Abstract: A method of polishing a semiconductor wafer includes polishing a surface of the semiconductor wafer using a polishing pad while supplying a polishing agent slurry containing abrasives during a first step. The polishing pad is free of abrasives and includes a first surface that contacts the semiconductor wafer, the first surface having a surface structure including elevations. Supply of polishing agent slurry is subsequently ended and, in a second step, the surface of the semiconductor wafer is polished using the polishing pad while supplying a polishing agent solution having a pH value of at least 12 that is free of solids.

Abstract: Disclosed are methods for developing authorized chemical palettes for formulating products with reduced adverse environmental and/or health concerns, and advising the public to a greater extent regarding the ingredients of products formulated using these palettes. Also disclosed are computer systems to implement such methods.

Abstract: A method for cleaning a semiconductor wafer by using a chemical tank containing an SC-2 solution including, a plurality of the chemical tanks are used, and among SC-2 solutions contained in the plurality of chemical tanks, an HCl concentration in an SC-2 solution contained in a chemical tank to be finally used is lowered to the lowest to clean the semiconductor wafer. The method for cleaning a semiconductor wafer thus provided can improve the particle level in SC-2 cleaning for a semiconductor wafer without degrading the metal impurity level on the semiconductor wafer surface.

Abstract: A method for inspecting a rotary machine having a fluid flow path includes a step of connecting an observation device to a connection port having an open/close valve that opens/closes a communication hole that communicates with the outside of the rotary machine and the flow path, the main body being connected to the connection port where the open/close valve is closed; a step of opening the open/close valve and inserting an insertion rod protruding from the main body of the observation device into the communication hole; a step of observing the inside of the flow path by an observation optical system provided at a leading end portion of the insertion rod; a step of withdrawing the insertion rod from the communication hole and closing the open/close valve; and a step of detaching the main body of the observation device from the connection port.

Abstract: There is provided a cleaning method of a film forming apparatus in which a process of forming a silicon film, a germanium film or a silicon germanium film on a substrate mounted on a substrate holder in a processing container is performed, comprising: etching away the silicon film, the germanium film or the silicon germanium film adhered to an interior of the processing container including the substrate holder by supplying a halogen-containing gas not containing fluorine into the processing container in a state where the substrate holder, which was stored in a dew point-controlled atmosphere after the film forming process, is accommodated in the processing container with no substrate being mounted thereon.

Abstract: Described herein are various antimicrobial glass articles that have improved resistance to discoloration when exposed to harsh conditions. The improved antimicrobial glass articles described herein generally include a glass substrate that has a low concentration of nonbridging oxygen atoms, a compressive stress layer and an antimicrobial silver-containing region that each extend inward from a surface of the glass substrate to a specific depth, such that the glass article experiences little-to-no discoloration when exposed to harsh conditions. Methods of making and using the glass articles are also described.

Abstract: A lubricant for firearms includes a base and nanoparticles dispersed throughout the base. The base may include a hydrocarbon or a mixture of hydrocarbons. The base may be in a liquid form or in a semisolid form. Fat from an animal source, such as porcine fat or, more specifically, bacon fat, may be employed as a hydrocarbon of the base. Fat from an animal source may be rendered or otherwise clarified. The nanoparticles may include nanospheres, which may have an average diameter of about 100 nm or less. The lubricant may also include a hydrocarbon from a vegetable source (e.g., a vegetable oil, etc.), a hydrocarbon from a petrochemical source, and/or a synthetic petrochemical lubricant. The lubricant may include a fragrance to impart it with a desired scent (e.g., a bacon scent, etc.). Methods for lubricating and cleaning metallic surfaces of firearms are also disclosed. In such a method, nanoparticles from a lubricant may be introduced into and retained within microscopic crevices in the metallic surfaces.

Abstract: A method is for cleaning a substrate transfer mechanism for loading a substrate into a heat treatment chamber for sublimating by-products by heat. The substrate transfer mechanism includes a holding unit for holding the substrate. The method includes repeatedly moving the holding unit into and out of the heat treatment chamber.

Abstract: The cleaning apparatus includes multiple kinds of cleaning modules each configured to perform a cleaning processing of a substrate, a first accommodating section configured to accommodate the multiple kinds of cleaning modules therein, and a fluid supply section configured to supply a fluid to the cleaning modules accommodated in the first accommodating section through a pipe. Each of the multiple kinds of cleaning modules includes a pipe connection portion having a common connection position to be connected with the pipe.

