Abstract: After semiconductor wafers are loaded into a reaction vessel, and ruthenium (Ru) film or ruthenium oxide film is formed, the interior of the reaction vessel is efficiently cleaned without contaminating the wafers. The interior of the reaction vessel is heated to a temperature of above 850° C. while the pressure inside the reaction vessel is reduced to, e.g., 133 pa (1 Torr)-13.3 Kpa (100 Torr), and oxygen gas is fed into the reaction vessel at a flow rate of, e.g., above 1.5 Lm, whereby the ruthenium film or the ruthenium oxide film formed inside the reaction vessel is cleaned off. In place of oxygen gas, active oxygen, such as O3, O* and OH*, etc. may be used.

Abstract: The invention relates to a non-aqueous washing machine, methods of using the machine, methods of washing, and recycling.

Abstract: A portable extraction surface cleaner apparatus wherein a surface to be cleaned is heated to an elevated temperature and a cleaning fluid is applied to the surface to be cleaned sequentially or simultaneously. The cleaning fluid is removed from the surface by suction from a vacuum source. Power is applied alternatively or simultaneously to a heating element and to the vacuum source for recovering the deposited cleaning fluid.

Abstract: A method for disinfecting a volume or surfaces bounding a volume comprising nebulizing a solution comprising a sterilizing agent in a solvent having a lower boiling point than the sterilizing agent, for example ultrasonic nebulization of aqueous hydrogen peroxide, to form a nebulant. The nebulant is subjected to energy of a kind and for a duration sufficient to vaporize solvent in preference to sterilizing agent, eg heating element means, infra red, laser, microwave, RF or other radiation generating means; induction heating means; heat exchanger means; conduction means; convection means; or mechanical energy transfer means to increase the concentration of the agent in the nebulant particles. Vaporized solvent is removed from the gas stream at or above atmospheric pressure and, if necessary, the nebulant is cooled to below 7O0C. The volume or surfaces are exposed to the nebulant for a time sufficient to sterilize said volume or surfaces. Also, apparatus for carrying out the method.

Abstract: A cleaning device for the shaving head of a dry shaving apparatus includes a receptacle formed in a housing of the cleaning device. The receptacle adapted to receive the shaving head for cleaning with a cleaning fluid. During the cleaning cycle, the dry shaving apparatus is lockable in the cleaning device by means of an interlock. The shaving head is exposed to heat from a heater for drying subsequent to cleaning. Following a drying cycle, release of the interlock is controlled by a control element provided in the cleaning device to prevent an operator's skin from being burned by an excessively hot shaving head in an immediately succeeding shaving operation.

Abstract: The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a portion of the interior surfaces. A contaminated purge gas is produced by transferring a portion of the contamination from the interior surfaces into the purge gas. The contaminated purge gas is removed from the device and the process is continued until the contaminant concentration in the contaminated purge gas is below a predetermined level.

Abstract: A washcoat coating composition is disclosed that includes at least one water insoluble organic solvent and at least one polymer, such as an epoxy acrylic copolymer. A method of removing residual water from a mixture of residual water and washcoat using ultrafiltration is also disclosed. A method of coating a metal article and a washcoat system for applying a washcoat to a metal article is also disclosed.

Abstract: The present invention comprises a method and an apparatus for recirculating a process gas through a system. The process gas may be evacuated from the chamber, and a portion of the process gas may pass through at least a particle trap/filter while another portion of the process gas may be evacuated through mechanical backing pumps. The process gas that passes through the particle trap/filter may then join fresh, unrecirculated process gas and enter the processing chamber. The recirculated gas may join the fresh, unrecirculated processing gas after the fresh, unrecirculated processing gas has passed through a remote plasma source. The plasma generated in the remote plasma source may ensure that the recirculated process gas does not deposit on the conduits leading into the process chamber. The amount of gas recirculated may determine the amount of fresh, unrecirculated process gas that may be delivered to the process chamber.

Abstract: Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include (I) co-solvent(s), (II) surfactant(s), (III) chelating agent(s), and/or (IV) chemical reactant(s).

