Abstract: In a capacitance coupled type plasma CVD apparatus for depositing a thin film of reaction product of gas on a substrate by glow discharge at an elevated film-forming rate without lowering the function and ability of the formed film and to ensure the CVD operation to be carried out continuously or repetitively for an extended period of time, the electrode facing the substrate is provided as a net of a metal. The substrate is a cylindrical electrode, and the net-like electrode may be formed as a cylindrical net surrounding this cylindrical substrate, or as a pair of opposing flat sheets of net movably sandwiching rotating and movable plural cylindrical substrates therebetween.

Abstract: An apparatus for forming a deposited film comprises a chamber, which can be brought into a reduced pressure, for forming a deposited film on a substrate by introducing a starting gas into said chamber and decomposing or polymerizing said gas, the apparatus is provided with both a means for decomposing or polymerizing said gas by discharging and a means for decomposing or polymerizing said gas by heat.

Abstract: A method and apparatus for vacuum arc deposition of material on a surface of an object uses a vacuum chamber accommodating the active surface of the cathode and an anode. A power supply connected to the anode and cathode establishes an electric arc. The track of the arc is controlled with a magnetic field established with a permanent magnet that is moved in a closed path relative to the cathode. A solenoid modifies the main magnetic field produced on the active surface of the cathode.

Abstract: A plasma CVD reactor and associated process use magnetic field enhancement to provide high quality, very high deposition rate metal, dielectric and conformal semiconductor films. The reacter and process are designed for automated, high-throughout, in-line small dimension VLSI integrated circuit fabrication, and are applicable to multistep in-situ processing.

Abstract: Apparatus for producing open ended plastic containers having decreased gas permeability that includes a vacuum chamber and a pump for regulating the pressure therein, an ionization source mounted in the chamber proximate the container's open end and a container holder located in the chamber. The container holder has a hole aligned with the open end and may include a shield that encompasses the exterior of the container and may include a magnet setting up a magnetic field on the exterior of the shield. In the method, a container is placed on the container holder in the chamber with the open end and hole aligned and with the shield and magnet located as described above. The coating material is vaporized and ionized so that the ionized material is deposited on the interior wall of the container.

Abstract: The present invention relates to a method of heat-treating a semiconductor wafer by utilizing an electromagnetic wave. The wafer is floated by the blast of a gas and is held in a non-contacting state, and the electromagnetic wave, such as microwave, is projected on the wafer in this state so as to heat it. According to the present invention, only the wafer is heated and, hence, the wafer can be heat-treated uniformly and efficiently with great precision.

Abstract: An apparatus and a process for mass production of films by vacuum deposition comprise a substrate charging stage which is evacuated, an interconnecting stage which is positioned adjacent to said substrate charging stage and is evacuated, and a film forming stage which is removably attached to the interconnecting stage and is evacuated independently of the interconnecting stage.

Abstract: In a surface processing apparatus, the LTE (Local Thermal Equilibrium) plasma is produced, instead of the glow discharge, in the discharge chamber. Then the LTE plasma is conducted into the reaction chamber. The surface of the substrate positioned in the reaction chamber is exposed to at least one of the radiation and the active species generated from the LTE plasma for performing the surface processing.

Abstract: A photoprocessing apparatus for processing substrates includes a chamber for holding the substrates and a light source for providing an electromagnetic beam along an axis. A substantially conical reflector is positioned along the axis of the electromagnetic beam to reflect the electromagnetic beam as a plane of light into the chamber. The substrates are arranged in the chamber with respect to the plane of light reflected by the substantially conical reflector, by being either substantially parallel to or substantially normal to the plane of light. If the substrates are substantially parallel to the plane of light and the chamber is filled with a reaction gas, photo-deposition will occur when the plane of light irradiates the reaction gas adjacent to a substrate, so that a film is deposited on the substrate. Other photoprocessing techniques such as photo-etching can be performed when the substrates are arranged normal to the plane of light.

Abstract: A split recoating mold for use in recoating optical waveguide fibers with a UV-curable resin is provided wherein: (1) the mold, when closed, forms a cavity for receiving the portion of the fiber which is to be recoated, the cross-sectional size and shape of the cavity being essentially equal to the cross-sectional size and shape of the original fiber; (2) the mold includes an injection port for introducing a UV-curable resin into the cavity; and (3) the mold includes means for introducing ultraviolet light into the cavity so that resin located in regions of the cavity remote from the injection port will cure prior to resin located in regions of the cavity near the injection port.

