Abstract: An electrostatic spray coating device for electrically conductive, non-combustible coating fluid. The coating fluid is accommodated in a pressure container (2) of electrically insulating plastic and connected over a tube (10) of electrically insulating material with a spraying device (8). An electric conduction path (53) heads off high voltage from the coating fluid (6) which is present in the pressure container (2) when the high voltage is switched off. Thereby the electrical capacitance of the device is reduced and simultaneously it is ensured that after the switching-off of the high voltage the coating fluid present in the pressure container (2) in a few seconds is no longer electrically charged. Thereby, immediately after the switching-off of the high voltage, the pressure container (2) can be opened, for example for the replenishing of coating fluid.

Abstract: A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.

Abstract: A laser ablation apparatus and method are provided in which multiple targets consisting of material to be ablated are mounted on a movable support. The material transfer rate is determined for each target material, and these rates are stored in a controller. A position detector determines which target material is in a position to be ablated, and then the controller controls the beam trigger timing and energy level to achieve a desired proportion of each constituent material in the resulting film.

Abstract: An improved vacuum arc coating apparatus is provided, having a reaction zone with a plasma channel defined within a series of aligned annular substrate holders, or between an outer wall of a chain of substrate holder blocks and the inner wall of the tube. The substrate holders thus act as a liner, confining an arc within the plasma channel. Carrier and plasma creating gases and the reaction species are introduced into the tube, and the deposition process may be carried out at a pressure between 10 Torr and 1000 Torr. Magnetic coils may be used to create a longitudinal magnetic field which focuses the plasma column created by the arc, and to create a transverse magnetic field which is used to bias the plasma column toward the substrates. Substrates can thus be placed anywhere within the reaction zone, and the transverse magnetic field can be used to direct the plasma column toward the substrate, or the tube itself can be rotated to pass the substrate through the plasma column.

Abstract: A chuck (82) for lamp-heated thermal and plasma semiconductor wafer (38) processing comprises an absorbing surface (171) for absorbing optical energy from an illuminator module (84) that transforms the electrical energy into radiant optical energy. Chuck (82) includes an absorbing surface (171) that absorbs optical energy and distributes the resultant thermal energy. From the absorbing surface, a contact surface (168) conducts the heat energy to semiconductor wafer (38) and uniformly heats the semiconductor wafer (38) with the distributed thermal energy. Chuck (82) not only provides significantly improved process temperature uniformity, but also allows for the generation of RF plasma for plasma-enhanced fabrication processes as well as for in-situ chamber cleaning and etching. Additionally, chuck (82) provides at least two methods of determining semiconductor wafer temperature; a direct reading thermocouple (112) and association with the pyrometry sensor of illuminator module (84).

Abstract: A thin film is formed on a substrate in a reaction chamber using a photo CVD technique by decomposing a reactive gas supplied to the reaction chamber by means of light irradiated through a light introducing window. The reduction in film deposition rate due to clouding of the light introducing window is corrected in order to form a thin film of a desired film thickness.

Abstract: A method for heating or cooling a semiconductor wafer in semiconductor processing apparatus is described which comprises directing into contact with a surface of the wafer at least a portion of one or more components of the process gas to transfer heat between the wafer and a wafer support positioned in the apparatus adjacent to the wafer. Method and apparatus are also described for controlling the total flow of process gas through the apparatus and for monitoring the pressure in said apparatus to maintain the desired pressure therein.

Abstract: A solution applying apparatus has inner and outer cups each having an upper opening, the inner cup being rotatably disposed in the outer cup. The inner cup houses a planar workpiece such as a glass substrate therein which is to be coated with a coating solution such as a resist solution. The solution applying apparatus also has a lid assembly having an outer cup lid for closing the upper opening of the outer cup and an inner cup lid for closing the upper opening of the inner cup, the inner cup lid being rotatable with respect to the outer cup lid. The inner cup has drain holes defined in an outer circumferential portion thereof for providing communication between a space within the inner cup and a space outside of the inner cup to drain an excessive coating solution from the inner cup. The outer cup has an annular collection passage defined therein along the outer circumferential portion of the inner cup, the drain holes opening into the annular collection passage.