Abstract: Method for processing an article by contacting the article with a dense fluid. The article is introduced into a sealable processing chamber and the processing chamber is sealed. A dense fluid is prepared by introducing a subcritical fluid into a pressurization vessel and isolating the vessel, and then heating the subcritical fluid at essentially constant volume and essentially constant density to yield a dense fluid. At least a portion of the dense fluid is transferred from the pressurization vessel to the processing chamber, wherein the transfer of the dense fluid is driven by the difference between the pressure in the pressurization vessel and the pressure in the processing chamber, thereby pressurizing the processing chamber with transferred dense fluid. The article is contacted with the transferred dense fluid to yield a spent dense fluid and a treated article, and the spent dense fluid is separated from the treated article.

Abstract: Method for processing an article with a dense processing fluid in a processing chamber while applying ultrasonic energy during processing. The dense fluid may be generated in a separate pressurization vessel and transferred to the processing chamber, or alternatively may be generated directly in the processing chamber. A processing agent may be added to the pressurization vessel, to the processing chamber, or to the dense fluid during transfer from the pressurization vessel to the processing chamber. The ultrasonic energy may be generated continuously at a constant frequency or at variable frequencies. Alternatively, the ultrasonic energy may be generated intermittently.

Abstract: A method for cleaning materials containing solids and/or liquids is disclosed which involves contacting the materials with an extracting fluid including Xe, NH3, lower aromatics, nitrous oxide, water, CO, CO2, H2O, lower alcohols, lower alkanes, lower alkenes, or mixtures or combinations thereof under conditions of temperature and pressure sufficient to maintain the fluid at, near or above its critical point and to products derived therefrom.

Abstract: A method for cleaning materials containing solids and/or liquids is disclosed which involves contacting the materials with an extracting fluid including Xe, NH3, lower aromatics, nitrous oxide, water, CO, CO2, H2O, lower alcohols, lower alkanes, lower alkenes, or mixtures or combinations thereof under conditions of temperature and pressure sufficient to maintain the fluid at, near or above its critical point and to products derived therefrom.

Abstract: The present invention relates to a system for processing a lipophilic fluid, more particularly to a system for processing a lipophilic fluid utilized in a fabric treating process, even more particularly to a system for processing a lipophilic fluid such that contaminants such as water, surfactants, water, body/food oils, fatty acids, and dyes can be removed from the lipophilic fluid. In other words, the present invention relates to the “cleaning up” of or purification of a lipophilic fluid such that it can be re-used in a lipophilic fluid system.

Abstract: The method of continuously collecting jelly compounds from jelly filled cable is performed by recycling operation of a solvent by repeatedly heating, cleaning and condensing the recycling solvent used to deprive the jelly compounds of the jelly filled cable. The solvent can be retrieved for reuse unlimited times, and the collected jelly compounds can be purified for reuse too. The method is energy saving with less consumption of solvent. Absolutely no worry of an additional public nuisance.

Abstract: A method of utilizing a divided pressure vessel in a processing system employing a carbon dioxide based solvent includes transferring a first carbon dioxide based treating solution from a first liquid chamber in a divided pressure vessel having a plurality of liquid chambers to a processing vessel, returning the first treating solution from the processing vessel to the divided pressure vessel, transferring a second carbon dioxide based treating solution having a composition different from the first treating solution from a second liquid chamber in the divided pressure vessel to a processing vessel, and returning the second treating solution from the processing vessel to the divided pressure vessel. A divided pressure vessel may allow multiple solvent baths each having a different chemical composition to be stored and/or processed in a single pressure vessel while maintaining the different chemical compositions of the multiple solvent baths.

Abstract: The present invention relates to a process for treating a lipophilic fluid contained in an emulsion of water and lipophilic fluid. The process includes the steps of pretreating the emulsion, removing lipophilic fluid from the emulsion, and purifying the lipophilic fluid to remove at least a portion of the impurities collected during the use of the emulsion. Method options are provided for each of the aforementioned steps.

