Abstract: A method and electrode assembly for treating a substrate with a non-equilibrium plasma in which the electrode assembly has two or more spaced barrier electrodes and a ground electrode spaced apart from the two spaced barrier electrodes for passage of a substrate to be treated. Plasma fluid medium is introduced between the barrier electrodes and is biased to provide a greater flow to an inlet region of the electrode assembly to help inhibit the ingress of air. Each of the barrier electrodes can be provided with central and leg sections having passages for introducing a cooling fluid into one of the leg sections and discharging said cooling fluid from the other of the leg sections. The central section can be provided with a transverse cross-sectional area less than that of the leg sections to increase velocity in the central section.

Abstract: A substrate processing apparatus include a spin chuck capable of holding a semiconductor wafer in a horizontal position, a drive motor for driving the spin chuck for rotation, and a processing vessel accommodating the spin chuck and the drive motor 50 therein and capable of sealing a supercritical fluid, such as supercritical carbon dioxide, therein. The supercritical fluid flows along the upper and the lower surface of the semiconductor wafer at velocities relative to the upper and the lower surface of the semiconductor wafer as the spin chuck holding the semiconductor wafer in a horizontal position rotates to remove contaminants including particles and adhering to the semiconductor wafer from the semiconductor wafer.

Abstract: The specification discloses a structure and method for measuring the etching speed. A test layer is connected with several resistors. Etching the metal layer disconnects in order the resistors from the circuit. The equivalent resistance of the sensing resistor system is measured to obtain the etching speed. In consideration of the errors of the resistors, the invention also provides a structure that utilizes an IC layout technique to put an interdigitized dummy resistor beside the sensing resistors. By taking the ratio of the equivalent resistance of the sensing resistors and the dummy resistor, the invention can compute to obtain the etching speed.

Abstract: Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.

Abstract: Compounds having two reactive functional groups are described that can be used to provide a connector group between a substrate and an amine-containing material. The first reactive functional group can be used to provide attachment to a surface of a substrate. The second reactive functional group is a N-sulfonylaminocarbonyl group that can be reacted with an amine-containing material, particularly a primary aliphatic amine, to form a carbonylimino-containing connector group. The invention also provides articles and methods for immobilizing amine-containing materials to a substrate.

Abstract: Apparatus for use in making a device by forming repetitive sequences of coatings on a flexible substrate including defining a path for the flexible substrate; the flexible substrate being disposed about at least a portion of the path; a first deposition source for depositing material located around the path periphery and in cooperative relationship with the surface of the disposed flexible substrate; an actuable structure effective when actuated for moving the flexible substrate around at least more than one revolution around the path; and actuating the actuable structure and the first deposition source so that at least two separate material coatings are provided on the substrate by the deposition source.

Abstract: Systems and methods are described for the synthesis of films, coatings or layers. An apparatus includes a first holder; a second holder coupled to the first holder; a linkage coupled to the first holder and the second holder to move the first holder relative to the second holder; a reusable tool coupled to the first holder, the reusable tool including a raised patterned surface; and a release layer coupled to the raised patterned surface of the reusable tool.

Abstract: A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substrate with a source of metal vapor between them, made up of an electrode to form a plasma (6) with the substrate or a separate electrically conducting element as a counter-electrode. The deposition metal is introduced in the liquid state in a retention tank (8) and is maintained as a liquid at an essentially constant level during the formation of the metal layer on the substrate. An Independent claim is included for the device used to put this method of coating a substrate into service.

Abstract: A system and method to expose a material to an ion beam during a continuous material production process may include a vacuum fixture to form the ion beam and a slit in the fixture to allow at least a portion of the ion beam to exit the fixture through the slit. The material can be placed in contact with an exterior area of the fixture so as to cover the slit. With the material in place, the vacuum within the fixture may be maintained and the ion beam formed. The material over the slit can be exposed to the ion beam. As the continuous process moves material past the slit, the vacuum within the vacuum fixture may help to maintain the material in contact with the fixture.

