Rotary Patents (Class 118/730)
  • Patent number: 11014853
    Abstract: A chamber component for a processing chamber comprises a ceramic body consisting of a sintered ceramic material consisting essentially of one or more phase of Y2O3—ZrO2. The ceramic material consists essentially of 55-65 mol % Y2O3 and 35-45 mol % ZrO2.
    Type: Grant
    Filed: February 19, 2019
    Date of Patent: May 25, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jennifer Y. Sun, David Fenwick
  • Patent number: 10998220
    Abstract: The substrate holding/rotating device includes a plurality of movable pins each having a support portion in contact with a peripheral edge portion of the substrate to support the substrate, and a rotation unit which rotates the plurality of movable pins around the rotation axis, a support portion of each of the movable pins included in a first pin group is disposed so as to move between a first hold position included hold positions, the first hold position close to a rotation axis and a second hold position included the hold positions, the second hold position far apart from the first hold position to one in a circumferential direction and also so as to move between the first and second hold positions and an open position far apart from the rotation axis.
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: May 4, 2021
    Inventors: Hiroaki Ishii, Ryo Muramoto
  • Patent number: 10844491
    Abstract: A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: November 24, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sukjin Chung, JongCheol Lee, MinHwa Jung, Jaechul Shin, In-Sun Yi, Geunkyu Choi, Jungil Ahn, Seung Han Lee, Jin Pil Heo
  • Patent number: 10818534
    Abstract: An embodiment of a substrate treatment device may comprise: a disk provided to be able to rotate; at least one susceptor arranged on the disk, a substrate being seated on the upper surface of the susceptor, the susceptor rotating, as the disk rotates, and revolving about the center of the disk as the axis; a metal ring coupled to the lower portion of the susceptor and arranged such that the center of the metal ring coincides with the center of the susceptor, and a magnet arranged radially on the lower portion of the disk with reference to the center of the disk and provided such that at least a part of the magnet faces the metal ring in the up/down direction.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: October 27, 2020
    Assignee: JUSUNG ENGINEERING CO., LTD.
    Inventors: Ki Bum Kim, Seung Youb Sa, Ram Woo, Myung Jin Lee, Seung Dae Choi, Jong Sung Choi, Ho Boem Her
  • Patent number: 10811245
    Abstract: The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: October 20, 2020
    Assignee: Rayton Solar Inc.
    Inventors: Andrew X. Yakub, James Benjamin Rosenzweig, Mark Stanley Goorsky
  • Patent number: 10752993
    Abstract: Provided is a substrate processing apparatus and substrate processing method for depositing a thin film on a substrate. The substrate processing apparatus may include a chamber, a susceptor rotatably mounted in the chamber, at least one satellite mounted on the susceptor, configured to place a substrate thereon, and capable of being floated and rotating due to pressure of a gas supplied through the susceptor, to rotate the substrate, and of revolving due to rotation of the susceptor, and a cart lifting module including a cart mounted on the susceptor around the satellite and supporting an edge of the substrate to take over the substrate and place the substrate on the satellite, and a cart lifting device capable of lifting and lowering the cart.
    Type: Grant
    Filed: October 17, 2017
    Date of Patent: August 25, 2020
    Assignee: WONIK IPS CO., LTD.
    Inventors: Wook Sang Jang, Sang Jun Park, Ho Young Lee
  • Patent number: 10731253
    Abstract: A gas injector used for semiconductor equipment includes a housing shell, a rotating main shaft and a gas output distribution unit. The rotating main shaft is covered with the housing shell, and includes a plurality of magnetic fluid seals and a plurality of gas transmission tubes. The gas output distribution unit is coupled to a top end of the rotating main shaft, the gas output distribution unit being connected to a ceiling and a susceptor. The gas output distribution unit includes a plurality of boards spaced at intervals between the ceiling and the susceptor, thereby resulting in a plurality of gas output layers for outputting corresponding reaction gases.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: August 4, 2020
    Assignee: Hermes-Epitek Corporation
    Inventors: Tsan-Hua Huang, Kian-Poh Wong, Chia-Ying Lin
  • Patent number: 10718052
    Abstract: A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: July 21, 2020
    Assignee: Veeco Instruments, Inc.
