Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a supply line having a first open/close valve installed thereon and configured to supply a treating fluid to the treating space; a heater installed on the supply line and configured to heat the treating fluid; an exhaust line having a second open/close valve installed thereon and configured to exhaust the treating space; and, a controller configured to control the first open/close value and the second open/close valve such that the treating fluid heated is supplied to and exhausted from the treating space before a treating process is performed on a substrate in the treating space.

Abstract: There is provided a cleaning nozzle that cleans a cleaning target face that is one of a holding face that holds a workpiece and/or a surface of the workpiece held on the holding face. The cleaning nozzle includes an air nozzle having an jet port for jetting air toward the cleaning target face and extending in a direction parallel to the cleaning target face, and a suction nozzle having a suction port for sucking air on the cleaning target face and arranged adjacent to and in parallel to the air nozzle.

Abstract: A substrate processing apparatus includes: a substrate holder; a nozzle that ejects a processing liquid to the substrate; a conductive pipe that supplies the processing liquid to the nozzle; a ground line that connects the conductive pipe to a reference potential; a liquid receiver provided around the substrate holder and receives liquid ejected from the nozzle; and a deterioration degree measuring unit that measures a deterioration degree of conductivity of the conductive pipe. The deterioration degree measuring unit includes: a measurement liquid supply that supplies a measurement liquid to the conductive pipe; a potential difference imparting unit that imparts a potential difference between a liquid contact surface of the liquid receiver and the reference potential; and an ammeter that measures a current value of a current flowing through a charge moving path established via the measurement liquid between the liquid contact surface of the liquid receiver and the ground line.

Abstract: A wafer processing method of the present invention includes mounting a wafer part on a chuck table, loading the wafer part on the chuck table, spraying, by a spray arm module, a first processing solution onto the wafer part to process the wafer part, spraying, by the spray arm module, a second processing solution onto the wafer part to process the wafer part, drying the wafer part on the chuck table, and unloading the wafer part from the chuck table.

Abstract: The present disclosure provides a method for fabricating a thin film transistor substrate, which includes: sequentially depositing a light shielding layer pattern, a buffer layer, an active layer pattern, a gate insulating layer, and a gate layer; wet etching the gate layer to form a gate layer pattern with a photoresist; stripping off the photoresist; forming a protective layer covering the gate layer pattern; etching the gate insulating layer to form a gate insulating layer pattern; and metalizing a non-channel region of the active layer pattern. This method can ensure that an orthographic projection of the gate layer pattern on the substrate completely coincides with that of the gate insulating pattern. Therefore, the entire active layer pattern is regulated by the gate layer pattern, thereby improving a turn-on current of a thin film transistor.

Abstract: A pre-drying processing liquid containing a sublimable substance that changes to gas without passing through to a liquid and a solvent in which the sublimable substance dissolves is supplied to a front surface of a substrate on which a pattern has been formed. Thereafter, the solvent is evaporated from the pre-drying processing liquid on the front surface of the substrate to thereby form a solidified body containing the sublimable substance on the front surface of the substrate. Thereafter, the solidified body is sublimated and thereby removed from the front surface of the substrate. A value acquired by multiplying a ratio of the thickness of the solidified body to the height of the pattern by 100 is greater than 76 and less than 219.

Abstract: A method for recycling polyester from a polyester textile. The method comprises the steps of: providing said polyester textile soaked in a mixture comprising a solvent and a catalyst, providing and maintaining a temperature of said mixture comprising said polyester textile within a range of 80-240° C. during depolymerization of polyester in said polyester textile and wherein, in said step of providing said polyester textile soaked in said mixture, said catalyst of said mixture comprises calcium hydroxide. A catalyst may be used for depolymerization of polyester in a polyester textile, wherein the catalyst comprises calcium hydroxide. Natural fibers may b e recovered from a textile comprising polyester and natural fibers.

Abstract: A mask glue removing apparatus includes a first plate including a plurality of nozzles to be adjusted at independent dispensing angles of each other and a head in which the plurality of nozzles are installed and configured to move the head close to a position corresponding to a region of a mask in which glue is present, adjust the dispensing angles of the plurality of nozzles to face the region in which the glue is present, and dispense a chemical liquid, rinse, or air through the plurality of nozzles to remove the glue, and a second plate on which the mask is placed and configured to adjust a position of a main body according to a removal process for the glue.

