Abstract: An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE.sub.11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE.sub.11 mode one complete turn in one period of the microwave.

Abstract: An apparatus for forming a thin film having a vacuum container evacuated to high vacuum and receiving a gas for vapor deposition, a source of evaporation for evaporating a substance, a counter electrode holding a substrate to be vapor-deposited, a grid disposed between the source and the electrode for accelerating the evaporated substance, and an electronic gun for emitting thermions, which are hit on the evaporated substances to ionize them.

Abstract: A holding fixture for plasma enhanced chemical vapor deposition processing of semiconductor wafers comprising a frame boat assembly for holding disk-shape semiconductor wafer workpieces to be subjected to a flow of reactant gases serially across the workpieces in a direction perpendicular to the broad faces of the workpieces. The boat holding fixture comprises a pair of upright, spaced-apart insulating frame end members having a first set of spaced-apart parallel, elongated insulating rods secured between the end members for holding the boat in assembled relation. An electrode supporting rack is secured within the boat for holding a plurality of flat, spaced-apart, electrically conductive electrodes in an upright position with the flat surfaces parallel to each other and perpendicular to the longitudinal axis of the boat.

Abstract: A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either along or in conjunction with a subsequent isotropic etch.

Abstract: An electric arc vapor deposition apparatus for coating the internal surface of a metal gas-pressure tank has a sealing plug, a means on the plug coupled with a vacuum pump for evacuating the tank, a material-supplying electrode mounted on the plug and an electrical source connectable between the tank and the electrode to supply electric arc energy.

Abstract: An apparatus for forming a thin film on a substrate has a first reaction chamber in which a thin film is formed by gaseous discharge and a second reaction chamber in which reactive atoms are generated. The first and second reaction chambers commuicate with one another through an orifice in the first reaction chamber. The first reaction chamber houses a device for generating a film on a substrate, and the second reaction chamber houses a device for generating reactive atoms. The orifice is disposed in the vicinity of both a film-forming region in the first reaction chamber and a reactive atom-generating region in the second reaction chamber so that reactive atoms from the second reaction chamber will pass through the orifice and enter the film-forming region in the first reaction chamber, combine with particles in the film-forming region to form a chemical compound, and accumulate on the substrate.

Abstract: The invention concerns apparatus for coating or etching by means of a plasma. Herein a first electrode (5) is connected to a high frequency voltage which produces plasma from a gas. A second electrode (6), on which the substrate (7) to be coated or etched is disposed, is connected to a medium frequency voltage which accelerates the ions of the plasma to the substrate (7). According to the invention, this medium frequency voltage consists of unipolar pulses that have the same amplitude for a predeterminable time interval. The number of ions impinging on the substrate (7) is thereby decoupled from the amplitude of the applied medium frequency voltage. It is determined solely by the frequency or width of these pulses.

Abstract: An apparatus and method for measuring the concentration profile of an active species across the surface of a semiconductor slice in a plasma reactor is disclosed that permits uniformity of etch and deposition across the surface of the semiconductor slice.

Abstract: An apparatus and method for applying hard surface coatings to articles of manufacture such as particles, filaments, sphereoids, rollers, bearings, tools, and assemblies. In one form, coating of hard surface film, such as synthetic diamond, is effected while the objects fall freely through space in a coating chamber. In another form, coating is effected while particles are fluidized by gas containing molecules which are formed of matter to be deposited by gas or chemical vapor deposition employing high energy radiation, such as microwave energy and/or other form of radiation. In other forms, an ion beam or beams containing hot carbon ions is directed through a fluidized bed of particles to be coated or through a chamber in which small objects are made to continuously fall freely through space to coat same with carbon in the form of synthetic diamond.

