Abstract: Apparatus and methods are disclosed for cleaning interiors of passageways in endoscopes or other luminal medical devices by flow of liquid and gas therethrough. The liquid flow may include rivulets, droplets or other liquid entities which move on the internal surfaces of the passageways, and may include a three-phase contact interface between liquid and dry solid and gas.

Abstract: A bicycle sprocket chain cleaning and lubrication apparatus allows a sprocket chain (3) to be cleaned while still mounted on the bicycle. The apparatus includes a includes a housing (10) for enclosing the sprocket chain on all sides consisting of mutually connectable upper half-shell (11) and lower half-shell (12) portions and a securement assembly which includes a mounting plate adapted to attach to a rear wheel quick disconnect of the bicycle. The housing is suspended from the sprocket chain and provides a funnel shaped solvent hopper (17), a hose connection (21) to a compressed air supply, and an air knife (23) adapted to direct high velocity air to impinge upon and thereby dry the sprocket chain.

Abstract: Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member.

Abstract: A dishwasher machine (1), in particular a domestic dishwasher machine, is described, comprising a washing container (2) and devices for washing items to be washed by means of washing solution, as well as a sound wave generator (5), wherein the sound wave generator (5) is used to generate a sound wave which at least assists the drying process of the items to be washed. In order to achieve the highest possible efficiency of the drying process, the sound wave generator (5) is designed to deliver sound waves of different frequency and/or amplitude.

Abstract: A foreign matter removal method that removes foreign matter attached to a surface of a substrate having been subjected to predetermined processing. An edge of a rotating substrate mounted on a mounting stage is irradiated with misalignment measurement laser light. The misalignment measurement laser light other than the laser light blocked by the edge of the substrate is received, and power thereof is detected. The amount of misalignment of the substrate is calculated based on the detected power of the misalignment measurement laser light and a detected rotation angle of the rotating substrate. The misalignment of the substrate is corrected for based on the calculated amount of misalignment. After that, foreign matter removal laser light is irradiated, and a process gas that is to react with the foreign matter is jetted to the edge of the substrate. Consequently, the foreign matter attached to the substrate is decomposed and removed.

Abstract: Disclosed herein is a method and treatment system for rapid cleaning and protecting of automotive cooling systems containing controlled atmosphere brazed aluminum heat exchangers. The method and treatment system can optionally include a conditioning (passivating) step. The treatment system can comprise three different parts: (1) cleaner or cleaning solution; (2) conditioner or conditioning solution; and (3) compatible CAB aluminum protective heat transfer fluid.

Abstract: A method of extending storage time prior to cleaning a component of a plasma chamber is provided. The method comprises removing the component from the chamber, covering a thermal spray coating on the component while the surface is exposed to atmospheric air, storing the component, optionally removing the covering, and optionally wet cleaning reaction by-products from the thermal spray coating. Alternatively, instead of, or in addition to covering a thermal spray coating on the component, the component can be placed into a desiccator or dry-box.

Abstract: Embodiments of the current invention describe a cleaning solution for the removal of high dose implanted photoresist, along with methods of applying the cleaning solution to remove the high dose implanted photoresist and combinatorially developing the cleaning solution.

Abstract: Embodiments of the present invention generally relate to an apparatus and methods for rinsing and drying substrates. One embodiment provides an end effector comprising a body having a contact tip for contacting an edge area of a substrate, wherein the end effector is configured to support the substrate while the substrate is in a rinsing bath and while the substrate is being dried from the rinsing bath, and the contact tip comprises a hydrophilic material.

Abstract: Methods and apparatus for creating and controlling transient cavitation are disclosed. An example method includes selecting a range of bubble sizes to be created in a liquid and selecting characteristics for an acoustic field to be applied to the liquid. The method further includes creating gas bubbles of the selected range of bubble sizes in the liquid, creating an acoustic field with the selected characteristics and subjecting the liquid to the acoustic field. In the example method, at least one of the range of bubble sizes and the characteristics of the acoustic field is selected in correspondence with the other so as to control transient cavitation in the liquid for the selected range of bubble sizes. Particularly, the methods and apparatus may be used for the cleaning of a surface, such as a semiconductor substrate.

Abstract: The present invention relates to the use of at least one alkanesulfonic acid of formula R—SO3H, in which R represents a saturated, linear or branched, hydrocarbon chain containing 1 to 4 carbon atoms, as agent for cleaning cement, mortar, concrete, lime, laitance and other derived products. The invention also relates to a method of cleaning cement, mortar, concrete, lime, laitance and other derived products using at least one alkanesulfonic acid.

