Abstract: Apparatus and method for continuously forming sputter-coated glass fibers. The apparatus includes a sputter vessel into which freshly drawn fiber is passed before surface contamination can occur. The sputter vessel includes modular sputtering units which are arranged to provide sputter deposition of one or more coatings onto the fiber or capillary tube as it passes through the sputter vessel. Roughing chambers may be provided on either end of the sputter vessel and include orifices sized to allow passage of the fiber through the orifice without contact. An improved sputter coating apparatus is also disclosed.

Abstract: A process and apparatus for producing semiconductor integrated circuit devices wherein the dry processing and the wet processing are continuously effected for the wafers to be processed, and the wafers are transferred between these processings under a vacuum condition or in a purging gas without being allowed to come in contact with the open air, to avoid adverse effects that will be caused by the open air.

Abstract: A method and apparatus are disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons through an outlet at one axial end of the chamber. The circumferential magnets in the symmetrical chamber cause precessing of the electrons resulting in greatly increased plasma density and ion flux or current density even at low gas pressures which are preferably maintained for establishing unidirectionality or anisotropic plasma characteristics.

Abstract: A vacuum processing apparatus in which a DC bias to be produced on the surfaces of substrates which are to be processed in a vacuum chamber can be mechanically and easily controlled by adjusting the position of a susceptor in respect to an electrode body, and the susceptor and other components in the vacuum chamber can be easily cleaned while maintaining a desired evacuated condition and a desired processing performance in the vacuum chamber.

Abstract: For forming a metal film of a desired property on a substrate, a target and the substrate are placed in a pressure-reducing chamber, and then pulse laser is irradiated to the target. This causes the component materials, such as ions, electrons, neutral atoms, cluster, fine grains and liquid drops, of the target to be emitted from the target, and then laser induced plasma is produced. These emissions of substances have spatial and timewise distribution determined by physical and chemical states. Then, a shielding plate having an opening is placed between the target and the substrate, and from the materials, only the material emitted in a predetermined direction is selected to control the property of the film deposited on the substrate. By locating a filter between the target and the substrate to open for a predetermined period of time, only the material emitted at a predetermined velocity can be selected. Further, by applying a predetermined d.c.

Abstract: The present invention discloses methods and apparatus for depositing thin films of complex (compound) materials, including ferroelectrics, superconductors, and materials with high dielectric constants through a technique which is hereby entitled photo-enhanced chemical vapor deposition and activation (PECVDA). The technique involves the use of multiple heating sources including a resistive heat bias heater, a tuned optical source (UV or laser) and a source (halogen lamps or microwave sources) for applying high energy, rapid thermal pulses in a precise time sequence.

Abstract: A process and apparatus are disclosed for providing antistatic protection to a plastic lens, the apparatus being adapted to carry out the process and comprising:(A) deionizing means for providing a flow of ionized air to at least a major surface of the lens;(B) an airless spray system for applying a thin, substantially uniform coating of liquid antistatic material onto the lens surface following its deionization.A decay chamber may be provided for at least partially isolating the lens from airborne contaminants as the antistatic material dries.

Abstract: Anisotropic etching can be obtained in the direction of the incident heated beam of reactive gas with the introduction of a second material for controlling reactivity.

Abstract: A device and method for enhancing adhesion between an embedded filler component and surrounding thermoplastic matrix which together form a composite material. The filler component is subjected to plasma discharge and subsequently maintained in an inert environment to protect the treated surface area against premature exposure to reactive substances. While maintained in this inert environment, the treated surface is coated with a thermoplastic polymer and solidified. This coated filler is then capable of processing into composite materials. The device comprises an enclosure which is adapted which includes a containment space and environment control for maintaining inert conditions during application of plasma discharge and coating with thermoplastic polymer.

Abstract: A method of preventing particulates from depositing onto a wafer during all periods that processing is not taking place including during all periods of wafer transfer into or out of a plasma reactor chamber. During all periods in which a wafer is within the reactor chamber, but is not being processed, a nonreactive auxiliary plasma is produced in the reactor chamber. This plasma charges the particulates and produces just above the surface of the wafer an electric field that repels the particulates from the wafer.