    Inventors: Louise S. Barriss, Richard A. Comunale, Roger P. Fremgen, Alexander I. Gurary, Todd A. Luse, Robert White Milgate, John D. Pollock
  • Patent number: 10720312
    Abstract: A substrate processing apparatus includes: a substrate holder to vertically load a plurality of substrates in multiple stages with an interval therebetween and including a plurality of partition plates vertically partitioning a region where the plurality of substrates are loaded; a process chamber to receive the substrate holder therein; protrusions protruding inward toward the outer circumferential surfaces of the partition plates from an inner circumferential wall surface within the process chamber, which faces the outer circumferential surfaces of the partition plates, to form clearances between inner circumferential surfaces formed on the protruding tip ends of the protrusions and the outer circumferential surfaces of the partition plates; and a gas supply part to supply inert gas into the clearances, which are formed between the inner circumferential surfaces of the protrusions and the outer circumferential surfaces of the partition plates, to form positive-pressure sections subjected to a pressure highe
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: July 21, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiromi Nitadori, Satoru Koike
  • Patent number: 10683573
    Abstract: A film forming apparatus of forming a film by supplying a process gas onto a substrate includes a rotation table having a loading region and is configured to revolve the substrate loaded on the loading region; a process gas supply mechanism configured to supply the process gas to a gas supply region to perform film formation on the substrate repeatedly passing through the gas supply region a plurality of times by revolution of the substrate; a first gear disposed on the other surface side of the rotation table and rotated in a rotation direction of the rotation table; a second gear configured with planetary gears engaging with the first gear, disposed to be revolved together with the loading region, and configured to rotate the loading region so as to allow the substrate to be rotated.
    Type: Grant
    Filed: November 10, 2015
    Date of Patent: June 16, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hitoshi Kato, Shigehiro Miura, Hiroyuki Kikuchi, Katsuyoshi Aikawa
  • Patent number: 10522387
    Abstract: An embodiment is an apparatus. The apparatus includes: a collective wafer platter including a plurality of individual wafer pockets, the individual wafer pockets having respective individual wafer platters, the individual wafer platters configured to rotate around respective first axes, the collective wafer platter configured to rotate around a second axis; a motor coupled to the collective wafer platter; and a control unit configured to control the motor such that the individual wafer platters rotate around the respective first axes, and the collective wafer platter rotates around the second axis.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: December 31, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Yung-Chang Chang
  • Patent number: 10508362
    Abstract: A substrate mounting member according to the present invention is a member for mounting a SiC substrate for epitaxial growth, which includes a wafer plate including a SiC polycrystal, and a supporting plate configured to be placed on the wafer plate, include no SiC polycrystal and have a surface serving as a SiC substrate placing surface, the surface being on the side opposite to a surface in contact with the wafer plate, and in which a thickness h [mm] of the supporting plate satisfies an expression h4?3 pa4(1?v2){(5+v)/(1+v)}/16E when a force applied to a unit area of the supporting plate by a self-weight of the supporting plate and by the SiC substrate is represented as p [N/mm2], a radius of the supporting plate as a [mm], a Poisson's ratio as v and a Young's modulus as E [MPa].
    Type: Grant
    Filed: November 22, 2016
    Date of Patent: December 17, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kenichi Hamano, Hiroaki Sumitani
  • Patent number: 10507488
    Abstract: A deposition apparatus includes a dome rotatable around the central axis; a loop chain surrounding the central axis on the dome; a power transmission shaft transmitting rotational motion of the dome; a first gear section transforming the rotational motion of the dome to rotational motion of the shaft; a second gear section provided with a chain-driving sprocket and configured to transform the rotational motion of the shaft to rotational motion of the sprocket; and a tray holder located beside the loop chain, the tray holder including a first internal power transmission shaft and a rotating portion holding a tray. The sprocket is rotated through the rotation of the dome to drive the loop chain, the first internal power transmission shaft of the tray holder is rotated by motion of the loop chain, and the rotating portion is rotated through rotation of the first internal power transmission shaft.
    Type: Grant
    Filed: April 11, 2016
    Date of Patent: December 17, 2019
    Assignee: NALUX CO., LTD.
