Rotary Patents (Class 118/730)
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Publication number: 20140242810Abstract: A substrate processing apparatus includes: a process chamber for processing a substrate; a substrate mounting member including a mounting surface on which a plurality of substrates are concentrically mounted with facing a ceiling of the process chamber; a rotation instrument for rotating the substrate mounting member in a direction parallel to the mounting surface; a gas supply unit and a gas exhaust unit which are disposed in the process chamber above the substrate mounting member upstream and downstream in the substrate mounting member rotating direction, respectively; and a controller for controlling the gas supply unit, the gas exhaust unit, and the rotation instrument to process the substrates, when the substrate passes through a predetermined region formed in the process chamber by the gas supply unit and the gas exhaust unit, by supplying a reactant gas from the gas supply unit and exhausting the reactant gas from the gas exhaust unit.Type: ApplicationFiled: February 26, 2014Publication date: August 28, 2014Applicant: HITACHI KOKUSAI ELECTRIC, INC.Inventor: Sataoshi TAKANO
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Patent number: 8815048Abstract: A substrate processing apparatus has a cup part for receiving processing liquid which is applied from a processing liquid applying part and is splashed from a substrate, and the cup part is formed of electrical insulation material. Hydrophilic treatment is performed on an outer annular surface of the cup part and water is held on the outer annular surface of the cup part while processing the substrate. With this structure, charged potential of the cup part generated in splashing of pure water can be suppressed by the water held on the outer annular surface, without greatly increasing the manufacturing cost of the substrate processing apparatus by forming the cup part with special conductive material. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.Type: GrantFiled: September 11, 2007Date of Patent: August 26, 2014Assignee: Dainippon Screen Mfg. Co., Ltd.Inventors: Masahiro Miyagi, Masanobu Sato, Hiroyuki Araki
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Patent number: 8813677Abstract: A composite particulate preparing apparatus is provided that includes a rotating body receiving particulates to which an adhering material is allowed to adhere and having a bottom surface, a side wall and a flange part; a centrifugal machine rotating the rotating machine to apply centrifugal force to the particulates in the rotating body; an inclination varying device shifting the rotating body at an arbitrary inclination angle so that the bottom surface of the rotating body forms a vertical plane parallel to a gravitational direction from a horizontal plane perpendicular to the gravitational direction; and a stirring device disposed closer to a horizontal line perpendicular to a vertical line drawn from a rotational center of the rotating body in a gravitational direction on a rotational side where the particulates drop from an uppermost point, than to the vertical line.Type: GrantFiled: September 2, 2010Date of Patent: August 26, 2014Assignee: Sony CorporationInventors: Go Sudo, Kenji Katori, Hayato Hommura
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Publication number: 20140224178Abstract: In a rotating disk reactor (1) for growing epitaxial layers on substrate (3), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis (10a) may include a higher concentration of a reactant gas (4) than the gas directed toward portions of the disk close to the axis (10d), so that portions of the substrate surfaces at different distances from the axis (14) receive substantially the same amount of reactant gas (4) per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.Type: ApplicationFiled: April 17, 2014Publication date: August 14, 2014Applicant: Veeco Instruments Inc.Inventors: Michael Murphy, Richard Hoffman, Jonathan Cruel, Lev Kadinski, Jeffrey C. Ramer, Eric A. Armour
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Publication number: 20140224176Abstract: A metal-organic chemical vapor deposition (MOCVD) apparatus includes: a reaction chamber including a chamber main body forming an interior space having a certain volume and a chamber cover hermetically sealing the chamber main body to maintain air-tightness; a susceptor rotatably provided within the chamber main body and having one or more accommodation portions formed in an upper surface thereto to accommodate wafers; a cover member detachably provided on an interior surface of the chamber cover, forming a reaction space between the cover member and the susceptor, and formed by coupling a plurality of section members; and a gas supply unit supplying a reactive gas to the reaction space to allow the reactive gas to flow between the susceptor and the cover member.Type: ApplicationFiled: August 9, 2011Publication date: August 14, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Do Young Rhee, Young Sun Kim, Sung Tae Kim, Sang Heon Han, Ki Sung Kim
