Abstract: A substrate liquid processing apparatus configured to perform a heating control over a processing liquid on a substrate with high accuracy in a unit of zones is provided. The substrate liquid processing apparatus includes a substrate holder configured to hold the substrate; a processing liquid supply configured to supply the processing liquid onto a processing surface of the substrate; and a heating unit configured to heat the processing liquid on the processing surface. The heating unit includes a heater, and a first sheet-shaped body and a second sheet-shaped body which are disposed to face the heater therebetween. The heater includes multiple heating elements provided in multiple heating zones of the heating unit.

Abstract: In a substrate processing apparatus, neutralization processing is performed on a substrate by a neutralization device provided in a thermal processing section. In the neutralization device, at least one of a holder that holds the substrate and an emitter that emits vacuum ultraviolet rays is moved relative to another one in one direction. At this time, one surface of the substrate is irradiated with the vacuum ultraviolet rays emitted by the emitter. When the entire one surface of the substrate is irradiated with the vacuum ultraviolet rays, the neutralization processing ends. Thereafter, the substrate on which the neutralization processing has been performed is transported to a coating processing unit in a coating processing section. In the coating processing unit, a film of a processing liquid is formed on the one surface of the substrate on which the neutralization processing has been performed.

Abstract: Embodiments described herein generally relate to methods for controlling a processing system. Particularly, subfab components of the processing system may be controlled based on the flow of materials into the processing system. In some embodiments, the flow of an inert gas used to dilute the effluent gases may be controlled in accordance with the flow of one or more precursor gases. Thus, the cost of running the processing system is reduced while mitigating critical EHS concerns.

Abstract: An apparatus and a method for dispensing a viscous adhesive for attaching a semiconductor die onto a substrate are provided, where the method comprises the steps of dispensing a volume of viscous adhesive from a nozzle onto the substrate and moving the nozzle away from the substrate such that an adhesive tail is formed between the nozzle and the volume of viscous adhesive. The method further comprises the steps of capturing multiple images of the adhesive tail with an imaging device as the nozzle is moving away from the substrate with an imaging device; and thereafter detecting with the imaging device an instant when the adhesive tail breaks from the volume of viscous adhesive.

Abstract: A plasma generating arrangement includes a plurality of plasma sources, each plasma source including a respective antenna coil assembly electrically coupled to a common electrical terminal via a respective transmission line. Each transmission line is configured to communicate a radio frequency electrical power signal from the common electrical terminal to the respective antenna coil assembly, and has a length which is an odd multiple of ¼ of the wavelength of the radio frequency electrical power signal.

Abstract: A rotatable sputtering target has a target material, a back tube and a joint piece. The joint piece is disposed between the target material and the back tube. The joint piece has a compressible structure and an electrically and thermally conductive adhesive. Particularly, the compressible structure being a compressible blanket or a compressible sheet has multiple through holes and thus the electrically and thermally conductive adhesive is filled in the through holes and then directly formed between the target material and the back tube. Using the joint piece to joint the target material and the back tube not only maintains the joint strength but also elevates the tolerable power of the rotatable sputtering target, which can increase the sputtering efficiency.

Abstract: The disclosure encompasses systems and methods for performing high temperature and high humidity curing of tablets using air flow delivered from a recirculating air handler to a pan coater of a tablet coating device. The recirculating air handler may be integrated into a preexisting tablet coating device so that the air flow may be delivered by the preexisting air handler or by the recirculating air handler as desired.

Abstract: A temperature controlling apparatus includes a platen, a fluid source that supplies a fluid, a first conduit, a second conduit, and a plurality of outlet thermal sensors. The first conduit includes a first inlet, a first outlet, and a first heater configured to heat the fluid to a first heating temperature. The fluid having the first heating temperature is dispensed on the platen through the first outlet. The second conduit includes a second inlet, a second outlet and a second heater configured to heat the fluid to a second heating temperature different from the first heating temperature. The fluid having the second heating temperature is dispensed on the platen through the second outlet. The outlet thermal sensors are disposed at the first outlet and the second outlet to sense temperature of the fluid dispensed from the first outlet and the second outlet respectively.

