Abstract: In a method of and an apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gasses are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gasses are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.

Abstract: A novel substrate for growth of material by chemical phase deposition includes a temperature monitoring zone formed by applying a coating of growth preventing material (e.g., SiO.sub.x or SiN.sub.x) to a portion of the substrate. The temperature of the substrate can be monitored during growth of a desired material using an optical pyrometer having its field of view directed at the temperature monitoring zone.

Abstract: A multi-featured control system which improves the manufacturing capability of the thin-film semiconductor growth process. This system improves repeatability and accuracy of the process, reduces the manpower requirements to operate MBE, and improves the MBE environment for scientific investigation. This system has three levels of feedback control. The first level improves the precision and tracking of the process variables, flux, and substrate temperature. The second level comprises an expert system that uses sensors to monitor the status of the product in order to tailor the process plan in real time so that the exact qualities desired are achieved. The third level features a continuously evolving neural network model of the process which is used to recommend the recipe and command inputs to achieve a desired goal. The third level is particularly useful during the development process for new materials.

Abstract: A system for monitoring the growth of crystalline films on stationary or rotating substrates includes a combination of some or all of the elements including a photodiode sensor for detecting the intensity of incoming light and converting it to a measurable current, a lens for focusing the RHEED pattern emanating from the phosphor screen onto the photodiode, an interference filter for filtering out light other than that which emanates from the phosphor screen, a current amplifier for amplifying and converting the current produced by the photodiode into a voltage, a computer for receiving the amplified photodiode current for RHEED data analysis, and a graphite impregnated triax cable for improving the signal to noise ratio obtained while sampling a stationary or rotating substrate. A rotating stage for supporting the substrate with diametrically positioned electron beam apertures and an optically encoded shaft can also be used to accommodate rotation of the substrate during measurement.

Abstract: A real-time multi-zone semiconductor wafer temperature and process uniformity control system for use in association with a semiconductor wafer fabrication reactor comprises a multi-zone illuminator (130), a multi-point temperature sensor (132), and process control circuitry (150). The method and system of the invention significantly improved wafer (60) temperature control and process uniformity. The multi-zone illuminator module (130) selectively and controllably heats segments of the semiconductor wafer (60). Multi-point temperature sensor (132) independently performs pyrometry-based temperature measurements of predetermined points of the semiconductor wafer (60). Process control circuitry (150) operates in association with the multi-zone illuminator (130) and the multi-point temperature sensor (132) for receiving the temperature measurements and selectively controlling the illuminator module to maintain uniformity in the temperature measurements.

Abstract: A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly accurate control of the dispersion of thickness of the thin film layer without requiring the substrate to be removed from the reaction vessel for chemical vapor-phase corrosion on each occasion of the measurement or necessitating installation of a mechanism for alteration of the position of measurement inside or outside the reaction vessel are disclosed. The measurement of film thickness is carried out by keeping observation of interference fringes due to distribution of thickness of the film layer.

Abstract: Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.

Abstract: A process and apparatus for in situ measurement of the thickness of a thin ilm on a substrate using interference effects in the thin film. Thermal radiation of the substrate is utilized as a source of interfering bundles of electromagnetic radiation which intensity thereof is measured with a charge-coupled-device camera, and signal-processing electronics is utilized for determining in accordance with the Airy formula the thickness of the thin film on the substrate in the planar direction of the thin film and the index of refraction thereof. The low time constant for the measurement and evaluation enables the process for the recording of measurements be used for the control of coating or removal procedures.

Abstract: An optically transparent furnace (10) having a detection apparatus (29) with a pedestal (12) enclosed in an evacuated ampule (16) for growing a crystal (14) thereon. Temperature differential is provided by a source heater (20), a base heater (24) and a cold finger (26) such that material migrates from a polycrystalline source material (18) to grow the crystal (14). A quartz halogen lamp (32) projects a collimated beam (30) onto the crystal (14) and a reflected beam (34) is analyzed by a double monochromator and photomultiplier detection spectrometer (40) and the detected peak position (48) in the reflected energy spectrum (44) of the reflected beam (34) is interpreted to determine surface temperature of the crystal (14).