Abstract: A photo CVD apparatus includes a reaction chamber, a vacuum pump, and a light source chamber disposed in the reaction chamber, the light source chamber having a light window. A light source is provided in the light source chamber for irradiating the inside of the reaction chamber through the window. A device inputs reactive gas into the reaction chamber, and an electrode is disposed in the reaction space adjacent to the window and located between the substrate and the window. A method of depositing a layer on a substrate includes the steps of disposing a substrate in a reaction chamber, introducing a reactive gas, and initiating a photo-chemical reaction to deposit the product of the reaction on the substrate by irradiating the reactive gas with light emitted from a light source through a window of a light source chamber in which the light source is disposed. The substrate is then removed from the reaction chamber, and an etchant gas is introduced into the reaction chamber.

Abstract: An improved Photo CVD apparatus having no window for ultraviolet light is shown. In the reaction chamber of the apparatus, an ultraviolet light source is placed directly in the chamber filled with the process gas so that no loss of light is there and high deposition speed is obtained. This structure is realized by providing extra rooms in the reaction chamber to protect the terminals of the electrodes.

Abstract: A cluster source includes at least two separate zones, each of whose temperatures can be independently controlled. A crucible contains the species to be evaporated, and is heated to a sufficiently high temperature that efficient evaporation is achieved. A cluster formation surface is adjacent to the crucible and receives evaporated atoms from the crucible. Clusters are produced at the cluster formation surface from the evaporated atoms, and the cluster formation surface is maintained at a temperature lower than that of the crucible to encourage good formation efficiency. Optionally, a third zone can be provided for ejection of the clusters, which is maintained at a higher temperature than the cluster formation surface to prevent formation of droplets of the evaporant.

Abstract: System and method for detecting problems and other conditions in a semiconducting processing reactor. The relative amounts of two or more substances are monitored, and an output signal is provided when the relative amounts change in a manner corresponding to the change or condition to be detected. In one disclosed embodiment, the substances are ionized to produce excited molecules of the substances, and the substances are sensed with photosensors which are responsive to light of wavelengths characteristic of the substances.

Abstract: A processing system wherein the process gas flow passages have a modified contour which reduces particle entrainment. This modified cross section increases the thickness of its stagnant boundary layer near most of a wall area of the piping, so that any particle which is deposited on the walls of the gas piping is much more likely to stay there permanently, and not be removed by subsequent local velocity maxima in turbulent flow.

Abstract: An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.

Abstract: An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such as to surround the first susceptor at a predetermined space therefrom and having an inner periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers such that these semiconductor wafers face the semiconductor wafers supported by the first susceptor, and a pair of heat reflection members disposed in the reaction furnace between the outer periphery of the first susceptor and the inner periphery of the second susceptor. The first and second susceptors are rotated in mutually opposite directions about a common vertical axis during an epitaxial growing process.

Abstract: An apparatus for generating a plasma in the lumen of a small diameter tube includes a housing having a diaphragm which separates the housing into a first chamber equipped with a gas inbleed assembly and a second chamber connected to a vacuum source. Parallel plate electrodes in the first chamber are encased in a dielectric which prevents substantially all plasma discharge external of a plasma zone between the electrodes. A conduit maintains gas flow between the chambers. A bore through the dielectric includes the plasma zone and receives the tube to be plasma treated.A method for treating the luminal wall of a plastic tube includes positioning a tube in the plasma zone, evacuating the chambers, bleeding a gas into the chambers, and delivering radiofrequency power to the electrodes. A long tube may be drawn through the plasma zone, or the dielectric and electrodes may be moved past the tube.

Abstract: An induction galvanneal strip furnace utilizes a plurality of radiation (infrared or optical) pyrometers which measure strip temperature and provide a feedback signal which is compared with a set point or reference temperature signal from a set point generator to produce an error signal proportional to the measured variable minus the set point or reference temperature. The error signal is processed by use of a conventional proportions integrator derivative algorithm to produce a control signal which controls the electrical energy supplied to the induction coils. Each of the radiation pyrometers is positioned at the emergence or downstream side of the downstream most induction coil of a set of induction coils that it controls to thereby provide rapid, accurate control of strip temperature and with a more efficient utilization of electrical energy and high quality in the finished product.