Abstract: The present disclosure provides an apparatus for dispensing liquid material, including a dispensing arm, a wafer holder against the dispensing arm, a first nozzle on the dispensing arm, a first distance laterally spacing the first nozzle and a center of the wafer holder, and a first height vertically spacing the first nozzle and a surface of the wafer holder, and a second nozzle on the dispensing arm, a second distance laterally spacing the second nozzle and the center of the wafer holder, and a second height vertically spacing the second nozzle and the surface of the wafer holder, wherein the second distance is greater than the first distance, and the first height is greater than the second height.

Abstract: A first device is provided. The device includes a print head. The print head further includes a first nozzle hermetically sealed to a first source of gas. The first nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the first nozzle. At a distance from the aperture into the first nozzle that is 5 times the smallest dimension of the aperture of the first nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the first nozzle.

Abstract: Provided are a device packing facility and method using DEHT and a device processing apparatus utilizing the DEHT. The device packaging facility includes a mounting unit providing bis(2-ethylhexyl) terephthalate (DEHT) between first and second devices to attach the first and second devices to each other, a processing unit thermally processing the first and second devices that are attached to each other to remove the DEHT and fix the first and second devices to each other, and a transfer unit transferring the first and second devices that are attached to each other from the mounting unit to the processing unit.

Abstract: An electronic device manufacturing system includes a motion control system for calibrating a gap between surfaces of process chamber or loadlock components by moving those component surfaces into direct contact with each other. The component surfaces may include a surface of a substrate and/or a substrate support and a surface of process delivery apparatus, which may be, e.g., a pattern mask and/or a plasma or gas distribution assembly. The motion control system may include a motion controller, a software program executable by the motion controller, a network, one or more actuator drivers, a software program executable by the one or more actuator drivers, one or more actuators, and one or more feedback devices. Methods of calibrating a gap via direct contact of process chamber or loadlock component surfaces are also provided, as are other aspects.

Abstract: A showerhead for a substrate processing chamber includes: inner walls; an inner plenum between the inner walls; and a faceplate having a first surface and a second surface that is opposite the first surface. Holes through the faceplate extend from the first surface to the second surface. A first inlet is fluidly connected to the inner plenum. A first outer plenum is between the inner walls and outer walls. A second outer plenum is between the inner walls and the outer walls. Coolant: fluidly connect the first outer plenum with the second outer plenum; are located within the faceplate between the first and second surfaces; and are fluidly isolated from the holes. The showerhead also includes a second inlet that is fluidly connected to the first outer plenum.

Abstract: Embodiments of the present disclosure are directed to a quick disconnect resistance temperature detector (RTD) heater assembly, that includes a first assembly comprising a pedestal, a pedestal shaft, an adapter, one or more heater power supply terminals, and at least one RTD, and a second assembly comprising a rotating module having a central opening, and a cable assembly partially disposed in the central opening and securely fastened to the rotating module, wherein the first assembly is removably coupled to the second assembly, wherein the cable assembly includes one or more power supply sockets that receive the heater power supply terminals when the first and second assemblies are coupled together, and wherein the cable assembly includes one or more spring loaded RTD pins that contact the at least one RTD disposed in the first assembly when the first and second assemblies are coupled together.

Abstract: There is provided a technique that includes a metal container including a process chamber configured to process a substrate, a substrate mounting plate rotatably installed in the container and having a plurality of substrate mounting surfaces circumferentially arranged at an upper surface thereof, a heater configured to heat the substrate mounted on each of the plurality of substrate mounting surfaces, a heat attenuator installed between the heater and the container, a gas supply part configured to supply a gas to the process chamber, and a support part configured to rotate the substrate mounting plate.

