Abstract: A plasma processing system for processing a substrate is disclosed. The system includes a process component capable of effecting a plasma inside a process chamber. The system also includes a gear drive assembly for moving the process component in a linear direction during processing of the substrate.

Abstract: A composite layer of a sorbent, chemoselective, non-electrically-conducting polymer and nano-particles of an electrically conducting material dispersed throughout the polymer is formed on a substrate by pulsed laser deposition, matrix assisted pulsed laser evaporation or matrix assisted pulsed laser evaporation direct writing.

Abstract: A movable evaporation device, arranged in an evaporation system. The evaporation system has an evaporation chamber and a vacuum system. The vacuum system is connected to the evaporation chamber externally. The evaporation chamber has a rotatable wafer table to fix and rotate a wafer during thin film deposition. The movable evaporation device has several movable evaporation boats to carry evaporation source. Each of the evaporation boat further includes an evaporation boat and a movable arm. The moving arm is connected to a bottom of the evaporation chamber. The moving arms can rotate from 0° to 360°, and the length of the moving arms are determined by the amount and position of the evaporation boats in the evaporation chamber.

Abstract: Disclosed is an electron beam evaporator for installation in a vacuum apparatus which provides for variable positioning during or between applications of a coating. The apparatus has a carrier plate which is a flat hollow body, the top cover plate of which supports the evaporator. The hollow body is disposed over the bore in the tank such that it can be turned about the main axis of the bore. The component assemblies of the electron beam evaporator are vacuum-tight on the cover plate and the connecting lines are carried through the interior of the hollow body to the component assemblies.

Abstract: A supplier of evaporation source material. The evaporation system that uses the source material supplier includes an evaporation chamber and a vacuum extraction system. The vacuum extraction system is connected to the evaporation chamber. The source material supplier, a movable evaporation boat and a wafer holder are housed inside the evaporation chamber. The source material supplier is on one of the sidewalls inside the evaporation chamber. The wafer holder is in the upper portion of the evaporation chamber. The wafer holder is responsible for holding a wafer requiring thin film deposition. The movable evaporation boat is in the lower portion of the evaporation chamber for holding evaporation source material. The source material supplier includes a revolving cassette wheel and a crucible under the cassette wheel. The revolving cassette wheel is partition by separating plates and an outer casing into a plurality of capsules with each capsule capable of holding a fixed amount of evaporation source material.

Abstract: A linear drive assembly for moving a body associated with processing a substrate is disclosed. The linear drive assembly includes a first gear and a second gear, which is operatively engaged with the first gear. The linear drive assembly further includes a positioning member having a first portion and a second portion. The first portion is movably coupled to the second gear in a linear direction, and the second portion is fixed to a component associated with processing a substrate.

Abstract: An improved crucible cover for multiple pocket electron beam sources has been invented. The invention provides selection between one of the multiple pockets for evaporative heating and a noncontacting, line-of-sight blocking baffle between heated and unheated pockets. In one embodiment, the baffle is formed by the cooperation of a crucible surface groove with a cover feature that extends into the groove. In a second embodiment, the baffle is formed by a barrier extending upwards from the crucible surface between pockets that cooperates with a cover to form the line-of-sight baffle. The crucible and cover in these embodiments accommodate deposits without hindering the ability of the baffle to reduce contamination or interfere with the operation of the source. Additionally, the cover and crucible may be operated separately, with a cover lifting mechanism that lowers the cover to form a baffle and raises the cover to allow the separately controlled rotation of the crucible.

Abstract: A manufacturing device of an optical recording medium having a plurality of recording layers formed on a substrate is provided. The manufacturing device includes a vacuum pre-treatment chamber(52), a plurality of recording layer forming chambers (54, 56) each for forming a recording layer by vapor-depositing an organic pigment material, a reflective layer forming chamber (58), and a vacuum post-treatment chamber (60). Each of the recording layer forming chambers has at least one recording layer forming unit (84, 86), and the reflective layer forming chamber has at least one reflective layer forming unit (88).

Abstract: The invention relates to a device, in particular for a laser-induced vacuum are discharge evaporator for depositing of multiple layers with a high level of purity and high deposition rates on large-area components. According to the invention, the material source for the coating material is in a source chamber which can be evacuated and can be separated in a vacuum-tight manner from the actual coating chamber in which the substrate to be coated is located. The evaporator can, in particular, be used for deposition of amorphous carbon layers which are hydrogen-free and superhard and/or which contain hydrogen, in conjunction with high-purity metal layers or for the reactive plasma-enhanced deposition of, for example, oxidic, carbide, nitride hard material layers of ceramic layers or a combination thereof. The corresponding plasma sources can be flange-mounted on any suitable coating chambers and, consequently, also combined with conventional coating processes, for example magnetron sputtering.