Abstract: A glass substrate is supported on a pedestal in a rotatable cup having an upper opening. The pedestal, which is substantially similar in shape to the glass substrate, has a ridge extending along an outer peripheral edge of an upper surface thereof, for engaging an outer peripheral edge of a lower surface of the glass substrate. After a resist solution to be coated on the glass substrate is applied to an upper surface thereof, the upper opening of the rotatable cup is closed by a cover, and then the rotatable cup is rotated to spread the applied resist solution uniformly over the upper surface under centrifugal forces. In one embodiment, the apparatus comprises an inner rotatable cup and an outer rotatable cup, each with its own separate cover. In another embodiment, a pedestal is mounted on the bottom of the inner cup having a vacuum chuck movable therein.

Abstract: A tray assembly comprising a bottom tray, a support grid, and a top screen. The bottom tray includes a generally flat bottom wall having an upturned side, the side forming a ledge. The outer contour of the grid is similar to that of the ledge and the ledge supports the outer periphery of the grid, the grid extending across the flat bottom. The top screen comprises a flat screen and a border member around the periphery of the screen, the border member being secured to the screen and removably attached to the upturned side of the bottom tray. When assembled, the top screen is supported by the grid and the grid is supported by the bottom tray, and a piece of greenware to be cleaned is placed on the top screen. Scrapings from the greenware fall through the screen and the grid and into the bottom tray. After the piece has been cleaned and bisque fired, a person may turn the tray upside down and place the piece on what is normally the underside of the bottom tray.

Abstract: Method and apparatus for depositing a thin layer of a target material onto a substrate by illuminating the target material with at least one ring-shaped elliptical laser beam so that a ring-shaped deposition plume is emitted from the target material, and positioning the substrate to receive the emitted material. Concentric, ring-shaped elliptical laser beams are formed by use of a multi-faceted negative axicon.

Abstract: An applicator for applying wetted, pasted wallpaper border to a wall comprising: a tray having parametral sidewalls; a handle connected to the tray; a spool disposed at one end of the tray within the sidewalls for dispensing a roll of the wallpaper border; a roller disposed at another end of the tray within the sidewalls for applying the wallpaper border to the wall; and a wiper blade disposed between the spool and the roller for wiping excess paste and water from the border.

Abstract: The present invention provides a method and apparatus for a removable weir overflow bath system with gutter which decreases manufacturing costs and increases user flexibility. Manufacturing costs are decreased by forming a weld with a low probability of breakage. Because breakage probability is low material costs and labor costs resulting from bath system manufacture is reduced. Furthermore, the present invention offers increased flexibility since the user need only replace the removable weir to change the scallop characteristics and obtain a new bath system. The preferred embodiment of the present invention includes a four-sided removable weir and a quartz container with gutter. The gutter region of the container is formed by welding a member of an L-shaped quartz structure to the top edge of an open top rectangular quartz container. A resilient material is placed on top of the gutter region along the corner formed by the gutter region and quartz container.

Abstract: In the liquid non-applying operation, an upper and a lower liquid receivers 90A and 90B are located in between a conveyance passage for a base plate 6 and an upper and a lower wet rollers 48A and 48B to prevent an air bubble generation preventive liquid from being applied from the wet rollers to the base plate. In that case, the base plate 6 is conveyed through between the liquid receivers 90A and 90B so that the plate does not come into contact with the wet rollers 48A and 48B. Slide members 114 and hold-down members 116 are provided for the liquid receivers 90A and 90B so that the receivers can be optionally moved in between and out from between the base plate conveyance passage and the wet rollers 48A and 48B to optionally perform either the liquid non-applying operation or the liquid applying operation.

Abstract: Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Following this procedure, the tool is then be used for product runs.

Abstract: An improved reactor for a high-temperature deposition reaction on seed particles is constructed with a fluidized bed which is divided into a heating zone and a reaction zone by a partition. Seed particles in the heating zone are fluidized by a carrier gas and are heated by microwaves. On the other hand, the reaction zone for the deposition reaction, through which reaction gases pass, is heated by particle mixing between the reaction zone and the upper section of the heating zone. Subsequently, a desired reaction temperature at the reaction zone is maintained stable without deteriorating the microwave heating of the heating zone.

