Abstract: A hyperbaric cyclic nucleation transport (H-CNX) process is disclosed, including pressure cycling liquid and/or vapor from pressure higher than atmospheric pressure or vapor across the boiling point of the liquid. The higher pressure can be accompanied by higher temperature, which provides additional benefits of more efficient cleaning and cheaper liquid medium.

Abstract: Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.

Abstract: A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.

Abstract: A method is provided for cleaning at least a part of a water-steam circuit of a power plant. The method includes introducing a cleaning solution into the part requiring to be cleaned and subsequently draining off the cleaning solution. While the cleaning solution is being drained off or immediately thereafter, steam for flushing is injected via a steam injection device into the part requiring to be cleaned at at least one high point of the part requiring to be cleaned and low-point drains are opened or remain open in the part requiring to be cleaned and steam continues to be injected until steam emerges from the low-point drains and those low-point drains from which steam emerges are closed, and steam continues to be injected until steam has emerged from all low-point drains, upon which the steam injection device is closed and all low-point drains are reopened.

Abstract: A chemical liquid process is performed on a substrate. Then, a rinse process that supplies a rinse liquid to the substrate is performed. Thereafter, a drying process that dries the substrate is performed while rotating the substrate. The drying process includes a first drying process that rotates the substrate at a first rotational speed; a second drying process that decreases the rotational speed of the substrate to a second rotational speed lower than the first rotational speed after the first drying process. In the second drying process, the rinse liquid and a drying solution are agitated and substituted while generating braking effect. In a third drying process, the rotational speed of the substrate is increased from the second rotational speed to a third rotational speed after the second drying process. Thereafter, in a fourth drying process, the drying solution on the substrate is scattered away by rotating the substrate.

Abstract: Spray apparatus including an air heater and mixer for mixing a liquid, typically a disinfectant or a cleaning agent, into the air stream created by the air heater. The spray apparatus can be provided on a carrier back frame or on a cart.

Abstract: A method and device for processing wafer-shaped articles comprises a closed process chamber. A rotary chuck is located within the process chamber, and is adapted to hold a wafer shaped article thereon. An interior fluid distribution ring is positioned above the rotary chuck, and comprises an annular surface inclined downwardly from a radially inner edge to a radially outer edge thereof. At least one fluid distribution nozzle extends into the closed process chamber and is positioned so as to discharge fluid onto the annular surface of the fluid distribution ring.

Abstract: Methods for cleaning a substrate are provided. One such method includes receiving the substrate into a cleaning module and flowing an inert gas into the cleaning module. The flowing of the inert gas includes flowing the inert gas into an inlet defined within a top surface of the cleaning module and modifying a direction of the flowing inert gas to flow radially along the top surface of the cleaning module. Concurrent with or after initiating the flowing of the inert gas, a cleaning chemistry is introduced onto a surface of the substrate. The cleaning chemistry is at a temperature elevated from an ambient temperature. The dispensing of the cleaning chemistry is terminated and the flowing of the inert gas is terminated either concurrent with or after termination of the dispensing of the cleaning chemistry. The substrate is dried after the termination of the flowing of the inert gas.

Abstract: The present invention provides a substrate processing system in which a processing liquid is supplied to a substrate W from a processing nozzle 50a situated above the substrate W so as to process the substrate W, and which makes it possible to prevent unintended dripping of the processing liquid from the processing nozzle. A substrate processing system 20 comprises a processing nozzle 50a capable of supplying a processing liquid to a substrate to be processed, an arm 54 supporting the processing nozzle, and droplet removing nozzles 60, 62 capable of blowing a gas to the processing nozzle. The arm is movable between a processing position and a waiting position, the processing nozzle being above a substrate when the arm is in the waiting position and being outside a substrate when the arm is in the processing position. The droplet removing nozzles are so situated that they are in the vicinity of the processing nozzle when the arm is in the waiting position.

Abstract: A conveyor dishwasher (2) has a control apparatus (50) for automatically setting the quantity of final rinse liquid sprayed in the final rinse zone (18) per unit time as a function of the conveying speed and/or as a function of the type of washware conveyed through the final rinse zone (18). A rinse aid metering apparatus (57) is also provided which is designed to add in a metered fashion a constant quantity of rinse aid per unit time to the fresh water provided for final rinsing purposes independently of the quantity of final rinse liquid sprayed in the final rinse zone (18) per unit time.

