Abstract: A cleaning unit (A) includes a movable cart (20) which carries a cleaning system for cleaning baked-on residues from walls (10) of a sterilizer chamber (12). Alkaline and acid cleaning solutions (180, 182), for removing organic and inorganic residues, respectively, from the chamber, are stored in a multi-compartment container carried by the cart and having two storage compartments (52, 54). The alkaline and acid solutions are sequentially sprayed over the chamber walls and returned to their respective compartments. After cleaning is complete, a wall (200) which separates the two compartments is punctured. The two cleaning fluids are thereby mixed together to form a neutral or near neutral solution which is disposable in a sanitary sewer system without further treatment.

Abstract: A cleaning unit (A) includes a movable cart (20) which carries a cleaning system for cleaning baked-on residues from walls (10) of a sterilizer chamber (12). The cleaning system includes a lid (80) which is mounted over an opening (82) to the chamber. In one embodiment, the door (232) of the chamber provides the lid. An articulating nozzle (124) extends from the lid into the interior of the chamber. Alkaline and acid cleaning solutions (180, 182), for removing organic and inorganic residues, respectively, from the chamber, are stored in two storage containers (52, 54) carried by the cart. A first pump (60), mounted on the cart, pumps first the alkaline, then the acid cleaning solution to the nozzle. A second pump (62), mounted on the cart, connects with a scavenge fitting (166) in the chamber to return the cleaning fluid to the respective storage container.

Abstract: A process for the wet-chemical surface treatment of a semiconductor wafer following a mechanical surface treatment, in particular following a mechanical surface treatment in a lapping machine, includes a sequence of treatment steps. The process essentially includes a wet-chemical surface cleaning, preferably for neutralizing and eliminating the lapping slurry, an acid etching treatment, preferably for eliminating the mechanically imposed damage and for surface smoothing and removal of metals. There is a final step of drying and rendering the cleaned and etched surface hydrophilic.

Abstract: An automatically analyzing apparatus includes a plurality of reaction containers for reacting a sample with a reagent, and a reaction container washing unit for washing the reaction containers through a plurality of washing steps. The reaction container washing unit includes a plurality of storage parts in each of which washing liquid containing therein reacted substance is reserved. The plurality of storage parts are sorted with different reacted substance concentrations. A supply part of the reaction container washing unit selects washing liquid of a desired reacted substance concentration among the plurality of storage parts in accordance with respective washing conditions of the reaction containers and supplies the selected washing liquid into the reaction containers for washing the respective reaction containers.

Abstract: A semiconductor wafer cleaning method is provided. After cleaning the wafer with a chemical cleaning solution, the wafer is placed in a cleansing tank that fills with deionized water. A neutralizer is then added to the cleansing tank. The surface of the wafer is then neutralized to a neutral pH value. Thereafter, the chemical cleaning solution residue on the wafer surface is removed by cleaning the wafer with deionized water.

Abstract: A method and an apparatus that uses a surfactant to clean a hydrophobic wafer is provided. In a first aspect, the method may clean and dry a wafer without applying pure DI water to the wafer. In a second aspect, the method may clean a wafer by applying pure DI water to the wafer only for a short duration of time such that the DI water application ceases prior to or as soon as a surfactant solution is rinsed from the wafer thereafter the wafer is dried. In a further aspect a hydrophobic wafer is maintained wetted with surfactant as it is transferred between cleaning apparatuses and is rinsed via diluted surfactant or via a brief DI water spray and is thereafter dried.

Abstract: The present invention is directed to an ophthalmic product comprising, as a colouring agent, the extract of an alga. A preferred class of alga the extract of which is useful in the present invention is blue alga (Spirulina type), more preferred it is Japanese blue alga (Spirulina platensis). The ophthalmic product is preferably a contact lens care product.

Abstract: A sintered silicon carbide has a high density and only small amounts of organic and inorganic impurities on the surface and in the vicinity of the surface, i.e., a density of 2.9 g/cm2 or more and an amount of each impurity smaller than 1.0×1011 atoms/cm2 on the surface and in the vicinity of the surface. A method for cleaning sintered silicon carbide in a wet condition comprises treating sintered silicon carbide in a step of dipping into a quasi-aqueous organic solvent, a step of dipping into an aqueous solution of an ammonium compound, a step of dipping into an aqueous solution of an inorganic acid and a step of dipping into pure water. Organic and inorganic impurities present on the surface and in the vicinity of the surface of the sintered silicon carbide are removed easily in accordance with the method.

