Abstract: In a thin film deposition apparatus, means for depositing a film on a substrate and means for etching the deposited film to make flat the surface thereof, are provided in a reaction vessel independently of each other. This apparatus can rapidly deposit the film without rising the temperature of the substrate excessively. Further, since the deposition means and etching means are independent of each other, the deposition of a film on the substrate and the planarization of the surface of the deposited film can be achieved under various conditions.

Abstract: To be able to treat the inside surface of metallic tubes by means of an electric glow discharge at pressures lower than heretofore in order to heat or coat such a surface, for example, an auxiliary electrode is positioned inside an article to be treated such as a tube extending close to the tube wall and parallel to the tube axis, with the auxiliary electrode and the tube being rotatable relative to each other. The apparatus and method are primarily for coating the inside of tubes.

Abstract: For use in placing a semiconductor substrate in molecular beam epitaxy apparatus, a holder comprises a heat conductor member opposite to a substrate. The substrate is received in a space formed in a supporting member and is in engagement with a flange portion radially inwardly projected from a peripheral surface of the space. The heat conductor member is heated by a heater in the molecular beam epitaxy apparatus. This results in effective conduction of heat to the substrate. The substrate is easily put in the beam epitaxy apparatus and removed therefrom. The heat conductor member may be of pyrolytic graphite or sintered graphite.

Abstract: A method and apparatus for heating semiconductor wafers characterized by the release of preheated nitrogen into an oven to considerably reduce heating time for the wafers. The oven is evacuated prior to the release of the preheated nitrogen.

Abstract: An apparatus for photochemical vapor deposition includes an outer reactor shell and a concentric inner shell which define a photochemical reaction zone. A radiation source is centrally located within the transparent inner shell, which isolates the radiation source from the vapor phase reactants present in the reaction zone. A rotating gas manifold is located within the reaction zone to uniformly distribute the vapor phase reactants within the reaction zone. Protective liquid is continually applied to the outer surface of the inner shell and spread into a thin film by wiper blades, to prevent deposition of reaction products onto the outer wall of the inner shell. The central location of the radiation source, along with the protective liquid film, make optimum usage of the reaction-inducing radiation generated by the radiation source. In addition, the rotating gas manifold promotes uniform deposition of layers of selected materials on substrates placed within the reaction zone.

Abstract: An apparatus for plasma treatment, capable of plasma-treating works of resin material by irradiating the surfaces of the works with a microwave discharge plasma within a vacuum reaction chamber. A plasma introducing port is formed in the wall of the reaction chamber. A plasma-irradiating pipe is connected to the plasma introducing port for injecting the plasma into the reaction chamber to irradiate the surfaces of the works. A discharge port is formed in the wall of the reaction chamber to reduce the internal pressure of the reaction chamber. A plasma diffuser includes a rotatable vane for diffusing the flow of plasma to distribute uniform density of plasma in the reaction chamber. A plurality of deflecting plates projecting from the inner wall of the reaction chamber toward the interior thereof may also be provided to diffuse the flow of plasma in the reaction chamber.

Abstract: A continuous, in-line deposition system is disclosed for coating large substrates. The apparatus includes loadlock chambers for loading and unloading substrates arranged in carriers. The carriers transport through the apparatus a plurality of pairs of substrates with their principal faces, that is faces to be coated, held in a plane that is both parallel to the electric field of the glow discharge reaction and perpendicular to the direction of motion of the substrates through the apparatus.

Abstract: This invention provides a process and an apparatus for baking an organic coating which has been applied to a substrate. Such coated substrates are conventionally baked in a furnace using a mixture of combustion gas and air. This process in uneconomical in terms of energy consumption and also involves cleansing of used gases before they can be discharged into the atmosphere. The present invention provides a rapid process for baking such coatings in an inert gas atmosphere by means of short-wavelength infra-red rays. Coatings are heated in such a penetrating manner than they are baked at the substrate/coating interface and this prevents the formation of swellings.