Abstract: A method for coating individual items each having two plain and parallel sides comprises two process steps, wherein an item is first sprayed with a coating when it passes a spray box, and wherein the coating is then hardened, with at least two mutually adjoining sides of the item being treated in both steps. The method comprises two stages, each of which comprises both process steps, and where the item in the first stage at least in the second step is supported on a side which is not treated, after which the remaining sides on the item are treated in the second stage where the item is supported on a side which was treated in the first stage. The items at least in the second step in one of the stages are supported on the one parallel side by vacuum between the item and a conveyor belt. The contact between the item and the conveyor belt is initiated by air jets directed towards the conveyor belt. An apparatus is also proposed for carrying out the above method.

Abstract: An apparatus for manufacturing a hermetically coated optical fiber having a single reaction chamber into which a fare fiber and raw gas are to be introduced for applying a hermetic coating to the bare fiber while the bare fiber passes through the reaction chamber is characterized by that the reaction chamber has a plurality of inlet tubes to introduce the raw gas, and the plurality of inlet tubes open to the reaction chamber at different positions from each other in a direction of movement of the bare fiber passing through said reaction chamber.

Abstract: A reactor for applying a carbon coating to an optical waveguide fiber wherein the buildup of reaction by-products within the reactor is reduced by providing internal and external fiber exit ports with the diameter of the internal fiber exit port being greater than the diameter of the external fiber exit port, and gas shielding at the external fiber exit port.

Abstract: Apparatus for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.

Abstract: A compact slide spinner is disclosed. In the preferred embodiment, the compact slide spinner is used to prepare smears for microscopic evaluation. The spinner incorporates a disposable or reusable slide holder which encases a portion of a slide onto which the material to be smeared is placed. The holder containing the slide is then accelerated by spinning. Specimen fluid not adhering to the slide is contained within the slide holder which is discarded following preparation of the smear. Using this low-cost device, a uniform quality smear is quickly and easily prepared, while reducing the risk that laboratory personnel will be exposed to aerosol borne contagions.

Abstract: Methods and apparatus for selectively depositing a layer of material from a gas phase to produce a part comprising a plurality of deposited layers. The apparatus includes a computer controlling a directed energy beam, such as a laser, to direct the laser energy into an unheated chamber substantially containing the gas phase to preferably produce photodecomposition or thermal decomposition of the gas phase and selectively deposit material within the boundaries of the desired cross-sectional regions of the part. At least one component of the gas phase is a vapor which condenses at a temperature above the ambient temperature of the chamber. Each such component can exist at a partial pressure no higher than its equilibrium vapor pressure at the chamber ambient temperature. For each cross section, the aim of the laser beam is scanned over a target area and the beam is switched on to deposit material within the boundaries of the cross-section.

Abstract: An apparatus for zone melting a thin semiconductor film comprises an first laser for heating the thin semiconductor film, at least one additional laser for heating an insulating substrate, a first temperature detecting device for detecting the temperature of a melted portion of the thin semiconductor film, and a second temperature detecting device for detecting the temperature of a solidified portion of the thin semiconductor film. The apparatus further comprises a first controller for controlling an output of the first laser so as to maintain the temperature of the melted portion in a first predetermined temperature range, and a second controller for controlling an output of the additional laser so as to maintain the temperature of the solidified portion in a second predetermined temperature range.

Abstract: An improved method of fabricating integrated circuit structures on semiconductor wafers using a plasma-assisted process is disclosed wherein the plasma is generated by a VHF/UHF power source at a frequency ranging from about 50 to about 800 MHz. Low pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out within a pressure range not exceeding about 500 milliTorr; with a ratio of anode to cathode area of from about 2:1 to about 20:1, and an electrode spacing of from about 5 cm. to about 30 cm. High pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out with a pressure ranging from over 500 milliTorr up to 50 Torr or higher; with an anode to cathode electrode spacing of less than about 5 cm.

Abstract: Disclosed is a system, including both method and apparatus, for enhancing the plasma etching of a semiconductor wafer. The system enhances etchant uniformity while greatly reducing plasma contamination. Etching is performed in a housing for processing a semiconductor wafer having a wafer perimeter defined by an outer wafer edge, a top surface and a bottom surface. The plasma etch technique includes a plasma positioned substantially coplanar with and proximate to the semiconductor wafer. The plasma has a perimeter defined by an outer plasma edge and extending beyond substantially all of the wafer perimeter. Provided is a means for introducing an inert gas between the wafer perimeter and the plasma perimeter so the inert gas may or may not hit the wafer's bottom surface. Plasma and wafer can each have a circular shape where the plasma and the wafer are proximate to each other.