Abstract: Disclosed is a substrate cleaning method for prevent damage to a pattern formed on a substrate. The substrate cleaning method includes cleaning the substrate by striking cleaning particulates carried in a flow of dry air or inert gas against a surface of the substrate, and removing the cleaning particulates.

Abstract: The present invention is a method, process and apparatus for selective cleaning, drying, and modifying substrate surfaces and depositing thin films thereon using a dense phase gas solvent and admixtures within a first created supercritical fluid anti-solvent. Dense fluids are used in combination with sub-atmospheric, atmospheric and super-atmospheric plasma adjuncts (cold and thermal plasmas) to enhance substrate surface cleaning, modification, precision drying and deposition processes herein. Moreover, conventional wet cleaning agents such as hydrofluoric acid and ammonium fluoride may be used with the present invention to perform substrate pre-treatments prior to precision drying and cleaning treatments described herein. Finally, dense fluid such as solid phase carbon dioxide and argon may be used as a follow-on treatment or in combination with plasmas to further treat a substrate surface.

Abstract: The present invention is in the field of household cleaning tools. The invention further relates to the use of an air-water jet for the cleaning of hardsurfaces. It is an object of the present invention to provide easier cleaning of hard surfaces. It is therefore an object of the present invention to provide a process of easier cleaning of hard surfaces, especially by means of a device that uses a relatively low water flow rate. Surprisingly it has been found that an external mix air-water jet device may be used for cleaning hard surfaces.

Abstract: Disclosed herein are a dryer and a method of controlling a cleaning operation thereof that are capable of supplying moisture into a drying chamber of the dryer to wet contaminants in the drying chamber and blowing air to the wetted contaminants to remove the contaminants. The method includes supplying moisture into a drying chamber to wet contaminants in the drying chamber and removing the contaminants wetted by the moisture.

Abstract: A resist removing device 1 functions to remove a resist from a substrate while preventing occurrence of popping phenomenon and at the same time attains reduction in cost of energy for the resist removing and has a simplified constitution. The resist removing device 1 is equipped with a chamber 2 for containing therein a substrate 16 (for example, a substrate having a high-doze ion implanted resist), and with a pressure below the atmospheric pressure, the chamber 2 is fed with ozone gas, unsaturated hydrocarbons and water vapor. The ozone gas may be an ultra-high concentrated ozone gas that is produced by subjecting an ozone containing gas to a liquefaction-separation with the aid of a vapor pressure difference and then vaporizing the liquefied ozone. For cleaning the substrate 16 thus treated, it is preferable to use ultra-pure water. The chamber 2 is equipped with a susceptor 15 for holding the substrate 16. The susceptor 15 is heated to a temperature of 100° C. or below.

Abstract: In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.

Abstract: A cleaning apparatus comprises a container configured to hold an article to be cleaned, a cleaning solvent dispenser configured to supply a cleaning solvent to the container, an energy generator configured to provide thermal energy to an interior of the container; and a control device in communication with the energy generator and configured to select thermal energy sufficient to sublimate the particles. The cleaning solvent comprises a solvent and nanofabricated particles dispersed therein. The control device controls the energy generator to provide thermal energy to the cleaning solvent in container in which the article is submerged in order to cause sublimation of the particles.

Abstract: A method for cleaning a surface of a substrate having a circuit pattern formed thereon, includes: forming a liquid film on the surface by feeding a cleaning solution onto the center of the surface while rotating the substrate with the substrate kept horizontal; forming a dry region by discharging gas to the center while moving a position of feed of the cleaning solution on the surface by a distance from the center toward the periphery of the substrate with the substrate being rotated; moving the position of feed of the cleaning solution on the surface toward the periphery at a speed equal to a speed at which the dry region is expanded toward the periphery while rotating the substrate; and controlling temperature of the cleaning solution to form the liquid film such that the temperature becomes higher than process atmosphere temperature on the surface during feed of the cleaning solution.

Abstract: A method of priming and drying substrates having high-aspect ratio trenches. In one aspect, the method comprises: a) supporting at least one substrate having high-aspect ratio trenches in a process chamber having a gaseous atmosphere; b) sealing the process chamber; c) vacuuming the process chamber to achieve a first sub-atmospheric pressure within the process chamber; d) introducing a wetting solution into the process chamber while maintaining the process chamber at a second sub-atmospheric pressure until the substrate is immersed in the wetting solution; e) restoring the process chamber to atmospheric pressure while the substrate remains immersed in the wetting solution; and f) removing the substrate from the wetting solution.