    Inventors: Toshiro Higuchi, Hiroshi Ueno, Hitoshi Kimura
  • Patent number: 10262888
    Abstract: Apparatus and method for processing a plurality of substrates in a batch processing chamber are described. The apparatus comprises a susceptor assembly, a lift assembly and a rotation assembly. The susceptor assembly has a top surface and a bottom surface with a plurality of recesses in the top surface. Each of the recesses has a lift pocket in the recess bottom. The lift assembly including a lift plate having a top surface to contact the substrate. The lift plate is connected to a lift shaft that extends through the susceptor assembly and connects to a lift friction pad. The rotation assembly has a rotation friction pad that contacts the lift friction pad. The rotation friction pad is connected to a rotation shaft and can be vertically aligned with the lift friction pad.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: April 16, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal Gangakhedkar, Joseph Yudovsky
  • Patent number: 10216229
    Abstract: Provided is a method of manufacturing a flexible display apparatus. The method includes: arranging a film over a window having a three-dimensional curved surface shape, the film being flexible; arranging a plurality of pressure balls over the film; and pressing the plurality of pressure balls towards the window by using a pressure plate such that the film is closely adhered onto the window according to the three-dimensional curved surface shape of the window.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: February 26, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Gunmo Kim, Wonsang Park, Jongsung Bae
  • Patent number: 9976216
    Abstract: A thin film deposition system for depositing a thin film on a moveable substrate using atmospheric pressure atomic-layer deposition includes a chamber and a moveable substrate having a levitation stabilizing structure located on the moveable substrate that defines an enclosed interior impingement area of the moveable substrate. A stationary support, located in the chamber, supports the moveable substrate. The stationary support extends beyond the enclosed interior impingement area. A pressurized-fluid source provides a fluid flow through the stationary support that impinges on the moveable substrate within the enclosed interior impingement area of the moveable substrate sufficient to levitate the moveable substrate and expose the moveable substrate to the fluid while restricting the lateral motion of the moveable substrate with the levitation stabilizing structure.
    Type: Grant
    Filed: September 8, 2016
    Date of Patent: May 22, 2018
    Assignee: EASTMAN KODAK COMPANY
    Inventors: Kurt D. Sieber, Kam Chuen Ng, Ronald Steven Cok
  • Patent number: 9929304
    Abstract: An apparatus for forming a solar cell includes a housing defining a vacuum chamber, a rotatable substrate support, at least one inner heater and at least one outer heater. The substrate support is inside the vacuum chamber configured to hold a substrate. The at least one inner heater is between a center of the vacuum chamber and the substrate support, and is configured to heat a back surface of a substrate on the substrate support. The at least one outer heater is between an outer surface of the vacuum chamber and the substrate support, and is configured to heat a front surface of a substrate on the substrate support.
    Type: Grant
    Filed: April 14, 2015
    Date of Patent: March 27, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Edward Teng, Ying-Chen Chao, Chih-Jen Yang
  • Patent number: 9920418
    Abstract: A physical vapor deposition (PVD) apparatus having a deposition chamber and a source chamber of minimal volume, which can be selectively isolated from each other by a various load-lock valves. Exemplary embodiments can include a tapered high vacuum chamber disposed between the deposition chamber and the source chamber. The pump down time of the apparatus can be reduced, as compared to conventional PVD systems, due to the combined reduced volume of the chambers. Coating uniformity can also be improved by spinning each part to be coated on its' own axis while selectively exposing to a deposition source with minimal particle generation.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: March 20, 2018
    Inventor: James Stabile
  • Patent number: 9637822
    Abstract: A susceptor apparatus for use in a CVD reactor includes a main platter with a central gear. The main platter has opposite first and second sides, a central recess formed in the second side, and a plurality of circumferentially spaced-apart pockets formed in the first side. The central gear is positioned within the central recess and the satellite platters are individually rotatable within the respective pockets. Each pocket has a peripheral wall with an opening in communication with the central recess. The central gear teeth extend into each of the pockets via the respective wall openings and engage a planet gear associated with each satellite platter. Rotation of the main platter about its rotational axis causes the satellite platters to rotate about their individual rotational axes.
    Type: Grant
    Filed: October 8, 2010
    Date of Patent: May 2, 2017
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, David Todd Emerson, David Dean Seibel
  • Patent number: 9598767
    Abstract: A gas processing apparatus includes a process chamber for installing a process target therein, a through-hole being air-tightly in communication with a gas supply pipe, an injector for supplying gas into the process chamber, a sleeve being engaged to an outer peripheral surface of the injector inside the through-hole, an annular sealing member engaged to the outer peripheral surface of the injector, an engagement surface facing the sealing member, and a pressing part for pressing the sleeve toward the outer side of the process chamber. The pressing part compresses the sealing member by exerting pressure to the engagement surface from an end surface of the sleeve toward the sealing member, so that an inside of the injector and an outside of the injector are air-tightly sealed.