Abstract: A mass production method of hermetic coating optical fiber where a bare fiber drawn from a preform is hermetically coated by CVD method in a reactor vessel, wherein a liquid flushes solid particles or by-products sticking to the reactor inner wall. The liquid may be supplied continuously or intermittently, to flush carbon particles generated during carbon coating process. The invention enables to produce a long hermetic coating optical fiber without choking the reactor, and improves a yield rate and productivity.

Abstract: A multi-color powder coat paint recovery apparatus that permits rapid color changes in a powder coat operation comprises a rotatable paint booth positioned adjacent to a painting station, with the booth having a plurality of individual paint color chambers angularly spaced around the periphery of the booth. Each chamber has an open outer side and a filter mechanism at an inner side, with the inner side being in communication with an exhaust outlet from the interior of the housing. The chamber further has primary and secondary paint hoppers positioned below each filter mechanism. An air circulating mechanism draws air inwardly from the painting station through the open outer side of the chamber, through the filter mechanism, out of the housing through the air outlet, and then returns the air through a filtered outlet in a plenum chamber behind the paint applicator. Each color chamber corresponds to a separate paint color.

Abstract: A gas distribution head for plasma deposition and etch systems includes an electrically conductive casing surrounding a plenum chamber. The casing includes a gas inlet and a gas outlet in the form of apertures through the casing. An electrically conductive electrode is positioned within the casing with respect to the interior surfaces of the casing such that a plasma forms between the electrode and the casing upon application of an electrical potential between them. A reactive gas is injected between the two electrodes which is struck to form a plasma for cleaning the inner surfaces of the plasma chamber of undesirable particulates and residues.

Abstract: A method of tinning tinnable areas of an electronic component package, the method comprising a first step during which additional metal is applied in the liquid state to said tinnable areas, and a following step during which at least one cycle of oscillations about an equilibrium position is applied to the package while said metal thus applied is still in the liquid state, for the purpose of setting up successive and opposite displacements of masses of said metal along said areas in order to obtain a uniform distribution of said metal over said areas.

Abstract: An intermediate roll is immersed in the sealing liquid accumulated in the U-shaped sealing tank. First reversing rolls and second reversing rolls are located above the vacuum end of the tank and third reversing rolls and fourth reversing rolls are located above the open end of the tank. Two endless belts extend from the first roll to the second roll, and extend from the second roll to the third roll via the intermediate roll, and extended from the third roll to the fourth roll, and are return to the first roll via the intermediate roll. The endless belts have means for separably joining both the side edges of one endless belt to that of the other. A steel strip is inserted into the gap between the endless belts at any one pair of reversing rolls located in an upstream side, and is released from any one pair of reversing rolls located in a down stream side.

Abstract: A multi-zone multi-electrode plasma processing method for uniform plasma processing and effective in-situ fabrication reactor process chamber (10) cleaning during a plasma deposition or etch process first comprises the steps of flowing plasma deposition or etch gases into the process chamber (10) in a chopped or continuous mode (line 214) followed by flowing plasma gases into the process chamber (10) in a chopped mode (220) or a continuous mode. By intermittently activating (224) at least one plasma electrode (24 or 52) upon initiating flow of the plasma processing gas, the method generates a process plasma medium to perform the plasma-enhanced deposition or etch process. Additionally, intermittently activating the same or a different configuration of plasma electrodes (66), during the time that the process gas flows are stepped, an in-situ cleaning plasma is produced for performing a plasma-assisted chamber cleaning process.

Abstract: A coating apparatus includes two spin chucks located in a single casing to support and rotate wafers. A waiting trench is located between the spin chucks to discharge that part of coating liquid which has been hardened at the tip of a nozzle. The wafers are loaded and unloaded to and from the spin chucks by a single carrying member located outside the casing. A coating liquid supply mechanism includes the single nozzle for dispensing coating liquid onto the wafers supported by the spin chucks. The nozzle is moved between the spin chucks by a moving arm. Processing cycles relative to the spin chucks are set for a same processing time and the processing cycle relative to one of the spin chucks is shifted from that relative to the other by a half cycle. The nozzle is rested on the waiting trench at the time when it does not dispense the coating liquid onto the wafers supported by the spin chucks.

Abstract: An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The combination of substrate heating source using infrared rays and a laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and improving the high reproducibility and controllability.

