Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

Abstract: Silicon sintering method, without applying an external force, comprising placement of a silicon sample in a furnace, then heat treatment of this sample at, at least one temperature and at least one partial pressure of oxidising species to control the thickness of a silicon oxide layer on its surface.

Abstract: A system for monitoring a process inside a high temperature semiconductor process chamber by capturing images is disclosed. Images are captured through a borescope by a camera. The borescope is protected from high temperatures by a reflective sheath and an Infrared (IR) cut-off filter. Images can be viewed on a monitor and can be recorded by a video recording device. Images can also be processed by a machine vision system. The system can monitor the susceptor and a substrate on the susceptor and surrounding structures. Deviations from preferred geometries of the substrate and deviations from preferred positions of susceptor and the substrate can be detected. Actions based on the detections of deviations can be taken to improve the performance of the process. Illumination of a substrate by a laser for detecting deviations in substrate geometry and position is also disclosed.

Abstract: The present disclosure involves a method of fabricating a semiconductor device. The method includes providing a substrate having a material layer formed thereon; depositing a photoresist layer on the material layer, the photoresist layer having a vertical dimension; exposing a region of the photoresist layer to radiation, the exposed region having a horizontal dimension, wherein a first ratio of the vertical dimension to the horizontal dimension exceeds a predetermined ratio; and developing the photoresist layer to remove the exposed region at least in part through applying a developer solution containing a first chemical and a second chemical, wherein: the first chemical is configured to dissolve the exposed region of the photoresist layer through a chemical reaction; the second chemical is configured to enhance flow of the first chemical that comes into contact with the photoresist layer; and an optimized second ratio exists between the first chemical and the second chemical.

Abstract: A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.

Abstract: A device for heating a substrate with light from a flash lamp having a semiconductor switch connected in series to the flash lamp. After triggering of a trigger electrode of the flash lamp, a first drive signal and a second drive signal are output from a gate circuit. The time period when the semiconductor switch is on due to the second drive signal is longer than the time period that the semiconductor switch is on by the first drive signal. Then, the semiconductor switch is switched on and off by the first drive signal and the substrate temperature is increased to a temperature, which is lower than the desired temperature to be targeted, and is maintained a that temperature for a short time, after which the surface temperature of the substrate is increased to the desired target temperature.

Abstract: A disclosed plasma process apparatus is disclosed that applies a plasma process to an object to be processed, including a cylindrical processing container configured to be evacuatable to vacuum, a holding unit configured to hold plural objects to be processed and inserted into and to be extracted from the cylindrical processing container, a gas supplying unit configured to supply a gas into the processing container, an activating unit configured to be located along a longitudinal direction of the processing container and to activate the gas by plasma generated by a high frequency power, a cylindrical shield cover configured to surround a periphery of the processing container and to be connected to ground for shielding from high frequency, and a cooling device configured to cause the cooling gas to flow through a space between the cylindrical shield cover and the cylindrical processing container during the plasma process.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: Apparatus for controlling the temperature of a substrate support may include a first heat transfer loop and a second heat transfer loop. The first heat transfer loop may have a first bath with a first heat transfer fluid at a first temperature. The second heat transfer loop may have a second bath with a second heat transfer fluid at a second temperature. The first and second temperatures may be the same or different. First and second flow controllers may be provided for respectively providing the first and second heat transfer fluids to a substrate support. One or more return lines may couple one or more outlets of the substrate support to the first and second baths for returning the first and second heat transfer fluids to the first and second baths.

Abstract: The present invention provides a spin coater including a rotation table that rotatably holds the disc substrate, a spin-cup that surrounds the outer circumference of a disc substrate held on the rotation table, a dripping unit configured to drip an ultraviolet-curable resin composition onto the surface of the disc substrate, a rotating unit configured to rotate the disc substrate via the rotation table to spread the ultraviolet-curable resin composition over the surface of the disc substrate, a heating unit configured to heat the ultraviolet-curable resin composition on the disc substrate, and a temperature controlling unit configured to control a reaching temperature of the spin cup which is increased by the heating unit each time the ultraviolet-curable resin composition is spread, so as to be constant over multiple spin coating processes.

