Abstract: Process for treatment of residual nucleic acids present on the surface of laboratory consumables. The process combines two treatment phases: (1) treatment with ethylene oxide in gaseous phase; then (2) treating the surface with hydrogen peroxide in liquid phase or in gaseous phase. The effect of this treatment is the avoidance of the amplification of residual nucleic acids, in particular during PCR or TMA reactions.

Abstract: A method of cleaning a photolithographic mask or semiconductor wafer involves mixing a gas and water in a jetspray nozzle and discharging the gas and water jetspray stream from a nozzle onto the photolithographic mask or wafer. The water jetspray stream is made up of a cluster of micro water droplets entrained in the gas having a predetermined size sufficient to dislodge contaminant particles adhered to the surface of the mask. The step of mixing the gas and water includes radially injecting the gas from a first plurality of circumferentially spaced apart gas nozzles into a stream of the water and radially injecting the gas from a second plurality of circumferentially spaced apart gas nozzles into the stream of the water, wherein the second plurality of gas nozzles are spaced above or below the first plurality of gas nozzles and radially offset from the first plurality of gas nozzles.

Abstract: A semiconductor substrate cleaning method includes cleaning a semiconductor substrate formed with a line-and-space pattern, rinsing the substrate, supplying the rinse water to rinse the substrate, and drying the substrate. The rinsing includes supplying deionized water and hydrochloric acid into a mixing section to mix the deionized water and the hydrochloric acid into a mixture, heating the mixture in the mixing section by a heater, detecting a pH value and a temperature of the mixture by a pH sensor and a temperature sensor respectively, adjusting an amount of hydrochloric acid supplied into the mixing section so that the rinse water has a predetermined pH value indicative of acidity, and energizing or de-energizing the heater so that the temperature of the mixture detected by the temperature sensor reaches a predetermined temperature, thereby producing the rinse water which has a temperature of not less than 70° C. and is acidic.

Abstract: Embodiments of the invention provide methods for curing an ultra low-k dielectric film within a UV processing chamber. In one embodiment, the method includes depositing an ultra low-k dielectric layer on a substrate in a deposition chamber, and subjecting the deposited ultra low-k dielectric layer to a UV curing processes in a UV processing chamber. The method includes stabilizing the UV processing chamber by flowing an oxygen gas and a purge gas into the UV processing chamber at a flow ratio of about 1:50000 to about 1:100. While flowing the oxygen-doped purge gas, the substrate is exposed to UV radiation to cure the deposited ultra low-k dielectric layer. The inventive oxygen-doped purge curing process provides an alternate pathway to build silicon-oxygen network of the ultra low-k dielectric material, thereby accelerating cross-linking efficiency without significantly affecting the film properties of the deposited ultra low-k dielectric material.

Abstract: In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.

Abstract: A method includes generating a solvent-containing vapor that contains a solvent. The solvent-containing vapor is conducted to a package assembly to clean the package assembly. The solvent-containing vapor condenses to form a liquid on a surface of the package assembly, and flows off from the surface of the package assembly.

Abstract: In a cleaning method, a substrate having a pattern formed on the surface thereof can be cleaned by using a cleaning fluid, while preventing the pattern protrusions from being flattened when the cleaning fluid is removed or dried. The cleaning method includes the steps of: loading a substrate onto a loading platform inside a processing chamber; heating the substrate; and supplying a cleaning fluid onto the surface of the substrate. The substrate is heated in the substrate heating step so that the Leidenfrost phenomenon occurs and steam of the cleaning fluid is interposed between the substrate and droplets of the cleaning fluid supplied to the substrate in the cleaning fluid supply step.

Abstract: A method for treating a semiconductor device includes dissolving an inert gas species in a wet chemical cleaning solution and treating a material layer of a semiconductor device with the wet chemical cleaning solution in ambient atmosphere. The inert gas species is oversaturated in the wet chemical cleaning solution in the ambient atmosphere.

Abstract: Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.