Abstract: A liquid processing apparatus of the present disclosure includes a rotatable substrate holder that holds a wafer from above, and a top plate nozzle that supplies at least rinse liquid to the wafer and is provided in the rotation center of the substrate holder. The top plate nozzle is movably configured with the substrate holder in the top-bottom direction, and the rinse liquid is supplied to the wafer from the top plate nozzle while the top plate nozzle is spaced from the substrate holder. When the top plate nozzle approaches to the substrate holder, the rinse liquid is supplied to the lower surface of the substrate holder from the top plate nozzle to clean the lower surface of the substrate holder.

Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber, and removing a deposit from at least a portion of an inside of the process chamber after forming the film, wherein removing the deposit includes performing a cycle a predetermined number of times, the cycle including a first process of supplying a first gas for etching the deposit into the process chamber and a second process of supplying a second gas into the process chamber so as to increase a pressure in the process chamber, the second gas being incapable of etching a member constituting the process chamber or having an etchability against the member lower than that of the first gas.

Abstract: Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for gate structure fabrication process in semiconductor devices. In one embodiment, a method for in-situ chamber dry clean includes supplying a first cleaning gas including at least a boron containing gas into a processing chamber in absence of a substrate disposed therein, supplying a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate, and supplying a third cleaning gas including at least an oxygen containing gas into the processing chamber in absence of the substrate.

Abstract: Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.

Abstract: The invention relates to a method for removing at least part of at least one layer of a composite coating that is formed of fibers and at least one resin that is present on the surface of the body of a gas cartridge. In said method, at least one liquid nitrogen stream is dispensed at a temperature less than ?100 DEG C at a pressure of at least 00 bars upon contact with said coating so as to remove at least part of said coating layer present on the body of the gas cartridge.

Abstract: Dishwashers and methods of control for operation of dishwashers are disclosed. The operation of the dishwasher can include a drying cycle which uses a steam generator to supply steam to heat a washing compartment. The steam can evaporate moisture on the dishes in the washing compartment. When a condition of the dishwasher is met, such as a temperature or operation time meeting a preset value, an exhaust fan may exhaust air from inside the washing compartment. The operation of the dishwasher can improve power consumption and dry dishes more efficiently.

Abstract: A method for cleaning the surface of a silicon substrate, covered by a layer of silicon oxide includes: a) exposing the surface for 60 to 900 seconds to a radiofrequency plasma, generated from a fluorinated gas, to strip the silicon oxide layer and induce the adsorption of fluorinated elements on the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the fluorinated gas pressure being 10 mTorrs to 200 mTorrs, and the substrate temperature being lower than or equal to 300° C.; and b) exposing the surface including the fluorinated elements for 5 to 120 seconds to a hydrogen radiofrequency plasma, to remove the fluorinated elements from the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the hydrogen pressure being 10 mTorrs to 1 Torr, and the substrate temperature being lower than or equal to 300° C.

Abstract: A substrate cleaning method for cleaning a substrate on which a film is formed with a pattern in a vacuum-state processing chamber includes a preprocessing step where the film formed on the substrate on which the pattern has been formed by an etching process is cleaned by using a cleaning gas; and a consecutive step including an oxidation step where residues attached on a surface of the pattern are oxidized by using an oxidizing gas and a reduction step where the oxidized residues are reduced by using a reducing gas, which are consecutively carried out posterior to the preprocessing step. The gases used in the preprocessing step and the consecutive step are clustered by ejecting the gases into the processing chamber from a gas nozzle whose internal pressure PS is maintained to be higher than an internal pressure PO of the processing chamber.

Abstract: When the inner surface of containers conveyed in an inverted posture is sterilized, the sterilization efficiency can be increased, the amount of sterilizing fluid used can be reduced, the sterilization time and washing time can be shortened, the number of drive components of the apparatus can be reduced and the apparatus can be simplified and reduced in cost. A non-inserted nozzle 20 is disposed at a distance of 1-50 mm below the lower end surface 52 of a mouth of a container conveyed in an inverted posture, the sterilizing fluid is mixed with air and the sterilizing fluid is atomized and sprayed intermittently from the non-inserted nozzle toward the inside of the container.

