Abstract: An optical fiber which has just been drawn from an optical preform is provided with an external hermetic coating by using a heterogeneous nucleation thermochemical deposition technique. This technique involves passing the fiber through a reaction zone which contains a gaseous medium that includes a reactant which decomposes, or a mixture of reactants which chemically react, at a predetermined temperature to form the material of the coating. Only the fiber but not the gaseous medium surrounding the same is heated to the predetermined temperature, especially by directing radiation onto the exposed circumferential surface of the fiber, so that the decomposition or the chemical reaction takes place directly on the exposed surface of the fiber rather than in the gaseous medium, accompanied by simultaneous deposition of the coating material on the exposed surface of the fiber. The resulting fiber with hermetic coating can then be provided with an additional polymer coating layer.

Abstract: In a photochemical vapor deposition apparatus, a reaction space forming a passage for a photoreactive gas, in which reaction space a substrate is to be placed, and a discharge space, in which electric plasma discharge is generated for radiating ultraviolet rays which cause photochemical reaction of the photoreactive gas, are surrounded by the same vessel. A mercury reservoir that communicates with the discharge space by way of a communication pipe is provided outside the vessel, the communication pipe is heated at a temperature higher than that of the mercury reservoir by a heater, and the mercury reservoir is controlled in temperature by a Peltier effect element which may be cooled with a water-cooled block provided on one side thereof.This photochemical vapor deposition apparatus can achieve photochemical vapor deposition with high efficiency, because the control of the vapor pressure of mercury for discharge is carried out easily and ultraviolet rays can be radiated with high efficiency.

Abstract: A heat-recoverable polymeric sheet is coated with a solid sheet of heat-activatable sealant by heating the sheet preferably to a temperature above the crystalline melt point of the polymer, applying, preferably by means of a roller, the sealant sheet to the heated polymer sheet while the polymer sheet is at a temperature capable of activating the sealant so as to adhere it to the polymer sheet. The polymer sheet may be flame-brushed after heating and before application of the sheet of sealant. The technique is particularly useful for sheets intended as wrap-around sleeves for use as enclosures, and which thus have closure rails adjacent opposing longitudinal edges thereof.

Abstract: An apparatus for manufacturing photovoltaic devices of the type including a plurality of layers of semiconductor materials deposited onto a substrate includes a plurality of deposition chambers, each chamber arranged to deposit a respective one of the layers of semiconductor materials onto the substrate as the substrate is advanced therethrough. At least one of the deposition chambers is coupled to a source of microwave energy to form a microwave energy excited glow discharge plasma within the at least one deposition chamber for depositing at least one of the layers of semiconductor material onto the substrate from the microwave energy excited glow discharge plasma within the at least one deposition chamber.Also disclosed is an assembly for depositing a material onto a substrate from a microwave energy excited plasma. The assembly includes a deposition chamber, a source of microwave energy, and an antenna extending into the chamber and coupled to the microwave energy source.

Abstract: An upstream cathode system for use with glow discharge deposition apparatus, said apparatus adapted for the production of large area photovoltaic devices. In such apparatus, process gases are commonly introduced into a deposition chamber from a gas manifold disposed on the upstream side of a substrate. As the process gases are drawn across the surface of the substrate, they are continuously disassociated and recombined under the influence of an electromagnetic field developed by a deposition cathode or microwave generator. By providing a precathode system, upstream of the deposition cathode or microwave generator, (1) impurities in the process gases, (2) contaminants from the walls of the deposition chamber and (3) initially disassociated and recombined process gas compositions may be deposited onto and collected from a collection plate disposed upstream of the substrate.

Abstract: An improved method of and apparatus for depositing thin films, such as indium tin oxide, onto substrates, which deposition comprises one step in the fabrication of electronic, semiconductor and photovoltaic devices. The method includes the novel steps of combining the use of (1) an electron beam to vaporize a source of solid material, and (2) electromagnetic energy to provide an ionizable plasma from reactant gases. By passing the vaporized solid material through the plasma, it is activated prior to the deposition thereof onto the substrate. In this manner, the solid material and the reactant gases are excited to facilitate their interaction prior to the deposition of the newly formed compound onto the substrate.

