Abstract: A robotic pen includes a computer numerically controlled machine having a multiaxis stage for mounting a workpiece, and a cooperating elevator which translates relative thereto. A pen tip is rotatably mounted to the elevator. And, a dispenser is joined in flow communication with the pen tip for ejecting a stream of material atop the workpiece as the workpiece moves relative thereto for maintaining a substantially constant gap between said pen tip and the workpiece during relative movement therebetween.

Abstract: The invention concerns a contactless numerical printing machine for products of average fluidity, such as varnish, glue, and conducting or scratchable ink, onto a substrate of variable thickness and dimensions. The machine includes a special device for printing without contact by projection. The projected materials are materials of average fluidity or composed of large-dimension molecules. The process used includes an electro-acoustic device for control of the projection, and a multiplicity of projection nozzles, each controlled individually. The machine also includes a production chain with different work stations, whose printing devices are controlled by a computer management system. The production chain allows printing with a certain precision in given zones located during the processing by an appropriate work station.

Abstract: A spray device for coating a surface of a human body with a spray liquid, the spray device including at least one nozzle and at least one liquid container, wherein the at least one liquid container adapted to hold a volume of spray liquid substantially equal to an amount required to apply a single dosage of the spray liquid for coating a surface of a human body. The spray device further includes a liquid channel adapted to connect the at least one liquid container to the at least one nozzle, and a spray valve adapted to cause the spray liquid to flow from the at least one liquid container to the at least one nozzle using the liquid channel, the at least one nozzle producing a spray jet of the spray liquid. The spray device still further includes a control device adapted to control the operation of the spray device, and a sweeping device for sweeping the spray jet from the at least one nozzle to coat at least a portion of the human body.

Abstract: A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.

Abstract: A system and method for aligning prior patterning positions formed by a first SPM tip with a second SPM tip in combination with an SPM system includes identifying first location information that includes a location of the first SPM tip and a sample reference location on an SPM sample and storing the first location information in a storage area. After replacing the first SPM tip with the second SPM tip, second location information, which includes a location of the second SPM tip and the sample reference location on the SPM sample, is identified. Displacement is calculated between the location of the second SPM tip and the first SPM tip based on the first and second location information, and either the second SPM tip or a stage supporting the SPM sample is translated to align the second SPM tip with the location of the first SPM tip in accordance with the calculated displacement.

Abstract: A method for controlling a semiconductor manufacturing apparatus in a wait mode, including: obtaining information regarding a waiting time required for a product to arrive at the apparatus on a production line, the product being subjected to a predetermined process by the semiconductor manufacturing apparatus; obtaining information regarding a time required to control energy saving between lowering electric power and other energy used by the semiconductor manufacturing apparatus in the wait mode to a level at which the processing is not ready and raising the electric power and the other energy to a processable level at which the product processing is ready; and judging whether or not to execute the energy saving control of the semiconductor manufacturing apparatus based on results of comparison of the required time with the waiting time and of estimation on an effect of energy saving obtained by executing the energy saving control during the waiting time.

Abstract: A semiconductor manufacturing apparatus includes: a hot plate that heats an article to be processed; a temperature control section that controls temperature of the hot plate; a main body control section that controls the entirety of the apparatus based on a process recipe; and an elevating mechanism that elevates the article to be processed above the hot plate. The semiconductor manufacturing apparatus further includes: a storage section that stores temperature data of the hot plate; an elevation control section that controls the elevating mechanism and sends elevation timing data to the storage section; a management range calculation section that calculates a management range corresponding to parameter behavior in a transient gradient state based on the temperature data, process recipe data, and the elevation timing data; and an abnormality detection section that detects apparatus abnormality with the use of the management range calculated by the management range calculation section.

