Abstract: A nozzle is stored in a nozzle storage hole of a waiting pod. In this state, a cleaning liquid is discharged to an outer peripheral surface of the nozzle from a plurality of discharge ports. Thus, a coating liquid and its solidified matter adhering to the nozzle are dissolved and removed from the nozzle. Subsequently, a metal removal liquid is discharged from a plurality of discharge ports to the outer peripheral surface of the nozzle. Thus, a metallic component remaining on the nozzle is dissolved and removed from the nozzle. Further, pure water is discharged to the outer peripheral surface of the nozzle from the plurality of discharge ports, and the metal removal liquid adhering to the nozzle is cleaned away.

Abstract: The present invention is in the field of chemical cleaning and surface treatments for a stainless steel substrate. In particular, the present invention provides a method, kit and use of specific solutions for removing and preferably preventing the formation of rouging (e.g. class I, II and/or III) on a stainless steel substrate, which may be used as processing station or production unit.

Abstract: A thickening agent for toilet bowl water including a pellet assembly with a thickening agent assembly and a toilet tank assembly. Pellet assembly contains has a pellet member. The pellet includes a side stamp located below the pellet assembly. The pellet circles the thickening agent assembly. Thickening agent assembly includes a thickening agent. The protruding face of the thickening agent extends from a top surface of the pellet assembly. Toilet tank assembly includes a toilet tank and a toilet bowl. A side stamp is used to stick the pellet member and can be placed inside toilet tank for thickening water with thickening agent assembly when flushing toilet tank.

Abstract: Described herein is a continuous coil pretreatment process used to treat the surface of an aluminum alloy sheet or coil for subsequent deposition of an acidic organophosphorus compound. The process can include applying a cleaner to a surface of an aluminum sheet or a coil; etching the surface of the aluminum sheet or the coil with an acidic solution; rinsing the surface of the aluminum sheet or the coil with deionized water; applying to the surface of the aluminum sheet or the coil a solution of an acidic organophosphorus compound; rinsing the surface of the aluminum sheet or the coil with deionized water; and drying the surface of the aluminum sheet or the coil.

Abstract: A substrate processing method is provided, which includes: a substrate holding step of causing a substrate holding unit to hold a substrate; an ozone-containing hydrofluoric acid solution supplying step of supplying an ozone-containing hydrofluoric acid solution containing ozone dissolved therein a hydrofluoric acid solution to one major surface of the substrate held by the substrate holding unit; a brush-cleaning step of cleaning the one major surface of the substrate by bringing a cleaning brush into contact with the one major surface of the substrate after the ozone-containing hydrofluoric acid solution supplying step; and an ozone water supplying step of supplying ozone water to the one major surface of the substrate before start of the brush-cleaning step after the ozone-containing hydrofluoric acid solution supplying step or in the brush-cleaning step.

Abstract: Provided are formulations that offer a high cleaning effect on inorganic particles, organic residues, chemical residues, reaction products on the surface due to interaction of the wafer surface with the Chemical Mechanical Planarization (CMP) slurry and elevated levels of undesirable metals on the surface left on the semiconductor devices after the CMP. The post-CMP cleaning formulations comprise one or more organic acid, one or more polymer and a fluoride compound with pH<7 and optionally a surfactant with two sulfonic acid groups.

Abstract: A method for decontaminating a metal surface exposed to radioactive liquid or gas during operation of a nuclear facility comprises an oxidation step wherein a metal oxide layer on the metal surface is contacted with an aqueous oxidation solution comprising a permanganate oxidant for converting chromium into a Cr(VI) compound and dissolving the Cr(VI) compound in the oxidation solution; and a first cleaning step wherein the oxidation solution containing the Cr(VI) compound is directly passed over an anion exchange material and the Cr(VI) compound is immobilized on the anion exchange material. The method provides for substantial savings of radioactive waste and produces chelate-free waste.

Abstract: A cleaning device for removing contamination on a substrate holder used with an electroplating cell includes an arm, a cleaning agent supplier, a nozzle and a receiver. The cleaning agent supplier is coupled to the arm and configured to supply a cleaning agent. The nozzle is coupled to the cleaning agent supplier and configured to spray the cleaning agent onto the substrate holder to remove the contamination. The receiver is coupled to the arm and configured to receive the cleaning agent after the cleaning agent is sprayed onto the substrate holder.