    Type: Grant
    Filed: June 12, 2014
    Date of Patent: March 21, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Manabu Honma
  • Patent number: 9382642
    Abstract: The present invention relates to a reaction chamber of an epitaxial reactor that essentially consists of a quartz piece; the quartz piece comprises a quartz piece portion (1) having an internal cavity (2) defined by walls (1A, 1B, 1C, 1D); the cavity (2) comprises a reaction and deposition zone (3) of the epitaxial reactor; the zone (3) is adapted to house a susceptor (4) to be heated therein; the reaction chamber also comprises a quartz component (5) arranged close to said walls (1A, 1B, 1C, 1D) in such a manner as to form a counterwall and to be a wall of said zone (3).
    Type: Grant
    Filed: April 16, 2010
    Date of Patent: July 5, 2016
    Assignee: LPE S.P.A.
    Inventors: Srinivas Yarlagadda, Natale Speciale, Franco Preti, Mario Preti
  • Patent number: 9378992
    Abstract: An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: June 28, 2016
    Assignee: Axcelis Technologies, Inc.
    Inventors: Armin Huseinovic, Joseph Ferrara, Brian Terry
  • Patent number: 9368341
    Abstract: A method of manufacturing a silicon oxide film by using a film deposition apparatus is provided. The apparatus includes a turntable including a substrate receiving part on its upper surface, a first gas supply part to supply a first gas to the turntable in a first process area, and a second gas supply part arranged in a second process area apart from the first process area to supply a second gas. In the method, a silicon-containing gas is supplied from the first gas supply part as the first gas. A hydrogen gas and an oxidation gas are supplied from the second gas supply part as the second gas. The first gas is caused to adsorb on the substrate in the first process area, and the second gas is caused to react with the first gas adsorbed on the substrate in the second process area while rotating the turntable.
    Type: Grant
    Filed: September 9, 2014
    Date of Patent: June 14, 2016
    Assignee: Tokyo Electron Limited
    Inventors: Tatsuya Tamura, Takeshi Kumagai
  • Patent number: 9340875
    Abstract: A reaction device for chemical vapor deposition is disclosed. The reaction device includes a chamber, a susceptor, an inlet pipe unit and an outlet pipe. The susceptor is disposed within the chamber. The inlet pipe unit includes a plurality of feeding openings horizontally facing the peripheral area of the susceptor to input at least one reaction gas into the chamber. The at least one reaction gas is guided to move from the peripheral area of the susceptor and along a surface of the susceptor to reach the center of the susceptor. The outlet pipe includes a discharge opening whose position is corresponding to the center of the susceptor so as to discharge the reaction gas flowing to the center of the susceptor out of the chamber.
    Type: Grant
    Filed: December 4, 2013
    Date of Patent: May 17, 2016
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yi-Tsung Pan, Mu-Jen Young
  • Patent number: 9303318
    Abstract: In one embodiment, an apparatus includes a first gas distribution assembly that includes a first gas passage for introducing a first process gas into a second gas passage that introduces the first process gas into a processing chamber and a second gas distribution assembly that includes a third gas passage for introducing a second process gas into a fourth gas passage that introduces the second process gas into the processing chamber. The first and second gas distribution assemblies are each adapted to be coupled to at least one chamber wall of the processing chamber. The first gas passage is shaped as a first ring positioned within the processing chamber above the second gas passage that is shaped as a second ring positioned within the processing chamber. The gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.
    Type: Grant
    Filed: October 11, 2012
    Date of Patent: April 5, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Tuoh-Bin Ng, Yuriy Melnik, Lily L Pang, Eda Tuncel, Lu Chen, Son T Nguyen
  • Patent number: 9302358
    Abstract: Chamber elements defining a chamber include a first element having a first surface, a second element, a first dynamic seal and load mechanism. The second element includes an outer floating element that includes a second surface about the periphery of the chamber, and an inner floating element. The second surface and the first surface are maintained proximate to each other when the chamber is in a load position and when the chamber is closed. The load mechanism may move the inner floating element from the outer floating element until a gap between the inner floating element and the second element to facilitate loading of the device to the chamber. A movement system may generate relative movement between the first element and the second element.