Abstract: An atmosphere of ammonia that absorbs infrared light in a wavelength band overlapping with the measurement wavelength band of a radiation thermometer is formed in a chamber in which a semiconductor wafer is thermally treated. A filter that selectively transmits infrared light having a wavelength not overlapping with the absorption wavelength band of ammonia is installed between an optical lens system and a detector of the radiation thermometer to avoid influence of the infrared light absorption by ammonia. A conversion table corresponding to the installed filter is selected from a plurality of conversion tables representing a correlation between energy of infrared light incident on the radiation thermometer and temperature of a black body, and is used at the radiation thermometer. Accordingly, the temperature of the semiconductor wafer can be accurately measured in the atmosphere of ammonia.

Abstract: An electronic device manufacturing system includes a motion control system for calibrating a gap between surfaces of process chamber or loadlock components by moving those component surfaces into direct contact with each other. The component surfaces may include a surface of a substrate and/or a substrate support and a surface of process delivery apparatus, which may be, e.g., a pattern mask and/or a plasma or gas distribution assembly. The motion control system may include a motion controller, a software program executable by the motion controller, a network, one or more actuator drivers, a software program executable by the one or more actuator drivers, one or more actuators, and one or more feedback devices. Methods of calibrating a gap via direct contact of process chamber or loadlock component surfaces are also provided, as are other aspects.

Abstract: A method of making a bulk heterojunction organic photovoltaic cell by glancing angle deposition. As the disclosed method relies on a trajectory of incident vapor flux that is not parallel to the substrate normal, micro and nano-scale columnar structures of thin films can be grown on the substrate. There is also disclosed a method of forming a donor-acceptor heterojunction by depositing at least one additional organic material over the columnar structures.

Abstract: An apparatus for processing a wafer includes a process chamber, a wafer support, a heat source, and a movable device. The wafer support is in the process chamber. The heat source is in the process chamber. The movable device contacts the heat source, in which the movable device is movable with respect to the wafer support.

Abstract: A method of applying protective sheeting of polymer material to a pipeline extending along a longitudinal axis and having a cutback bounded at opposite axial ends by two end portions of respective protective coatings of polymer material, the method including directly heating the free faces of the end portions; extruding and simultaneously winding about the pipeline a protective sheeting wide enough to cover the cutback and the end portions; and compressing the protective sheeting against the pipeline, the end portions included.

Abstract: A temperature of a component within the portable computing device (PCD) may be monitored along with a parameter associated with the temperature. The parameter associated with temperature may be an operating frequency, transmission power, or a data flow rate. It is determined if the temperature has exceeded a threshold value. If the temperature has exceeded the threshold value, then the temperature is compared with a temperature set point and a first error value is then calculated based on the comparison. Next, a first optimum value of the parameter is determined based on the first error value. If the temperature is below or equal to the threshold value, then a present value of the parameter is compared with a desired threshold for the parameter and a second error value is calculated based on the comparison. A second optimum value of the parameter may be determined based on the second error value.

Abstract: Described herein is a technique capable of improving the productivity of manufacturing of a semiconductor device in a method of processing a film by repeating different processes. A method of manufacturing a semiconductor device may include: (a) loading a substrate into a process vessel; (b) forming a first layer by supplying a first gas into the process vessel by a gas supply unit while maintaining the substrate at a first temperature by a temperature control unit; and (c) forming a second layer different from the first layer by supplying a second gas different from the first gas into the process vessel by the gas supply unit while maintaining the substrate at a second temperature different from the second temperature by the temperature control unit.

Abstract: A material detection system mountable to a ground vehicle. The material detection system includes a first range determination system (RDS) that includes a first electromagnetic radiation (EMR) emitter configured to emit first EMR behind the ground vehicle within a first field of view (FOV), a first EMR receiver that is configured to receive first EMR reflections, and a first RDS processing device configured to generate first RDS data that identifies distances to reflective surfaces based on the first EMR reflections. A processing device is coupled to the first range determination system and is configured to determine, based at least in part on the first RDS data, that material exists on the road. The processing device is also configured to determine a location of the material, and cause the location to be communicated to a computing device that maintains a map that identifies locations of material larger than a predetermined threshold.

