Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar manner relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

Abstract: In a plasma processing method and apparatus, microwaves are radiated from a slot antenna set at the bottom of a resonator, a plasma is generated using the microwave and a sample is processed by the plasma. A plasma having a ring-form is generated by the microwaves radiated from the slot antennas, which are disposed at an angle which is neither in parallel to nor perpendicular to a surface current flowing on a slot antenna plate. Thereby, the sample is uniformly processed.

Abstract: The present invention employs a plurality of small inductive antennas to generate a processing plasma. In one embodiment, small coil antennas are secured within the chamber so that both of the pole regions of the antennas couple power to the plasma. The antennas may be oriented so that poles regions are anywhere from perpendicular, to parallel to a chamber wall. The number, location, and orientation of the small antennas within the chamber may be selected to optimize plasma characteristics. In addition, the antennas may be secured to top, side, or bottom walls to improve plasma characteristics; and power deposition within the processing chamber may be adjusted by changing the orientation of the coils, and the magnitude and phase relationship of RF power through the individual antennas. Process gas may be selectively delivered to areas of high power deposition such as adjacent pole regions or through the center of a coil or loop antenna to control plasma characteristics.

Abstract: A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an end of the electrode opposite to a high frequency power introducing point of the electrode and a grounded portion. A plasma treatment apparatus and a plasma treatment method are also provided employing the above high frequency introducing means. A deposition film of high quality is formed stably and efficiently in an extremely uniform thickness and an extremely uniform quality at a high speed on a base member of a large area by adjusting the absolute value of the reactance.

Abstract: In a plasma generating apparatus utilizing electron cyclotron resonance, comprising a vacuum vessel capable of maintaining a vacuum state therein, an antenna for radiating electromagnetic waves into the vacuum vessel, a permanent magnet for forming a resonance magnetic field, and an outer sleeve made of an insulator and accommodating the permanent magnet therein, the outer sleeve being permeable to lines of magnetic force and having air tightness, two permanent magnets are arranged to form the resonance magnetic field in a spaced relation with the same polarity poles of the permanent magnets facing each other. With this ECR type plasma generating apparatus, a resonance region is increased so that various plasma processes can be uniformly performed over a wider region.

Abstract: This invention relates to an inductively-coupled high density plasma producing apparatus and a plasma processing equipment having the apparatus. The plasma processing equipment consists of a shape-adjustable coil (antenna), a RF power generator, an impedance matching network, a plasma chamber, a gas supply system, and a vacuum system. The gases for producing plasma are fed into the plasma chamber. The RF power is fed into the coil to produce plasma in the plasma chamber. This invention is characterized by the provision of a shape-adjustable coil, which is used to shape the RF power profile in the plasma chamber such that the plasma density profile (uniformity) can be controlled.

Abstract: An external inductive coil is used in a plasma process system having a dielectric shield which separates the coil from the plasma. The shield includes channels provided along the inner side of the shield facing the plasma region. The channels inhibit the formation of a continuous metal film over the inner surface of the shield during sputtering and deposition. The sidewalls defining the channels permit RF transmission after the surfaces directly facing the plasma are coated with metal.

Abstract: Apparatus and method for providing a modulated-bias plasma are described. In particular, an RF source or collector includes one or more sources to provide differing driving frequencies or bias frequencies, respectively. These frequencies, over time, interfere with one another to produce beating at one or more controllable, infinitely variable beat frequencies. As a beat frequency has significantly fewer cycles per second than a driving or bias frequency, a modulated-bias plasma may be provided without turning power on and off as in conventional "pulsed" plasma systems. Beat frequencies facilitate modulation of the driving or bias frequencies, which may lie within a relatively narrow frequency band. Also, the use of a plurality of driving or bias frequencies facilitates use of more conventional RF sources or collectors owing to lower power requirements at each frequency. In accordance therewith, apparatus and method described may be employed for plasma etching and/or plasma enhanced vapor deposition.

Abstract: A ceramic composition of matter for a process kit and a dielectric window of a reactor chamber wherein substrates are processed in a plasma of a processing gas. The ceramic composition of matter contains a ceramic compound (e.g. Al.sub.2 O.sub.3) and an oxide of a Group IIIB metal (e.g., Y.sub.2 O.sub.3). A method for processing (e.g. etching) a substrate in a chamber containing a plasma of a processing gas. The method includes passing processing power through a dielectric window which is formed from the ceramic composition of matter.

