Abstract: A process for removing and/or dry etching noble metal-based material structures, e.g., iridium for electrode formation for a microelectronic device. Etch species are provided by plasma formation involving energization of one or more halogenated organic and/or inorganic substance, and the etchant medium including such etch species and oxidizing gas is contacted with the noble metal-based material under etching conditions. The plasma formation and the contacting of the plasma with the noble metal-based material can be carried out in a downstream microwave processing system to provide processing suitable for high-rate fabrication of microelectronic devices and precursor structures in which the noble metal forms an electrode, or other conductive element or feature of the product article.

Abstract: An apparatus and process are described delivering alternating pulses of fluid and air within either a fully sealed or partially sealed tooling enclave in the direct presence of a constant or variable vacuum source for the purpose of removing loose as well as attached contamination from the part and it's associated internal passageways, as well as internal and external surface areas. The agitation of the debris is created by the displacement of the air or other gases, held under compression by the fluids when released to the vacuum source surrounding, affixed, or presented to the part/area to be cleaned. The fluid/air medium is generated in an alternating method by the use of a rotating pulse generator. The generator receives a constant or alternately a variable rate flow of fluid to be used in the application as well as a constant or alternately variable rate flow of compressed air.

Abstract: A foreign matter removing apparatus for removing foreign matter from a surface of a substrate. The apparatus is provided with: a substrate rotating mechanism which holds and rotates the substrate; and a fluid mixture supplying mechanism which generates a fluid mixture by mixing a treatment liquid and a gas, and supplies the fluid mixture onto the surface of the substrate held by the substrate rotating mechanism. The treatment liquid may be deionized water or a resist removing liquid. Examples of the foreign matter to be removed include a resist film formed on the substrate and a residue remaining on the surface of the substrate after ashing of the resist film.

Abstract: A device is operably attached to a swimming pool cleaner for dislodging and permitting a steering of the swimming pool cleaner away from obstacles within a swimming pool. The device includes a coupling slidably attached to the swimming pool cleaner near its hose coupling. An upper, generally horizontally positioned, resilient elongate bumper has its opposing ends affixed to the coupling to form the upper bumper into an arcuate shape extending partially around a forward portion of the swimming pool cleaner. A second resilient, elongate vertical bumper has one end attached to the upper bumper and an opposing end attached a weight assembly of the pool cleaner at a location proximate the sealing flange. A roller is attached to the vertical bumper near the upper bumper for rotation thereabout when the swimming pool cleaner encounters an obstacle such as a step from which it is to be dislodged.

Abstract: A substrate is transferred from an environment at about vacuum into a load lock through a first door. The substrate is then sealed within the load lock. The pressure within the load lock is raised to a high pressure above vacuum. A second door coupling the load lock to a high-pressure processing chamber is then opened and the substrate moved from the load lock into the high-pressure chamber. The substrate is then sealed within the high-pressure chamber. High-pressure processing, such as high pressure cleaning or high pressure deposition, is then performed on the substrate within the high-pressure chamber. Subsequently, the second door is opened and the substrate transferred into the load lock. The substrate is then sealed within the load lock. The pressure within the load lock is lowered to about vacuum and the first door opened. The substrate is then removed from the load lock into the environment.

Abstract: The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

Abstract: A method of removing first molecules adsorbed on the surfaces of a chamber and/or at least one object found in the chamber is provided. Second, polar molecules that have a desorptive effect on the first molecules are introduced into the chamber. The second molecules comprise nitrogen and hydrogen, and especially NH3 molecules.

Abstract: This invention provides fluid-dispensing devices attachable to an air-intake system of an internal combustion engine for introducing an engine cleaner composition into the air intake system. The invention also provides methods of cleaning internal combustion engines using the fluid-dispensing devices.

Abstract: A decontamination system for victims of chemical, biological, radiological, or other harmful exposure. The system effectively isolates a contaminated patient during a gross washing process and provides the highest level of protection to unit operators that may be dressed in street clothes. The system comprises an isolation apparatus, a washing chamber, an output enclosure, a method of passing a non-ambulatory patient through the system and a waste collection system. The parts of the system may function together as a single, integral unit for mass decontamination at the site of exposure. Further, the system may be used for non-ambulatory and ambulatory humans and/or animals and possibly equipment and other objects.

