Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, near the edge, in which the liquid is applied to a first surface, flows essentially radially to the outside to the peripheral-side edge of the wafer-shaped article and around this edge onto the second surface, the liquid wetting a defined section near the edge on the second surface and thereupon being removed from the wafer-shaped article.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: A wafer cleaning apparatus with multiple wash-heads is applied in chemical and mechanical polishing process after wafer cleaning. The wafer cleaning apparatus device includes a supporting base, which supporting base comprises a driving device and at least one fluid pipe. A rotation module is also included in the wafer cleaning apparatus. The top side of the rotation module is connected with the driving device. Besides, the rotation module comprises multiple wash-heads and at least one nozzle. The bottom side of wash-head here is contacted with the surface of the wafer. By using driving device, the rotation module can be wholly driven. Also, multiple wash-heads can rotate individually along a cleaning path for cleaning wafer. The fluid was jetted from nozzle and assistant to clean wafer through fluid pipe. The prior art of single wafer wash-head is easily to reform a cleaning dead angle in wafer cleaning process.

Abstract: An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying cleaning solution onto the wafer, a cover for covering an upper part of the chamber, and a light source. The cleaning solution, preferably one of ozone water, hydrogen water, or electrolytic-ionized water, may be heated for a short time and used to clean the wafer.

Abstract: A substrate holding apparatus is provided. The substrate holding apparatus includes a chuck yoke, a plurality of arm assemblies, and a plurality of gripper assemblies. A first end of each of the arm assemblies is connected to the chuck yoke and each of the arm assemblies has a spring. A second end of each of the arm assemblies is connected to a respective one of the plurality of grippers. The chuck yoke is capable of rotating so as to move each of the plurality of arm assemblies and respective plurality of gripper assemblies into either a closed position or an open position. A compression force from each of the springs is applied to a substrate when the grippers are moved to the closed position.

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract: A system for processing a workpiece includes a process head assembly and a base assembly. The process head assembly has a process head and an upper rotor. The base assembly has a base and a lower rotor. The base and lower rotor have magnets wherein the upper rotor is engageable with the lower rotor via a magnetic force created by the magnets. The engaged upper and lower rotors form a process chamber where a semiconductor wafer is positioned for processing. Process fluids for treating the workpiece are introduced into the process chamber, optionally while the processing head spins the workpiece. Additionally, air flow around and through the process chamber is managed to reduce particle adders on the workpiece.

Abstract: An apparatus that includes a rotatable single wafer holding bracket with one or more wafer supports disposed on the single wafer holding bracket, wherein the one or more wafer supports position a center of a wafer to be off-center from an axis of rotation of the single wafer holding bracket.

Abstract: The present invention provides a system (200, 300) for remediating aberrations along the perimeter of a semiconductor wafer (202). The system includes a cleaning apparatus (204) within which the wafer is spun within a confined area. A chuck (208) defines the confined area, having a sidewall that extends above the upper surface (214) of the wafer and surrounds the perimeter of the wafer. The chuck also has a bottom wall, with an aperture formed therein, beneath the wafer. The system includes an isolation barrier (220), disposed atop the bottom wall of the chuck and around the aperture, in proximity to the lower surface so of the wafer. This forms a narrow gap (226) between the barrier and the wafer. A pressurized source forcefully directs a gas (218) at and along the lower surface of the wafer. The system also includes a remediation solution (228) that is applied to the upper surface of the wafer.

Abstract: The substrate processing apparatus has an enclosure structure enclosing a substrate support member to define a processing space. The enclosure structure has an opening closed by a shutter. A processing fluid supply unit, which supplies processing fluid, such as chemical liquid, is accommodated in a housing. The processing fluid supply unit accommodated in the housing is advanced into the processing space through the opening of the enclosure structure to feed the processing fluid onto the substrate supported by the substrate support member.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, in which a mask is kept at a defined short distance to the wafer-shaped article such that liquid can be retained between the mask and the defined area of the wafer-shaped article by capillary forces.

Abstract: According to the present invention, a metal and a barrier material, such as copper and a tantalum-based barrier material, are effectively removed from the wafer edge and especially from the bevel by using an etchant that comprises a diluted mixture of hydrofluoric acid and nitric acid. The method is compatible with currently available etch modules for removing metal from the wafer edge, wherein, depending on the hardware specifics, copper, barrier material and dielectric material may be removed in a single etch step, or a first etch step may be performed substantially without any nitric acid so as to avoid the formation of nitric oxides. In this way, the formation of instable layer stacks may be substantially avoided, thereby reducing the risk of material delamination from the substrate edge.