Abstract: An apparatus for physical vapor deposition comprising a vacuum casing one end of which is open; a sealing member provided at the opening of the casing; an electrode for physical vapor deposition, such as a target electrode or an electrode for heating evaporation, which is provided in the casing; and an exhaust hole for exhausting gases in the casing, which is provided at a predetermined wall portion of the casing. The apparatus may also be provided with a gas introducing hole and a bias electrode. The casing is integrally fitted to a body to be treated at the opening end portion thereof by means of the sealing member to form a vacuum chamber therein. This apparatus is compact and enables the surface treatment of a large or immovable body without moving the body.

Abstract: In a radial flow plasma reactor, where reagent gas is introduced into the reaction chamber of the plasma reactor via a gas distribution ring located on the perimeter of a heated substrate holder while diluent gas is introduced into the chamber via the holes in an annular diluent gas member disposed over an rf electrode, an upstanding peripheral shield is provided around the perimeter of the substrate holder, outboard of the reagent gas introduction ports of the gas distribution ring.

Abstract: Vapor deposition coating can be performed in apparatus in which a plasma of the coating material is generated from the surface of an electrode. The surface area of the electrode from which the plasma is generated can be selectively adjusted by exposing the plasma generating surface of the electrode to the influence of a magnetic field and adjusting the strength of the magnetic field to spread plasma over the evaporative surface of the electrode to permit more efficient utilization of the electrode. Preferably, the electrode is in the form of a flat metal disc (e.g. titanium) and the magnetic field is generated by a wire coil that substantially encircles or is coaxial to the electrode, with the electrode or an associated element functioning as a core for the coil.

Abstract: An improved apparatus for preparing a coating by subjecting gaseous reactant precursors to a glow discharge is disclosed. The improvement comprises an electrode which is larger in all dimensions than the substrate which is to be coated. Electrically insulated magnets are arranged such that the area of the magnets is proportionally distributed with respect to the area of the substrate to be coated, whereby enhanced uniformity of quality and thickness of the deposited coating are provided. Unexpectedly the coating deposition rate increases substantially without increasing the power required or precursor consumption, and further, the temperature does not markedly increase during deposition.

Abstract: A system of manufacturing a magnetic recording medium in which a magnetic metal or alloy is heated and evaporated by an electron beam gun so that vacuum-evaporated magnetic film is formed on a non-organic or organic macromolecular base. A plasma generating coil is disposed near an evaporating source and an electron beam passes through the hollow portion of the coil in preferably a direction coaxial with the axis of the coil. High frequency power is applied to the coil and vacuum deposition is carried out with a plasma generated thereby. The flow of vapor of magnetic metal or alloy is applied obliquely to the base and an oxidation gas is introduced into a vacuum container for forming the magnetic film.

Abstract: A method and apparatus for vapor depositing node-free coatings on substrate surfaces, without altering the pre-coating substrate surface dimension, are disclosed. A gaseous plasma (50) is generated within an evacuated deposition chamber (20) from a source (40) of coating material. The plasma generation is preferably performed by electric arc vapor deposition techniques. Means, preferrably a shield (60), are disposed in the chamber to intercept a portion of the plasma stream and to define a shadow region (60') that is substantially void of plasma particles traveling in a line-of-sight path from the source (40). Substrate(s) (30) to be coated are placed within the shadow region and are coated by that portion of the plasma diffusing into the shadow region. The substrates may be biased to ionically attract plasma ions. The shield (60) can be heated by ion bombardment of the plasma and positioned to heat the substrates by radiation. The shield may be electrically biased to enhance the coating operation.

Abstract: Applicants have invented a new low temperature method (50.degree. C. to 500.degree. C.) to deposit and grow microelectronic thin films using cold cathode electron beams to initiate and sustain both gas phase and surface chemical reactions. The new method uses electron beams generated by glow discharge electron guns. Secondary electrons are emitted from these electron guns following ion and fast neutral bombardment upon cathode surfaces and secondary electrons so formed are accelerated in the cathode sheath.Our method uses the plasma generated electron beams to decompose reactant molecules directly by electron impact and indirectly by the vacuum ultraviolet radiation generated following rare gas electron collisions in the beam region. The reactant molecules can be in the gas phase or adsorbed on substrate surfaces. The electron beams are spatially confined and excite only a localized region above the substrate so that direct plasma bombardment of the substrate is avoided.