Abstract: Embodiments of the present invention are directed toward cleaning semiconductor substrates by dividing a processing chamber into a high-pressure compartment and a low-pressure compartment using a baffle. The baffle may include a pattern of nozzles that provide a flow path between the high pressure compartment and the low pressure compartment and that maintain the two compartments at substantially different pressures. A ratable substrate support is positioned within the low pressure compartment, and an inlet port injects a cleaning mist and a carrier gas into the high pressure compartment. The pressure differential between the two compartments accelerates the droplets from the cleaning mist through the nozzles of the baffle into the low pressure compartment toward the substrate, where a portion of the cleaning mist impacts on the surface of the substrate to form a liquid film or to eject elements of the surface film on the wafer.

Abstract: The invention is directed to a mehtod of cleaning an object in a controlled environment processing chamber into which solvents, water and/or gases are introduced. The process includes first applying a negative gauge pressure to the chamber to non-condensable gases and then introducing a solvent, solvent mixture, water or gas in either a liquid or vapor state to remove soluble contaminants from the surface of an object being processed in the chamber. Further steps recover residual solvent or solution from the object and chamber. A secondary cleaning step directs a vapor state fluid at high velocity at a solid surface of the object to remove insoluble material left behind after the pretreatment step. A final series of steps recovers any loose impediments or residual liquid or vapor from the chamber and returns the chamber to atmospheric pressure for removal of the cleaned object.

Abstract: A method of cleaning process residues from the surface of a substrate processing chamber component having holes. In the method, the component is at least partially immersed into a cleaning solution having hydrafluoric acid and nitric acid, and a non-reactive gas is passed through the holes to prevent the cleaning solution from back-flowing into the holes during the cleaning process. The method is particularly useful for cleaning sputtering residue deposits from an electrostatic chuck used in a sputtering process.

Abstract: A heat sterilization process for small, washed, and bagged articles such as vial stoppers includes a conditioning or air removal phase prior to sterilization. During the air removal phase, a substantial majority of the liquid moisture is removed from the bagged articles by introducing brief periods of dry, warm air to the autoclave chamber. The air is introduced in short bursts at the point of greatest vacuum while pressure pulsing the chamber during the air removal phase. The air is heated and injected into the chamber through a supply valve which is rapidly opened and closed while the chamber is maintained within a preselected vacuum range between the pressure pulses. The result is a greatly reduced time for a complete sterilization and drying process.

Abstract: To dispose wine expectorant from a spit bucket, the interior of a portable pressurizable rigid tank is connected to a vacuum pump which draws a vacuum in the tank. The tank is disconnected from the pump and transported to the spit bucket. An inlet end of a suction conduit connected to the tank is inserted into the spit bucket. A passage from the inlet end to the tank interior is opened to cause the vacuum in the tank to draw-in the wine expectorant from the spit bucket. The tank is taken to a discharge station, and a drain of the tank is opened in order to discharge the tank contents.

Abstract: A semiconductor wafer processing apparatus (10) includes a front-end robot (28), a wafer scrubber/dryer (30), a moisture detector (34) and a load/lock chamber (38, 40). The front-end robot (28) moves a wafer to be processed between the wafer cassette (21-24), the wafer scrubber (30), the moisture detector (34) and the load/lock chamber (38, 40). Optionally, the load/lock chamber (38, 40) may include an additional moisture detector. The load/lock chamber (38, 40) functions as an interface to a vacuum processing chamber (50, 52, 54) for performing various deposition processing steps where introduction of moisture would be destructive to the wafer.

Abstract: Method for the cleaning of spinning devices with a plurality of spinning apertures for the output of molten plastic. With the spinning device in operation, individual dirt-contaminated and/or clogged spinning apertures are closed with plugs, these plugs consisting of at least in part of at least one oxidizable substance. The spinning device is subjected in the course of its cleaning to a pyrolysis treatment for the breakdown of residual plastic. The spinning device is subjected to an oxidative treatment, so that the oxidizable substance is oxidized.