Abstract: Provided are an apparatus and method for treating a substrate. Specifically, provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes: a housing providing a space for performing a process; a support member disposed in the housing to support a substrate; a supply port configured to supply a process fluid to the housing; a shield member disposed between the supply port and the support member to prevent the process fluid from being directly injected to the substrate; and an exhaust port configured to discharge the process fluid from the housing.

Abstract: The inventive concept provides an apparatus and method for removing a film formed on a substrate. A method for treating the substrate includes a primary solvent dispensing step of dispensing an organic solvent onto the substrate to remove a photoresist film on the substrate and an ozone dispensing step of dispensing a liquid containing ozone onto the substrate to remove organic residue on the substrate, after the primary solvent dispensing step.

Abstract: The present disclosure includes apparatuses and methods related to freezing a sacrificial material in forming a semiconductor. In an example, a method may include solidifying, via freezing, a sacrificial material in an opening of a structure, wherein the sacrificial material has a freezing point below a boiling point of a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to a particular temperature range.

Abstract: The invention concerns a process for treating a workpiece, preferably for shaping a workpiece by ablating material, by a liquid jet guided laser beam.

Abstract: An element chip cleaning method including: an element chip preparation step of preparing at least one element chip having a first surface and a second surface opposite the first surface, the first surface covered with a resin film; a first cleaning step of bringing a first cleaning liquid into contact with the resin film, the first cleaning liquid including a solvent that dissolves at least part of a resin component contained in the resin film; and a second cleaning step of spraying a second cleaning liquid against the resin film from the first surface side of the element chip, after the first cleaning step.

Abstract: A method for cleaning items to be cleaned is disclosed. A cleaning device is used that has at least one cleaning chamber and at least one applicator for applying at least one cleaning fluid to the items to be cleaned in the cleaning chamber. A desired hygiene value is prespecified. The method further includes time-resolved recording of at least two influencing variables which influence hygienization of the items to be cleaned. Hygiene share values are determined from the influencing variables using a prespecified relationship between each influencing variable and the respective hygiene value share of said influencing variable. An expected actual hygiene value at the end of the cleaning from the hygiene value shares is ascertained and compared with the desired hygiene value. At least one of the influencing variables is changed based on the comparison. An inventive cleaning device is also disclosed.

Abstract: The substrate processing method is a substrate processing method for removing a resist having a hardened layer from a substrate on a surface of which the resist is formed, including: a substrate holding step of holding the substrate; and a resist stripping step of stripping the resist from the surface of the substrate by supplying ozone gas and superheated steam to a plural-fluid nozzle for producing liquid drops through mixing a plurality of fluids to discharge mixed gas of ozone gas and superheated steam containing liquid drops of ozone water produced by mixing ozone gas and superheated steam from the plural-fluid nozzle toward the surface of the substrate.

Abstract: The invention relates to methods, compositions and kits for determining the cleanness of a surface. Described herein is a kit for determining the cleanness of a surface comprising an enzymatic solution comprising catalase; and a developer solution comprising hydrogen peroxide. Described also is a method for determining the cleanness of a surface comprising: applying on a zone of a surface to be cleaned an enzymatic solution comprising catalase and letting it dry; after cleaning said surface, applying on said zone a developer solution comprising hydrogen peroxide; and detecting a catalytic reaction between remaining catalase and hydrogen peroxide, wherein presence of a catalytic reaction is indicative of a surface not properly cleaned. Also provided are specific enzymatic solutions and developer solutions for the kits and methods.

Abstract: A system includes a processor and a memory. The memory stores instructions executable by the processor to detect an occlusion on a surface in a vehicle sensor optical path based on a segmentation of sensor image data, and to select a cleaning plan for the surface based on the detected occlusion, map data, and vehicle route data.