Abstract: Electrical components which have alternate metal and polymer layers carried on a substrate are produced by fixing the substrates on a rotatable drum and rotating the drum through first and second vacuum chambers which are air-locked with respect to each other. A metal layer is applied in the first vacuum chamber by vapor deposition or sputtering and a polymer layer is provided in the second chamber by a glow discharge operation.

Abstract: A vapor deposition apparatus including a vacuum chamber, a vacuum pump for evacuating the chamber, and a mounting assembly disposed within the chamber and adapted to support and electrically isolate a plurality of substrate electrode units to be coated. Electrical couplings connect the electrode units to a power supply that establishes therebetween potential gradients that produce a glow discharge and resultant heating thereof. Also disposed within the vacuum chamber is a source of evaporative coating for deposition on the glow discharge heated electrode units.

Abstract: A process for producing multi-layer semiconductor devices wherein a plurality of Plasma deposition chambers, an entrance and an exit chamber are provided sequentially with shutter means between them. A different layer is laid down in each chamber on a substrate as it passes sequentially through the system of chambers. During deposition, the shutters are closed. After each deposition, the Plasmas are extinguished, the chambers are evacuated or purged, the shutters are opened, the substrates are advanced to the next chamber, the chambers are refilled with the same reactant gases as previously present, the plasmas reignited and another layer deposited.

Abstract: A magnetic metal deposition material contained in a hearth is heated and evaporated in a vacuum to form a flow of vapor, which is then ionized and converged toward a predetermined deposition surface of a flexible substrate. The flexible substrate is moved obliquely downwardly along a convex course by sliding contact with the curved surface of a fixed curved guiding body between a pair of guide rollers located at different heights above the hearth. The fixed curved guiding body communicates with a coolant source for cooling the substrate moving in contact therewith and may be provided with oscillators. Thus a thin film of the magnetic metal is deposited on the convex surface of the substrate.

Abstract: A film depositing apparatus forms a film with a given thickness on each of a plurality of bases. The apparatus is provided with a casing removably mounted on a base section to form a film depositing chamber whose interior is isolated from the outside space; transfer mechanism for transferring the plurality of bases in one direction inside the film depositing chamber; gas supplying mechanism for feeding material gas into the casing, the gas supplying mechanism including injecting portions arranged along said one direction in the film depositing chamber to inject the material gas in the casing into the film depositing chamber along said one direction; and electric discharge mechanism for activating the material gas injected into the film depositing chamber by the injecting portions.

Abstract: A susceptor for use in a chemical vapor deposition process in a radiant absorption heating system comprises a heater adapted to absorb radiant energy and a sheath of high purity quartz completely surrounding the heater. The sheath further comprises dimples inside the sheath spacing the sheath from the heater. The heater may be graphite having a substantially pinhole-free outgas-inhibiting outer-coating such as silicon carbide.

Abstract: A susceptor for holding substrates during a high temperature vapor deposition process is constructed from separable top, bottom and side plates interlocked to each other in a gravity maintained assembly.

Abstract: Substrates are disposed in a reaction chamber having a gas inlet and a gas outlet and a mixture gas containing at least a semiconductor material gas and a carrier gas is introduced into the reaction chamber in such a state in which a gas in the reaction chamber is exhausted therefrom. An electromagnetic field is applied to the mixture gas to ionize it into a mixture gas plasma in the reaction chamber, by which a semiconductor material is deposited on each substrate. In this case, the semiconductor material thus deposited on each substrate becomes a non-crystalline semiconductor by holding the atmospheric pressure in the reaction chamber below 1 atm and maintaining the substrate at a temperature lower than a temperature at which the semiconductor material on the substrate becomes crystallized.The reaction chamber is provided with a gas ionizing region on the side of the gas inlet and a semiconductor depositing region on the side of the gas outlet.