Abstract: Activated gaseous species generated adjacent a carbon contaminated surface affords in-situ cleaning. A device for removing carbon contamination from a surface of the substrate includes (a) a housing defining a vacuum chamber in which the substrate is located; (b) a source of gaseous species; and (c) a source of electrons that are emitted to activate the gaseous species into activated gaseous species. The source of electrons preferably includes (i) a filament made of a material that generates thermionic electron emissions; (ii) a source of energy that is connected to the filament; and (iii) an electrode to which the emitted electrons are attracted. The device is particularly suited for photolithography systems with optic surfaces, e.g., mirrors, that are otherwise inaccessible unless the system is dismantled.

Abstract: A robot cleaner is described that cleans a room using a serpentine room clean and a serpentine localized clean. Sensors can include an object following sensor, a stairway detector and bumper sensors.

Abstract: A method and apparatus for reducing the sensitivity of semiconductor processing to chamber conditions is provided. Process repeatability of common processes are affected by changing surface conditions which alter the recombination rates of processing chemicals to the chamber surfaces. In one aspect of the invention, a composition of one or more etchants is selected to optimize the etch performance and reduce deposition on chamber surfaces. The one or more etchants are selected to minimize buildup on the chamber surfaces, thereby controlling the chamber surface condition to minimize changes in etch rates due to differing recombination rates of free radicals with different surface conditions and achieve etch repeatability. In another embodiment, the etchant chemistry is adjusted to reduce the change to internal surface conditions after a cleaning cycle. In another embodiment, a process recipe is selected to reduce the sensitivity of the etch process to the chamber conditions.

Abstract: A semiconductor water is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane. Subsequently, TEOS is supplied into the reaction tube, while the reaction tube is exhausted through the exhaust pipe. A silicon oxide film is deposited on the object by resolving the TEOS. A semiconductor wafer an which a laminated layer of the silicon nitride film and the silicon oxide film is formed is unloaded from the reaction tube. Then, reactive products attached into the exhaust pipe and the reaction tube are removed, by conducting fluoride hydrogen thereinto, thereby cleaning the pipers The top end of the exhaust pipe is split into two vents, either one of which is used for discharging exhaust gas for forming films and the other one of which is used for discharging HF gas for cleaning the pipes.

Abstract: A device and method for processing substrates, whereby medium consumption and processing time are reduced. According to the inventive method, liquid is conducted to a surface of the substrate that is to be treated via at least one nozzle that is arranged in a substantially centric position with respect to said substrate and via a plurality of second nozzles that are controlled separately from the first nozzle.

Abstract: A robot cleaning system uses a robot cleaner and a unit. The unit is connected to power the robot cleaner by a power cord. The robot cleaner can move around a room while being powered by the unit. In one embodiment, the unit is connected to a power socket by another power cord.

Abstract: A spray nozzle system is useful for applying imageable materials onto substrates. The system may be used for on-site fabrication of lithographic printing surfaces for use in printing. A wash nozzle and vacuum port are integrated with the spray nozzle for use in cleaning the printing residues from a used printing surface in preparation for a subsequent print job. The integrated nozzle assembly is useful in coating and cleaning operations, performed either on-press or off-press, and enables the reuse of a single printing substrate in a number of print jobs.

Abstract: A film deposition method includes the steps of preparing a first chamber, a second chamber, and a transport connector which connects the first chamber and the second chamber with each other, setting a pressure in the second chamber to be lower than a pressure in the first chamber, and introducing a plurality of kinds of particles into the second chamber using a differential pressure between the pressure in the first chamber and the pressure in the second chamber so that the particles collide with a substrate placed in the second chamber to form a film on the substrate. The plurality of kinds of particles include particles of a sublimable substance and particles of a material for forming the film on the substrate in the second chamber. Consequently, cleaning by the sublimable substance and film deposition by the material for forming the film are performed simultaneously.

Abstract: A cleaning method for cleaning a developer container includes a step of blowing air through an opening formed in the developer container at a first flow rate; a step of sucking air through the opening at a second flow rate which is larger than the first flow rate; wherein while the blowing and suction steps are being simultaneously carried out, ambient air is permitted to enter the developer container through an ambient air inlet.

