Abstract: In a dry process after a cleaning process using a cleaning-liquid nozzle and a rinse process using a side rinse nozzle are performed on a wafer W, the wafer W is turned, feeding of pure water to a center point of the wafer W from a pure-water nozzle is started, and substantially at the same, injection of a nitrogen gas from a gas nozzle to a center portion of the wafer W at a point at an adequate distance apart from the center of the wafer W is started. Next, while the pure-water nozzle is caused to scan toward the periphery of the wafer W, the gas nozzle is caused to scan toward the periphery of the wafer W in an area radially inward of the position of the pure-water nozzle after the gas nozzle passes the center of the wafer W.

Abstract: Some embodiments include methods of treating surfaces with aerosol particles. The aerosol particles may be formed as liquid particles, and then passed through a chamber under conditions which change the elasticity of the particles prior to impacting a surface with the particles. The change in elasticity may be an increase in the elasticity, or a decrease in the elasticity. The change in elasticity may be accomplished by causing a phase change of one or more components of the aerosol particles such as, for example, by at least partially freezing the aerosol particles, or by forming entrained bubbles within the aerosol particles. Some embodiments include apparatuses that may be utilized during treatment of surfaces with aerosol particles.

Abstract: Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.

Abstract: A method of treating a substrate comprises, in one aspect, placing a substrate having material on a surface thereof in a treatment chamber; directing a stream of a liquid treatment composition to impinge the substrate surface; and directing a stream of water vapor to impinge the substrate surface and/or to impinge the liquid treatment composition. A preferred aspect of this invention is the removal of materials, and preferably photoresist, from a substrate, wherein the treatment composition is a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors.

Abstract: A method of controlling a dish washing machine capable of automatically washing items to be washed is disclosed. The method includes performing a steam spraying action defined to spray stream on a plurality of racks containing items to be washed, initiating a first water spraying action defined to spray on at least one first rack which is exposed firstly to the stream, and initiating a second water spraying action defined to spray water on at least one second rack, different from the first rack, wherein spraying water on the first rack begins prior to spraying water on the second rack.

Abstract: The present invention relates to a condensation and washing device with which in particular the process vapours which occur during the production of polylactide can be processed and cleaned. Furthermore, the present invention relates to a polymerisation device for the production of polylactide and also to a method for processing process vapours which occur during the production of polylactide; possibilities for use of both the condensation and washing devices and of the method are likewise mentioned.

Abstract: Embodiments described herein provide methods for removing native oxide surfaces on substrates while simultaneously passivating the underlying substrate surface. In one embodiment, a method is provided which includes positioning a substrate containing an oxide layer within a processing chamber, adjusting a first temperature of the substrate to about 80° C. or less, generating a cleaning plasma from a gas mixture within the processing chamber, such that the gas mixture contains ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater, and condensing the cleaning plasma onto the substrate. A thin film, containing ammonium hexafluorosilicate, is formed in part, from the native oxide during a plasma clean process. The method further includes heating the substrate to a second temperature of about 100° C. or greater within the processing chamber while removing the thin film from the substrate and forming a passivation surface thereon.

Abstract: A method of doping an intrinsically conductive polymer film is provided. The method includes contacting the film with a first acid dopant to form a primary doped intrinsically conductive polymer film; cleaning the primary doped intrinsically conductive polymer film by contacting the primary doped intrinsically conductive polymer film with a vapor; dipping the vapor-cleaned primary doped intrinsically conductive polymer film into a solution including at least a second acid dopant and an organic solvent to form a secondary doped intrinsically conductive polymer film; and annealing the secondary doped intrinsically conductive polymer film to produce a tertiary doped intrinsically conductive polymer film.

Abstract: A method for providing substantially similar chamber condition before each wafer process operation in a semiconductor process chamber is provided. The method allows for prevention of transport of particle and metal contamination from chamber surfaces to the processed wafer. The method initiates with depositing a silicon containing layer over an inner surface of an empty semiconductor process chamber. Then, a wafer is introduced into the semiconductor process chamber after depositing the silicon containing layer. Next, a process operation is performed on the wafer. The process operation deposits a residue on the silicon containing layer. Next, an in-situ cleaning process is initiated upon completion of the processing operation and removal of the wafer.

Abstract: An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.

