Disclosed is a technology of producing quantum dots that are nano-size semiconducting crystals. A quantum dot producing apparatus includes a mixer for mixing precursor solutions, and a heating furnace with a plurality of heating areas providing different temperature conditions to heat the precursor mixture. Between the heating areas, a buffer may be installed which provides a low-temperature condition to prevent addition nucleation. Through this configuration, nucleation is separated from nuclear growth, uniformity in particle size of quantum dots is improved, which enables the mass-production of quantum dots, rather than a quantum dot producing apparatus with a single heating area that provides a constant temperature condition.

Abstract: A surface-enhanced Raman spectroscopy (SERS) substrate formed from a plurality of monolayers of polyhedral silver nanocrystals, wherein at least one of the monolayers has polyvinypyrrolidone (PVP) on its surface, and thereby configured for sensing arsenic is described. Highly active SERS substrates are formed by assembling high density monolayers of differently shaped silver nanocrystals onto a solid support. SERS detection is performed directly on this substrate by placing a droplet of the analyte solution onto the nanocrystal monolayer. Adsorbed polymer, polyvinypyrrolidone (PVP), on the surface of the nanoparticles facilitates the binding of both arsenate and arsenite near the silver surface, allowing for highly accurate and sensitive detection capabilities.

Abstract: An object of the present invention is to produce a non-conventional high-quality BNA single crystal. Another object of the present invention is to provide a process for producing the above-described high-quality BNA single crystal. Specifically, the present invention provides a BNA crystal characterized by having a half-value width of diffraction peak X-ray intensity of 100 seconds or less in a rocking curve measurement by X-ray diffraction method.

Abstract: A method of preparing nanostructured single crystal silver, comprising placing a high-conductive molded porous active carbon containing chloride ions, which has been reductively treated, into a silver-containing precursor solution. After several hours at room temperature, the nanostructured single crystal silver grows on the surface of the active carbon. The silver-containing precursors and appropriate amount of chlorine provide a crystal nucleus and a slow stable crystal growth environment which are required for single crystal silver growth, and said nanostructured silver single crystals could be obtained with various morphologies by controlling the concentration of the silver-containing precursor solution and the growth time.

Abstract: A method of making fancy pale blue or fancy pale blue/green CVD diamond material is described. The method comprises irradiating single crystal diamond material that has been grown by a CVD process with electrons to introduce isolated vacancies into the diamond material, the irradiated diamond material having (or after a further post-irradiation treatment having) a total vacancy concentration [VT] and a path length L such that [VT]×L is at least 0.072 ppm cm and at most 0.36 ppm cm, and the diamond material becomes fancy pale blue or fancy pale blue/green in color. Fancy pale blue diamonds are also described.

Abstract: Provided is a process for producing colloidal crystals from which a large single crystal reduced in lattice defects and unevenness can be easily produced at low cost without fail. The process for colloidal crystal production comprises: preparing a colloidal polycrystal dispersion in which colloidal crystals precipitate at a given temperature (preparation step); introducing into a vessel The colloidal polycrystal dispersion in the state of containing fine colloidal polycrystals precipitated (introduction step); and melting the colloidal polycrystals and then recrystallizing the molten polycrystals (recrystallization step). The crystals thus obtained have fewer lattice defects and less unevenness than the original polycrystals.

Abstract: The present invention relates to channel type cyclodextrin crystals, particularly channel type ?-cyclodextrin crystals, to a method for producing channel type cyclodextrin crystals, and products comprising channel type cyclodextrin crystals.

Abstract: A colloidal material and a process for manufacturing it and uses of the colloidal material for manufacturing optic devices. The colloidal material is of formula AnXm, wherein A is an element selected from groups II, III or IV of the periodic table; X is a metal selected from groups V or VI; and in the selection of the pair (A, X), the groups of the periodic table of A and X, respectively, are selected from the following combinations: (group II, group VI), (group III, group V) or (group IV, group VI); and n and m are such that AnXm is a neutral compound. The colloidal compound may be CdS, InP, or PbS. The process includes a step of solution phase decomposition of a mixture of X and a carboxylate of formula A(R—COO)p in the presence of a non- or weakly-coordinating solvent, and injecting an acetate salt or acetic acid in the mixture; wherein p is an integer between 1 and 2; R is a linear or branched C1-30alkyl group.

Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

Abstract: A method of producing a CVD single crystal diamond layer on a substrate includes adding into a DVD synthesis atmosphere a gaseous source comprising silicon. The method can be used to mark the diamond material, for instance to provide means by which its synthetic nature can more easily be determined. It can also be exploited to generate single crystal diamond material of high color.

Abstract: A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonothermally. The seed orientation and mounting geometry are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. The method is scalable up to very large volumes and is cost effective.