Abstract: Cleaning compositions that include (a) a glycine betaine ester, (b) an acidifying agent, (c) polysaccharide thickener, and (d) water, are provided. Commonly, the glycine betaine ester may include one or more compounds of formula (I): Me3N+—CH2—C(O)—O—R X? wherein R is an aliphatic group having 8 to 22 carbon atoms and X? represents an inorganic or organic anion. Commonly, the composition has a pH of no more than about 4, a viscosity of no more than about 1,500 cP at a shear rate of 10 at 25° C., and/or a viscosity of at least about 250 cP at a shear rate of 50 at 25° C. (where the viscosities are determined with a Brookfield Cone/Plate viscometer). The cleaning composition may exhibit a unique sheer thinning profile, such that the composition thins less after being sprayed onto a surface and thereby providing a longer contact time than conventional cleaning products.

Abstract: A composition for washing a pickled steel plate and a method for washing a pickled steel plate using the same are provided. The composition for washing a pickled steel plate includes a phosphoric acid ester compound, an amine-based compound, sodium carbonate, ammonium acetate, ethylene diamine tetraacetic acid (EDTA) and a remainder of water, and the method for washing a pickled steel plate is performed using the same.

Abstract: A surface treatment method of a material, comprising: respectively immersing a material to be treated into a first inorganic acid solution and a fluoride acidic solution to perform surface etching, so that nano-sized holes are formed in the surface of the material to be treated. Further disclosed are a material product and a composite material.

Abstract: This ferritic stainless steel includes: in terms of % by mass, C: 0.001% to 0.100%; Si: 0.01% to 5.00%; Mn: 0.01% to 2.00%; P: 0.050% or less; S: 0.0100% or less; Cr: 9.0% to 25.0%; Ti: 0.001% to 1.00%; Al: 0.001% to 5.000%; and N: 0.001% to 0.050%, with a balance being Fe and impurities, wherein in a region from a steel surface to a depth of 5 nm, and not exceeding a thickness of a passive film, a total amount of Al and Si is 1.0 atomic % or more, an amount of Cr is 10.0 atomic % or more, and an amount of Fe is 85.0 atomic % or less, in terms of cation fraction.

Abstract: A neutron capture therapy system and a target for a particle beam generating device, which may improve the heat dissipation performance of the target, reduce blistering and extend the service life of the target. The neutron capture therapy system includes a neutron generating device and a beam shaping assembly. The neutron generating device includes an accelerator and a target, and a charged particle beam generated by acceleration of the accelerator interacts with the target to generate a neutron beam. The target includes an acting layer, a backing layer and a heat dissipating layer, the acting layer interacts with the charged particle beam to generate the neutron beam, the base layer supports the action layer, and the heat dissipating layer includes a tubular member composed of tubes arranged side by side.

Abstract: A method of repairing a superalloy component includes a series of sequential steps. The steps are, cleaning the component, applying brazing material to the component, heat treating the component, inspecting the component, preparing the surface of the component, welding the component, and performing a second inspection of the component. The superalloy component is comprised of a high gamma prime superalloy.

Abstract: Treating a sulfide scale includes contacting the sulfide scale with an oxidizing composition that includes a first oxidizer and a second oxidizer.

Abstract: Described herein are the methods of using a cationic alkyl polyglycoside in a corrosion control composition to reduce corrosion for metal surfaces in a water system. The described methods or compositions are found to be effective than those methods or compositions including commonly used corrosion inhibitors for water systems.

Abstract: Described herein are the methods of using a cationic alkyl polyglycoside in a fouling control composition to reduce microbial and/biofilm growth in a water system. The described methods or compositions are found to be effective than those methods or compositions including commonly used single quaternary compounds for reducing microbial or biofilm growth in water systems.

Abstract: A material removal method comprises receiving a component that includes a component body and a coating on the component body, the component body comprising metallic first material, and the coating comprising a second material that is different from the first material, wherein the component is a component of an item of rotational equipment. The method also includes receiving a solution comprising nitric acid and hydrogen peroxide and subjecting at least a portion of the coating to the solution in supercritical condition in order to remove at least some of the second material from the component, wherein a chemistry of the solution is selected such that the solution is substantially non-reactive with the first material.

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

Abstract: The present invention generally relates to a removal composition and process, particularly useful for cleaning ceria particles and CMP contaminants from microelectronic devices having said particles and CMP contaminants thereon, in particular microelectronic devices having PETEOS, Silicon Nitride, and Poly-Si substrates. In one aspect, the invention provides treatment of the microelectronic substrate having ceria particles thereon utilizing complexing agents free of Sulfur and Phosphorous atoms.