Abstract: The present invention relates to a method of heat-treating a semiconductor wafer by utilizing an electromagnetic wave. The wafer is floated by the blast of a gas and is held in a non-contacting state, and the electromagnetic wave, such as microwave, is projected on the wafer in this state so as to heat it. According to the present invention, only the wafer is heated and, hence, the wafer can be heat-treated uniformly and efficiently with great precision.

Abstract: Compact and versatile apparatus for deposition of multi-layer coatings on substrates at reduced pressure comprises at least 3 and preferably at least 4 evacuable deposition chambers, means for evacuating each of said deposition chambers and coating means in each of said deposition chambers for depositing a coating layer on a substrate; an evacuable transfer chamber with closable ports between said transfer chamber and each of said coating chambers for transfer of a substrate to be coated between said deposition chambers; means for evacuating said transfer chamber; and transfer means for transferring a substrate between said deposition chambers via the transfer chamber. The apparatus is especially useful for the production of photovoltaic cells in which the active layers are formed of amorphous silicon deposited from a glow discharge.

Abstract: Improved apparatus (10), including passage (22) for inter-cushion processing and transport of substrates (12) towards and from process modules (14) and (16) for main processing of said substrates (12) at non-atmospheric pressure in a series of successive process chambers (64), located in between successive processors/transporters (66), in which secondary processing and transport of said substrates (12) take place.

Abstract: A cusp field is applied between a plasma source of a vacuum chamber of a plasma anodization system and a substance such as a semiconductor substrate or a metal plate to be oxidized so that the substance may not be adversely affected by the plasma. The temperature control can be conducted independently of the plasma generating condition because the substance to be treated is not adversely affected by the plasma in a direct manner.

Abstract: A radio frequency, plasma-enhanced, vapor deposition reactor has apparatus (3-7) for providing a flow of silane in an inert gas carrier, a deposition chamber (20) formed between a pair of flow restrictors (18, 27) and an RF coil (22) for providing inductive coupling of RF power (24) for plasma excitation, disposed downstream of a fixture (8) for holding the substrate upon which amorphous silicon is to be disposed. A baffle (30) provides diversion of the gas flow toward a gravity trap chamber (31), thereby collecting some particulates and prolonging the cycle time before plugging of the vacuum pump (7) can occur.

Abstract: A gas is introduced into a vacuum chamber after the vacuum chamber is evacuated, and a plasma is generated within at least part of the vacuum chamber. The specimen surface is exposed to the plasma so that the surface is treated. A plurality of different gases, such as SF.sub.6, N.sub.2, and the like, are used as the gas being introduced. The quantity of the gas is changed during the surface treatment. A controller is used as a mechanism for changing the quantity of gas introduced. The controller is operated in accordance with a predetermined program, or by signals obtained by detecting the surface conditions of the specimen during the surface treatment.

Abstract: A laser powered chemical vapor deposition process and apparatus for producing heterogeneous nucleation and sustained growth of films on substrates. The process is conducted at low laser intensities and high reactant pressures so as to operate in the thermal domain. Semiconductor films and fabrication of fiber optic waveguides are illustrated in the process.

Abstract: A trough and trough support for conveying liquids along open modular chuting is disclosed. The trough support is releasably secured to the sidewall of the open modular chute. The trough, in a preferred embodiment, is pleated to allow the trough to curve.

Abstract: Improved apparatus (10), including passage (22) for inter-cushion processing and transport of substrates (12) towards and from process modules (14) and (16) for main processing of said substrates (12) at non-atmospheric pressure in a series of successive process chambers (64), located in between successive processors/transporters (66), in which secondary processing and transport of said substrates (12) take place.

Abstract: Apparatus for shielding substrates from plasma developed adjacent the ends of r.f. powered cathodes, the apparatus adapted for use in a glow discharge deposition system in which successive amorphous semiconductor layers are deposited onto a substrate. The deposition system includes at least one deposition chamber into which process gases are introduced and disassociated in the presence of electrodynamic fields created between a cathode and a substrate. The shielding apparatus of the present invention comprises a pair of relatively narrow, elongated plates adapted to be spacedly disposed in the deposition chamber so as to lie in a plane substantially parallel to the plane of the substrate. By disposing one of the plates adjacent each of the ends of the cathode, only homogeneous semiconductor films formed by uniform electrodynamic fields produced adjacent the central portion of the cathode are deposited onto the substrate.