Abstract: Several techniques may be used for forming a colored interference filter coating on a substrate such as polyester film. The interference filter has two metal reflective films, at least one of which is semi-transparent. A layer of transparent acrylate polymer dielectric between the metal layers completes the interference filter, which may be sandwiched between protective layers. The dielectric is formed by evaporating an acrylate monomer having a molecular weight in the range of from 150 to 600. Preferably the acrylate monomer has a molecular weight to acrylate group ratio in the range of from 150 to 400. The acrylate condenses on the substrate and is polymerized in situ for forming a monolithic film with a sufficient thickness to produce an interference color. In several embodiments different areas of the film have different thicknesses for producing different interference colors.

Abstract: An apparatus for forming a film having high uniformity in its film thickness distribution is provided. An evaporation source is used in which an evaporation cell, or a plurality of evaporation cells, having a longitudinal direction is formed, and by moving the evaporation source in a direction perpendicular to the longitudinal direction of the evaporation source, a thin film is deposited on a substrate. By making the evaporation source longer, the uniformity of the film thickness distribution in the longitudinal direction is increased. The evaporation source is moved, film formation is performed over the entire substrate, and therefore the uniformity of the film thickness distribution over the entire substrate can be increased.

Abstract: An electron beam evaporator, which is formed of the component assemblies: beam generator, deflection system and water-cooled crucible/rotary crucible, is fastened on the cover plate of a flat hollow body.

Abstract: An apparatus and method for improving the performance of a vacuum coating system includes a vacuum chamber enclosing a track. The track is substantially rectangular having a top surface and a bottom surface. A pair of legs are attached to the bottom surface of the track and support the track within the vacuum chamber. The legs have a top edge engaging the bottom surface of the track and a bottom edge secured to a bottom section of the vacuum chamber. The legs extend longitudinally along the bottom surface of the track. A rail is mounted on the top surface of the track and extends along a longitudinal axis of the track. A substantially planar platter having a top face and a bottom face is supported on top of the rail. The platter is adapted to slide from side to side along the rail across the length of the track. A stage carrying an electron beam evaporator is mounted on the top face of the platter. As such, the electron beam evaporator slides with the platter across the length of the track.

Abstract: A forming apparatus of a thin film, includes a processing chamber where a predetermined process is carried out on a surface of a supplied substrate, and a feeding device, which is provided in the processing chamber, for feeding material to form an organic molecular layer including silicon or germanium on the surface of the substrate. A forming method of a thin film, includes steps of forming a thin film on a surface of a supplied substrate in a processing chamber, and feeding material for forming an organic molecular layer including silicon or germanium on the formed thin film on the surface of the substrate through a feeding device in the processing chamber, and then forming the organic molecular layer on the surface of the substrate.

Abstract: A process for vapor depositing an evaporant onto a substrate is provided which involves:presenting the substrate to a deposition chamber, wherein the deposition chamber has an operating pressure of from 0.001 Torr to atmospheric pressure and has coupled thereto a carrier gas stream generator and an electron beam gun capable of providing an electron beam at the operating pressure and contains an evaporant source;impinging the evaporant source with the electron beam to generate the evaporant;entraining the evaporant in the carrier gas stream; andcoating the substrate with the carrier gas stream which contains the entrained evaporant, and an apparatus for performing the process.

Abstract: A laser ablation deposition system includes a movable platform for supporting ferroelectric target material and a support structure for supporting a thermally sensitive semiconductor substrate within a chamber mounted on a moveable cabinet, and a laser for ablating the material mounted on a support frame along with various control components. The cabinet with the chamber may be moved away from the laser and support frame to allow the chamber to be raised to provide access to the components within the chamber. The system may be used to fabricate a multilayer thin film device using multicomponent oxides.

Abstract: A method for manufacturing solar cells, more specifically thin-film solar cells, particularly thin-film solar cells on which CuInSe.sub.2 is deposited. A substrate is provided on which a multi-layer structure is formed by depositing thereon a layer defined by a compound including several basic substances, such as copper-indium-diselenide (CuInSe.sub.2), or a closely-related compound where copper (Cu) and indium (In) can be replaced totally or partially with Silver (Ag) and gallium (Ga), respectively, and where selenium (Se) can be replaced totally or partially with sulphur (S) and tellurium (Te), and where the concentration of the basic substances in the layer varies. The substrate is placed on the inside of a rotatable, tubular carrier device, after which the substrate is heated, and substance sources are provided for depositing the basic substances on the substrate.