Abstract: In a method of the present invention for producing elastomer/steel-wire composite, a steel wire is drawn through a plurality of drawing dies, and the steel wire is coated with an elastomer within 30 secs. after the steel wire passed through the final drawing die. An apparatus of the present invention for producing an elastomer/steel-wire composite comprises a wire drawer for drawing a steel wire through a plurality of drawing dies, and a rubber coater for coating the steel wire with an elastomer, and the coating is completed within 30 secs. after the steel wire passed through the final drawing die.

Abstract: A vapor deposition apparatus, developed in particular for on-line deposition of phosphor or scintillator material, wherein said vapor deposition apparatus comprises a crucible containing a mixture of raw materials, a chimney having at least one inlet in communication with the said crucible and a linear slot outlet, one or more lineair heating elements, contained within said chimney, an oven surrounding said crucible, wherein said oven contains heating elements, shielding elements and cooling elements.

Abstract: Highly durable silica glass containing 0.01% to 2% by weight of at least one element selected from magnesium, calcium, strontium, barium, yttrium, hafnium and zirconium. The silica glass is produced by melting a powdery material comprising a finely divided silica powder and a finely divided zirconium-containing substance by oxyhydrogen flame or plasma are to form an accumulated molten material layer, and extending the molten material layer outwardly in radial directions.

Abstract: A pulsed electric field system for inactivation of biological agents on a dielectric sheet material. The pulsed electric field (PEF) system includes a dielectric layer located between an active electrode and a ground electrode, wherein said dielectric layer has a uniform surface profile. A pulsed electric field is provided in a gap between the dielectric layer and the active electrode. A transport assembly moves the dielectric sheet material through the gap. In a preferred embodiment, the system also includes sensors for sensing the position of the dielectric sheet material as it passes through the pulsed electric field.

Abstract: A layer forming method is disclosed which comprises the steps of supplying power of not less than 1 W/cm2 at a high frequency voltage exceeding 100 kHz across a gap between a first electrode and a second electrode opposed to each other at atmospheric pressure or at approximately atmospheric pressure to induce a discharge, generating a reactive gas in a plasma state by the charge, and exposing a substrate to the reactive gas in a plasma state to form a layer on the substrate.

Abstract: Atomic layer deposition forms a cavitation layer of a print head.

Abstract: A chill drum (14) is modified to improve heat transfert between the drum and a flexible web substrate (20) disposed around the drum. The drum surface (22) contains a series of passages (44) and distribution holes (46). A working gas is injected into these passages and flows out of the distribution holes into the space between the web and drum. A cover (32) prevents working gas from escaping from frum passages in the area not covered by the web, and supplies the working gas to the passages at the drum cover. Once gas is in the passages, leakage only occurs from the edges of the web. The pressure in the passages remains essentially constant around the drum, producing uniform elevated pressures under the entire web. Elevated pressure behind the web significantly improves overall heat transfert, thereby allowing higher deposition rates and other process advantages.

Abstract: Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.

Abstract: A dipole ion source (FIG. 1) includes two cathode surfaces, a substrate (1) and a pole (3); wherein a gap is defined between the substrate and the pole; an unsymmetrical mirror magnetic field including a compressed end, wherein the substrate is positioned in the less compressed end of the magnetic field; and an anode (4) creating an electric field penetrating the magnetic field and confining electrons in a continuous Hall current loop, wherein the unsymmetrical magnetic field serves an ion beam on the substrate.

Abstract: A method of growing a thin film onto a substrate placed in a reaction chamber according to the ALD method by subjecting the substrate to alternate and successive surface reactions. The method includes providing a first reactant source and providing an inactive gas source. A first reactant is fed from the first reactant source in the form of repeated alternating pulses to a reaction chamber via a first conduit. The first reactant is allowed to react with the surface of the substrate in the reaction chamber. Inactive gas is fed from the inactive gas source into the first conduit via a second conduit that is connected to the first conduit at a first connection point so as to create a gas phase barrier between the repeated alternating pulses of the first reactant entering the reaction chamber. The inactive gas is withdrawn from said first conduit via a third conduit connected to the first conduit at a second connection point.