Abstract: Stainless steel is pickled by a chemical and/or electrochemical pickling process using an acid liquid, containing substantially no nitric acid. The process uses a spent electrolyte solution from an electrochemical, neutral salt pickling tank, such as a sodium sulfate pickling tank. The spent electrolyte solution is added to an acid solution to form a pickling acid capable of pickling stainless steel, oxidizing Fe2+ to Fe3+ and reducing Cr6+ to Cr3+.

Abstract: The stainless steel product has passive film on the surface, and at least one of a conductive metallic inclusion of carbide and a conductive metallic inclusion of boride protrudes through an outer surface of passive film from stainless steel under the passive film. The stainless steel product has low contact electrical resistance and suitable for use in bipolar plates of a polymer electrode fuel cell.

Abstract: The present invention provides advantages as a method of cleaning movie screens, such as vinyl screens, enhanced screens, painted screens, taurus screens, rear projection screens, and silver screens. In one embodiment, the present invention is a method of cleaning a movie screen by applying a cleaning chemical to the movie screen, wiping the movie screen with a first towel, applying a neutralizer to the movie screen, wiping the movie screen with a second towel, and drying the movie screen.

Abstract: A method of wet-cleaning a sintered silicon carbide to remove, easily and within a short period of time, organic and inorganic impurities present on a surface and in a vicinity of the surface of the sintered silicon carbide. The method includes steps of: dipping the sintered silicon carbide into a quasi-aqueous organic solvent; and dipping the sintered silicon carbide into an aqueous solution of an inorganic acid, wherein at least one of the steps is conducted while ultrasonic waves are applied.

Abstract: A method of processing a substrate. A polymer is applied to a substrate. A portion of the polymer is not retained on the substrate and is collected by a catch basin. The catch basin is cleaned by exposing the catch basin and collected polymer to a material comprising acetic acid.

Abstract: A cleaning unit (A) includes a movable cart (20) which carries a cleaning system for cleaning baked-on residues from walls (10) of a sterilizer chamber (12). Alkaline and acid cleaning solutions (180, 182), for removing organic and inorganic residues, respectively, from the chamber, are stored in a multi-compartment container carried by the cart and having two storage compartments (52, 54). The alkaline and acid solutions are sequentially sprayed over the chamber walls and returned to their respective compartments. After cleaning is complete, a wall (200) which separates the two compartments is punctured. The two cleaning fluids are thereby mixed together to form a neutral or near neutral solution which is disposable in a sanitary sewer system without further treatment.

Abstract: A sintered silicon carbide has a high density and only small amounts of organic and inorganic impurities on the surface and in the vicinity of the surface, i.e., a density of 2.9 g/cm2 or more and an amount of each impurity smaller than 1.0×1011 atoms/cm2 on the surface and in the vicinity of the surface. A method for cleaning sintered silicon carbide in a wet condition comprises treating sintered silicon carbide in a step of dipping into a quasi-aqueous organic solvent, a step of dipping into an aqueous solution of an ammonium compound, a step of dipping into an aqueous solution of an inorganic acid and a step of dipping into pure water. Organic and inorganic impurities present on the surface and in the vicinity of the surface of the sintered silicon carbide are removed easily in accordance with the method.

Abstract: Disclosed is a washing solution of a semiconductor substrate which comprises 0.0001 to 0.1% by weight of an organic acid and 0.005 to 0.25 % by weight of hydrofluoric acid and has pH of 2 to 4. When a contaminated substrate is immersed in a washing solution, a naturally oxidized film on the surface of the substrate is removed by hydrofluoric acid, and fine particles on the film, metal impurities and metal impurities in the film transfer to the liquid. Since the washing solution is an acidic solution containing an organic acid and having pH of 2 to 4, fine particles are charged to minus as those of the fine particles, and the metal impurities ions in the liquid becomes minus complex ions due to complexing effect of the organic acid. As the results, surface potentials of the respective fine particles and metal impurities are each minus which is the same as that of surface potential of the substrate so that adhesion or re-adhesion to the substrate can be prevented.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In a first embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. Following the chemical treatment, the semiconductor structure is transferred directly to a second treatment vessel where it is rinsed with DI water and then dried. The second treatment vessel is flooded with both DI water and a gas that is inert to the ambient, such as nitrogen, to form a DI water bath upon which an inert atmosphere is maintained during rinsing. Next, an inert gas carrier laden with IPA vapor is fed into the second treatment vessel. After sufficient time, a layer of IPA has formed upon the surface of the DI water bath to form an IPA-DI water interface.

