Abstract: A method and system for chemical vapor deposition in which preferentially depositing chemical species are formed by extending the residence time of reactant gases in the reaction region. These preferentially depositing species deposit more rapidly on the sides and bottoms of trenches on semiconductor wafers and/or other CVD substrate4s and thus promote the generation of more uniform films that eliminate expensive post-processing steps such as reverse active masking.

Abstract: A whole organic EL display fabricating apparatus is provided inside a vacuum chamber. In this case, a first patterning unit B through a third patterning unit D for sequentially forming luminescent layer patterns of GREEN, BLUE, and RED on an anode pattern on a strip-shaped flexible substrate 1, and a fourth patterning unit E for forming a cathode pattern on the subsequent stage are provided. The first patterning unit B is provided with a first cooling can 21 and a vacuum vapor deposition unit below for forming the luminescent layer pattern of GREEN. The structures of the second patterning unit through the fourth patterning unit are similar to that of the first patterning unit. In fabricating a display, the substrate 1 is caused to travel from the first cooling can 21 toward a fourth cooling can 64 by the roll-to-roll system.

Abstract: The disclosure herein relates to a high throughput system for thin film deposition on substrates which can be used in applications such as optical disks, and in particular DVD disks, chip-scale packaging, and plastic based display, for example. An apparatus useful in the production of products of the kind described above includes: (a) a continuously moving web for simultaneously transporting a number of substrates to which a thin film of material is to be applied, wherein the moving web is a roll-to-roll moving web; (b) a central processing chamber which is maintained under vacuum and through which at least a portion of said continuously moving web travels; and, (c) at least one deposition device which is located within said central processing chamber, where at least a portion of said continuously moving web is exposed to material deposited from said deposition device. Typically the deposition device is a magnetron sputtering device.

Abstract: A gas shield assembly for protecting an exposed surface of an injector in a chemical vapor deposition system. The shield assembly includes a back wall which supports perforated sheets to define a plenum. The sheets are held in place by endcaps. A conduit delivers gas to the plenum. The conduit includes a stretch extending along the back wall and has a bend adjacent the ends of the back wall. The conduit includes perforations along the stretch and at the bends to provide substantially uniform flow of gas into the plenum and the ends.

Abstract: In one embodiment, the present invention is a method of coating at least one wafer with silicon nitride. The first step in the method is assembling at least one electrode set, wherein each electrode set includes at least one dielectric barrier between a top electrode and a bottom electrode. The second step is flowing at least one purge gas and at least one reactant at least partially between the electrodes, of at least one electrode set, substantially at atmospheric pressure. The next step in the inventive method is placing a wafer between the electrodes of at least one electrode set, wherein the wafer is substantially encompassed by the flowing gas. The last step in this embodiment of the inventive method is supplying AC power to at least one electrode set thereby causing a dielectric barrier discharge.

Abstract: A multiple nozzle thermal evaporation source includes a plurality of nozzles having a tapered shape. The nozzles may be coated with a thermally conductive material with a low emissivity material.

Abstract: The present invention provides an apparatus for forming a semiconductor film on a flexible substrate, comprising a supply device for supplying a flexible substrate, a recovery device for recovering the flexible substrate, a first heating device arranged between the supply device and the recovery device for heating the flexible substrate, a PVD device for depositing a film on the substrate by a physical vapor deposition, a CVD device for depositing a film on the substrate by a chemical vapor deposition, a second heating device for heating the material deposited on the substrate, and an etching device for etching the material deposited on the substrate, wherein the CVD device, the second heating device and the etching device are repeatedly arranged within a casing held under a prescribed atmosphere.

Abstract: A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber.

Abstract: A system for applying a polyurethane coating to a polyolefin floor tile, comprising a conveyor for moving the floor tile past a plurality of treatment devices, including a heater, a plasma generator, an applicator, and an ultraviolet light system. The heater and plasma generator increase the energy of the top surface of the floor tile, and the applicator applies a liquid polyurethane to the top surface while in the energized state. The ultraviolet light system then exposes the polyurethane to ultraviolet light to at least partially cure it.