Abstract: An automatic cleaning apparatus and/or method for periodically cleaning a filling machine during a filling cycle without the need for human interaction to initiate the cleaning process. In some embodiments, a controller automatically initiates a cleaning sequence at predetermined intervals. The predetermined intervals can be a time interval, such as every thirty minutes for example, or based upon filling characteristics, such as after a predetermined number of containers are filled or a predetermined amount of product has flowed through the filling machine. In some embodiments, the controller performs many operations during the cleaning process. For example, the controller can prevent containers from entering the filling machine and control the operation of a cleaning manifold. Upon completion of the cleaning operation, the controller waits a predetermined period while filing operations commence before automatically initiating the next cleaning operation.

Abstract: A particle capture system includes a container sized to receive a structural disc drive component. A fixture is able to maintain the disc drive component within a spray zone in the container, and a first nozzle in the container is connected to a fluid source and is oriented to direct fluid at the spray zone. A particle trap is connected to a fluid outlet of the container and is able to trap particles from fluid exiting the container through the fluid outlet.

Abstract: An indexer part, removal processing part, interface, and dry processing part are disposed adjacent to each other in a row. That is, the removal processing part that performs removal processing of an organic matter by using a removal liquid is disposed adjacent to the indexer part loading and unloading a substrate with respect to the exterior of an apparatus. The interface that gives and receives a substrate between the removal processing part and dry processing part is interposed between the removal processing part and the dry processing part that performs dry processing of a substrate after passing through the removal processing. This enables to provide a substrate processing apparatus that can completely dry the substrate after a reaction product removal processing.

Abstract: A first gas nozzle and a second gas nozzle are fixedly provided in the vicinity of the forward end of a nozzle arm. The nozzle arm is rotated along a locus R while a substrate rinsed with deionized water is rotated, for discharging nitrogen gas from the first and second gas nozzles. Visible moisture is loosely expelled from the upper surface of the substrate by spraying the nitrogen gas from the first gas nozzle, and moisture slightly remaining on a fine pattern or the like can also be completely removed by spraying the nitrogen gas from the second gas nozzle to the same region of the substrate as that sprayed with the nitrogen gas by the first gas nozzle. Consequently, the surface of the substrate can be stably and reliably dried. Thus, a substrate processing apparatus capable of stably and reliably drying the surface of the substrate is provided.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, near the edge, in which the liquid is applied to a first surface, flows essentially radially to the outside to the peripheral-side edge of the wafer-shaped article and around this edge onto the second surface, the liquid wetting a defined section near the edge on the second surface and thereupon being removed from the wafer-shaped article.

Abstract: Apparatuses and methods of processing a substrate. The apparatus includes a wet-cleaning chamber, a drying chamber, and a substrate transferring chamber which transfers a substrate to and from the wet-cleaning chamber and the drying chamber. The drying chamber is one of a supercritical drying chamber or a low pressure drying chamber. The wet-cleaning chamber is one of a single-wafer cleaning chamber, a horizontal spinning chamber, a megasonic wet-cleaning chamber, or a horizontal spinning chamber having acoustic waves transmitted to the substrate.

Abstract: Methods and systems for preparing a substrate implementing a surface tension reducing process are provided. In one example, a substrate preparation system includes a chuck which fingers for edge gripping the substrate. The chuck is hollow to provide simultaneous access to both active and backside surfaces of the substrate, and is configured to rotate the substrate. The system includes dispense arms positioned over the substrate surfaces. The dispense arms are capable of moving between a center region and a periphery of the substrate surfaces, and each dispense arm includes a pair of supply lines for delivering fluids over the substrate surfaces. A connection couples the upper dispense arm with the lower dispense arm so that the dispense arms synchronously move between the center region and the periphery of the substrate, and remain aligned on opposite surfaces of the substrate.

