Abstract: A method of operating a laundry treating appliance having a drum, and an air conduit fluidly coupled to the drum, with a heat source associated with the air conduit, includes moving air through an air conduit to the drum; heating the moving air by operating the heat source; and introducing atomized liquid into the air conduit upstream of the heat source.

Abstract: A method, system and composition decontaminate a vessel. In an embodiment, a solvent composition for decontamination includes an amine oxide, polydimethylsiloxane, and water.

Abstract: A method for removing a hollow support element (17) from within a moulded part (15) to form a cavity (25) within the moulded part, the hollow support element being disposed within the moulded part and composed of material having a softening temperature, the method comprising: heating a liquid (20) to a temperature at least equal to the softening temperature of the material; injecting the heated liquid into an opening (24) in the moulded part to deform the material; and removing deformed material and liquid from the cavity.

Abstract: A debinder provides for debinding printed green parts in an additive manufacturing system. The debinder can include a storage chamber, a process chamber, a distill chamber, a waste chamber, and a condenser. The storage chamber stores a liquid solvent for debinding the green part. The process chamber debinds the green part using a volume of the liquid solvent transferred from the storage chamber. The distill chamber collects a solution drained from the process chamber and produces a solvent vapor from the solution. The condenser condenses the solvent vapor to the liquid solvent and transfer the liquid solvent to the storage chamber. The waste chamber collects a waste component of the solution.

Abstract: A method of flushing a hydraulic system including a fluid circuit and an in-service fluid flowing therein includes fluidly coupling a kidney loop to the fluid circuit such that at least a portion of the in-service fluid may flow therethrough, the kidney loop including a depth media filter and a micro-glass filter arranged in a parallel flow pattern and introducing a solvent cleaner into the in-service fluid at a concentration level between approximately 2.5% and approximately 6%, the solvent cleaner including at least one hydrocarbon group V fluid. The method further includes maintaining a temperature of the in-service fluid between approximately 100 degrees Fahrenheit and approximately 155 degrees Fahrenheit and controlling the flow of the in-service fluid at a flow rate between approximately 3 gallons per minute and approximately 6.8 gallons per minute.

Abstract: Disclosed is a wafer processing apparatus and method. The wafer processing apparatus comprises a chamber, which is a sealed structure having an openable baffle, and is internally provided with an immersion tank having a waste liquid discharge port; a vacuum system for adjusting and maintaining a pressure inside the chamber; a gas supply system comprising an inert gas supply unit and an organic solvent vapor supply unit respectively supplying an inert gas and an organic solvent vapor to the chamber; a temperature control system for adjusting the temperature inside the chamber. According to the present invention, the problems present in existing wafer drying modes can be solved, and in particular, the present invention is well adaptable to a trend of integrated circuit devices developed from a two-dimensional planar structure to a three-dimensional structure in morphology and having more and more increased density.

Abstract: According to one embodiment, a method for cleaning a substrate includes first cleaning process and second cleaning process. The first cleaning process subjects a substrate to a first cleaning method. The second cleaning process subjects the substrate to a second cleaning method that is different from the first cleaning method and is subsequent to the first cleaning process. The first cleaning method includes at least one of acidic cleaning or alkaline cleaning. The second cleaning method includes freeze cleaning.

Abstract: Provided is a substrate processing apparatus including a processing container configured to receive a substrate on which a dry preventing liquid is filled and perform a supercritical processing on the substrate; a fluid supply line connected to the processing container and configured to supply a processing fluid to the processing container; a fluid discharge line connected to the processing container and configured to discharge the processing fluid in the processing container; and a first circulation line connected to an upstream side and a downstream side of the processing container, and provided independently from the fluid supply line and the fluid discharge line to circulate the processing fluid in the processing container. The first circulation line is provided with a first reservoir tank that receives the processing fluid from the processing container and has a capacity larger than that of the processing container.

Abstract: When a substrate on which a fine pattern is formed is dried with vapor, prevention of collapse of the pattern due to water originally contained in IPA to be stored has been a problem to be solved. A mixed liquid stored in a mixed liquid storage is vaporized to generate mixed vapor containing the IPA and water (water vapor). Then, a vapor dewatering unit connected to a vapor supply pipe through which the mixed vapor is fed removes water in the mixed vapor. This can reduce the concentration of water originally contained in the IPA to be stored before the IPA is supplied to the substrate, thereby suppressing collapse of the pattern.