Abstract: A closure assembly coupled to a vessel including a chamber and an access port in communication with the chamber, the closure assembly comprising: a door assembly coupled to the vessel and configured to move between an open position and a closed position, the door assembly in contact with the access port at a first location thereby sealing the chamber in the closed position, wherein pressure within the chamber applies a force to the door assembly at the first location. An actuator in moveable contact with the door assembly at a second location, the actuator configured to apply a counteracting force to the door assembly at the second location in response to pressure within the chamber to maintain the door assembly in the closed position. The actuator moves between a non-actuated and actuated position within an actuator bore, the actuator in the actuated position when a desired amount of pressure is applied to the actuator bore.

Abstract: The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber of a CVD reactor. At least one first and one second reaction gas are each led into a gas outlet area in an input area of the process chamber, by means of separate delivery lines. The gas outlet areas lie one above the other between the floor of the process chamber and the cover of the process chamber and have different heights. The first reaction gas flows out of the gas outlet area that is situated next to the process chamber floor, optionally together with a carrier gas. A carrier gas is added at least to the second reaction gas, which flows out of the gas outlet area lying further away from the process chamber floor.

Abstract: The present invention is related to the modifying of substrates with multiple modifying agents in a single continuous system. At least two processing chambers are configured for modifying the substrate in a continuous feed system. The processing chambers can be substantially isolated from one another by interstitial seals. Additionally, the two processing chambers can be substantially isolated from the surrounding atmosphere by end seals. Optionally, expansion chambers can be used to separate the seals from the processing chambers.

Abstract: A continuous coating system has several treatment chambers (1, 2) that are arranged one after the other in such a way that in each case, a wall (3) of one treatment chamber (1) having a passage (5) contacts a wall (4) in the adjacent treatment chamber (2) that also has a passage (6). One of the passages (5) is provided in a sealing insert (7), which supports itself on the same side with a first support surface (9) on the wall (3) of one treatment chamber (1) and with a second support surface (10) against the wall (4) of the adjacent treatment chamber (2). Between the two support surfaces (9, 10) and the respective walls (3, 4), in each case there is a surrounding gasket (13, 14) against the respective support surface (9, 10) and the wall (3, 4).

Abstract: A method and apparatus for depositing a uniform coating on a large area, planar surface using an array of multiple plasma sources and a common reactant gas injector. The apparatus includes at least one array of a plurality of plasma sources, wherein each of the plurality of plasma sources includes a cathode, an anode, and an inlet for a non-reactive plasma source gas disposed in a plasma chamber, and a common reactant gas injector disposed in a deposition chamber that contains the substrate. The common reactant gas injector provides a uniform flow of at least one reactant gas to each of the multiple plasmas generated the multiple plasma sources through a single delivery system. The at least one reactant gas reacts with the plurality of plasmas to form a uniform coating on a substrate.

Abstract: A system for coating band-shaped material, where the band-shaped material travels through at least one process chamber in which there is a vacuum, and at least one cooling roller. On the peripheral surface of each cooling roller are at least two magnetron sputter sources that are arranged separate from one another in magnetron chambers, which are formed by separate magnetron chamber walls and allow each chamber to be evacuated, so the pressure in the magnetron chamber can be maintained higher than that in the process chamber. The magnetron chamber walls and the magnetron sputter sources can be mounted on a common carriage, which is displaceable parallel to the cooling roller axis. The result is the reduction in the maintenance costs in cleaning of the magnetron chamber walls and at the same time improvement of the separation of gas between the magnetron chambers and the process chamber.

Abstract: A novel modular muffle etch injector assembly for use in a gas blanketed down-flow chemical vapor deposition apparatus of the type having a muffle and a modular gas injector assembly for introducing chemical vapors into a deposition chamber, the muffle being adapted for receiving and supporting the gas injector assembly, wherein deposition material residue collects on a lower surface of the muffle. The etch injector assembly of the present invention comprises an etch chamber having vertical sidewalls, a closed top end and an open bottom end, a supply mechanism for introducing a liquid etchant into the etch chamber, and a sealing device disposed along the open end of the etch chamber for providing a seal between the etch chamber and the lower surface of the muffle to confine the etchant to the etch chamber. The etch injector assembly preferably also includes an exhaust means for removing chemical vapors from the etch chamber.