Abstract: An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment comprises a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, wherein the treatment film comprises an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate horizontally, a hydrophobic agent supplying step of supplying to an upper surface of the substrate a hydrophobic agent which is a liquid for hydrophobizing the upper surface of the substrate, a low surface-tension liquid supplying step of supplying the low surface-tension liquid to the upper surface of the substrate in order to replace the hydrophobic agent on the substrate by a low surface-tension liquid lower in surface tension than water, and a humidity adjusting step of adjusting humidity of the atmosphere in contact with a liquid film on the substrate such that the humidity of the atmosphere in contact with a liquid film on the substrate in the hydrophobic agent supplying step reaches a first humidity and the humidity of the atmosphere in contact with a liquid film on the substrate in the low surface-tension liquid supplying step reaches a second humidity which is humidity lower than the first humidity.

Abstract: In a substrate processing apparatus, a cup part is moved in an up-down direction to cause a cup exhaust port to selectively overlap a first chamber exhaust port or a second chamber exhaust port. In the state in which the cup exhaust port overlaps the first chamber exhaust port, gas in the cup part is discharged through the cup exhaust port and the first chamber exhaust port by a first exhaust mechanism. In the state in which the cup exhaust port overlaps the second chamber exhaust port, the gas in the cup part is discharged through the cup exhaust port and the second chamber exhaust port by a second exhaust mechanism. In this way, an exhaust mechanism for exhausting gas from the cup part can be easily switched between the first exhaust mechanism and the second exhaust mechanism.

Abstract: A liquid processing method can remove pure water existing within a pattern of a substrate and replace the pure water with a solvent rapidly. The liquid processing method of supplying the pure water onto the substrate, which is horizontally held and has the pattern formed on a surface thereof, and drying the substrate includes a pure water supplying process of supplying the pure water onto the surface of the substrate; a heated solvent supplying process of supplying, after the pure water supplying process, the solvent in a liquid state, which is heated to a temperature equal to or higher than a boiling point of water, onto the surface of the substrate on which the pure water exists; and a removing process of drying the substrate by removing the solvent form the surface of the substrate.

Abstract: A substrate processing method including a center portion discharging step of discharging a low-surface-tension liquid from a first low-surface-tension liquid nozzle disposed above a substrate toward the center portion of an upper surface, an inert gas supplying step of supplying inert gas to above the substrate in parallel with the center portion discharging step in order to form a gas flow flowing along the upper surface, and a peripheral edge portion discharging and supplying step of discharging the low-surface-tension liquid from a second low-surface-tension liquid nozzle disposed above the substrate toward a peripheral edge portion of the upper surface in parallel with the center portion discharging step and the inert gas supplying step.

Abstract: A system includes a computer programmed to actuate a first nozzle to emit air continuously at a camera, and actuate a second nozzle to simultaneously emit air intermittently at a precipitation sensor. The system may include a camera, a precipitation sensor coupled to the camera, the first nozzle aimed at the camera, the second nozzle aimed at the precipitation sensor, and the computer in communication with the first and second nozzles.

Abstract: An apparatus for drying of wet substrates in a post CMP cleaning apparatus is provided. The apparatus provides a waterfall or shallow reservoir of rinsing solution, such as DIW, through which a substrate may be lifted. A solvent vapor may be provided at the rinsing solution interface on the substrate, such as in a Marangoni process. In certain embodiments, the volume of solution through which the substrate is lifted is reduced, which may provide for reduced or eliminated particle reattachment to the substrate.

Abstract: The controller is programmed to cause a low-surface-tension liquid supply unit to supply a liquid film of a low-surface-tension liquid to a front surface of a substrate so as to form a liquid film of the low-surface-tension liquid. The controller is programmed to control the substrate rotating unit and the inert gas supply unit so that an inert gas is supplied toward the rotational center position while rotating the substrate, thereby forming an opening spreading from the rotational center position to be formed in the liquid film, and enlarging the opening in a direction away from the rotational center position, and to control the landing-position changing unit to change the landing position of the low-surface-tension liquid to at least two positions except the rotational center position in accordance with enlargement of the opening so that the landing position is placed outside the peripheral edge of the opening.

Abstract: A substrate treating method dries a substrate on a surface of which a predetermined pattern is formed. The substrate treating method includes: a washing step of washing the substrate by immersing the substrate into a washing liquid after the washing liquid is stored into the treating tank in a sealed chamber; a decompression step of decompressing an inside of the chamber; a lifting step of lifting the substrate from the washing liquid stored in the treating tank; a liquid discharge step of discharging the washing liquid from the treating tank; and a hydrophobing step of replacing an atmosphere in the chamber with a hydrophobic agent and performing a hydrophobing treatment on the surface of the substrate.