Abstract: A device for generating microwave plasmas and having a microwave generator, a chamber feeding microwaves, and a plasma chamber with receptacles, if appropriate, is proposed, the chamber being of cylindrical construction. The plasma chamber preferably comprises the cylindrical chamber completely or partially. Coupling points are arranged in the common wall, preferably as slot couplers.

Abstract: A multiple nozzle thermal evaporation source includes a plurality of nozzles having a tapered shape. The nozzles may be coated with a thermally conductive material with a low emissivity material.

Abstract: A deposition apparatus of the present invention is arranged so that a surface area of a radio-frequency power applying cathode electrode disposed in a glow discharge space, in a space in contact with discharge is greater than a surface area of the whole of a ground electrode (anode electrode) including a beltlike member in the discharge space. This structure can maintain the potential (self-bias) of the cathode electrode disposed in the glow discharge space automatically at a positive potential with respect to the ground (anode) electrode including the beltlike member. As a result, the bias is applied in the direction of irradiation of ions with positive charge to a deposit film on the beltlike member, so that the ions existing in the plasma discharge are accelerated more efficiently toward the beltlike member, thereby effectively giving energy to the surface of deposit film by ion bombardment.

Abstract: A continuous process for depositing a thin film layer or layers on a substrate during the production of thin film photovoltaic devices comprising moving the substrate at an elevated temperature in a reduced pressure environment past one or more sources of material to be deposited thereby forming on the substrate at least one thin film of the material from the source.

Abstract: A process for deposition and condensation and reaction and separation and distillation employing at least two chambers separated by a diaphragm with at least one separation wall and at least one orifice or flow duct or plurality thereof, said process providing a controlled and stationary conveyance capacity of an uncondensed intermediary phase for a product or by-product with a controlled concentration, structure or microstructure, for example, said conveyance capacity relying on a controlled pressure of an atmosphere in the at least two chambers on both side of said diaphragm and on a novel diaphragm and condenser technology and a temperature control of one or more chamber walls or said diaphragm or parts of said diaphragm being transversed by said uncondensed intermediary phase.

Abstract: A chemical vapor deposition system (10) includes a housing (12) having an entry (30) and an exit (32) through which glass sheet substrates (G) to be coated are introduced and exited from a deposition chamber (14) defined by lower and upper housing portions (16, 18) having a seal assembly (22) at their horizontal junction which is higher than both the entry and the exit.

Abstract: In an apparatus for coating a substrate by means of a chemical gas phase separation process, the arrangement of the filaments (5, 17, 26) at least partially surrounding the substrate to be coated is not merely two-dimensional but three-dimensional in respect of the substrate.

Abstract: A conveyor system for parts coupled to a loadbar assembly is disclosed. The conveyor system includes a walking beam conveyor and a push bar conveyor. The loadbar assembly and walking beam conveyor are configured to allow transfer of parts coupled to loadbar assemblies along a path through upward and downward and forward and reverse movements of the walking beam conveyor. The push bar conveyor and the loadbar assembly are configured to urge parts coupled to the loadbar assemblies through the push bar conveyor by an incremental distance substantially equal to the length of a segment bar of the loadbar assembly.

Abstract: The present invention provides an apparatus and method for distributing gas to multiple feeds into a chamber 125 to process a substrate 115. In one embodiment, the system 155 includes a process gas injector 190 for introducing process gas into the chamber 125 and a shield assembly 200 having a number of shield bodies 210, 215, adjacent to the process gas injector to reduce deposition of process byproducts thereon. Each shield body 210, 215, has a screen 230 and a metering tube 240 with an array of holes 245 therein to deliver shield gas through the screen. Shield gas is supplied to the metering tubes 240 through a number of flowpaths 255, each having a flow limiter 265 with an orifice 270 sized so that equal flows of shield gas are provided from each of the shield bodies 210, 215. Preferably, the orifices 270 are also sized so that the flow of shield gas through each metering tube 240 is constant, even if the shield gas is supplied from a supply that varies in pressure or flow.

