Abstract: A wafer clamping apparatus is provided to secure a wafer within a chamber during wafer processing. The wafer clamping apparatus creates a pressure differential between a top surface and a bottom surface of the wafer. The pressure differential serves to pull the wafer toward a wafer support structure in contact with the wafer bottom surface, whereby the wafer is secured and maintained in an immobile state. The wafer clamping apparatus also includes options for controlling the pressure differential between the top and bottom surfaces of the wafer. The wafer clamping apparatus is implemented without requiring contact with the wafer top surface and with minimal increase in chamber design complexity.

Abstract: A concrete strainer used to separate water from wet concrete can include a volume enclosed by a screen or holes in perforated material, connected to a vacuum hose. An extender pipe can be inside the volume and also connect to the vacuum hose. The screen or holes prevent aggregates in the concrete from entering the vacuum hose and clogging an attached vacuum pump. Advantageously, when the strainer is partially submerged into the wet concrete a portion of the strainer exposed to air allows water to flow by gravity into a bottom of the strainer. The extender pipe, being submersed in said water, prevents a vacuum from being lost due to exposure to air pressure.

Abstract: In order to produce a cleaning device for cleaning a workpiece comprising a suction apparatus for sucking out impurities from an interior of the work piece wherein the suction apparatus has a particularly large suction effect, it is proposed that the suction apparatus at least one vacuum tank, at least one evacuation device for evacuating the vacuum tank, at least one ventilation line for connecting the vacuum tank to the workpiece and at least one blocking device for blocking off the connection between the vacuum tank and the workpiece.

Abstract: Systems for processing microelectronic substrates in a process chamber that incorporate improved technology for transitioning from a wet process to a dry process (especially transitioning from rinsing to drying). At least a portion of residual liquid remaining in fluid supply lines after a wet treatment is removed via a pathway that avoids purging directly onto the substrates. Related methods are also included in the present invention.

Abstract: A method of forming a highly doped layer of AlGaN, is practiced by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1×1020 cm?3 at Al mole fractions up to 65% are obtained. These levels of doping application of n-type bulk, and n/p tunnel injection to short wavelength UV emitters. Some applications include light emitting diodes having wavelengths between approximately 254 and 290 nm for use in fluorescent light bulbs, hazardous materials detection, water purification and other decontamination environments. Lasers formed using the highly doped layers are useful in high-density storage applications or telecommunications applications. In yet a further embodiment, a transistor is formed utilizing the highly doped layer as a channel.

Abstract: Embodiments of the present invention improve the efficiency of a cleaning process for cleaning a component part of a magnetic disk drive in a magnetic disk drive manufacturing line. According to one embodiment, a magnetic disk part cleaning apparatus is included in a head stack assembly (HSA) cleaning line for cleaning head stack assemblies of magnetic disk drives included in a magnetic disk drive manufacturing line. The magnetic disk part cleaning apparatus is disposed between a HSA assembly line for assembling a head stack assembly, and head disk assembly (HDA) assembly line for assembling a head disk assembly including the head stack assembly and is connected directly to at least either of the HSA assembly line and the HDA assembly line.

Abstract: Disclosed herein is a vacuum cleaner. The vacuum cleaner includes a dust container having an air inlet and an air outlet, a filter inside the dust container, a case part on the filter, and a dust removing part contacting an inner side of the filter while being rotated by air introduced into the dust container through the air inlet. The dust removing part dislodges dust from the filter while being rotated by the air, thereby preventing the filter from undergoing functional deterioration.

Abstract: Methods for processing a substrate with a fluid meniscus are provided. One method includes positioning a transition surface substantially coplanar to a substrate surface. The transition surface is defined to be adjacent to an edge of the substrate. And, moving a fluid meniscus between the transition surface and the substrate surface.

Abstract: The embodiments of the present invention provide methods for cleaning patterned substrates with fine features. The methods for cleaning patterned substrate have advantages in cleaning patterned substrates with fine features without substantially damaging the features by using the cleaning materials described. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network).