Abstract: An improved semiconductor wafer transfer method and system incorporates a combination of wafer retractor (14) and wafer lifters (16) built into each processing chamber with a modified transport arm (12) to achieve large enhancements in wafer exchange speeds. The transport arm (12) brings a new wafer into a processing chamber (18) where an already processed wafer waits for retrieval, having been lifted into the central portion of the chamber by lifters (16). In a simultaneous action, lifters (16) lower the processed wafer onto a lower platform of the transport arm (12) while the wafer retractor (14) removes the new wafer from an upper platform of the transport arm (12). Once the transport arm (12) removes the processed wafer from the chamber (18), the retractor (14) lowers the new wafer onto the wafer lifters (16) and processing begins.

Abstract: Drawn optical fiber is provided with at least one layer of a coating material. The coating material typically is a UV curable material and provides the optical fiber with mechanical and environmental protection. It has been found that the temperature at which the optical fiber is cured has a pronounced effect on the modulus of the cured coating material. In order to provide a coated optical fiber of which the coating material has a desired modulus, the temperature of the coating material during cure is controlled by controlling the amount of energy of infrared wavelength which impinges on the coating material.

Abstract: The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).

Abstract: An arrangement for galvanization of treatment goods, such as for example electronic printed circuits, comprises a plurality of successively arranged baths accommodated in bath container units having open sides, covers for selectively covering the upper sides of the container units, units for aspirating vapors located in the bath containers above a liquid level of a bath liquid, units for introducing and withdrawing treatment goods into and out of the bath. The aspirating units include air aspiration inlets located at such a distance under an upper edge of the container units that whirling of an aspirated air is substantially eliminated and a substantial part of the vapors in a space above the liquid level is entrained by the aspirated air. The aspirating inlets are arranged above a maximum bath height, and the cover being arranged at such a height and being dimensioned relative to the container units so that an air passage is produced between the cover and the container unit.

Abstract: A Penning type plasma discharge is formed in an inert gas between a cathode and anode. A carbon source such as graphite is heated to vaporization temperature, and vaporized carbon atoms caused to flow therefrom into the plasma where they are ionized. The inert gas supply is then removed, and the plasma discharge is sustained by the carbon vapor. A substrate is mounted adjacent to, and at the same electrical potential as, the cathode. With the potential of the plasma being maintained at approximately 70 to 100V relative to the substrate, carbon ions are attracted to and deposited on the substrate to form a diamond layer. The initial inert gas plasma discharge may be used to sputter-clean the surface of the substrate prior to diamond deposition. A dopant or other additive material may be injected into the carbon plasma, thereby enabling the fabrication of microelectric or other devices in the diamond layer.

Abstract: A laser vapor deposition apparatus includes a vacuum chamber which includes an exhaust port and in which a material to be vaporized and a substrate are enclosed, a laser beam source for irradiating the material to be vaporized with a laser beam so as to deposit from the material a desired compound onto the substrate, and a gas supply source which supplies to the surface of the material, a gas that can prevent changes in property of the material which could be caused by the laser beam irradiation.

Abstract: A rotating cylindrical target has material ablated therefrom by a laser beam trained to contact the surface along a line parallel to the rotation axis, thereby avoiding problems of crater formation which arise with disc-shaped targets.

Abstract: An extrusion is coated with a resin by passing the extrusion continuously through a belt-shaped plasma formed by means of a stationary annular electron cyclotron resonance magnet which completely surrounds the extrusion. The resin coating is produced by plasma polymerization of a monomer using microwaves having a frequency of 2.45 GHz.