Abstract: The present invention relates to a laundry machine and a method for operating the same for removing wrinkles or the like from laundry by using high temperature and high humidity air instead of steam. The method for operating a laundry machine includes the steps of a course selecting step for selecting an operating course, and a high temperature and high humidity air supply step for supplying high temperature high humidity air to a drum from an air supply unit.

Abstract: A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

Abstract: Methods for fabricating a semiconductor device from a semiconductor substrate having a metal-comprising material and a disposable material are provided. In accordance with an exemplary embodiment, the method comprises providing a system for exposing the disposable material to a liquid chemistry and removing oxygen from the system. The disposable material is exposed to the liquid chemistry and is removed from the semiconductor substrate using the liquid chemistry and simultaneously the metal-comprising material is left substantially in tact.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: Herein disclosed is a device and a method for liquid treatment of a disc-like article comprising rotating a disc-like article, dispensing liquid onto the disc-like article when rotated, collecting liquid, which is flung off the disc-like article when rotated, providing a plate arranged parallel to the disc-like article and facing the disc-like article when rotated, and directing gas parallel to the plate across the plate.

Abstract: A method for fabricating semiconductor devices, e.g., strained silicon MOS device, includes providing a semiconductor substrate (e.g., silicon wafer) having a surface region, which has one or more contaminants and an overlying oxide layer. The one or more contaminants is at least a carbon species. The method also includes processing the surface region using at least a wet process to selectively remove the oxide layer and expose the surface region. The method further includes subjecting the surface region to a laser treatment process for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants provided on the surface region. The method also includes removing the laser treatment process to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second.

Abstract: A wafer W is processed by supplying a two-fluid, high pressure jet water, or mega-sonic water onto the wafer W, while rotating the wafer W in an essentially horizontal state. After supply of the cleaning fluid is stopped, the wafer W is dried by rotating the wafer W at a higher speed than that used in supplying the cleaning fluid. No rinsing process using purified water is performed in a period after stopping supply of the cleaning fluid and before rotating the substrate at the higher speed.

Abstract: A process is provided for treating a semiconductor wafer at a target wafer temperature. This process includes the following steps: a) determining the target wafer temperature of the semiconductor wafer during a given wafer treatment process step; b) providing a treatment chamber having at least one semiconductor wafer disposed therein; c) dispensing water vapor into the treatment chamber in an amount to provide the chamber with an atmospheric environment having a dew point sufficiently close to the target wafer temperature to provide a temperature regulating effect; and d) initiating the given wafer treatment process step when the atmospheric environment of the treatment chamber is at the dew point of step c).

Abstract: Provided is a substrate processing method that prevents generation of watermarks on a substrate and can be performed at a low cost. The method controls the ambient humidity around the substrate depending on the kind of the chemical liquid, when the substrate is processed with the chemical liquid. The control of the humidity is performed at least in a drying step that dries the substrate W. In one embodiment, the ambient humidity around the substrate is controlled when a fluid containing IPA as a drying fluid is supplied to the substrate W after processing the substrate W with the chemical liquid.

Abstract: The pickling process designed for pickling electrical steel strip in a continuous fashion comprising immersing the strip in at least one pickling tub. The pickling tub contains a mixture of HCl, Fe2+, and Fe3+ and a low concentration of HF. Upon exiting the final pickling tub, the strip may be brushed or scrubbed to loosen any residual scale to form a clean strip.

Abstract: Disclosed are cleaning solvents and cleaning methods for metallic compounds deposited on the equipment that supplies organometallic compounds to the manufacturing tool in the photovoltaic industry or the semiconductor industry. The cleaning solvents and the cleaning methods disclosed not only selectively remove the metallic compound without corroding the equipment, but also improve the ordinary cleaning process. Moreover, the cleaning solvents and the cleaning methods disclosed improve maintenance costs for the supply system because the equipment may be cleaned without being detached from the supply system.

Abstract: According to an embodiment, a supercritical drying method includes: introducing a semiconductor substrate of which a surface is wet with a supercritical displacement solvent into a chamber; supplying a first supercritical fluid being based on first carbon dioxide to the chamber; supplying a second supercritical fluid which is based on second carbon dioxide to the chamber, after the supplying of the first supercritical fluid; and lowering an inside pressure of the chamber to gasify the second supercritical fluid and to discharge the gasified second supercritical fluid from the chamber. The first carbon dioxide is generated by recovering and recycling the carbon dioxide discharged from the chamber. The second carbon dioxide contains no supercritical displacement solvent or contains the supercritical displacement solvent in a concentration lower than that in the first carbon dioxide.