Abstract: A process of forming a semiconductor device primarily made of nitride semiconductor materials is disclosed. The process includes steps of: (a) growing a semiconductor stack including a channel layer and a barrier layer sequentially on a substrate, where the channel layer is made of gallium nitride (GaN); (b) patterning a mask on the barrier layer; (c) etching a portion of the barrier layer and a portion of the channel layer with the mask to form a recess in the semiconductor stack; and (d) growing a contact layer selectively within the recess with nitrogen (N2) used as a carrier gas at a maximum temperature of 1000° C.

Abstract: A second liquid film of the second processing liquid covers an upper surface of the first liquid film of the first processing liquid, on the upper surface of the substrate. In the substrate processing apparatus, extraneous matters on the upper surface of the substrate are removed from the upper surface of the substrate and moved toward the inside of the second liquid film by the first processing liquid which is vaporized between the second liquid film and the substrate by performing heating of the first liquid film at a temperature not lower than the boiling point of the first processing liquid and lower than the boiling point of the second processing liquid. It is thereby possible to suitably remove the extraneous matters from the substrate while suppressing any damage on the upper surface of the substrate.

Abstract: A liquid knife cleaning device is provided, and it includes a splash shield; a liquid knife, which is located under the splash shield; an oblique baffle, which is located between the splash shield and the liquid knife, and a lower side of which is fixedly bonded to the top of a blade of the liquid knife. The oblique baffle can act to isolate the liquid knife and the substrate on the delivery roll from a majority of water vapor, and droplets dripping on the oblique baffle can flow down along a slope of the oblique baffle, and will not drip on the substrate that has not been rinsed by the liquid knife. Effects of droplets on the uniformity of the substrate can be greatly reduced by the present technique, thereby enhancing the product quality.

Abstract: The inventive substrate treatment method includes: an organic solvent supplying step of supplying an organic solvent having a smaller surface tension than a rinse liquid to the upper surface of a substrate so that rinse liquid adhering to the upper surface of the substrate is replaced with the organic solvent; a higher temperature maintaining step of maintaining the upper surface of the substrate at a predetermined temperature higher than the boiling point of the organic solvent to thereby form a gas film of the organic solvent on the entire upper surface of the substrate including the gap of the minute pattern and to form a liquid film of the organic solvent on the gas film, the higher temperature maintaining step being performed after the organic solvent supplying step is started; and an organic solvent removing step of removing the organic solvent liquid film from the upper surface of the substrate.

Abstract: An edge bead removal apparatus is provided. The edge bead removal apparatus includes a clamping unit configured to clamp a cylindrical reticle and cause the cylindrical reticle to incline with a pre-determined angle and to rotate around a central axis. The edge bead removal apparatus also includes an edge bead removal solvent nozzle configured to spray an edge bead removal solvent to remove edge beads on both edges of the cylindrical reticle.

Abstract: An apparatus for drying of wet substrates in a post CMP cleaning apparatus is provided. The apparatus provides a waterfall or shallow reservoir of rinsing solution, such as DIW, through which a substrate may be lifted. A solvent vapor may be provided at the rinsing solution interface on the substrate, such as in a Marangoni process. In certain embodiments, the volume of solution through which the substrate is lifted is reduced, which may provide for reduced or eliminated particle reattachment to the substrate.

Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

Abstract: In one embodiment, a method for cleaning a showerhead electrode my include sealing a showerhead electrode within a cleaning assembly such that a first cleaning volume is formed on a first side of the showerhead electrode and a second cleaning volume is formed on a second side of the showerhead electrode. An acidic solution can be loaded into the first cleaning volume on the first side of the showerhead electrode. The first cleaning volume on the first side of the showerhead electrode can be pressurized such that at least a portion of the acidic solution flows through one or more of the plurality of gas passages of the showerhead electrode. An amount of purified water can be propelled through the second cleaning volume on the second side of the showerhead electrode, and into contact with the second side of the showerhead electrode.