Abstract: A method and system for cleaning a substrate in a multi-module cleaning assembly is provided. The method begins by receiving the substrate into the cleaning module. A cleaning chemistry, at a temperature elevated from an ambient temperature, is applied onto a top surface of the substrate. Concurrent with application of the cleaning chemistry, vapors are exhausted from the cleaning chemistry through a port located below a bottom surface of the substrate with the vapor exhaustion providing a negative pressure relative to a pressure external to the cleaning module. The application of the cleaning chemistry is terminated, followed by termination of the exhausting of the vapors. The substrate is dried after the flowing of inert gas is terminated.

Abstract: Disclosed is a substrate treatment method intended for a substrate having, on its surface, a composite product of an inorganic material containing silicon oxide and an organic material containing carbon and fluorine. The method comprises: an ultraviolet ray treatment step for irradiating the surface of the substrate with ultraviolet ray to remove a part of the organic material; a hydrogen fluoride processing step which is conducted after the ultraviolet ray processing step and which is for supplying a steam of hydrogen fluoride onto the surface of the substrate to remove at least a part of the inorganic material; and a heating processing step which is conducted after the ultraviolet ray processing step and which is for heating the substrate to cause the shrinkage of a part of the organic material that remains unremoved.

Abstract: A method and apparatus for cleaning an article in semiconductor manufacturing are provided. The method includes subjecting a first chamber containing the article to a vapor source while controlling a temperature of the article and a temperature of the vapor source such that vapor from the vapor source condenses on a surface of the article to form a liquid film. The method further includes evaporating the liquid film, whereby the evaporating liquid transports contaminants from the surface of the article. Evaporating includes exposing the first chamber to condensing surfaces having a temperature lower than a temperature of the article, whereby the evaporated liquid condenses on the condensing surfaces. The apparatus includes a first chamber for housing the article, a vapor source connected to the first chamber, a temperature controller, and a second chamber connected with the first chamber to collect the vapor evaporated from the article.

Abstract: A two media spray lance and nozzle useful for moistening at least a portion of absorbent material present in a mixer. The nozzle includes a central body with a connecting portion for connecting the nozzle to the two media spray lance for a supply of liquid and gas thereto, and an atomizing portion. The atomizing portion delivers droplets of liquid to the absorbent material present in the mixer to obtain moistened absorbent material.

Abstract: A surface cleaning apparatus, and in particular a steam mop, comprises a steam generator and a cleaning pad. Steam from the steam generator can be applied to a cleaning composition applied to a stain on a floor surface. The cleaning composition can be applied directly to the floor surface, or indirectly via the cleaning pad.

Abstract: A compact and portable bowling ball cleaner apparatus has a controlled heated temperature/timed steam process that properly and effective removes oil and dirt from the pores and surface of reactive bowling balls and gives restored life and performance to the ball without changing the coverstock or mechanics. The cleaner apparatus is not only cost effective, but a must have product for any avid/league/pro bowler that uses reactive bowling balls. The cleaner apparatus provides an effective, safe, affordable, user friendly, compact and attractive solution for removing oil and dirt from bowling balls.

Abstract: A surface treatment method of a metal member according to an embodiment of the invention includes removing an oily substance on the metal member by using gas-liquid two fluids that are obtained by boiling heated and pressured water under ordinary pressure. A surface treatment device of a metal member for removing an oily substance on the metal member includes self-generation two fluids production means for producing gas-liquid two fluids by boiling heated and pressured water under ordinary pressure, and a surface treatment room carrying out a surface treatment by bringing the self-generation two fluids into contact with the metal member.

Abstract: A method for removing a resist on a substrate includes supplying unsaturated hydrocarbon gas or fluorine substitution product gas of unsaturated hydrocarbon, at a lower pressure than an atmospheric pressure, to a system of reaction capable of heating the substrate and supplying ozone gas at a lower pressure than the atmospheric pressure to the system of reaction. The ozone gas is an ultra-high concentration ozone gas obtained by separating only ozone from ozone-containing gas by a difference of vapor pressure through liquefaction separation and by vaporizing a liquefaction-separated ozone again. The substrate may be cleaned with pure water. A susceptor that holds the substrate is provided in a chamber of the system of reaction and is heated by a light source that emits infrared light. An internal pressure of the chamber is controlled so that a temperature of the substrate is 90° C. or less.