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Publication number: 20140224177Abstract: Provided is a substrate processing apparatus which include a process chamber in which a plurality of substrates are accommodated to be processed, a support member mounted at the process chamber and having the same plane on which a plurality of substrate are placed, an injection member mounted opposite to the support member and including a plurality of independent baffles to independently inject the least one reactive gas and the purge gas at positions respectively corresponding to the plurality of substrates placed on the support member, and a driving unit adapted to rotate the support member or the injection member such that the baffles of the injection member sequentially revolve around the plurality of respective substrates. The injection member includes a plasma generator mounted at least one of the baffles to plasmatize a reactive gas injected to a substrate.Type: ApplicationFiled: May 30, 2012Publication date: August 14, 2014Applicant: KOOKJE ELECTRIC KOREA CO., LTD.Inventors: Yong Sung Park, Sung Kwang Lee, Dong Yeul Kim, Hong Joo Bang, Min Seok Kim
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Publication number: 20140216347Abstract: A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaft. The reactor provides a novel geometry to specific components that function to reduce the gas usage while also improving the performance of the deposition.Type: ApplicationFiled: February 21, 2014Publication date: August 7, 2014Applicant: Valence Process Equipment, Inc.Inventors: Michael J. Begarney, Frank J. Campanale
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Patent number: 8795435Abstract: In accordance with the embodiment of the present invention, there is provided a susceptor which includes an annular first susceptor portion for supporting the peripheral portion of a silicon wafer and further includes a second susceptor portion provided in contact with the peripheral portion of the first susceptor portion and covering the opening of the first susceptor portion. The second susceptor portion is disposed so that, when the silicon wafer is supported on the first susceptor portion, a gap of a predetermined size is formed between the silicon wafer and the second susceptor portion, and so that another gap of a size substantially equal to the predetermined size and directly connected to the above gap is formed between the first susceptor portion and the second susceptor portion.Type: GrantFiled: July 1, 2010Date of Patent: August 5, 2014Assignees: Kabushiki Kaisha Toshiba, NuFlare Technology, Inc.Inventors: Shinya Higashi, Hironobu Hirata
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Publication number: 20140209028Abstract: A film deposition apparatus includes a turntable; a first process gas supply portion; a gas nozzle that supplies a second process gas; a nozzle cover that is provided to cover the gas nozzle; a separation gas supply portion, wherein the nozzle cover includes an upper plate portion, and an upstream sidewall portion and a downstream sidewall portion that extend downward from upstream and downstream edge portions of the upper plate portion in a rotational direction of the turntable, respectively, wherein an inner surface of the upstream sidewall portion is formed as an inclined surface that is inclined with respect to a surface of the turntable, and wherein an angle ?1 between the inner surface of the upstream sidewall portion and the surface of the turntable is smaller than an angle ?2 between an inner surface of the downstream sidewall portion and the surface of the turntable.Type: ApplicationFiled: January 24, 2014Publication date: July 31, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Kentaro OSHIMO, Masato KOAKUTSU, Hiroko SASAKI, Kaoru SATO, Hiroaki IKEGAWA
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Patent number: 8778083Abstract: A deposition apparatus according to an exemplary embodiment of the present invention is a lateral-flow deposition apparatus in which in which a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate. The lateral-flow deposition apparatus includes: a substrate support that moves up/down and rotates the substrate while supporting the substrate; a reactor cover that defines a reaction chamber by contacting the substrate support; and a substrate support lifter and a substrate support rotator that move the substrate support.Type: GrantFiled: July 21, 2010Date of Patent: July 15, 2014Assignee: ASM Genitech Korea Ltd.Inventors: Ki Jong Kim, Yong Min Yoo, Jung Soo Kim, Hyung Sang Park, Seung Woo Choi, Jeong Ho Lee, Dong Rak Jung
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Patent number: 8771483Abstract: A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.Type: GrantFiled: February 7, 2008Date of Patent: July 8, 2014Assignee: Intermolecular, Inc.Inventors: Rick Endo, Kurt Weiner, Indranil De, James Tsung, Maosheng Zhao, Jeremy Cheng