Abstract: A method of removal of polymers of the type including bromine, chlorine, silicon, and carbon, present on a semiconductor wafer partly covered with resist, including of rotating the wafer in its plane around its axis, in an enclosure under a controlled atmosphere, at ambient temperature, including the steps of rotating the wafer at a speed included between 500 and 2000 CPM in an enclosure filled with nitrogen; sprinkling the wafer with water, substantially at the center of the wafer; introducing hydrofluoric acid during a determined cleaning time, while maintaining the sprinkling; and rinsing the wafer by continuing the sprinkling to remove any trace of hydrofluoric acid from the wafer, at the end of the cleaning time.

Abstract: In a cleaning method and a cleaning apparatus of a silicon substrate, after wet cleaning or etching of the substrate having a silicon surface is carried out, and during or after a pure water rinse of the substrate, an oxide film with a thickness of 10 to 30 Å is formed on the silicon surface by rinsing the substrate by pure water added with an oxidizer, and then the substrate is dried. Since drying is carried out after the oxide film is formed on the silicon surface, the occurrence of a water mark can be prevented.

Abstract: A process for cleaning a final polished semiconductor wafer in a single operation (i.e., following final polishing, a process or action is directed at the wafer which includes drying the wafer only once, thereby yielding a polished wafer surface substantially free of contaminants). The process comprising contacting the polished wafer with an aqueous solution comprising an oxidizing agent to oxidize organic carbon on the surface of the polished wafer. After oxidizing the organic carbon, immersing the polished wafer in an megasonically agitated alkaline cleaning solution to reduce the surface concentration of contaminant particles exceeding 0.2 &mgr;m in diameter. Withdrawing the polished wafer from the alkaline cleaning solution and rinsing it with deionized water. After rinsing, immersing the polished wafer in an acidic cleaning solution to reduce the surface concentration of contaminant metal atoms. Withdrawing the polished wafer from the acidic cleaning solution and immersing it in an ozonated aqueous bath.

Abstract: The water-repellent mixture comprises i) a halogenated dispersant chosen from the group constituted by a totally halogenated molecule and a partially halogenated molecule with at least one atom of hydrogen and ii) a copolymeric silicone having a hydrophilic function, for drying solids by the movement of water, the copolymeric silicone preferably being a polyalkylineoxide modified polydimethylsiloxane of formula: with 0≦m≦100, 4≦n≦50 and R being a radical chosen from the group of radicals constituted by a hydrogen atom, an alcohol group, an amine group and a polyalkyl group containing 1 to 5 carbon atoms.

Abstract: A cleaning method for a quartz substrate includes mixing a rinsing solution and mixing a cleaning solution such that the solutions are electrically conductive. The rinsing solution is carbonated and is used in more than one step within the method. The cleaning solution includes ammonium hydroxide. As a result of the electrical conductivity of the solutions, the cleaning method is less susceptible to surface damage caused by electrostatic discharge. The sequence of steps includes rinsing the quartz substrate with the carbonated rinsing solution, removing loose contaminants by a high pressure application of the cleaning solution, and removing organic contaminants in a strong oxidation environment using a solution of sulfuric acid and hydrogen peroxide. The carbonated rinsing solution is again applied, followed by another high pressure application of the cleaning solution and a final rinse with the carbonated rinsing solution.

Abstract: The rinse washing of the present invention is completed in a short time by washing with a rinse washing liquid including a safe carbonic water or a carbonic acid gas after the manufacturing line is washed by an alkaline washing liquid when the manufacturing line is washed so that the present invention can reduce the water and energetic waste and can drive the manufacturing line efficiently.

Abstract: Process for rinsing a metallized substrate subject to metal microcorrosion using an acidic aqueous rinsing solution wherein the rinsing solution comprises at least one strong inorganic acid in an amount enough to reduce the alkalinity of the rinse solution to a level low enough to reduce microcorrosion of the said metal layer while rinsing.

Abstract: Medical instruments, such as endoscopes, may be sterilized or disinfected in a liquid chemical sterilant (LCS). The LCS is of sufficient potency to sterilize the contaminated medical device. In addition it is self-degrading, non-contaminating, and non-corrosive. It does not require the addition of chemically contaminating anti-corrosive compounds and detergents. Preferred LCS for use in the invention include peracetic acid, silver activated hydrogen peroxide and acidic sodium hypochloride. A particularly preferred LCS is peracetic acid since it has particular applicability with plastic components of medical devices.

