Abstract: Methods and apparatus for cleaning undesired substances from a surface in a semiconductor processing chamber. An cleaning gas mixture is formed onsite and stored in a buffer tank for a time, prior to its introduction into a semiconductor processing chamber, to remove an undesired substance from a surface in the chamber. The undesired substance is removed without the generation of a plasma in the chamber, and at a temperature of less than 300° C.

Abstract: The present invention generally relates to corrosion management systems designed to deliver corrosion protection and/or the management of corrosion to a top portion of an enclosure (e.g., storage tanks, cisterns, containers, etc.). In one embodiment, the present invention relates to corrosion management systems designed to deliver corrosion protection and/or the management of corrosion to a top portion, or roof portion, of an enclosure where such a system includes one or more dispensers designed to deliver at least one corrosion inhibitor to a system designed to protect a top portion of an enclosure (e.g., storage tanks, cisterns, containers, etc.).

Abstract: A pre-assembled orthopaedic implant adapted for improved gas sterilization. The implant includes a first component adapted for assembly with a second component such that a mating surface of the first component is in close proximity with a mating surface of the second component. At least one gas conduit associated with the mating surface of the first component facilitates a sterilizing gas to penetrate into and dissipate from the interface defined by the mating surfaces.

Abstract: A method for removing a hardened photoresist from a semiconductor substrate. An example method for removing a hardened photoresist layer from a substrate comprising a low-? dielectric material preserving the characteristics of the low-?dielectric material includes: a)—providing a substrate comprising a hardened photoresist layer and a low-? dielectric material at least partially exposed; b)—forming C?C double bonds in the hardened photoresist by exposing the hardened photoresist to UV radiation having a wavelength between 200 nm and 300 nm in vacuum or in an inert atmosphere; c)—breaking the C?C double bonds formed in step b) by reacting the hardened photoresist with ozone (O3) or a mixture of ozone (O3) and oxygen (O2) thereby fragmenting the hardened photoresist; and d)—removing the fragmented photoresist obtained in step c) by wet processing with cleaning chemistries.

Abstract: The present disclosure provides azeotropic and azeotrope-like compositions comprised of methylperfluoroheptene ethers and trans-1,2-dichloroethylene. The present disclosure also provides for methods of use for the azeotropic and azeotrope-like compositions.

Abstract: A method for removing a silicon hydride from the surface of a solid body which comprises treating the silicon hydride with a gas comprising molecular fluorine or reactive species generated from molecular fluorine.

Abstract: Pyrolysis methods for disassociating an organic mass, or coating from an article, by placing the article in an air tight processing chamber, circulating a gaseous mixture of ambient air and at least 40% water vapor from an opening, through the processing chamber and out of an exhaust port, and maintaining the processing chamber at a temperature above 650 degrees Fahrenheit for a sufficient time to disassociate the organic material. A batch oven and a continuous processing oven including entrance and exit air closures that utilize the pyrolysis methods are described.

Abstract: A cleaning apparatus for a semiconductor manufacturing apparatus includes: a oxide removal unit that removes an oxide over a surface of a deposit adhered to components of the semiconductor manufacturing apparatus, and a deposit removal unit that removes the deposit after the oxide over the surface is removed by the oxide removal unit.

Abstract: A semiconductor machine and a cleaning process are provided. The semiconductor machine includes a chamber and a cleaning module. The cleaning process includes the following steps. Firstly, the semiconductor machine is used to perform a semiconductor manufacturing process, wherein a titanium-based material is etched in the semiconductor manufacturing process. Then, a cleaning task is activated to clean the semiconductor machine by using a cleaning agent including a gas mixture of a fluoride compound and oxygen.

Abstract: The invention relates to a method of removing aromatic hydrocarbons from coke-oven gas. The coke-oven gas is contacted with a wash liquid in a gas scrubber, and aromatic hydrocarbons are separated by absorption from the coke-oven gas. Subsequently the wash liquid enriched with aromatic hydrocarbons is heated, and the aromatic hydrocarbons are stripped from the wash liquid using water vapor. After cooling the wash liquid is finally returned to the gas scrubber. According to the invention biodiesel is used as the wash liquid.

Abstract: A dishwasher machine (1), in particular a domestic dishwasher machine, is described, comprising a washing container (2) and devices for washing items to be washed by means of washing solution, as well as a sound wave generator (5), wherein the sound wave generator (5) is used to generate a sound wave which at least assists the drying process of the items to be washed. In order to achieve the highest possible efficiency of the drying process, the sound wave generator (5) is designed to deliver sound waves of different frequency and/or amplitude.