Abstract: A pressure-controlling dispersion delivery system for delivering a sheared dispersion comprising a plurality of ingredients to a coating device selected from a direct feed delivery system and a coating device flow-through delivery system, wherein a coating formed from a dispersion delivered through the pressure-controlling delivery system has a more consistent caliper than a coating formed from a similar sheared dispersion delivered to a coating device by means of a gear pump delivery system.

Abstract: A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas injection plenum formed by the gas injection system body and the consumable gas inject plate. The gas injection system is configured to receive a process gas from at least one mass flow controller and distribute the process gas to the processing region within the plasma processing device, and the pressure sensor is configured to measure a gas injection pressure within the gas injection plenum. A controller, coupled to the pressure sensor, is configured to receive a signal from the pressure sensor and to determine a state of the consumable gas inject plate based upon the signal.

Abstract: Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

Abstract: A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.

Abstract: This invention provides a coating apparatus and methods for coating a device, such as an industrially or medically applicable device. The apparatus is suitable for providing a coating using a photoactivatable compound and a polymerizable compound. In another aspect, the apparatus and methods are useful for coating a device wherein the surface of the device has small pores or apertures. The apparatus includes of containers suitable for holding the object to be coated and the coating solution, a gas supply source for supplying gas to solution, an irradiation station for providing light used in the coating process, and a conveyor mechanism to direct the containers to and from the irradiation station.

Abstract: A coating apparatus and method are disclosed in which even if poor coating occurs in a lower-layer, no poor coating occurs in an upper-layer formed on the lower-layer. A pre-wet liquid coating device is disposed between a first coating device at the upstream side of a support web conveying direction, and a second coating device disposed at the downstream side. When an uncoated portion is formed by the first coating device, a pre-wet liquid is coated by a pre-wet liquid coating device, and the coating liquid can be reliably coated by the second coating device. When the pre-wet liquid coating device is removed from the support web, first, the pre-wet liquid coating device is brought into liquid-running out state, and thereafter, removed from the support web. Accordingly, the pool of pre-wet liquid is eliminated and occurrence of a thickly coated portion on the support web can be prevented.

Abstract: A coated film forming method is capable of readily forming a coated film of a thermoplastic material on a coated region of an inner peripheral surface of a cylinder. A nozzle, through which a molten paste of a thermoplastic material kept molten is discharged, is disposed toward an inner peripheral surface of a cylinder. The nozzle is moved along a rotational central line of the cylinder while rotating the cylinder and discharging the molten paste from the nozzle. Centrifugal force acting on the cylinder being rotated leads to spreading of the molten paste applied to the inner peripheral surface of the cylinder. Viscosity of the molten paste, a rotational speed of the cylinder and a speed of movement of the nozzle are set so as to keep the molten paste discharged from the nozzle from being scattered to a region other than the coated region.

Abstract: A system comprising at least a multiaxial machine, each axis being equipped with motor means, provided with a sprayer and corresponding sensor and actuator, is provided. Said system comprises a means for supervising an installation including at least a computer provided with a display means and a means for inputting data; at least one programmable computer for managing the axes of the machine and the sprayer; a server for programming a spraying table; a first computer network connecting the server to the programmable computer for managing the machine and to the means for supervising the installation; and a second computer network connecting the programmable computers for managing the machine to the sensor and actuator of said machine.

Abstract: The invention relates to an apparatus and a method for producing a sprayed layer on the surface of a substrate, wherein an admixture material which may have started to melt or is molten, is guided onto the surface of the substrate to be coated using a gas or gas mixture, as well as a relevant installation for producing the sprayed layer by means of a thermal spraying method, wherein the installation comprises means for supplying the admixture material or the gas or gas mixture. According to the invention, at least one feature of the thermal spraying process which influences the quality of the sprayed layer and which is responsible for the formation of the layer and its properties, is recorded, evaluated and assessed, checked, monitored and/or regulated. Both analogue and digital spectroscopic arrangements can be used as optical emission spectroscopic arrangements.