Abstract: A thin film forming apparatus has a vacuum chamber as a film forming chamber, a plasma generating unit and an ion source. In the vacuum chamber, a substrate is placed and a thin film is formed on the substrate. The plasma generating unit decomposes a source gas introduced into the vacuum chamber to generate a plasma of the source gas near a film-forming surface of the substrate within the vacuum chamber. The ion source is provided around the vacuum chamber. The ion source produces ion beams that are drawn out to be directed substantially parallel to the film-forming surface of the substrate to irradiate the plasma.

Abstract: An electromagnetic radio-frequency or microwave device having a treatment chamber (6) with a transmission wall (7, 7', 7"), which is permeable for the electromagnetic waves, to an adjacent chamber (4) and with a design of the transmission wall (7, 7', 7") for influencing the intensity distribution of the transmission of the electromagnetic waves into the treatment chamber (6) allows low-loss control of the intensity of the transmitted waves in that the transmission wall (7, 7', 7") has a large number of antenna elements (10, 10') which are directed at an angle to the wall plane of the adjacent chamber (4), are in the form of rods, and project centrally through through-openings (14, 14') which are bounded by electrically conductive material.

Abstract: An inductively coupled type dry etching apparatus has an RF antenna disposed on a dielectric wall forming the ceiling of a process chamber. The process chamber is divided into a plasma generating space and a processing space by the partition of an intermediate electrode. A susceptor is arranged in the processing space, for mounting a semiconductor wafer thereon. The partition has openings for the plasma generating space and the processing space to communicate with each other. The partition is formed of a plurality of conductive beams radially arranged. The conductive beams extend in directions perpendicular to the direction of an electric field generated by the RF antenna, and have warps to absorb thermal stress.

Abstract: Controlling ion/radical ratio and monoatomic/polyatomic radical ratio in a process plasma provides improved processing performance during inductively-coupled plasma and/or helicon wave plasma processing of substrate materials. In a plasma processing method employing inductively coupled plasma, high frequency current to a high frequency antenna is intermittently supplied in a controlled manner to control the state of gas dissociation to promote formation of polyatomic radicals. In a plasma processing method employing helicon wave plasma, current supplied to a magnetic field generator is intermittently supplied in a controlled manner to promote formation of ions. In a preferred method, both the high frequency current and magnetic field generating current are varied in a controlled manner to provide a variable plasma composition, i.e., radical rich plasma or ion-rich plasma, as desired, for improved plasma processing, especially improved selective anisotropic dry etching at high etch rate.

Abstract: A plasma etching apparatus of the induction coupling type for processing an LCD substrate has a process container forming an airtight process room. A work table is arranged in the process room for supporting the LCD substrate. A vacuum pump is arranged for exhausting and setting the process room into a vacuum state. An antenna block having a plurality of dielectric layers is arranged to face the work table. An RF antenna is embedded in one of the dielectric layers of the antenna block for forming an electric field. A power supply is connected to the RF antenna for applying an RF power. The lowermost layer of the antenna block is formed as a shower head for supplying a process gas into the process room from a position between the RF antenna and the work table. At least part of the process gas is turned into plasma by the electric field.

Abstract: A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF.sub.4 is employed as the fluorine source for the FSG film.

Abstract: A plasma processing device (25) including a vacuum chamber (27) for processing a substrate (29) and a source chamber (26) for generating a plasma is disclosed where the source chamber (26) has a non-cylindrical geometry. Helicon waves of plasma are propagated from the source chamber into the vacuum chamber by a magnetic field having substantially parallel magnetic field lines extending from the source chamber into the vacuum chamber. A RF antenna (31 and 32) of a novel serpentine configuration is used to couple electromagnetic energy into the source chamber to create helicon plasma waves in the source chamber (26). The non-cylindrical geometry of the source chamber allows the processing of large area substrates due to the ability to scale the source chamber to the desired application while maintaining throughput efficiency and the ability to propagate helicon waves along the magnetic field lines present in the source chamber.