Abstract: Electrostatic discharges that occur during solid CO.sub.2 cleaning of a substrate (10) can be virtually eliminated by chilling the substrate so that moisture in the atmosphere, in the form of water droplets(30), condense on the substrate surface (14), thereby forming a continuous film of water (28). The water in the film (28) reacts with the solid CO.sub.2 (24) to form carbonic acid that dissociates into free ions that neutralize the charge on the solid CO.sub.2.

Abstract: Compositions and methods for cleaning metal and non-metal surfaces utilizing a nonionic surfactant and an enzyme are disclosed. A composition comprised of at least one nonionic surfactant and at least one enzyme and having a pH of between 6 and 9.5 is specifically disclosed. A method for cleaning a surface using this composition, and a method for cleaning a surface using a first composition comprising at least one nonionic surfactant and a second composition comprising at least one enzyme are also disclosed.

Abstract: The present invention relates to methods of cleaning-in-place soiled process equipment comprising circulating a solution comprising a protease and a lipase for a sufficient period of time to permit action of the enzymes.

Abstract: The invention relates to a method of cleaning a filtration installation of the type including a plurality of immersed membranes in at least one tank containing an effluent to be filtered, said method being characterised in that it includes the steps consisting of:at least partially draining the effluent contained in said tank in a way that exposes said membranes to the air;causing at least one cleaning solution to pass through said membranes along a flow path opposite to the filtration flow of the effluent by feeding in said cleaning solution from the permeate side of said membranes.

Abstract: A process provides for the production of fertilizer solutions from brewery cleaning solutions. The process comprises the steps of combining a brewery caustic potash cleaning solution with a brewery nitrogen- or phosphorus-containing acid cleaning solution in mutually neutralizing amounts. This process results in the production of a fertilizer solution comprising a neutralized potassium salt solution having nitrogen-containing, organic, brewing materials entrained therein. If desired, spent grains and/or spent yeast from the brewing process can be added to provide further nutrients.

Abstract: Method for applying an aqueous benzyl alcohol paint strippling composition to the surface of a high strength steel substrate or of an assembly containing high strength steel components, such as steel fasteners on the surface of aircraft assemblies, while minimizing the effect of hydrogen-induced embrittlement, hydrogen-induced cracking and corrosion normally caused by aqueous benzyl alcohol. The invention comprises applying a liquid silane to the surface of the steel substrate or components immediately before and/or as an ingredient of a novel aqueous benzyl alcohol composition of the present invention which contains from about 1% to 10% by volume of the liquid silane.

Abstract: A method of cleaning a silicon material using a polyvinyl acetal sponge material. The sponge material is purified by an extracting process which includes alternating exposure of the sponge material to acid and oxidizing solutions. The extracting process permits residual amounts of calcium, zinc, sulfate, arsenic, barium, cadmium, chloride, chromium, copper, iron, lead, manganese, magnesium, mercury, nitrate, potassium, selenium, silica, silver and sodium to be 2 ppm or less. Following the extracting process, the silicon material is contacted with the sponge material to thereby clean the silicon material.

Abstract: A method for removal of an organic film from a metal substrate comprising: (a) preparing a stripping bath comprising a mixture of a salting-out agent, a carboxylic acid, and an organic solvent, said organic solvent in a concentration at about or greater than its solubility limit in water and having a solubility limit of 1/2% to 50% by weight in water, wherein said organic solvent is selected from the group consisting of butoxy ethanol, hexoxy ethanol, butoxy-2-ethoxy ethanol, dibasic ester, 2-ethyl hexyl alcohol, straight chain alcohol having from 6 to 16 carbons, N-methyl-pyrrolidone, and mixtures thereof, and said carboxylic acid is selected from the group consisting of hydroxy carboxylic acids, lactic acid, glycolic acid, citric acid, malic acid, tartaric acid, and mixtures thereof, and said salting-out agent is selected from a group consisting of glucoheptonate, gluconate, and mixtures thereof, and (b) immersing said metal substrate in the stripping bath of step (a) for a predetermined period of time to l

Abstract: A method for repairing a thermal barrier coating on an article designed for use in a hostile thermal environment, such as turbine, combustor and augmentor components of a gas turbine engine. The method is particularly suited for the repair of thermal barrier coatings composed of an aluminide bond coat formed on the surface of an article, and an insulating columnar ceramic layer overlaying the bond coat. Processing steps generally include preparing a powder mixture of a halogen-containing activator and an aluminum-containing material, contacting the ceramic layer with the mixture, and then heating the ceramic layer for a duration sufficient to cause the halogen-containing activator to deteriorate the ceramic layer, while the aluminum-containing constituent of the mixture prevents the bond coat from being attacked or otherwise depleted by the halogen-containing activator. A suitable composition for the mixture is about 0.5 to about 1 weight percent of the halogen-containing activator and about 0.