Abstract: Disclosed is a supercritical-state cleaning system, comprising a cleaning chamber (4), a gas booster apparatus (11), a first heating apparatus (5), and a carbon dioxide supply apparatus. The cleaning chamber (4) is separately connected to the first heating apparatus (5) and the carbon dioxide supply apparatus. A vacuum pump set (1) is connected to the cleaning chamber (4). Compared with the prior art, in the Invention, air introduced when a workpiece enters a cleaning chamber is completely removed, so as to prevent mixing of CO2 and air, thereby improving a cleaning effect.

Abstract: A substrate-treating apparatus includes a liquid-providing part, a first liquid-removing knife and a returning part. The liquid-providing part provides a first liquid chemical for cleaning a substrate that includes a metal pattern and a photoresist pattern on the metal pattern, and for removing an etchant that remains on the substrate. The first liquid-removing knife sprays a second liquid chemical in a direction inclined and opposite to a returning direction of the substrate, so as to remove the first liquid chemical, the first liquid chemical including a metal precipitate. The returning part returns the substrate from the liquid-providing part toward the first liquid-removing knife in the returning direction.

Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.

Abstract: Treating a sulfide scale includes contacting the sulfide scale with an oxidizing composition that includes a first oxidizer and a second oxidizer.

Abstract: Methods and compositions for improving laundry quality in multiple areas including detergency, bleaching and wastewater operations are provided by a laundry additive composition. The laundry additive composition and methods of using the composition control iron and other transition metals in water utilized within laundry applications.

Abstract: Provided in this disclosure, in part, are methods, compositions, and systems for degrading organic matter, such as kerogen, in a subterranean formation. Further, these methods, compositions, and systems allow for increased hydraulic fracturing efficiencies in subterranean formations, such as unconventional rock reservoirs. Also provided in this disclosure is a method of treating kerogen in a subterranean formation including placing in the subterranean formation a composition that includes a first oxidizer including a persulfate and a second oxidizer including a bromate.

Abstract: In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H2 gas.

Abstract: A desmear treatment method for a wiring board material is provide that is capable of performing desmear treating on the interior of a through hole formed in an insulating layer without requiring complicated steps and obtaining an insulating layer having appropriate surface roughness. The desmear treatment method comprises forming a hole passing through an insulating layer, wherein the insulating layer is made of a resin containing a filler, and desmear treating the wiring board material with radicals. The wiring board material includes a depletable resist layer formed on the insulating layer, and the depletable resist layer is made of a resin to be depleted in the desmear treatment step. A method of manufacturing a wiring board material to be subjected to the desmear treatment method and a composite insulating layer forming material used in the manufacturing method are also disclosed.

Abstract: The invention is a method of stripping one or more additional coats covering a barrier primer coat that covers a surface. The barrier coat contains a catalyst, such as manganese dioxide and, or, manganese carbonate, for the decomposition of hydrogen peroxide. The top coat of the covered surface is contacted with the stripping agent at decomposition reaction conditions.

Abstract: In a substrate processing apparatus, gas is supplied from above a shield plate to a lid internal space within a chamber so that pressure in the lid internal space becomes higher than pressure in a chamber-body internal space and the gas in the lid internal space is sent to the chamber-body internal space. The gas flowing from the lid internal space is discharged through a body discharge port provided below a substrate in the chamber-body internal space. This forms a generally cylindrical current of gas in the chamber. The supply of processing liquids to an upper surface of the substrate is conducted on the inner side of the generally cylindrical current. This suppresses mists and fumes of processing liquids passing through the generally cylindrical current and entering into the lid internal space from the gap between the shield plate and the lid bottom part.

Abstract: Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Abstract: Removing inorganic scale and other acid-soluble materials in the presence of a particulate pack can sometimes result in unwanted alterations to the particulate pack. Methods for removing inorganic scale can comprise: introducing a descaling agent comprising an N-(phosphonoalkyl)iminodiacetic acid or any salt thereof into a wellbore in fluid communication with a particulate pack, an inorganic scale being present in the wellbore or in the particulate pack; contacting the descaling agent with the particulate pack and the inorganic scale; and removing at least a portion of the inorganic scale using the N-(phosphonoalkyl)iminodiacetic acid or any salt thereof without substantially affecting the particulate pack.