Abstract: In a manufacturing apparatus of printed wiring board an aperture of a nozzle pipe located in a central position is larger than that at both sides, or the aperture of the piping to the nozzle pipe in the central position is larger than that of the piping at both sides. The mutual interval is narrower with the central nozzle pipes. The interval of the individual nozzle pipes is variable, and is also variable in the vertical direction. A pressure-proof flexible tube is provided between each nozzle pipe and the pump, and the interval of the individual nozzle pipes is variable, and is also variable in the vertical direction. Further, the spray pressure, oscillating angle, and oscillating speed can be set individually in each nozzle pipe, and such setting can be automated.

Abstract: The present invention is a deposition system for the production of coated substrates that provides a first deposition process that subsequently feeds a second deposition process and where the two deposition processes are occurring concurrently. The consecutive deposition system includes two dynamically isolated deposition chambers. The substrate is helically wrapped about a cooling block within the first deposition chamber such that the tape is exposed to a deposition zone a number of times sufficient to correspond to the desired film thickness. A shielding element may be included in the second deposition chamber to limit the size of the second chamber deposition zone and thus the film thickness of the second coating layer.

Abstract: A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The precursor is generated in a canister having a surrounding heating element configured to reduce formation of impurities.

Abstract: Disclosed herein is an improved gas gate for interconnecting regions of differing gaseous composition and/or pressure, more particularly between atmosphere and a vacuum. The gas gate includes a cylinder within a housing situated between the regions of differing gaseous pressure, wherein the gas gate provides for choke mode transonic flow of air leaks between the regions. A web of substrate material is adapted to move between the regions with at least one roller in a first region and at least one roller in a second region. The rollers are positioned to create sufficient tension as the web advances over the top peripheral portion of the cylinder between the two regions or under the bottom peripheral portion of the cylinder between the two regions.

Abstract: In a semiconductor manufacturing system for manufacturing compound semiconductor by MOCVD, a lead-in member is provided for guiding feed gas supplied from a feed gas supply unit onto the surface of a semiconductor substrate disposed in a reactor, a main body of the lead-in member is constituted as a hollow member to form a feed gas guide passage for conducting the feed gas in an prescribed direction and is formed with multiple orifices, and the feed gas in the feed gas guide passage is jetted from the orifices in a direction perpendicular to the prescribed direction so that the semiconductor substrate is bathed in a feed gas flow of uniform amount jetted from the lead-in member in this manner. Furthermore, a pressure differential produced between the inner side and outer side of the nozzle member enables the feed gas jetted from the nozzle member to flow over the whole surface of the substrate at a uniform flow rate.

Abstract: A film deposition apparatus equipped with a vacuum chamber, comprising a pair of rollers for vertically traveling a continuous sheet as a substrate, and a pair of sputtering cathodes for continuously depositing the film on the surfaces of the sheet in the vacuum chamber. The cathodes are vertically arranged and horizontally faced each other. The sheet is traveled between a pair of the cathodes. The apparatus and the film deposition process using it make it possible to deposit a film even on surfaces of a flexible sheet without causing problems such as defective film deposition or abnormal discharge, while ensuring stable, continuous, long-term operation.

Abstract: A continuous feed coater for coating a length of substrate with vaporized or sprayed material, is disclosed. A specific example is a roll-to-roll coater which includes two lower supply rollers for supporting two webs of uncoated material, and two upper take-up rollers for supporting the webs after they are coated. A central web-support forms a plenum that acts as a deposition chimney or chamber by bringing the two webs into close proximity to each other to form two large walls of the plenum. The ends of the webs are sealed using side dams to form the chimney with a rectangular cross section such that the vapor cannot exit from the edges of the material. The vaporized coating constituents to be deposited on the rolled material are directed into the deposition plenum from a coating material supply source located at the bottom of the plenum, and are exhausted through the top of the plenum.

Abstract: A method for surface treatment of at least one electrically conducting substrate or a substrate that has been coated so as to be conducting (1) by means of a gas placed in the region of an electric discharge (2). The discharge region is restricted by at least two essentially opposite sides of the substrate surface to be treated (7). This process is especially suitable for treating band-shaped and continuously supplied substrates.