Abstract: A fluoride ion cleaning method includes generating hydrogen fluoride (HF) gas in-situ in a cleaning retort; contacting a part in need of cleaning with the generated HF gas; scrubbing an initial effluent stream in-situ to substantially remove residual HF gas therefrom; and passing the scrubbed effluent gas stream out of the cleaning retort. In an exemplary method, a liquid or gaseous halogenated feedstock is introduced into a cleaning retort; hydrogen gas is introduced into the cleaning retort, HF gas is generated by a reaction of the feedstock with hydrogen gas at a sufficient temperature. In an exemplary method, only HF gas generated in-situ or reconstituted in-situ is utilized in the cleaning process.

Abstract: The present disclosure provides azeotropic and azeotrope-like compositions comprised of methylperfluoroheptene ethers and ethanol. The present disclosure also provides for methods of use for the azeotropic and azeotrope-like compositions.

Abstract: The present disclosure provides azeotropic and azeotrope-like compositions comprised of methylperfluoroheptene ethers and heptane. The present disclosure also provides for methods of use for the azeotropic and azeotrope-like compositions.

Abstract: A reticle is cleaned by vapor condensing on the active surface of the reticle. An embodiment includes positioning the reticle in a cleaning chamber having a bottom surface, with the active surface of the reticle facing the bottom surface of the cleaning chamber, and directing vapor at the active surface of the reticle. Embodiments further include filling a reservoir in a bottom portion of the cleaning chamber with liquid and directing vapor by heating the liquid. Embodiments further include cooling the reticle concurrently with heating the liquid. Embodiments further include rotating the reticle concurrently with heating the liquid and cooling the reticle. Embodiments further include emptying the reservoir and dry spinning the reticle, subsequent to cleaning the reticle.

Abstract: A resist removing device 1 functions to remove a resist from a substrate while preventing occurrence of popping phenomenon and at the same time attains reduction in cost of energy for the resist removing and has a simplified constitution. The resist removing device 1 is equipped with a chamber 2 for containing therein a substrate 16 (for example, a substrate having a high-doze ion implanted resist), and with a pressure below the atmospheric pressure, the chamber 2 is fed with ozone gas, unsaturated hydrocarbons and water vapor. The ozone gas may be an ultra-high concentrated ozone gas that is produced by subjecting an ozone containing gas to a liquefaction-separation with the aid of a vapor pressure difference and then vaporizing the liquefied ozone. For cleaning the substrate 16 thus treated, it is preferable to use ultra-pure water. The chamber 2 is equipped with a susceptor 15 for holding the substrate 16. The susceptor 15 is heated to a temperature of 100° C. or below.

Abstract: Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.

Abstract: A process is provided for treating a semiconductor wafer at a target wafer temperature. This process includes the following steps: a) determining the target wafer temperature of the semiconductor wafer during a given wafer treatment process step; b) providing a treatment chamber having at least one semiconductor wafer disposed therein; c) dispensing water vapor into the treatment chamber in an amount to provide the chamber with an atmospheric environment having a dew point sufficiently close to the target wafer temperature to provide a temperature regulating effect; and d) initiating the given wafer treatment process step when the atmospheric environment of the treatment chamber is at the dew point of step c).

Abstract: A method of making an active gas by generating a glow discharge, non-thermal plasma, in a gas mixture of a carrier gas and a more readily ionisable gas. The gas mixture is exposed to water vapour at or downstream from the generator to form the active gas. The gas mixture includes helium as the carrier gas and up to 40% by volume of at least one noble gas such as argon, krypton, or xenon as the more readily ionisable gas. The gas mixture is ejected at a temperature between 5° C. to 42° C. The active gas may be used for oral treatment such as cosmetic whitening of teeth, medical or non-clinical cleaning of teeth or for cleaning laundry or dishwashing items.

Abstract: Provided is a substrate processing method that prevents generation of watermarks on a substrate and can be performed at a low cost. The method controls the ambient humidity around the substrate depending on the kind of the chemical liquid, when the substrate is processed with the chemical liquid. The control of the humidity is performed at least in a drying step that dries the substrate W. In one embodiment, the ambient humidity around the substrate is controlled when a fluid containing IPA as a drying fluid is supplied to the substrate W after processing the substrate W with the chemical liquid.

Abstract: Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.

Abstract: The instant invention relates to compositions comprising a blend 1-chloro-3,3,3-trifluoropropene (HCFO-1233zd) and 1,1-dichloro-1-fluoroethane (HCFC 141b). In particular, the instant invention relates to blowing agents and foamable compositions containing at least such a blend, as well as solvents containing such a blend.

Abstract: Methods and systems for regenerating a purification bed take advantage of inert gas pressure, such as, for example, supplied by a pipeline. The inert gas (102) is provided at a first pressure and combined with a recycle composition (116) from the vessel (110, 110a) containing the material being regenerated. These streams form a regeneration fluid composition (114) at a second pressure less than the inert gas pressure, which is then routed to the vessel to regenerate the purification bed. A jet compressor (108) may be used for the combining of the inert gas and recycle streams. The recycled composition allows reduction in inert gas usage, while a portion is flared or otherwise disposed of.