Abstract: A substrate processing method includes a cleaning processing step, a mixed organic solvent supplying step, and a fluorine organic solvent supplying step. The cleaning processing step is a step of cleaning a main surface of a substrate by supplying deionized water to the substrate. The mixed organic solvent supplying step is a step of supplying a fluid of a mixed organic solvent to the main surface of the substrate after the cleaning processing step. The fluid of the mixed organic solvent contains a fluid of a water-soluble organic solvent and a fluid of a fluorine organic solvent having a smaller surface tension than that of the deionized water and a lower water solubility than that of the fluid of the water-soluble organic solvent. The fluorine organic solvent supplying step is a step of supplying the fluid of the fluorine organic solvent to the main surface of the substrate without supplying the fluid of the water-soluble organic solvent after the mixed organic solvent supplying step.

Abstract: A component from a substrate processing chamber which has plasma process residues on both its internal and external surfaces, is removed from the processing chamber, and transferred to a cleaning chamber. The component is exposed to an energized cleaning gas in the cleaning chamber, and the cleaning gas is exhausted from below the component so that the cleaning gas cleans off the residues on both the internal and external surfaces of the component. It has been determined that the cleaning gas can also repair surface defects in the component.

Abstract: A method of cleaning equipment such as heat exchangers, evaporators, tanks and other industrial equipment using clean-in-place procedures and a pre-treatment solution prior to the conventional CIP cleaning process. The pre-treatment step improves the degree of softening of the soil, and thus facilitates its removal. The pre-treatment solution can be a strong acidic solution, a strong alkaline solution, or comprise a penetrant. A preferred strong acidic solution is an acid peroxide solution. In some embodiments, the pre-treatment may include no strong alkali or acid ingredient; rather, the penetrant provides acceptable levels of pre-treatment.

Abstract: A water quality control method for an evaporative cooling water chiller uses a water pump to transport cooling water from a water tank to a water-spraying element via a water pipe. The cooling water is sprayed onto fins and a refrigerant pipe of a first heat exchanger, flows along the fins and is collected in the water tank. Thereby, the cooling water reduces the temperature of the heat exchanger. The water pump is set to operate for a first period and to stop for a second period so that the temperature of the fins and the refrigerant pipe increases. Thereby, the limescales attached to the heat exchanger are detached and drop into the water tank. Subsequently the water pump is turned on again. The cooling water in the water tank flushes out the accumulated particles on the bottom of the water tank, and clean cooling water is added.

Abstract: A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).

Abstract: A method of cleaning a support plate according to which, while no waste solution is produced after cleaning the support plate, the support plate can be treated at low cost. The method of cleaning the support plate includes the step of removing an organic substance adhered to the support plate by putting the support plate in contact with oxygen plasma.

Abstract: The present invention relates to a method of cleaning and after treatment of optical surfaces in an irradiation unit, said irradiation unit comprising a radiation source (1, 31) emitting EUV-radiation and/or soft X-rays, a first volume (40) following said radiation source (1, 31) and containing first optical components (3, 33) with said optical surfaces, and a second volume (41) following said first volume (40) and containing second optical components (38). The method comprises at least one cleaning step in which a first gas or gas mixture is brought into contact with said optical surfaces, thereby forming volatile compounds with contaminations deposited on said optical surfaces, wherein said compounds are pumped out of the first volume (40) together with the first gas or gas mixture.

Abstract: Methods for processing substrates in dual chamber processing systems comprising first and second process chambers that share resources may include performing a first internal chamber clean in each of the first process chamber and the second process chamber; and subsequently processing a substrate in one of the first process chamber or the second process chamber by: providing a substrate to one of the first process chamber or the second process chamber; providing a process gas to the first process chamber and the second process chamber; forming a plasma in only the one of the first process chamber or the second process chamber having the substrate contained therein; and providing an inert gas to the first process chamber and the second process chamber via one or more channels formed in a surface of respective substrate supports disposed in the first process chamber and the second process chamber while processing the substrate.