Abstract: Carrier wafers are used to hold thin and ultra-thin substrates such as semiconductor components, for example. The carrier wafer of the invention has a plurality of electrodes insulated on all sides (floating electrodes). This plurality of floating electrodes, but at least 50 floating electrodes, are located next to one another with reference to the plane of the first surface of the carrier wafer. Each of these floating electrodes can be charged, for example by means of Fowler-Nordheim tunnels or by the injection of hot charge carriers, in particular of hot electrons or hot holes. Also provided are a method for holding a flexible substrate by means of a carrier wafer of this type and a method for the manufacture of a carrier wafer of this type.

Abstract: A deposition system which is configured to enable improved temperature uniformity of a heated substrate may include a susceptor provided in a chamber to hold a substrate, a reflection housing provided outside the chamber, a heating module including light sources provided in the reflection housing, and a reflection control module provided in the reflection housing between the heat sources and the chamber. The reflection control module may be configured to reflect light, which propagates along a first trajectory from the light sources toward a center region of the substrate, to propagate along a second trajectory toward an edge region of the substrate, thereby providing improved substrate irradiance uniformity and thus improved substrate temperature uniformity. Improved substrate temperature uniformity may result in improved thickness uniformity of layers provided on the substrate in a deposition process.

Abstract: The present invention relates to a support comprising: an electrically conductive biased table (10) connected to a high voltage power supply (12) and supported on an electrically insulating stand (40); an electrically insulating substrate carrier (20) in the form of a cylinder, its top face presenting a bearing plane designed to receive a substrate (50); legs (15) standing on the biased table (10) in order to support the bottom face of the substrate carrier (20); and at least one electrically conductive connection (201, 202, 203, 31, 30) for connecting the bearing plane to the biased table (10). The support is remarkable in that the substrate carrier (20) incorporates a heating resistance (26).

Abstract: A seed treater provides enhanced seed coating capabilities and performance. The seed and/or treatment fluid may be heated for improving vaporization and absorption by the seed. Air may be injected in the seed treater to provide heat, dehumidified air, and to provide vaporization enhancement, and component cleaning functions. The functions may be controlled by a control processor based on recipes and may be changed dependent upon sensed or input environmental conditions such as temperature and humidity.

Abstract: A method of annealing a thin film deposited on a substrate. According to the method, the thin film deposited on the substrate is provided. The provided thin film is irradiated with electromagnetic radiation until a predetermined crystal quality of the thin film is achieved. The spectral band of the electromagnetic radiation is selected such that the thin film is substantially absorptive to the electromagnetic radiation and the substrate is substantially transparent to the electromagnetic radiation.

Abstract: Embodiments of a capacitor assembly for coupling radio frequency (RF) and direct current (DC) power to an electrode and substrate support incorporating same are provided herein. In some embodiments, the capacitor assembly includes a first conductive plate to receive RF power from an RF power source, the first conductive plate including a central bore; at least one capacitor coupled to the first conductive plate and surrounding the central bore; and a second conductive plate electrically coupled to the first conductive plate via the at least one capacitor, the second conductive plate including an input tap to receive DC power from a DC power source and at least one output tap to couple the RF and DC power to an electrode.

Abstract: Disclosed is a coating apparatus including flow coating and roll-coating that may be used for uniform sol-gel coating of substrates such as glass, solar panels, windows or part of an electronic display. Also disclosed are methods for substrate preparation, flow coating and roll coating. Lastly, systems and methods for curing sol-gel coatings deposited onto the surface of glass substrates using high temperature air-knives, infrared emitters and direct heat applicators are disclosed.

Abstract: A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time-dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.