Abstract: An apparatus for the in-situ cleaning of Low Pressure Chemical Vapor Deposition tube chambers (32) or Reduced Pressure Epitaxy bell jar chambers (42) having a base member (22) to create a vacuum seal upon engagement with the loading end of the chamber, at least one powered electrode (62) which protrudes from the base member into the chamber, at least on grounded electrode (60) which also protrudes from the base member into the chamber, a means for introducing gas (92) into the chamber, and an electrical network (16) that creates a radio frequency electrical field between the powered electrode and the grounded electrode. A plasma is created in the chamber by the interaction of the gas and the RF field, and the plasma etches unwanted deposits from the inner wall of the chamber. Several different configurations of electrode structures are shown.

Abstract: A method and apparatus for making an abrasion-resistant magnetic recording product comprising forming a magnetic film on the surface of a substrate in a vacuum container, and thereafter, vapor depositing a lubricant on the surface of the magnetic film in the same vacuum container. If necessary, the surface of the magnetic film can be oxidized in the same vacuum container, prior to vapor depositing the lubricant.

Abstract: An apparatus is provided for selectively depositing metal films on metal and semiconductive surfaces of a substrate wherein the depositing surface of the substrate is isolated from undesired impinging radiation, such as infrared radiation.

Abstract: A photochemical vapor deposition apparatus includes a reactor housing having a window in one wall above a reaction chamber in the housing. A transparent curtain divides the reaction chamber into a reaction zone and a flush zone. At least one substrate is mounted in the reaction zone in light communication with the window so that ultraviolet radiation may penetrate through the window into the reaction zone. The window is kept clear by a gas flowing through the flush zone.

Abstract: An integrating light pipe, very preferably a kaleidoscope, encloses a source of radiant thermal energy, the light pipe and energy source being so arranged as to achieve efficient and substantially uniform heating of a workpiece in a target plane. The pipe has closed ends so as to heat the workpiece from both sides uniformly and efficiently. The apparatus employs CW lamps, pulsed lamps, and a combination of the two.

Abstract: A novel method and system for depositing films of selected metallic or semiconductor materials, and particularly of the group III, IV, and V elements, is described which comprises heating a halide compound of the material to produce vapor within a substantially closed chamber, irradiating the vapor with light of preselected wavelength to dissociatively photoionize the vapor into the constituent positive ions of the material and negative halogen ions, and subjecting the photoionized vapor to an electric field to selectively remove the positive ions of the material for plating as a film.

Abstract: There is disclosed a plasma CVD apparatus for depositing a film on a substrate by creating a discharge between the substrate and an electrode arranged to face the substrate, wherein the electrode is constructed by a plurality of hexagonal pillar electrodes arranged in a honeycomb structure.

Abstract: A gaseous phase method accumulated film manufacturing apparatus has one or more reaction furnace installation device on which a plurality of reaction furnaces for forming an accumulated film on a substrate by the gaseous phase method are movably installed, and one or more substrate conveying unit for conveying the substrate to the reaction furnaces.

Abstract: A method of manufacturing a semiconductor device, in which a semiconductor substrate (1) is subjected to a surface treatment in a reactor vessel (2), through which a current (3) of a reaction gas is passed and is then pumped away by means of a mechanical pump (14) and a cooling trap (15) arranged between this pump (14) and the reactor vessel (2). The current of reaction gas (3) consists of a current (Q.sub.c) of gas condensable in the cooling trap (15) and a current (Q.sub.i) of an inert gas. According to the invention, a separate current (Q.sub.x) of an inert gas is conducted to the mechanical pump (14). This current (Q.sub.x) is practically equally as large as the current of condensable gas (Q.sub.c). Thus, a method is obtained, in which the partial pressure of the inert gas (P.sub.i) and that of the condensable gas (P.sub.c) in the reactor gas can be controlled to the optimum and separately.

Abstract: A method of surface-treating a workpiece is described characterized in aping one or more short-duration electrical pulses to produce, for each pulse, a high amplitude short-duration electrical discharge between the workpiece, serving as an anode, and another material serving as a cathode, while the workpiece and cathode are in a vacuum ambient. The workpiece and cathode are spaced from each other by a gap which is less than the smallest dimension of the cathode in the plane therethrough parallel to the workpiece.

Abstract: A plasma CVD apparatus comprises a first vacuum enclosure with a plasma generating means, an accelerating means for accelerating ions in a plasma toward a substrate and a second vacuum enclosure connected to the first vacuum enclosure, so that the plasma gas flows into the second vacuum enclosure and forms a film of uniform and superior quality at high speed.