Abstract: A processing system 1 comprises: a processing vessel 30 configured to accommodate an object to be processed W in a processing space 83; a process-fluid generating part 41 configured to generate a process fluid of a predetermined temperature; and a main duct 56 arranged between the process-fluid generating part 41 and the processing vessel 30, the main duct 56 being configured to guide the process fluid supplied from the process-fluid generating part 41. A process-fluid supply duct 171 is arranged on a downstream side of the main duct 56 via a switching valve 70, the process-fluid supply duct 171 being configured to introduce the process fluid into the processing space 83 of the processing vessel 30. A process-fluid bypass duct 172 is arranged on the downstream side of the main duct 56 via the switching valve 70, the process-fluid bypass duct 172 being configured to guide a process fluid, which is not introduced to the process-fluid supply duct 171, so as to bypass the processing space 83.

Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part.

Abstract: Cryogenic fluids are used to remove contaminants such as hard scale deposits from heating and/or heat transfer equipment. The fluid may be cryogenically cooled to achieve a liquid phase and/or a mixture of liquid and gas phases. The fluid may also be pressurized. The mixture does not include a solid phase. A particle injection port is not required. The cryogenic fluid contacting the surface of a scale or other contaminant that has built-up during service of heating or heat exchanging equipment causes a near instantaneous contraction at the scale surface. Cracks form at the scale surface contacted by the cryogenic fluid. These cracks extend through the scale thickness to the underlying material of the equipment of the heating and/or heat exchanging component. The fractured surface scale separates by spalling or de-cohesion from the underlying equipment structure and is moved off the surface by the action of the exiting cryogenic fluid.

Abstract: A method and apparatus for cleaning, rinsing and Marangoni drying substrates is provided. The invention includes spraying a line of fluid to a substrate, thereby creating an air/fluid interface line on the substrate; supplying a line of drying vapors to the air/fluid interface line, thereby creating a Marangoni drying effect along the air/fluid interface line; and moving the substrate relative to the air/fluid line. Numerous other aspects are provided.

Abstract: A cleaning method includes a first operation step of allowing a mist of a first cleaning fluid atomized in the order of microns to permeate into and remain in a food debris stuck on a to-be-cleaned item for a predetermined period of time; and a second operation step of removing the food debris on the to-be-cleaned item by using a second cleaning fluid. The second operation step is to be performed after the first operation step.

Abstract: In a process chamber of a substrate processing apparatus, such as an RTP apparatus, a carrier is placed and configured to carry out a contaminant that has been attached to it. In this state, a cleaning gas containing N2 and O2 is introduced into the process chamber, and cleaning is performed under conditions including a pressure of 133.3 Pa or less and a temperature of 700° C. to 1,100° C. This cleaning is repeatedly performed by sequentially replacing a plurality of carriers.

Abstract: A method for cleaning a steam generator may include supplying water to the steam generator and boiling the water in the steam generator to separate and expel at least some deposits in the steam generator.

Abstract: Inside a vacuum chamber 200 a cleaning unit 204 provides atomic hydrogen or atomic deuterium for cleaning a surface 202 at a pressure of less than 10?4 Torr or of more than 10?3 Torr. The surface 202 is heated by the heating unit 203 to a temperature of at least 50° C. This allows achieving cleaning rates of more than 60 ?/h. Preferably, the surface 202 is the surface of a multilayer mirror 201 as used in an EUV lithography apparatus.

Abstract: The present application describes a produce wash system for dispersing carbon dioxide into a liquid medium which includes a container containing carbon dioxide gas which is connected to another container or pipe capable of containing a liquid medium so that the gas from the first container is capable of being dispersed into the liquid medium of the second container or pipe.

Abstract: A method for removing a mask layer and reducing damage to a patterned dielectric layer is described. The method comprises disposing a substrate in a plasma processing system, wherein the substrate has a dielectric layer formed thereon and a mask layer overlying the dielectric layer. A pattern is formed in the mask layer and a feature formed in the dielectric layer corresponding to the pattern as a result of an etching process used to transfer the pattern in the mask layer to the dielectric layer. The feature includes a sidewall with a first roughness resulting from the etching process. A process gas comprising CO2 and CO is introduced into the plasma processing system, and plasma is formed. The mask layer is removed, and a second roughness, less than the first roughness, is produced by selecting a flow rate of the CO relative to a flow rate of the CO2.