Abstract: A semi-aqueous solvent based method using non-aromatic, halogen-free organic solvent compositions for the effective removal of flux residue from electronic component surfaces after high temperature solder interconnections in the presence of rosin based flux compositions. Rosin flux residue can be removed using hydrophobic, essentially water insoluble, propylene glycol alkylether solvents in conjunction with a surfactant, preferably an ionic and/or a mixture of a non-ionic and an ionic surfactant in the first step, then a second step involving immersion with agitation in a hydrophobic solvent with no added surfactant. This is followed by a third step of hydrophilic solvent immersion with agitation/spray, rinsing off the hydrophilic solvent with water, and then a drying step.

Abstract: This invention is directed to apparatus and a method for removing particles from a surface, such as a semiconductor wafer. A fluid is applied to the surface on which the particles are distributed so as to coat the particles with the fluid. At least some of these particles have a dimension of less than approximately one micron. A suction force is applied in the vicinity of the surface after applying the fluid so as to remove from the surface the majority of those particles having the dimension of less than approximately one micron.

Abstract: A method of cleaning a surface of an article using cleaning liquids in combination with acoustic energy. Preferably, an ultradilute concentration of a cleaning enhancement substance, such as ammonia gas, is dissolved in a liquid solvent, such as filtered deionized water, to form a cleaning liquid. The cleaning liquid is caused to contact the surface to be cleaned. Acoustic energy is applied to the liquid during such contact. Optionally, the surface to be cleaned can be oxidized, e.g., by ozonated water, prior to cleaning.

Abstract: An extraction surface cleaning apparatus is provided having an extraction head adapted to be moved over a floor surface to be cleaned, a handle mounted to the extraction head for grasping by a user and propelling the extraction head over the floor surface, and an application and recovery system fluidly interconnected with the extraction head and movable therewith to apply at least one of water and cleaning solution to the floor surface and extract the same in combination with any dirt entrained therein. A detector is mounted to the extraction head for detecting the relative speed of the extraction head relative to the floor surface and generating a signal representative of such relative speed. An indicator is operably interconnected with the detector and is adapted to receive the signal generated by the detector and provide an indication to a user representative of the signal.

Abstract: A wafer clamping apparatus is provided to secure a wafer within a chamber during wafer processing. The wafer clamping apparatus creates a pressure differential between a top surface and a bottom surface of the wafer. The pressure differential serves to pull the wafer toward a wafer support structure in contact with the wafer bottom surface, whereby the wafer is secured and maintained in an immobile state. The wafer clamping apparatus also includes options for controlling the pressure differential between the top and bottom surfaces of the wafer. The wafer clamping apparatus is implemented without requiring contact with the wafer top surface and with minimal increase in chamber design complexity.

Abstract: A solidifier for a liquid, the solidifier comprising a mixture of absorbents having different apparent densities whereby at least one absorbent is negatively buoyant and at least one absorbent is positively buoyant relative to the liquid sought to be solidified. Packaging for the solidifier is disclosed for effecting selective dispersal of the solidifier within the liquid sought to be solidified.

Abstract: A process for restoring magnetic recording tape damaged by “Sticky Shed” syndrome cleans magnetic tapes of the Backcoating which is causing their eventual degradation and destruction. The Backcoating is first removed in a multi-step process. A liquid cleaner, such as isopropyl alcohol, is applied to the Backcoating to dissolve it from and clean it off the Mylar Base. Before the liquid cleaner is applied, steps are taken to prevent the cleaner fluid from getting onto the Oxide side of the tape. The chemical cleaning is done as quickly as possible. The second step is to dry clean the Base surface of the tape to remove the remaining solvent and the debris of any remaining Backcoating. Then, the Oxide side of the tape is given a dry, non-chemical cleaning to remove the residue of contamination of the Backcoating which was deposited on the Oxide side of the tape as the result of physical contact with the Backcoating from the storage on the reel of tape.