Abstract: A metallic hollow cathode electrode structure for use in a RF-RIE sputter/etch system. The electrode defines a critical aspect ratio hollow cathode volume. In accordance with one embodiment of the invention, the electrode structure may consist of two closely spaced metal elements separated by a distance of a few centimeters. The elements are electrically and structurally connected by supports around their outer rim. An RF voltage is applied between the improved hollow cathode electrode structure and an evacuated chamber containing same through a suitable matching network. A plasma gas is supplied to the system from a point outside the electrodes and a suitable pumping system is used to maintain operating pressures in the 0.1 to 400 millitorr range. Samples to be sputtered are then placed on either of the inside electrode surfaces for sputter/etching. The aspect ratio (longest dimension of one of the elements/spacing between the elements) should be at least 4.

Abstract: An apparatus for conducting chemical vapor deposition reduced pressure, comprising: means for feeding reactive gases; a reaction vessel for depositing a film layer from the reactive gases by application of thermal energy, light energy or electric energy singly or in combination; an exhaust means for exhausting unnecessary reactive gases and unnecessary reaction products from the reaction vessel and for vacuumizing or reducing pressure of the reaction vessel, including a turbo molecular pump and a pressure control valve interposed between the reaction vessel and a roughing rotary pump; and a method of chemical vapor deposition using such apparatus.

Abstract: An amorphous silicon film forming apparatus forms an amorphous silicon film on a substrate. The apparatus is provided with a sealed vessel whose inside space is defined as a reaction chamber. A gas inlet pipe for introducing a gas containing SiH4 into the reaction chamber is connected to the vessel. A facing electrode provided in the reaction chamber and a power source connected to the facing electrode convert in a plasma generating region the gas introduced into the reaction chamber by the gas inlet pipe into plasma. A conductive mesh structure is disposed in the reaction chamber so as to surround the plasma generating region.

Abstract: In the particular embodiments described in the specification, a plasma CVD apparatus has a plurality of pairs of electrodes and equal discharges are attained by controlling the power supplied to the high frequency electrodes independently of one another so as to effect the formation of uniform films. Electromagnetic mutual interference between the electrodes is reduced by allowing the high frequency power supplies for supplying the power to function independently and providing a phase regulator if necessary.

Abstract: A spinner mainly used for spinning treatment of a semiconductor wafer, having a means for generating supersonic power to be transmitted to a supersonic vibration transducer embedded inside a spinning disk so that the supersonic vibration is applied to a processing liquid material dispensed on a work piece held on the center portion of the rotating spinning disk. As a result, particles or air bubbles of small size involved in the layer of liquid material are effectively removed from the liquid layer, resulting in improving fabrication yield and reliability of the product.

Abstract: An improvement in a vacuum plasma treating apparatus having a reaction chamber partly formed of electric insulating material subject to corrosion by a fluorine or chlorine containing gas plasma, which improvement being that the electric insulating material subject to corrosion comprises a sintered ceramic material containing alumina as a primary ingredient.

Abstract: A carrier is provided to hold a central apertured disk while magnetic material is plated simultaneously on the annular surfaces on both sides of the disk. The carrier contains a first opening substantially the same diameter as the disk and a second opening formed about a center line offset from the center line of the first opening so as to form a recess around a portion of the edge of the first opening. The disk is inserted into the first opening and recess to block the flow of plasma and impurities from one side of the disk to the other during the disk surface coating. A two-part plug is provided for placement in and sealing the center aperture of the disk. One plug part contains a spring or magnetic means for holding the two parts together within the disk. The plug includes a knob for handling, carrying and mounting or removing the disk from the carrier.

Abstract: Improved conductive elements for direct exposure to reactive ambients. The conductive articles are fabricated from bodies of alpha silicon carbide comprising a minor fraction of homogeneously dispersed conductive particles. The bodies may have a sufficiently low electrical resistivity so that they may be used as heaters for direct contact with workpieces at high temperatures.

Abstract: Apparatus for coating substrates by means of a reaction for depositing atoms or molecules which is initiated by a plasma. A reaction chamber (1) is equipped with at least one window (22, 23), penetrable by microwaves, with at least one wave-guide structure (16, 17), arranged outside the chamber (1) and in front of the window (22, 23), and with a distributing means (25) discharging into the chamber.According to the invention and for the purpose of achieving the object of facilitating inspection and repairs, the window (22, 23) penetrable by microwaves, the one or more wave-guide structures (16, 17) and the distributing means (25) are all secured in or on a support frame (10), which can be removed, or swung away, from the reaction chamber (1) as a single unit.