Abstract: A method and apparatus for controlling a temperature of a microelectronic substrate. In one embodiment, the apparatus can include a substrate support configured to engage and support the microelectronic substrate. The apparatus can further include a temperature controller having one or more thermal links coupled directly with the substrate when the substrate is supported by the substrate support. The thermal links can maintain thermal contact with the substrate when the substrate is either stationary or mobile relative to the temperature controller. The temperature controller can heat or cool different portions of the substrate at different rates with one or more of several heat transfer devices, including liquid jets, gas jets, resistive electrical elements and/or thermoelectric elements.

Abstract: A data processing apparatus for a semiconductor manufacturing apparatus includes a semiconductor manufacturing apparatus for executing processing for a wafer, a data collecting semiconductor device for collecting processing data generated in association with the processing, and a data copying semiconductor device for extracting the processing data collected in the data collecting semiconductor device and for producing a copy of the processing data. The apparatus may include a data analyzer for analyzing the data copy produced by the data copying semiconductor device and for diagnosing a processing state of the processing apparatus.

Abstract: A reciprocating coating system for coating objects. The reciprocating coating system includes a computer controller for controlling the motion of a coating device, and to allow configuration of system parameters. Configurable parameters include stroke length, stroke center point and stroke speed.

Abstract: A focus ring is disposed along a circumference of a semiconductor substrate on a lower electrode. A sensor measures a position of an upper surface of the focus ring, and a drive mechanism 6 drives the focus ring vertically. A controller adjusts the position of the upper surface of the focus ring to a desired position by driving the drive mechanism on the basis of a result of measurement by the sensor.

Abstract: A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the present invention apparatus is a pulsing plasma source capable of either exciting or not-exciting a first precursor. The pulsing plasma source includes an energy source to generate a plasma, and a plasma adjusting system to cause the plasma to either excite or not-excite a precursor. The precursor could flow continuously (an aspect totally new to ALD), or intermittently (or pulsing, standard ALD operation process). The present invention further provides a method to deposit highly controlled layered film on a workpiece. The method comprises the steps of pulsing the plasma to excite/not-excite the precursors and the ambient to deposit and modify the depositing layers. This procedure then can be repeated alternately until the film reaches a desired thickness.

Abstract: An apparatus for forming at least one layer of substantially homogenous material on a substrate comprising: a processing chamber having a substrate support system on which is disposed a wafer; an energy source for providing thermal or a-thermal energy to the chamber; a source of reactants for the chamber; and a “smart controller” connected to the chamber for “real-time” control of the energy sources and the reactant sources. Additionally a method for forming at least one layer of substantially homogenous material layer on a substrate, comprising: in-situ cleaning of the substrate by selectively using appropriate amounts of thermal, sonic, optical and plasma energy while comparing actual surface topography of the substrate with an expected surface topography via said “smart controller”.

Abstract: Disclosed are an apparatus for and a process of atomic layer deposition using remote plasma. A thin film is deposited to a desired thickness on a wafer by use of the apparatus, which comprises a plurality of transfer pipes for individually transferring the first and the second reactive gas and the carrier gas to the vacuum chamber; an energy supplier, provided inside the transfer pipe for transferring the first and the second reactive gas, for supplying excitation energy to generate excited plasma to ionize the first reactive gas; and a valve controller, established in the transfer pipes, for alternately feeding into the vacuum chamber the second reactive gas and the first reactive gas ionized by the plasma excited in the energy supplier, at predetermined time intervals.

Abstract: A blast unit for sending air from the top of a processing chamber to the bottom thereof and an exhaust pipe for exhausting gas from the bottom of the processing chamber are provided. Concomitantly with a change in pressure in the processing chamber, intervals of a slit damper and/or the degree of opening of a damper is controlled by a controller and thus a blast amount or an exhaust amount is controlled, thereby maintaining the pressure in the processing chamber almost constant.