Abstract: A composition for destroying microorganisms is used for destroying microflora (bacteria, protozoan fungi, etc.) in a sessile state (hereinafter, a biofilm). The composition can find its application in medicine, industry, agriculture and various technical fields for destroying biological films comprised of complex bacterial communities in an extracellular polymeric substance (an exopolymeric matrix), which form on different types of surfaces: biological, industrial, etc. The composition is pre-prepared by dissolving an oxidant and a buffer compound in a solvent. Once the composition has been prepared, it is applied to a biofilm on the surface of an object.

Abstract: The present invention generally relates to methods of cleaning residual pesticide from an agricultural vessel, and to kits and compositions useful for the practice of such methods.

Abstract: A method of treating in a subterranean formation including placing a corrosion inhibitor composition into a subterranean formation, where the formation includes an acidic environment having a pH of about 5 or below, where the composition includes: an organic solvent comprising an alcohol with a flash point of at least about 75° C.; a nitrogen containing compound; an aqueous acid solution comprising HCl; and contacting a metal surface with the corrosion inhibitor composition. A corrosion inhibitor composition includes an organic solvent comprising an alcohol with a flash point of at least about 75° C.; a nitrogen containing compound; and an aqueous acid solution comprising HCl.

Abstract: According to the present invention, there is provided a cleaning agent composition for a semiconductor device substrate including at least one of wiring and an electrode in which the wiring and the electrode contain cobalt or a cobalt alloy, the cleaning agent composition including a component (A): at least one compound selected from the group consisting of specific compounds; and a component (B): water.

Abstract: An organic photoresist stripping composition and method of using the composition with silicon wafers having an insulating layer and metallization on the wafers, having an aryl sulfonic acid or alkylaryl sulfonic acid or mixtures thereof; 1,3-dihydroxybenzene (resorcinol) or sorbitol or mixtures thereof; one or more hydrocarbon solvents having a flash point of greater than about 65° C., and optionally less than about 0.5% by weight water based on the total weight of the composition. The composition may also be used for the removal of other materials from other substrates.

Abstract: A composition for washing a pickled steel plate and a method for washing a pickled steel plate using the same are provided. The composition for washing a pickled steel plate includes a phosphoric acid ester compound, an amine-based compound, sodium carbonate, ammonium acetate, ethylene diamine tetraacetic acid (EDTA) and a remainder of water, and the method for washing a pickled steel plate is performed using the same.

Abstract: A nozzle is stored in a nozzle storage hole of a waiting pod. In this state, a cleaning liquid is discharged to an outer peripheral surface of the nozzle from a plurality of discharge ports. Thus, a coating liquid and its solidified matter adhering to the nozzle are dissolved and removed from the nozzle. Subsequently, a metal removal liquid is discharged from a plurality of discharge ports to the outer peripheral surface of the nozzle. Thus, a metallic component remaining on the nozzle is dissolved and removed from the nozzle. Further, pure water is discharged to the outer peripheral surface of the nozzle from the plurality of discharge ports, and the metal removal liquid adhering to the nozzle is cleaned away.

Abstract: A method for treating a substrate includes a substrate treating step of treating the substrate by dispensing a treating liquid onto the substrate while rotating the substrate supported on a support plate in a processing space of a processing vessel and a vessel cleaning step of cleaning the processing vessel by dispensing a cleaning solution onto a jig while rotating the jig supported on the support plate. In the substrate treating step, the substrate is clamped to the support plate by a first vacuum pressure applied to the substrate. The vessel cleaning step includes a first clamping step of clamping the jig to the support plate by applying a second vacuum pressure to the jig. The first vacuum pressure and the second vacuum pressure are different from each other.

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

Abstract: A method for removing silicon oxide from a wafer and an integrated circuit manufacturing process are provided. The method includes: introducing a dehydrated hydrogen fluoride gas and a dehydrated alcohol gas into a process chamber; mixing the dehydrated hydrogen fluoride gas with the dehydrated alcohol gas to generate gaseous etchants; allowing reactions between the etchants and the wafer in the process chamber under a high pressure maintained in the process chamber to improve an etching selectivity; and pumping out reaction products from the process chamber.