Abstract: The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a portion of the interior surfaces. A contaminated purge gas is produced by transferring a portion of the contamination from the interior surfaces into the purge gas. The contaminated purge gas is removed from the device and the process is continued until the contaminant concentration in the contaminated purge gas is below a predetermined level.

Abstract: The present invention relates to a process for treating a lipophilic fluid contained in an emulsion of water and lipophilic fluid. The process includes the steps of pretreating the emulsion, removing lipophilic fluid from the emulsion, and purifying the lipophilic fluid to remove at least a portion of the impurities collected during the use of the emulsion. Method options are provided for each of the aforementioned steps.

Abstract: The present invention involves a solvent vapor transfer device for holding an absorbent pad, which receives and disperses solvent vapors over a lacquer-based residue on a textile. A solvent is poured or dripped into an absorbent pad portion of the vapor transfer box, from which solvent vapors are released. The solvent vapors pass through the vapor transfer box and concentrate in a vapor chamber over the lacquer-based residue and textile. As the solvent vapors come into continuous contact with the lacquer-based residue, the residue begins to dissolve and soften. Upon sufficient dissolution, minute quantities of the liquid solvent may be applied directly to the partially dissolved residue and quickly suctioned into an extraction vacuum. This process may be repeated as necessary to achieve complete removal of the residue.

Abstract: A process for dry cleaning laundry articles comprising at least one dry cleaning step followed by at least one regeneration step wherein said regeneration step comprises contacting the articles with a regeneration composition comprising 0 to 10 wt. % of a surfactant; 0.001 to 10 wt. % of water; 0 to 50 wt. % of a cosolvent and the balance being organic dry cleaning solvent, preferably a non-flammable, non-chlorine containing organic dry cleaning solvent, wherein the regeneration composition comprises an aqueous phase having a pH of at least 5.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In an embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. Following the chemical treatment, the semiconductor structure is transferred directly to a second treatment vessel where it is rinsed with DI water and then dried. The second treatment vessel is flooded with both DI water and a gas that is inert to the ambient, such as nitrogen, to form a DI water bath upon which an inert atmosphere is maintained during rinsing. Next, an inert gas carrier laden with IPA vapor is fed into the second treatment vessel. After sufficient time, a layer of IPA has formed upon the surface of the DI water bath to form an IPA-DI water interface.

Abstract: A method and an apparatus for removing an organic film, such as a resist film, from a substrate surface are provided wherein a treatment liquid containing dissolved ozone, and preferably formed from liquid ethylene or propylene carbonate, or both, is contacted with the substrate having the organic film, and the organic film removed, wherein the apparatus contains (A) a treatment liquid delivery device, (B) a film contact device, (C) a liquid circulation device and (D) an ozone dissolution device.

Abstract: In a method of cleaning metal surfaces to be welded together, at least one jet carrying particles of solid carbon dioxide is caused to come into contact with the surfaces, where the solid carbon dioxide is allowed to sublime at the surfaces. The jet is formed by passing a stream of pressurised liquid carbon dioxide through a nozzle under pressure.

Abstract: A sequential process for dry cleaning laundry articles is provided comprising a) at least one non-aqueous dry cleaning step, b) at least one low-aqueous dry cleaning step, and, optionally, at least one rinsing step.

Abstract: The present invention provides, in one embodiment, a process (100) for cleaning a deposition chamber having multiple substrate stations contained therein. The process (100) includes a first cleaning step (110) that comprises maintaining the deposition chamber at a first pressure while passing a fluorocarbon gas into the deposition chamber. The first cleaning step (100) is conducted until an endpoint is reached. The process also includes a second cleaning step (120) that comprises maintaining the deposition chamber at a second pressure while passing the fluorocarbon gas into the deposition chamber. The process further includes a third cleaning step (130) that comprises maintaining the deposition chamber at a third pressure less than the first and second pressures while passing the fluorocarbon gas into the deposition chamber.