Abstract: A developing method including a developing step in which, while a wafer horizontally held by a spin chuck is being rotated, the wafer is developed by supplying a developer onto a surface of the wafer, wherein provided before the developing step is a pre-wetting step in which, simultaneously with the developer being supplied from a first nozzle that is located on a position near a central part of the surface of the rotating wafer, a deionized water as a second liquid is supplied from a second nozzle that is located on a position nearer to an outer peripheral part of the wafer than the first nozzle, to thereby spread out the developer in the rotating direction of the wafer by a wall that is formed by the deionized water flowing to the outer peripheral side of the wafer with the rotation of the wafer.

Abstract: An immersion lithography apparatus includes (i) an optical assembly including an optical element, and configured to project a beam onto a substrate through an immersion liquid; (ii) a containment member that surrounds a path of the beam; and (iii) a stage on which the substrate is held, the substrate on the stage being moved below and spaced from a bottom surface of the containment member. The containment member includes: (1) a nozzle outlet via which water as the immersion liquid is released, (2) a recovery channel via which the immersion liquid is recovered from a gap between the containment member and the substrate and/or the stage, and (3) a fluid channel via which water is released to the gap between the containment member and the substrate and/or the stage, the fluid channel being provided radially inward of the recovery channel.

Abstract: An electroplating/etch apparatus including a fluid jet and a dryer present over the tank containing the electrolyte for the electroplating/etch process. The fluid jet and the dryer remove excess liquids, such as electrolyte, from the component being plated or etched, e.g., working electrode. The working electrode is present on a holder that traverses from a first position within the tank during a plating or etch operation to a second position that is outside the containing the plating electrolyte. The fluid jet rinses the working electrode when the holder is in the second position, and the forced air dryer blows any remaining fluid from the fluid jet and the electrolyte from the working electrode into the tank.

Abstract: Embodiments of the disclosure generally relate to methods of removing etch by-products from the plasma processing chamber using carbon monoxide or carbon dioxide. In one embodiment, a method for dry cleaning a processing chamber includes exposing a chamber component disposed within the processing chamber in absence of a substrate disposed therein to a first cleaning gas mixture comprising carbon monoxide or carbon dioxide, wherein a portion of the chamber component has a film layer or residues deposited thereon, and the film layer or residues comprises a refractory metal and/or a metal silicide.

Abstract: A substrate rotates, and a liquid nozzle of a gas/liquid supply nozzle moves to a position above the center of the rotating substrate. In this state, a rinse liquid is discharged from the liquid nozzle onto the rotating substrate. The gas/liquid supply nozzle moves toward a position outside the substrate. A gas nozzle reaches the position above the center of the rotating substrate, so that the gas/liquid supply nozzle temporarily stops. With the gas/liquid supply nozzle stopping, an inert gas is discharged onto the center of the rotating substrate for a given period of time. After that, the gas/liquid supply nozzle again moves toward the position outside the substrate.

Abstract: The present disclosure relates to a wafer cleaning module for post CMP processes that reduces defects (e.g., watermarks, deposited particles) on a substrate, and an associated method. In some embodiments, the wafer cleaning module has a cleaning tank that may receive a semiconductor substrate within a cleaning medium. A pusher is may vertically move the semiconductor substrate from a starting position within the cleaning tank to an ending position. A position sensor may determine a position of the semiconductor substrate relative to a meniscus of the cleaning medium. Based upon the determined position, a control unit is may adjust a location of the starting position to a predetermined distance below the meniscus.

Abstract: An ice dispensing system includes an ice hopper structure including a plurality of walls having inner surfaces that define an inner volume storing ice therein. The ice hopper may include a drain. A cleaning structure is coupled to the ice hopper structure. The cleaning structure includes a pump linked to a spray mechanism positioned within the inner volume of the ice hopper structure. The spray mechanism disperses a liquid on an inner surface of the ice hopper structure during a cleaning cycle of the ice dispensing mechanism.

Abstract: The present invention discloses a cleaning process, utilizing a gas flow to an interior of a hollow object in a fluid ambient. After capping the object to seal off the interior volume, gas is introduced to the object interior. The pressure is built up within the object interior, loosening the seal. The gas pressure is released, and the seal returns. The vibration caused by the cycling of gas pressure can be used to perform cleaning of particles adhering to the object. The cleaning process can be used in a combinatorial processing system, enabling in-situ cleaning of process reactor assemblies.