Abstract: The invention relates to a novel organic solubilisation and/or extraction solvent comprising at least one compound selected from the group of saturated monocyclic terpenoids, to an extraction method using said solvent, and to extracts obtained by said method. More particularly, the invention relates to a novel use of para-menthane, a saturated terpenoid compound, as a solvent derived from natural substances, and also to a solvent comprising para-menthane.

Abstract: The solid-liquid separator that uses the substance A capable of dissolving water and oil, and performs dehydration and deoiling from an object to be treated by bringing a mixture of water and a solid, oil and a solid, or water, oil and a solid that is an object to be treated, and the substance A in a liquid state into contact with each other, and subsequently evaporating the substance A, includes a substance B that circulates while causing change of state in a closed system, a compressor that compresses the substance B, a first heat exchanger that exchanges condensation heat of the substance B and evaporation heat of the substance A, an expansion valve that decompresses the substance B which is condensed, and a second heat exchanger that exchanges evaporation heat of the substance B and condensation heat of the substance A.

Abstract: A semiconductor chip package and a semiconductor chip packaging method are provided. The package includes: a semiconductor chip having a functional region, a protective substrate located on one side of the semiconductor chip and covering the functional region, and a support unit located between the protective substrate and the semiconductor chip and enclosing the functional region. The support unit includes an outer support member and an inner support member located inside the outer support member. A receiving cavity is formed between the inner support member, the semiconductor chip and the protective substrate. A hollow cavity is formed between the inner support member, the outer support member, the semiconductor chip and the protective substrate. The inner support member is provided with at least one first ventilating structure, through which the receiving cavity is in communication with the hollow cavity.

Abstract: A medical waste treatment device for health-care facility includes a frame, a waste disposal device and a control system; wherein the waste disposal device comprises three or more waste disposal boxes which are arranged in a row; a feeding conveyor belt is disposed at one side of the waste disposal boxes and the feeding conveyor belt extends to positions above each of the waste disposal boxes; the feeding conveyor belt is driven by a motor; each of the waste disposal boxes is provided with a waste label identification component, a pushing component which is configured to push waste container into the waste disposal box, and a sealing component; a feeding access is opened on the top of each of the waste disposal boxes and a discharge access is opened on the bottom of each of the waste disposal boxes; a feeding access control system is provided at each of the feeding access and a discharge access control system is provided at each of the discharge access; a branch conveyor belt is disposed below the discharge a

Abstract: When a substrate on which a fine pattern is formed is dried with vapor, prevention of collapse of the pattern due to water originally contained in IPA to be stored has been a problem to be solved. A mixed liquid stored in a mixed liquid storage is vaporized to generate mixed vapor containing the IPA and water (water vapor). Then, a vapor dewatering unit connected to a vapor supply pipe through which the mixed vapor is fed removes water in the mixed vapor. This can reduce the concentration of water originally contained in the IPA to be stored before the IPA is supplied to the substrate, thereby suppressing collapse of the pattern.

Abstract: Device for mixing solid particles of dry ice and the flow of gaseous medium including a feeding element (2) rotatively placed within the fixed housing (1) having openings (12, 13) for the flow of gaseous medium and/or the flow of gaseous medium with solid particles. Between the fixed housing (1) and rotatively placed feeding element (2) the immovable elastic membrane (3) is placed. The fixed housing (1) is at the side of the elastic membrane (3) provided by at least one sealed pressure chamber (14) connected with the opening (13) for the flow of gaseous medium and/or the opening (12) for the flow of gaseous medium with solid particles.

Abstract: Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.

Abstract: A substrate processing method using a cleaning liquid containing a foaming agent that foams due to application of foaming energy, and including a foaming energy supplying step of applying the foaming energy to the cleaning liquid in contact with the substrate to clean the substrate.