Abstract: Substrate holders (16) having approximately plate-like, parallelepipedal configuration which can be moved in the vertical position along a given transport path through coating stations. The substrate holder (16) has frame-shaped sides parts (16a, 16b) disposed in parallel planes, in whose window-like openings (25, 26) the substrates (22, 23) are received. Wiping contacts (29, 29a and 30, 30a) are provided on stationary mountings (27, 28) and their resilient ends make contact with the electrically conductive coating (22a, 23a) upon movement through the station, and an electrical circuit can be closed briefly through these wiping contacts (29, 29a and 30, 30a) and the coating (22a, 23a), producing a heating and tempering of the material of the coating.

Abstract: An apparatus and method including a droplet coating generator for generating a stream of electrically charged coating droplets within an evacuable chamber towards a substrate positioned within the evacuable chamber. A piezoelectric vibrator and orifice plate coupled thereto generate the stream of coating droplets. The coating droplets are urged to move in a sweeping motion across the substrate by at least one pair of opposing spaced apart electrodes powered by an electrical power supply. A uniform coating is thus produced while the evacuable chamber is maintained at subatmospheric pressure as required during typical semiconductor processing. Multiple applications of a photoresist coating may be applied by the coating apparatus without requiring that the evacuable chamber be repeatedly vented and pumped down to subatmospheric pressure.

Abstract: An electron beam is radiated on an ion-plating material to heat and evaporate this material, thereby generating a vapor flow of the material. The vapor flow of the material is converged by a hood-like electrode, and at the same time, a positive voltage is applied to the electrode to attract thermoelectrons from the material. The vapor flow is ionized by the thermoelectrons. The converged and ionized vapor flow is deposited on a surface of a strip, thereby performing ion plating.

Abstract: In a plasma surface treating method, a sample to be treated is supported on a first electrode within a vacuum vessel and a second electrode is caused to confront the first electrode. Active species of negative ions are then generated by means of a direct current glow discharge produced in an abnormal glow discharge region and are subsequently impinged upon a surface of the sample to induce a chemical reaction with the sample.

Abstract: A vertical wafer heat treatment apparatus for for forming a film on and dry etching a plurality of wafers stored in a wafer boat. The apparatus has at least first and second load lock chambers connected by a gate. Each load lock has an inert gas independently introduced therein and exhausted therefrom. The load lock chambers are vertically connected between two separate process containers. An elevator is provided in the first load lock chamber to transfer a wafer boat into and out of the first container. A transfer means is provided in the second load lock to transfer wafers into and out of a wafer boat.

Abstract: In an apparatus for the plasma treatment of semiconductor devices, a cover is provided on the outer periphery of the space between the upper and lower electrodes. By virtue of the provision of the cover on the outer periphery of the inter-electrode space, the processing gas ejected from ejection holes on one surface of the upper electrode diffuses evenly in the inter-electrode space to reach the surface of the semiconductor wafer. Therefore, it is possible to improve the efficiency at which the wafer is processed as well as the evenness with which various portions of the surface of the wafer are treated.

Abstract: A resin-sandwiched metal laminate, a process and apparatus for producing the same and a process for producing a resin film for the resin-sandwiched metal laminate are disclosed. The laminate comprises a pair of face and back metal sheets and a resin layer and is capable of passing electricity between the face and back metal sheets, the resin layer being composed of electroconductive filler-containing resin regions at the side edges of the resin layer in the width direction of the metal sheets and an electroconductive filler-free resin center region provided between the electroconductive filler-containing resin regions at the side edges.

Abstract: The growth rate of a compound semiconductor thin film is freely enhanced or suppressed by establishing a proper temperature of a substrate 10, and by irradiating by an MOMBE technique, portions corresponding to a desired pattern on the substrate 10 with laser rays having an energy lower than that of photon which can directly decompose an organometal during film growth. A compound semiconductor thin film having a fine pattern with complicated unevenness can be formed on the substrate 10. The relative positions of the source 11 of laser rays, the optical systems 12 and 31 for irradiating the substrate with the laser rays, and the substrate 10 in the vacuum chamber 1 are maintained constant by mounting the body 1 of the MOMBE system, the source 11 of the laser rays, and the optical system 12 and 31 for guiding the laser rays to the body 1 of the MOMBE system on a vibration proof base 30, whereby the formation of a fine pattern becomes possible.