Abstract: The present invention relates to methods for forming a layered composite material, the finished product comprising at least one geopolymeric layer and at least one cement-based layer. The method of the invention allows the provision of products with more varied appearances, shapes, colours, gloss, or surface structures such as decorations, reliefs, roughness, or the like. Products obtained according to the method of the invention also form part of the invention.

Abstract: A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

Abstract: The present disclosure provides fibrous composition comprising a soluble or a dispersible N-halamine, for example 1-chloro-2,2,5,5-tetramethyl-4-imidazolidinone (i.e., compound I). Additionally, the disclosure provides methods for producing the fibrous compositions comprising a soluble or a dispersible N-halamine as well as methods for protecting a person from an infection using the fibrous compositions comprising a soluble or a dispersible N-halamine. The compositions and methods according to the present disclosure provide several advantages, such as stability, less time to provide sufficient antimicrobial inactivation, and are inexpensive and require lower amount of active concentrations to be effective.

Abstract: A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber softens an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical. The first spray chamber removes the outer region of the flux residue when the wafer is impinged upon by a first chemical spray in order to expose an inner region of the flux residue. The second immersion chamber softens the inner region of the flux residue when the wafer is immersed in a second chemical. The second spray chamber removes the inner region of the flux residue when the wafer is impinged upon by a second chemical spray in order to clean the wafer to a predetermined standard. The drying chamber dries the wafer.

Abstract: Apparatus, systems and methods for improving strength of a thin glass member for an electronic device are disclosed. In one embodiment, the glass member can be strengthened chemically using a monitored ion exchange process in which the glass member is disposed in a glass ion exchange bath. In one embodiment, the glass member can pertain to a cover glass for housings of electronic devices.

Abstract: A semiconductor device includes a base including a substrate and a first insulating layer formed thereon. The base has a first surface and a second surface that is opposite to the first surface, and has an opening that passes through from the first surface to the second surface. A first width of the opening at the first surface is greater than a second width of the opening at the second surface. An electrode formed on the second surface of the base and covers the opening. A metal layer fills the opening and is electrically connected to the electrode.

Abstract: Stripping a metallic bond coat from an article using a wet chemical process. An article removed from service and having a metallic bond coat applied over a surface of its metallic substrate is provided. The metallic bond coat is used to improve the adhesion of a TBC to the article, so grit blasting to first remove any TBC applied over the bond coat and which still remains on the article initially may be required. The bond coated article is then immersed in an acid solution of HCl/H3PO4 at a predetermined temperature for a predetermined amount of time, the HCl/H3PO4 solution reacting with the bond coat applied over the metallic substrate to form a smut on the surface. The article is then removed from the HCl/H3PO4 solution and quickly immersed in a solution of NaOH for a predetermined amount of time to at least partially desmut the surface.

Abstract: A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.

Abstract: A cellulose composite which contains a cellulose and a polysaccharide and which is characterized in that the median diameter of colloidal cellulose composites contained in the cellulose composite is 0.85 ?m or more as measured by a dynamic light scattering method.

Abstract: According to the invention there is provided a method of dry gas phase chemically etching a structure comprising the steps of: positioning the structure in an etch chamber, the structure comprising a first material and a second material, wherein the first material is selected from silicon, molybdenum, germanium, SiGe and tungsten, the second material is silicon dioxide or silicon nitride, and at least one surface of the first material is exposed so as to be contactable by a gas phase chemical etchant; etching the first material with a noble gas fluoride or halogen fluoride gas phase chemical etchant; and exposing the etch chamber to water vapour so that the step of etching the first material is performed in the presence of water vapour.

Abstract: A method is disclosed for maintaining a hard surface, the method comprising treating the surface with a flexible pad (1), in the presence of abrasive particles, bonded to the pad, on a contact surface between the pad (1) and the hard surface. The abrasive particles comprise diamond particles, and the treating is performed in the absence of an effective amount of crystallization agent on the contact surface. A tool for use in the method is also provided, as well as a floor surfacing machine comprising such a tool and a method for manufacturing such a tool.