Abstract: A deposited film forming apparatus has a power applying electrode disposed above a flat plate type base member grounded, in a vacuum chamber, and a power source for supplying a power to the power applying electrode, the deposited film forming apparatus being constructed to supply the power from the power source to the power applying electrode so as to generate a plasma in a discharge space between the power applying electrode and a substrate disposed in opposition to the power applying electrode in the vacuum chamber and serving as an electrode in a pair with the power applying electrode, thereby decomposing a source gas introduced into the vacuum chamber to form a deposited film on the substrate, wherein the power applying electrode is fixed to the base member with the power applying electrode being isolated from the base member.

Abstract: Plasma processing system and methods for stripping the buffer and, optionally, removing the cladding from an optical fiber. The plasma processing system includes a holder capable of holding one or more optical fibers such that a mid-span portion of each optical fiber is exposed to a plasma generated within a processing chamber of the system and the ends of each optical fiber are unaffected by the plasma treatment. Tapered transition zones are created between the plasma-treated portion of the optical fiber and the shielded ends. Treatment may be accomplished using a plasma containing atomic and molecular radicals and ions of fluorine and oxygen.

Abstract: A pyrolysis oven provides uniform pyrolytic coatings on capacitor anodes. An oven chamber contains cross-flow blowers situated to provide uniform laminar flow of oven atmosphere over the objects to be treated. The top and side walls of the chamber meet in an inverted V such that when the blower operate, a vortex is created in the inverted V in the chamber.

Abstract: The present invention is a high-throughput ion beam assisted deposition (IBAD) system and method of utilizing such a system that enables continuous deposition of thin films such as the buffer layers of HTS tapes. The present invention includes a spool-to-spool feed system that translates a metal substrate tape through the IBAD system as the desired buffer layers are deposited atop the translating substrate tape using an e-beam evaporator assisted by an ion beam. The system further includes a control and monitor system to monitor and regulate all necessary system parameters. The present invention facilitates deposition of a high-quality film over a large area of translating substrate.

Abstract: The present invention provides a vapor deposition method and a vapor deposition apparatus as one of manufacturing apparatus that promotes an efficiency of utilizing an EL material to reduce a manufacturing cost and is excellent in uniformity or throughput of forming an EL layer. In a deposition chamber, according to the present invention, an evaporation source holder to which a container encapsulating an evaporation material is set is moved (or shuttled) at a constant speed only in one direction (Z direction) with respect to the substrate. The substrate is transported in a direction (X direction) orthogonal to the movement direction of the evaporation source holder (Z direction) at regular intervals.

Abstract: The present invention is an apparatus for and method of cooling and positioning a translating substrate tape during a continuous high-throughput deposition process such as IBAD that is characterized by a long deposition zone where the substrate tape comes into contact with a substrate assembly as it translates the length of the deposition zone. A chilled liquid passes through the substrate assembly, maintaining the temperature of the substrate assembly below a specified level. Also passing through the substrate assembly is an inert gas that exits at an interface between the translating tape and the substrate assembly.

Abstract: Apparatus and methods for coating a substrate. In an exemplary embodiment, the apparatus are used to create a metallized substrate for use as an EMI/RFI shield. The apparatus typically includes a movable processing apparatus that is movable orthogonal to the substrate to treat the substrate. The processing apparatus can include a surface preparation assembly, a heating assembly, a thermoforming assembly, a metallizing assembly, a cutting assembly, or the like.

Abstract: A unique system and method for laser vapor deposition of a material onto a substrate are disclosed. The system includes a laser source configured to emit a laser beam, a target material positioned in front of the laser source to be struck by the laser beam, and a substrate positioned behind the target material in relation to the laser beam. The laser beam strikes the target material causing a portion thereof to melt. The melting zone propagates through the target material until is reaches the opposing surface, and a vaporized portion of the target material is ejected onto the substrate. The target material can be deposited onto the substrate in a pre-determined pattern with a pre-determined thickness. In another embodiment of the invention, the target material can be deposited on a cassette structure to facilitate easy access.