Abstract: A method of etching a silicon-containing material in a substrate comprises placing the substrate in a process chamber and exposing the substrate to an energized gas comprising fluorine-containing gas, chlorine-containing gas and sidewall-passivation gas. The silicon-containing material on the substrate comprises regions having different compositions, and the volumetric flow ratio of the fluorine-containing gas, chlorine-containing gas, and sidewall-passivation gas is selected to etch the compositionally different regions at substantially similar etch rates.

Abstract: A method for cleaning a manufacturing apparatus, includes introducing a cleaning gas including fluorine so as to flow from upstream toward an outlet port in a reaction chamber; and flowing a protective gas which reacts with the fluorine from a vicinity of the outlet port of the reaction chamber as an introduction position.

Abstract: The present invention relates to a method for cleaning a pressurized container having at least one chemical contained therein. The pressurized container may be any type of container able to store chemicals under pressure. Preferably, however, the container is a rail tank car. Generally, the method includes: a step of injecting the container with an input gas to create a chemical/input gas mixture; a step of removing the chemical/input gas mixture via a vacuum pump; and a step of injecting the chemical/input gas mixture into a reaction tank to neutralize the chemical. The input gas may be heated nitrogen gas or heated, dry air. The reaction tank may contain a caustic material for reacting with the chemical.

Abstract: A method for providing a high flux of point of use activated reactive species for semiconductor processing wherein a workpiece is exposed to a gaseous atmosphere containing a transmission gas that is substantially nonattenuating to preselected wavelengths of electromagnetic radiation. A laminar flow of a gaseous constituent is also provided over a substantially planar surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the gaseous atmosphere such that it converges in the laminar flow to provide maximum beam energy in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The gaseous constituent is dissociated by the beam producing an activated reactive species that reacts with the surface of the workpiece.

Abstract: An improved non-portable cleaning system for performing water-based extraction and related cleaning operations is provided. A system in accordance with the invention is particularly useful for cleaning the carpeting and upholstery of vehicle interiors and can be operated with relative ease by ordinary consumers. In certain implementations, the system can be coin operated. Defoamer chemical can be automatically dispersed into a recovery tank of the system, thereby reducing foaming in the recovery tank. The recovery tank can be automatically rinsed and drained after cleaning operations are completed without requiring additional interaction by the consumer. A vending machine can be optionally provided with the system, allowing consumers to purchase cleaning supplies incident to performing cleaning operations with the system.

Abstract: The present invention provides compositions comprising an HFC component and a non-HFC component consisting essentially of methanol, having boiling points that are unexpectedly low and relatively constant, and uses thereof.

Abstract: A method for forming an etched silicon layer. There is first provided a first substrate having formed thereover a first silicon layer. There is then etched the first silicon layer to form an etched first silicon layer while employing a plasma etch method employing a plasma reactor chamber in conjunction with a plasma etchant gas composition which upon plasma activation provides at least one of an active bromine containing etchant species and an active chlorine containing etchant species.

Abstract: In a substrate processing apparatus for use in performing a reduced-pressure pull up drying method, a liquid drainage pipe (46) for draining a drainage liquid containing an organic solvent from a processing chamber (26) including therein a processing bath (10) for rinsing a substrate (W) with water is provided with a buffer tank (50) inserted therein for separation between the drainage liquid and an organic solvent vapor. A vapor discharge pipe (62) is connected in communication with an interior space of the buffer tank, and is provided with pressure regulating valves (64a, 64b) inserted therein for regulating pressure in the processing chamber at a fixed pressure higher than atmospheric pressure.

Abstract: An autonomous mobile unit for cleaning electrolytic cells is disclosed that includes a suction manifold, a pumping system, a solids-liquids separator, a recirculation manifold, a solids retainer and a control system that, when used, permits the cleaning of the electrolytic cells without the need to short-circuit the cells. A method of using the unit is also disclosed.

Abstract: The present invention discloses a method for cleaning contact lens molds. The method comprises the steps of placing a contact lens mold within an enclosed or substantially enclosed area, directing an inflow of gas under pressure into the enclosed area against the contact lens mold, and providing an outflow of gas from the enclosed area, thereby dislodging and removing debris.