Abstract: Provided are methods and systems for cleaning various semiconductor substrate storage articles, in particular, FOUP doors. The FOUP doors and other similar articles often have openings that may get contaminated with cleaning liquids if not covered. The described cleaning system includes contact points for engaging the article and covering these openings. The contact points may be also used for supporting the article and for pressurizing the openings in the article with a gas. The gas may be supplied through one or more contact points. It prevents liquids from getting into the openings if even the openings are not completely sealed. The pressurization may be maintained through the entire wet portion of the cleaning process. The article may be rotated within the cleaning system while cleaning and/or other liquids or gases are dispensed through a set of spraying nozzles. Spraying nozzles may move to enhance cleaning of the article.

Abstract: Home care formulation comprising a formulation of a sulfonic acid derivative and a carboxylic acid.

Abstract: Ambient moisture-activatable surface treatment powders containing persalt, positively charged phase transfer agent and alkaline pH buffering may be activatable without the addition of liquid. Some ambient moisture-activatable surface treatment powders are substantially free of bleach activators and/or chlorine. Methods of use of ambient moisture activatable powders include applying them to the surfaces to be treated.

Abstract: A method of producing a brush for the cleaning of electronic components. In this method, a plastic core is prepared and submerged into a solvent to melt the outer surface of the core. While the outer surface of the plastic core is still partially melted, it is rolled through a trough of powdered polyvinyl alcohol (PVA) such that granules of PVA melt into and subsequently become embedded at the outer surface. As the solvent evaporates, the outer surface of the core re-hardens and the granules of PVA become firmly entrapped at the outer surface. The PVA covered shaft is placed in a mold, which is then filled with a PVA solution. As the solution cures, it forms a strong bond with the PVA granules that are embedded at the surface of the plastic core. Thereafter, the mold components are disassembled, leaving behind the finished cored brush.

Abstract: There is provided a method for processing an inner wall surface of a micro vacancy, capable of reliably etching or cleaning even if the hole provided to the substrate to be processed is narrow and deep. The substrate has a surface and a micro vacancy with an opening on the surface. An aspect ratio of the micro vacancy being at least 5, or the aspect ratio being less than 5 and a ratio of a micro vacancy volume to a surface area of the opening being at least 3. The micro vacancy is exposed to an atmosphere for forming a silicon oxide film so as to form a silicon oxide film on the inner wall surface of the micro vacancy. Subsequently a processing solution with a wettability with respect to silicon oxide is introduced into the micro vacancy so as to perform processing of the inner wall surface.

Abstract: The instant invention relates to the use of a compound selected from C2-C30 alkyl phosphonic acids, salts thereof, esters thereof, and mixtures thereof, to inhibit corrosion of a metal component by an aqueous fluid containing dissolved gases in an industrial hydrocarbon system.

Abstract: A method is provided which includes dispensing and removing different deposition solutions during an electroless deposition process to form different sub-films of a composite layer. Another method includes forming a film by an electroless deposition process and subsequently annealing the microelectronic topography to induce diffusion of an element within the film. Yet another method includes reiterating different mechanisms of deposition growth, namely interfacial electroless reduction and chemical adsorption, from a single deposition solution to form different sub-films of a composite layer. A microelectronic topography resulting from one or more of the methods includes a film formed in contact with a structure having a bulk concentration of a first element. The film has periodic successions of regions each comprising a region with a concentration of a second element greater than a set amount and a region with a concentration of the second element less than the set amount.

Abstract: A developing method for forming a resist film having a high uniformity of CD distribution. After exposure of a resist film on a substrate surface to form a resist pattern, the method includes sequential steps of: (A) supplying a developer to the rotating substrate; (B) reacting the resist film with the developer; and (C) removing the developer from the surface of the resist film to terminate the reaction of the resist film with the developer. In step (A), a liquid-contact nozzle, having an ejection orifice for the developer and a lower surface extending laterally from the ejection orifice and disposed opposite the resist film, is used. In step (C), the boundary between a reaction-terminated area of the surface of the resist film, and an in-progress reaction area of the surface of the resist film, is moved from the center toward the periphery of the resist film.