Abstract: The arrangement comprises an antenna coil disposed close to a cover 4 for a Plasma forming chamber 3 and having one side surface opposed to the chamber space of said plasma forming chamber, a magnetically permeable core 7 of ferromagnetic material whose lower surface opposed to said chamber space is formed with a groove 7a in which the conductor of said antenna coil is received, and a susceptor 16 disposed in the lower region of said chamber space for placing an object to be treated 19 thereon.

Abstract: In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body.

Abstract: The invention is embodied in a plasma reactor including a plasma reactor chamber and a workpiece support for holding a workpiece near a support plane inside the chamber during processing, the chamber having a reactor enclosure portion facing the support, a cold body overlying the reactor enclosure portion, a plasma source power applicator between the reactor enclosure portion and the cold body and a thermally conductor between and in contact with the cold body and the reactor enclosure. The thermal conductor and the cold sink define a cold sink interface therebetween, the reactor preferably further including a thermally conductive substance within the cold sink interface for reducing the thermal resistance across the cold sink interface. The thermally conductive substance can be a thermally conductive gas filling the cold body interface. Alternatively, the thermally conductive substance can be a thermally conductive solid material.

Abstract: An apparatus and method for fabricating a spherical shaped semiconductor integrated circuit according to which a chamber is provided into which spheres of a semiconductor material are introduced therein. Process gases are also selectively introduced into the chamber. The chamber includes a metallic portion that is selectively provided a voltage. Upon receiving the voltage, the chamber attracts ions from the process gases, at least some of the attracted ions treating the spheres according to a particular aspect of the fabrication process.

Abstract: The invention relates to a plasma technique, and can be used for generation of beams of charged particles, for instance, ions, in technological goals and in the space electric propulsion installations. Gas discharge device comprises an axially symmetric chamber with at least one face wall, a HF power input unit and a magnetic system providing the generation of stationary non-uniform magnetic field inside the chamber. The induction of magnetic field decreases not only in the radial direction towards the chamber axis of symmetry but also in the longitudinal direction towards the face part of the chamber opposite to the area of HF power input unit arrangement. The invention is characterized in that the HF power input unit is fabricated as conductor of zigzag recurrent symmetric shape and is located on the lateral and face walls of the chamber comprising the region of plasma generation and in that the horizontal size of the chamber exceeds its longitudinal size.

Abstract: A plasma processing apparatus is furnished with a reactor which is furnished with a susceptor 12, a reaction gas delivery mechanism which delivers reaction gas to the inside of the reactor, a pumping mechanism 24 which pumps out an interior of the reactor, and a plasma-generating mechanism. The reactor is made of metal, the plasma-generating mechanism includes an at least single-winding coil 16 which produces an induced electric field, and the coil is established within the reactor and surrounding the plasma-generating space in a state surrounded by dielectrics parts 15 and 17.

Abstract: A reactor 20 includes a shield 50 which prevents the deposition of materials along a line-of-sight path from a wafer 26 toward and onto an electrode 32, or a window 38 which couples an electrode 32 to a reaction chamber of the reactor 20. The shield can be comprised of a conductor and/or an insulator. The shield can affect the character of a plasma generated in the reactor.

Abstract: In one aspect, the invention is embodied in an RF inductively coupled plasma reactor including a vacuum chamber for processing a wafer, one or more gas sources for introducing into the chamber reactant gases, and an antenna capable of radiating RF energy into the chamber to generate a plasma therein by inductive coupling, the antenna lying in a two-dimensionally curved surface. In another aspect, invention is embodied in a plasma reactor including apparatus for spraying a reactant gas at a supersonic velocity toward the portion of the chamber overlying the wafer. In a still further aspect, the invention is embodied in a plasma reactor including a planar spray showerhead for spraying a reactant gas into the portion of the chamber overlying the wafer with plural spray nozzle openings facing the wafer, and plural magnets in an interior portion of the planar spray nozzle between adjacent ones of the plural nozzle openings, the plural magnets being oriented so as to repel ions from the spray nozzle openings.

Abstract: A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.