Abstract: Systems and methods for exposing semiconductor workpieces to vapors for through-hole cleaning and/or other processes are disclosed. A representative method includes exposing a semiconductor workpiece to a vapor, with the semiconductor workpiece having an opening extending from a first surface of the workpiece through the workpiece to a second surface facing opposite from the first surface. The opening can include a contaminant, and the method can further include drawing the vapor and the contaminant through at least a portion of the opening and away from the second surface of the semiconductor workpiece.

Abstract: A method for cleaning plated polished disks used in hard drive media is provided. The method includes positioning plated polished disks in a first batch scrubber having multiple first brushes, wherein each of the plated polished disks is positioned between two of the first brushes, and scrubbing the plated polished disks with the first brushes. The method further includes positioning the plated polished disks scrubbed in the first batch scrubber in a second batch scrubber having multiple second brushes, wherein each of the plated polished disks is positioned between two of the second brushes, and scrubbing the plated polished disks with the second brushes.

Abstract: In a substrate processing method according to the present invention, a cleaning liquid nozzle supplies a rinsing liquid to a central portion of a substrate and thereafter moves from a position corresponding to the central portion of the substrate to a position corresponding to a peripheral, edge portion thereof while supplying the rinsing liquid before stopping at the position corresponding to the peripheral edge portion. Next, a drying liquid nozzle moves from the position corresponding to the peripheral edge portion to the position corresponding to the central portion while supplying a drying liquid. Then, the drying liquid nozzle is kept stationary at the position corresponding to the central portion for a predetermined period of time while supplying the drying liquid. Thereafter, a gas nozzle moves from the position corresponding to the central portion to the position corresponding to the peripheral edge portion while supplying an inert gas.

Abstract: The present disclosure provides azeotropic and azeotrope-like compositions comprised of methylperfluoropentene ethers and at least one of methanol, ethanol, 2-propanol, hexane, heptane, trans-1,2-dichloroethylene, ethyl formate, methyl formate, HFE-7100, HFE-7200 and 1-bromopropane or combinations thereof. The present disclosure also provides for methods of use for the azeotropic and azeotrope-like compositions.

Abstract: A reticle is cleaned by vapor condensing on the active surface of the reticle. An embodiment includes positioning the reticle in a cleaning chamber having a bottom surface, with the active surface of the reticle facing the bottom surface of the cleaning chamber, and directing vapor at the active surface of the reticle. Embodiments further include filling a reservoir in a bottom portion of the cleaning chamber with liquid and directing vapor by heating the liquid. Embodiments further include cooling the reticle concurrently with heating the liquid. Embodiments further include rotating the reticle concurrently with heating the liquid and cooling the reticle. Embodiments further include emptying the reservoir and dry spinning the reticle, subsequent to cleaning the reticle.

Abstract: A dishwasher with a closed loop condenser having a moist air conduit, a dry air conduit having a portion in overlying relationship with a portion of the moist air conduit, wherein the overlying portions of the moist air conduit and the dry air conduit form a heat exchanger, and a controllable gate for selectively introducing, exhausting, or redirecting air relative to the condenser.

Abstract: In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.

Abstract: A process for quickly removing hydrocarbon contaminants and noxious gases in a safe and effective manner from catalytic reactors, other media packed process vessels and associated equipment in the vapor phase without using steam. The cleaning agent contains one or more solvents, such as terpenes or other organic solvents. The cleaning agent is injected into contaminated equipment, along with a carrier gas, in the form of a cleaning vapor.

Abstract: The present invention relates to a method for cleaning a usable space of a climatic cabinet, said usable space being surrounded by walls and optionally being provided with fittings, in which steam is generated by heating a water reservoir while at the same time steam is caused to condense on said walls and on any fittings present in the usable space.

Abstract: A method and system for cleaning a substrate in a multi-module cleaning assembly is provided. The method begins by receiving the substrate into the cleaning module. A cleaning chemistry, at a temperature elevated from an ambient temperature, is applied onto a top surface of the substrate. Concurrent with application of the cleaning chemistry, vapors are exhausted from the cleaning chemistry through a port located below a bottom surface of the substrate with the vapor exhaustion providing a negative pressure relative to a pressure external to the cleaning module. The application of the cleaning chemistry is terminated, followed by termination of the exhausting of the vapors. The substrate is dried after the flowing of inert gas is terminated.