Abstract: A semiconductor wafer processing apparatus or module for a cluster tool is provided with a single wafer rotating susceptor that thins the gas boundary layer to facilitate the transfer of material to or from the wafer, in, for example, CVD for blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead directs a gas mixture from a cooled mixing chamber onto a rapidly rotating wafer, for example at from 500 to 1500 RPM, thinning a boundary layer for gas flowing radially outwardly from a stagnation point at the wafer center. Smoothly shaped interior reactor surfaces include baffles and plasma cleaning electrodes to minimize turbulence. Inert gases from within the rotating susceptor minimize turbulence by filling gaps in structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor.

Abstract: Source evaporation machine for covering samples optionally by a mixture produced by several sources (3).Mobile covers (6) are placed between the sources (3) and the sample. The covers (6) are designed so as to ensure that the solid parts (23,24) and the openings (21,25) alternate and the sources (3) move relative to the covers in such a way that different circumferences of the covers pass in front of them. As the angular sectors surrounded by the openings differ for each circumference, the degree of hiding of the sources (3) can be regulated in a very accurate and reliable manner. It is possible to modify the flow of the source on the sample or, in the case of several sources, vary the composition of the deposited mixture.

Abstract: Apparatus and method for increasing the time that a quartz crystal can sense the rate at which evaporated material is broadcast onto a substrate wherein a chopper employing a disk with a slot is disposed between the source of the evaporated material and the crystal to reduce the exposure of the crystal to evaporated material to a fraction of the time that the substrate is exposed wherein the chopper frequency is not in tune with the dither frequency of the material evaporator. Barrier means prevents the chopper slot from significantly changing dimensions due to the build up of material on its defining edges, while shield means prevents the a crystal from being exposed to evaporated material from a source that it does not control.

Abstract: A process and apparatus for the substantially continuous manufacture of a silicon oxide deposition film on a traveling flexible plastic film. The process comprises evaporating a deposition material composed mainly of silicon and silicon oxide or silicon oxide alonem by heating to continuously form a deposition layer composed mainly of silicon oxide and having a thickness of from 100 to 3,000 .ANG. on the surface(s) of a travelling flexible plastic film, wherein a material shaped from the above deposition material is evaporated by heating while the material is supplied to a heat evaporating portion substantially continuously, and an evaporation residue is discharged from the heat evaporating portion substantially continuously.

Abstract: To deposit a plurality of substances on a substrate while the substrate remains in a low pressure oxygen environment, several target carriers are mounted around the edge of a disc and the disc is rotated to position the targets at the focal point of a fixed laser. The target carriers are themselves rotatable in bearings on the disc and are turned by a sun gear that is carried about the same shaft that turns the disc so that the heat of the laser beam is not concentrated at one spot on the surface of the target. All the apparatus is contained in a oxygen chamber. The substrate is heated and the targets are cooled continuously.

Abstract: A vacuum coating apparatus for coating films on the surfaces of objects to be deposited under vacuum is provided with a vacuum deposition chamber, a carrier accommodated in the vacuum deposition chamber for carrying the objects, a rotary mechanism extending through the vacuum deposition chamber and being rotatable with respect to the carrier, and a container mounted on the rotary mechanism and accommodated in the vacuum deposition chamber. The container accommodates a material to be evaporated and is rotated by the rotary mechanism during a deposition operation while the objects are maintained stationary.

Abstract: A method of producing finely divided particles or powder, vapor or fine droplets comprises the steps of heating and melting the starting raw material in a vessel having opposed reflecting surfaces, and ejecting the melted raw material from the vessel as heated finely divided particles or powder, vapor or fine droplets, by introducing a carrier gas into the vessel.

Abstract: Two heat-resistant rollers are located close to each other such that rotation shafts of the two heat-resistant rollers are approximately parallel to each other, and parts of the two heat-resistant rollers are immersed in a deposition material, which has been molten in a crucible. The two heat-resistant rollers are rotated in opposite directions. Parts of the molten deposition material are entrained by the circumferential surfaces of the two heat-resistant rollers, and a concave part of the molten deposition material is formed at a region, at which the entrained parts of the molten deposition material come into contact with each other. An electron beam is irradiated to the concave part of the molten deposition material.