Abstract: The present invention comprises a method and system for the in-situ cleaning of a heat exchanger tube bundle of carbonaceous deposits. Using the method and system, an organic solvent is brought into fluid communication with one or more heat exchanger tube bundles in a closed system. The closed system is formed at the site of operation of the heat exchanger tube bundles and without having to remove the heat exchanger tube bundles from their shells or other associated equipment. Once the closed system is formed, the organic solvent is brought to a temperature at which it is effective to remove carbonaceous deposits from the heat exchanger tube bundle and flowed through the equipment associated with the heat exchanger tube bundles so as to contact the heat exchanger tube bundles and remove carbonaceous deposits that have formed therein.

Abstract: A process and apparatus for quenching a metal workload from an elevated heat treating temperature are disclosed. The process includes the step of flowing a vegetable oil quenchant over the metal workload to provide a cooling rate sufficient to transform the metal substantially completely to a desired second phase comprising martensite, bainite, pearlite, or a combination thereof within a preselected time period. The apparatus includes a quenching chamber that has a base, an upper housing, a door, and an associated actuator for opening and closing the quenching chamber. The apparatus also includes a vessel for holding a volume of a vegetable oil quenchant, means for conducting the vegetable oil quenchant from the vessel to the quenching chamber, and means disposed in the quenching chamber for flowing the vegetable oil quenchant over a metal workload disposed in the quenching chamber.

Abstract: A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.

Abstract: A method for operating an electronic device manufacturing system is provided, including: introducing an inert gas into a process tool vacuum pump at a first flow rate while the process tool is operating in a process mode; and introducing the inert gas into the process tool vacuum pump at a second flow rate while the process tool is operating in a clean mode. Numerous other embodiments are provided.

Abstract: A method of selecting a mercury-contaminated solid surface followed by heating a cleaning solution to a temperature less than 100° C. The cleaning solution can contain hydrocarbon oil and one or more organic sulfur compounds. Afterwards, the heated cleaning solution is contacted with the mercury-contaminated solid surface to remove the mercury contamination.

Abstract: The present invention increases a number of target reaction containers from one into many. Coordinated with increased reaction times, total reaction volume is increased. By modifying an affinitive column of an automatic synthesis system, a production in a single batch is increased. The products obtained can be conformed to quality check specifications with cost saved.

Abstract: The aim of the invention is to provide a method for the treatment of a transport support (1) for the conveyance and storage of semiconductor substrates, with said support (1) possibly having first undergone a cleaning operation using a liquid. The method includes a treatment stage in which the transport support (1) is placed in a sealed chamber (4) connected to a vacuum pump (5) and said transport support (1) is subjected to the combined action of a subatmospheric pressure and infrared radiation to favor the removal of foreign bodies on the walls of the transport support (1). The invention also concerns a treatment station for a transport support (1) for implementation of the method.

Abstract: A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

Abstract: A cleaning liquid is pressurized and superheated to a condition, in which temperature of the cleaning liquid is above an atmospheric boiling point. A product to be cleaned is interposed between a pair of liquid holding blocks, so that gaps are respectively formed between side surfaces of the product and the liquid holding blocks. The pressurized and superheated liquid is injected to the product so that layers of condensate of vapor of injected cleaning liquid are formed in the gaps. Contamination on the surface of the product is removed by the cleaning liquid and the surface is dried by latent heat of the condensate of the vapor of the cleaning liquid.

Abstract: A method for reducing contamination in an etch chamber is provided. A substrate with a metal containing layer is placed in the etch chamber. The metal containing layer is etched, producing nonvolatile metal residue deposits on surfaces of the etch chamber, wherein some of the metal residue of the metal residue deposits is in a first state. The substrate is removed from the etch chamber. The chamber is conditioned by converting metal residue in the first state to metal residue in a second state, where metal residue in the second state has stronger adhesion to surfaces of the etch chamber than metal residue in the first state.

Abstract: Methods of preparing a clean surface of germanium tin or silicon germanium tin layers for subsequent deposition are provided. An overlayer of Ge, doped Ge, another GeSn or SiGeSn layer, a doped GeSn or SiGeSn layer, an insulator, or a metal can be deposited on a prepared GeSn or SiGeSn layer by positioning a substrate with an exposed germanium tin or silicon germanium tin layer in a processing chamber, heating the processing chamber and flowing a halide gas into the processing chamber to etch the surface of the substrate using either thermal or plasma assisted etching followed by depositing an overlayer on the substantially oxide free and contaminant free surface. Methods can also include the placement and etching of a sacrificial layer, a thermal clean using rapid thermal annealing, or a process in a plasma of nitrogen trifluoride and ammonia gas.