Abstract: A cleaning composition includes (A) at least one compound selected from the group consisting of a fatty acid that includes a hydrocarbon group having 8 to 20 carbon atoms, a phosphonic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, a sulfuric acid ester that includes a hydrocarbon group having 3 to 20 carbon atoms, an alkenylsuccinic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, and salts thereof, (B) an organic acid, (C) a water-soluble amine, (D) a water-soluble polymer, and an aqueous medium, the cleaning composition having a pH of 9 or more.

Abstract: A rinsing liquid adheres to a substrate subjected to a cleaning process. The rinsing liquid on the substrate is first replaced with IPA liquid. While the substrate covered with the IPA liquid is held in a dryer chamber, liquid carbon dioxide is supplied to the surface of the substrate. Liquid nitrogen is supplied to cool down the interior of the dryer chamber. This solidifies the liquid carbon dioxide on the substrate into solid carbon dioxide. Thereafter, the pressure in the dryer chamber is returned to atmospheric pressure, and gaseous nitrogen is supplied into the dryer chamber. Thus, the temperature in the dryer chamber increases. The solid carbon dioxide on the surface of the substrate is sublimated, and is hence removed from the substrate. All of the steps are performed while carbon dioxide is not in a supercritical state but in a non-supercritical state.

Abstract: A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.

Abstract: A composition is provided for the treatment of scaling and deposits due to naturally occurring radioactive material, said composition comprising one or more extractants that preferentially attract radioactive isotopes over other forms of alkaline earth cations A composition is further provided wherein said composition forms a polydentate ligand with one or more metals to act as carriers for radioactive elements. The composition comprises components that enhance stabilization of coordination complexation of the radioactive isotopes in the formation of polydentate ligands.

Abstract: A substrate cleaning method for removing particles adhered to a substrate includes: acquiring particle information including diameters of the particles adhered to the substrate; controlling, based on the acquired particle information, a factor related to sizes of gas clusters having aggregates of atoms or molecules of a cleaning gas; ejecting the cleaning gas, at a higher pressure than a processing atmosphere where the substrate is provided, to the processing atmosphere and generating the gas clusters by adiabatic expansion; and removing the particles by irradiating the gas clusters in a perpendicular direction to a surface of the substrate. As a result, even if recesses for a circuit pattern are formed on the surface of the substrate, the particles in the recesses can be removed at a high removal rate.

Abstract: An aqueous composition is described herein that is safe, convenient, and effective for cleansing dental appliances. The primary cleansing agent in this composition is a surfactant, which allows for fast and effective cleaning without damaging or discoloring the plastic of the dental appliance. The stable aqueous composition does not require dissolving in a reservoir and may be applied directly to the dental appliance. The aqueous composition is safe for natural teeth and therefore easy to incorporate into a regular oral hygiene routine.

Abstract: Disclosed are a substrate liquid processing apparatus and method for performing a liquid processing on a substrate using a processing liquid, and a computer-readable recording medium with a substrate liquid processing program recorded therein. In the method, a first chemical liquid supply step is performed to supply a first chemical liquid from a first chemical liquid supply unit to a processing liquid storage unit, a first chemical liquid purifying step is performed to purify the first chemical liquid in a chemical liquid purifying unit, a second chemical liquid supply step is performed to supply a second chemical liquid from a second chemical liquid supply unit to the processing liquid storage unit, and a processing liquid supply step is performed to supply the processing liquid obtained by mixing the first and second chemical liquids from the processing liquid supply unit to substrate liquid processing units.

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.

Abstract: Deposits such as particles deposited on a surface of a target object can be easily removed while suppressing damage to the target object such as destruction of pattern formed on the surface of the target object or film roughness on the surface of the target object. In a pre-treatment, vapor of a hydrogen fluoride is supplied to a wafer W to dissolve a natural oxide film 11, so that a deposit 10 attached to a surface of the natural oxide film 11 is slightly separated from a surface of the wafer W. A carbon dioxide gas that does not react with an underlying film 12 is supplied to a processing gas atmosphere where the wafer W is placed, so that a gas cluster of the carbon dioxide gas is generated. Then, the gas cluster in a non-ionized state is irradiated toward the wafer W to remove the deposit 10.

Abstract: An approach to provide an electronic assembly process that includes receiving at least one electronic assembly after a solder reflow process using a Sn-containing solder and a water-soluble flux. The approach includes baking the at least one electronic assembly in an oxygen containing environment and, then cleaning the at least one electronic assembly in an aqueous cleaning process.