Abstract: A method for removing contaminants from a material (39), such as resin particles, includes the steps of providing a vessel (50), directing a cleaning fluid (41) into the vessel (50), transferring the material into the vessel (50), moving the material within the vessel (50), and removing contaminants from the material as cleaning fluid (41) flows in the vessel (50). The vessel (50) has a vessel inlet (52) and a spaced apart vessel outlet (54). The cleaning fluid (41) is directed into the vessel (50) so that the cleaning fluid (41) flows in the vessel (50). The material (39) is transferred into the vessel (50) through the vessel inlet (52), and the material (39) is then moved within the vessel (50) from the vessel inlet (52) towards the vessel outlet (54). The cleaning fluid (41) flowing in the vessel (50) contacts the material (39) while the material is moving from the vessel inlet (52) toward the vessel outlet (54) and removes contaminants (39) from material (39).

Abstract: A proximity head including a head surface. The head surface including a first flat region and a plurality of first conduits. Each one of the plurality of first conduits being defined by corresponding one of a plurality of first discrete holes. The plurality of first discrete holes residing in the head surface and extending through the first flat region. The head surface also including a second flat region and a plurality of second conduits. The plurality of second conduits being defined by a corresponding plurality of second discrete holes that reside in the head surface and extend through the second flat region. The head surface also including a third flat region disposed between and adjacent to the first flat region and the second flat region and a plurality of third conduits. The plurality of third conduits being defined by a corresponding plurality of third discrete holes that reside in the head surface and extend through the third flat region.

Abstract: This disclosure provides an approach for cleaning an ion implanter. In this disclosure, there is a vacuum device having an in-take port adapted to receive a contaminant removing hose. The vacuum device and hose are configured to provide constant suction to the ion implanter. A dry ice blaster having a dry ice dispensing hose is configured to supply dry ice. A sealing plate is adapted to attach to an access section of a processing region of the ion implanter. The sealing plate has a first opening configured to receive the contaminant removing hose and the dry ice dispensing hose.

Abstract: By exposing a wet chemical cleaning solution, such as hydrofluoric acid, to a pressurized inert gas ambient prior to applying the solution to patterned dielectric materials of semiconductor devices, the incorporation of oxygen into the liquid during storage and application may be significantly reduced. For instance, by generating a substantially saturated state in the pressurized inert gas ambient, a substantially oversaturated state may be achieved during the application of the liquid in ambient air, thereby enhancing efficiency of the treatment, for instance, by reducing the amount of material removal of exposed copper surfaces after trench patterning, without requiring sophisticated modifications of process chambers.

Abstract: A method and apparatus for cleaning have been disclosed.

Abstract: A chandelier cleaning apparatus includes a tent-like enclosure made of a transparent plastic. In a first embodiment, the enclosure includes a main body having a flat top panel and a flat, imperforate bottom panel. A central aperture is formed in the top panel and a zipper extends from the central aperture to an outer periphery of the top panel so that the central opening is enlarged when the zipper is open. The chandelier passes through the central aperture when the zipper is open and is enclosed within the enclosure when the zipper is closed. A mist of hot water is sprayed onto the chandelier with a wand that extends though a small opening in the enclosure. The time required to clean a typical chandelier drops from hours to minutes, no chemicals are used, and the chandelier is touched only by the hot mist.

Abstract: Methods and systems for collecting dust produced in paper making involve an air inlet passage including an opening to receive dust laden air. The opening to the inlet passage may have a width approximately equal to a width of a paper web in a paper making machine. The air inlet passage is devoid of water injection. The dust collector may include a central vortex chamber and may be defined by an outer wall and an internal guide vane. There may be a water injector mounted in the outer wall and injecting water into the central vortex chamber, and there may be a discharge outlet of the central vortex chamber connectable to a water and air separator.

Abstract: Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

Abstract: Provided is a method of cleaning a flexible substrate. The method includes the steps of: preparing a flexible substrate and detaching an impurity adhered to both surfaces of the flexible substrate using rotating first rollers disposed on the both surfaces of the flexible substrate; and removing the impurity by transferring the impurity from the first roller to a second roller using the rotating second roller having a relatively higher adhesion than the first roller.