Abstract: The present invention is an apparatus and process for cleaning substrates using fluids, including dense fluids. A perforated centrifuge drum operates within a pressure vessel. A dense fluid cleaning and management system including suitable process condition sensors provides for exchanging fluid with the pressure vessel.

Abstract: The present invention relates to a method for increasing the solubility of oils in refrigerant compositions within a system using a refrigerant compressed with a mechanical device by adding polyolester directly to the refrigerant followed by charging a mixture of the polyolester and refrigerant into the system (air conditioner, refrigerator, etc.). The present invention also relates to a method of optimizing mineral oil return in a system using a refrigerant compressed with a mechanical device and a method of cleansing heat exchange tubes of a system using a refrigerant compressed with a mechanical device by adding polyolesters directly to a refrigerant composition followed by charging a mixture of the polyolester and refrigerant into the system.

Abstract: A cleaning method and system that utilize an organic cleaning solvent and pressurized fluid solvent is disclosed. The method and system have no conventional evaporative hot air drying cycle. Instead, the method and system utilize the solubility of the organic solvent in pressurized fluid solvent as well as the physical properties of pressurized fluid solvent. After an organic solvent cleaning cycle, the solvent is extracted from the textiles at high speed in a rotating drum in the same way conventional solvents are extracted from textiles in conventional evaporative hot air dry cleaning machines. Instead of proceeding to a conventional drying cycle, the extracted textiles are then immersed in pressurized fluid solvent to extract the residual organic solvent from the textiles. This is possible because the organic solvent is soluble in pressurized fluid solvent. After the textiles are immersed in pressurized fluid solvent, pressurized fluid solvent is pumped from the drum.

Abstract: A method for in-situ cleaning of a dielectric dome surface having been used in pre-clean processes is provided. Carbon containing deposits are removed by providing a plasma of one or more oxidizing gases which react with the carbon containing films to form volatile carbon containing compounds.

Abstract: A sprayer device including a generator for generating an air stream having a predetermined velocity and a nozzle unit for the discharge of liquid therefrom, whereby to produce a mist stream capable of being propelled to a predetermined location. The mist stream has a measurable and controllable lateral dimension at the predetermined location. The sprayer device is used particularly for moistening cattle, especially cows, in sheds, and taking into account the effect of the wind. Rows of sprayers project water sprays directed toward the cattle. The sprayers may be angularly shifted to take into account the deviating effect of the wind. A processor calculates the angular shift that is needed for the existing wind direction and intensity. All the sprayers concurrently receive the angular shift, which is transmitted to the first sprayer from a control station and successively from each sprayer to the next.

Abstract: A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.

Abstract: The present invention is a method of cleaning an object in an open aqueous cleaning system. The method is directed to an open cleaning vessel into which water used for cleaning a material or object can be introduced. A means is provided for introducing a reactant chemical to the vessel to form an aqueous solution. Cleaning of the surface is in the form of bubble formation on the part that vaporizes the chemical in order to react the oxidizer in the vapor state to the exposed surface at the bubble growth area. Treatment in the form of etching or any other process in which material is removed from a solid surface displaces the liquid residue from the surface. The resulting process produces no dissolution or emulsion of the contaminant and therefore can be easily separated from the chemical cleaner. The process also conserves chemistry, water, energy, and reduces pollution.

Abstract: A method and device for cleaning and decontaminating contaminated plastics, such as, for example, RPET or similar polymers, which have been crushed to flakes, where an ionized gas flows around the flakes.

Abstract: A cleaning arrangement is provided for use in an EUV lithographic apparatus, for example an EUV lithographic apparatus with a Sn source. The cleaning arrangement includes a gas source for a hydrogen containing gas and a hydrogen radical source. The hydrogen radical source is a source of (UV) radiation which induces photo dissociation of the hydrogen. Radicals may reduce Sn oxides (if present) and my form volatile hydrides of Sn deposition and/or carbon deposition. In this way the cleaning arrangement can be used to clean optical elements from Sn and/or C deposition. The EUV source may be used as hydrogen radical source. An optical filter is used to remove undesired EUV radiation and transmit desired UV radiation.

Abstract: A coke removal system removes coke deposits from the walls of a high temperature passage in which hydrocarbon fuel is present. The system includes a carbon-steam gasification catalyst and a water source. The carbon-steam gasification catalyst is applied to the walls of the high temperature passage. The water reacts with the coke deposits on the walls of the high temperature passage to remove the coke deposits from the walls of the high temperature passage by carbon-steam gasification in the presence of the carbon-steam gasification catalyst.