Abstract: A laser vapor deposition apparatus includes a vacuum chamber which includes an exhaust port and in which a material to be vaporized and a substrate are enclosed, a laser beam source for irradiating the material to be vaporized with a laser beam so as to deposit from the material a desired compound onto the substrate, and a gas supply source which supplies to the surface of the material, a gas that can prevent changes in property of the material which could be caused by the laser beam irradiation.

Abstract: In an apparatus for applying dielectric or metallic substances, such as silicon dioxide, for example, to a substrate (15) disposed in a vacuum chamber (16, 17), the apparatus having an electron emitter (9) and having solenoid coils (30, 42) disposed in the area of the vacuum chamber, the electron emitter (9) is disposed in a separate generator chamber (37) forming the anode (11) and communicating with the vacuum chamber (17), so that, after the process gas is introduced into the generator chamber (37) a large-area plasma jet (8) is produced which is guided by the action of magnets (6, 20, 30, 42) between the electron emitter (9) and a melting furnace (7) disposed in the vacuum chamber (17), while the vapor stream issuing from the melting furnace (7) is accelerated and reaches the substrate (15) as activated vapor.

Abstract: A laser sputtering apparatus includes a vacuum chamber, a laser for radiating a laser beam, a vacuum sealing window arranged at the chamber for introducing the beam into the chamber, a film transporting device for transporting a film while the film is passing near the window and a substrate holder arranged opposite to the window with the film therebetween for holding a substrate. The film has high laser transmission and a surface over which material for a thin film to be formed on the substrate is deposited. The device transports the film while the surface of the film is opposed to the substrate. The laser beam sputters the material on the thin film onto the substrate.

Abstract: Piezo-electric oscillators are widely used in reference clocks for various apparatus. Prior to use, the oscillation frequency of the piezo-electric oscillators is generally finely adjusted. For this purpose, a frequency fine-adjusting apparatus includes a laser beam generator for emitting a laser beam having a wavelength of 2 .mu.m or less, a target material having a metallic layer, a set of rollers for feeding the target material in the condition in which the metallic layer confronts the main electrode of the piezo-electric oscillator and is spaced a predetermined length from the main electrode, and an optical system for applying the laser beam to the metallic layer. When the laser beam is applied to the metallic layer, part of the metallic layer is vaporized and adheres to the surface of the main electrode, thereby finely adjusting an oscillation frequency of the piezo-electric oscillator.

Abstract: An apparatus for the treatment of wafers in the manufacture of semiconductor elements in the form of a process buffer through which a plurality of wafers travel at the same time to various treatment stations and which cooperates with a transport apparatus for the wafers. The apparatus has a shaft magazine, in which the treatment stations, each for one wafer, are disposed spaced apart from and above one another. The shaft magazine is provided with a loading and unloading opening, and the treatment stations are movable individually into the vicinity of the loading and unloading opening. The apparatus occupies less surface area in the process line for the manufacture of semiconductor elements, enables treatment of the wafers independent of external factors, and can be used for various types of treatment of the wafers in the manufacture of semiconductor elements.

Abstract: In order to radically improve the efficiency of evaporators used in vacuum foil coating plants wherein reactive metals such as Al, Ni, Fe and the like are being evaporated, a radiation heater heated up to about 2500.degree. C. is placed in a cavity, the inner wall surface of which carries the liquid evaporant. The liquid evaporant is evaporated and energized by the radiation heater emitting high energy photons and also electrons. The high energy vapor is directed in a beam and reduces evaporant waste caused by stray deposits, and also forms a denser metallic coating on a moving foil being metallized.

Abstract: A material source replenishment device for use with a vacuum deposition apparatus. The source replenishment device comprises an intermittent motion producing gear arrangement disposed within the vacuum deposition chamber. An elongated rod having one end operably connected to the gearing arrangement is provided with a multiarmed head at the opposite end disposed adjacent the heating element of the vacuum deposition apparatus. An inverted U-shaped source material element is releasably attached to the outer end of each arm member whereby said multiarmed head is moved to locate a first of said material elements above said heating element, whereupon said multiarmed head is lowered to engage said material element with the heating element and further lowered to release said material element on the heating element. After vaporization of said material element, second and subsequent material elements may be provided to the heating element without the need for opening the vacuum deposition apparatus to the atmosphere.