Abstract: The invention is an immobilization apparatus comprising: a container (1) having a nozzle (4) formed for exhausting a solution; a charging means (PS, 5, 4) for charging the sample solution within the container; and an airflow generating means for generating airflow (Af) crashing into the sample solution. The immobilization apparatus is configured to operate the charging means and the airflow generating means simultaneously, atomize the solution into microparticulate substances charged while maintaining its activity and functionality by the electrostatic force due to the charge of the sample solution charged by the charging means and the crash energy due to the crash of the airflow generated by the airflow generating means into the sample solution, and exhaust it from the exhaust outlet (4), and the charged microparticulate substances are deposited on a substrate (7) by the electrostatic force.

Abstract: The present invention is a method of developing a resist film on a substrate using a developing solution at a predetermined temperature lower than room temperature, including a first cooling step of mounting and cooling the substrate on a cooling plate at a temperature lower than room temperature and higher than the predetermined temperature in a cooling apparatus; a second cooling step of then carrying the substrate into a developing apparatus and supplying a rinse solution at the predetermined temperature or lower onto the substrate to cool the substrate in the developing apparatus; a developing step of then supplying the developing solution onto the substrate and developing the resist film on the substrate to form a resist pattern in the resist film; and a cleaning step of then supplying a rinse solution at the predetermined temperature onto the substrate to clean a front surface of the substrate.

Abstract: A substrate processing method in a processing chamber, has: accommodating a substrate into a processing chamber; and processing the substrate in the processing chamber on the basis of a correlation of a preset temperature of a heating device, a flow rate of fluid supplied by a cooling device and a temperature deviation between the center side of the substrate accommodated in the processing chamber and the outer peripheral side of the substrate while the substrate accommodated in the processing chamber is optically heated from an outer periphery side of the substrate at a corrected preset temperature by the heating device and the fluid is supplied to the outside of the processing chamber at the flow rate based on the correlation concerned to cool the outer peripheral side of the substrate by the cooling device.

Abstract: Preferably, a frame supporting a containment chamber, with a sealed process chamber confined within the containment chamber, and at least one fluid inlet structure in fluidic communication with an exterior of the sealed process chamber, the fluid inlet structure including at least a flow adjustment structure to control a fluid flow from a fluid source around the exterior of the sealed process chamber; and an open loop fluid convection system in fluidic communication with an interior of the sealed process chamber, wherein the fluid convection system includes a rotary compressor assembly that extends into the sealed process chamber is disclosed.

Abstract: Provided is a method in which a difference between a surface temperature of a susceptor and a surface temperature of a substrate is accurately grasped without using a complicated high-priced equipment. A temperature control method for a chemical vapor deposition apparatus includes detecting a rotation state of a susceptor on which a substrate is accumulated on a top surface thereof, measuring a temperature of the top surface of the susceptor, calculating a temperature distribution of the top surface of the susceptor, based on the detected rotation state and the measured temperature, and controlling the temperature of the top surface of the susceptor, based on the calculated temperature distribution.

Abstract: A device for heating a substrate with light from a flash lamp having a semiconductor switch connected in series to the flash lamp. After triggering of a trigger electrode of the flash lamp, a first drive signal and a second drive signal are output from a gate circuit. The time period when the semiconductor switch is on due to the second drive signal is longer than the time period that the semiconductor switch is on by the first drive signal. Then, the semiconductor switch is switched on and off by the first drive signal and the substrate temperature is increased to a temperature, which is lower than the desired temperature to be achieved, and is maintained a that temperature for a short time, after which the surface temperature of the substrate is increased to the desired target temperature.

Abstract: A substrate processing apparatus that can prevent formation of deposit in openings of a plurality of gas supply holes leading into a processing chamber. Each of the gas supply holes is configured to uniformly supply a processing gas, whose molecules are turned into clusters, into the processing chamber and to prevent liquefaction of processing gas when the processing gas is supplied into the processing chamber.

Abstract: A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which inductively heats the substrate supporting unit to thereby form a film from the film deposition gas on the substrate and which has been divided into regions; and a coil control unit which controls the coil region by region.

Abstract: A vehicle interior component fabricated using a hot melt adhesive having two base polymers with different melting points, a higher melting point and a lower melting point, for bonding the surfaces of at least two layers of the vehicle interior component. The hot melt adhesive is applied to one of the layers in an activated state at a temperature equal to or greater than the higher melting point and closely bonds with the layer when the adhesive cools to a temperature below the higher melting point. The bond between the two layers is effected at a lower temperature corresponding to the lower melting point to enable removal of the component layers from a mold while still in a warm state.

Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A substrate processing apparatus includes a processing chamber that forms a thin film on a main surface of a plurality of substrates and a heater provided outside of the processing chamber, for heating an inside of the processing chamber. The substrate processing apparatus also includes a first gas supply part configured to supply a first processing gas, a second gas supply part configured to supply the first processing gas to a middle part of a gas flow, a third gas supply part configured to supply a second processing gas, an exhaust part and a controller that causes the first processing gas and the second processing gas to react with each other in the processing chamber to form an amorphous material, and form a thin film of the plurality of substrates.

Abstract: A radiation curable ink initial line width control system includes a print head that deposits radiation curable ink to form as-deposited ink lines on a substrate. A substrate heating system heats the substrate to heat the ink and spread the ink to increase a line width of the ink. The line width of the ink is increased before the ink is contact-leveled at a contact-leveling nip. The substrate is heated to a temperature that minimizes or avoids showthrough and/or coalescence in a printed image.

Abstract: Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

Abstract: A batch type processing apparatus for simultaneously processing a plurality of target objects to be processed, includes a main chamber; a plurality of stages, arranged in the main chamber in a height direction of the main chamber, for mounting thereon the target objects; and a plurality of covers, provided to the stages, for covering the target objects mounted on the stages. The stages and the covers surround the target objects mounted on the stages, thereby forming small processing spaces each of which has a capacity smaller than a capacity of the main chamber.

Abstract: The invention relates to a CVD reactor having a plurality of rotary tables (2) supported on a rotationally driven susceptor (1) on dynamic gas cushions (3), wherein each gas cushion (3) is formed by an individually controlled gas flow and each gas flow, dependant on a surface temperature measured by a temperature measuring device (4), can be varied by an individual actuator (5). The invention further comprises a carrier (6), carrying the susceptor (1) and rotating with the susceptor (1). A common gas supply line (7) ending in the carrier (6) is key to the invention and provides the actuators (5) arranged on the carrier (6) with the gas that forms the gas flow.

Abstract: Various embodiments of methods and devices for coating stents are described herein.

Abstract: A vapor phase deposition apparatus 100 for forming a thin film comprising a chamber 1060, a piping unit 120 for supplying a source material of the thin film into the chamber 1060 in a gaseous condition, a vaporizer 202 for vaporizing the source material in a source material container 112 and supplying the vaporized gas in the piping unit 120 and a temperature control unit 180, is presented.

Abstract: There is described an apparatus (1) for coating a cylinder (C), in particular a wiping cylinder of an intaglio printing press, with a plastic composition comprising inter alia heating means (6) for applying radiant heat to the cylinder throughout its length as the cylinder is rotated, the heating means including a plurality of discrete heating elements (60) distributed along the length of the cylinder and around at least part of the peripheral surface of the cylinder, the heating elements being arranged at least in separate columns (60a to 6Oh) disposed parallel to one another along the length of the cylinder. The apparatus further comprises a temperature sensing system (9) for measuring the surface temperature of the cylinder along the length of the cylinder and a processing unit coupled to the temperature sensing system (9) for controlling operation of the heating elements (60) as a function of the measured surface temperature and a desired temperature setting (tc).

Abstract: Methods and apparatuses for vaporizing liquid precursor material for use in a vapor deposition process are disclosed. The method for vaporizing liquid precursor material includes introducing a flow of liquid precursor material into an expansion chamber and directing the flow of liquid precursor material towards a wall of the chamber. The wall of the chamber is heated to a temperature sufficient to vaporize a first portion of the flow of liquid precursor material while a second portion of the flow of liquid precursor material remains in a liquid state and a third portion of the liquid precursor material is formed into gel. The expansion chamber is continuously drained as the flow of liquid precursor material is introduced into the expansion chamber. The chamber is heated to a temperature to produce a sufficient amount of the second portion of the liquid precursor material to flush the gel from the chamber.

Abstract: The present invention provides a method that can maintain the temperature of a wafer at a process temperature before a coating process is performed by supplying a photoresist. According to the present invention, a thinner which helps a diffusion of the photoresist is supplied onto the wafer before the photoresist is supplied. The thinner is supplied in a temperature-controlled state such that the wafer has the process temperature by the thinner.