Abstract: The invention is directed to a controlled environment processing chamber into which solvents, water and/or gases can be introduced for cleaning of an object. The process includes first applying a negative gauge pressure to the chamber to non-condensable gases and then introducing a solvent, solvent mixture, water or gas in either a liquid or vapor state to remove soluble contaminants from the surface of an object being processed in the chamber. Further steps recover residual solvent or solution from the object and chamber. A secondary cleaning step directs a vapor state fluid at high velocity at a solid surface of the object to remove insoluble material left behind after the pretreatment step. A final series of steps recovers any loose impediments or residual liquid or vapor from the chamber and returns the chamber to atmospheric pressure for removal of the cleaned object.

Abstract: The present invention is directed to a method for controlled environment processing of parts in a chamber or chambers wherein solvents and/or solutions used for processing the parts can be introduced. The process includes applying a negative gauge pressure to the chamber to remove air or other non-condensable gases. Next a solvent, solvent mixture or solution in either a liquid or vapor state is introduced to the chamber. A first system is then applied to recover the solvent(s) or solution(s) from the object being processed and chamber, and a second system, separate from the first system, is applied that further recovers residual solvent or solution from the object and chamber. Treatment of the part may be in the form of coating, etching, deposition, cleaning, stripping, plating, adhesion, dissolving, penetrating, anodizing, impregnating, debinding or any other process in which material is removed or deposited on a solid surface by transfer from or to a liquid or gas phase.

Abstract: The invention relates to the cleaning of contaminated accelerating or guiding electrodes of ion sources used for ion generation by desorption. A cleaning plate is used that has an outer contour similar to that of a standard sample support plate, and may be equipped with cleaning scrubbers that can be moved out when necessary to contact the electrodes. The scrubbers may include soft covers, and can carry out the cleaning by dry rubbing or with the help of high-boiling solvents for the matrix substances. The moving out of the cleaning scrubbers can be controlled by external light pulses from a laser or video camera spot light. Alternatively, the cleaning plate may be equipped with spray nozzles connected to a reservoir of cleaning fluid which is sprayed onto the electrodes, and the evacuation of the ventilated ion source chamber may be used to initiate the spraying.

Abstract: The present invention is directed toward methods for cleaning catalytic converters, particularly it pertains to methods of submerging a catalytic converter into an aqueous bath and applying a pressurized fluid through the catalytic converter forcing ash from the channels within the catalytic converter.

Abstract: Wafer holder cleaning devices, systems and methods that are capable of removing contaminants from a wafer holder. An embodiment includes a particle removal surface on the cleaning device. An embodiment of the surface is a brush. An embodiment includes moving the surface into contact with the wafer holder. An embodiment includes moving the surface into a close, non-contacting relationship to the wafer holder. An embodiment includes a vacuum removing the particles from the wafer holder. In an embodiment, the wafer holder is a spindle chuck. In an embodiment, the spindle chuck is in a fabrication station. In an embodiment, one of the cleaning device and wafer holder rotates.

Abstract: A programmed material consolidation apparatus includes at least one fabrication site and a material consolidation system associated with the at least one fabrication site. The at least one fabrication site may be configured to receive one or more fabrication substrates, such as semiconductor substrates. A machine vision system with a translatable or locationally fixed camera may be associated with the at least one fabrication site and the material consolidation system. A cleaning component may also be associated with the at least one fabrication site. The cleaning component may share one or more elements with the at least one fabrication site, or may be separate therefrom. The programmed material consolidation apparatus may also include a substrate handling system, which places fabrication substrates at appropriate locations of the programmed material consolidation apparatus.

Abstract: The present invention provides compositions comprising an HFC component and a non-HFC component consisting essentially of methanol, having boiling points that are unexpectedly low and relatively constant, and uses thereof.

Abstract: In a cleaning apparatus 500, as a pre-cleaning step, cleaning is performed in a first and a second backup cleaning bath 602 and 603 using a hydrocarbon-based cleaning liquid composed of a normal paraffin, such as normal nonane or normal decane, as a primary component and a surfactant such as a fatty acid alkanol amide or a fatty acid N-alkyl alkylene diamine, and as a post-cleaning step, immersion cleaning, shower cleaning, and vapor cleaning are performed in a cleaning bath 601 using a hydrocarbon-based cleaning liquid containing no surfactant.