Abstract: In the chemical vapor deposition apparatus, a substrate stage for mounting a substrate is provided inside a reaction chamber of the apparatus. A source gas inlet for introducing a source gas and exhaust outlets and for exhausting the source gas are provided. Exhaust outlet valves provided for exhaust outlets are open and shut successively with time. The direction of the flow of source gas relative to the fixed substrate varies with time. The present chemical vapor deposition apparatus allows the improved evenness of film thickness, the composition ratio, and the like within the substrate surface as well as the reduction of particles of foreign substance generated inside the reaction chamber.

Abstract: A pizza sauce dispenser simultaneously dispenses and spreads a precisely controlled amount of sauce onto a pizza dough base without manually handling the sauce or the dough during operation. The dispenser includes a selectively rotatable disc and an arm that selectively extends over the disc. At lease one nozzle is supported by the arm and selectively dispenses the sauce onto the dough. A control mechanism controls: (1) a selected rate and direction of disc rotation; (2) a selected pivot rate and direction of the arm; and/or (3) a selected rate of dispensing sauce through the nozzle. In use, with pizza dough placed on the disc, the disc is rotated and the arm pivoted over the dough so that the nozzle traverses a path from the outside edge of the dough to the center of the dough or vice versa. Sauce thus is deposited in a spiral or other desirable pattern.

Abstract: To lower the electrical resistance of a p-type semiconductor or the operation voltage of a light-emitting/light-receiving semiconductor device. An ion-plasma-type electron-beam irradiation apparatus 100 generates wide-area-radiation electron beams. The thus-generated electron beams are radiated to the outside through a thin metallic plate 108 formed on the outer surface of a beam extraction window 107. A p-type semiconductor is disposed below the beam extraction window 107 such that the p-type semiconductor is disposed about 20 mm away from the electron extraction window so as to be almost parallel to the metallic plate 108. When the surface of the p-type semiconductor is irradiated with electron beams by use of this apparatus, the electrical resistance of the p-type semiconductor can be effectively lowered within a short period of time; i.e., within about three minutes, which is considerably shorter than the time required in the case where a conventional electron-beam irradiation apparatus is employed.

Abstract: An apparatus for manufacturing a lens with a predetermined prescription from a number of lens molds, a gasket, and a source of a fluid material. The apparatus includes a device for selecting a first lens mold and a second lens mold based upon the prescription, a device for positioning the lens molds within the gasket, a device for inserting an amount of the fluid material within the gasket and between the molds, a device for curing the fluid material so as to form the lens, and a device for advancing the lens molds along a predetermined path through the selecting device, the positioning device, the fill device, and the cure device.

Abstract: A process controller and method employing a machine vision system for automatically and continuously monitoring and controlling the processing of coated fasteners, and for separating the fasteners into three groups of “good”, “rejected” and “purge”/recyclable parts.

Abstract: In one illustrative embodiment, the method comprises providing a substrate having a process layer formed thereabove, performing a wet etching process comprised of a duration parameter on the process layer to reduce a thickness of the process layer, and adjusting the duration parameter of the wet etching process if the reduced thickness of the process layer after the etching process is complete is not within acceptable limits. In another illustrative embodiment, the present invention is directed to a system that is comprised of an etch tool for performing an etching process for a duration on a process layer formed above a semiconducting substrate to reduce a thickness of the process layer, and a controller for adjusting the duration of the etching process if the reduced thickness of the process layer after the etching process is performed is not within acceptable limits.

Abstract: A liquid crystal dispensing apparatus and a method of controlling a liquid crystal dropping amount are provided to drop liquid crystal onto a substrate corresponding to at least one unit panel area. In one aspect, the apparatus uses a liquid crystal dispensing unit to dispense liquid crystal. The liquid crystal dispensing unit includes a nozzle having a discharging hole through which the liquid crystal is dropped onto the substrate, a needle moveable between a down position in which the needle blocks the discharging hole and an up position in which the needle is separated from the discharging hole, a spring member to bias the needle toward the down position, and a solenoid coil to provide a magnetic force to move the needle to the up position. The dropping amount liquid crystal dispensing unit may be electrically controlled by controlling the solenoid coil or by controlling a gas pressure used to drive the liquid crystal through the discharging hole.