Abstract: The present disclosure provides apparatus and methods for monitoring and controlling filaments used in hotwire semiconductor processing and for monitoring integrity of filaments in a hotwire processing chamber. Embodiments of this disclosure may use real time voltage and current feedback signals provided by the power supply, known attributes, for example resistivity, of filament, filament geometries, for example diameter and length, and filament assembly configurations as input, to derive filament temperature in real time. Embodiments of the present disclosure are capable of continuously derive accurate temperatures of the filament assembly in a hotwire processing chamber after the filament assembly has changed geometries due to normal usage by using the measured cold resistance of the wire periodically before the process starts.

Abstract: Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.

Abstract: A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection members for connecting the mounting table and a base plate, which is provided in a space between the mounting table and the base plate. In the plasma processing apparatus, a space above the mounting table is set to be maintained under a vacuum atmosphere, and a space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere, and each collimator is fixed to the base plate at a position corresponding to each temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring windows by the temperature measuring unit.

Abstract: A transfer system according to an embodiment includes a robot and a determination unit. The robot includes robot hands that hold a workpiece in a thin plate shape and that are located at different heights. The determination unit determines the robot hands that hold the workpiece based on a combination of temperature of the workpiece to be held by each of the robot hands.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively.

Abstract: Provided is a temperature adjusting mechanism, which can keep deviation of a temperature of a portion in contact with the temperature adjusting mechanism to be small by controlling the temperature accurately at a high speed. A semiconductor manufacturing apparatus using such temperature adjusting mechanism is also provided. A cooling jacket (6) is provided with a cooling channel (61), and a heat lane (62). The heat lane (62) is provided with a heat receiving section (63), and a heat dissipating section (64), and seals a two-phase condensable working fluid (hereinafter referred to as the working liquid) in an annular narrow tube alternately folds back and forth therebetween. The heat dissipating section (64) is a portion to be cooled by the cooling channel (61), and the heat receiving section (63) is a portion having a temperature higher than that of the heat dissipating section (64).

Abstract: Disclosed are coating apparatus including flow coating and roll-coating that may be used for uniform sol-gel coating of substrates such as glass, solar panels, windows or part of an electronic display. Also disclosed are methods for substrate preparation, flow coating and roll coating. Lastly systems and methods for skin curing sol-gel coatings deposited onto the surface of glass substrates using a high temperature air-knife are disclosed.

Abstract: A disclosed film deposition apparatus includes a susceptor having in one surface a substrate receiving portion provided rotatably in a chamber; a heating unit including plural independently controllable heating portions, thereby heating the susceptor; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

Abstract: The present invention relates to a powder-coating apparatus for coating objects, comprising an application device which is designed to apply powder coating to regions of the object that are to be coated; and comprising an irradiation device which has at least one electromagnetic radiation source, which is designed to direct electromagnetic radiation onto areas of the object that are to be coated with powder coating and which is designed to thus cross-link the powder coating onto the coated regions. The present invention further relates to a powder-coating method for coating objects by means of a powder-coating apparatus according to the invention.

Abstract: Preferably, obtaining internal and external thermal measurement values of a sealed process chamber allows a control system to generate a control signal based on a comparison of the internal and external thermal measurement values to the predetermined value. The control signal is provided to a fluid handling system, wherein the fluid handling system modulates flow of a first fluid around the exterior of the sealed process chamber. The control signal is further provided to a closed loop heat exchange system, wherein the closed loop heat exchange system modulates flow of a second fluid within an interior cavity of the sealed process chamber based on the control signal. The control signal is still further provided to an open loop heat exchange system, wherein the open loop heat exchange system modulates flow of a third fluid within the interior of cavity of the sealed process chamber.

Abstract: Provided are an apparatus and a method for controlling the heating of the base within a chemical vapour deposition chamber, which apparatus is applicable to an MOCVD reaction chamber.