Abstract: A high-pressure processing apparatus includes a processing vessel including a processing chamber formed therein to perform a certain process onto an object in the processing chamber; fluid feeding means which feeds a high-pressure fluid into the processing chamber; fluid discharging means which discharges the high-pressure fluid from the processing chamber; an agitating unit which is arranged in the processing chamber and is operative to flow the high-pressure fluid over the object by relative rotation to the processing vessel; a communicating channel which is formed in the processing vessel to communicate inside and outside of the processing chamber; a rotary driving member which is coupled to the agitating unit via a shaft portion provided in the communicating channel; and a sealing portion which is provided between the shaft portion and the processing vessel to disconnect the processing chamber from the rotary driving member.

Abstract: A system and method for processing an edge of a substrate includes an edge roller and a first proximity head. The first proximity head being mounted on the edge roller. The first proximity head capable of forming a meniscus and including a concave portion and multiple ports opening into the concave portion. The concave portion being capable of receiving an edge of a substrate and the ports including at least one process liquid injection port, at least one vacuum port and at least one surface tension control port.

Abstract: A cleaning apparatus includes upper and lower nozzle assemblies supplying a cleaning liquid to edge and bottom sections of a semiconductor substrate. The upper nozzle assembly has a first nozzle supplying the cleaning liquid onto the edge section, and second and third nozzles supplying a nitrogen gas for preventing the cleaning liquid from moving into a center portion of the semiconductor substrate. The cleaning liquid supplied to the edge section flows from the edge section towards a side section of the semiconductor substrate due to the rotation of the semiconductor substrate. An ultrasonic wave generator is provided above the edge section for generating ultrasonic waves. The ultrasonic waves are applied to the cleaning liquid supplied onto the edge and bottom sections, thereby improving the cleaning efficiency. The cleaning apparatus has a guide to guide the cleaning liquid supplied to the edge section toward the side section.

Abstract: A system for processing wafers includes a robot moveable within an enclosure to load and unload workpieces into and out of workpiece processors. A processor includes an upper rotor having alignment pins, and a lower rotor having one or more openings for receiving the alignment pins to form a processing chamber around the workpiece. The alignment pins center the workpiece relative to a rotor spin axis and to an etch or drain groove in the upper rotor. A first fluid outlet delivers processing fluid to a central region of the workpiece. The processing fluid is distributed across the workpiece surface via centrifugal force generated by spinning the processing chamber. Purge gas is optionally delivered into the processing chamber through an annular opening around the first fluid outlet to help remove processing fluid from the processing chamber.

Abstract: An apparatus and method for automatically collecting metallic impurities of a semiconductor wafer. In one aspect, an apparatus includes an air tight process chamber including a loading unit for loading the semiconductor wafer and unloading unit for unloading the semiconductor wafer; a vapor phase decomposition unit disposed in the process chamber for decomposing a silicon oxide layer on the semiconductor wafer; and a scanning unit disposed in the process chamber for scanning the semiconductor wafer to collect the metallic impurities. The scanning unit includes a scanning solution bottle for obtaining scanning solution that is used for absorbing metallic impurities on the semiconductor wafer; a scanning arm capable of downward, upward, and rotational movement; and a nozzle coupled to the scanning arm for drawing in scanning solution from the scanning solution bottle, and for forming a droplet of scanning solution that cohers to the nozzle when scanning a semiconductor wafer to collect metallic impurities.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: A method including the step of providing a substrate having a contact pad, and an under bump metallurgy overlying the contact pad, and a photoresist layer overlying the under bump metallurgy, and wherein the photoresist layer has an opening defined therein down to the under bump metallurgy and aligned with the contact pad. Pretreating the substrate with the first wetting solution prior to plating a first seed layer over the under bump metallurgy. Thereafter, plating a first seed layer is plated onto the under bump metallurgy.

Abstract: An apparatus for collecting impurities on a semiconductor wafer includes an airtight process chamber, a rotary chuck disposed in the process chamber for rotating and horizontally supporting the semiconductor wafer, a first scanning unit for forming a droplet of a first scanning solution and for scanning an upper surface of the semiconductor wafer rotated by the rotary chuck with the droplet to collect first impurities, a driving unit for tilting the rotary chuck and the semiconductor wafer supported on the rotary chuck, and a second scanning unit for receiving a second scanning solution for collecting second impurities from an edge portion of the semiconductor wafer, the second scanning solution being in contact with the edge portion of the semiconductor wafer tilted by the driving unit and rotated by the rotary chuck so that the second scanning solution scans the edge portion of the semiconductor wafer.