Abstract: A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.

Abstract: An apparatus for cleaning the surface of a base, comprising: a base; a plurality of apertures flush with the surface of said base, said apertures being connected to a plurality of sub-channels and wherein said apertures are adapted to expel air; at least one air chamber operatively connected with said plurality of sub-channels; a main channel connected with said at least one air chamber; wherein said main channel is supplied from an air compressor; and a main valve located between said at least one air chamber and said main channel, wherein said main valve regulates the air flow from said main channel to said at least one air chamber, said valve being further adapted to close said main channel.

Abstract: A vaporized material supply apparatus includes: a storage tank for storing a liquid material; a first temperature controller for controlling the storage tank to be at a first temperature; a carrier gas inlet line for introducing a carrier gas into the storage tank; a processing gas outlet line for discharging a processing gas out of the storage tank; a container having an inlet port connecting to the processing gas outlet line and an outlet port via which the processing gas is discharged; an interference member to interfere with flow of the processing gas in the container; and a second temperature controller for controlling the container to be at a second temperature lower than the first temperature.

Abstract: A method of treatment for inhibiting sulfur-based corrosion or scaling or for removing scaling from a surface including inhibiting corrosion caused by sulfur-containing materials, reducing corrosion caused by sulfur-containing materials, inhibiting scaling caused by sulfur-containing and sulfur-containing materials in gas, liquid or solid phase or any combination of multiple phases of materials, reducing scaling caused by sulfur-containing and sulfur-containing materials, and removing scaling caused by sulfur-containing and sulfur-containing materials. The method involves contacting sulfur-containing materials with a composition containing a turpentine liquid. The method also involves contacting corrodible surfaces or surfaces prone to scaling with a composition containing a turpentine liquid.

Abstract: Disclosed are compositions comprising unsaturated hydrofluorocarbons, an alkene with the formula of 1,1,1,4,4,5,5,6,6,6-decafluorohex-2-ene and its isomers (the “153-10 isomers”). The invention further relates to use of said compositions in methods to clean, degrease, deflux, dewater, deposit fluorolubricant, carrier fluid applications and heat transfer applications. The invention further relates to novel 153-10 isomer mixtures, their method of making and their use as cleaning compositions and in the methods listed above.

Abstract: A dish washing machine and a control method of the same are disclosed. The control method of a dish washing machine includes supplying water into a washing compartment through spray arms, a first supplying steam, generated by a first steam generator, into the washing compartment, and when the abnormal operation of the steam generator is detected, terminating the operation of the first stem generator.

Abstract: The invention relates to a method for removing at least part of at least one layer of a composite coating that is formed of fibers and at least one resin that is present on the surface of the body of a gas cartridge. In said method, at least one liquid nitrogen stream is dispensed at a temperature less than ?100 DEG C at a pressure of at least 00 bars upon contact with said coating so as to remove at least part of said coating layer present on the body of the gas cartridge.

Abstract: Treating absorbable sutures that have been sterilized using ethylene oxide with carbon dioxide at or near its supercritical pressure and temperature conditions to remove any residual ethylene oxide.

Abstract: There is disclosed a substrate processing apparatus including a processing chamber housing a substrate, pipes for supplying gas into the processing chamber, and heaters provided in the middle of the pipes, and heating the gas. In the substrate processing apparatus, the heaters heat the gas to a temperature lower than a temperature at which exhaust gas is generated from the pipes to dry the substrate in the heated gas.

Abstract: A method includes generating a solvent-containing vapor that contains a solvent. The solvent-containing vapor is conducted to a package assembly to clean the package assembly. The solvent-containing vapor condenses to form a liquid on a surface of the package assembly, and flows off from the surface of the package assembly.

Abstract: A vacuum processing apparatus includes a vacuum chamber for performing a plasma process and a cleaning process unit for performing a cleaning process to apply a plasma process to a wafer on which a single layer or a laminated film containing a metallic film is formed by using a corrosive gas, and a control unit having a sequence to abort the plasma process when an abnormality occurs in the vacuum chamber and transfer the wafer subjecting to the aborting of the plasma process to the cleaning process unit, after elapsing a predetermined time, to perform the cleaning process.