Abstract: By using a coating method, which is a method of manufacturing a transparent conductive film, with low-temperature heating lower than 300° C., a transparent conductive film with excellent transparency, conductivity, film strength, and resistance stability and a method of manufacturing this film are provided. In the method of manufacturing a transparent conductive film, a heat energy ray irradiating step is a step of irradiating with the energy rays while heating under an oxygen-containing atmosphere to a heating temperature lower than 300° C. to form the inorganic film, and the plasma processing step is a step of performing the plasma processing on the inorganic film under a non-oxidizing gas atmosphere at a substrate temperature lower than 300° C. to promote mineralization or crystallization of the film, thereby forming a conductive oxide fine-particle layer densely packed with conductive oxide fine particles having a metal oxide as a main component.

Abstract: The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.

Abstract: Methods of making electrically conductive, doped zinc oxide nanowires and nanowire films are provided. The methods comprises the steps of forming an aqueous solution comprising a dopant-containing precursor salt, a zinc-containing precursor salt and a pH buffering agent and heating the aqueous solution to a temperature below its boiling point in the presence of seed crystals, whereby doped zinc oxide nanowires are grown in situ from the seed crystals in the aqueous solution.

Abstract: Provided are a method of manufacturing a metal oxide and a substrate for a solar cell. The method of manufacturing the metal oxide according to the inventive concept includes mixing a metal precursor material, a basic material, amphiphilic molecules and distilled water to prepare a metal precursor solution, performing a first heat treatment with the metal precursor solution to form a metal oxide, and performing a second heat treatment with the metal oxide to form a pair of metal oxide disks having a single crystalline structure. A pair of zinc oxide disks includes a first disk, and a second disk separated from the first disk in a perpendicular direction to the first disk.

Abstract: The subject is providing a crystallizing device of a biopolymer, which made to form biopolymer crystal efficiently in crystallization solution of a small amount of biopolymers by applying a low voltage and not to make an electrode disturb but observable a state of crystal formation. As an electrode for applying an electric field to a biopolymer solution, a transparent conductor, which does not disturb crystal formation, is used. Between the transparent conductor electrodes 2s, the electric insulating member 4 is placed and the crystallization solution 1 for a small amount of biopolymers is maintained inter-electrode. A biopolymer is efficiently crystallized by applying a low voltage supplied from the voltage generator 5 to the transparent conductor electrode 2. A crystal formation state of a biopolymer is optically observable from the electrode side of a transparent conductor. Orientation control of the biopolymer can be performed by an electric field formed by the above-mentioned voltage application.

Abstract: The present invention relates generally to nanocomposite materials. The present invention relates more particularly to hybrid fibers as well as devices including them and methods for making them. Accordingly, one aspect of the invention is a hybrid fiber including a plurality of nanowires, each nanowire having a length, a width, and a thickness, the length being at least 10 times the width and at least 10 times the thickness; and a plurality of binder elements, each binder element having a length, a width, and a thickness, each substantially smaller than the average length of the nanowires and at least one of which is less than about 10 nm in dimension, the binder elements being arranged to intercouple individual nanowires. In certain embodiments, the binder elements are carbon nanotubes, and the nanowires are formed from silicon carbide.

Abstract: Quantum dots and methods of making quantum dots are provided.

Abstract: Quantum dots and methods of making quantum dots are provided.

Abstract: The present invention relates to a method for producing semicrystalline polymer material, wherein the predominantly amorphous raw polymer material, in particular granules, to be treated is introduced into a crystallization reactor (1) and is partially crystallized there by being heated, but without melting, and subsequently the semicrystalline polymer material obtained in such a way is removed from the crystallization reactor (1) and at least part of said semicrystalline polymer material is diverted and mixed back into the crystallization reactor (1) in order to reduce the adhesive tendency of the polymer material. According to the invention, the diverted semicrystalline polymer material is combined and mixed with the raw polymer material before being mixed back into the crystallization reactor (1), and the mixture is then introduced into the crystallization reactor (1).

Abstract: A solution-stirring top-seeded solution-growth method for forming CLBO of the type where water is added to a precursor mixture, where heavy water is substituted for the water.

Abstract: Disclosed herein is a method of crystallizing a semiconductor nanocrystal population including suspending the semiconductor nanocrystal population in a high boiling point solvent to form a solution and heating the solution to a temperature of approximately 100° C. to approximately 400° C. Further disclosed is a method of crystallizing a semiconductor nanocrystal population including drying the semiconductor nanocrystal population into a powder, placing the powder into a ball mill, and ball milling the powder for a duration of time.

Abstract: A method for crystallizing a Geobacillus strain T1 polypeptide under gravity or microgravity conditions is provided. A purified protein to be crystallized is provided, the purified protein being either thermostable T1 lipase or thermostable F16L lipase. A protein solution is prepared, comprising the purified protein, a buffer solution having a working pH of at least 8.5, and between 3-5% glycerol. A reservoir solution is prepared, comprising 0.1M MES, 0.1M NaH2PO4, 0.1M KH2PO4, and 1 M NaCl, and having a working pH of 6.5 or 6.6. The protein and reservoir solutions are combined to obtain a protein droplet, and protein crystals are obtained from the protein droplet by hanging-drop vapor diffusion.