Abstract: There is an apparatus for cleaning a substrate (5) mounted on a moveable platen. In an example embodiment, the apparatus comprises a first chamber (20), the first chamber has solvent-dispensing nozzles (25); the solvent-dispensing nozzles wet the substrate surface (5) with a solvent (7) as the platen transports the substrate. The platen moves in a predetermined direction and at a predetermined scan velocity as it transports the substrate into a process chamber. The process chamber has a hot source (30) at a predetermined height (h) from the substrate surface (5); it provides heat energy directed toward the substrate surface, the heat energy evaporates the solvent (7) dispensed on the substrate surface; the solvent evaporation removes particulates (35) from the substrate surface, as the platen transports the substrate from the first chamber (20) into the process chamber. Substrates cleaned may include precision photo-masks, or wafers.

Abstract: A substrate rotates, and a liquid nozzle of a gas/liquid supply nozzle moves to a position above the center of the rotating substrate. In this state, a rinse liquid is discharged from the liquid nozzle onto the rotating substrate. The gas/liquid supply nozzle moves toward a position outside the substrate. A gas nozzle reaches the position above the center of the rotating substrate, so that the gas/liquid supply nozzle temporarily stops. With the gas/liquid supply nozzle stopping, an inert gas is discharged onto the center of the rotating substrate for a given period of time. After that, the gas/liquid supply nozzle again moves toward the position outside the substrate.

Abstract: In a substrate processing method according to the present invention, a cleaning liquid nozzle supplies a rinsing liquid to a central portion of a substrate and thereafter moves from a position corresponding to the central portion of the substrate to a position corresponding to a peripheral, edge portion thereof while supplying the rinsing liquid before stopping at the position corresponding to the peripheral edge portion. Next, a drying liquid nozzle moves from the position corresponding to the peripheral edge portion to the position corresponding to the central portion while supplying a drying liquid. Then, the drying liquid nozzle is kept stationary at the position corresponding to the central portion for a predetermined period of time while supplying the drying liquid. Thereafter, a gas nozzle moves from the position corresponding to the central portion to the position corresponding to the peripheral edge portion while supplying an inert gas.

Abstract: According to one embodiment, a semiconductor substrate whose surface is wet with a chemical solution (solvent) and formed with patterns having an aspect ratio of 10 or more is loaded into a chamber. Then, while the chemical solution (solvent) remains on the semiconductor substrate, its temperature is increased to a predetermined temperature in the range of 160° C. or more and less than the critical temperature of the chemical solution (solvent), and the evaporated chemical solution (solvent) is discharged from the chamber.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: A method and system for measuring contamination, such as metal contamination, on a substrate. A dry cleaning system is utilized for non-destructive, occasional removal of contamination, such as metal containing contamination, on a substrate, whereby a monitoring system coupled to the exhaust of the dry cleaning system is employed to determine the relative level of contamination on the substrate prior to dry cleaning.

Abstract: Provided is a cleaning process which is simplified and in which a time required for the cleaning process is reduced and which has an excellent cleaning effect. The cleaning process comprises loading a wafer in a high pressure cleaner, injecting high-purity gaseous carbon dioxide (CO2) having low pressure into the high pressure cleaner, injecting CO2 having lower pressure than supercritical cleaning pressure into the high pressure cleaner, cleaning the wafer by injecting a supercritical homogeneous transparent phase mixture in which a cleaning additive and supercritical CO2 are mixed, into the high pressure cleaner under a supercritical cleaning pressure, rinsing the wafer by injecting a supercritical rinsing mixture in which a rinsing additive and supercritical CO2 are mixed, into the high pressure cleaner, and separating CO2 from a mixture discharged from the high pressure cleaner.

Abstract: The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a portion of the interior surfaces. A contaminated purge gas is produced by transferring a portion of the contamination from the interior surfaces into the purge gas. The contaminated purge gas is removed from the device and the process is continued until the contaminant concentration in the contaminated purge gas is below a predetermined level.

Abstract: According to one embodiment, a semiconductor substrate having a surface wetted with a chemical solution is introduced into a chamber, and a supercritical fluid is supplied into the chamber. The temperature in the chamber is adjusted to the critical temperature of the chemical solution or higher, so that the chemical solution is put into a supercritical state. The pressure in the chamber is then lowered, and the chemical solution in the critical state is turned into gaseous matter. The gaseous matter is then discharged from the chamber.

Abstract: A method of cleaning at least one article having a surface to be cleaned, the method comprising the steps of inserting the article into a cleaning chamber (3), subjecting the surface of the article to treatment with water vapor under conditions such that at least a portion of the water vapor condenses on said surface of the article as condensed water, and introducing an organic solvent into the cleaning chamber (3) and thereby removing the condensed water from the surface of the article, wherein no immersion of the article in water or aqueous solution takes place in the cleaning chamber.