Abstract: A pickling process for descaling metal includes a two-stage filtering process to remove pickling liquor fog, mist, and/or vapors from a gas collected during the descaling process. The process includes a two-stage filtering arrangement that includes a first stage filter, which is arranged to remove a liquid phase of the pickling liquor from the gas, and a second stage filter, which is arranged to remove a gaseous phase of the pickling liquor the said gas. The recovered pickling liquor can advantageously be recycled for reuse because it is recovered in a relatively higher concentration that has heretofore been possible.

Abstract: A method for cleaning plated polished disks used in hard drive media is provided. The method includes positioning plated polished disks in a first batch scrubber having multiple first brushes, wherein each of the plated polished disks is positioned between two of the first brushes, and scrubbing the plated polished disks with the first brushes. The method further includes positioning the plated polished disks scrubbed in the first batch scrubber in a second batch scrubber having multiple second brushes, wherein each of the plated polished disks is positioned between two of the second brushes, and scrubbing the plated polished disks with the second brushes.

Abstract: A dishwasher with a closed loop condenser having a moist air conduit, a dry air conduit having a portion in overlying relationship with a portion of the moist air conduit, wherein the overlying portions of the moist air conduit and the dry air conduit form a heat exchanger, and a controllable gate for selectively introducing, exhausting, or redirecting air relative to the condenser.

Abstract: A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

Abstract: Method and apparatus for removing residues of hazardous materials from vapor in a tank (1), wherein such a vapor is heated, passed outside the tank and subsequently cooled and the remaining dry vapor is recirculated, characterized in that a) said vapor is heated to a temperature of at least 5° C. above the melting point and below the self ignition point of the hazardous material, b) the vapor mixture thus formed is passed by means of a pump (3) from the tank through a discharge unit to a recovery unit, c) is cooled to a temperature of at least 5° C. lower and above the melting point of the hazardous material in a recovery unit, d) the liquid components of the vapor are recovered and the dry gas mixture is recirculated to the tank after reheating to the desired temperature, e) said recirculation being repeated as required.

Abstract: The invention relates to a method of removing aromatic hydrocarbons from coke-oven gas. The coke-oven gas is contacted with a wash liquid in a gas scrubber, and aromatic hydrocarbons are separated by absorption from the coke-oven gas. Subsequently the wash liquid enriched with aromatic hydrocarbons is heated, and the aromatic hydrocarbons are stripped from the wash liquid using water vapor. After cooling the wash liquid is finally returned to the gas scrubber. According to the invention biodiesel is used as the wash liquid.

Abstract: By a method and a device for preventing corrosion on and in the region of a gas inlet nozzle during nitric acid condensation, contact of the condensing gas with the nozzle and with the surroundings of the nozzle are supposed to be minimized. This is achieved in that the gas inlet nozzle has a sleeve on the inside in the transition region to the interior of the condenser, by which sleeve a gas inlet orifice in the form of an annular gap is formed, whereby the annular space is provided with at least one feed opening for secondary air, so that an enveloping flow of secondary air is produced around the entering NO gas.

Abstract: A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.

Abstract: Provided is a cleaning process which is simplified and in which a time required for the cleaning process is reduced and which has an excellent cleaning effect. The cleaning process comprises loading a wafer in a high pressure cleaner, injecting high-purity gaseous carbon dioxide (CO2) having low pressure into the high pressure cleaner, injecting CO2 having lower pressure than supercritical cleaning pressure into the high pressure cleaner, cleaning the wafer by injecting a supercritical homogeneous transparent phase mixture in which a cleaning additive and supercritical CO2 are mixed, into the high pressure cleaner under a supercritical cleaning pressure, rinsing the wafer by injecting a supercritical rinsing mixture in which a rinsing additive and supercritical CO2 are mixed, into the high pressure cleaner, and separating CO2 from a mixture discharged from the high pressure cleaner.

Abstract: The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a portion of the interior surfaces. A contaminated purge gas is produced by transferring a portion of the contamination from the interior surfaces into the purge gas. The contaminated purge gas is removed from the device and the process is continued until the contaminant concentration in the contaminated purge gas is below a predetermined level.