Abstract: A plasma source uses radio frequency electromagnetic radiation to ionize and dissociate gas molecules into reactive species within a plasma generation tube and emits the species to react with and remove contaminants from surfaces on a spacecraft. The source of the radiation is an antenna brazed to the outside of the plasma generation tube. Permanent magnets ring the plasma generation tube within a metallic housing to generate a magnetic field. Pole pieces are provided to improve the strength of the field and to improve its uniformity and axial orientation within the plasma generation tube. A plenum and a gas diffusing element distribute gas entering the plasma generation tube.

Abstract: In a plasma etching apparatus, an inactive gas and a reactive gas are supplied from gas spouting holes into a process chamber, and are turned into plasma by means of RF discharge, so that a semiconductor wafer placed on a susceptor is etched by the plasma. An antenna formed of a solenoidal coil is arranged around the side wall of the process chamber, so as to generate an RF inductive electric field in the process chamber. A plurality of barriers are arranged to extend into the skin-depth region of the plasma from the side wall of the process chamber, so as to limit a mean free path of electrons in the skin-depth region. The barriers decrease density of low energy electrons in the skin depth region, so as to suppress progress of dissociation of the reactive gas, thereby obtaining a predetermined etching selectivity.

Abstract: A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced.

Abstract: The invention is embodied in a plasma reactor having a vacuum chamber with a cylindrical side portion and a ceiling at a certain height above the top of the cylindrical side portion, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports near the cylindrical side portion and a vacuum pump, the reactor including a generally planar disk-shaped conductive ceiling electrode adjacent the ceiling, a helical coil antenna having a bottom winding near the top of the cylindrical side portion and a top winding generally corresponding to the second diameter near the planar disk-shaped conductive ceiling electrode, the helical coil antenna substantially spanning the height between the top of the cylindrical side portion and the ceiling, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source or (b) ground or (c) a floating potential (i.e., unconnected to any potential source).

Abstract: A plasma generator operable in the UHF and VHF bands is adaptable to process substrates having different sizes and shapes. The device includes a plurality of electrodes, a power supply for providing a high frequency signal to at least one of the electrodes, and antennas attached to the plurality of electrodes. Antennas on one electrode are arranged substantially parallel and alternately to antennas attached to another adjacent electrode.

Abstract: A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate.

Abstract: An apparatus for generating plasma, includes a cylindrical vacuum chamber made of dielectric substance, the chamber being open only at a bottom thereof and having a height of 50 mm or smaller, at least one antenna coil disposed around the chamber for receiving high frequency power therein, and at least one electromagnetic coil disposed around the antenna coil. The cylindrical vacuum chamber may be replaced with a plate made of a dielectric substance. The apparatus is operative to carry out photoresist using etching without leaving any residue under a high selection ratio to the photoresist. In addition, the etching product does not tend to adhere to the vacuum chamber, and it would be easy to remove etching product from the vacuum chamber, even if the product adheres to the vacuum chamber.

Abstract: A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.

Abstract: Disclosed is a plasma dry processing apparatus for producing a plasma with a resonance zone including a chamber for plasma processing at least one workpiece, the workpiece situated at a first end of the chamber; an induction coil at a second end of the chamber, spaced from the workpiece, for providing a radio frequency induced electromagnetic magnetic field to generate a helicon plasma within the chamber; a plurality of magnetic dipoles contained within the material of the induction coil, the magnetic dipoles having their fields directed towards the interior of, and producing a well-confined plasma within, the chamber, wherein the fields are adjacent to the second end of the chamber and keep the plasma spaced from the second end of the chamber.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: Contaminants are cleaned from the surface of a body in space by generating a substantially space-charge neutral reactive plasma, directing the plasma onto the contaminated surface at an energy below the surface sputtering energy (typically 20 eV), and reacting the plasma with the contaminants to remove them. A helicon wave plasma source is made light weight and compact enough for spacecraft use, with a plasma energy low enough to avoid damaging optical surfaces, by using permanent magnets to establish a static axial magnetic field, and a simple but novel rf antenna design. The antenna consists of a pair of spaced conductive rings which extend around the plasma tube, with conductive base and rf feed bars extending between the rings on diametrically opposite sides. The feed bar is interrupted to provide an rf input on opposite sides of the interruption. The antenna is preferably formed as an integral metal unit, with its rings rigidly supported by and integral with opposite ends of the base bar.