Abstract: A vacuum processing apparatus includes a vacuum chamber for performing a plasma process and a cleaning process unit for performing a cleaning process to apply a plasma process to a wafer on which a single layer or a laminated film containing a metallic film is formed by using a corrosive gas, and a control unit having a sequence to abort the plasma process when an abnormality occurs in the vacuum chamber and transfer the wafer subjecting to the aborting of the plasma process to the cleaning process unit, after elapsing a predetermined time, to perform the cleaning process.

Abstract: According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

Abstract: Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another.

Abstract: In the exemplary embodiment, a steam-cleaning apparatus is described for sanitizing and cleaning a surface or object. The apparatus has a first reservoir for receiving water, a heater for heating the water within the first reservoir, a second reservoir for receiving a sanitizing agent, a mixing nozzle, a first actuator for enabling the heated water from the first reservoir through the mixing nozzle at the surface or object for cleaning the surface or object; and a second actuator for enabling the sanitizing agent from the second reservoir to the mixing nozzle for mixing the sanitizing agent with the heated water therein, and for enabling the mixed heated water and sanitizing agent at the surface or object for sanitizing the surface or object deeply into its finest fissures and pores.

Abstract: A process is provided for removing polymeric fouling on process equipment surfaces to restore the efficiency of such equipment. This is accomplished by contacting the fouled equipment with a solvent comprising at least one non-aromatic hydrocarbon compound, or a mixture of one or more non-aromatic organic compounds and one or more aromatic hydrocarbon compounds, for a period of time sufficient to remove the polymeric fouling.

Abstract: A method for evaluating a cleanliness of a tool, the method includes: receiving a wafer; cleaning the wafer; placing the wafer into the tool for a predefined period; removing the wafer from the tool, performing a contact angle measurement and determining the cleanliness of the wafer.

Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Abstract: A method of removing photoresist beneath an overlayer includes estimating a rapid temperature change for a photoresist layer to produce cracking in the overlayer. The temperature chance is estimated so that the cracking of the overlayer is sufficient to allow a liftoff solution to penetrate below the overlayer during a liftoff step. The method further includes baking the photoresist layer and chilling the photoresist layer after baking to produce the rapid temperature change. The method then includes lifting off the photoresist layer using the liftoff solution.

Abstract: A top plate 32 is provided to be moved in a horizontal direction between an advanced position, in which the top plate 32 covers from above a substrate W held by a substrate holding unit 21, and a retracted position that is retracted from the advanced position. An air hood 70 configured to supply a purified gas downward is provided to be lifted between a lower position, in which the air hood covers from above the substrate W held by the substrate holding unit 21, and an upper position located above the lower position.

Abstract: A process for removing carbonaceous deposits on surfaces of catalysts and plant parts by treating the deposits with a superheated stream of steam admixed at least temporarily with an oxygenous gas is provided, which involves, in each case monitoring the offgas CO2 content after condensation of the steam, at a temperature of at least 300° C.: (a) treating the carbonaceous deposits with superheated steam at a temperature of at least 300° C. until the CO2 content of the offgas has exceeded a maximum; (b) then, with further supply of superheated steam, commencing oxygen supply, the amount of oxygen supplied being adjusted such that the CO2 content in the offgas decreases further until it has fallen to a value of <1% by volume; and then (c) ending the supply of superheated steam and passing an oxygenous gas over remaining amounts of carbonaceous deposits until the deposits have been virtually removed.

Abstract: A substrate processing apparatus and a substrate processing method are capable of restraining or preventing the generation of streaky particles on a substrate surface by excellent removal of a rinsing liquid therefrom. The substrate processing apparatus has a substrate inclining mechanism for inclining a substrate held by a substrate holding mechanism. After a rinsing liquid has been supplied onto a substrate to form a liquid mass, the substrate is inclined at a small angle by the substrate inclining mechanism. Then, the liquid mass is downwardly moved without being fragmented and then falls down without leaving minute droplets on the substrate top. Thereafter, the substrate is returned to a horizontal posture and then dried.

Abstract: A resist removal apparatus and method are effective in removing a resist without oxidizing the substrate material other than the resist. The resist removal apparatus, which removes resist from a wafer on which a resist film has been formed, includes a cluster spraying unit which sprays a wafer with clusters each of which is formed of a plurality of organic solvent molecules agglomerated together.

Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

Abstract: In one aspect, a substrate processing apparatus is provided. The apparatus comprises a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid; an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate; and a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife. Numerous other aspects are provided.