Abstract: Provide are methods and systems for inhibiting corrosion of a metal surface. An example method comprises providing a treatment fluid comprising an aqueous carrier fluid and a polyhydroxyetheramine corrosion inhibitor; contacting the metal surface with the treatment fluid; and contacting the metal surface with a mineral acid. Another example method comprises providing a treatment fluid comprising an aqueous carrier fluid, a non-polyhydroxyetheramine corrosion inhibitor, and a polyhydroxyetheramine corrosion inhibitor intensifier; contacting the metal surface with the treatment fluid; and contacting the metal surface with an organic acid. An example system comprises a treatment fluid comprising a polyhydroxyetheramine, an acid, and an aqueous carrier fluid; mixing equipment capable of containing the treatment fluid; pumping equipment capable of pumping the treatment fluid into a wellbore; and the metal surface.

Abstract: An automotive engine coolant composition includes: a non-silicone surfactant; an anti-foaming agent containing a mineral oil and silica; and a base, in which the base includes at least one alcohol selected from the group consisting of a monohydric alcohol, a dihydric alcohol, a trihydric alcohol, and a glycol monoalkyl ether and/or water, a kinematic viscosity is 8.5 mm2/s or more at 25° C. and 2.0 mm2/s or less at 100° C., and with respect to 100 parts by mass of the coolant composition, a content of the mineral oil is 0.01 to 0.4 parts by mass and a content of the silica is 0.003 to 0.1 parts by mass.

Abstract: An improved isomerization process in which the inlet temperature to the isomerization reaction zone is less than 105° C. is described. A separate reactor is provided for the decomposition of the organic chloride. The product of the decomposition of the organic chloride is sent to an isomerization reactor along with a hydrocarbon feed containing paraffins. The use of the organic chloride decomposition reactor allows the operating temperatures for the isomerization reaction zone to be reduced.

Abstract: A method of manufacturing an aluminum alloy ingot using scrap aluminum alloy in the 2xxx or 7xxx series, and a fabrication method after rolling, extrusion and/or forging of an aeronautical structure comprising the steps in the above method, and then at least one rolling, extrusion and/or forging step of the aluminum alloy ingot in the series of scrap used.

Abstract: A system includes a chamber, an inlet valve, and a control device. The chamber is configured to perform a semiconductor process. The inlet valve is coupled to the chamber and a facility water source. The control device is coupled to the inlet valve, and configured to at least partially close the inlet valve when the chamber is idle.

Abstract: The invention provides a process for recovering oxalic acid used in ferrous metal pickling procedures, thereby reducing the total cost and environmental load of the pickling treatments.

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

Abstract: The invention provides a measuring system, which comprises a plurality of measuring units and a leveling unit common to the plurality of measuring units, the leveling unit has a recessed fitting portion on an upper surface, and the plurality of measuring units each has a projecting fitting portion which is engageable and disengageable with respect to the recessed fitting portion, wherein the plurality of measuring units are constituted to be attachable and detachable with respect to the leveling unit, and in a state where each of the measuring units is mounted on the leveling unit, a same object to be measured is measured respectively, an offset amount between each of the measuring units is measured, and based on the offset amount, a measurement value measured in each of the measuring units is corrected and coordinate-converted.

Abstract: Various embodiments of systems and methods for drain line monitoring are disclosed herein. More specifically, a liquid dispense unit for a coating/developing processing system is provided herein for applying one or more liquid solutions to a substrate disposed within the liquid dispense unit. In the disclosed embodiments, a pH sensor and/or a line particle counter (LPC) is coupled to a drain line of the liquid dispense unit to monitor various parameters of the liquid waste, which is ejected from the substrate and disposed of through the drain line. In some embodiments, measurements obtained from the pH sensor may be used to optimize a develop process by detecting an endpoint of the develop process, avoiding pH shock and/or detecting excursions in the develop process. In some embodiments, measurements obtained from the LPC may additionally or alternatively be used to optimize the develop process.

Abstract: A discharge port 31 is arranged inside a chamber 9. A circulation flow passage 50 circulates a processing liquid, while maintaining the processing liquid at a predetermined temperature. A discharge flow passage 32 is branched from a circulation flow passage 50 to guide the processing liquid to the discharge port 31. A return flow passage 33 is connected to the discharge flow passage 32 inside the chamber 9 and allows the processing liquid running through the discharge flowpassage 32 to flow back to the circulation flow passage 50.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate by means of a substrate holder which holds the substrate horizontally with an interval upward from an upper surface of a base, a first processing liquid supplying step of supplying a first processing liquid to an upper surface of the substrate held by the substrate holder, a cleaning liquid supplying step of supplying a cleaning liquid so as to wash away the first processing liquid attached to the upper surface of the base, to the upper surface of the base such that the cleaning liquid on the base does not contact a lower surface of the substrate held by the substrate holder, and a removing step of removing the cleaning liquid from the upper surface of the base.