Abstract: A substrate processing system has a first substrate cleaner and a second substrate cleaner. The first substrate cleaner comprises a forward portion and a rear portion. The forward portion includes a rotatable substrate support. The rear portion is vertically thicker than the forward portion. The rear portion includes a device for rotating the support. The second substrate cleaner includes the elements included in the first substrate cleaner. The second substrate cleaner is stacked above the first substrate cleaner with the forward portions being vertically aligned and the rear portions being vertically aligned. A space is formed between the forward portions to permit access to the forward portion of the first substrate cleaner and to permit ample gas flow into the area between the forward portions of the first and the second substrate cleaners.

Abstract: A single wafer type wet-cleaning apparatus for effectively preventing chemical fluids from flowing to the back face of a wafer when the back face thereof is wet-cleaned by chemical fluids, wherein purified water is injected and supplied to the back face of the wafer while a plurality of chemical fluids is sequentially supplied vertically from above to the wafer, which is rotatably supported, so that the purified water cleans the back face of the wafer and effectively prevents the chemical fluids from flowing to the back face of the wafer.

Abstract: Appliance (100) having a housing (101) of compact dimensions wherein articles, particularly nursing bottles (123, 179) and accessories (119), are treated inside a chamber (1). Treatment is achieved with dosed amounts of fresh water retrieved from a fresh water tank (7), by successive cycles of washing, rinsing, and sterilizing. The treatment cycles use additives and high-speed jets of heated liquid and of steam, which are filtered for repeated use. At the end of the treatment, liquids are purged to a wastewater tank (33). Self-treatment of the appliance is provided by use of the same treatment cycles. The appliance is independent of external water supply, portable and automatic for use in situ, where electricity supply is available.

Abstract: A machine for cleaning containers such as flat media carriers has inside and outside arrays of nozzles arranged to spray a cleaning solution onto containers supported on a spinning rotor in a chamber. The cleaning solution, a mixture of water and a detergent or surfactant, is prepared by drawing out surfactant directly from a surfactant bulk storage vessel by means of a metering pump. The flow rate of the water is measured by a flow meter and in combination with the metering pump, a proper amount of surfactant is injected into the water line to produce a mixture with a desired surfactant concentration for removing contaminants. The mixture is injected into the water line at a mixing control valve to ensure that the water and surfactant are thoroughly mixed before being injected into the media carrier.

Abstract: A system for processing semiconductor wafers has process units on a deck of a frame. The process units and the deck have precision locating features, such as tapered pins, for precisely positioning the process units on the deck. Process units can be removed and replacement process units installed on the deck, without the need for recalibrating the load/unload robot. This reduces the time needed to replace process units and restart processing operations. Liquid chemical consumption during processing is reduced by drawing unused liquid out of supply lines and pumping it back to storage.

Abstract: The present invention can remove particles such as dust by flowing solvent gas such as CO2 through a line filter and eject it from a nozzle so as to be converted to solid particles or liquid droplets and eject to a workpiece to be cleaned so as to clean particles or organic materials. It is possible to make the solvent to a solid particle or liquid droplet by adjusting a gap between the nozzle and the workpiece to be cleaned; thus, it is possible to select the most preferable state according to the extent of the adhesion of organic material to the workpiece to be cleaned. Also, it is possible to remove particles such dust in the solvent by a line filter; thus, it is not necessary to use highly pure expensive solvent, and it is possible to reduce the running cost of the apparatus.

Abstract: A centrifugal processor includes an elongated inlet and outlet in fluid communication with a rotor housing having an eccentric bowl. A rotor having fan blades and adapted to hold flat media is rotatably disposed within the rotor housing. An intake gate is pivotably mounted to the rotor housing to swing about the rotor into a closed position during a rinse mode and into an open position during a drying mode. The gate has a wedge that is designed to almost contact the rotor when the gate is in the open position for drying. The geometry of the elongated inlet, outlet, and eccentric bowl, in combination with the design of the rotor and that of the intake gate, work together to create a cross flow fan having a flow path across the flat media and one that exposes the flat media to large volumes of incoming air only once.

Abstract: The present invention provides a megasonic cleaning apparatus configured to provide effective cleaning of a substrate without causing damage to the substrate. The apparatus includes a probe having one of a variety of cross-sections configured to decrease the ratio of normal-incident waves to shallow-angle waves. One such cross-section includes a channel running along a portion of the lower edge of the probe. Another cross-section includes a narrow lower edge of the probe. Another cross-section is elliptical. Another cross-section includes transverse bores originating in the lower edge of the probe. As an alternative to, or in addition to, providing a probe having a cross-section other than circular, the present invention may also provide a probe having a roughened lower surface.