Abstract: A cleaning effect is improved by cleaning a component that has a recess structure by using a cleaning medium of a liquefied gas or a supercritical fluid. By the cleaning method of removing adhering substances adhering to at least the surface of the recess structure of the component that has the recess structure, cleaning is carried out by using the supercritical gas or the liquefied gas so that the cleaning medium spreads over the surface of the recess structure.

Abstract: A system for measuring fume generation rates and total fume emissions of welding and allied processes includes a fume collection chamber and an automated welding assembly. The fume collection chamber includes a fume chamber housing, a door attached to the housing, a filter support connected to the housing, a hood connected to the housing and a connector attached to the housing and/or the hood. The automated welding assembly includes a rail, a carriage moveably mounted on the rail, a gun arm connected to the carriage and a welding gun mounted to the gun arm.

Abstract: A method of removing a deposition from an optical element of an apparatus. The method includes providing a hydrogen comprising gas in at least a part of the apparatus, providing nitrogen radicals in the part of the apparatus for generating hydrogen radicals from the hydrogen comprising gas, and contacting the optical element with at least part of the hydrogen radicals to removal the deposition.

Abstract: The invention relates to a method for preventing contamination on the surfaces of optical elements comprising a multi-layer system, during the exposure thereof to radiation at signal wave lengths in an evacuated closed system comprising a residual gas atmosphere, whereby the photocurrent generated by means of photo emission from the radiated surface of the multi-layer system is measured. The photocurrent is used to regulate the gas composition of the residual gas. The gas composition is altered according to at least one lower and one upper threshold value of the photocurrent. The invention also relates to a device for regulating the contamination on the surface of at least one optical element during exposure and an EUV-lithographic device and a method for cleaning the surfaces of the optical elements contaminated by carbon.

Abstract: A method and system for release etching a micro-electrical-mechanical-systems (MEMS) device from a substrate. In one aspect, the invention is a method comprising (a) supporting at least one substrate having a sacrificial oxide and a non-sacrificial material in a process chamber at a pressure and at a temperature; (b) introducing a gas phase mixture comprising a halide-containing species and an alcohol vapor selected from a group consisting of ethanol, 1-propanol, and an aliphatic alcohol having four carbon groups into the process chamber, the gas phase mixture having a volumetric ratio of the halide-containing species to the alcohol vapor of approximately 2 or less; and (c) etching the sacrificial oxide with the gas phase mixture. In another aspect, the invention is a system for carrying out the method.

Abstract: A cleaning method for a turbo molecular pump, which enables the exhausting ability of the turbo molecular pump to be restored without bringing about a decrease in the productivity of a substrate processing apparatus. A vaporizing gas that vaporizes foreign matter attached to an internal surface of the turbo molecular pump is supplied toward the foreign matter.

Abstract: In a method and apparatus for cleaning or processing a workpiece, a process gas is brought into contact with the workpiece by diffusion through a heated liquid layer on the workpiece, and by bulk transport achieved by entraining the gas in a liquid stream, spray or jet impinging on the workpiece. The process gas, which may be ozone, is entrained in the liquid via entrainment nozzles. Use of entrainment and diffusion together increases the amount of gas available for reaction at the workpiece surface, increases the reaction rate, and decreases required process times.

Abstract: There is disclosed a substrate processing apparatus including a processing chamber housing a substrate, pipes for supplying gas into the processing chamber, and heaters provided in the middle of the pipes, and heating the gas. In the substrate processing apparatus, the heaters heat the gas to a temperature lower than a temperature at which exhaust gas is generated from the pipes to dry the substrate in the heated gas.

Abstract: Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. A substrate processing method comprises feeding a processing gas, such as ozone gas, into a processing vessel to pressurize an atmosphere surrounding a substrate. A solvent gas, such as steam, is fed into the processing vessel while the processing gas is fed into the processing vessel, whereby a resist of the substrate can be removed with the solvent gas and the processing gas while metal corrosion, etc. can be prevented.