Abstract: A system for supplying a reagent to multiple tools in an electronics fabrication facility is configured using a demand probability distribution. In specific examples the reagent is a non-atmospheric or a specialty gas and the demand probability distribution is developed using Monte Carlo statistical techniques. In one embodiment, a method for configuring a reagent supply system for an electronic device manufacturing facility is provided. The method includes (a) collecting representative information for process tools within the fabrication facility which use the reagent; (b) creating a simulation of process tool operation to model an overall demand profile for the process tools; (c) creating a statistical probability distribution of the reagent demand by the process tools using data from the model; and (d) correlating data from the probability distribution with supply system characterization data to configure the supply system.

Abstract: The invention relates to a method for cleaning plant components of a power station, wherein a medium is continuously passed through one or more plant components for cleaning a closed circuit and a check of the medium for degree of purity is carried out in at least one operating plant component.

Abstract: After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even.

Abstract: A method for removing contaminants from hard surfaces such as metal or plastic resin material using a propane and carbon dioxide system. The propane and carbon dioxide system removes the contaminants by a varying percentage of propane to carbon dioxide to maximize the cleaning properties while creating a gas combination without a flammability range in air.

Abstract: A rinsing container is provided for use in a process air circuit of a washer or washer/dryer and receives condensation water from a condensation water tank that collects condensation water acquired in the process air circuit from the drying of wet laundry. The rinsing container is provided above the condenser and dispenses a gush of water to a selected component via the sudden opening of the rinsing container on its outlet side.

Abstract: Provided are a cleaning device and a cleaning method of a semiconductor manufacturing apparatus, capable of performing a cleaning process more effectively as compared to conventional cases and obtaining a high cleaning effect. A semiconductor manufacturing apparatus cleaning device 100 includes a pure water steam generating vessel 2 for generating pure water steam from pure water; a supply port 5 for supplying the pure water steam to a cleaning target portion; a supply line 4 for connecting the pure water steam generating vessel with the supply port; a collection port 6 for collecting steam used in cleaning from the cleaning target portion; a collection vessel 8 for condensing and collecting the used steam; and a collection line 7 for connecting the collection port 6 with the collection vessel 8.

Abstract: A method for treating a substrate having a layer or coating of material thereon (such as for example a metal conductor coated with an insulating ‘enamel’) comprises the steps of directing a pulsed beam of laser radiation at the substrate to cause an interaction or adjacent the interface between the layer or coating and the substrate, leading to local separation of the layer or coating. The removal is effected by creating an interaction effect at the interface between the substrate and the layer or coating to create an effect similar to a shockwave which causes local separation of the layer or coating at the interface.

Abstract: An apparatus and method are provided for generating an electrochemically-activated vapor.

Abstract: A method of decontaminating an oxide layer-comprising surface of a component or a system of a nuclear facility. An acidic water film is produced on the surface, the film of water is brought into contact with a gaseous acid anhydride, and the oxide layer is treated with gaseous ozone as oxidizing agent.

Abstract: A cleaning agent or a rinsing agent having no flash point which comprises a chlorine-free fluorine-containing compound have a vapor pressure at 20° C. of 1.33×103 Pa or more and one or more components having a vapor pressure at 20° C. less than 1.33×103 Pa and optionally an additive such as an antioxidant; a method for cleaning which comprises cleaning with the cleaning agent and rinsing and/or vapor cleaning utilizing a vapor being generated by boiling the cleaning agent or a condensate thereof; a method for separating a soil which comprises contacting a cleaning agent in a cleaning tank with a condensate of the vapor of the cleaning agent in a soil separating tank, to thereby continuously separate and remove a soil contained in the cleaning agent; and a cleaning apparatus.

Abstract: The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.

Abstract: A drycleaning method is disclosed. The method uses a composition comprising 30 to 90 wt. % of a dipropylene glycol C3-C4 alkyl ether, 5 to 65 wt. % of one or more C10-C15 hydrocarbons, and 1 to 10 wt. % of water. The method combines acceptable stain removal with faster-than-expected evaporability, particularly at the elevated temperatures used in commercial drycleaning.