Abstract: A lid assembly for a semiconductor processing apparatus having at least two chambers comprises a lid plate having a first side and a second side and a plasma generation source mounted to the first side of the lid plate. Additionally, at least two gas boxes are coupled to the first side of the lid of the lid plate, and a divider is coupled between the plasma generation source and the at least two gas boxes.

Abstract: A successive vapor deposition system in which a vapor deposition material is heated, vaporized in a vacuum, and deposited onto a vapor deposition area of a substrate, includes a conveyer which conveys the substrate in a conveying direction parallel to a plane on which the substrate lies, wherein the vapor deposition area faces downward and is exposed through the underside of the conveyer; a plurality of vapor deposition chambers aligned in the conveying direction, each the vapor deposition chamber including a space through which the substrate is conveyed; at least one container positioned in each of the plurality of vapor deposition chambers below the plane on which the substrate lies, and containing the vapor deposition material, wherein a width of the container covers the vapor deposition area in a direction perpendicular to the conveying direction; and a heating medium provided for the container.

Abstract: A substrate cassette contains two physically spaced and parallel reels. A relatively long web of flexible substrate material is wound about one reel and the exposed end of the web is connected to the other reel, to thus expose a relatively short length of the substrate material at a deposition-plane that lies between the two reels. A first idler roller is associated with the first reel, a second idler roller is associated with the second reel, and the web is guided by the two idler rollers as the web moves between the two reels. The two idler rollers are mounted at fixed positions in order to accurately establish a fixed-position deposition-plane. The substrate cassette is placed within one or more vacuum deposition chambers, the web is advanced between the two reels, and one or more semiconductor layers are deposited on substantially the entire length of the web. A protective layer is provided as part of the web in order to protect the semiconductor layer(s) when the web is wound unto a take-up reel.

Abstract: In an apparatus for depositing polycrystalline diamond by plasma technology onto substrates (5) of large area, having a process chamber (1) with airlock (6a), a plurality of microwave plasma sources (9, 9′, . . . ) arranged in a common plane above the substrates (5) and extending transversely across the direction of substrate advancement, and gas inlet and gas outlet tubes (10, 10′, . . . , 11, 11′, . . . , 12, 12′, . . . , 13, 13′, . . . , 13a, . . . ) leading into the process chamber (1) are provided, a plurality of gas inlet and gas outlet tubes distributed over the length of the source are associated with each of the linear sources (9, 9′, . . . ), and the outlet openings of the gas inlet tubes being situated each directly above the linear source (9, 9′, . . . ), and the openings of the gas outlet tubes (13, 13′, . . . ) each in the area between two linear sources (9, 9′, . . .

Abstract: A continuous processing apparatus by plasma polymerization having a plurality of chambers to perform a surface processing by plasma polymerization on the surface of a substance being moved into a chamber, includes at least one vertical chamber in which a substance is vertically moved and at least one electrode is included therein. Since the vertical chamber can be possibly formed solely or by plural ones, or can be formed along with the horizontal chamber, various forms of plasma polymerization processing system can be constructed. In addition, the plurality of chambers can be utilized for various functions and use such as the polymerization chamber, the post-processing chamber and pre-processing chamber according to purposes of surface processing.

Abstract: In the step of forming a microcrystalline i-type semiconductor layer by high-frequency plasma CVD, wherein an area of the parallel-plate electrode is represented by S; a width of the discharge space in its direction perpendicular to the transport direction of the belt-like substrate, by Ws; a width of a region formed by the parallel-plate electrode together with its surrounding insulating region, in its direction perpendicular to the transport direction of the belt-like substrate, by Wc; a width of the belt-like substrate in the direction perpendicular to its transport, by Wk; a distance between the parallel-plate electrode and the belt-like substrate, by h; a power density at which crystal fraction begins to saturate at predetermined substrate temperature, material gas flow rate and pressure, by Pd; and a high-frequency power, by P, 2h/(Ws−Wc)≧2.5, (Ws/h)×2(Ws−Wk)/[4h+(Ws−Wc) ]≧10, and P≧(10/8)×Pd×S.