Abstract: A plasma arc discharge method for deposition of metallic and semiconductor layers on a substrate for the purpose of producing semiconductor grade materials such as silicon at a reduced cost. Magnetic fields are used so that silicon ions and electrons can be directed toward a target area where they are deposited. The ions and electrons are preferably injected as a compound in gaseous of liquid form but may also be injected in liquid elemental form or vaporized from a thermionic cathode. The magnetic fields include an accelerating magnetic field and a focusing magnetic field. The accelerating magnetic field is adjusted to support a desired high ion flux rate and the focusing magnet can control the plasma beam direction and divergence.The silicon provided in a compound form or in the form of metallurigical silicon is purified during the deposition process by a carrier substance which may be a part of the compound or separately injected.

Abstract: Despite the short lifetime of excited plasma gas, a very large number of wafers can be uniformly gas phase treated in the plasma state by using a single high frequency power supply coil or capacitor, not only for exciting reaction gas passing near the wafers in a reaction tube but also for heating radiators, surrounding the substrates, which heat the wafers.

Abstract: An apparatus for treating a textile product with the use of low-temperature plasma includes a reactor, and an arrangement for transporting a textile product to be treated, located within the reactor and arranged to move the textile product between taking-up shafts. The textile product is passed through a passage in the reactor formed between a pair of electrode plates. A mechanism maintains a vacuum in the interior of the reactor, and gas is supplied into the reactor between the electrode plates. The electrode plates are connected to produce a low-temperature plasma therebetween. The textile product such as a cloth, string or yarn can be treated effectively using only small amounts of heat energy and water resource.

Abstract: A method of and apparatus for accurately sensing and reproducibly controlling the intensity of electromagnetic energy in the decomposition region of a deposition chamber. The apparatus includes a detector adapted to (1) monitor the level of radiation emitted from the decomposition region and (2) provide an output signal indicative of said level. The invention further includes circuitry for (1) comparing the signal from the detector with a reference signal indicative of a preselected level of energy, and (2) generating a correction signal indicative of the actual level of energy in the decomposition region relative to the preselected level of energy. According to the method of this invention, the correction signal may be utilized to regulate the source of electromagnetic energy so that the preselected level of electromagnetic energy within the decomposition region is kept constant despite fluctuations in other operating parameters.

Abstract: MOlecular beam epitaxy (MBE) requires that the surface of a substrate on which a semiconductor layer is formed by MBE be clean. Physical etching damages the substrate, while usual chemical etching damages vacuum pumps and contaminates MBE apparatuses. Hydrogen plasma etching can clean a substrate without damaging a substrate and a vacuum pump and without contaminating an MBE apparatus. Further, by combining MBE with formation of a protective layer without breaking the vacuum used in MBE, diffusion of an impurity in the semiconductor layer formed by MBE can be greatly decreased during a subsequent high-temperature heat treatment.

Abstract: At least three spring-mounted members disposed around the periphery of an aperture in a wafer-mounting plate are arranged to engage and securely hold edge portions of a semiconductor wafer to be processed. When the spring-mounted members are actuated toward the front side of the plate, a wafer can be freely moved into or out of the aperture from the back side of the plate by means of a vacuum chuck that contacts only the back side of the wafer. After a wafer to be held is inserted within the aperture, the actuated members are released. The released members move toward the back side of the plate and thereby engage the edges of the inserted wafer and exert radial holding forces thereon. The back side of a wafer so mounted is adapted to be brought into resilient engagement with a pedestal element in a processing chamber, thereby ensuring good thermal and electrical contact between the wafer and the pedestal element.

Abstract: A method for low-temperature plasma treatment of a textile product such as a cloth comprising transporting a textile product to be treated through a reaction chamber, in which low-temperature plasma is produced in situ by applying high frequency electric wave to electrodes provided in the chamber uniformly without stay, for subjecting the textile product to low-temperature plasma treatment uniformly, and an apparatus therefor.

Abstract: A plasma reactor comprises a reaction chamber having two plate-shaped electrodes arranged parallel to and above each other, whereby the substrates are supported on the lower electrode and this electrode is additionally provided with a center opening (5) through which gas is fed into the electrode space or which is evacuated from it, and where (a) the upper electrode is connected to a high frequency AC or RF voltage and (b) which has no electrode material in the regions opposite the substrates and (c) where their position and shape are determined by the substrates on the lower electrode, causing the electric field in the electrode space to be selectively weakened at at least above the substrates.