    Type: Grant
    Filed: July 17, 2013
    Date of Patent: April 5, 2016
    Assignee: Applied Materials Israel, Ltd.
    Inventors: Igor Krayvitz (Krivts), Israel Avneri, Yoram Uziel, Natan Schlimoff, Gilad Schwartz, Yochanan Madmon
  • Patent number: 9297070
    Abstract: The invention relates to a CVD-reactor for depositing layers made of a reaction gas onto workpieces. Said reactor comprises an elongate, vertical reaction chamber that is defined by a reactor wall and a reactor base, an inlet line for guiding the reaction gas into the reaction chamber, entering into the region of the reactor base in the reaction chamber, a central outlet line that guides the used reaction gas out of the reaction chamber and that extends out of the reactor chamber in the region of the reactor base, a tier-like workpiece receiving element that is arranged in a central manner in the reaction chamber and can be rotated about the central axis thereof.
    Type: Grant
    Filed: July 21, 2009
    Date of Patent: March 29, 2016
    Assignee: IHI Ionbond AG
    Inventors: Michael Auger, Renato Bonetti, Hristo Strakov
  • Patent number: 9230846
    Abstract: Wafer carriers and methods for moving wafers in a reactor. The wafer carrier may include a platen with a plurality of compartments and a plurality of wafer platforms. The platen is configured to rotate about a first axis. Each of the wafer platforms is associated with one of the compartments and is configured to rotate about a respective second axis relative to the respective compartment. The platen and the wafer platforms rotate with different angular velocities to create planetary motion therebetween. The method may include rotating a platen about a first axis of rotation. The method further includes rotating each of a plurality of wafer platforms carried on the platen and carrying the wafers about a respective second axis of rotation and with a different angular velocity than the platen to create planetary motion therebetween.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: January 5, 2016
    Assignee: Veeco Instruments, Inc.
    Inventors: Adrian Celaru, Todd A. Luse, Ajit P. Paranjpe, Joseph Scandariato, Qingfu Tang
  • Patent number: 9186742
    Abstract: A brazing process and assembly utilizing microwave radiation and a plasma generator that is heated by microwave radiation and generates a localized plasma capable of selectively heating and melting a braze alloy. The plasma generator contains a microwave-susceptible material that is susceptible to heating by microwave radiation, and a plasma-generating material capable of volatilizing and generating the plasma when the plasma generator is subjected to heating and microwave radiation. The brazing process includes applying a braze material to a surface of a substrate, positioning the plasma generator in proximity to the braze material, and then subjecting the plasma generator to microwave radiation to volatilize the plasma-generating material and generate a plasma that melts the braze alloy within the braze material.
    Type: Grant
    Filed: January 30, 2009
    Date of Patent: November 17, 2015
    Assignee: General Electric Company
    Inventors: Laurent Cretegny, Jeffrey Jon Schoonover
  • Patent number: 9163308
    Abstract: Light reactive deposition uses an intense light beam to form particles that are directly coated onto a substrate surface. In some embodiments, a coating apparatus comprising a noncircular reactant inlet, optical elements forming a light path, a first substrate, and a motor connected to the apparatus. The reactant inlet defines a reactant stream path. The light path intersects the reactant stream path at a reaction zone with a product stream path continuing from the reaction zone. The substrate intersects the product stream path. Also, operation of the motor moves the first substrate relative to the product stream. Various broad methods are described for using light driven chemical reactions to produce efficiently highly uniform coatings.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: October 20, 2015
    Assignee: NanoGram Corporation
    Inventors: Xiangxin Bi, Ronald J. Mosso, Shivkumar Chiruvolu, Sujeet Kumar, James T. Gardner, Seung M. Lim, William E. McGovern
  • Patent number: 9123765
    Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: September 1, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mehmet Tugrul Samir, Shu-Kwan Lau
  • Publication number: 20150147889
    Abstract: A substrate processing chamber and methods for processing multiple substrates is provided and generally includes a gas distribution assembly, a susceptor assembly to rotate substrates along a path adjacent each of the gas distribution assembly and a gas diverter to change the angle of gas flow in the processing chamber.
    Type: Application
    Filed: November 18, 2014
    Publication date: May 28, 2015
    Inventors: Joseph Yudovsky, Kevin Griffin
  • Patent number: 9040434
    Abstract: A film deposition method includes a step of condensing hydrogen peroxide on a substrate including a concave portion formed in a surface thereof by supplying a gas containing the hydrogen peroxide, and a step of supplying a silicon-containing gas reactable with the hydrogen peroxide to the substrate having the hydrogen peroxide condensed thereon.