Abstract: There is provided a making method of a coated body by using ion plating. A melt and evaporating source housed in an evaporation container disposed above a subject to be coated in a vacuum container, is heated. The melt and evaporating source is evaporated through a number of fine evaporation holes formed in an evaporation face formed by the bottom of the evaporation container, yet preventing the melt and evaporating source from dropping. The evaporated particles from the melt and evaporating source are ionized with the use of plasma generated between the evaporation container and the subject to be coated. From above, the surface of the subject to be coated is coated with the ionized evaporated-particles, causing the ionized evaporated-particles to adhere to the surface of the subject to be coated, thus forming a coating film thereon.

Abstract: A discharge plasma processing device comprising a chamber with an evacuation system, a magnetic field generation system and an electric field application system with which the feature of operation is first to form a magnetic neutral line in the vacuum chamber and second to produce a plasma along the magnetic neutral line by controlling the shape of the line, its position related to an object to be processed and the plasma parameters is presented as useful device for many kinds of plasma processing like as sputtering, etching and plasma enhanced CVD as freely programmed, for instance extremely in uniform on the surface of the object.

Abstract: A film-forming apparatus comprising a vacuum chamber, a power application electrode, a raw material gas introduction portion through which a raw material gas is introduced into the vacuum chamber, and an exhaustion portion through which the vacuum chamber is exhausted, the power application electrode being arranged so as to oppose a substrate for film formation positioned in the vacuum chamber, characterized in that at least said raw material gas introduction portion or the exhaustion portion is provided with an opening adjusting member having a desired thickness for intercepting the plasma, and the power application electrode and the opening adjusting member are arranged to satisfy an equation a or c≧b, with a being a shortest distance between the power application electrode and the opening adjusting member provided at the raw material gas introduction portion, c being a shortest distance between the power application electrode and the opening adjusting member provided at the exhaustion portion, and b bei

Abstract: A film deposition apparatus equipped with a vacuum chamber, comprising a pair of rollers for vertically traveling a continuous sheet as a substrate, and a pair of sputtering cathodes for continuously depositing the film on the surfaces of the sheet in the vacuum chamber. The cathodes are vertically arranged and horizontally faced each other. The sheet is traveled between a pair of the cathodes. The apparatus and the film deposition process using it make it possible to deposit a film even on surfaces of a flexible sheet without causing problems such as defective film deposition or abnormal discharge, while ensuring stable, continuous, long-term operation.

Abstract: A vacuum lubricant deposition station coats a lubricant onto the back side of a moving web prior to coating the front side with emulsions. The deposition station has a sidewall creating a chamber containing a heat source along its bottom and an evaporating tray above the heater which holds the lubricant to be vacuum vapor deposited on the web. A water cooled jacket fits about the top of the sidewall and receives the film through a narrow slot between its top and bottom plates to expose the back side of the film to a vapor cloud of lubricant in the chamber. Lubricant from the cloud deposits on the back side of the web. Stray lubricant from the cloud condenses on the bottom plate which receives cooling water through an inlet. The cooling water traverses the length of the bottom plate, enters the top plate through a water loop connecting the top and bottom plates, and exits through the top plate. The vapor cloud condenses on the bottom plate before reaching the front side of the film.

Abstract: The coating plant includes a device for running a sheet to be coated along a traveling path past a window for the evaporation or sublimation of elements A an B, sources for the evaporation or sublimation of elements A and element B placed successively in a direction parallel to the traveling path so as to emit elements A and B through the window and a screen for reducing the angle of emission from the source of element B below the limit represented by an entry edge of the window, the screen being mounted so as to move translationally perpendicular to the traveling path and to move along the traveling path between the source of element A and the source of element B so as to obtain either a -A-AB-A- or a -B-AB-B- coating.