Abstract: A method is provided, which includes applying electrochemically activated acid and alkaline water to a surface as a pre-spray, allowing the electrochemically activated acid and alkaline water to remain on the surface for a dwell time, and after the dwell time, performing a cleaning operation on an area of the surface to which the pre-spray was applied.

Abstract: An exhaust foreline for purging fluids from a semiconductor fabrication chamber is described. The foreline may include a first, second and third ports independently coupled to the chamber. A semiconductor fabrication system is also described that includes a substrate chamber that has a first, second and third interface port. The system may also include a multi-port foreline that has a first, second and third port, where the first foreline port is coupled to the first interface port, the second foreline port is coupled to the second interface port, and the third foreline port is coupled to the third interface port. The system may further include an exhaust vacuum coupled to the multi-port foreline.

Abstract: The present invention is a method of cleaning an object in an open aqueous cleaning system. The method is directed to an open cleaning vessel into which water used for cleaning a material or object can be introduced. A means is provided for introducing a reactant chemical to the vessel to form an aqueous solution. Cleaning of the surface is in the form of bubble formation on the part that vaporizes the chemical in order to react the oxidizer in the vapor state to the exposed surface at the bubble growth area. Treatment in the form of etching or any other process in which material is removed from a solid surface displaces the liquid residue from the surface. The resulting process produces no dissolution or emulsion of the contaminant and therefore can be easily separated from the chemical cleaner. The process also conserves chemistry, water, energy, and reduces pollution.

Abstract: An apparatus for removing haze in a photo mask includes sealed chamber having a bake module disposed therein to support a photo mask, a reactant gas feed line to feed a reactant gas into the chamber, and a discharge device to discharge impurities in the chamber to the outside.

Abstract: The present invention is directed to a process for treating an oily mixture consisting of hydrocarbons, solid particles, and water. The steps of the process include placing the oily mixture into a reactor chamber, purging the reactor chamber with an inert gas, and creating a steam bath within the inert gas filled reactor chamber, the steam surge freeing hydrocarbon matter from the solid particles. The process further includes elevating reactor chamber temperature to a boiling point temperature corresponding to the hydrocarbons in the oily mixture, the elevated temperature vaporizing the hydrocarbons are vaporized within inert atmosphere. The reaction chamber is vented and the off-gas is processed into a hydrocarbon product while the de-oiled solid particles are discharged from the reaction chamber as a raw material or for disposal.

Abstract: An apparatus, system and method for preparing a surface of a substrate using a proximity head includes applying a non-Newtonian fluid between the surface of the substrate and a head surface of the proximity head. The non-Newtonian fluid defines a containment wall along one or more sides between the head surface and the surface of the substrate. The one or more sides provided with the non-Newtonian fluid define a treatment region on the substrate between the head surface and the surface of the substrate. A Newtonian fluid is applied to the surface of the substrate through the proximity head, such that the applied Newtonian fluid is substantially contained in the treatment region defined by the containment wall. The contained Newtonian fluid aids in the removal of one or more contaminants from the surface of the substrate. In one example, the non-Newtonian fluid can also be used to create ambient controlled isolated regions, which can assist in controlled processing of surfaces within the regions.

Abstract: A method and apparatus for removing a first liquid from a surface of a substrate is provided. A second liquid is supplied to at least part of a surface of a substrate having a rotary movement. The rotary movement has a center of rotation and an edge of rotation. The second liquid is directed from the center of rotation to the edge of rotation using a nozzle. A dry zone is created on the substrate as the position of the spray moves from the center of rotation to the edge of rotation. As a result, the first liquid and the second liquid are removed from the surface of the substrate.

Abstract: A method of cleaning a transparent device in a thermal process apparatus, wherein the transparent device is disposed in a chamber of a thermal process apparatus, and the transparent device includes a wafer holder for carry a wafer disposed under the transparent device, and an energy source output device disposed above the transparent device in the chamber, is provided. The method of the present invention includes performing a surface treatment step to clean a surface of the transparent device.