Abstract: A housing forming an internal powdering chamber in which an article support tray is removably supported. A hopper located on the exterior top of the housing is structured to dispense a metered amount of powder onto a powder distributor and sifting screen located in the top interior of the housing. An electric motor powering a wheel with an eccentrically connected actuator arm and linkage are connected to the powder distributor and sifting screen in order to supply an oscillatory movement thereto. The powder distributor also includes powered shuttered apertures to allow the powder to be distributed evenly on the powder distributor before being opened to allow the powder onto the sifting screen. The powder distributor and sifting screen are structured to evenly distribute a fine coating of powder vertically downward toward the article support tray. Power actuated lifting arms are located one on each interior corner of the housing slightly below the article support tray.

Abstract: A process for permanently attaching smooth finished globules of coating material to the ends of the teeth of molded plastic combs, picks, lifts and the like, including roughening or oxidizing the teeth ends to remove the gloss finish and form a more adherent surface; dipping the roughened teeth ends into a bath of liquid coating material to attach a globule of coating material to each tooth end and cover the sharp mold-parting line located thereat; and drying the globules attached to the teeth ends.

Abstract: An apparatus for producing semiconductor devices. A first automatic carrying system operates for taking from a lead frame tray a lead frame which mounts thereon semiconductor chips and for setting the lead frame on the suscepter. A thin film forming device operates for forming an insulating film on a surface of the lead frame disposed on the suscepter. A second automatic carrying system operates for taking from the suscepter the lead frame formed with the insulating film and for setting the lead frame into another lead frame tray. A transferring device operates for transferring the lead frame disposed on the suscepter from the first automatic carrying system through the thin film forming device to the second automatic carrying system.

Abstract: A method and apparatus are disclosed for removing one or more materials deposited on the backside and end edges of a semiconductor wafer which comprises urging the front side of the wafer against a faceplate in a vacuum chamber; flowing one or more gases through a space maintained between the front side of the wafer and the faceplate; and forming a plasma in a gap maintained between the backside of the wafer and susceptor to remove materials deposited on the backside and end edge of the wafer; the gas flowing through the space between the front side of the wafer and the faceplate acting to prevent the plasma from removing materials on the front side of the wafer.

Abstract: Apparatus for impregnating a liquid such as a resinous liquid into wood, in which timbers to be subjected to the impregnation are placed in a pressure tank which is capable of reducing or increasing the interior pressure thereof; the inside of the pressure tank is evacuated through a monitoring timber identical in properties with the timbers to be subjected to the impregnation, to expel the air present in the tank and the timbers; the liquid is injected into the pressure tank under pressurized conditions, while continuing the evacuation, to impregnate the liquid into the timbers; and the impregnation is completed when the liquid begins to flow out of the tank through the monitoring timber.

Abstract: An apparatus and a method for forming a three-dimensional article with photosetting or thermosetting material on the basis of a three-dimensional information on the article by means of an ink jet method. The material is jetted from at least one ink jet head to a stage and laminated thereon. The laminated material is exposed to light by a light source to be cured. In this process, a jetting direction of the material from the ink jet head to the stage and/or a jetting amount of the material jetted from the ink jet head is changed in accordance with the information by a control unit, thereby forming a solid article having a desired three-dimensional shape.

Abstract: A triode plasma reactor having first, second and third electrodes for forming a plasma in a reaction chamber from a reactant gas includes a phase modulated potential generator for generating time varying potentials on the second and third electrodes which are phase modulated versions of one another. The phase modulated versions may also include a fixed phase shift between them. By time varying the phase angle relative to a set phase shift, a new dimension of time varying control for the reactor may be obtained. Phase modulation at frequencies from audio frequencies to radio frequencies may be provided. Phase modulation may be accomplished digitally or in the analogue domain.

Abstract: An apparatus includes a first tray slidably received within a second tray, wherein the first tray and the second tray each are formed with a planar floor and upstanding flanges orthogonally and coextensively mounted to spaced parallel edges of each floor. Each floor includes an enclosed longitudinally aligned slot, wherein the slots overlie each other when the first shield is slidably received within the second shield to fixedly position the first shield relative to the second shield in an adjustable manner. Each shield includes at its forward end a first and second "U" shaped recess, the recesses aligned relative to one another to complementarily receive door framework contours of opposed door frames to provide a shield overlying an interface between room portions directed through a portal.