Abstract: A method for producing a laminated metal ribbon comprises the steps of (a) vapor-depositing a third metal layer on at least one welding surface of a first metal ribbon 4 and a second metal ribbon 5 in a vacuum chamber 1, the third metal being the same as or different from a metal or an alloy of the first and second metal ribbons 4, 5; (b) pressure-welding the first metal ribbon 4 to the second metal ribbon 5; and (c) subjecting the resultant laminate 9 to a heat treatment for thermal diffusion.

Abstract: A film-forming apparatus which has at least a vacuum vessel whose inside is capable of being vacuumed and a film-forming chamber having a discharge region provided in said vacuum vessel and in which a substrate web having a desired width and a desired length is arranged so as to constitute a part of said film-forming chamber, wherein said substrate web is continuously moved to pass through said discharge region of said film-forming chamber to continuously form a deposited film on said substrate web, characterized in that said film-forming chamber is provided with an opening-adjusting member such that said opening-adjusting member constitutes an entrance or/and an exit of said film-forming chamber, and a face of said opening-adjusting member which is opposed to said substrate web has one or more grooves formed substantially in parallel to a direction for said substrate web to be transported.

Abstract: An improved method and apparatus for applying discrete area holograms or other optical devices directly onto documents or other substrates in a continuous process analogous to the operation of a printing press. The continuous process is carried out in a vacuum chamber in which at least two process steps are performed in sequence: the formation of a micro-grooved discrete resin area and a localized coating of it with a reflective or refractive material layer. The formation of the micro-grooved resin area can be accomplished by electron beam curing of the resin. The localized coating of the micro-grooved resin can be done by sputtering. One or more other steps, including pre-coating, post-coating and partial removal of the reflective or refractive layer, may also be carried out as part of the continuous process within the vacuum chamber.

Abstract: The invention relates to a method and a device for the production of a strip-like metallic composite material by the high-temperature dip coating of a metallic carrier strip, consisting of a metallurgic vessel for receiving the liquid depositing material, through which the carrier strip is capable of being led in a preferably vertical run-through direction by means of pairs of rollers arranged on the entry and the exit side, and of a preheating device for the carrier strip, said preheating device being located upstream of the metallurgic vessel. At the same time, the preheating device (41) is arranged in a housing (61) which is arranged in the entry region upstream of the metallurgic vessel (11) and surrounds the carrier strip (21) and into which the medium coming from a media supply (52) is capable of being introduced via at least one feed (51) led into the housing.

Abstract: A method is proposed for vacuum-coating a substrate using a plasma-CVD method. In order to control the ion bombardment during the coating, a substrate voltage (US), produced independently from the coating plasma (20), is applied to the substrate, this voltage being modified during the coating. The substrate voltage (US) is usefully a direct voltage that is pulsed in bipolar fashion with a frequency of 0.1 kHz to 10 MHz. Moreover, a wear-resistant and friction-reducing multilayer structure of alternating hard material individual layers and carbon or silicon individual layers is proposed.

Abstract: A processing line includes a processing tool and an automatic process controller. The processing tool is adapted to deposit a layer of material on a semiconductor wafer based on an operating recipe. The automatic process controller is adapted to identify a post-idle set of wafers to be processed in the processing tool after an idle period, determine deposition times for wafers in the set of post-idle wafers, and modify the operating recipe of the processing tool for each of the wafers in the post-idle set based on the deposition times. A method for reducing wafer to wafer deposition variation includes designating a set of post-idle wafers; determining a deposition time for each of the wafers in the post-idle set, at least two of the deposition times being different; and depositing a layer on the wafers in the post-idle set based on the deposition times determined.