Abstract: A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks can have a relatively large diameter (on the order of magnitude 50 centimeters). The plasma disks can be created without using a static magnetic field. The radio frequency waves are preferably microwaves or UHF. The method is particularly useful for ion or free radical irradiation of the surface provided in the plasma or for irradiation of the surface by ions accelerated outside a cavity containing the plasma. Disk plasmas are created over a wide pressure range (10.sup.-4 Torr to 1 atmosphere) and are highly ionized at low pressures. An apparatus adapted for treating a surface of an article with ions from a plasma is also described. The method and apparatus are preferably used for treating a surface forming part of an integrated circuit.

Abstract: A photochemical vapor deposition apparatus which includes a reaction chamber, a means for introducing a starting gas for film formation into the reaction chamber and a means for irradiating the starting gas with a light of high energy and deposites a thin film on a substrate placed in the reaction chamber by utilizing the photochemical reaction, characterized in that the apparatus includes a means for heating in advance to high temperature the starting gas to be introduced into the reaction chamber.

Abstract: Apparatus for and a method of confining the ionized plasma developed during the glow discharge deposition of thin film semiconductor alloy material to preselected portions of the plasma region so as to prevent etching and deposit only uniform, nonhomogeneous semiconductor alloy material.

Abstract: A plasma CVD apparatus for forming a deposited film on a base body by introducing a gas of a compound into a chamber and converting the gas into plasma by applying a high frequency electric power, includes a gas feeding pipe leading from the exterior of the chamber into the interior of the chamber, and a heating device. The heating device heats at least a part of the gas feeding pipe inside the chamber, thereby preventing the gas from condensing or solidifying. With this apparatus, plasma CVD can stably be carried out using gases of various compounds which are liquid or solid at room temperature.

Abstract: A process for the modification of substrate surfaces is described, wherein etching or deposition at a surface occurs only in the presence of both reactive species and a directed beam of coherent light.

Abstract: In a dry-processing apparatus adapted for vapor phase deposition or vapor phase etching, the processing space in its processing chamber is covered with a cooled member provided for trapping reflecting active particles and preventing degassing, thereby permitting processing with gas of high purity substantially free from impurities. The active particles are incident upon a workpiece in a unidirectional flow. Means for uniformalyzing the direction of movement of active particles may be further provided. The apparatus is especially useful for vertical etching of a semiconductor substrate with neutral radicals.

Abstract: A magnetron plasma reactor wherein the susceptor is an aluminum arm extending into approximately the middle of a solenoidal magnetic field generated by a dc current.

Abstract: A process and an apparatus for forming films, up to several microns in thickness, on substrates by the combination of ion implantation and vapor deposition; said apparatus comprising a vacuum chamber, means for transporting a substrate within the vacuum chamber, a first ion source having an accelerating voltage of 500 V to 5 kV and disposed at a first position along the direction of movement of the substrate within the vacuum chamber, a first evaporator disposed at a second position along the direction of movement of the substrate within the vacuum chamber, and a second ion source having an accelerating voltage of 10 kV to 100 kV and disposed at a third position along the direction of movement of the substrate within the vacuum chamber, and optionally further comprising a second evaporator disposed at a fourth position along the direction of movement of the substrate within the vacuum chamber, which may be provided with high-frequency exciting means disposed in a path of release of vapor from the second evapo

Abstract: An improved radio frequency (RF) glow discharge apparatus is disclosed for depositing dielectric films onto substrates in a continuous operation. The apparatus includes one or more capacitively coupled electrodes, with a plate of a dielectric material that overlies the surface of the electrode(s) coupled with the plasma. The thickness of the plate is sufficient such that during deposition with the apparatus of this invention, the amount of material deposited on the electrodes is negligible, and the potential between the electrodes and the substrate remains substantially the same. This, in turn, insures that the chemical structure and properties of the deposited films are reproducible over long periods of operation.

Abstract: An apparatus for photochemical vapor deposition includes an outer reactor shell and a concentric inner shell which define a photochemical reaction zone. A radiation source is centrally located within the transparent inner shell, which isolates the radiation source from the vapor phase reactants present in the reaction zone. A rotating gas manifold is located within the reaction zone to uniformly distribute the vapor phase reactants within the reaction zone. Protective liquid is continually applied to the outer surface of the inner shell and spread into a thin film by wiper blades, to prevent deposition of reaction products onto the outer wall of the inner shell. The central location of the radiation source, along with the protective liquid film, make optimum usage of the reaction-inducing radiation generated by the radiation source. In addition, the rotating gas manifold promotes uniform deposition of layers of selected materials on substrates placed within the reaction zone.