Abstract: Disclosed are methods and apparatus for cleaning heat exchangers and similar vessels by introducing chemical cleaning solutions and/or solvents while maintaining a target temperature range by direct steam injection into the cleaning solution. The steam may be injected directly into the heat exchanger or into a temporary side stream loop for recirculating the cleaning solution or admixed with fluids being injected to the heat exchanger. The disclosed methods are suitable for removing metallic oxides from a heat exchanger under chemically reducing conditions or metallic species such as copper under chemically oxidizing conditions. In order to further enhance the heat transfer efficiency of heating cleaning solvents by direct steam injection, mixing on the secondary side of the heat exchanger can be enhanced by gas sparging or by transferring liquid between heat exchangers when more than one heat exchanger is being cleaned at the same time.

Abstract: A substrate processing apparatus and method includes, a plate that has a size equal to or larger than a principal face of the substrate, and has a horizontal and flat liquid holding face opposing the principal face of the substrate from below. A processing liquid supply unit supplies a processing liquid to the liquid holding face. A control unit controls the processing liquid supply unit and a movement unit to supply the processing liquid to the liquid holding face to form a processing liquid film, a contact step of bringing the principal face of the substrate and the liquid holding face close to each other to bring the principal face of the substrate into contact with the processing liquid film, and a liquid contact maintenance step of maintaining the processing liquid in contact with the principal face of the substrate.

Abstract: A method of washing a bulk container is provided. The method includes receiving the bulk container on a support surface and rotating the support surface and at least one washer arm relative to one another. The method further includes spraying a fluid from at least one nozzle disposed on the at least one washer arm. Rotating the support surface and the at least one washer arm relative to one another exposes a plurality of portions of an outer surface of the bulk container to the spray.

Abstract: A substrate cleaning method that includes: a step in which, while a substrate holder is being continuously rotated, a to-be-discharged position of the cleaning liquid on the substrate is changed to an eccentric position deviated from the central part of the substrate, and a gas is discharged from a gas nozzle to the central part of the substrate so as to form a dried area of the cleaning liquid under a condition in which a shortest distance between an edge of a cleaning liquid flow output from the cleaning-liquid nozzle and an edge of a gas flow output from the gas nozzle is set between 9 mm and 15 mm.

Abstract: A system and a method for cleaning a printing cylinder or other printing equipment such as printing plates, ink pans or floors of printing units, the method comprising applying a detergent to the surface to be cleaned, after a period to allow action of the detergent, removing the detergent by rinsing, using a vapor and high velocity air stream, i.e. atomized water fog; or steam; or a combination of steam and air, which allows dislodging particles encrusted within cells of the surface of the piece of equipment to be cleaned.

Abstract: The present invention discloses a method of reducing contamination in a CVD chamber. The method comprises cleaning the CVD chamber with first cleaning gases containing NF3; removing the particles in the CVD chamber with second cleaning gases containing N2; further removing the particles in the CVD chamber with third cleaning gases containing O2; and seasoning an amorphous carbon layer with mixed gases containing C2H2 and an inert gas.

Abstract: A method and device for processing wafer-shaped articles comprises a closed process chamber. A rotary chuck is located within the process chamber, and is adapted to hold a wafer shaped article thereon. An interior fluid distribution ring is positioned above the rotary chuck, and comprises an annular surface inclined downwardly from a radially inner edge to a radially outer edge thereof. At least one fluid distribution nozzle extends into the closed process chamber and is positioned so as to discharge fluid onto the annular surface of the fluid distribution ring.

Abstract: Drying a microelectronic topography. At least some of the illustrative embodiments are methods that include placing a microelectronic topography inside a process chamber, providing a non-aqueous liquid to the process chamber until at least 90% of the volume of the process chamber contains the non-aqueous liquid, pressurizing the process chamber by way of a fluid different than the non-aqueous liquid, ceasing activity with respect to the process chamber until the non-aqueous liquid and fluid form a mixture that is substantially homogenous, venting the process chamber while simultaneously providing the fluid to the process chamber, and venting the process chamber in a manner which prevents formation of liquid in the process chamber.