    Type: Grant
    Filed: July 10, 2013
    Date of Patent: May 26, 2015
    Assignee: Tokyo Electron Limited
    Inventor: Hitoshi Kato
  • Publication number: 20150136028
    Abstract: The present invention relates to a substrate processing apparatus: including a chamber comprising a body having an inner space and a top lid provided on an upper part of the body, the top lid having at least one gas input port; a substrate supporting unit rotatably installed inside the chamber to support a plurality of substrates; and a gas injection device comprising a central injection unit provided on an upper part of the substrate supporting unit to inject a gas into a central region of the substrate supporting unit, a source gas injection unit provided around the central injection unit to inject a source gas into the substrate supporting unit, a reaction gas injection unit provided around the central injection unit to inject a reaction gas into the substrate supporting unit and a purge gas injection unit disposed between the source gas injection unit and the reaction gas injection unit; wherein at least one of the source gas injection unit and the reaction gas injection unit comprises a main injection un
    Type: Application
    Filed: November 21, 2013
    Publication date: May 21, 2015
    Applicant: WONIK IPS CO., LTD.
    Inventors: Young Hoon PARK, Dong Ho RYU, Won Jun YOON
  • Publication number: 20150136029
    Abstract: A rotary table unit in a film deposition system according to the present invention includes a rotary table and first interchangeable units and second interchangeable units detachably attachable to the rotary table. A workpiece to be mounted on each second interchangeable unit differs in diameter from a workpiece to be mounted on each first interchangeable unit. To keep constant a distance between each of the workpieces of different sizes and a target, a distance between a position, where the workpiece mounted on each first workpiece mount plate faces an evaporation surface of the target, and a rotation center of the rotary table is set equal to a distance between a position, where the workpiece mounted on each second workpiece mount plate faces the evaporation surface of the target, and the rotation center.
    Type: Application
    Filed: October 23, 2014
    Publication date: May 21, 2015
    Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
    Inventor: Hirofumi FUJII
  • Patent number: 9029737
    Abstract: An apparatus for forming a solar cell includes a housing defining a vacuum chamber, a rotatable substrate support, at least one inner heater and at least one outer heater. The substrate support is inside the vacuum chamber configured to hold a substrate. The at least one inner heater is between a center of the vacuum chamber and the substrate support, and is configured to heat a back surface of a substrate on the substrate support. The at least one outer heater is between an outer surface of the vacuum chamber and the substrate support, and is configured to heat a front surface of a substrate on the substrate support.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: May 12, 2015
    Assignee: TSMC Solar Ltd.
    Inventors: Edward Teng, Ying-Chen Chao, Chih-Jen Yang
  • Patent number: 9028614
    Abstract: When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: May 12, 2015
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Daisuke Hara, Takeshi Itoh, Masanao Fukuda, Takatomo Yamaguchi, Hiroaki Hiramatsu, Shuhei Saido, Takafumi Sasaki
  • Patent number: 9023429
    Abstract: A method of manufacturing a semiconductor device including: mounting a substrate on a substrate mounting member that is disposed in a reaction container; heating the substrate at a predetermined processing temperature and supplying a first gas and a second gas to the substrate to process the substrate; stopping supply of the first gas and the second gas, and supplying an inert gas into the reaction container; and unloading the substrate to outside the reaction container.
    Type: Grant
    Filed: September 25, 2012
    Date of Patent: May 5, 2015
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yuichiro Takeshima, Osamu Kasahara, Kazuyuki Toyoda, Junichi Tanabe, Katsuhiko Yamamoto, Hisashi Nomura
  • Publication number: 20150096496
    Abstract: A film-deposition apparatus simultaneously realizes high partial pressure of volatile components, great flow velocity and smooth deposition rate curve at lower gas consumption. The apparatus comprises a disk-like susceptor, a face member opposing the susceptor, an injector, a material gas introduction portion, and a gas exhaust portion. A wafer holder retains a substrate, and a supporting member of the susceptor retains the wafer holder. The susceptor revolves around its central axis and the substrate rotates by itself. The opposing face member is structured so that a fan-shaped recessed portion and a fan-shaped raised portion are formed alternately in a radial manner, by which the height of the flow channel changes in a circumferential direction. The apparatus provides film deposition equivalent to that attained under optimal conditions by a conventional apparatus at a smaller flow rate of the carrier gas, and increases a partial pressure of material gases of volatile components.