Abstract: A continuous feed coater for coating a length of substrate with vaporized or sprayed material, is disclosed. A specific example is a roll-to-roll coater which includes two lower supply rollers for supporting two webs of uncoated material, and two upper take-up rollers for supporting the webs after they are coated. A central web-support forms a plenum that acts as a deposition chimney or chamber by bringing the two webs into close proximity to each other to form two large walls of the plenum. The ends of the webs are sealed using side dams to form the chimney with a rectangular cross section such that the vapor cannot exit from the edges of the material. The vaporized coating constituents to be deposited on the rolled material are directed into the deposition plenum from a coating material supply source located at the bottom of the plenum, and are exhausted through the top of the plenum.

Abstract: A wafer carrier is provided comprised of a circular plate having a flat edge region extending around the circumference of the plate. The plate has a circular recessed center region with a recessed bottom surface and includes an upwardly inclined surface around the periphery of the recessed bottom surface. A substrate is placed in the center region where it is supported by a portion of the upwardly inclined surface and is spaced apart form the recessed bottom surface such that the substrate is supported only around its edge. The wafer carrier minimizes surface contact with the substrate thereby minimizing metal contamination and surface damage to the backside of a substrate and prevents deposition on the backside of the substrate.

Abstract: A linear semiconductor material having a thin metal-oxide layer and a resist layer is conveyed at a constant speed by rotating rollers. An electron-beam drawing apparatus, in which micro-electron-guns are aligned circumferentially, is disposed between the rollers. The linear semiconductor material passes through a cylindrical hole of the electron-beam drawing apparatus such that a circuit pattern is formed on a surface of the linear semiconductor material by an electron beam. The linear semiconductor material is developed and etched, and divided into predetermined lengths. Thus a linear semiconductor is completed. A semiconductor device is manufactured by bundling a plurality of the linear semiconductors of predetermined length.

Abstract: A method for forming a non-single-crystal semiconductor thin film and a photovoltaic device using an apparatus, which has a film deposition chamber with a film-forming space surrounded by a film deposition chamber wall and a belt-like substrate. An external chamber surrounding the deposition chamber wall is provided in the apparatus. While the belt-like substrate is moved in a longitudinal direction, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma, and thereby form a non-single-crystal semiconductor thin film on a surface of the belt-like substrate. A cooling mechanism and a temperature-increasing mechanism covering a part of an outside surface of the deposition chamber wall provide temperature control.

Abstract: A continuous plasma CVD apparatus, characterized in that frequency of high-frequency bias is in the range of 50-900 KHz, a blocking condenser is provided between a thin film and a high-frequency source so that the product C·f of electrostatic capacity C of the blocking condenser and frequency f of the high-frequency source is 0.02 [F·Hz] or more, and the total of impedances of all the rollers provided in the route of from a substrate unwind roller to a rotating drum is 10 k&OHgr; or more and the total of impedances of all the rollers provided in the route of from the rotating drum to a wind roller is 10 k&OHgr; or more. According to this apparatus, it becomes possible to continuously form a film without causing damage and deterioration of the substrate.

Abstract: A linear aperture deposition apparatus and process are provided for coating substrates with sublimed or evaporated coating materials. The apparatus and process are particularly suited for producing flexible films having an optical interference coating with a very high surface thickness uniformity and which is substantially free of defects from particulate ejection of a source material. The apparatus includes a source box containing a source material, a heating element to sublime or evaporate the source material, and a chimney to direct the source material vapor from the source box to a substrate. A flow restricting baffle having a plurality of holes is positioned between the source material and the substrate to confine and direct the vapor flow, and an optional floating baffle is positioned on the surface of the source material to further restrict the vapor flow, thereby substantially eliminating source material spatter.