Abstract: An apparatus for depositing seed layers from a group of Cu, Ag or an alloy thereof on a substrate having narrow openings surrounded by a filed; the apparatus comprising a controller, said controller including instructions to deposit a conformal seed layer having a thickness of 50-500 Å oil the filed and to deposit a non-conformal seed layer having a thickness of 100-3000 Å on the filed and to stop depositing the seed layers prior to filling the narrow openings, such that the rermaining narrow openings are filled by electroplating. In accordance with the invention, substantially conformal and non-conformal seed layers me deposited in an apparatus where the conformal and non-conformal seed layer deposition steps can be carried out without breaking vacuum, or without exposing the wafer to the atmosphere between the deposition steps.

Abstract: A liquid crystal dispensing apparatus and a method of controlling a liquid crystal dropping amount are provided to drop liquid crystal onto a substrate corresponding to at least one unit panel area. In one aspect, the apparatus uses a liquid crystal dispensing unit to dispense liquid crystal. The liquid crystal dispensing unit includes a nozzle having a discharging hole through which the liquid crystal is dropped onto the substrate, a needle moveable between a down position in which the needle blocks the discharging hole and an up position in which the needle is separated from the discharging hole, a spring member to bias the needle toward the down position, and a solenoid coil to provide a magnetic force to move the needle to the up position. The dropping amount liquid crystal dispensing unit may be electrically controlled by controlling the solenoid coil or by controlling a gas pressure used to drive the liquid crystal through the discharging hole.

Abstract: The linear controlling of the pressure of a vacuum chamber, such as a plasma etch chamber used in semiconductor processing, is disclosed. A plasma etch chamber pressure control mechanism includes an aperture diaphragm and a number of aperture blades rotatably mounted on the aperture diaphragm. The diaphragm defines a contractible and expandable aperture for controlling the pressure of the chamber. Rotation of the aperture blades in a first direction contracts the aperture by causing movement of the blades towards the aperture, increasing the pressure of the chamber. Rotation of the aperture blades in a second direction opposite to the first direction expands the aperture by causing movement of the blades away from the aperture, decreasing the pressure of the chamber.

Abstract: A fluidized bed pyrolytic carbon coating apparatus (1) is provided for coating substrate surfaces with pyrolytic carbon. The preferred coating apparatus (1) includes a fluidized bed reactor (10) having a reactor chamber (22), a gas feed inlet (24), an exhaust gas outlet (26), a source (12) of process feed gas and a gas line (14) through which the process feed gas can pass from the source (12) of process feed gas to the gas feed inlet (24) and into the reactor chamber (22). The gas line (14) includes an actuator (20) having a timing circuit (37) which acts to vary a rate of flow of process feed gas through the gas line (14) into the reactor chamber (22) such that the rate of flow into the reactor chamber (22), cycles regularly and consistently over a period of time so as to create a pulsating gas flow and a pulsation effect upon the fluidized bed within the reactor chamber (22).

Abstract: A central controller for a powder coating system has a single processor connected to a memory, a gun controller input/output device and gun control logic for controlling a characteristic of a spray gun. An air flow controller input/output device and air flow control logic for controlling a characteristic of a pump providing air flow may also be included. A process input/output device for electrically communicating with a process input or a process output may also be included. Part identification and tracking logic, gun triggering logic, gun movement logic, booth control logic, part profiling logic and system monitoring and logging logic may also be included.