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Patent number: 8771416Abstract: A substrate processing apparatus comprises: a reaction chamber to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, the insulator having a cylindrical shape with a closed end facing the closed end of the heating target object; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system to supply at least a source gas into the reaction chamber; and a controller to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate.Type: GrantFiled: June 24, 2010Date of Patent: July 8, 2014Assignee: Hitachi Kokusai Electric Inc.Inventors: Shuhei Saido, Takatomo Yamaguchi, Kenji Shirako
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Publication number: 20140186546Abstract: A reactor includes a reactor chamber and a carbon nanotube catalyst composite layer. The reactor chamber has an inlet and an outlet. The carbon nanotube catalyst composite layer rotates in the reactor chamber, wherein the carbon nanotube catalyst composite layer defines a number of apertures, gases in the reactor chamber flow penetrate the carbon nanotube catalyst composite layer through the plurality of apertures.Type: ApplicationFiled: April 24, 2013Publication date: July 3, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: YANG WU, PENG LIU, YANG WEI, JIA-PING WANG, KAI-LI JIANG, SHOU-SHAN FAN
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Publication number: 20140174350Abstract: There is provided a vapor phase deposition apparatus including: a reaction chamber having a susceptor with a wafer mounted thereon and depositing and growing an epitaxial thin film on the wafer; a housing having the reaction chamber disposed therein and having a window opened and closed to allow the wafer to be loaded into or unloaded from the wafer reaction chamber; and an exhaust unit discharging gas from within the housing to the outside to adjust internal pressure of the housing.Type: ApplicationFiled: August 9, 2011Publication date: June 26, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Kyu Bang, Chin Wook Chon, Kyung Don Han, Jong Wook Suk, Sung Il Han
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Patent number: 8758581Abstract: A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.Type: GrantFiled: September 5, 2008Date of Patent: June 24, 2014Assignee: Intermolecular, Inc.Inventors: Rick Endo, Kurt Weiner, Indranil De, James Tsung, Maosheng Zhao, Jeremy Cheng
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Patent number: 8747627Abstract: The invention relates to a method and to a device for reversing the feeding of a sputter coating system, particularly when coating a photovoltaic module, in clean rooms, having the following characteristics: a) a transport frame (11) for receiving a substrate wafer (19) of a photovoltaic module, b) a rotary device having means for mounting the transport frame (11), having means for rotating the transport frame (11), and having means for transporting the transport frame (11), c) means for precisely aligning the rotary device relative to the sputter coating system, d) a detection device (18) for checking a sputter process, and computer program having a program code for performing the process steps.Type: GrantFiled: November 26, 2009Date of Patent: June 10, 2014Assignee: Grenzebach Maschinenbau GmbHInventor: Roland Franz
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Patent number: 8746172Abstract: The present invention refers to an apparatus for the plasma treatment of hollow bodies, comprising a vacuum treatment chamber and means for generating the plasma, which apparatus is characterized in that the means for generating the plasma comprise an electrode of a substantially U-shaped cross-section, which is arranged in the vacuum treatment chamber, the hollow bodies immersing at least in part into the U-shaped electrode when the plasma treatment is carried out, and being moved at least temporarily relative to the U-shaped electrode.Type: GrantFiled: July 31, 2009Date of Patent: June 10, 2014Assignee: Krones AGInventors: Jochen Krueger, John Felts
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Patent number: 8721790Abstract: A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.Type: GrantFiled: December 9, 2010Date of Patent: May 13, 2014Assignee: Tokyo Electron LimitedInventors: Hitoshi Kato, Manabu Honma, Kohichi Orito, Yasushi Takeuchi, Hiroyuki Kikuchi
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Patent number: 8715418Abstract: A semiconductor processing system and related methodology is disclosed and which includes a processing chamber having an internal cavity and a transfer port; a transfer chamber which is positioned adjacent to the processing chamber; and a transfer apparatus having at least two extendible arms which are positioned within the transfer chamber, and wherein each of the extendible arms carry a semiconductor work piece into and out of the processing chamber by way of the transfer port, and wherein the at least two extendible arms are selectively vertically moveable, and further are each selectively moveable in the direction of the transfer port.Type: GrantFiled: May 24, 2006Date of Patent: May 6, 2014Assignee: Advanced Micro-Fabrication Equipment, Inc. AsiaInventor: AiHua Chen