Abstract: Apparatus for use in treating semiconductor wafers or other work pieces by an active ion technique or by chemical vapour deposition, comprising a "vacuum" chamber having means for connection to an evacuating pump and to a source of the selected gas, an induction coil surrounding part of the chamber and connected to an alternating current supply to create a plasma within the chamber containing ionised elements of the gas, a support for the work piece within the chamber, and means for creating an electric field between the support and part of the chamber where the plasma exists.

Abstract: A hand held device for coating a fastener with a coating and which includes a first body with a free end and which defines a first chamber that is placeable over the fastener, apparatus for supplying the coating under a pressure to the first chamber for coating the fastener with the coating, a second body with a free end and which is disposed external to the first body so as to form a second chamber therebetween, the second body is rigidly attached to the first body and the free end of the second body is displaced a distance below the free end of the first body so as to form a passageway therebetween, and apparatus for reducing pressure in the second chamber, the reducing apparatus draws the coating from the first chamber where the fastener is initially coated with the coating from the supply apparatus through the passageway and into the second chamber which causes the second chamber to fill with the coating so that when the pressure of the supply apparatus is eliminated the coating is drawn back from the sec

Abstract: An improved apparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition process is characterized in that an opening and shutting member to form an opening for taking a substrate in or out a deposition chamber and the circumferential wall of the deposition chamber are sealed by an electromagnetic wave shielding means and a vacuum sealing means being arranged in this order from the side of the microwave plasma generating space, which prevent deterioration of the vacuum sealing means and makes it possible to repeatedly form a desired functional deposited film of high quality at a high deposition rate.

Abstract: A dry etching apparatus which includes an anode located at an upper side and a cathode located at a lower side which face each other in a vacuum vessel. A high-frequency power can be applied across the anode and the cathode. A flange section extends from the inner wall of the vacuum vessel, and is located between the anode and the cathode. A semiconductor wafer can be placed on the cathode through a tray. The cathode is moved toward the anode together with the tray and the wafer. When the edge portion of the tray abuts against the flange section, the interior of the vacuum vessel is partitioned into an etching chamber and the other chamber. A magnetic field is applied to the etching chamber from outside the vacuum vessel, and an etching gas is also introduced into the etching chamber. When the etching gas is introduced, the interior of the etching chamber is evacuated to be maintained at a predetermined pressure.

Abstract: Apparatus for spray coating plate-like or otherwise configurated workpieces has an endless apertured conveyor which transports a series of workpieces along a horizontal path beneath a rotary atomizer which sprays coating material onto the advancing workpieces. The coating material which bypasses the workpices and passes through the apertures of the conveyor impinges upon and gathers on a web of paper or non-woven fibrous material which is advanced at a speed less than the speed of the conveyor so that the web can be used with great economy because it is or can be advanced at a rate such that, or only when, its portion which is in the path of sprayed coating material cannot gather and retain additional coating material.

Abstract: A photo-CVD (chemical vapor deposition) apparatus is disclosed, in which at least two light transmission plates are used and the light from a light source is introduced into a gas reaction chamber through one of light transmission plates inserted into the chamber to cause the reactions in a reaction gas to thereby deposit a thin film or layer on a substrate located in the gas reaction chamber. In this case, a light transmission plate polluted by the reaction gas is moved to the outside of the chamber, then washed or exchanged with a new one manually or automaticaly while a clean one is inserted into the chamber, so that the photo-CVD process can be carried out continuously without interrupting the irradiation of the light from the light source.

Abstract: A method for maskless patterning and etching of metals is disclosed. The method comprises the steps of providing a metal, forming a passivating layer of an oxide or nitride upon the surface of the metal, exposing the metal to a halogenous atmosphere, while patterning the metal using a directed energy beam to selectively replace the oxides or nitrides with halides, and heating the patterned metal while exposing it to an etchant to etch regions located below the halogenated surfaces leaving the remaining passivated regons intact.