Abstract: An apparatus and method for performing liquid phase epitaxy, mercury containment, substrate leveling, in situ annealing/doping and gas flushing in a liquid phase epitaxy growth of HgCdTe. The apparatus is a self contained unit comprising a transparent cover for providing access to the interior of the apparatus and for forming a gas impermeable seal between the apparatus and the cover. The apparatus also contains a leveling apparatus, a gas flushing apparatus, and an apparatus for the in situ doping/quench annealing of HgCdTe epitaxial films. The leveling apparatus comprises channels and leveling balls that travel therein which align themselves between scribe marks when the apparatus is in a level position. The gas flushing apparatus is comprised of a gaseous purge ball valve that opens and seals a flushing channel that leads from the interior of the invention to the external environment.

Abstract: A vapor source for a vacuum-coating installation comprises a rotatably mounted vaporizing crucible, a drive motor and a device, preferably an electron beam gun, for heating the material to be vaporized, all arranged in one structural unit, movable as a whole in the coating installation. With this, the site of the vaporization for a given layer-thickness distribution can be selected optimally to correspond to the respective applications.

Abstract: In a vacuum vapor-deposition system a substrate holder is arranged stationary in the main part of a vapor-deposition chamber. Evaporation apparatuses are arranged on the floor of the vapor-deposition chamber, which is moveably connected to the main part of the vacuum-deposition chamber via a bellows and can swivel about two mutually intersecting axes or be displaced along two mutually intersecting axes with respect to the main part by means of two drive mechanisms. In this way the thermostatization of the substrate and the production of very uniform layers is facilitated.

Abstract: A vacuum vapor depositing system in which a plurality of vapor delivering nozzles fit between, and are guided by, bars supplying inert gas as barrier regions controlling the lateral spread of the vaporized material being deposited.

Abstract: A drying oven is disclosed including apparatus for transporting a shuttle (51) longitudinally in a drying conduit (5) arranged within an oven, characterized in that the transporting apparatus is at least partially contained within a housing (15) that hermetically seals one end of the drying conduit. The transporting apparatus includes a steel band (27) that is wound at one end of a disk (39) mounted for rotation within the housing, the other end of the band being releasably coupled with the shuttle by a pivotable latch (25).

Abstract: A crucible is disclosed for use in molecular beam epitaxial processing exhibiting low flux transient behavior as shutters of individual furnaces are opened to initiate the process and with excellent flux uniformity over the surface being processed and over the processing time. The crucible is designed for liquid melts of Group III metals, including Gallium, Indium, and Aluminum.The crucible comprises a two member construction in which the outer member, which contains the melt, is typically cylindrical and of maximum capacity consistent with the furnace interior, and an inner member having a conical configuration with a small aperture at the bottom for optimum molecular beam formation. The conical member increases the thermal impedance between the melt surface and the interior of the MBE system to reduce the flux transient and increases the uniformity of the molecular beam over the area being processed, and over the time that the process is being conducted.

Abstract: An evaporator device system having an electron jet heating device for the vaporization of several materials onto a substrate in a vacuum chamber includes at least two crucibles for the reception of respective evaporation materials. These crucibles are concentrically arranged on a turntable. For the more uniform evaporation of the material, at least the crucible aligned with the electron jet is caused to rotate in the turntable during operation of the eletron jet heating device.

Abstract: A vacuum evaporation device incorporates a main treatment enclosure connected to an auxiliary chamber containing a material evaporation cell. The cell is fixed to a tight bellows displacement member able to displace the cell between a first advanced position towards a main enclosure and a second retracted position. A sealing valve provided with a slide is provided for the main enclosure from the auxiliary chamber, whereby the material of the evaporation cell can thus be changed without placing the main enclosure under atmosphere again. A fixed heating tube, connecting the main enclosure to the auxiliary chamber, has a first end engaged in the main enclosure and a second end issuing into the auxiliary chamber. The second end is provided with an end piece made from a thermally insulating material ensuring mechanical continuity and thermal insulation with the support part and able to bearingly receive the evaporation cell when the latter is in the advanced position.

Abstract: A silicon crucible for use in holding a silicon melt in the drawing of silicon bars for the production of silicon wafers in the semiconductor industry is provided with a protective coating, e.g. of silicon nitride, by the use of a vapor generator in which granules of a low electrical conductivity and low thermal conductivity material are disposed between a pair of electrodes and an electric current is supplied with induces localized vaporization from the granules at their contact points but without bodily melting the granules. Nitrogen can be applied to the mass as a carrier gas and to react with the silicon vapor thus formed.