Abstract: An improvement in the method of forming polymerization resists by directing high energy particles such as electron beams along a path across a vacuum chamber and onto polymerizable molecular species at a substrate surface with sufficient energy to polymerize the polymerizable molecular species in situ is provided, comprising maintaining a chamber-isolated relatively higher pressure layer of polymerizable molecular species vapor locally at the substrate surface during, e.g. electron beam exposure to form the resist while maintaining the beam path free of polymerizable molecular species during beam traverse of the chamber. Polymerization resist generation apparatus is also provided comprising a high energy particle, e.g.

Abstract: An apparatus for treating a textile product continuously with the use of low-temperature plasma comprising; a reactor provided with a seal mechanism for maintaining vacuum therein while allowing a textile product to pass therethrough continuously into and out of the reactor, a plurality of guide rolls provided in the reactor for forming a passage for transporting the textile product in zigzag forming snaky undulations therethrough, and a plurality of pairs of electrode plates spacedly provided in the reactor with the textile product passage located therebetween, a plurality of gas nozzles for supplying a gas for producing low-temperature plasma to the gaps between the electrode plates, a vacuum mechanism for producing vacuum in the interior of the reactor, and means for supplying a high frequency electric wave to the electrode plates to produce low-temperature plasma therebetween.

Abstract: A method and apparatus which permits photolysis of compounds without use of indows to permit unlimited growth of epitaxial layers. Epitaxial layers can include growth of crystals such as iron. A two section reactor chamber with a common opening between the sections is used for the internal production of high energy ultraviolet light to carry out the photolysis. The first section of the reactor chamber containing the substrate to be coated is connected to a source of molecular compound vapor capable of undergoing a photolytic change. A feed system provides a rare gas flow through the second section at low pressure past an electrode discharge system to produce ultraviolet light. The ultraviolet light passes through the opening between the sections and interacts with the molecular compound causing photolytic decomposition of the molecular compound and deposition of the desired epitaxial layer on the substrate.

Abstract: A printed circuit board conveyor apparatus has a conveyor for moving a planar circuit board components mounted on frames, in a vertical plane, seriatim, along a first path through a spray treatment area. The components are then raised and returned toward a starting point along a second path with additional processing occurring during the return trip. The use of an overhead return along with positive positioning of the components provides substantial efficiency and allows precision and accuracy in treatment of printed circuit board components while minimizing floor space requirements.

Abstract: A packaged lumber-dipping apparatus comprises a dipping tank of lumber-preserving fluid, a submersible roll case section supported by a hoist mast for lowering a package of lumber into the tank, and infeed and outfeed conveyors. A clamp is mounted on the hoist mast for clamping the package down on the roll case section so that the lumber will not float when submerged in the tank. The infeed conveyor is positioned at an end of the roll case section for feeding a package of lumber lengthwise onto the roll case section. The outfeed conveyor, positioned alongside the tank, receives the package of lumber from the roll case section after dipping. Two tiltable skate roll sections in the roll case section, connected by chains to the clamp, tilt toward the outfeed conveyor when the clamp is raised to unload the package onto the outfeed conveyor after dipping.

Abstract: An arc plasma generator comprises a consumable cathode, a cylindrical anode, and a focusing solenoid arranged coaxially with the consumable cathode. A power unit for maintaining the arc is electrically connected to the consumable cathode and the anode. In accordance with the invention the arc plasma generator further comprises a tubular plasma guide connected to an end face of the anode and an electromagnet. The electromagnet is arranged in the tubular plasma guide on the axis thereof and is enclosed in a housing made of a nonmagnetic material and having a cross-sectional area sufficient to conceal the cathode from the viewer's sight, looking in the direction of the cathode through the plasma guide. Also, the focusing solenoid is arranged on the tubular plasma guide and is connected in opposition with the coil of the electromagnet. A plasma arc apparatus for treating the surfaces of work-pieces comprises an arc plasma generator of the invention and an assembly for holding the work-piece to be treated.

Abstract: A beryllium oxide (BeO) film is disclosed, which is produced by impinging partially ionized vapor of metal beryllium and oxygen upon a substrate.