Abstract: Method for reactive vapor deposition of compounds of metals and semi-conductors on at least one substrate by glow discharge. Into a space between a magnetron cathode (1) with a target (5) and the substrate (11) an inert gas and a reaction gas for the formation of the desired compound with the target material are separately introduced. Two solve the problem of making it possible to maintain the vapor deposition process stable over long time periods, according to the invention, a flow restriction is introduced between the target (5) and the substrate (11) by a diaphragm (20), which amounts to at least 40% of the cross-section of the space. Further, the inert gas is fed between target (5) and aperture (20) at the periphery of the target.

Abstract: A triode apparatus with magnetic enhancement for dry processing semiconductor wafers and the like. A conductive substantially cylindrical chamber contains a cathode that is connected to a first source of AC power. A wafer stage mounted on the inside of the chamber wall is connected to a second source of AC power. The chamber has means for connection to a reference voltage potential. Means for generating a magnetic field perpendicular to the electric field generated between the chamber walls and the cathode is also provided.

Abstract: Glow discharge method and apparatus useful for coating electrophotographic photoreceptors in the form of drums and plates are described. Improved photoreceptors using amorphous silicon which accepts a high surface voltage in the dark and discharges to a low residual voltage under illumination are also described.

Abstract: An apparatus for producing high purity silicon melts utilizes a solid silicon body which is drilled to provide bores into which electrodes are inserted. The electrodes preferably are also of silicon and an electric arc-current is passed through the electrodes to generate an arc which melts out the body to define a cavity therein containing the melt. The melt may be used for the drawing of a silicon bar or for the deposition of silicon in vapor form from the melt upon a substrate in a vacuum chamber.

Abstract: This invention relates to apparatus for the cryopreparation of biological tissue samples for ultrastructural analysis. The use of the apparatus comprises vitrifying a biological tissue sample under cryogenic temperature conditions and ultra low vacuum conditions. The depressurized, vitrified tissue sample is brought to equilibrium in a sample holder at a temperature of less than -140.degree. C. The tissue sample is then dehydrated while maintained in a state of thermal equilibrium. After reaching equilibrium the tissue sample is optionally infiltrated with a degassed resin followed by a polymerization of the resin to form an embedded tissue sample.

Abstract: A system and methods for very high rate deposition and etching using a separate, substantially enclosed plasma generation chamber within a conventional semiconductor-processing vacuum chamber. A pressure differential is established between the chambers and a low frequency, high flux density, highly dissociated plasma is generated within the smaller internal chamber and projected by the pressure differential to a selected region of the processing chamber. The gas composition, flow rates, power and pressure are readily tailored to the particular etching or deposition process. In addition, the small internal chamber can be rotated and translated to expand the area of coverage. Etch rates of up to 60,000 angstroms per minute and useful quality dielectric film deposition rates of up to approximately 6,000 angstroms per minute have been achieved to date.

Abstract: Apparatus and method for evaporation arc stabilization including a target having a surface of material to be evaporated; circuitry for establishing an arc on the target surface for evaporating the target material, the arc being characterized by the presence of charged particles and a cathode spot which randomly migrates over the target surface; and a confinement ring contacting and surrounding the target surface, the ring being composed of a material such as boron nitride having (a) a secondary emission ratio less than one at the mean energies of the charged particles of the arc and (b) a surface energy less than that of the evaporated target material to thereby confine the cathode spot to the target surface. The confinement ring is employed as a cover for a permeable ring to prevent migration of the cathode spot onto the permeable ring during initial clean-up of the target.

Abstract: Apparatus and method for evaporation arc stabilization including a permeable target having a surface of material to be evaporated; circuitry for establishing an arc on the target surface for evaporating the target material, the arc being characterized by the presence of charged particles and a cathode spot which randomly migrates over the target surface; a confinement ring contacting and surrounding the target surface, the ring being composed of a material such as boron nitride and a permeable ring surrounding the target for effecting substantially uniform evaporation of the permeable target material from the target surface.