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Patent number: 8715417Abstract: The invention provides a multi-film forming apparatus including a substrate holder stock chamber for storing a plurality of substrate holders separately from a path in the multi-film forming apparatus, so that production can be performed without being affected by the process of removing a film accumulated on the surface of the substrate holder and the process of replacing the substrate holder, or by the process of removing a film accumulated on the surface of the substrate holder or the process of replacing the substrate holder, and hence high-throughput production is possible. A branch path is provided on the path of the multi-film forming apparatus, and a substrate holder stock chamber for storing a plurality of substrate holders which enables retrieval of the substrate holder from the path and feeding of the substrate holder to the path is provided.Type: GrantFiled: January 18, 2013Date of Patent: May 6, 2014Assignee: Canon Anelva CorporationInventors: Shinji Furukawa, Masahiro Shibamoto
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Publication number: 20140120257Abstract: Methods and apparatus for selective gas injection and extraction for use in a substrate processing chamber are provided herein. In some embodiments, a gas injection and extraction apparatus includes a plate having a plurality of apertures through a thickness of the plate, each aperture of the plurality of apertures having an aperture wall; a plurality of tubes, each tube partially disposed within one of the plurality of apertures, wherein a disposed portion of each of the tubes is spaced apart from at least a portion of the aperture wall of the aperture in which it is disposed, thereby forming an interstice between at least a portion of the aperture wall and the disposed portion of the tube; a gas supply fluidly coupled to each of the tubes; and a vacuum source fluidly coupled to each of the interstices.Type: ApplicationFiled: October 11, 2013Publication date: May 1, 2014Applicant: APPLIED MATERIALS, INC.Inventor: MARTIN J. RIPLEY
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Publication number: 20140120735Abstract: A semiconductor processing apparatus includes a process chamber, a pedestal and a showerhead. The pedestal is inside the process chamber and holds a semiconductor wafer. The showerhead supplies process gas to the process chamber.Type: ApplicationFiled: October 31, 2012Publication date: May 1, 2014Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Shing Ann LUO, Yung Tai HUNG, Chin-Ta SU
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Publication number: 20140116330Abstract: A flow inlet element for a chemical vapor deposition reactor is formed from a plurality of elongated tubular elements extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane extending through the axis.Type: ApplicationFiled: January 8, 2014Publication date: May 1, 2014Applicant: VEECO INSTRUMENTS INC.Inventors: Mikhail Belousov, Bojan Mitrovic, Keng Moy
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Publication number: 20140109833Abstract: A substrate processing apparatus is provided with a process module including a processing container, a rotary table installed within the processing container, the rotary table having a plurality of placing regions to receive substrates, and a process gas supply unit supplying a process gas to the placing regions, a load port in which a transfer container is placed, a dummy substrate receiving unit, a transfer chamber including a transfer mechanism delivering the product substrates or the dummy substrates between the transfer container or the dummy substrate receiving unit and the rotary table, a setting unit setting a placing region to which one of the product substrates is to be transferred, and a control unit outputting a control signal such that the dummy substrates are carried into the remaining placing regions.Type: ApplicationFiled: October 22, 2013Publication date: April 24, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Naohide ITO, Keiji OSADA, Daisuke MORISAWA
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Publication number: 20140113389Abstract: A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.Type: ApplicationFiled: October 22, 2013Publication date: April 24, 2014Applicant: Sensor Electronic Technology, Inc.Inventors: Igor Agafonov, Jinwei Yang, Michael Shur, Remigijus Gaska
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Patent number: 8673079Abstract: A film deposition apparatus includes: a turntable; a first reaction gas supply part and a second reaction gas supply part extending from a circumferential edge toward a rotation center of the turntable; and a first separation gas supply part provided between the first and second reaction gas supply parts. A first space contains the first reaction gas supply part and has a first height. A second space contains the second reaction gas supply part and has a second height. A third space contains a first separation gas supply part and has a height lower than the first and second heights. A motor provided under the rotation center of the turntable rotates the turntable. A rotation shaft of the turntable and a drive shaft of the motor are coupled without generation of slip.Type: GrantFiled: August 31, 2009Date of Patent: March 18, 2014Assignee: Tokyo Electron LimitedInventors: Hitoshi Kato, Manabu Honma, Tomoki Haneishi