Abstract: The subject of the invention is a glazing panel comprising a transparent substrate (1) especially one made of glass, provided with at least one functional, conductive and/or low-emissivity, transparent thin film (3). In order to improve the optical and especially the calorimetric appearance of the glazing panel, at least one intermediate film (2) is placed between the substrate (1) and the functional film (3), this at least one intermediate film having a refractive index gradient decreasing through its thickness. The invention also relates to the device intended for manufacturing this type of glazing panel.

Abstract: An apparatus for coating a substrate with a diamond like coating or other vacuum depositable material comprises a chamber 11 having, or acting as, an anode, means for supporting a substrate 15 in the chamber, means for establishing a low pressure atmosphere containing a hydrocarbon-based gas in the chamber, and a radio frequency source 12 for establishing a gas plasma in the chamber, the substrate 15 acting as a cathode.

Abstract: The present invention provides a method for making a stain-resistant float glass and an apparatus for carrying out such a method. In keeping with this method, SO3 is applied to the upper surface of float glass in an amount efficacious to materially reduce staining of the upper surface of the glass. Optimally, SO3 gas can be applied directly onto the upper surface of the glass. An apparatus of the invention generally includes a downwardly open hood positioned above the upper surface of the glass and having walls defining an enclosure. SO3 gas (either as such or as a reactive mixture of S02 gas and an oxygen-containing gas) is delivered through a delivery tube to the enclosure.

Abstract: In the substrate treatment apparatus including substrate treatment chambers (301 and 303) and a buffer chamber (302) having an exhaust system (306b) independent of the substrate treatment chambers, connection tubes (304a and 304b) are provided between the substrate treatment chambers and the buffer chamber, and gas inlets are respectively provided for the connection tubes. A gas (308) for treating a substrate flows from the connection tube (304a) into the substrate treatment chamber (301) and the buffer chamber (302), while a gas (309) for treating a substrate flows from the connection tube (304b) into the substrate treatment chamber (303) and the buffer chamber (302). Accordingly, the gas does not move from the substrate treatment chamber to the buffer chamber against a gas flow, thereby allowing the separation between ambiences.

Abstract: A vacuum vapor deposition apparatus includes a vacuum chamber having a plurality of vapor sources and a heater for heating the vapor sources to achieve vacuum vapor deposition on a surface of at least one substrate within the vacuum chamber. At least one of the vapor sources utilizes an organic material. A hot wall, which encloses the vapor sources and a space in which the vapor sources and the substrate confront each other, is heated to a temperature at which the organic material is neither deposited nor decomposed. The organic material is vapor deposited on the surface of the substrate by heating the vapor sources while the vapor sources and the substrate are moved relative to each other.

Abstract: A continuous plasma CVD apparatus, characterized in that frequency of high-frequency bias is in the range of 50-900 KHz, a blocking condenser is provided between a thin film and a high-frequency source so that the product C·f of electrostatic capacity C of the blocking condenser and frequency f of the high-frequency source is 0.02 [F·Hz] or more, and the total of impedances of all the rollers provided in the route of from a substrate unwind roller to a rotating drum is 10 k&OHgr; or more and the total of impedances of all the rollers provided in the route of from the rotating drum to a wind roller is 10 k&OHgr; or more. According to this apparatus, it becomes possible to continuously form a film without causing damage and deterioration of the substrate.

Abstract: A film forming method is described using an apparatus with a plurality of vacuum chambers which communicate with each other via a connection, where the apparatus has one or more detachable treatment rooms and where the method includes continuously forming a plurality of films on a band-shaped substrate within the treatment rooms, while continuously moving the substrate through the treatment rooms. The treatment rooms within said desired vacuum chambers are replaced after forming the film for a predetermined period as a part of the film forming method.

Abstract: A cluster tool for providing plasma treatment to a substrate includes a plurality of chambers to provide plasma treatment to the substrate. At least one of the chambers performs ion implantation to the substrate. A dielectric window is provided on a surface of the chamber which performs ion implantation to the substrate. A plasma source is provided external to the chamber which performs ion implantation to the substrate. The plasma source is at a distance proximate enough to provide a plasma within the chamber.