Abstract: This invention provides fluid-dispensing devices attachable to an air-intake system of an internal combustion engine for introducing an engine cleaner composition into the air intake system. The invention also provides methods of cleaning internal combustion engines using the fluid-dispensing devices.

Abstract: The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a portion of the interior surfaces. A contaminated purge gas is produced by transferring a portion of the contamination from the interior surfaces into the purge gas. The contaminated purge gas is removed from the device and the process is continued until the contaminant concentration in the contaminated purge gas is below a predetermined level.

Abstract: The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a portion of the interior surfaces. A contaminated purge gas is produced by transferring a portion of the contamination from the interior surfaces into the purge gas. The contaminated purge gas is removed from the device and the process is continued until the contaminant concentration in the contaminated purge gas is below a predetermined level.

Abstract: System and method for reducing damage to a semiconductor substrate when using cleaning fluids at elevated pressures to clean the semiconductor substrates. A preferred embodiment comprises applying the cleaning fluid at a first pressure for a first time period, wherein the first pressure is relatively low, and then increasing the pressure of the cleaning fluid to a pressure level that can effectively clean the semiconductor substrate and maintaining the pressure level for a second time period. The application of the cleaning fluid at the relatively low initial pressure acts as a temporary filler and creates a buffer of the cleaning fluid on the semiconductor substrate and helps to dampen the impact of the subsequent high pressure application of the cleaning fluid on the semiconductor substrate.

Abstract: Surface cleaning, chemical treatment and drying of semiconductor substrates is carried out using foam as a medium instead of a condensed phase liquid medium. In cleaning and chemical treatment, by introducing a foam into an overflow vessel the foam is caused to pass over the substrate in moving contact therewith. Drying of the substrate is carried out, using a water solution of carbon dioxide in a pressurizable vessel. By releasing the pressure in the vessel, a layer of foam is established on the surface of the solution. The solution is discharged from the vessel, causing the foam layer to pass over the substrate in moving contact therewith. The carbon dioxide reduces the surface tension of the water, thereby enabling the foam layer to be produced and also assisting in the elimination of water from the surface of the substrate. In both cases, the use of foam reduces materials requirements and also reduces the quantity of particles deposited onto the substrate in the treatment process.

Abstract: The present invention involves a solvent vapor transfer device for holding an absorbent pad, which receives and disperses solvent vapors over a lacquer-based residue on a textile. A solvent is poured or dripped into an absorbent pad portion of the vapor transfer box, from which solvent vapors are released. The solvent vapors pass through the vapor transfer box and concentrate in a vapor chamber over the lacquer-based residue and textile. As the solvent vapors come into continuous contact with the lacquer-based residue, the residue begins to dissolve and soften. Upon sufficient dissolution, minute quantities of the liquid solvent may be applied directly to the partially dissolved residue and quickly suctioned into an extraction vacuum. This process may be repeated as necessary to achieve complete removal of the residue.

Abstract: An unnecessary film is removed by cleaning gas flowing in a treatment vessel 8 for depositing a film on an object W to be processed such as a semiconductor wafer. In this case, the cleaning gas is preheated and activated by the gas heating mechanism 52 and the cleaning gas flows in the treatment vessel 8 in this state. By doing this, an unnecessary film in the treatment vessel made of quartz is removed effectively without damaging the treatment vessel.

Abstract: Method for processing an article with a dense processing fluid in a processing chamber while applying ultrasonic energy during processing. The dense fluid may be generated in a separate pressurization vessel and transferred to the processing chamber, or alternatively may be generated directly in the processing chamber. A processing agent may be added to the pressurization vessel, to the processing chamber, or to the dense fluid during transfer from the pressurization vessel to the processing chamber. The ultrasonic energy may be generated continuously at a constant frequency or at variable frequencies. Alternatively, the ultrasonic energy may be generated intermittently.

Abstract: A process for removing dopant ions from a semiconductor substrate includes exposing the substrate to a non-aqueous organic solvent in liquid and/or vapor form.