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Patent number: 8647437Abstract: An apparatus for depositing annular or circular wedge coatings with arbitrary dependence of thickness versus position includes a coating tool in which at least one substrate is disposed in a line of sight arrangement vs. least one deposition source, each substrate having an axis of symmetry and associated with a single mask having an aperture and positioned between the substrate and the least one deposition source, the mask and the substrate arranged to perform a relative rotation around a common axis to follow a law of motion which results in the deposition of a coating with a desired law of variation of thickness vs. position on the circumference of the substrate. The relative rotation is imparted by a motor. In embodiments in which there are a plurality of substrates and associated single masks, the substrates are positioned on a planet carrier independently rotatable by another motor.Type: GrantFiled: May 31, 2010Date of Patent: February 11, 2014Assignee: CI Systems (Israel) Ltd.Inventors: Moshe Lavi, Dario Cabib
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Patent number: 8641826Abstract: An alignment tool is used to ensure proper alignment of a component on a rotating gear relative to a non-rotating platter. The alignment tool includes a first arm member coupled to a locating feature on the gear, and a second arm member that is coupled to the first arm member such that the second arm member is movable relative to the first arm member. When the first arm member is coupled to the locating feature, the second arm member locates off the platter to verify proper alignment. The second arm member is cannot be fitted to the platter when there is improper alignment.Type: GrantFiled: May 31, 2012Date of Patent: February 4, 2014Assignee: United Technologies CorporationInventor: James S. Rosenblatt
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Patent number: 8641825Abstract: A substrate temperature regulation fixed apparatus has a base substance on which a vacuumed object is placed, an adhesive layer and a base plate. The base substance is fixed on the base plate through the adhesive layer. The adhesive layer contains a substance having plasma resistance.Type: GrantFiled: June 11, 2009Date of Patent: February 4, 2014Assignee: Shinko Electric Industries Co., Ltd.Inventors: Hiroshi Yonekura, Miki Saito, Koki Tamagawa
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Publication number: 20140014039Abstract: The present invention provides a vapor-phase growth apparatus, including: a reaction furnace in which a susceptor is removably installed, and in which vapor-phase growth is conducted; a transport robot which transports the aforementioned susceptor; a glove box which accommodates the pertinent transport robot and the aforementioned reaction furnace; an exchange table which is set up inside the pertinent glove box, and on which a susceptor is temporarily mounted during susceptor replacement; and an exchange box which is provided in a side wall of the aforementioned glove box, and in which susceptor replacement is conducted; and wherein the aforementioned exchange table comprises a positioning device which rotates upon mounting of the aforementioned susceptor, and which determines a position of the aforementioned susceptor in a rotational direction by stopping at a prescribed rotational position.Type: ApplicationFiled: March 16, 2012Publication date: January 16, 2014Applicants: TN EMC LTD., Taiyo Nippon Sanso CorporationInventors: Kazuki Naito, Akira Yamaguchi, Kosuke Uchiyama, Jun Yamamoto
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Publication number: 20140017905Abstract: A film deposition apparatus that laminates layers of reaction product by repeating cycles of sequentially supplying process gases that mutually reacts in a vacuum atmosphere includes a turntable receiving a substrate, process gas supplying portions supplying mutually different process gases to separated areas arranged in peripheral directions, and a separation gas supplying portion separating the process gases, wherein at least one process gas supplying portion extends between peripheral and central portions of the turntable and includes a gas nozzle discharging one process gas toward the turntable and a current plate provided on an upstream side to allow the separation gas to flow onto its upper surface, wherein a gap between the current plate and the turntable is gradually decreased from a central side of the turntable to a peripheral side of the turntable, and the gap is smaller on the peripheral side by 1 mm or greater.Type: ApplicationFiled: July 8, 2013Publication date: January 16, 2014Inventors: Hitoshi Kato, Shigehiro Miura