Abstract: The pressure-reduced chamber system of the invention includes a handling mechanism for loading and/or unloading a semiconductor wafer between a process chamber in which a plasma etching is carried out on a semiconductor wafer under a reduced pressure, and a pressure-reduced chamber. Further, the system includes an outer cover for covering the driving force transmitting section of the handling mechanism, a filter mounted to the outer cover such that it defines the inside and outside of the outer cover, and an exhaustion pump for evacuating the space region formed between the outer cover and the pressure-reduced chamber. Thus, when the space region is evacuated by the exhaustion pump, the dust generated from the driving force transmitting section of the handling mechanism is caught by the filter.

Abstract: An inert ultraviolet light reaction chamber is provided with a flow of liquid on its light transmitting wall surface. The fluid prevents the build up of light blocking deposits, controls the temperature, and filters out undesired portions of the spectrum.

Abstract: A method and apparatus for impregnating the superconductors on a superconductor winding with epoxy such that a vacuum/pressure containment vessel, in which the winding is placed, allows epoxy to be introduced into the vessel whereby the epoxy eventually impregnates the superconductors through the application of various evacuating, pressuring and epoxy transporting steps.

Abstract: An apparatus for forming a deposited film comprises a deposition chamber holding a carrier therein, a halogen radical-introducing tube for introducing into said chamber a radical containing at least halogen atoms and a hydrogen radical-introducing tube for introducing into said chamber a radical containing hydrogen atoms, the halogen radical-introducing tube and the hydrogen radical-introducing tube each having an angle of 40.degree. to 50.degree. to the surface of said carrier, and a deposited film is formed on said carrier from said radicals.

Abstract: The invention concerns a method and apparatus for producing a carbon coated optical fiber. An optical fiber is drawn through a reactor tube. Reactant gas is flowed into the tube and onto the fiber where it reacts to form a carbon coating on the fiber. The reactant gas and reaction products are flowed in the direction of movement of the fiber and out of an end of the tube and into a receiving chamber having a diameter larger than that of the reaction tube. The reactant gas continues to react as it flows through the tube and after it exits the tube. At least some of the reaction product deposit on the surface of the receiving chamber where it has no adverse effect on the draw process.

Abstract: The invention provides an apparatus for metal plating a substrate. The apparatus includes a chamber adapted to receive metal carbonyl gas. The chamber includes an infrared transparent window. The infrared transparent window has a cooling passage filled with liquid coolant. The liquid coolant has a temperature below which decomposition of the metal carbonyl gas occurs. The liquid coolant prevents decomposition of the metal carbonyl gas on the infrared transparent window. The liquid coolant also is substantially infrared transparent for allowing infrared radiation through the infrared transparent window and cooling passage into the chamber. An infrared radiation source sends infrared radiation into the chamber through the infrared transparent window and cooling passage to heat the substrate to a temperature at which decomposition of the metal carbonyl gas occurs.

Abstract: There is provided a method of spray deposition in which a stream of liquid metal or metal alloy is atomized inside a spray chamber into a spray of atomized droplets. A metal or metal alloy collector is rotated about an axis transverse to the mean axis of the spray and in the path of the spray so that a deposit is formed about the collector with a bond between the deposit and the collector sufficient to isolate the interface from oxygen penetration. The collector is then retained as an integral part of the final product and further processed to substantially eliminate porosity in the region of the bonded interface. The collector and the deposit may be the same or different materials, and the bond between the deposit and the collector is preferably enhanced by plasma heating in the region disposition. The invention also provides a plant for carrying out the preferred method arc plasma heating.

Abstract: An impregnating carbonizing process and apparatus which permit reduction in cost of consumable goods and can operate at a reduced cost and a heating and vacuum impregnating operation which requires a very long period of time can be performed on the outside of an expensive high pressure vessel to accomplish rapid carbonization and baking.

Abstract: An apparatus is disclosed for the application of dielectric films to a surface according to the so-called PECVD (plasma enhanced chemical vapor deposition) process.By means of a shield (T) disposed in a simple parallel plate reactor, direct contact of the surfaces (PR) to be coated with the plasma, and thus damage to the resulting films due to the action of the plasma is avoided.If the shield is in a movable arrangement, it can be removed during the coating process or its position can be changed. It then becomes possible to apply layers alternatingly with the use of the shield, or in a time saving manner, in direct contact with the plasma.