Abstract: A method of cleaning a fouled RO membrane in a module for RO separation, the membrane having feed side and permeate side, the foulant accumulating at the feed side.

Abstract: A combination of parallel processes is disclosed to provide optimal re-mediation operations for contaminated soil. Soils with high levels of heavy petroleum hydrocarbons are directed to a thermal process for destruction in a combustion process. Carbon dioxide generated and recovered in the thermal process is employed as a solvent in a solvent process to clean other soils of petroleum hydrocarbons and certain chlorinated hydrocarbon compounds. In the solvent process, contaminated soils are run through a closed soil separator where the soils are washed with carbon dioxide. The carbon dioxide is then dried from the soil and the soil is sent for segregation. Soils with the lightest forms of hydrocarbon contamination (gasoline, etc.) are subjected to a vaporization process utilizing heat energy generated in the thermal process to heat the soil, under a partial vacuum, and the vapors generated are captured, condensed, and recovered as product.

Abstract: A method and apparatus are provided for removing solid and/or liquid residues from electronic components such as semiconductor wafers utilizing liquid or supercritical carbon dioxide which is solidified on the surface of the wafer and then vaporized and removed from the system. In a preferred embodiment the solidification and vaporizing steps are repeated (cycled) before removal of the CO2 from the vessel. The residues are carried away with the vaporized carbon dioxide.

Abstract: The removal of ceramic material from the interior of cast metallic components is accomplished in a closed system. A vessel within the system is filled with a chemical leaching fluid that immerses the cast component having the ceramic material and/or ceramic cores therein. The leaching fluid is superheated and boiling is controlled by varying the pressure within the closed system without changing the molecules in the vessel.

Abstract: A plasma CVD device includes a reaction chamber, a remote plasma discharge chamber that is provided remotely from the reaction chamber, and piping that links the reaction chamber and the remote plasma discharge chamber. The remote plasma discharge chamber activates cleaning gas by plasma discharge energy, and the activated cleaning gas is introduced into the inside of the reaction chamber through the piping and changes solid substances that adhere to the inside of the reaction chamber in consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following: (a) the remote plasma discharge chamber generates active species using radio frequency oscillating output energy of a preselected frequency; (b) the piping is made of materials that are not corroded by the active species; or (c) the piping is provided with a through-flow type valve.

Abstract: A method and an apparatus for removing an organic film such as a resist film from a substrate surface are provided. These are very safe even at high temperatures, and use a treatment liquid which can be recycled and reused. A treatment liquid typically formed from liquid ethylene carbonate, propylene carbonate, or a liquid mixture of these two compounds, and in particular such a treatment liquid containing dissolved ozone, is contacted with a substrate with an organic film, and the organic film is removed.

Abstract: A method of treating semiconductor wafers in a sealed container is provided and includes transferring and vertically placing a plurality of wafers in the container and sealing the container. An inert gas is fed into the sealed container and a quantity of warm pure water is fed into the sealed container sufficient to completely submerge the plurality of wafers and establish a level of the warm pure water in the sealed container. A vapor or fog of an organic solvent is fed into at least a space in the sealed container above the level of the warm pure water and is then terminated at a prescribed time. The plurality of wafers is dried by aspirating the warm pure water through an outlet in the bottom of the container wherein the pressure in the container is reduced during the aspiration. The inert gas is fed into the sealed container until at least the termination of the drying of the plurality of wafers.

Abstract: Provided is a substrate processing apparatus capable of supplying pure water that is stabilized with respect to the concentration of nitrogen gas. First and second nitrogen concentration meters to measure the nitrogen gas concentration of pure water are respectively disposed before and after a concentration change part that can dissolve and degas nitrogen gas by using a hollow fiber type separation membrane. In order to maintain the nitrogen gas concentration of pure water at a target concentration value, the dissolution and degassing in the concentration change part are controlled by adjusting the degree to which a first valve on a nitrogen gas supply path and a second valve on a nitrogen gas degassing path are opened, based on a concentration difference between a target concentration and both of the first and second nitrogen concentration meters.