Abstract: A process of washing plastics contaminated with polychlorinated biphenyls (PCBs) is provided to reduce the concentration of the PCBs. A two-step process includes a first washing step using a selected washing solution or solvent, such as, a non-flammable solvent, and followed by a second step using thermal desorption. The two-step process enables reducing the concentration of PCBs in polymers, such as recovered from shredder residue, for example, to as low as 0.253 PPM. One of the preferred solvents is Perchloroethylene.

Abstract: A multi-chambered deposition pin wash station is provided. The wash station includes a lower chamber and an upper drain basin connected by a plurality of wash tubes. Cleaning fluid is provided to the lower chamber and passes through the cleaning tubes into the upper drain basin. The cleaning tubes are adapted to clean a single deposition pin with a single tube per wash cycle.

Abstract: A container rinsing system (10) has an air nozzle adapted to be positioned proximate an opening of the container and adapted to direct a supply of compressed air to the container. A vacuum member is adapted to be in communication with a vacuum source. The vacuum member is positioned around the air nozzle and adapted to vacuum foreign particles away from the container.

Abstract: A rotary valve having inner and outer sleeves includes multiple ports configured to provide pressure and vacuum pulses when the sleeves are rotated with respect to each other. A source of pressure and vacuum is connected to the rotary valve, and the inner sleeve is rotated to generate pressure and vacuum pulses. The alternating pressure and vacuum pulses may be used to remove obstructions in conduits such as piping systems. The rotary valve may also provide static positions where no vacuum or pressure is available. The valve may be motor driven and the pressure/vacuum pulse frequency may be controlled based upon the relative speed of rotation of the sleeves.

Abstract: An object is subjected to high-pressure processing by bringing at least a high-pressure fluid into contact with the object under pressure in a high-pressure processing chamber, and then the high-pressure processing chamber is depressurized while the temperature in the chamber is controlled to be maintained above a temperature achieved by an adiabatic expansion, the adiabatic expansion starting from the pressure and temperature at the end of the high-pressure processing step. To control in such a way, the temperature in the high-pressure processing chamber is controlled so as to suppress or recover a temperature descent caused by an adiabatic expansion during the depressurizing step. This solves a problem in which the temperature is decreased to the vapor-liquid phase coexistence region or a region in which a solid is deposited.

Abstract: A method of removing dust, dirt and the like from the surface of a paper substrate comprises the steps of transporting the paper substrate along a path of travel, and training the paper substrate over and in direct contact with at least a portion of the outer surface of a vacuum drum having openings therein. Suction is applied to the openings as the paper moves over the drum at a slightly different linear velocity from the surface velocity of the drum. Dust, dirt and the like are drawn away from one surface of the paper substrate through the openings of the drum as the paper substrate sweeps over the vacuum drum surface.

Abstract: The invention provides a method of cleaning the surface (3) of a wafer (1), comprising a hot rinse step in which the wafer (1) is at a temperature that is at least 100C higher than room temperature, the wafer (1) is rotated around an axis perpendicular to the wafer surface (3) and water is dispensed on the wafer surface (3). Thereafter a first drying step is performed in which the wafer (1) is rotated around the axis perpendicular to the wafer surface (3) and in which the humidity of the environment is such that the water on the wafer surface (3) is partially removed while the wafer surface (3) remains covered with a film of water (13). The first drying step is followed by a second drying step, which removes the film of water (13) from the wafer surface (3). The method according to the invention advantageously reduces metal ion contamination on the wafer surface (3).

Abstract: A system for inspecting wearable people footwear, comprising: a person's standing grille, an air stream chamber, whereas the grille is one of the partitions of the chamber, a plurality of blowing jets surrounding the object and a vacuum port. While said object is being under normal atmospheric conditions, the particles are being detached from the object exterior surface by said plurality of blowing jets detached particles are passing through said grille holes and are carried by near surface airfoil streams generated within the chamber and directed towards the vacuum port. An analyzer instrument analyzes the particles, collected at the particle collection area.