Abstract: A plasma processing apparatus which is effective for surface processing uses a reactive gas activated by plasma excited by microwave energy. Generation and maintaining of the plasma excited by the microwave energy are different where pressure in the gas chamber is above 0.1 Torr. Generating a high density plasma and maintaining the plasma includes the use of a protrudent window which extends into the activating chamber which also operates as a cavity resonator. Oxidation of resist formed on the surface of VLSI may be provided and damage by charge particles prevented by use of a magnetic field.

Abstract: A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpieces which may be loaded into the chamber.

Abstract: An apparatus for low-temperature plasma treatment of a sheet material, comprising a plurality of reaction zones through which the sheet material is transported in an enclosed reaction chamber whose inner pressure can be reduced, in which the reaction zones are provided respectively with an electrode communicating to a high frequency generating device and a plurality of jet nozzles for supplying a gas thereto for generating low-temperature plasma gas, and the reaction chamber and the reaction zones are earthed. Another apparatus for the same purpose is to provide a liquid medium passage passing through the guide rolls for transporting a sheet material to be treated and through the electrodes under reduced pressure for heating or cooling the sheet material under treatment to a prescribed temperature.

Abstract: Precision multilayer optical interference coating of substrates having complex topology using complementary shaped electrodes and plasma enhanced chemical vapor deposition within a chamber. The materials for the optical quality thin films are obtained from starting reactants of the form M-R where M denotes a metal atom and R denotes an organic component. These starting reactants are brought into a reactive atmosphere of the chamber through a plurality of orifices in one of the shaped electrodes. The resulting substances are deposited as thin films upon the substrates.

Abstract: A surface treatment method, wherein gas particles are applied to a solid surface of a substrate to treat the same surface, comprising the step of applying to the gas particles the narrow line width laser light capable of exciting or decomposing only such gas particles that have velocities in a predetermined range.

Abstract: An annular ring (38) adapted for use in a plasma reaction chamber. The annular ring (38) includes a central opening aperture for laterally retaining a semiconductor slice (40) within the chamber. Spaced around the ring are a plurality of gas exhaust ports (58) for providing a back pressure within the chamber, for removing gases therefrom. Different rings can be provided with different central opening apertures to accommodate the processing of different sized slices. Alternative arrangements of the ring (38) provide for mask openings (68) to mask selected areas of the slice (40) and prevent plasma reactions thereat.

Abstract: The wafer processing boat of a plasma enhanced chemical vapor processor includes an R.F. connector at the inner end of its interleaved electrodes. The R.F. electrical connector includes slidably mated male and female portions for making R.F. electrical connection to the boat through the end wall of the evacuable furnace tube. A particle shield surrounds the mated male and female R.F. connector portions for confinement of particulates released during the mating of the connector. The shield includes an open end which faces downstream of the flow of processing gases to reduce backstreaming of particulates onto the wafers. The electrical male conductors of the connector are covered by a quartz sheath.

Abstract: An apparatus for producing and coiling films of insulating material coated under a vacuum with electrically conductive material, comprising an electron beam vaporizer, a feed drum, a roller disposed above the electron beam vaporizer and looped by the film, a take-up drum, and deflector rolls for establishing a path for the film, at least one plasma source oriented towards the path of the film so that the plasma touches the film, said plasma source being disposed in the region of the path of the film from the electron beam vaporizer to the take-up drum, wherein the plasma source is disposed at the end of the angle of contact specified by one of the deflector rolls.

Abstract: The inside of a reaction chamber for CVD is cleaned after deposition of a carbon film. When crystalline carbon or diamond-like carbon is formed in the chamber, undesirable deposition occurs on the inside of the reaction chamber. The sticky carbon deposition is removed by etching, making use of oxygen or oxygen compound gas rather than fluorine or chlorine compound gas which tends to damage the inside of the reaction chamber.

Abstract: A photo CVD apparatus for use with a reactive gas is disclosed, which includes a reaction chamber, a second chamber for a light source, separated from the reaction chamber by a transparent window. There is also a conduit connecting these two chambers and a means for preventing deposition by the reactive gas on the light source chamber walls, such as heating, is provided. Examples of this technique's applicabilities are given with such gases as Si.sub.2 H.sub.6 or Al(CH.sub.3).sub.3 and ammonia.