Abstract: A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

Abstract: A method for controlling the slope of the edge gradient of a layer of vapor deposition material onto a substrate from an evaporation source of vapor deposition material comprising the steps of forming a flux of vapor deposition material having an effective source cross-sectional area and shape from an evaporation source of a vapor deposition material located at a known position, indexing a deposition mask having a plurality of apertures extending therethrough such that the mask is in a spaced relationship from the source defining a source-to-mask distance and positioned in the flux of vapor deposition material to permit the flux of vapor deposition to pass through the apertures, registering a substrate in a spaced relationship from the deposition mask defining a mask-to-substrate distance to permit the flux of the vapor deposition material passing through the apertures in the deposition mask to impinge onto the substrate forming a layer of vapor deposit material thereon, controlling at least one of the effect

Abstract: When growing GaAs by molecular beam epitaxy (MBE), a typical related reaction acts to affix Ga.sub.2 O.sub.3 to the growth surface and hence incorporates such oxide contaminants in the epitaxial layer as it is grown. Such contaminants may yield crystals of poor electrical and optical properties. When Al is added to the Ga source crucible, the Ga.sub.2 O flux is reduced substantially thereby suppressing the formation of such oxide contaminants and remove a serious constraint to MBE growth. When doping GaAs with Mg to form a p-type GaAs layer, unity Mg doping efficiency is achieved by including 0.1% Al in the Ga effusion cell. Such an inclusion of Al improves the Mg doping efficiency by suppressing the formation of MgO, and allows MBE growth at lower substrate temperatures and at higher growth rates.

Abstract: A vacuum vapor-deposition installation for batchwise operation has a horizontal valve chamber which is arranged in the middle and on which are fitted, by way of suitable openings, a top vaporizing chamber and a lower evaporizing chamber. The two openings are aligned with each other and can be sealed simultaneously in a vacuum-tight manner by a two-way valve movable horizontally in the valve chamber. For the purpose of charging the vaporizing chamber with substrates, this chamber can be lifted from the valve chamber. To solve the problem of increasing the number of production cycles per unit of time, the interior of the evaporizing chamber is accessible from the exterior without interrupting the vacuum in the valve chamber. This measure renders it unnecessary to charge the evaporizer in the evaporizing chamber through the valve chamber, for which purpose the entire chamber would have to admit air.

Abstract: A vaporizer for vacuum deposition installations has at least one crucible and a plurality of crucible-receiving recesses movable into a vaporizing position, a vapor-conducting device and a shutter for interrupting the flow of vapor. The vaporizer is capable of enabling a plurality of different substances to be vaporized in succession without mutual contamination by providing the vapor-conducting device wherein the device has a plurality of vapor screens which can be individually set down at the edges of the crucible-receiving recesses by relative movement between the vapor-conducting device and the crucible. The shutters have a plurality of lobes which can be individually moved over the particular vapor screen located in the vaporizing position. The drives associated with the vapor-conducting device and shutter are interconnected such that the same vapor screen and the same shutter lobe are always associated with a particular crucible-receiving recess.

Abstract: A machine for vapor coating a workpiece with a coating metal supplied in wire form includes a vessel enclosing a vacuum chamber and having a door for providing access to the vacuum chamber. The vessel is connected with a vacuum pump for evacuating the vacuum chamber. Mounted within the vacuum chamber is a rack having an attachment screen which is electrically isolated from the remainder of the vessel so that the screen may be placed at a DC potential significantly higher than the vessel. When the door of the vessel is open, the rack may be withdrawn from the chamber for loading the workpiece thereon. The chamber also contains a carriage that moves from one side of the chamber to the other beneath the rack, and the carriage has a plurality of evaporator units mounted along it. Each evaporator unit includes a trough-like boat and means for feeding the coating metal wire into the boat.

Abstract: A vacuum metallizing apparatus for coating hollow articles such as tap bodies includes a carrier defining a shallow cylindrical chamber which is arranged for connection to a high vacuum source through valves. The carrier provides a plurality of ports with seatings in each of which a hollow article may be received with the interior of the article opening to the chamber. A filament assembly is mounted inside the chamber for rotation so that during evaporation of the coating metal on the filament, the filament sweeps past each port while the chamber including the interior of each hollow article is at high vacuum. Two different types of carrier are described, and a double or alternating type of arrangement of the carriers is described as well.