Abstract: [Object] It is an object of the invention to provide a cleaning apparatus for cleaning a precision substrate capable of preventing a contamination factor from adhering again, to prevent a natural oxide film from being formed, and to prevent a water mark.

Abstract: A method and control system for treating a hafnium-based dielectric processing system in which a system component of the processing system is exposed to a chlorine-containing gas. A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine-containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system. The control system can utilize a computer readable medium to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-containing gas a chlorine-containing etchant for dissolution of a residual hafnium by-product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process, and to exhaust a chlorinated hafnium product from the processing system.

Abstract: The invention relates to a method for keeping vacuum piping, particularly the vacuum piping (2, 3, 4) of the waste systems of ships and similar, clean, or for assisting it. The device according to the invention is used to feed acid and bacteria are fed to the end of each vacuum pipe run (3). The feeding takes place mainly automatically by means of controllable hose pumps (102), provided a predefined vacuum prevails in the vacuum pipe run (3).

Abstract: The invention relates to a cleaning container (12) comprising an inlet (120) which is connected to the water container (11), and an outlet for connecting a suction tube (43), the outlet (122) being embodied as a hydrant (124) for a suction handpiece (42) applied to the suction tube (43). The cleaning container (12) can be filled with the water from the water container (11) especially by means of a negative pressure applied to the outlet when the suction tube (43) is connected.

Abstract: The present application relates to a method and device for cleaning surfaces. In one embodiment, a cleaning device includes a cleaning tool, a motor, a reservoir, an extractor, and a recovery tank. The reservoir stores fluid and may act as a base of the cleaning device. The extractor suctions used fluid from the surface and may be removably attached to the reservoir such that the extractor may be raised and lowered relative to the surface. The recovery tank stores the used fluid from the extractor and may be located adjacent the reservoir. The reservoir may also be formed to fit at least partially around the motor. The cleaning device may also be designed such that at least a portion of the weight of the fluid in the reservoir and the used fluid in the recovery tank is over the cleaning tool.

Abstract: By constructing tank cleaning equipment according to the invention such that it comprises a cleaning jetting part (7, 9) as well as a suction part (4), the equipment can work with the same cleaning medium which is recirculated. This saves supply of fresh cleaning medium, and since used medium is thus not discharged, it is not necessary to establish deposit facilities to avoid pollution. Furthermore, this equipment according to the invention may advantageously be used for keeping so-called drilling mud in a mixed and thus ready-to-use state, even when left to stand for an extended period of time in a tank. The nozzle jets (10) thus keep the mud in the tank in a constantly mixed state, and the mud can therefore be sucked through the suction pipe (20) for pumping in the drill pipe, it being ensured that the mud is homogeneous and has a suitable viscosity.

Abstract: A wafer preparation method is provided for producing a wet region and then a corresponding dry region on the wafer. Brushing produces the wet region on the wafer. As the brushing moves in a selected scan operation across the wafer, a generating operation forms a meniscus that follows the brushing and dries the wet region. The generating operation produces the meniscus at least partially surrounding the wet region scrubbed by the scrubbing. The controlled meniscus is formed by applying fluid to the surface of the wafer and simultaneously removing the fluid. The scan operations may be selected so the brushing scrubs the wet region and then the meniscus forms the dry region where the scrubbing took place. The scan operations include a radial scan, a linear scan, a spiral scan and a raster scan.

Abstract: A system for measuring fume generation rates and total fume emissions of welding and allied processes includes a fume collection chamber and an automated welding assembly. The fume collection chamber includes a fume chamber housing, a door attached to the housing, a filter support connected to the housing, a hood connected to the housing and a connector attached to the housing and/or the hood. The automated welding assembly includes a rail, a carriage moveably mounted on the rail, a gun arm connected to the carriage and a welding gun mounted to the gun arm.