Abstract: An apparatus and method for one or more externally mounted temperature sensors in a substrate support utilized in a chemical vapor deposition (CVD) chamber is provided. In one embodiment, a substrate support for a vacuum chamber is provided. The substrate support comprises a body having a substrate receiving surface and an opposing bottom surface, a support stem coupled to and extending away from the bottom surface, one or more thermal control devices embedded within the body, at least one temperature sensor interfaced with the bottom surface of the body, and a removable hermitic enclosure fastened to the second side of the body and covering the at least one temperature sensor.

Abstract: The disclosure provides an apparatus for depositing a coating on one or more parts (21). The apparatus has: a chamber (22); a part holder (64) for carrying the part(s); a bias voltage source (94) coupled to the part(s) to apply a bias voltage to the part(s); a source (34) of the coating material; a plurality of temperature sensors (76); and a plurality of leads (90) passing outputs of the temperature sensors out from the chamber. A temperature monitoring system (150) has a temperature data processor (300). At least one fiber optic link (223) couples the temperature data processor to the temperature sensors so as to electrically isolate the temperature data processor from the bias voltage.

Abstract: A system for applying a metal particulate onto an object is disclosed herein. The system can include sources for a metal particulate and a hot pressurized air in communication with a spraying device having a nozzle assembly configured to: receive, mix, and expel the metal particulate and the hot pressurized air. The hot pressurized air can form a venturi effect within the nozzle assembly to draw in the metal particulate. The nozzle assembly can include a nozzle cap with a tapered nozzle having a helical channel, and an outer tip connected to the nozzle cap having a venturi effect chamber, a mixing conduit, and rifling. The helical channel can form a vortex flow of the metal particulate, and the mixing conduit can form a vortex flow of the air metal mixture. A nozzle orifice can expel the air metal mixture to onto the object to form a coating thereon.

Abstract: A system and methods for heating substrates during high temperature processing is provided. The system uses multiple temperature inputs of the backside of a substrate carrier and known parameters within the processing chamber to estimate the temperature of substrates being processed on the substrate carrier. Temperature readings of the substrate carrier taken from above the processing volume may be used to correct any drift that may occur with respect to temperature readings taken from below the substrate carrier. Temperature readings of heat exchanging fluid flowing through a showerhead assembly may be used to estimate the temperature of the surface of the showerhead, which may be used in the estimation of the temperature of the substrates being processed. The system then uses the estimated temperature to control the amount of power supplied to a plurality of heat sources configured to heat the substrates from below the substrate carrier.

Abstract: A system is provided for heating or cooling discrete, linearly conveyed substrates having a gap between a trailing edge of a first substrate and a leading edge of a following substrate in a conveyance direction. The system includes a chamber, and a conveyor operably configured within the chamber to move the substrates through at a conveyance rate. A plurality of individually controlled temperature control units, for example heating or cooling units, are disposed linearly within the chamber along the conveyance direction. A controller is in communication with the temperature control units and is configured to cycle output of the temperature control units from a steady-state temperature output as a function of the spatial position of the conveyed substrates within the chamber relative to the temperature control units so as to decrease temperature variances in the substrates caused by movement of the substrates through the chamber.

Abstract: An exemplary adhesive dispenser includes a container configured for supplying an adhesive, a plurality of nozzles configured for dispensing the adhesive, and a temperature controller connected between the container and the nozzles. The temperature controller has a chamber defined therein, and the chamber is configured for accommodating the adhesive. The container and each nozzle communicate with the chamber respectively. The temperature controller is configured for maintaining the adhesive therein in a predetermined temperature.

Abstract: The proposed method of substance curing by radiation, received from the UV LEDs, the device designed to implement this method, and ink cured by radiation from UV LEDs.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal, which has a large number of gas-discharging holes, a gas-supplying mechanism that supplies a process gas into the chamber through the showerhead, and a showerhead-temperature controlling unit that controls a temperature of the showerhead.

Abstract: A film forming apparatus which forms a film on a substrate by utilizing a chemical solution, including: a correlation data creating unit which creates a correlation data that is related to the quality of a chemical solution, from data that is related to the properties of the chemical solution including at least one of data on storage temperature for the chemical solution to be loaded and data on pressure applied to the chemical solution to be loaded; and a determining unit which determines whether or not the chemical solution holds expected quality thereof on the bases of the correlation data.