Abstract: The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

Abstract: A chemical solution treatment apparatus for dissolving and removing ruthenium-based metal adhering to a substrate by a chemical solution, includes: a chemical solution treatment unit; a reservoir unit; and a chemical solution circulation system. The chemical solution inside treatment unit comprises a chemical solution supplying nozzle, and a recovering mechanism. The reservior unit has a structure having a clearence part to be in contact with the chemical solution so that gas components derived from the ruthenium-based metal dissolved and removed in said chemical solution treatment are volatilized outside the chemical solution during circulation of the chemical solution, and comprises an exhaust duct.

Abstract: A substrate dual-side processing apparatus has a processor to apply a specific process to a front surface and a rear surface of a substrate, a reversing unit to reverse the substrate and a substrate-transfer mechanism to transfer the substrate between the processor and the reversing unit. The reversing unit has a holder for holding the substrate when the substrate is being transferred to and from the substrate-transfer mechanism and a rotating mechanism for rotating the substrate, thus the substrate being reversed while held by the holders. The reversing unit may have a pair of holders for holding the substrate at the front and rear surfaces, a drive mechanism for driving the pair of holders so that the holders become close to or apart from each other and a rotating mechanism for rotating the substrate, thus the substrate being reversed while held by the holders.

Abstract: Where a substrate such as a semiconductor wafer held in a process space in a process chamber consisting of an outside chamber and an inside chamber is subjected to a cleaning processing, a chemical agent such as IPA or a solvent having a surfactant added thereto is supplied in the form of a mist or a vapor toward the substrate under the sate that the substrate is stopped or rotated at a low speed after processing with a chemical agent and a subsequent rinsing processing with a pure water. After the supply of the chemical agent is stopped, the substrate is rotated at a rotating speed higher than said low speed so as to centrifugally remove the chemical agent attached to the substrate.

Abstract: A semiconductor wafer cleaning apparatus includes a gas spraying unit, having a gas injection tube and a gas guard extending therearound, for spraying cleaning gas into a water layer formed on a wafer. The gas guard forms a small chamber just above the water layer, so that the partial pressure of gas injected from the gas injection tube is increased in the small chamber, whereupon the cleaning gas readily dissolves in the water layer. As a result, a cleaning solution having a high concentration of cleaning gas is produced, whereby the cleaning efficacy of the solution is high. Subsequently, a drying gas, such as isopropyl alcohol, for drying the wafer can be ejected onto the water layer using the gas spraying unit. Thus, the semiconductor wafer cleaning apparatus has a simple structure.

Abstract: Contaminants are removed from a semiconductor wafer by the in-situ generation of oxidizing species. These active species are generated by the simultaneous application of ultra-violet radiation and chemicals containing oxidants such as hydrogen peroxide and dissolved ozone. Ultrasonic or megasonic agitation is employed to facilitate removal. Radicals are generated in-situ, thus generating them close to the semiconductor substrate. The process chamber has a means of introducing both gaseous and liquid reagents, through a gas inlet, and a liquid inlet. O2, O3, and H2O vapor gases are introduced through the gas inlet. H2O and H2O2 liquids are introduced through the liquid inlet. Other liquids such as ammonium hydroxide (NH4OH), hydrochloric acid (HCI), hydrofluoric acid (HF), and the like, may be introduced to further constitute those elements of the traditional RCA clean. The chemicals are premixed in a desired ration and to a predetermined level of dilution prior to being introduced into the chamber.

Abstract: Apparatuses and methods of processing a substrate. The apparatus includes a wet-cleaning chamber, a drying chamber, and a substrate transferring chamber which transfers a substrate to and from the wet-cleaning chamber and the drying chamber. The drying chamber is one of a supercritical drying chamber or a low pressure drying chamber. The wet-cleaning chamber is one of a single-wafer cleaning chamber, a horizontal spinning chamber, a megasonic wet-cleaning chamber, or a horizontal spinning chamber having acoustic waves transmitted to the substrate.

Abstract: In a method for processing a workpiece to remove material from a first surface of the workpiece, steam is introduced onto the first surface under conditions so that at least some of the steam condenses and forms a liquid boundary layer on the first surface. The condensing steam helps to maintain the first surface of the workpiece at an elevated temperature. Ozone is provided around the workpiece under conditions where the ozone diffuses through the boundary layer and reacts with the material on the first surface. The temperature of the first surface is controlled to maintain condensation of the steam.