Abstract: Mixtures of fluorine and inert gases like nitrogen and/or argon can be used for etching of semiconductors, solar panels and flat panels (TFTs and LCDs), and for cleaning of semiconductor surfaces and plasma chambers. Preferably, fluorine is comprised in an amount of 15 to 25 vol.-% in binary mixtures. The gas mixtures can be used as substitute or drop-in for respective mixtures comprising NF3 and permit a very flexible operation of plasma apparatus. For example, apparatus tuned for NF3/Ar mixtures can be operated without further tuning using fluorine and argon, optionally together with nitrogen. The fluorine content is preferably in the range of 1 to 5 vol.-%, if ternary mixtures of fluorine, nitrogen and argon are used.

Abstract: A method and apparatus for cleaning a plasma enhanced chemical vapor deposition chamber is described. In one embodiment, the method includes providing a first cleaning gas to a processing region within the chamber; and then providing a second cleaning gas to the processing region. In another embodiment, the method includes providing a substantially pure fluorine gas to a processing chamber.

Abstract: A bonding apparatus for bonding materials onto a substrate supported on a substrate support is provided with an air generator that is arranged and configured to direct an air flow onto the substrate during bonding. The air generator is located on one side of the substrate support, whereas a suction device is located on an opposite side of the substrate support which is operative to draw the air flow away from the bonding apparatus. The air generator further comprises an air knife that is operative to generate a unidirectional air flow over an entire length of the substrate during bonding.

Abstract: A cluster tool includes a transfer chamber connected to a plurality of vacuum chambers. An additional process chamber connected to the transfer chamber includes a high pressure chamber assembly seated on a housing. The high pressure chamber assembly, which is adjustable between an open position and a closed position, includes an upper chamber portion and a lower chamber portion. Hydraulic cylinders mounted on the upper chamber portion and having chamber rods that attach to the lower chamber portion are configured to move the lower chamber relative to the upper chamber portion between the two positions. When the two portions are brought together into the closed, the high pressure chamber assembly forms a high pressure chamber suitable for processing wafers with supercritical CO2. Once the high pressure chamber is formed, a region between lower chamber portion and a housing may be evacuated to form a vacuum chamber outside a portion of the high pressure chamber.

Abstract: Methods and compositions for purging and cleaning a semiconductor fabrication system are disclosed herein. In general, the disclosed methods utilize solvents comprising hydrofluoroethers. Hydrofluoroethers are non-toxic and have low moisture content, preventing heat generation from organometallic precursor hydrolysis. In an embodiment, a method of cleaning a semiconductor fabrication system comprises dissolving at least one chemical precursor used in semiconductor fabrication in at least one delivery line with a solvent to clean the at least one delivery line. The solvent generally comprises a hydrofluoroether. The methods and compositions may be used in a variety of semiconductor film deposition processes.

Abstract: The present invention refers to an aqueous composition comprising one or more amphoteric, organic polynitrogen-compounds having at least 3 nitrogen atoms contained in the molecule in the form of an amine and/or amide and one or more types of inorganic nanoparticles, a concentrate comprising said composition and to a method for treating and/or cleaning a surface which uses said composition.

Abstract: The present invention provides a method of cleaning a storage case to be used for storing or transporting mask substrates such as photomasks and photomask blanks, semiconductor substrates such as semiconductor wafers, pellicles, or the like. The present invention: facilitates a regular cleaning operation, can be used also for a storage case of a complicated shape, does not require a large scale equipment or an expensive equipment to facilitate an environmental countermeasure, and provides high cleaning effect. The method of cleaning a storage case polluted by adhesion of a foreign substance of an organic material, an ionic foreign substances or an ionic crystal foreign substance physically absorbed, comprises a step of placing the storage case still in air flow of cleaned air or an inert gas in a temperature range from room temperature to 80° C. for desorbing and removing the foreign substance adhered to the storage case.

Abstract: Herein disclosed is a device and a method for liquid treatment of a disc-like article comprising rotating a disc-like article, dispensing liquid onto the disc-like article when rotated, collecting liquid, which is flung off the disc-like article when rotated, providing a plate arranged parallel to the disc-like article and facing the disc-like article when rotated, and directing gas parallel to the plate across the plate.