Abstract: A device for forming a microwave plasma including an ionizing chamber wherein a gas can be introduced so as to undergo excitation induced by the presence of a high frequency alternating electric field produced by a plurality of metal antennas. The device includes a gas-free volume wherein metal antennas are arranged parallel to one another and are distributed at the nodes of a regular plane array, an end of each antenna extending from the gas-free volume in the ionizing chamber and an induction loop producing microwaves in the gas-free volume.

Abstract: In one aspect, the invention is embodied in an RF inductively coupled plasma reactor including a vacuum chamber for processing a wafer, one or more gas sources for introducing into the chamber reactant gases, and an antenna capable of radiating RF energy into the chamber to generate a plasma therein by inductive coupling, the antenna lying in a two-dimensionally curved surface. In another aspect, invention is embodied in a plasma reactor including apparatus for spraying a reactant gas at a supersonic velocity toward the portion of the chamber overlying the wafer. In a still further aspect, the invention is embodied in a plasma reactor including a planar spray showerhead for spraying a reactant gas into the portion of the chamber overlying the wafer with plural spray nozzle openings facing the wafer, and plural magnets in an interior portion of the planar spray nozzle between adjacent ones of the plural nozzle openings, the plural magnets being oriented so as to repel ions from the spray nozzle openings.

Abstract: A plasma discharge apparatus includes a chamber in which plasma discharge is produced; an antenna composed of a loop coil formed from an electric conductor which can be supplied with R.F. power so as to produce a high frequency electric field in the chamber; and an electric shield of a shield layer of non-magnetic electrically conductive material which toroidally surrounds the coil and which has openings. The shield layer is grounded and electrically connected to the antenna so as to be a return circuit. The electric shield can be formed from a strip electric conductor toroidally wound to provide a spiral gap opening between turns. The strip can further be toroidally wound over the spiral gap but separated from the underlying strip layer to form a double layer shield.

Abstract: A plasma processing apparatus comprises a susceptor for supporting a target object to be processed having a target surface to be processed in a process vessel, a plurality of process gas supply nozzles for supplying a process gas for the target object into the process vessel, and an RF coil for generating an electromagnetic wave in the process vessel to generate a plasma of the process gas. The supplying nozzles have process gas injection holes formed at a plurality of levels in a direction substantially perpendicular to the target surface of the target object in the process vessel, and the gas injection holes located at an upper level are closer to a center of the target surface than gas injection holes located at a lower level.

Abstract: A low-pressure high-density plasma is excited in a plasma chamber surrounded by a cylindrical inner wall of a ring-shaped waveguide resonator to which the microwave energy is fed by a coupling from a microwave generator. The output coupling of the microwave energy from the standing wave maintained in the waveguide resonator to the plasma chamber is effected through a multiplicity of equispaced slits whose spacing is one half or one waveguide wavelength and which extend parallel to the generatrices of the cylindrical inner wall of the ring-shaped waveguide resonator.

Abstract: Contaminants are cleaned from the surface of a body in space by generating a substantially space-charge neutral reactive plasma, directing the plasma onto the contaminated surface at an energy below the surface sputtering energy (typically 20 eV), and reacting the plasma with the contaminants to remove them. A helicon wave plasma source is made light weight and compact enough for spacecraft use, with a plasma energy low enough to avoid damaging optical surfaces, by using permanent magnets to establish a static axial magnetic field, and a simple but novel rf antenna design. The antenna consists of a pair of spaced conductive rings which extend around the plasma tube, with conductive base and rf feed bars extending between the rings on diametrically opposite sides. The feed bar is interrupted to provide an rf input on opposite sides of the interruption. The antenna is preferably formed as an integral metal unit, with its rings rigidly supported by and integral with opposite ends of the base bar.

Abstract: In a semiconductor device manufacturing apparatus of a reactive ion etching apparatus or the like, only a DC signal in a high frequency electric field can be accurately detected in a real-time manner without any noise, thereby enabling a temperature, a potential, or another parameter of a substrate (wafer) to be accurately measured. For this purpose, according to this manufacturing apparatus, a transmission line filter (coaxial cable) 8 having an electric length ((2n+1).lambda./4) that is an odd-number times as long as 1/4 of the wavelength .lambda. of a high frequency power source 1 is connected between a thermocouple or electrode 7 and a voltmeter 10 to measure a temperature or another parameter of a wafer (substrate) 5. A high frequency signal is separated by the transmission line filter, and a high frequency impedance is short-circuited by a capacitance 9 resulting in the high frequency component being removed, and only a DC signal being provided to the voltmeter 10.