Abstract: A foreign matter removing apparatus for removing foreign matter from a surface of a substrate. The apparatus is provided with: a substrate rotating mechanism which holds and rotates the substrate; and a fluid mixture supplying mechanism which generates a fluid mixture by mixing a treatment liquid and a gas, and supplies the fluid mixture onto the surface of the substrate held by the substrate rotating mechanism. The treatment liquid may be deionized water or a resist removing liquid. Examples of the foreign matter to be removed include a resist film formed on the substrate and a residue remaining on the surface of the substrate after ashing of the resist film.

Abstract: A system and method for cleaning boxes used for handling flat media includes a rotor rotatably mounted within an enclosure, with spray nozzles in the enclosure for spraying fluid toward the rotor. The rotor has at least one box holder assembly for holding a box. At least one retainer bar is located on the rotor for engaging a front section of the box to retain the box in the box holder assembly during rotation of the rotor. The retainer bar is preferably moveable from a first position where the retainer bar restrains the box on the box holder assembly, to a second position where the retainer bar is moved away from the box. The box holder assembly may alternatively include a base with a plurality of grooved elements thereon that are adapted to engage a flange on the box for securing the box to the box holder assembly.

Abstract: An apparatus for preparing a wafer is provided. The apparatus includes a wafer backside plate and a central shaft. The wafer backside plate has a top surface that includes a cylindrical edge lip, which defines a central aperture. The central shaft is designed to fit within the central aperture. The wafer backside plate is designed to automatically slide between an up position during rotational wager processing and a down position when the wafer is not in rotational wafer processing. A gap defined between the top surface of the wafer backside plate and the wafer is less when the wafer backside plate is in the up position than when the wafer backside plate is in the down position.

Abstract: A cleaning apparatus for a lens defining opposed top and bottom surfaces and a peripheral edge. The cleaning apparatus comprises a rotatable base having a plurality of arms pivotally connected thereto and rotatable therewith. The arms are configured to releasably engage the peripheral edge of the lens. The cleaning apparatus further comprises a steam conduit including a dispensing nozzle which is selectively positionable in a prescribed orientation relative to the lens mounted within the arms, the dispensing nozzle being operative to propel steam towards at least one of the top and bottom surfaces of the lens while the lens is being spun by the rotation of the base and the arms.

Abstract: A method of cleaning and maintenance used for a rotational etching tool, combining the physical characteristics of water (splashed off after striking the surface of a spinning wafer) and a PM (preventive maintenance) computer program, can automatically and quickly clean the interior of the etching tool. By setting the appropriate parameters of PM program, single or all of process chambers can be well cleaned. Also, the DI water dropping positions on the wafer can be altered to create more splashing angles. To clean the sidewalls of the etching chambers, the wafer supporting means is moved between the process chamber and the rotating speed thereof is preferably alter while it is moving. The PM program of the present invention can be executed whenever the cleaning job needs to be done. It not only is timesaving and easy to apply, but also keeps the wafer in a almost-no-particle environment while being etched.

Abstract: A single wafer type wet-cleaning technique for effectively preventing chemical fluids from flowing to the back face of a wafer when the back face thereof is wet-cleaned by chemical fluids, wherein purified water is injected and supplied to the back face of the wafer while a plurality of chemical fluids is sequentially supplied vertically from above to the wafer, which is rotatably supported, so that the purified water cleans the back face of the wafer and effectively prevents the chemical fluids from flowing to the back face of the wafer.

Abstract: A high-pressure processing apparatus includes a processing vessel including a processing chamber formed therein to perform a certain process onto an object in the processing chamber; fluid feeding means which feeds a high-pressure fluid into the processing chamber; fluid discharging means which discharges the high-pressure fluid from the processing chamber; an agitating unit which is arranged in the processing chamber and is operative to flow the high-pressure fluid over the object by relative rotation to the processing vessel; a communicating channel which is formed in the processing vessel to communicate inside and outside of the processing chamber; a rotary driving member which is coupled to the agitating unit via a shaft portion provided in the communicating channel; and a sealing portion which is provided between the shaft portion and the processing vessel to disconnect the processing chamber from the rotary driving member.