Abstract: A method of thinning a silicon wafer in a controllable cost-effective manner with minimal chemical consumption. The wafer is placed into a process chamber, after which ozone gas and HF vapor are delivered into the process chamber to react with a silicon surface of the wafer. The ozone and HF vapor may be delivered sequentially, or may be mixed with one another before entering the process chamber. The ozone oxidizes the silicon surface of the wafer, while the HF vapor etches the oxidized silicon away from the wafer. The etched oxidized silicon is then removed from the process chamber. As a result, the wafer is thinned, which aids in preventing heat build-up in the wafer, and also makes the wafer easier to handle and cheaper to package. In alternative embodiments, HF may be delivered into the process chamber as an anhydrous gas or in aqueous form.

Abstract: Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Abstract: The pulsed partial pressure hydrogen cleaning of cobalt-based alloys in turbine components is achieved by disposing the component within a vacuum furnace and heating the component. Upon heating to about 1400° F., a partial pressure hydrogen gas and a vacuum are repetitively cycled within the furnace by supplying in each cycle a fresh supply of hydrogen gas, followed by removal of reaction products between the hydrogen gas and surface contaminants and substantially all residual hydrogen gas from within the furnace. The repetitious cycling renders the surfaces clean, enabling refurbishment thereof by activated diffusion healing repair.

Abstract: A cleaning method for a semiconductor substrate including placing the semiconductor substrate into a cleaning chamber and injecting ozone gas (O3) into the cleaning chamber. This process operates to cleanse the semiconductor substrate without corrosion or etching of the semiconductor substrate; even when the substrate has metal layer made of tungsten.

Abstract: An automatic air-blown cleaning apparatus for cleaning a liquid crystal display (LCD) component in an LCD assembly process. The automatic air-blown cleaning apparatus has an assembly station for receiving and assembling the liquid crystal display component, a conveying device for delivering the liquid crystal display component to the next assembly station, and an air filtering blower provided on the conveying device. The air filtering blower sends an air flow toward the liquid crystal display component to remove residual matter from the liquid crystal display component.

Abstract: The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.

Abstract: Method for processing an article by contacting the article with a dense fluid. The article is introduced into a sealable processing chamber and the processing chamber is sealed. A dense fluid is prepared by introducing a subcritical fluid into a pressurization vessel and isolating the vessel, and then heating the subcritical fluid at essentially constant volume and essentially constant density to yield a dense fluid. At least a portion of the dense fluid is transferred from the pressurization vessel to the processing chamber, wherein the transfer of the dense fluid is driven by the difference between the pressure in the pressurization vessel and the pressure in the processing chamber, thereby pressurizing the processing chamber with transferred dense fluid. The article is contacted with the transferred dense fluid to yield a spent dense fluid and a treated article, and the spent dense fluid is separated from the treated article.

Abstract: A vapor generating and recovery apparatus including a housing having an open top, a closed bottom and a plurality of sidewalls therebetween defining a boiling sump with a treating solution therein. The housing is further provided with at least one heating coil and at least one condensing coil for providing and removing heat from the apparatus. The housing also includes at least one glove extending through one of the sidewalls allowing a user to manually handle and/or manually spray parts or objects needing cleaning using the vapor generating and recovery apparatus.

Abstract: Disclosed are compositions and methods for cleaning contaminated articles based on the provision of a zeotropic composition comprising (a) at least one flammable solvent having a boiling point at a first pressure; (b) at least one first nonflammable solvent having a boiling point at said first pressure which is less than about said first pressure boiling point of said flammable solvent; and (c) at least one second nonflammable solvent having a boiling point at said first pressure which is greater than about the first pressure boiling point of said flammable solvent.

Abstract: Method for processing an article with a dense processing fluid in a processing chamber while applying ultrasonic energy during processing. The dense fluid may be generated in a separate pressurization vessel and transferred to the processing chamber, or alternatively may be generated directly in the processing chamber. A processing agent may be added to the pressurization vessel, to the processing chamber, or to the dense fluid during transfer from the pressurization vessel to the processing chamber. The ultrasonic energy may be generated continuously at a constant frequency or at variable frequencies. Alternatively, the ultrasonic energy may be generated intermittently.

Abstract: A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidizes contaminants on the workpiece, while the carbon dioxide inhibits corrosion of the metal layer. The liquid solution is preferably heated to a temperature greater than 40° C., and preferably comprises deionized water injected with carbon dioxide gas. The workpiece is preferably rotated within the processing chamber during the cleaning process. The ozone may be entrained in the liquid solution before the liquid solution is introduced onto the workpiece, or the ozone may be introduced separately into the processing chamber.