Abstract: A method and apparatus for ultrarapid cooling of tissue samples against a chilled cryogenic surface. The cryogenic surface is enclosed in a high vacuum chamber during cooling of the cryogenic surface. Dry non-condensable room temperature gas is introduced from an external source to raise the chamber pressure just prior to slamming or plunging a sample against the cryogenic surface. The cryogenic surface is heated for regeneration or cleaning purposes between each successive sample.

Abstract: When reactive gases are directed toward a substrate disposed in a vacuum atmosphere, the reactive gases are activated by irradiation with an electron beams. The reactive gases react with vapor or cluster ions of a material to be deposited, thereby forming a thin film of the reaction products. Therefore, a thin film with high quality can be efficiently deposited on a substrate.

Abstract: A conventional microwave over has been modified such that it may be used for plasma etching and cleaning. Oxygen or Argon gas is introduced into a vacuum chamber (18) inside a conventional microwave oven (10) that has been modified to allow gas from a canister outside the microwave oven to pass through the rear wall of the microwave oven into the vacuum chamber (18). A rotating antenna (16) ignites the gas to produce a uniform plasma which etches the substrate (28). Reaction by products are evacuated from the vacuum chamber by a vacuum pump positioned outside the microwave oven (10). The intensity of the microwaves can be adjusted for plasma etching via a maximum power control device which has been added to the electronic control circuit of the microwave oven. In addition, a vacuum chamber with a water cooling feature is provided to prevent thermal damage to the substrate during plasma processing.

Abstract: A collection and draining system for use in a manufacturing process. This system comprises a collection tank coupled with a collector, the collector consisting of a funnel and a stem. The stem of the collector extends sufficiently into the collection tank such that the bottom of the stem is always covered with the solvent being collected during normal operations of the collection system. This is accomplished by locating the drain in the collection tank above the bottom of the stem. This results in reduced build up of solvents along the walls of the collection tank and the collector. In addition, by allowing the drain of the collection tank to drain into a main drain system, removal of the collection tank from a machine it is attached to during operation of the machine is unnecessary. Removal is only necessary during cleaning of the collection tank or the collector.

Abstract: A heat processing apparatus for manufacturing semiconductors is constructed such that an airtightly sealing part is provided at the tubular end having equal diameter to that of a main body of the apparatus, a ring shaped packing is wound on the outer circumference of a cylindrical tube adjacent to the end to be pressed between a pair of ring bodies which are formed with tapered edges of opposite inner sides, an inner tube having an equal diameter to that of the tube is connected with the end of the cylindrical tube through a cushioning material, on the outer circumference of the inner tube an outer tube is constructed integrally with one of the ring bodies, opening ends of both the inner and the outer tubes are adapted to be closed with a lid, and to the outer tube there are provided an exhausting tube for exhausting gas in the cylindrical tube and a gas introducing tube which interrupts an open air from the cylindrical tube with the flow of inert gas which flows when the lid is opened, and exhausting holes w

Abstract: A controlled gas environment is provided against a surface area of a semiconductor wafer for performing processes on the area in the fabrication of integrated circuits thereon, including processes of deposition, impurity implantation, etching, ablation, and other radiation induced chemical processes involving the gas atmosphere by maintaining a continuous gas flow over the area and a portion of the surrounding area of the wafer surface covered by an enclosure that is suspended on the surface on a film of the flowing gas, the pressure, temperature and composition of the gas atmosphere against the surface area being controlled to meet the requirements of each processing step and/or to carry away particles while the gas seal is maintained.