Abstract: A semiconductor fabricating apparatus is capable of fabricating a high quality semiconductor with utilization of crystal growth, thermal oxidation of CVD membrane growth at low temperature. The semiconductor fabricating apparatus includes a reaction chamber having a gas inlet and a gas outlet, an insulative support means disposed in the reaction chamber for supporting semiconductor wafers thereon, an infrared lamp means for irradiating exposed surfaces of the semiconductor wafers and an ultra-violet lamp means for irradiating the exposed surfaces of the semiconductor wafers overlappingly with the infrared irradiation.

Abstract: A vapor deposition system is provided which uses electromagnetic radiation for heating of a semiconductor wafer. The source of the electromagnetic radiation is typically a lamp having a color temperature corresponding to a wavelength in the range of 0.3 to 0.9 micrometers, and generally for a particular semiconductor to an energy greater than the energy required to cause transitions from the valence band to the conduction band of the semiconductor material used to construct the wafer and more preferably to a color temperature corresponding to an energy substantially at or above the energy required for direct (vertical) transitions from the valence band to the conduction band, thereby providing very high absorption of the incident radiation and very efficient direct heating of the wafer. No substrate is required for conducting heat to the wafer. The radiation is directed by a reflector through a window forming one side of the deposition chamber and impinges directly on the surface of the wafer.

Abstract: The apparatus comprises a consumable cathode (1) having a working end face (3), a solenoid (4) coaxially disposed relative to the consumable cathode (1) and having a tubular anode (5) received therein, an igniting electrode (6). Solenoid (4) encircles the tubular anode (5) and the consumable cathode (1), the number of turns per unit length of the solenoid (4) around the consumable cathode (1) being greater than the number of turns per unit length in the remaining portion of the solenoid (4).Moreover, the solenoid (4) extends beyond the igniting electrode (6) at the side opposite to the working end face (3) by a length exceeding half the length of the portion of the solenoid (4) disposed around the consumable cathode (1).

Abstract: A continuous vacuum treating apparatus having a vacuum treating chamber for continuously treating the surface of a plastic molding under a vacuum, and at least one auxiliary vacuum chamber disposed at each of the upstream and downstream sides of the vacuum treating chamber. Each auxiliary vacuum treating chamber includes a pair of seal rolls contacting each other, means for effecting seals between the seal rolls and cases over the entire axial lengths of the rolls, and means for effecting seals between both end surfaces and the cases.

Abstract: A plasma reactor system is described in which modularity is enhanced through automatic shutoff valves for gas lines, enabling components to be exchanged readily. Gas lines are routed through a connector at a predetermined location for all modules. The connector comprises a valve member for each line.

Abstract: In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on a circumference of a circle and reaction gas supply pipes having substantially equal supply resistance radially extend to the reactors from a gas reservoir located at the center of the circle.

Abstract: A continuous system for depositing at least one layer of amorphous semiconductor material upon a substrate. Feed and takeup sections provide reel-to-reel advancement of a thin film substrate through the system. At least one chamber is located between the feed and takeup sections. A plasma is generated therein by glow discharge decomposition of an appropriate mixture of reaction gases. Apparatus associated with the chamber allows the close regulation of the plasma/substrate surface equilibrium to assure the deposition of a uniform layer of amorphous material. At least one servocontrolled reel drive regulates the tension of the web-like substrate as it advances to avoid cracking and to assure its proper registration with a mask comprising a plurality of strips. A curtain of inert gas provides isolation between the interior of each chamber and the environment.

Abstract: Photochemical technique is applied, in a unique manner, to the so-called dry process intended for etching a substrate or for deposition thereon in the presence of a gas supplied into a chamber containing the substrate. The interior of this chamber is so structured as to produce a higher pressure gas region and a lower pressure gas region. A beam of light rays is caused to impinge onto the former region to activate the particles of gas. The resulting gas containing the activated particles is fed onto the substrate placed in the latter region as carried through at least one passageway provided between the two regions by the flow of gas caused due to the difference in pressure of gas in these two regions. Thus, the aimed etching or deposition is carried out without damaging the surface of the substrate which would occur by the collision of the otherwise heavily energized particles against the surface of the substrate.