    Type: Application
    Filed: September 30, 2014
    Publication date: April 9, 2015
    Applicant: HERMES-EPITEK CORPORATION
    Inventors: Noboru SUDA, Takahiro OISHI, Junji KOMENO, Po-Ching LU, Shih-Yung SHIEH, Bu-Chin CHUNG
  • Publication number: 20150078864
    Abstract: A substrate processing apparatus is provided to deposit a film including a reaction product on a substrate by repeating a supply cycle of sequentially supplying at least two kinds of reaction gases reactable with each other to a surface of the substrate in a chamber. The substrate processing apparatus includes a turntable provided in the chamber and having a concave portion for receiving the substrate formed in its surface and through-holes formed in the concave portion, a lifting mechanism including lift pins used when transferring the substrate placed on the concave portion, and a control unit configured to control the lifting mechanism. The control unit controls the lifting mechanism to carry the substrate out of the concave portion by moving the lifting pins upward in a vertical direction and inward in a radial direction of the turntable after the lifting pins contact the substrate through the through-holes.
    Type: Application
    Filed: September 10, 2014
    Publication date: March 19, 2015
    Inventors: Kaoru SATO, Kiichi TAKAHASHI
  • Publication number: 20150075431
    Abstract: A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.
    Type: Application
    Filed: May 9, 2013
    Publication date: March 19, 2015
    Applicant: VEECO INSTRUMENTS INC.
    Inventors: Louise S. Barriss, Richard A. Comunale, Roger P. Fremgen, Alexander I. Gurary, Todd A. Luse, Robert White Milgate, III, John D. Pollock
  • Publication number: 20150079764
    Abstract: According to one embodiment, a vapor phase growth apparatus includes a susceptor in a chamber, the susceptor configured to rotate on an axis perpendicular to a surface of the susceptor, a plurality of substrate holding portions above the susceptor, each of the substrate holding portions configured to revolve around the axis by the rotation of the susceptor and configured to rotate circumferentially, a plurality of bearings arranged in a housing between the susceptor and the substrate holding portion, and a plurality of blade portions on an outer periphery of the substrate holding portion, each of the blade portions extending radially toward a center of the substrate holding portion.
    Type: Application
    Filed: March 10, 2014
    Publication date: March 19, 2015
    Applicant: Kabushiki Kaisha Toshiba
    Inventor: Katsuhiko Nishitani
  • Patent number: 8980001
    Abstract: A susceptor having a recessed portion and a ring-like step portion is arranged in a reaction chamber, and a plurality of through bores are formed in a bottom wall in the recessed portion excluding the step portion. A lift pin inserted in each of the through bores temporarily holds a wafer, then a lower surface of an outer peripheral portion of the wafer is mounted on the step portion to accommodate the wafer in the recessed portion, and a raw material gas is circulated in the reaction chamber to form an epitaxial layer on a wafer surface in the recessed portion. When forming the epitaxial layer on the wafer surface, the lift pin protrudes upwards from an upper surface of the bottom wall, and a height h of a top portion of the lift pin based on the upper surface of the bottom wall as a reference is set to the range from a position where the height h exceeds 0 mm to a position immediately before the lift pin comes into contact with the wafer.
    Type: Grant
    Filed: July 24, 2009
    Date of Patent: March 17, 2015
    Assignee: Sumco Corporation
    Inventors: Masaya Sakurai, Masayuki Ishibashi
  • Patent number: 8974631
    Abstract: A device for fluid treatment of a plate-like article includes a rotary head for holding and rotating a plate-like article around a substantially vertical rotation axis drive elements to suspend and drive the rotary head without contact, the elements to suspend and drive the rotary head being arranged radially around the rotary head a substantially cylindrical sidewall, which is substantially concentric to the rotation axis, wherein the cylindrical sidewall is arranged between the rotary head and the drive elements and is introduced in the gap between the rotary head and the drive elements elevating members for lifting and lowering the rotary head and the wall relative to each other.