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Publication number: 20140017909Abstract: A film deposition method includes a step of condensing hydrogen peroxide on a substrate including a concave portion formed in a surface thereof by supplying a gas containing the hydrogen peroxide, and a step of supplying a silicon-containing gas reactable with the hydrogen peroxide to the substrate having the hydrogen peroxide condensed thereon.Type: ApplicationFiled: July 10, 2013Publication date: January 16, 2014Inventor: Hitoshi KATO
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Patent number: 8628622Abstract: A gas driven apparatus and method that can be useful for growing crystalline materials are provided. The gas driven rotation apparatus can include one or more rotatable substrate support members, each of which can be configured to support at least one substrate having a growth surface oriented in a downwardly facing position. The gas driven rotation apparatus can further include one or more drive gas channels adapted to direct the flow of a drive gas to rotate the substrate support member. One or more substrates can be positioned in the apparatus so that the growth surface of each substrate is downwardly oriented. A drive gas can flow through the drive gas channel to rotate the substrate. During rotation, reactant gases can be introduced to contact the downwardly facing growth surface, and epitaxial layers of a crystalline material can thereby be grown in a downward direction.Type: GrantFiled: September 12, 2005Date of Patent: January 14, 2014Assignee: Cree, Inc.Inventor: Adam William Saxler
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Publication number: 20140007815Abstract: The present invention provides a susceptor which is rotatably provided in a chamber and has a plurality of substrate mounting parts, and a substrate on which a thin film is deposited is rotatably mounted on the substrate mounting part, and the susceptor has a disk-shape wherein there is an opening at an inner periphery of the susceptor, into which a rotating shaft to rotate the susceptor is inserted, and the susceptor has a plurality of notches extending in a radial direction at an outer periphery and/or a periphery of said opening.Type: ApplicationFiled: July 1, 2013Publication date: January 9, 2014Applicants: TN EMC LTD., TAIYO NIPPON SANSO CORPORATIONInventors: Akira YAMAGUCHI, Kosuke UCHIYAMA
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Patent number: 8623142Abstract: A coating apparatus includes a base, actuators, separating boards and a gas guide grill. The base includes a carrying surface for supporting a workpiece. The base defines recesses on the carrying surface. The actuators include shafts rotatably located in the recesses correspondingly, and motors for driving the shafts. The separating boards are located above the carrying surface and securely connected to the shafts. The separating boards define chambers therebetween. The separating boards are capable of being rotated toward the carrying surface by the shafts. The gas guide grill is located above the base. The gas guide grill defines gas guide holes corresponding to the chambers respectively.Type: GrantFiled: November 16, 2010Date of Patent: January 7, 2014Assignee: Hon Hai Precision Industry Co., Ltd.Inventor: Shao-Kai Pei
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Publication number: 20130344244Abstract: A method for cleaning a gas conveying device in a film growth reaction chamber is provided. The gas conveying device comprises a gas conveying surface for releasing reaction gas to the film growth reaction chamber. The film growth reaction chamber comprises a support device.Type: ApplicationFiled: March 23, 2012Publication date: December 26, 2013Applicant: Advanced Micro-Fabrication Equipment Inc.,ShanghaiInventors: Zhiyou Du, Junichi Arami, Yijun Sun
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Patent number: 8613984Abstract: A plasma vapor deposition system for making multi-junction silicon thin film solar cell modules and panels including a flexible substrate disposed about and removably supported by a dual-walled cylindrical substrate support for axially rotating the flexible substrate about its longitudinal axis, the dual-walled cylindrical substrate support comprising an inner wall spaced apart by an outer wall to define a coaxial cavity; a plasma vapor deposition torch located substantially adjacent to the flexible substrate for depositing at least one thin film material layer on an outer surface of the flexible substrate; and a traversing platform for supporting the rotatable substrate support relative to the plasma vapor deposition torch, the rotatable substrate support being traversed along its longitudinal axis by the traversing platform.Type: GrantFiled: March 23, 2012Date of Patent: December 24, 2013Inventor: Mohd Aslami