Abstract: Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. The plasma source may include a sapphire or alumina source tube for use with plasmas containing fluorine. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the axis of the plasma source and the substrate process chamber. Preferably a first current is provided through the inner coil and a second current in a direction opposite to the direction of the first current is provided through the outer coil. The inner and outer coils are wrapped with a thin sheet of conducting material to shield the coils from RF signal generated by the plasma source.

Abstract: Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the axis of the plasma source and the substrate process chamber. Preferably, a first current is provided through the inner coil and a second current in a direction opposite to the direction of the first current is provided through the outer coil. The result is to advantageously shape the magnetic field in the process chamber to achieve extremely uniform processing, particularly when a unique diamond shaped pattern of gas feed lines is used wherein the diamond is arranged to be approximately tangent at four places to the outer circumference of the workpiece being processed in the apparatus.

Abstract: Contaminants are cleaned from the surface of a body in space by generating a substantially space-charge neutral reactive plasma, directing the plasma onto the contaminated surface at an energy below the surface sputtering energy (typically 20 eV), and reacting the plasma with the contaminants to remove them. A helicon wave plasma source is made light weight and compact enough for spacecraft use, with a plasma energy low enough to avoid damaging optical surfaces, by using permanent magnets to establish a static axial magnetic field, and a simple but novel rf antenna design. The antenna consists of a pair of spaced conductive rings which extend around the plasma tube, with conductive base and rf feed bars extending between the rings on diametrically opposite sides. The feed bar is interrupted to provide an rf input on opposite sides of the interruption. The antenna is preferably formed as an integral metal unit, with its rings rigidly supported by and integral with opposite ends of the base bar.

Abstract: Apparatus for the simultaneous plasma assisted chemical vapor deposition of thin film material onto an elongated web of substrate material at a plurality of discrete spatially separated deposition zones. In order to accomplish said simultaneous deposition, the web of substrate material is operatively positioned so as to assume a serpentine path of travel through a reduced pressure enclosure. By using an elongated linear applicator as a source of microwave energy, a high rate of uniform deposition of said thin film material over a plurality of large areas of the web of substrate material can be simultaneously achieved without heating of said web above the melting point thereof. In a preferred embodiment, the web of substrate material is formed of a low temperature, microwave transmissive synthetic plastic resin and the thin film material deposited thereupon forms a barrier coating for preventing oxygen diffusion therethrough.

Abstract: A radio frequency electron cyclotron resonance (RF.multidot.ECR) plasma etching apparatus in which electron cyclotron resonance is caused to occur by radio frequency waves of 100-500 MHz introduced in by an antenna. The antenna is disposed within a plasma-producing chamber and connected to a coaxial cable for introducing the radio frequency waves. A plurality of permanent magnets are provided for producing magnetic fields that perpendicularly intersect electric fields produced around the antenna within the plasma-producing chamber. A process gas forms plasma to the electron cyclotron resonance phenomena resulting from the electric fields generated by the radio frequency waves and the magnetic fields perpendicularly intersecting the electric fields in the plasma-producing chamber. The plasma thus produced is applied to the substrate for etching.

Abstract: A plasma reactor for performing an etching or deposition method, said reactor including a vacuum enclosure designed to receive a substrate to be treated, and including means for inserting a gas to be ionized, the plasma, which is produced in a container, being excited by an antenna fed by a radio-frequency power generator, wherein said antenna is composed of an electrical conductor that constitutes a single circular loop having two diametrically-opposite points connected to feed conductors.

Abstract: An improved plasma enhanced chemical vapor deposition (CVD) reactor is provided for the synthesis of diamond and other high temperature materials such as boron nitride, boron carbide and ceramics containing oxides, nitrides, carbides and borides, or the like. An aspect of the present method enables a plasma to substrate distance to be optimized for a given surface. This has been found to enable a substantially uniform thin film coating or diamond or lake material to be deposited over a substrate.