Abstract: Beverage containers such as kegs are cleaned by pre-rinsing the containers and then cleaning the containers with a cleaning solution. Post-rinse of the containers is carried out in order to remove the cleaning solution. The post-rinse includes an earlier rinsing phase in which a containers is rinsed with a first rinsing fluid, and a later rinsing phase rinses out one of the containers that has gone through the earlier rinsing phase with a second rinsing fluid. The second rinsing fluid that has been used in the later rinsing phase is used as the first rinsing fluid in the earlier rinsing phase of the post-rinse.

Abstract: Compositions for use as soil removing agents in the food processing industry are disclosed. Food soiled surfaces in food manufacturing and preparation areas can be cleaned. The compositions are manufactured in the form of a concentrate which is diluted with water and used. The cleaning materials are made in a two part system which are diluted with a diluent source and mixed prior to use. The products contain high quality cleaning compositions and use a variety of active ingredients. The preferred materials, in a two part system contain detergent compositions, enzymes that degrade food compositions, surfactants, low alkaline builders, water conditioning (softening) agents, and optionally a variety of formulary adjuvants depending on product form.

Abstract: In order to quickly and inexpensively rinse recyclable acid bottles which contain acid residues or decontaminate pieces of apparatus which are contaminated with acid, the interior of the bottles or apparatus is rinsed with an alkaline solution and then with water. The exterior of the bottles or apparatus is rinsed with water. The alkaline solution is stored in fiberglass canisters and is displaced to spray nozzles by the application of air under pressure. Valves which control the supply of water and alkaline solution are controlled by either solenoids or by air-activated devices. In the case of air-activated valves the air under pressure which is used to force the alkaline solution toward the spray nozzles can be used to operate the valves.

Abstract: A chemical solution for neutralizing treading surfaces includes a neutralizing agent such as an alkaline silicate neutralizing solution, a suitable dyestuff (non-indicator dye) and a masking agent (indicator dye) for masking the true color of the dyestuff. The masking agent becomes colorless at a pH of 7.0 or greater. The chemical solution is applied to a suitable treading surface, such as a ceramic tile floor, a suitable time after an acid treatment solution of hydrofluoric acid and nitric acid has been applied to the treading surface. Use of the indicator dye in combination with the non-indicator dye in the chemical solution yields a strongly visible color change which distinguishes the areas that have been sufficiently supplied with neutralizing solution from those that have not been sufficiently supplied with the neutralizing solution.

Abstract: A method is provided for salvaging thermoplastic substrates from discarded coated thermoplastic articles which have been surface treated with a protective or decorative organic coating. The discarded coated thermoplastic substrates, such as polycarbonate substrates, can be granulated, treated with an aqueous caustic-surfactant solution which contains an anionic, nonionic or mixture thereof surfactant, and where the treated thermoplastic substrates are thereafter washed until a neutral pH of the wash rinse-off solution is achieved.

Abstract: A washer apparatus (10) includes a washing chamber (W) with a plurality of spray nozzles (N) and a pump (P1) for circulating the washing fluid (F) through the spray nozzles (N) for cleaning the contents of the washing chamber (W). A pH sensor (20) contacts the washing fluid (F) and a digital pH controller (30) connected to the pH sensor (20) generates digital pH values of the fluid (F). An acid neutralizing system (80) and an alkaline neutralizing system (90) are provided for selectively injecting acid neutralizer and alkaline neutralizer into the reservoir (S, T), respectively. An electronic controller (12) controls the operation of the washer (10) and the acid and alkaline neutralizer injection systems (80, 90) in response to the pH of the washing fluid (F) as determined by the digital pH controller (30).

Abstract: A process for pipe system cleaning and in-line treatment of spent pipe system cleaning solution prior to disposal. A cleaning solution is added to a fouled pipe system to clean the pipe system of scale or deposits. The spent cleaning solution is recirculated through the cleaned pipe system and a treatment agent is added to the recirculating spent cleaning solution. The treatment agent is recirculated until the spent cleaning solution is environmentally safe for disposal. The in-line treatment process minimizes the volume of treated spent cleaning solution and minimizes the time required to treat the spent cleaning solution.