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Publication number: 20130323422Abstract: Provided are atomic layer deposition apparatus and methods including a processing chamber with a substrate support at least one elongate nozzle movable relative to the substrate support. The processing chamber has a first gas at a first pressure and a second gas is provided from the elongate nozzle at a second pressure greater than the first pressure.Type: ApplicationFiled: May 29, 2012Publication date: December 5, 2013Applicant: Applied Materials, Inc.Inventor: Igor Peidous
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Publication number: 20130319333Abstract: An injector and a material layer deposition chamber including the same. An injector includes: a plurality of independent sections; and a gas inlet and a gas outlet that are provided in each of the plurality of independent sections, wherein gas outlets provided in two adjacent sections are positioned and configured to inject gas in a limited and different direction relative to each other.Type: ApplicationFiled: June 4, 2013Publication date: December 5, 2013Inventors: Jin-sub Lee, Min-seok Kim, Jung-sub Kim, Cheol-soo Sone
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Patent number: 8597430Abstract: A system for vapor deposition of a thin film layer on a photovoltaic module substrate is provided. The system includes a vacuum chamber having a pre-heat section, a vapor deposition apparatus, and a cool-down section; and a conveyor system operably disposed within said vacuum chamber and configured for conveying the substrates in a serial arrangement from said pre-heat section and through said vapor deposition apparatus at a controlled constant linear speed. The vapor deposition apparatus is configured for depositing a thin film of a sublimed source material onto an upper surface of the substrates as the substrates are continuously conveyed by said conveyor system through said vapor deposition apparatus.Type: GrantFiled: July 27, 2012Date of Patent: December 3, 2013Assignee: PrimeStar Solar, Inc.Inventors: Mark Jeffrey Pavol, Russell Weldon Black, Brian Robert Murphy, Christopher Rathweg, Edwin Jackson Little, Max William Reed
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Patent number: 8597429Abstract: Provided is a semiconductor manufacturing apparatus including: a reaction chamber including a gas supply inlet and a gas exhaust outlet, and into which a wafer is to be introduced; a process gas supply mechanism that supplies process gas into the reaction chamber from the gas supply inlet of the reaction chamber; a wafer retaining member that is arranged in the reaction chamber and that retains the wafer; a heater that heats the wafer retained by the wafer retaining member to a predetermined temperature; a rotation drive control mechanism that rotates the wafer retaining member together with the wafer; a gas exhaustion mechanism that exhausts gas in the reaction chamber from the gas exhaust outlet of the reaction chamber; and a drain that is disposed at a bottom portion near a wall surface in the reaction chamber and that collects and discharges oily silane that drips from the wall surface.Type: GrantFiled: January 13, 2012Date of Patent: December 3, 2013Assignee: NuFlare Technology, Inc.Inventors: Kunihiko Suzuki, Hironobu Hirata
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Patent number: 8591993Abstract: An epitaxial wafer manufacturing apparatus including: a chamber; a gas introduction port provided in the chamber and configured to introduce a reaction gas into the chamber; a gas exhaust port provided in the chamber and configured to exhaust the reaction gas from inside the chamber; a rotating unit provided inside the chamber; a wafer holder provided in an upper portion of the rotating unit and configured to hold a wafer; and an annular flow-regulating wall being spaced from the rotating unit and the wafer holder, the annular flow-regulating surrounding the upper portion of the rotating unit and a upper portion of the wafer holder, and the annular flow-regulating expanding downward. The flow-regulating wall has an upper end being located above the wafer holder. The upper end has a smaller inner diameter than an outer periphery of the wafer holder. The flow-regulating wall has a lower end being located below an upper surface of the rotating unit.Type: GrantFiled: March 23, 2009Date of Patent: November 26, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Shinya Higashi, Masashi Aizawa
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Patent number: 8591657Abstract: Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts.Type: GrantFiled: August 27, 2009Date of Patent: November 26, 2013Assignee: Hitachi Kokusai Electric Inc.Inventors: Takayuki Nakada, Tomoyuki Matsuda, Shinya Morita