Abstract: A temperature controlled substrate support assembly used for processing a substrate in a vacuum chamber of a semiconductor processing apparatus. The substrate support assembly comprises a top plate for supporting the substrate. A base plate is disposed below the top plate wherein the base plate comprises a cavity in an upper surface of the base plate. A cover plate is disposed between the top plate and the base plate. At least one thermoelectric module is in the cavity in the upper surface of the base plate wherein the at least one thermoelectric module is in thermal contact with the top plate and the base plate, and the at least one thermoelectric module is maintained at atmospheric pressure.

Abstract: Described herein are methods and systems for the manufacture of composite articles, wherein a composite article is manufactured using a filamentary material and a liner, comprising: providing a material in heat transfer relation with the inner surface of said liner; applying uncured filamentary material to the outer surface of said liner; and heating a portion of said material in heat transfer relation with the inner surface of said liner, wherein heating said portion of said material effects cure of said composite article. Also in the methods and systems herein, a composite article is manufactured using a filamentary material wound on a liner, comprising, a material in heat transfer relation with the inner surface of said liner; heating means operable to heat a portion of said material in heat transfer relation with the inner surface of said liner, wherein heating said portion of said material effects cure of said composite vessel.

Abstract: A method and apparatus for the continuous powder coating of a non-conductive profile produced in a continuous forming process, such as pultrusion or extrusion, such that the profile is powder coated while on the profile forming machine and before the subject segment of the continuous profile is severed from the continuous profile on the forming machine (i.e. in-line).

Abstract: The invention relates to a method for equipping a process chamber in an apparatus for depositing at least one layer on a substrate held by a susceptor in the process chamber, process gases being introduced into the process chamber through a gas inlet element, in particular by means of a carrier gas, the process gases decomposing into decomposition products in the chamber, in particular on hot surfaces, the decomposition products comprising the components that form the layer. In order to improve the apparatus so that thick multi-layer structures can be deposited reproducibly in process steps that follow one another directly, it is proposed that a material is selected for the surface facing the process chamber at least of the wall of the process chamber that is opposite the susceptor, the optical reflectivity, optical absorptivity and optical transmissivity of which respectively correspond to those of the layer to be deposited during the layer growth.

Abstract: A dispensing apparatus includes a dispensing unit having a main body, a channel through the main body, and a plurality of nozzles connected to the main body, the plurality of nozzles being configured to dispense fluid flowing in the channel, a gap sensor unit configured to determine size of gaps between adjacent nozzles in the dispensing unit, and a thermal expansion adjusting unit configured to thermally expand or contract the main body of the dispensing unit to adjust the gap size between adjacent nozzles to a predetermined size, based on the gap size determined by the gap sensor unit.

Abstract: Exemplary coating devices and methods are disclosed. An exemplary coating device may include an atomizer for applying a spray jet of a coating means or material to a component, at least one directing air nozzle for outputting shaping or directing air in order to shape the spray jet, and a temperature-control device for controlling the temperature of the directing air. The coating device may further include a control unit which activates the temperature-control device as a function of at least one operating variable of the atomizer in order to set a predetermined directing air temperature.

Abstract: An observation window is provided for use with a spray booth during a spray coating process where the observation window is located in a position to permit an operator to observe the spray coating process. The observation window is controlled to provide light transmission in the window suitable for the specific spray process being performed. The control can be automatic or operator controlled. The window is adapted to have a different light transmission during different spray processes such as plasma spray and HVOF spray.

Abstract: An apparatus for depositing a coating on one or more parts (21) has: a chamber (22); a part holder (64) for carrying the part(s); a bias voltage source (94) coupled to the part(s) to apply a bias voltage to the part(s); a source (34) of the coating material; a plurality of temperature sensors (76); and a plurality of leads (90) passing outputs of the temperature sensors out from the chamber. A temperature monitoring system (150) has a temperature data processor (300). At least one fiber optic link (223) couples the temperature data processor to the temperature sensors so as to electrically isolate the temperature data processor from the bias voltage.