Abstract: In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on the circumference of a circle and exhaust pipes having substantially equal exhaust resistance radially extend to the reactors from a common exhaust pipe located at the center of the circle.

Abstract: A printed circuit board conveyor apparatus has a conveyor for moving a planar circuit board components mounted on frames, in a vertical plane, seriatim, along a first path through a spray treatment area. The components are then raised and returned toward a starting point along a second path with additional processing occurring during the return trip. The use of an overhead return along with positive positioning of the components provides substantial efficiency and allows precision and accuracy in treatment of printed circuit board components while minimizing floor space requirements.

Abstract: A method for introducing sweep gas through a baffle system adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate. The deposition apparatus includes at least a pair of adjacent dedicated deposition chambers into each of which different process gases are introduced, the chambers being operatively connected by a gas gate. Inert gases are swept through the gas gate to minimize back diffusion of process gases from the chambers. The baffle system is adapted to prevent said sweep gases from entering into turbulent flow when traveling through the gas gate passageway. Further, a sufficient volume per unit time of sweep gas is introduced to insure that some sweep gas flows into the cathode region of the first chamber, thereby substantially preventing process gases and plasma from escaping from the cathode region and forming silane powder.

Abstract: In a method for coating a surface with a layer the surface is first subjected to vacuum in a vacuum zone (V) sealed against the surface, whereupon liquid for forming the layer is supplied to the surface in a sealed pressure zone (P) following the vacuum zone. The supplied liquid is then spread out in a controlled manner, preferably by the sealing (13) terminating the pressure zone. FIG. 1.

Abstract: A magnetic lifting device for lifting a stack of specimen holders out of one tube and lowering them into another tube is disclosed. The device avoids the necessity of manual handling of the stack. In the device there are a number of stack holding tubes, each one open at the top, positioned in a circle about a vertical axis of a rotatable carousel. An indexing system rotates the carousel to selectively place one of the stack holding tubes in a treatment position. The improvement comprises a magnetizable member attached to the top of the stack of sample holders, a transfer tube having a bottom opening positioned to mate on top of the stack holding tube to hold the magnetizable member in a magnetic field, a device to raise and lower the magnetic coil about the transfer tube to raise and lower the magnetic coil about the transfer tube to raise the stack into the transfer tube allowing the carousel to be rotated, and lower the stack into another stack holding tube.

Abstract: A method of cleaning an apparatus for forming deposited film on a substrate to remove the substances attached to the inside walls of a reaction chamber in the course of the formation of deposited film on the substrate by etching with plasma reaction comprises using a gas mixture of carbon tetrafluoride and oxygen as etchant.

Abstract: A dry etching apparatus is disclosed which uses reactive gases and which is capable of achieving anisotropic etching without causing radiation damage to a workpiece to be selectively etched. The workpiece is placed in a vacuum container into which two feedstock gases are introduced. One of the gases contributes to the etching, while the other forms a film on the side wall of the etched portion of the workpiece, the film protecting it against lateral etching. A first beam which dissociates the first feedstock gas is perpendicularly directed toward the workpiece, whereas a second gas which dissociates the second feedstock gas is directed in the general direction of the workpiece.

Abstract: A treatment device utilizing plasma performs treatment by exposing a material to be treated to a plasma atmosphere formed by converting at least either one of fluorine and a fluorine compound into gas plasma, and said device comprises a structural member for forming the space for maintaining said plasma atmosphere, which is constituted of a stainless steel structure member coated on its surface exposed to said plasma atmosphere with a metal film which can difficultly form a fluoride.