Abstract: A plasma CVD (chemical vapor deposition) apparatus of the capacitance coupling type for effecting the chemical vapor deposition on a drum which includes an air tight chamber made of an electrically conductive material, a support provided in the chamber for supporting the drum inside the chamber in an electrically insulated relationship with the chamber, and an RF power source for supplying RF power to the drum. The chamber is grounded and, therefore, the plasma is generated between the drum and inside wall of the chamber. The apparatus is provided with means for providing a smooth surface on the drum. The drum can be used as a photoreceptor for use in an electrophotographic copying machine.

Abstract: Substrates are disposed in a reaction chamber having a gas inlet and a gas outlet and a mixture gas containing at least a semiconductor material gas and a carrier gas is introduced into the reaction chamber in such a state in which a gas in the reaction chamber is exhausted therefrom. An electromagnetic field is applied to the mixture gas to ionize it into a mixture gas plasma in the reaction chamber, by which a semiconductor material is deposited on each substrate. In this case, the semiconductor material thus deposited on each substrate becomes a non-crystalline semiconductor by holding the atmospheric pressure in the reaction chamber below 1 atm and maintaining the substrate at a temperature lower than a temperature at which the semiconductor material on the substrate becomes crystallized.The reaction chamber is provided with a gas ionizing region on the side of the gas inlet and a semiconductor depositing region on the side of the gas outlet.

Abstract: A disk boat assembly for holding workpieces to be processed within a chemical reaction processing apparatus during the chemical vapor process. The boat assembly includes a pair of electrically conductive rail members held rigidly and radially apart between two dielectric end holding members that electrically isolate the two rail members. A plurality of disk like plates are connected respectively to the two rail members and are interleaved such that adjacent disk plates are electrically isolated. Each disk plate includes pairs of bores formed therein with each pair extending radially outward from the center of the disk. Insertable pins are placed in a respective pair of bores, the distance therebetween of which can be extended by insertion in an additional pair of bores lying further from the center of the disk so that variable diameter workpieces can be held on the broad surfaces of each disk plate.

Abstract: Method and apparatus for coating catalytic converter substrates with an exact amount of a precious metal. In the course of operation of the apparatus, a hollow substrate to be treated having opposed open ends is transferred from a starting location such that one end is lowered into a dip pan into which has been introduced a predetermined amount of slurry material containing the precious metal. With the one end immersed in the slurry, a vacuum placed on the other end of the substrate draws up the entire charge of slurry from the dip pan to coat the lower portion of the substrate. Thereafter, the substrate is raised from the dip pan. The vacuum continues to operate to cause the coating to be evenly distributed on all the interior surfaces of the substrate. Then the substrate is rotated and again lowered so that the other end is immersed in another predetermined charge of the slurry and the process is repeated. Thereupon, the substrate is again raised from the dip pan.

Abstract: A photo-mask is mounted on a repairing chamber, with its mask pattern forming surface being exposed to the interior of the chamber. Vaporized repairing material which includes a metallic element is introduced into the chamber, and a laser beam is projected from the exterior of the chamber onto a transparent defect of the mask pattern. The irradiated portion is heated and the vaporized repairing material at the heated portion is resolved, resulting in the metal resolved from the repairing material deposits and fills the transparent defect. Thus, transparent defects of a mask pattern can be repaired in a simplified process.

Abstract: An improved cathode assembly specifically designed to provide for the uniform, localized profiling of dopant or other alterant elements into the host matrix of a semiconductor alloy material which is continuously and uniformly deposited onto a moving substrate by a glow discharge deposition process.

Abstract: An exhaust system comprising an exhaust device and a collecting device incorporating a filter and positioned in front of the exhaust device, the exhaust system being adapted for use in a chemical vapor deposition apparatus, wherein at least a part of the collecting device is heated.

Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.

Abstract: A vertical processor for the continuous deposition of semiconductor alloy material by glow discharge techniques. The vertical processor includes a plurality of operatively interconnected deposition chambers, at least one chamber of which includes a generally vertical cathode plate about each of the opposed faces of which a plasma region is developed and a substrate continuously passes for the deposition of semiconductor alloy material thereonto. Through the utilization of the vertical deposition scenario, the length of the processor may be substantially foreshortened, power consumption may be substantially decreased and feedstock gases may be more efficiently utilized.

Abstract: In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on a circumference of a circle and coaxial cables having substantially equal impedance radially extend to the reactors from a matching circuit located at the center of the circle.