Abstract: A substrate cleaning device comprises a gas jet nozzle for jetting gas toward a substrate, an electron beam irradiation selection for irradiating electron beams into the jetted gas to induce glow discharge, and an ion acceleration section for drawing ions out of the glow discharge to impart the ions with energy, causing the ions to uniformly bombard onto the substrate.

Abstract: The invention provides a method for making a new semiconductor base material comprising thin layers of amorphous, hydrogenous carbon (a-c:H) with a specific electrical resistance of between 10.sup.1 and 10.sup.8 .OMEGA..cm and a charge carrier concentration (n+p) of between 10.sup.10 and 10.sup.18 cm.sup.-3, respectively at room temperature. The new semiconductor base material can be manufactured in thin layer technology with the application of band processes and exhibits a charge carrier mobility of at least 1 cm.sup.2.v.sup.-1.s.sup.-1.

Abstract: Apparatus for gas-metal arc deposition of metal, metal alloys, and metal matrix composites. The apparatus contains an arc chamber for confining a D.C. electrical arc discharge, the arc chamber containing an outlet orifice in fluid communication with a deposition chamber having a deposition opening in alignment with the orifice for depositing metal droplets on a coatable substrate. Metal wire is passed continuously into the arc chamber in alignment with the orifice. Electric arcing between the metal wire anode and the orifice cathode produces droplets of molten metal from the wire which pass through the orifice and into the deposition chamber for coating a substrate exposed at the deposition opening.

Abstract: A rotating cylindrical target surface is provided for the laser ablation process of depositing thin films on a substrate. The target is mounted in a vacuum chamber so that it may be rotated about the longitudinal axis of the cylindrical surface target and simultaneously translated along the longitudinal axis. A laser beam is focused by a cylindrical lens onto the target surface along a line that is at an angle with respect to the longitudinal axis to spread the plume of ablated material over a greater radial arc. The plume may be spread in the longitudinal direction by providing a concave or convex lateral target surface. The angle of incidence of the focused laser beam may be other than normal to the target surface to provide a more glancing geometry. Simultaneous roation about and translation along the longitudinal axis produce a smooth and even ablation of the entire cylindrical target surface and a steady evaporation plume.

Abstract: A method and apparatus for ultrarapid cooling of tissue samples against a chilled cryogenic surface. The cryogenic surface is enclosed in a high vacuum chamber during cooling of the cryogenic surface. Dry non-condensable room temperature gas is introduced from an external source to raise the chamber pressure just prior to slamming or plunging a sample against the cryogenic surface. The cryogenic surface is heated for regeneration or cleaning purposes between each successive sample.

Abstract: A painting structure for use as, by way of example, a paint spray booth or paint baking or drying oven, utilizes a trapezoidal cross-section, instead of the conventional rectangular/square or rectangular-gabled cross-section. The painting structure of the present invention provides inherent rigidity without the need for special framing, and provides more uniform air flow than a gabled roof structure, as air swirls in air pockets beneath the gables are eliminated. Due to the simplified construction, the trapezoidal cross-sectional booth of the present invention is less expensive to make and install and more easily erected.

Abstract: An improved apparatus for the formation of a functional deposited film using a microwave plasma chemical vapor deposition process characterized in that a microwave transmissible dielectric material is used for the microwave introducing window, and the window has a structure wherein the dielectric material is divided into blocks of the same or different dielectric materials having a specific inductive capacity of more than 1.0. In this way it is possible to adjust not only the resonant frequency characteristics but also the electromagnetic resonant mode of the window to resonate with the microwave oscillation frequency so as to enhance microwave transmission.

Abstract: A CVD apparatus in which a reaction chamber includes a pair of electrodes which define a plasma generating space therebetween. A metallic enclosure surrounds the plasma generating space thereby preventing plasma which has been produced within the space from escaping. The enclosure can be utilized to support one or more substrates to be coated.