Abstract: Provided are a liquid processing apparatus and a liquid processing method that can optimize the state of air flow at an upper side of a substrate according to each liquid process performed during a substrate liquid processing. A liquid processing apparatus for performing a substrate liquid processing includes a support member configured to horizontally supporting the substrate; a gap forming member configured to form an annular gap between the gap forming member and an outer circumferential part of the support member; an upper liquid supplying member configured to supply a processing liquid to the substrate from an upper side; a cup configured to surround the annular gap and receive the processing liquid swept away from the rotating substrate through the annular gap; and an elevating mechanism configured to elevate the gap forming member.

Abstract: An apparatus for treating waste comprises a gravity drop steam heating tower for heating the waste to the biological kill temperature using pressurized steam, a first feed member for feeding the waste to be sterilized to the gravity drop steam heating tower, and a vaporization system. The vaporization system includes a heating chamber for facilitating vaporization of liquids in the waste, a conveying member for conveying the waste from the lower end portion of the gravity drop steam heating tower into and through the heating chamber, and a vaporization chamber for receiving the waste from the heating chamber and for releasing vapor entrained in the waste into the vaporization chamber.

Abstract: A method for processing a substrate is provided. The method includes generating a controlled meniscus using a proximity head. The proximity head has a face in close proximity to a surface of the substrate, and the face includes a substantially flat surface. The controlled meniscus is generated by delivering a chemical to the meniscus through discrete nozzles formed in the face of the proximity head. The method includes moving the proximity head over the substrate so that an area of contact between the meniscus and the surface of the substrate moves from a first location to a second location on the substrate. The moving of the proximity head causes a chemical remainder to be left behind on the surface of the substrate at the first location. The chemical remainder being a layer of the chemical from the meniscus that adheres to the surface of the substrate.

Abstract: A method for fabricating semiconductor devices includes providing a semiconductor substrate having a surface region containing one or more contaminants and having an overlying oxide layer. In an embodiment, the one or more contaminants are at least a carbon species. The method includes processing the surface region using at least a wet processing process to selectively remove the overlying oxide layer and expose the surface region including the one or more contaminants. The method includes subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants. The method includes removing the high energy electromagnetic radiation to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second.

Abstract: There is provided a storage water of a silicon wafer wherein a liquid temperature of the storage water is 0 to 18° C. And there is provided a shower water of a silicon wafer wherein a liquid temperature of the shower water is 0 to 18° C. The wafer is stored in the storage water, and showered using the shower water. The present invention also relates to a method for storing silicon wafer wherein the silicon wafer is showered using a shower water of which liquid temperature is 0 to 18° C., and is then stored in liquid using a storage water of which liquid temperature is 0 to 18° C. Thereby, there can be provided a water for storing a silicon wafer, a method for storing it, a water for showering it and a method for showering it wherein degradation of the wafer quality can be prevented.

Abstract: A substrate processing method includes: supplying a fluid to a resist on a substrate after an ion implantation in which the resist is used as a mask; and supplying a stripping liquid to the resist for stripping the resist after the supplying the fluid. A cured layer is formed in a surface of the resist in the ion implantation. The fluid is purified water or a mixed fluid of purified water and an inert gas. A volume flow rate of the purified water is not less than 1/400 of a volume flow rate of the inert gas when the mixed fluid is supplied as the fluid.

Abstract: A megasonic cleaning method and a megasonic cleaning apparatus are provided. Microcavitation bubbles may be formed by applying an electromotive force to a cleaning solution using a megasonic energy in a separate room from an object to be cleaned. The microcavitation bubbles having a stable oscillation among the formed microcavitation bubbles may be moved to the object to be cleaned. A surface of the object to be cleaned may be cleaned using the microcavitation bubbles having the stable oscillation. Particles attached onto the surface of the object to be cleaned may be effectively removed while preventing pattern damage.

Abstract: A surface of a substrate can be dried cleanly after liquid-processed by a liquid processing method and a liquid processing apparatus. The liquid processing method includes forming a liquid film of a rinse solution on an entire surface of a substrate having thereon a hydrophobic region by supplying, onto a central portion of the surface of the substrate, the rinse solution for rinsing a chemical liquid supplied on the substrate at a first flow rate while rotating the substrate at a first rotation speed; forming a stripe-shaped flow of the rinse solution on the surface of the substrate by breaking the liquid film formed on the entire surface of the substrate; and moving a discharge unit configured to supply the rinse solution toward a periphery of the substrate until the stripe-shaped flow of the rinse solution is moved outside the surface of the substrate.