Abstract: The present disclosure relates to crystallizing a chemical substance(s) using ultrasound. Methods are provided for screening a chemical substance according to its solid forms by using ultrasound to generate new or unusual solid forms. Methods are also provided for crystallizing a chemical substance by novel techniques that include sonication. The present disclosure also relates to cocrystallization using ultrasound. Methods are provided for preparing cocrystals of an active agent and a guest by sonicating and crystallizing. Methods are also provided for screening a sample according to solid state phases (such as cocrystals and salts) and include generating a cocrystal from the sample using ultrasound.

Abstract: A metal nanonetwork includes metal nanostructures that are joined by metallic bond. The joined part between the metal nanostructures includes a fillet part. In the joined part between the metal nanostructures, the distance between the central axis of one metal nanostructure and the central axis of another metal nanostructure is smaller than the sum of the radii of both metal nanostructures. The metal nanostructure is a metal nanowire. A first method for producing the metal nanonetwork includes a process of forming an oxide film on the outermost surface of the metal nanostructure, and a process of reducing the oxide film at the joined parts of a plurality of the metal nanostructures to thereby join the metal nanostructures.

Abstract: Disclosed are ruthenium nanoparticles having an essentially face-centered cubic structure. Disclosed is a method for producing ruthenium nanoparticles having an essentially face-centered cubic structure. This production method includes a step (i) of maintaining a solution containing ruthenium (III) acetylacetonate, polyvinylpyrrolidone, and triethylene glycol at a temperature of 180° C. or higher.

Abstract: Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment.

Abstract: Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

Abstract: A crystallization device is for protein crystallization with a small amount of a sample in the liquid to liquid diffusion method. It is easy to fill the device with protein solution and precipitant solution and easy to pick up grown crystals from the device. The device comprises a channel plate made of polydimethylsiloxane (PDMS) and the first and second cover sheets made of polyethylene terephthalate. The channel plate includes at least one elongated channel having one side which extends in the longitudinal direction of the channel, the one side being exposed at the bottom surface of the channel plate. The channel has both ends which communicate with a protein solution inlet and a precipitant solution inlet respectively. The channel also communicates midway with a gel inlet and a vent hole. When picking up grown crystals from the device, the second cover sheet is cut off with a cutter knife so that the channel is exposed.

Abstract: There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

Abstract: An improved high pressure apparatus and methods for processing supercritical fluids is described. The apparatus includes a capsule, a heater, and at least one ceramic ring contained by a metal sleeve. The apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C.

Abstract: The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.

Abstract: The present invention provides a method of producing a crystalline metal sulfide nanostructure. The metal is a transitional metal or a Group IV metal. In the method, a porous membrane is placed between a metal precursor solution and a sulfur precursor solution. The metal cations of the metal precursor solution and sulfur ions of the sulfur precursor solution react, thereby producing a crystalline metal sulfide nanostructure.

Abstract: A method for growing islands of semiconductor monocrystals from a solution on an amorphous substrate includes the procedures of depositing a semiconductor-metal mixture layer, applying lithography and etching for forming at least one platform, heating the at least one platform, and saturating the semiconductor-metal solution until a monocrystal of the semiconductor component is formed. The procedure of depositing a semiconductor-metal mixture layer, includes a semiconductor component and at least one other metal component, is performed on top of the amorphous substrate. The procedure of applying lithography and etching to the semiconductor-metal mixture layer and a portion of the amorphous substrate is performed for forming at least one platform, the at least one platform having a top view shape corresponding to crystal growth direction and habit respective of the semiconductor component.

Abstract: A method is described for the manufacture of semiconductor nanoparticles. Improved yields are obtained by use of a reducing agent or oxygen reaction promoter.

Abstract: Single, acentric, rhombohedral, fluoroberyllium borate crystals of a size sufficient for use in a variety of laser and non-optical applications are formed by a hydrothermal method.

Abstract: The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of producing the single crystal, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content and an optical element using the same, as well as a method of producing the single crystal. The magnetic garnet single crystal is grown by the liquid phase epitaxial process and is represented by the chemical formula BixNayPbzM13-x-y-zFe5-wM2wO12 (M1 is at least one element selected from Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is at least one element selected from Ga, Al, In, Ti, Ge, Si and Pt, provided that 0.5<x?2.0, 0<y?0.8, 0?z<0.01, 0.19?3-x-y-z<2.5, and 0?w?1.6).

Abstract: A novel metal polyoxide is a compound in which a plurality of oxygen elements are coupled to a transition metal element, and shows surface electrical resistance in addition to antibacterial and deodorizing activities. More specifically, the metal polyoxide contains manganese (III) molybdate and cobalt (III) molybdate having a novel structure. A preparation method thereof and a preparation method of a functional fiber or textile prepared using the same are provided.