Abstract: Methods, systems and apparatuses are disclosed for treating aluminum desmutting solutions by reacting, mixing and filtering an aluminum desmutting solution flow from an aluminum desmutting solution tank and controlling the amount of copper ions in an aluminum desmutting solution tank by directing a portion of the desmutting solution from a desmutting solution tank to a treatment line, reacting a portion of the desmutting solution in the treatment line and recirculating a filtered aluminum desmutting solution to the aluminum desmutting solution tank during active desmutting operation of the aluminum desmutting solution tank.

Abstract: A pickling apparatus includes a plurality of pickling tanks in which a scale of a steel plate is removed while the steel plate is advanced and sequentially dipped; an intermediate spraying unit, disposed between a pickling tank at the front end and a pickling tank at the rear end, for spraying a pickling solution onto the steel plate; and a pickling solution supply means configured to provide a pickling solution of a concentration used in the pickling tank at the rear end to the intermediate spraying unit, wherein a wringer roll disposed between the plurality of pickling tanks is removed.

Abstract: This disclosure relates to a Room Temperature Wet Chemical Growth (RTWCG) method and process of SiOX thin film coatings which can be grown on various substrates. The invention further relates to RTWCG method and process suited to grow thin films on the Si substrates used in the manufacture of silicon-based electronic and photonic (optoelectronic) device applications. The invention further relates to processes used to produce SiOX thin film layers for use as passivation layers, low reflectance layers, or high reflectance single layer coatings (SLARC) and selective emitters (SE).

Abstract: The present invention is a charge complexing chemical composition that protects metal during polymer removal. The polymer coatings include crosslinked systems by chemical-amplification and photoacid generated (PAG) means as in epoxies. The system includes a solvent, a charge complexing additive, and an acid that creates a protective complex for sensitive metals during the dissolving and rinsing practice needed for processing microelectronic parts. The composition can be utilized with a method for removing partial and fully cured crosslinked coatings that originate from chemical amplification or PAG-epoxy photoimageable coatings.

Abstract: A method of treating in a subterranean formation including placing a corrosion inhibitor composition into a subterranean formation, where the formation includes an acidic environment having a pH of about 5 or below, where the composition includes: an organic solvent comprising an alcohol with a flash point of at least about 75° C.; a nitrogen containing compound; an aqueous acid solution comprising HCl; and contacting a metal surface with the corrosion inhibitor composition. A corrosion inhibitor composition includes an organic solvent comprising an alcohol with a flash point of at least about 75° C.; a nitrogen containing compound; and an aqueous acid solution comprising HCl.

Abstract: A manufacturing method of a mold includes the steps of: providing an aluminum base in the shape of a hollow cylinder which is made of a Al—Mg—Si based aluminum alloy, the aluminum base being mechanically mirror-finished; performing a frosting treatment on a surface of the aluminum base with an aqueous solution which contains a salt of hydrogen fluoride and ammonium; thereafter, forming an inorganic material layer on the surface of the aluminum base and forming an aluminum film on the inorganic material layer, thereby forming a mold base; and alternately repeating anodization and etching on a surface of the aluminum film of the mold base, thereby forming an inverted moth-eye structure which has a plurality of micro recessed portions.

Abstract: A method of forming openings in a polymer layer includes positioning a layer of a material over a cavity such that a portion of the first material lies over a cavity, ablating the portion of the material at a first shape, and ablating the portion of the material at a second shape, wherein the second shape lies within the first shape. A method of forming openings in a polymer layer includes positioning a layer of a first material over a second material having a cavity such that a portion of the first material lies over the cavity, ablating the portion of the first material over the cavity at a first shape, and ablating the portion of the second material over the cavity at a second shape, wherein the second shape lies within the first shape.

Abstract: Described is a post-CMP cleaning solution and methods useful to remove residue from a CMP substrate or to prevent formation of residue on a surface of a CMP substrate.

Abstract: A method for recovering tin and/or tin alloy from a substrate comprising providing a substrate having tin and/or tin alloy thereon; contacting the tin and/or tin alloy with a stripping solution comprising an inorganic acid and a persulfate compound; recovering tin salt and/or tin alloy salt precipitated from the stripping solution; and recovering tin and/or tin alloy from the tin salt and/or tin alloy salt, respectively.