Abstract: A plasma processing apparatus includes a vacuum vessel defining a discharge chamber is provided at least a source gas supply for supplying a processing gas into the discharge chamber a magnetic field creating device, a microwave introducing device. The microwave introducing device employs a microwave radiating member having the shape of a flat plate and provided with a cut. The plasma processing apparatus is capable of uniformly processing a work with a plasma and efficiently applying a microwave only to the work. The periphery of a microwave transmission window is tapered, so that the microwave transmission window can be attached adhesively and hermetically to a microwave launcher in a simple construction, whereby the reliability of the adhesive attachment of the microwave transmission window to the microwave launcher is enhanced.

Abstract: A system for monitoring and controlling the rate of growth of thin films in an atmosphere of reactant gases measures the UV absorbance of the atmosphere and calculates the partial pressure of the gases. The flow of reactant gases is controlled in response to the partial pressure.

Abstract: A high speed process for forming a multi layered thin film structure in a vacuum wherein each film is less than about four microns thick and the total layers can reach upwards to 4,000 or more. The polymeric layers are formed of a cross linked component selected from the group consisting of polyfunctional acrylates and mixtures of polyfunctional acrylates and monocrylates with the component having a preferable molecular weight of between 200 and 300 and a vapor pressure preferably in excess of 1.times.10.sup.-2 Torr. The polymeric layers may be interleaved with metal layers.

Abstract: A method and an apparatus enable the application of a flux material onto a geometrically defined joint to be soldered.The flux material is first ultrasonically atomized in a pressureless or almost pressureless manner. Thereafter, the flux material mist is transported and applied to the joint to be soldered by a directed air stream.

Abstract: A plasma processing apparatus includes a vacuum vessel defining a discharge chamber and is provided at least with a source gas supply for supplying a processing gas into the discharge chamber, a magnetic field creating device, and a microwave introducing device. The microwave introducing device employs a microwave radiating member having the shape of a flat plate and provided with a cut. The plasma processing apparatus is capable of uniformly processing a work with a plasma and efficiently applying a microwave only to the work. The periphery of a microwave transmission window is tapered, so that the microwave transmission window can be attached, adhesively and hermetically, to a microwave launcher in a simple construction, whereby the reliability of the adhesive attachment of the microwave transmission window to the microwave launcher is enhanced.

Abstract: Synthetic diamond crystals and films are deposited on a pair of uniformly spaced apart facing plates made of silicon, molybdenum or boron in elemental, nitride or carbide form. The plates are suitably supported within a totally thermally insulated chamber where a pressure of about 10 torr or less is maintained in the form of an atmosphere which includes a carbon source and a major portion of hydrogen, and preferably includes oxygen in equal amount to the carbon. By supplying sufficient microwave power to create a plasma and a uniform temperature of about 950.degree. C. at the plate surfaces, diamond crystals economically grow on the surfaces of the facing plates. Preferably, either the plates or the backing sections thereof have a relatively high thermal conductivity so as to maintain a uniform temperature across the entire plate surface areas.

Abstract: A system for plasma etching predetermined portions of material on the major surfaces of a plurality of substrates. The system comprises a plasma reactor chamber, provision for continuously introducing a gas to be converted in a reactive species by an electrical field, provision for forcing the gas through one or more through holes in the substrates, provision for continuously exhausting gas, an automatic transport or drive mechanism connected to the chamber and to the substrates to facilitate the advancement of substrates seriatim along a predetermined path in the chamber, and a vacuum lock connected to the chamber for maintaining a substantially constant atmosphere in the chamber while each of the substrates is inserted into and removed from the chamber.

Abstract: A method and apparatus for selectively depositing a layer of material from a gas phase to produce a part comprising a plurality of deposited layers. The apparatus includes a computer controlling a directed energy beam, such as a laser, to direct the laser energy into a chamber substantially containing the gas phase to preferably produce photodecomposition or thermal decomposition of the gas phase and selectively deposit material within the boundaries of the desired cross-sectional regions of the part. For each cross section, the aim of the laser beam is scanned over a target area and the beam is switched on to deposit material within the boundaries of the cross-section. Each subsequent layer is joined to the immediately preceding layer to produce a part comprising a plurality of joined layers. In an alternate embodiment of the present invention, a gas phase is condensed on a surface and a laser beam is used to selectively evaporate, transform, activate or decompose material in each layer.