Abstract: A method and apparatus for processing a semiconductor wafer to reduce CD variation feeds back information gathered during inspection of the wafer to a previously visited processing tool and feeds forward information to adjust the next process the wafer will undergo. The inspection and processing are performed at a single processing module without exposing the wafer to ambient atmospheric conditions. Embodiments include removing a wafer from a wafer cassette, and measuring a dimension of a feature on the surface of the wafer, such as the feature's CD using an optical measuring tool. A process, such as an etch process, is then performed on the wafer using a set of process parameter values, such as an etch recipe, selected based on the CD measurement, and the wafer is returned to a cassette. The CD measurements are also linked to photolithography adjustable parameters such as stepper focus and exposure settings.

Abstract: An apparatus for finishing marine vessel surfaces including track-mounted robots, movable relative to the vessel being finished. The robots are controlled by a computer, with each robot having a plurality of tools attachable to the robots both for mapping the surface contours of the vessel and for painting or otherwise finishing the surface.

Abstract: A compliant marking tool for attachment to a fiber placement machine that is capable of marking detail locations on a work piece positioned on the fiber placement machine. The marking tool has a flexible member that is configured and adapted to bow and twist in response to the marking tool contacting the work piece. A holder is pivotably connected to the flexible member. A marking member is positioned in the holder and is capable of moving within the holder. The flexing of the flexible member along with the pivoting of the holder and the movement of the marking member allow the marking tool to follow the contours of the work piece and mark detail locations without damaging or at least minimizing the potential of damaging the work piece.

Abstract: Systems and methods for creating a combinatorial coating library including a coating system operatively coupled to at least one of a plurality of materials suitable for forming at least one coating layer on a surface of one or more substrates and a curing system operative to apply at least one of a plurality of curing environments to each of a plurality of regions associated with the at least one coating layer. The curing system including a scanning mirror system having a mirrored surface positionable relative to an incoming radiation beam, wherein the mirrored surface is positionable to direct the incoming radiation beam to a selected one of the plurality of regions associated with the coating layer. The combinatorial coating library comprising a predetermined combination of at least one of the plurality of materials and at least one of the plurality of curing environments associated with each of the plurality of regions.

Abstract: A remote control device that provides a wireless connection between the operator and a control console of a material coating spraying system, thereby allowing the operator to select, change, modify and otherwise control a variety of parameters and functions of the spraying operation. The remote capability permits an operator to be stationed at, in or near the spray booth so as to be able to observe the actual spraying operation and transmit instructions to the control console. In one embodiment, a powder spray system includes a spray gun having a pressurized air inlet and a powder inlet, a powder spray booth, a powder supply for feeding powder to the gun, a control console separately located with respect to the booth; the console being operable to control a spraying operation; and a hand-held remote control device for wireless operation of the control console by an operator positioned a distance from the console.

Abstract: Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.

Abstract: A substrate is held on a spin chuck, and resist solution is supplied to the surface of the substrate at a plurality of positions spaced at predetermined intervals from a plurality of resist nozzles provided the bottom surface of a resist pipe provided over a first direction across the surface of the substrate. Thereafter, the substrate is oscillated or rotated, thereby making the resist solution on the substrate a thin coating film with a uniform thickness. In the coating apparatus and method, which are excellent in responsiveness to a degree of viscosity of coating solution, various kinds of treatment agents with a wide range of viscosity can be used, and mechanical accuracy such as the space between the nozzles and the substrate, accuracy of the nozzle size, and the like can be loosened.

Abstract: Systems and methods for controlling, organizing, and viewing a plurality of electrostatic spray gun operating parameters from a centralized control panel are provided. In this regard, a master control panel is provided that can be shared by all the guns in the system. Each of the guns has an assigned gun control subpanel in the gun control area. Each subpanel includes a selector switch which can be used to monitor and control the gun associated with that subpanel on the master control panel. Each of the subpanels also has a limited display such as a bar graph which can be used to show the electrostatic performance of the guns. The subpanel displays are configured in a tight cluster so that the operator can easily simultaneously monitor the performance of all the guns in the system to identify any guns which are not performing properly.