Abstract: A method of making a syringe assembly includes providing a first syringe component defining a first sliding surface that is substantially free of lubricant. The first sliding surface is contacted with water. The first sliding surface and the water in contact with the first sliding surface are heated at a temperature of at least 121° C. The first sliding surface is dried.

Abstract: A pre-assembled orthopaedic implant adapted for improved gas sterilization. The implant includes a first component adapted for assembly with a second component such that a mating surface of the first component is in close proximity with a mating surface of the second component. At least one gas conduit associated with the mating surface of the first component facilitates a sterilizing gas to penetrate into and dissipate from the interface defined by the mating surfaces.

Abstract: A steam generation system comprises: an oxygenated water treatment (OWT) sub-system configured to generate water having oxidizing chemistry; a steam generation sub-system configured to convert the water having oxidizing chemistry into steam having oxidizing chemistry; an attemperator or other injection device or devices configured to add an oxygen scavenger to the steam having oxidizing chemistry to generate steam having less oxidizing or reducing chemistry; and a condenser configured to condense the steam having less oxidizing or reducing chemistry into condensed water.

Abstract: The present invention relates to a wafer cleaning and a wafer bonding method using the same that can improve a yield of cleaning process and bonding property in bonding the cleaned wafer by cleaning the wafer using atmospheric pressure plasma and cleaning solution. The wafer cleaning method includes the steps of providing a process chamber with a wafer whose bonding surface faces upward, cleaning and surface-treating the bonding surface of the wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the wafer, and withdrawing out the wafer from the process chamber.

Abstract: A method for removing a hardened photoresist from a semiconductor substrate. An example method for removing a hardened photoresist layer from a substrate comprising a low-? dielectric material preserving the characteristics of the low-?dielectric material includes: a)—providing a substrate comprising a hardened photoresist layer and a low-? dielectric material at least partially exposed; b)—forming C?C double bonds in the hardened photoresist by exposing the hardened photoresist to UV radiation having a wavelength between 200 nm and 300 nm in vacuum or in an inert atmosphere; c)—breaking the C?C double bonds formed in step b) by reacting the hardened photoresist with ozone (O3) or a mixture of ozone (O3) and oxygen (O2) thereby fragmenting the hardened photoresist; and d)—removing the fragmented photoresist obtained in step c) by wet processing with cleaning chemistries.

Abstract: A method for cleaning a diffusion barrier over a gate dielectric of a metal-gate transistor over a substrate is provided. The method includes cleaning the diffusion barrier with a first solution including at least one surfactant. The amount of the surfactant of the first solution is about a critical micelle concentration (CMC) or more. The diffusion barrier is cleaned with a second solution. The second solution has a physical force to remove particles over the diffusion barrier. The second solution is substantially free from interacting with the diffusion barrier.

Abstract: A method for cleaning cavities in workpieces, a cleaning device for this purpose and a device for the supply of media to a cleaning device of this type. Supercritical carbon dioxide is introduced into the cavity and the cavity is rinsed. The supercritical carbon dioxide located in the cavity is relieved of pressure after rinsing of the cavity, so that carbon dioxide gas and carbon dioxide snow are formed in the cavity and subsequently driven out of the cavity.

Abstract: Pyrolysis methods for disassociating an organic mass, or coating from an article, by placing the article in an air tight processing chamber, circulating a gaseous mixture of ambient air and at least 40% water vapor from an opening, through the processing chamber and out of an exhaust port, and maintaining the processing chamber at a temperature above 650 degrees Fahrenheit for a sufficient time to disassociate the organic material. A batch oven and a continuous processing oven including entrance and exit air closures that utilize the pyrolysis methods are described.

Abstract: A liquid treatment method including: retaining a substrate with a treatment target surface being set as a lower surface, and rotating the substrate; supplying DIW (deionized water) to the lower surface of the substrate, thereby performing a rinsing process to the substrate; and thereafter supplying a mist containing IPA (isopropyl alcohol) and N2 gas, thereby substituting the IPA for the DIW. The supplying of the mist is performed using a nozzle positioned below the substrate, the nozzle comprising a plurality of ejection ports which are arrayed between a position opposing a central portion of the substrate and a position opposing a peripheral portion of the substrate.