Abstract: An apparatus for forming a thin film in which the reactive gases, which have been activated by the reactive gas activation means, accelerated by the kinetic energy controlling means, and still more activated by the excimer laser beam emitted toward the neighborhood of the substrate from the excimer laser beam emitting means disposed outside of the vacuum chamber, react with the material to be deposited, which has been clustered or turned into the cluster ion by the ICB device and accelerated, to form a thin film of a compound as the material to be deposited on the substrate disposed within the vacuum chamber maintained at a predetermined degree of vacuum.

Abstract: A method and apparatus is described for combined deposition of thin films of materials from an ion beam source and a molecular beam source in a single reactor.

Abstract: An apparatus for the preparation of a photoelectric conversion layer for a photoelectromotive force member includes:(a) a film-forming chamber having an inner space in which a substrate holder for a substrate is provided;(b) an exhaust pipe connected to the film-forming chamber and through a main valve to an exhaust pump;(c) a concentric triplicate conduit connected through a nozzle to the film-forming chamber.

Abstract: Disclosed is a method of heating a semiconductor in a heat treatment apparatus for heating the semiconductor at a high temperature, in which a semiconductor is put in the heat treatment apparatus, and an alternating magnetic field is applied to a low-resistance ferromagnetic substance disposed in the heat treatment apparatus and isolated by a material inert to a required treatment atmosphere in the heat treatment apparatus to generate heat in the low-resistance ferromagnetic substance to thereby carry out heat treatment on the semiconductor. Further disclosed is a susceptor for supporting a semiconductor inertly to a required treatment atmosphere in a heat treatment apparatus, the susceptor being constituted by a material which is inert to the treatment atmosphere in the treatment apparatus and a low-resistance ferromagnetic substance isolated by the inert material from the treatment atmosphere.

Abstract: In a chemical vapor deposition apparatus for coating semiconductor wafers, the wafer is held face down in the reaction chamber. A radiant heat source above the wafer and outside the reaction chamber. The wafer is held on a ring chuck by means of a retractable clamp heats the wafer from its backside to a temperature in excess of 1000.degree. C. rapidly. The radiant heat source includes cylindrical lamps placed in a radial pattern to improve heating uniformity. In the selective tungsten process the temperature of the wafer is raised from ambient to about 600.degree. C. while flowing process gases. At the upper temperature range the heating source can be rapidly cycled on and off to improve the uniformity of coating.

Abstract: This invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises rendering a gas having a critical potential plasmic under a reduced pressure and changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. The plasma treating apparatus comprises means for rendering a gas having a critical potential plasmic under a reduced pressure and means for changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. According to the present invention, the etching step and the film formation step can be carried out alternately and the plasma treating time can be shortened.

Abstract: A barrel type vapor-phase growing apparatus includes a reaction cylinder with a seal plate provided for sealing the upper end of the reaction chamber. A radio-frequency heating coil is provided in the reaction cylinder. A susceptor is also provided in the reaction cylinder so as to surround the radio-frequency heating coil, and a number of semiconductor wafers supported on the surface of the susceptor are heated by the radio-frequency heating coil. A rotating device is provided on the seal plate, and a suspension member is coupled with the rotating device for suspending and rotating the susceptor within the reaction cylinder such that the upper end of the susceptor is held at a position lower than the upper end of the radio-frequency heating coil.

Abstract: A chemical vapor transport reactor gas dispersion disk (20) for counteracting vapor pressure gradients to provide a uniform deposition of material films on a semiconductor slice (37). The disk (20) has a number of apertures (22) arranged so as to increase in aperture area per unit of disk area when extending from the center of the disk (20) to its outer peripheral edge.

Abstract: A process and an apparatus for depositing thin, amorphous carbon films having extreme hardness on a substrate is described. An enclosed chamber maintained at less than atmospheric pressure houses the substrate and plasma producing elements. A first electrode is comprised of a cavity enclosed within an RF coil which excites the plasma. A substrate located on a second electrode is excited by radio frequency power applied to the substrate. A magnetic field confines the plasma produced by the first electrode to the area away from the walls of the chamber and focuses the plasma onto the substrate thereby yielding film deposits having higher purity and having more rapid buildup than other methods of the prior art.