Abstract: Methods and apparatus for measuring substrate uniformity is provided. The invention includes placing a substrate in a thermal processing chamber, rotating the substrate while the substrate is heated, measuring a temperature of the substrate at a plurality of radial locations as the substrate rotates, correlating each temperature measurement with a location on the substrate, and generating a temperature contour map for the substrate based on the correlated temperature measurements. Numerous other aspects are provided.

Abstract: An apparatus and method are provided for producing a plurality of products or processing a plurality of samples via dispensing. The apparatus and method provide real-time monitoring of the products/samples and can provide real-time control. The apparatus and method can monitor the liquid both before and after it has been added to a carrier substrate. The apparatus and method can provide monitoring of each product/sample that is processed.

Abstract: A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate.

Abstract: A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.

Abstract: The present invention relates to an apparatus for laser cladding of a curved surface comprising: (a) an elongated arm having first and second ends and defining a chamber through the arm from the first end to the second end; (b) a laser delivery source connected to a focusing lens mounted in a housing within an opening on the first end of the arm for delivering a laser beam through the chamber; (c) a delivery head mounted on the second end of the arm comprised of (i) an enclosure having an inlet for receiving the laser and an outlet for delivering the laser to the curved surface, (ii) a powder nozzle for delivering a cladding powder to an inner surface of the curved surface, and (iii) a reflective surface for reflecting the laser to exit through the outlet; (d) mounting means for rotating the curved surface for the cladding of the curved surface; and (e) indexing means for moving the arm substantially parallel to a longitudinal axis of the curved surface so as to clad the curved surface during the rotation of

Abstract: Described is a linear batch CVD system that includes a deposition chamber, one or more substrate carriers, gas injectors and a heating system. Each substrate carrier is disposed in the deposition chamber and has at least one receptacle configured to receive a substrate. The substrate carriers are configured to hold substrates in a linear configuration. Each gas injector includes a port configured to supply a gas in a uniform distribution across one or more of the substrates. The heating system includes at least one heating element and a heating control module for uniformly controlling a temperature of the substrates. The system is suitable for high volume CVD processing of substrates. The narrow width of the deposition chamber enables a uniform distribution of precursor gases across the substrates along the length of the reaction chamber and permits a greater number of substrates to be processed in comparison to conventional deposition chambers.

Abstract: A deposition system includes a vacuum reaction chamber with a substrate holder positioned in it. The substrate holder is for carrying a substrate therein. A sputtering apparatus is also positioned in the vacuum reaction chamber. The sputtering apparatus is configured to direct sputtered material towards the substrate to form a sputtered material region thereon. A plasma enhanced chemical vapor deposition (PECVD) apparatus is positioned in the vacuum reaction chamber. The PECVD apparatus is configured to deposit a PECVD material region thereon the substrate. The first PECVD apparatus includes a first PECVD electrode movable from a first position towards the substrate and a second position away from the substrate.

Abstract: A system of drying a surface of a substrate is provided. The system includes a rotary support for supporting a substrate; and an assembly comprising a first dispenser, a second dispenser, and a third dispenser, the assembly positioned above the surface of the substrate, the second and third dispensers positioned on the assembly adjacent to and in contact with one another and spaced from the first dispenser, the second dispenser having an opening that is larger than an opening of the third dispenser, and the second dispenser being located between the first and third dispensers; and means for translating the assembly generally parallel to the surface of the substrate.

Abstract: The problem regarding volatileness of a solvent in an EL forming material, which occurs in adopting printing, are solved. An EL layer is formed in a pixel portion of a light emitting device by printing. Upon formation of the EL layer, a printing chamber is pressurized to reach a pressure equal to or higher than the atmospheric pressure, and the printing chamber is filled with inert gas or set to a solvent atmosphere. Thus the difficulty in forming an EL layer by printing is eliminated.

Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus is a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes metrology ports with purge gas assemblies configured and positioned to deliver a purge gas to prevent deposition thereon. In one embodiment, the metrology port is configured to receive a temperature measurement device, and the purge gas assembly is a concentric tube configuration configured to prevent deposition on components of the temperature measurement device.