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Publication number: 20130305992Abstract: A holding apparatus for a semiconductor substrate and a conveying apparatus for a semiconductor substrate. A susceptor is fixed to a rotational driving shaft to be attachable and detachable in a vertical direction, the opening portions are formed to extend through the susceptor in a thickness direction of the susceptor, and a meshing portion which meshes with the substrate holders releasably in a vertical direction so that the substrate holder can rotate according to rotation of the susceptor is provided below the susceptor.Type: ApplicationFiled: February 4, 2011Publication date: November 21, 2013Applicants: MICRO SYSTEM CO., LTD., VARIOS CO., LTD.Inventor: Gyo Yamamoto
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Patent number: 8585820Abstract: Methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment and methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material.Type: GrantFiled: November 15, 2007Date of Patent: November 19, 2013Assignee: SoitecInventors: Chantal Arena, Christiaan Werkhoven
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Patent number: 8585823Abstract: The present invention relates to a chemical vapor deposition (CVD) apparatus which has rotation type heater. Particularly, the inventive CVD apparatus has advantageous effects in that it includes a motor for rotating the heater and a position sensor assembly for detecting the orientational position of the heater, so that the thickness of a thin film being deposited on a wafer can be made uniform through the rotation of the heater upon the deposition in spite of uneven introduction of a reaction gas into a reaction chamber, and the orientational positions of the wafer at the start and the end of the deposition process which are identical to each other can be secured to thereby orient the wafer in a predetermined direction on the heater.Type: GrantFiled: June 23, 2006Date of Patent: November 19, 2013Assignee: Eugene Technology Co., Ltd.Inventor: Pyung-yong Um
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Publication number: 20130298836Abstract: Provided is a vapor phase growth apparatus having a rotation/revolution mechanism by which a rolling member is prevented from riding onto an adjacent rolling member. In a vapor phase growth apparatus having a rotation/revolution structure in which a plurality of substrate retaining members 21 are rotatably provided in the circumferential direction of the susceptor via a rolling member(ball 22,23) on a susceptor 11, heated by a heating unit as well as is rotated by a driving unit, the substrate retaining member is rotated accompanied by the rotation of the susceptor and a substrate 12 retained by the substrate retaining member is rotated while being revolved with respect to the rotation axis of the susceptor. As for the rolling members, rolling members different diameters (a large diameter ball 22 and a small diameter ball 23) are alternately arranged.Type: ApplicationFiled: January 18, 2012Publication date: November 14, 2013Applicants: TN EMC LTD., TAIYO NIPPON SANSO CORPORATIONInventors: Kazutada Ikenaga, Kosuke Uchiyama
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Patent number: 8580037Abstract: A method of depositing materials on a non-planar surface is disclosed. The method is effectuated by rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a method effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.Type: GrantFiled: June 10, 2009Date of Patent: November 12, 2013Assignee: Solyndra LLCInventor: Ratson Morad
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Publication number: 20130291798Abstract: The present invention relates to a thin film deposition apparatus and a substrate treatment system including same. The thin film deposition apparatus includes a deposition chamber, a susceptor, a rotation mechanism, an elevation member, and an elevation driving unit. The deposition chamber has an inner space in which a deposition process is performed. The susceptor is disposed within the deposition chamber, and a plurality of substrates is seated on a top surface of the susceptor. The elevation member is disposed above the susceptor to support a portion of each side of the substrates seated on the susceptor. When the elevation member is operated, the substrates are separated from the susceptor or seated on the susceptor. The elevation driving unit elevates the elevation member.Type: ApplicationFiled: January 3, 2012Publication date: November 7, 2013Applicant: WONIK IP CO., LTD.Inventors: Ho-Young Lee, Sang-Joon Park, Jin-Pil Heo, Byung-Guk Son, Wook-Sang Jang, Kyung-Cheol Lee
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Publication number: 20130295283Abstract: A chemical vapor deposition system includes first inlets that are located in a gas injector. Second inlets are also located in the gas injector. A first piping branch provides a gas to the first inlets and/or the second inlets. The first piping branch provides the gas at a first flow rate to the first inlets and/or at a second flow rate to the second inlets. A second piping branch provides a gas to the first inlets and/or the second inlets. The second piping branch provides the gas at at least a third flow rate to the first inlets and/or the second inlets.Type: ApplicationFiled: May 7, 2012Publication date: November 7, 2013Applicant: PINECONE MATERIAL INC.Inventor: Heng Liu