Abstract: Method and apparatus for controlling the migration of reaction by-product gases from a chemical vapor deposition (CVD) process chamber to a transfer vacuum chamber shared by other process chambers. Separate regulated flows of purge gas are provided to the CVD process chamber and the transfer vacuum chamber before establishing a pathway for substrate transfer. A pressure differential is created between the transfer vacuum chamber and the CVD process chamber that reduces or prevents the migration of CVD reaction by-product gases arising from the establishment of the substrate transfer pathway. While the pathway is established, a directional flow of purge gas is maintained from the transfer vacuum chamber into the CVD process chamber.

Abstract: A cleaning gas includes HF gas whose concentration is greater than or equal to 1 vol % and oxygen containing gas whose concentration ranges from 0.5 to 99 vol %. The oxygen containing gas includes at least one of O2 gas, O3 gas, N2O gas, NO gas, CO gas and CO2 gas. The cleaning gas is employed to remove a deposited material generated in a vacuum treatment apparatus for producing a thin film of at least one of Ti, W, Ta, Ru, Ir, a compound thereof and an alloy thereof.

Abstract: Carbon dioxide is purified through the use of catalytic oxidation. Carbon dioxide is exposed to at least one catalyst, oxidizing at least a portion of the nonvolatile organic residues to form purified carbon dioxide that is directed to an application. Carbon dioxide that is in a near-critical, critical, or supercritical phase can be exposed to the catalyst.

Abstract: A device and method that cleans microwave ovens through a chemical action, specifically to an agent that is placed into the microwave oven, and then activated by operating the oven for a period of time. Different embodiments include a devise composed of an open cell container filled with solution; an open cell container with an attached sponge(s) and filled with solution; and a sponge that contains a cleaning solution in hydrant or dehydrated form. In some of the described embodiments, the devise has a tear off membrane seal to maintain the solution within the cell prior to use. Another embodiment described has a bottle hanger attached to a cell. All embodiments maintain a process to absorb excess microwave energy.

Abstract: Toner xerographically adhered to a material, such as a sheet of paper, may be removed using a solvent-based or solventless approach. The application of ultrasonic tamping, scraping and brushing may aid in removing toner particles. In a solvent-based approach, a solvent may be applied generally or the solvent may be targeted specifically to the toner covered portions of the material to loosen the adhesive securement of the toner to the material. Thereafter, the toner is subjected to a mechanical abrasion using ultrasonic and physical agitation to cause flaking of the toner.

Abstract: A magnetic multi-layer film manufacturing apparatus has a transferring chamber, a plurality of film-depositing chambers, and a robotic transferring device. Each film-depositing chamber has a rotatable substrate holder, a plurality of targets positioned at an incline on an opposing interior surface from the substrate holder, and a double layer rotating shutter mechanism and is controllable to deposit at least one layer of a magnetic multi-layer film structure. Magnetic multi-layer film structures are formed by depositing a plurality of magnetic films divided into a plurality of groups, each one of the plurality of groups deposited in an associated one of the plurality of film-depositing chambers continuously in a laminated state. A first division between successive groups of magnetic films is between a metal oxide film and a magnetic layer continuous therewith and a second division is between an antiferromagnetic layer and a magnetic layer continuous therewith.

Abstract: A cleaning agent or a rinsing agent having no flash point which comprises a chlorine-free fluorine-containing compound having a vapor pressure at 20° C. of 1.33×103 Pa or more and one or more components having a vapor pressure at 20° C. less than 1.33×103 Pa and optionally an additive such as an antioxidant; a method for cleaning which comprises cleaning with the cleaning agent and rinsing and/or vapor cleaning utilizing a vapor being generated by boiling the cleaning agent or a condensate thereof; a method for separating a soil which comprises contacting a cleaning agent in a cleaning tank with a condensate of the vapor of the cleaning agent in a soil separating tank, to thereby continuously separate and remove a soil contained in the cleaning agent; and a cleaning apparatus.