Abstract: A mobile mattress sanitizing and cleaning system. A cleaning chamber and drying chamber may be located within the body of truck which may also carry a water supply and steam generator. The cleaning and drying chambers are dimensioned and configured to receive a mattress therein, and may be separate or combined. The mattress is steam cleaned in the cleaning chamber and air dried in the drying chamber. The cleaning and drying chambers may face the rear of the truck to facilitate loading and may be oriented such that mattresses stand on edge when being cleaned and dried. The system may include a water purifier. Drying may be conducted by blowers mounted to the drying chamber. Drying air may be heated.

Abstract: According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

Abstract: A substrate processing apparatus includes liquid tanks, a conveyor mechanism that dips multiple semiconductor substrates, arranged with provision of spaces, collectively into liquids in the liquid tanks, and water vapor spray nozzles disposed in gaps between the multiple semiconductor substrates so as to face rear surfaces of the semiconductor substrates. Heated water vapor is sprayed out of the water vapor spray nozzles onto the respective rear surfaces of the multiple semiconductor substrates prior to dipping the semiconductor substrates into the liquid in the liquid tanks.

Abstract: A method for evaluating a cleanliness of a tool, the method includes: receiving a wafer; cleaning the wafer; placing the wafer into the tool for a predefined period; removing the wafer from the tool, performing a contact angle measurement and determining the cleanliness of the wafer.

Abstract: A substrate processing method includes a removing step of removing unwanted matter from a substrate and a vaporizing step performed in parallel to the removing step. In the removing step, an HF vapor that contains hydrogen fluoride and a solvent vapor that contains a solvent capable of dissolving water and having a lower boiling point than water is supplied onto the substrate to etch and remove the unwanted matter. In the vaporizing step, the solvent on the substrate is vaporized.

Abstract: The present invention generally relates to corrosion management systems designed to deliver corrosion protection and/or the management of corrosion to a top portion of an enclosure (e.g., storage tanks, cisterns, containers, etc.). In one embodiment, the present invention relates to corrosion management systems designed to deliver corrosion protection and/or the management of corrosion to a top portion, or roof portion, of an enclosure where such a system includes one or more dispensers designed to deliver at least one corrosion inhibitor to a system designed to protect a top portion of an enclosure (e.g., storage tanks, cisterns, containers, etc.).

Abstract: Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (HWCVD) chamber are provided herein. In some embodiments, a method for cleaning a surface of a substrate may include providing a substrate having a material disposed on a surface of the substrate to a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H2) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H2) gas; and exposing the substrate to the dissociated hydrogen (H2) gas to remove at least some of the material from the surface of the substrate.

Abstract: An apparatus for treating waste comprises a gravity drop steam heating tower for heating the waste to the biological kill temperature using pressurized steam, a first feed member for feeding the waste to be sterilized to the gravity drop steam heating tower, and a vaporization system. The vaporization system includes a heating chamber for facilitating vaporization of liquids in the waste, a conveying member for conveying the waste from the lower end portion of the gravity drop steam heating tower into and through the heating chamber, and a vaporization chamber for receiving the waste from the heating chamber and for releasing vapor entrained in the waste into the vaporization chamber.

Abstract: A method of cleaning industrial equipment includes propelling a sublimable media through a discharge wand. An inner surface and an outer surface of an object are contacted with the media. The media subsequently dissipates or is consumed.

Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

Abstract: Methods and apparatus for cleaning undesired substances from a surface in a semiconductor processing chamber. An cleaning gas mixture is formed onsite and stored in a buffer tank for a time, prior to its introduction into a semiconductor processing chamber, to remove an undesired substance from a surface in the chamber. The undesired substance is removed without the generation of a plasma in the chamber, and at a temperature of less than 300° C.

Abstract: The present invention generally relates to corrosion management systems designed to deliver corrosion protection and/or the management of corrosion to a top portion of an enclosure (e.g., storage tanks, cisterns, containers, etc.). In one embodiment, the present invention relates to corrosion management systems designed to deliver corrosion protection and/or the management of corrosion to a top portion, or roof portion, of an enclosure where such a system includes one or more dispensers designed to deliver at least one corrosion inhibitor to a system designed to protect a top portion of an enclosure (e.g., storage tanks, cisterns, containers, etc.).