Abstract: The hard floor surface in common food preparation sites can have complex soils that are difficult to remove. Such floor can have two surface qualities. A first surface contains an array of quarry tile. The second surface contains a grid of grout lines surrounding the tile completing the surface. Each surface provides particular soil removal problems. We have found a unique product sequence, used in a method for cleaning hard surface or hard quarry tile floors, that is surprisingly effective in removing soil from both the floor tile surface and grout lines. The resulting clean floor surface maintains a clean quarry tile surface, a white new appearing grout line having no substantial build-up of soil residue. The floors obtain a clean, slip-free surface that is clean, sanitized, and has improved safety from slip and fall accidents.

Abstract: Enzyme compositions and methods employing enzyme compositions are disclosed which are useful for cleaning contact lenses. In one embodiment, a composition in accordance with the present invention comprises an enzyme component effective when released in a liquid medium to remove debris from a contact lens located in the liquid medium; and an activity regulating component effective when released in the liquid medium to deactivate the enzyme component located in the liquid medium. This composition is preferably structured so that the enzyme component is released in the liquid medium before the activity regulating component is so released. The period of time between the release of the enzyme component and the activity regulating component is sufficient to allow the enzyme component to effectively remove debris from a contact lens which is introduced into the liquid medium before or at the same time the enzyme component is released in the liquid medium.

Abstract: A method of uncoupling, cleaning, refurbishing, and reassembling electrical connectors which have been exposed to environmental hazards, particularly underwater operation, and a kit therefore.

Abstract: A process for treating disk-shaped workpieces with a liquid in a chamber which can be sealed in gas-tight manner, in which the workpieces stacked in a transport rack are brought into contact with the fed-in liquid in the closed chamber, the liquid is conducted away out of the chamber and noxious vapors or gases originating from the liquid are scrubbed out and are conducted away out of the chamber in the dissolved condition.

Abstract: An invention including an apparatus and process for generating small bubble foam using foam generating equipment in manufacturing processes such as benefication, flotation, flocculation, and for dust control in size reduction processes of a substrate, whereby a continuous, precise amount of a defactant is added to the treated substrate after introduction of the foam and processing of the substrate, in order to neutralize the residual small bubble foam so that the residual foam does not interfere in subsequent processes.

Abstract: An uncomplicated and easy to control process for forming patterns, wherein an active beam sensitive resin is exposed to an active beam such that a correctly formed pattern is produced on the resin. The process comprises the steps of forming a film of an active beam sensitive resin on a substrate, exposing the film to an active beam, and developing the exposed film with a developing solution comprising a weakly basic salt in a basic aqueous solution having a hydrogen ion concentration sufficient to finish the developing within a desired period of time and an ionic strength sufficient to prevent a substantial decrease in the thickness of the exposed film.

Abstract: Enzyme compositions and methods employing enzyme compositions are disclosed which are useful for cleaning contact lenses. In one embodiment, a composition in accordance with the present invention comprises an enzyme component effective when released in a liquid medium to remove debris from a contact lens located in the liquid medium; and an activity regulating component effective when released in the liquid medium to deactivate the enzyme component located in the liquid medium. This composition is preferably structured so that the enzyme component is released in the liquid medium before the activity regulating component is so released. The period of time between the release of the enzyme component and the activity regulating component is sufficient to allow the enzyme component to effectively remove debris from a contact lens which is introduced into the liquid medium before or at the same time the enzyme component is released in the liquid medium.

Abstract: Compositions and methods are provided for sterilizing hemodialysis apparatus, particularly for reprocessing dialyzers in a manner that minimizes membrane perforations. The compositions contain a protic acid and a metal chlorite, and have a pH of at least about 2.3 and no greater than 4.2. Methods of this invention include contacting both the blood side and the dialysate side of a dialysis membrane with the composition, followed by first displacing the composition on the dialysate side with water or an aqueous alkali buffer having a pH in excess of about 6.0, such that the pH of the composition on the blood side of the dialysis membrane increases to at least about 5.0. The composition on the blood side is then displaced with saline. In a further embodiment, the composition has a pH ranging from 3.3 to 4.2, and the amount of chlorite ion in the form of chlorous acid ranges from 0.5% to 5.0% by weight of the total amount of chlorite ion in the composition.

Abstract: Polyester and cellulosic contaminants are removed from the surfaces of polyolefins by contacting the polyolefins with an aqueous composition of alkali metal hydroxide and/or alkaline earth metal hydroxide; and with an oxidizing agent.