Abstract: A film forming method comprises the steps of placing a plurality of objects to be processed and supplying an etching gas in a reaction container, removing a natural oxidization originated film on an object to be processed placed in the reaction container under a heating condition by plasma etching, exhausting the etching gas after stopping supply of the etching gas so as to stop making of the plasma, and supplying a film forming gas in the reaction container without rendering the reaction container open to air so as to form a film on the objects.

Abstract: Vapor deposition of a thin film is accomplished by employing a pulsed laser to irradiate at least a region of a homogeneous stoichiometric complex material pellet with sufficient energy density to accomplish congruent evaporation of constituents of the material. The energy density is further at least sufficient to cause at least a predetermined portion, a central forward lobe, of the evaporant to have approximately the same stoichiometry as the irradiated material. A substrate is positioned to allow deposit thereon of that lobe portion of the evaporant as a thin film.

Abstract: A substrate is exposed to a gas of reactive material and an oxidizing gas. The oxidizing gas includes an ozone gas. A laser light beam is applied to the substrate through the reactive material gas and the oxidizing gas. The laser light beam activates the oxidizing gas. The activated oxidizing gas reacts with the reactive material gas to form an oxide deposited on the substrate.

Abstract: An apparatus and method for coating or layering a surface with a metal utilizing a metal vapor vacuum arc plasma source. The apparatus includes a trigger mechanism for actuating the metal vacuum vapor arc plasma source in a pulsed mode at a predetermined rate. The surface or substrate to be coated or layered is supported in position with the plasma source in a vacuum chamber. The surface is electrically biased for a selected period of time during the pulsed mode of operation of the plasma source. Both the pulsing of the metal vapor vacuum arc plasma source and the electrical biasing of the surface are synchronized for selected periods of time.

Abstract: This invention is directed to the fabrication of semiconductor devices, especially those comprising III-V and II-VI compound semiconductor materials, and involves Rapid Thermal Annealing (RTA) of semiconductor wafers, especially those implanted with a dopant(s). The invention is also concerned with a black-box implement used in combination with the RTA. The process includes enclosing a wafer to be annealed within a "black-box" comprising components of a black body material and subjecting the black box with the wafer therein to an RTA.

Abstract: A reaction chamber for performing a chemical vapor deposition process wherein the window through which the light must pass is prevented from becoming clouded. The chamber is divided by baffles into a reactant zone, a buffer zone, and a window zone, and the momentum flux densities of the gases flowing in the respective zones are about matched. Additionally, discontinuities are provided on the walls of the reactor to impede diffusion of the reactant gas towards the window.

Abstract: A plasma pinch system includes a fluid-jet pinch device for establishing a plasma source composed of a tenuous vapor preconditioning cloud surrounding a central narrow flowing fine stream of fluid under pressure. A discharge device is connected electrically to the fluid-jet pinch device for supplying an electrical flow through a portion of the fluid stream for establishing an incoherent light emitting plasma therealong. A method of using the plasma pinch system for manufacturing semiconductors, includes exposing a semiconductor wafer to the incoherent light emitted by the plasma for either annealing or etching purposes.

Abstract: In an apparatus for forming a deposited film on a substrate by the hybrid excitation chemical vapor deposition method, said apparatus comprising a substantially enclosed reaction vessel having means for holding said substrate thereon, a plasma generating means and means for irradiating light through a light introducing window provided with said reaction vessel to the surface of said substrate in said reaction vessel; the improvement that at least part of the circumferential side wall of said reaction vessel is hermetically constituted by an insulating member having an external cathode electrode member on the outer surface thereof, said external cathode electrode member being electrically connected to a high frequency power source, an internal electrode member to serve as the anode is installed in said reaction vessel at a position opposite to said external cathode electrode member, said internal electrode member being electrically grounded, said means for holding the substrate is positioned below said interna