Abstract: An apparatus for preparing a plastic eyeglass lens includes a coating unit and a lens curing unit. The apparatus is preferably configured to allow the operation of both the coating unit and the lens curing unit. The apparatus may also include a post-cure unit and a controller. The controller is configured to control the operation of the coating unit, the lens curing unit and the post-cure unit. The lens forming unit may include an LCD filter disposed between activating light sources and a mold assembly. The mold assembly preferably includes two mold members held together by a gasket. The gasket preferably includes four protrusions spaced at 90 degree intervals about the gasket. A lens forming composition may include a first photochromic compound, a second photochromic compound and a light effector. The light effector may alter the color of a lens when exposed to photochromic activating light, when compared to a lens formed from a lens forming composition which does not include a light effector.

Abstract: A method for controlling spacer width in a semiconductor device is provided. A substrate having a gate formed thereon is provided. An insulative layer is formed over at least a portion of the substrate. The insulative layer covers the gate. The thickness of the insulative layer is measured. A portion of the insulative layer to be removed is determined based on the measured thickness of the insulative layer. The portion of the insulative layer is removed to define a spacer on the gate. A processing line for forming a spacer on a gate disposed on a substrate includes a deposition tool, a thickness metrology tool, and automatic process controller, and a spacer etch tool. The deposition tool is adapted to form an insulative layer over at least a portion of the substrate. The insulative layer covers the gate. The thickness metrology tool is adapted to measure the thickness of the insulative layer.

Abstract: A silicon oxide film is deposited on a substrate by first introducing a process gas into a chamber. The process gas includes a gaseous source of silicon (such as silane), a gaseous source of fluorine (such as SiF4), a gaseous source of oxygen (such as nitrous oxide), and a gaseous source of nitrogen (such as N2). A plasma is formed from the process gas by applying a RF power component. Deposition is carried out at a rate of at least about 1.5 &mgr;m/min. The resulting FSG film is stable and has a low dielectric constant.

Abstract: Systems and methods for controlling, organizing, and viewing a plurality of electrostatic spray gun operating parameters from a centralized control panel are provided. In this regard, a control panel is provided having, for example, a gun control area for selecting one electrostatic spray gun of a multiple gun system, and an electrostatic control area for displaying and controlling the operational parameters of the selected electrostatic spray gun. The electrostatic control area functions essentially as a master control panel which can be shared by all the guns in the system. Each of the guns has an assigned gun control subpanel in the gun control area. Each subpanel includes a selector switch which can be used to monitor and control the gun associated with that subpanel on the master control panel. Each of the subpanels also has a limited display such as a bar graph which can be used to show the electrostatic performance of the guns.

Abstract: A chemical vapor deposition system that includes a housing configured to form a processing chamber, a substrate holder configured to hold a substrate within the processing chamber, a gas distribution system configured to introduce gases into the processing chamber, a plasma generation system configured to form a plasma within the processing chamber, a processor operatively coupled to control the gas distribution system and the plasma generation system, and a computer-readable memory coupled to the processor that stores a computer-readable program which directs the operation of the chemical vapor deposition system.

Abstract: A method and apparatus for baking-out and for cooling a vacuum chamber are provided. In a first aspect, an inert gas which conducts heat from the vacuum chamber's bake-out lamps to the shield and from the shield to the other parts within the vacuum chamber is introduced to the chamber during chamber bake-out. The inert gas preferably comprises argon, helium or nitrogen and preferably raises the chamber pressure to about 500 Torr during chamber bake-out. A semiconductor processing apparatus also is provided having a controller programmed to perform the inventive bake-out method. In a second aspect, a process chamber is provided having at least one source of a cooling gas. The cooling gas is input to the chamber and is allowed to thermally communicate with the chamber body and components. The cooling gas may reside in the chamber for a period of time or may be continuously flowed through the chamber. Once the chamber reaches a target temperature the cooling gas is evacuated.