Abstract: A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

Abstract: An ion shower apparatus comprising a plasma formation chamber in which plasma is produced so as to produce ions, a single ion extraction grid disposed in one portion of the plasma formation chamber and for extracting the ions from the plasma formation chamber so as to form an ion beam in the form of shower, a specimen chamber in which the surface of a specimen subjected to etching or deposition or a target subjected to sputtering is irradiated with the ion beam in the form of shower, and a shield grid disposed in the vicinity of the ion extraction grid in the plasma formation chamber and spaced apart from the thickness of the plasma sheath produced over the ion extraction grid, in a manner that the shield grid permits the passage of the plasma therethrough and prevents the electric field produced by the ion extraction grid substantially from extending to the remaining region of the plasma formation chamber. The ion extraction grid is not damaged. An ion beam with a high current is obtained stably.

Abstract: A trigger apparatus and method for striking an electrical arc at the surface of a coating source material within a vapor deposition chamber is disclosed. A plunger member is mounted for axial movement in a housing configured for attachment to an inlet port of a deposition chamber. The plunger has one end adapted to carry an arc-initiating wire contact. A pneumatic drive cylinder axially reciprocates the plunger member with positive force strokes in both directions such that the wire contact alternately engages and disengages the surface of the cathode source material. Seal means are provided for maintaining a vacuum seal of the deposition chamber through the trigger apparatus. Dynamic shield means are mounted adjacent the inlet port for protecting the seal members from being coated by vapor particles within the deposition chamber. Alignment means cooperatively engage the plunger member for maintaining a positive angular position of the plunger member during reciprocal motion thereof.

Abstract: A method of evaporating an evaporative substance under vacuum comprises bombarding the evaporative substance with electrons from a low voltage arc discharge established between a cathode and an anode which is located in an evaporation chamber and simultaneously supplying additional power for evaporation to the evaporative substance by means of an electron gun which produces an electron energy in excess of one keV. A device for carrying out the invention comprises an evacuable bowl, an evaporation chamber with a receptacle therein for a substance to be evaporated and means for establishing a low voltage arc discharge between a cathode and an anode located in the evaporation chamber, a further provision of an electron gun for bombarding the substance with electrons which has an electron energy more than one kilovolt.

Abstract: A system and method for evenly heating semiconductor wafers in a horizontal elongated reaction tube, wherein a furnace surrounding only a part of the length of the reaction tube is caused to move so as to pass along each wafer placed in the reaction tube. The system is especially useful for processing wafers at high temperatures for a short period of time.

Abstract: Briefly, the apparatus in accordance with this invention features an energy coaxial feedthrough fix-mounted in the wall of the vacuum chamber for supplying electrical and mechanical energy from sources located externally of the vacuum chamber to within the vacuum chamber. Additionally, the apparatus includes a movable coaxial coupler capable of releasably engaging the coaxial feedthrough and additionally releasably latching a substrate holder. Finally, the apparatus includes a linkage assembly located within the chamber connected to the coupler so that the coupler may be located in a first position proximate an access port in the chamber wall to facilitate quick and convenient loading of a substrate holder and a second position in which the coupler may be connected to the feedthrough for uniformly transmitting electrical and mechanical energy to the substrate holder and the substrates thereon.

Abstract: An apparatus for manufacturing a magnetic recording medium using vacuum-deposition from an evaporated metal source having a very high efficiency and uniform deposition. The support onto which the magnetic film is to be evaporated is guided and conveyed along a curved path above a molten metal evaporating source at a substantially constant speed. The curved path is shaped such that evaporated metal flow lines connecting a central point on the evaporation surface of the molten metal in the evaporating source to corresponding intersection points on the support form the same angle of incidence with respect to the longitudinal direction of the support for all positions along the support where the film is to be deposited. Endless belt structures including guide rollers and magnets are used to form rising and falling paths for conveying the support along the desired curved path.