Abstract: In a film-fabricating apparatus, a reaction chamber and a film-forming chamber which contains a substrate on which a film is deposited are provided. Two chambers are communicated with each other by a communication device which allows for the conduction of activated molecular species grown in the reaction chamber to the film-forming chamber, and prevents light beams emitted during the decomposition of raw gas from being carried into the film-forming chamber. A first cylinder is connected to the reaction chamber, to supply a raw gas to the reaction chamber. An exhausting pump is connected to the film-forming chamber, to decompress the interior of the film-forming chamber. A pair of electrodes, one of which is connected to a power source and the other is grounded, are provided in the reaction chamber, to decompose the raw gas and product activated molecular species.

Abstract: Automatic loading mechanism for automatically transferring semiconductor wafers from storage cassettes onto disk shaped electrodes carried on a hexagonal electrode structure within a plasma reaction chamber. The system includes a reactor chamber, a transport mechanism for transporting semiconductor wafers from storage cassettes and to storage cassettes and a loading mechanism for transferring semiconductor wafers from said transport mechanism onto the electrode structure within the reactor chamber and for transferring processed wafers from said reactor chamber back to said transport means for transport to an output cassette.

Abstract: An improved method and apparatus for the controlled deposition of a layer of hydrogenated amorphous silicon on a substrate. Means is provided for the illumination of the coated surface of the substrate and measurement of the resulting photovoltage at the outermost layer of the coating. Means is further provided for admixing amounts of p type and n type dopants to the reactant gas in response to the measured photovoltage to achieve a desired level and type of doping of the deposited layer.

Abstract: In a photochemical vapor deposition apparatus comprising a reaction space, which forms a passage for a photoreactive gas and in which a substrate is to be placed, and a discharge space, in which electric plasma discharge is generated for radiating ultraviolet rays which cause photochemical reaction of the photoreactive gas, both the spaces being surrounded by the same vessel, discharging electrodes arranged opposite one another with said discharge space therebetween, and a grid comprising a wire-netting of metal interposed between the discharge space and the reaction space, to which grid is applied a voltage of positive potential.This photochemical vapor deposition apparatus can achieve photochemical vapor deposition with high efficiency, because the diffusion of plasma into the reaction space is interrupted by the grid so that the substrate is permitted to be placed at a position closer to an ultraviolet ray source and ultraviolet rays of larger intensity are applied to the substrate.

Abstract: In a photochemical vapor deposition apparatus, a reaction space in which a substrate is to be placed and a discharge space adjacent to the reaction space, in which electric plasma discharge is generated for radiating ultraviolet rays which cause photochemical decomposition reaction of a photoreactive gas, are surrounded by the same vessel, and discharging electrodes are provided in the discharge space so as to be opposite to each other in a first level and a second level, which are different in level in the direction in which the spaces align. The discharging electrode arranged in the first level, which is closer to the reaction space, has such a configuration or arrangement that an ultraviolet ray-passing opening is formed.According to the apparatus, a vapor-deposited film can be formed with high efficiency, because a large quantity of ultraviolet rays can be applied to the substrate without any damage of the vapor-deposited film.

Abstract: This ion beam system provides an ion beam pattern which is produced without the need for a mask. A programmable grid is used in combination with an ion beam source, where the apertures of the programmable grid can have electrical potentials associated therewith which either extract ions or impede the movement of ions through the apertures. Depending upon the electrical biasing provided to each of the apertures of the grid, different patterns of ions can be extracted through the grid. By changing the electrical bias at different locations on the programmable grid, these different patterns are produced. The patterns can be used for many applications, including patterned deposition, patterned etching, and patterned treatment of surfaces.

Abstract: A thin amorphous film-forming apparatus comprising a plurality of discharge unit chambers connected in a loop, each provided with a glow discharge generating means and a space for storing a substrate, gas supply and discharge valves are provided between the unit chambers, and means for periodically changing the opening and closing of the valves.

Abstract: A gas is introduced into a surface treatment chamber and is activated therein. The surface of a specimen placed in the surface treatment chamber is treated by using reactive species generated by this activation. A means of supplying controllable energy such as the energy of heat, light, or electron beams is provided in a stage preceding the surface treatment chamber so as to activate the gas beforehand. The pre-activated gas is introduced into the surface treatment chamber and is activated again therein.