Abstract: With a conventional cylindrical can method, a region used as a film formation ground electrode is a portion of the cylindrical can, and an apparatus becomes larger in size in proportion to the surface area of the electrode. A conveyor device and a film formation apparatus having the conveyor device are provided, which have a unit for continuously conveying a flexible substrate from one end to the other end, and which are characterized in that a plurality of cylindrical rollers are provided between the one end and the other end along an arc with a radius R, the cylindrical rollers being arranged such that their center axes run parallel to each other, and that a mechanism for conveying the flexible substrate while the substrate is in contact with each of the plurality of cylindrical rollers is provided.

Abstract: Method for producing a multi-layered film web by joining together at least film webs and/or at least one film web and at least one coating material, wherein that surface of at least one film web which is brought into contact with another film web or with a coating material is treated with an indirect atmospheric plasmatron, with the optional addition of a working gas to the plasma generated by the plasmatron.

Abstract: An apparatus for processing a substrate intermittently transferred includes a transferring unit, including a plurality of rotary rollers for transferring a substrate and also includes at least one removing unit for removing foreign substances present on the curved face of one of the rotary rollers, the rotary roller spaced upstream of a winding unit for winding the substrate.

Abstract: A deposition apparatus and method for continuously depositing a polycrystalline material such as polysilicon or polycrystalline SiGe layer on a mobile discrete or continuous web substrate. The apparatus includes a pay-out unit for dispensing a discrete or continuous web substrate and a deposition unit that receives the discrete or continuous web substrate and deposits a series of one or more thin film layers thereon in a series of one or more deposition or processing chambers. In a preferred embodiment, polysilicon is formed by first depositing a layer of amorphous or microcrystalline silicon using PECVD and transforming said layer to polysilicon through heating or annealing with one or more lasers, lamps, furnaces or other heat sources. Laser annealing utilizing a pulsed excimer is a preferred embodiment. By controlling the processing temperature, temperature distribution within a layer of amorphous or microcrystalline silicon etc.

Abstract: In one embodiment, the invention is directed to aperture mask deposition techniques using aperture mask patterns formed in one or more elongated webs of flexible film. The techniques involve sequentially depositing material through mask patterns formed in the film to define layers, or portions of layers, of the circuit. A deposition substrate can also be formed from an elongated web, and the deposition substrate web can be fed through a series of deposition stations. Each deposition station may have an elongated web formed with aperture mask patterns. The elongated web of mask patterns feeds in a direction perpendicular to the deposition substrate web. In this manner, the circuit creation process can be performed in-line. Moreover, the process can be automated to reduce human error and increase throughput.

Abstract: Method and apparatus for treating a surface of a substrate plate under irradiation of ultraviolet ray emitted from a dielectric barrier discharge lamp. Upon admission into a treating chamber, oxygen is removed from a treating surface and surrounding atmosphere of a substrate plate in order to suppress energy losses of ultraviolet ray to a minimum.

Abstract: A thin film forming apparatus includes: a first electrode having a first discharge surface and a second electrode having a second discharge surface, the first discharge surface facing opposite to the second discharge surface to form a discharge space; a gas supply unit for supplying a gas including a thin film formation gas to the discharge space; a power source for discharging and activating the gas by applying a high frequency electric field across the discharge space; and a film transporting mechanism for transporting a protecting film for preventing at least one of the first electrode and the second electrode from being exposed to the activated gas, wherein a thin film is formed by exposing a substrate to the activated gas and, the protecting film is transported in contact with at least one of the first discharge surface and the second discharge surface and with at least a part of a surface other than the discharge surface which continues to the discharge surface.

Abstract: The vacuum processing apparatus includes a vacuum chamber, a vacuum pump, and a pipe 30 connecting the vacuum chamber to the vacuum pump to evacuate the vacuum chamber. A flexible pipe is included as a part of the pipe, and a mechanism for fixing the flexible pipe so as not to shrink at the time of evacuation. The mechanism includes a bar for fixing the vacuum pump side of the flexible pipe to a floor. In an embodiment, the vacuum processing apparatus is a substrate bonding apparatus for fabricating a display device.