Abstract: A coating apparatus and method for coating industrial cutting and turning tools of any desired shape and configuration and the like significantly to improve the tools' working properties. The coating is formed of cubic boron nitride, with a preferred thickness not exceeding ten microns. The coating apparatus includes an rf excited plasma source chamber having a gas feed ring for ionizing a gas admitted into the chamber via the ring. The preferred feed gas is a borazine and benzene vapor mixture. A coating chamber is mounted adjacent to and contiguous with the plasma source chamber via a neck portion. The coating chamber includes a vacuum interlock to permit the entry and removal of a tool transport. At least one vacuum pump is operatively connected to the chamber. Preferably, a plurality of permanent magnets and electron supply filaments are arranged circumferentially about the plasma source chamber. Preferably, the tool transport is rotatable during coating.

Abstract: An apparatus for producing improved large area photovoltaic devices by substantially reducing the warpage of relatively large area, relatively thin webs of magnetic substrate material which travel through a plurality of high temperature, low pressure glow discharge deposition chambers. As the web of the substrate material moves through the deposition chambers, it assumes a normal, elongated path of travel. Due to the elevated deposition temperature, the elongated path of travel, the force of gravity, etc., the web has a tendency to warp. Warpage of the web is undesirable as it promotes the deposition of non-uniform semiconductor alloy layers. The improvement of the present invention contemplates the establishment of at least one magnetic field within each deposition chamber which is adapted to urge the web of substrate material out of its normal path of travel into a flat, substantially planar path of travel.

Abstract: The formation of a body of material on a substrate having at least two layers of different composition is made possible by the improved system and method of the present invention with minimized cross contamination between the respective deposition environments in which the layers are deposited. The disclosure relates more specifically to the use of the system and method for the deposition of multi-layered amorphous silicon alloys to form photovoltaic devices. As a preferred embodiment of the invention, first, second, and third glow discharge deposition chambers are provided for depositing respective first, second, and third amorphous silicon alloy layers on a substrate. The second layer is substantially intrinsic in conductivity and differs in composition from the first and third layers which are of opposite conductivity type by the absence of at least one element.

Abstract: An apparatus for treating a cloth continuously with the use of low-temperature plasma comprising a reactor provided with seal mechanisms, a plurality of cloth guide rolls provided up and down in the reactor for transporting a cloth zigzag forming snaky undulations, a plurality of partition walls provided up and down alternately in the reactor for forming zigzag cloth passages to transport the cloth therebetween, a gas supply opening provided in the vicinity of the cloth outlet for jetting a gas to the zigzag cloth passages, a pair of electrode plates provided in adjacent to the gas supply opening for producing low-temperature plasma with the combined use of high frequency electric wave applied thereto and the gas jetted from the gas supply opening, and a vacuum duct provided in the vicinity of the cloth inlet of the reactor. It is preferable further to provide a plurality of electrode pairs in the reactor by putting the zigzag cloth passages therebetween.

Abstract: Installation for the deposition of thin layers in the reactive vapor phase by plasma.The installation comprises a coaxial conductor, whose core is hollow and is used for introducing gas into a chamber having a row of openings. The conductor is also used for introducing the high frequency field necessary for exciting the gas. A substrate or sample holder moves beneath the row of openings.Application to the deposition of thin layers with a large surface.

Abstract: Metal substrates, preferably of titanium and titanium alloys, are coated by alloying or forming TiN on a substrate surface. A laser beam strikes the surface of a moving substrate in the presence of purified nitrogen gas. A small area of the substrate surface is quickly heated without melting. This heated area reacts with the nitrogen to form a solid solution. The alloying or formation of TiN occurs by diffusion of nitrogen into the titanium. Only the surface layer of the substrate is heated because of the high power density of the laser beam and short exposure time. The bulk of the substrate is not affected, and melting of the substrate is avoided because it would be detrimental.

Abstract: Apparatus and method for evaporation arc stabilization including a target having a surface of material to be evaporated; circuitry for establishing an arc on the target surface for evaporating the target material, the arc being characterized by the presence of charged particles and a cathode spot which randomly migrates over the target surface; and a confinement ring contacting and surrounding the target surface, the ring being composed of a material such as boron nitride having (a) a secondary emission ratio less than one at the mean energies of the charged particles of the arc and (b) a surface energy less than that of the evaporated target material to thereby confine the cathode spot to the target surface. Further, the secondary emission ratio of the confinement ring is preferably less than that of the target.