    Type: Grant
    Filed: February 7, 2007
    Date of Patent: March 10, 2015
    Assignee: Lam Research AG
    Inventor: Rainer Obweger
  • Patent number: 8974632
    Abstract: A method and device for processing wafer-shaped articles comprises a closed process chamber. A rotary chuck is located within the process chamber, and is adapted to hold a wafer shaped article thereon. An interior fluid distribution ring is positioned above the rotary chuck, and comprises an annular surface inclined downwardly from a radially inner edge to a radially outer edge thereof. At least one fluid distribution nozzle extends into the closed process chamber and is positioned so as to discharge fluid onto the annular surface of the fluid distribution ring.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: March 10, 2015
    Assignee: Lam Research AG
    Inventors: Ulrich Tschinderle, Andreas Gleissner, Michael Brugger
  • Patent number: 8961691
    Abstract: A disclosed film deposition apparatus includes a susceptor having in one surface a substrate receiving portion provided rotatably in a chamber; a heating unit including plural independently controllable heating portions, thereby heating the susceptor; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.
    Type: Grant
    Filed: August 31, 2009
    Date of Patent: February 24, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Kazuteru Obara, Manabu Honma
  • Patent number: 8961690
    Abstract: A process of coating at least one substrate with a plurality of deposition sources, a method of tooling, a carrier unit and a deposition system are described. The systems and methods provide for or allow for exposing a first substrate portion 112a of said at least one substrate 112 to a first deposition source 118a through an aperture 122 of a carrier unit 110, 510, depositing a first layer 126a over the first substrate portion, said first layer including material from said first deposition source, varying a relative position between said at least one substrate and said aperture for exposing a second substrate portion of said at least one substrate, or another substrate, to a second deposition source, and depositing a second layer 126b over the second substrate portion 112b, said second layer including material from said second deposition source.
    Type: Grant
    Filed: May 10, 2011
    Date of Patent: February 24, 2015
    Assignee: Applied Materials GmbH & Co. KG
    Inventors: Uwe Hoffmann, Jose Manuel Dieguez-Campo
  • Patent number: 8961688
    Abstract: Disclosed are a method and a device for plasma treating workpieces (5). Said workpiece is inserted into a chamber (7) of a treatment station (3), which can be at least partly evacuated, and is positioned within the treatment station by means of a holding element. In order to simultaneously supply at least two chambers with at least one operating means, a flow of the operating means is branched at least once so as to form at least two partial flows (55).
    Type: Grant
    Filed: May 9, 2003
    Date of Patent: February 24, 2015
    Assignee: KHS Corpoplast GmbH
    Inventors: Michael Lizenberg, Frank Lewin, Hartwig Müller, Klaus Vogel, Gregor Arnold, Stephan Behle, Andreas Lüttringhaus-Henkel, Matthias Bicker, Jürgen Klein, Marten Walther
  • Publication number: 20150047566
    Abstract: Embodiments of the disclosure relate to an apparatus for processing a semiconductor substrate. The apparatus includes a process chamber having a substrate support for supporting a substrate, a lower dome and an upper dome opposing the lower dome, a plurality of gas injects disposed within a sidewall of the process chamber. The apparatus includes a gas delivery system coupled to the process chamber via the plurality of gas injects, the gas delivery system includes a gas conduit providing one or more chemical species to the plurality of gas injects via a first fluid line, a dopant source providing one or more dopants to the plurality of gas injects via a second fluid line, and a fast switching valve disposed between the second fluid line and the process chamber, wherein the fast switching valve switches flowing of the one or more dopants between the process chamber and an exhaust.
    Type: Application
    Filed: July 28, 2014
    Publication date: February 19, 2015
    Inventors: Errol Antonio C. SANCHEZ, Swaminathan T. SRINIVASAN
  • Patent number: 8951353
    Abstract: A manufacturing method for semiconductor device includes: loading a wafer to a reaction chamber and placing the wafer on a support member; supplying process gas including source gas to a surface of the wafer, controlling a heater output and heating the wafer to a predetermined temperature while rotating the wafer at a first rotational speed, and thereby forming a film on a surface of the wafer; stopping supplying the source gas; decreasing a rotational speed of the wafer to a second rotational speed which enables an offset balance of the wafer to be maintained and stopping the heater output; and decreasing a temperature of the wafer while rotating the wafer at the second rotational speed.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: February 10, 2015
    Assignee: NuFlare Technology, Inc.
    Inventors: Yoshikazu Moriyama, Yoshihisa Ohta