Abstract: The present disclosure provides azeotropic and azeotrope-like compositions comprised of methylperfluoroheptene ethers and 2-propanol. The present disclosure also provides for methods of use for the azeotropic and azeotrope-like compositions.

Abstract: The present disclosure provides azeotropic and azeotrope-like compositions comprised of methylperfluoroheptene ethers and methanol. The present disclosure also provides for methods of use for the azeotropic and azeotrope-like compositions.

Abstract: A method of cleaning a thin film forming apparatus, for removing deposits adhering to an inside thereof after supplying a film-forming gas into a reaction chamber to form a amorphous carbon film on a workpiece, includes a heating operation of heating at least one of an inside of the reaction chamber and an inside of an exhaust pipe connected to the reaction chamber to a predetermined temperature; and a removing operation of supplying a cleaning gas containing oxygen gas and hydrogen gas into at least one of the inside of the reaction chamber and the inside of the exhaust pipe heated in the heating operation, heating the cleaning gas to the predetermined temperature to activate the oxygen gas and the hydrogen gas contained in the cleaning gas, and thereafter removing the deposits adhering to the inside of the thin film forming apparatus by the oxygen gas and the hydrogen gas activated.

Abstract: A method of cleaning at least one article having a surface to be cleaned, the method comprising the steps of inserting the article into a cleaning chamber (3), subjecting the surface of the article to treatment with water vapor under conditions such that at least a portion of the water vapor condenses on said surface of the article as condensed water, and introducing an organic solvent into the cleaning chamber (3) and thereby removing the condensed water from the surface of the article, wherein no immersion of the article in water or aqueous solution takes place in the cleaning chamber.

Abstract: Methods of forming conductive patterns include forming a conductive layer including a metal element on a substrate. The conductive layer is partially etched to generate a residue including an oxide of the metal element and to form a plurality of separately formed conductive layer patterns. A cleaning gas is inflowed onto the substrate including the conductive layer pattern. The metal compound is evaporated to remove the metal element contained in the residue and to form an insulating interface layer on the conductive layer pattern and a surface portion of the substrate through a reaction of a portion of the cleaning gas and oxygen. The residue may be removed from the conductive layer pattern to suppress generation of a leakage current.

Abstract: A cleaning apparatus for cleaning an object by supplying a hydrogen radical to the object includes a generation unit configured to generate the hydrogen radical by supplying gas to a heated catalyst, a limitation unit configured to limit supply of gas from the generation unit to the object, and an exhaust unit configured to exhaust gas around the catalyst without passing it through the object in a state where the supply of the gas is limited by the limitation unit.

Abstract: In order to produce a cleaning plant for cleaning work pieces which comprises at least one cleaning station in which the workpiece is subjected to a cleaning process in such a manner that the cleaning process can be organized in a flexible manner and easily adapted to changes in the workpiece, it is proposed that the cleaning plant should comprise at least one manipulating device which picks up a workpiece prior to treatment in a treatment area of the cleaning station, supplies the workpiece to the treatment process within the treatment area of the cleaning station and passes on the workpiece after the treatment in the treatment area of the cleaning station.

Abstract: A cooling gas is discharged from a cooling gas discharge nozzle toward a local section of a front surface of a substrate on which a liquid film is formed. And then the cooling gas discharge nozzle moves from a rotational center position of the substrate toward an edge position of the substrate along a moving trajectory while the substrate is rotated. As a result, of the surface region of the front surface of the substrate, an area where the liquid film has been frozen (frozen area) expands toward the periphery edge from the center of the front surface of the substrate. It is therefore possible to form a frozen film all over the front surface of the substrate while suppressing deterioration of the durability of the substrate peripheral members since a section receiving supply of the cooling gas is limited to a local area on the front surface of the substrate.

Abstract: Semiconductor device fabrication equipment performs a PEOX (physical enhanced oxidation) process, and includes a remote plasma generator for cleaning a process chamber of the equipment. After a PEOX process has been preformed, a purging gas is supplied into the process chamber to purge the process chamber, and the remote plasma generator produces plasma using a first cleaning gas. Accordingly, a reactor of the remote plasma generator is cleaned by the first cleaning gas plasma. Subsequently, the purging gas is supplied to purge the process chamber, and the remote plasma generator produces plasma using a second cleaning gas to remove the first cleaning gas plasma from the remote plasma generator and the process chamber. Finally, full flush operations are performed to remove any gases remaining in the process chamber.

Abstract: A pre-assembled orthopaedic implant adapted for improved gas sterilization. The implant includes a first component adapted for assembly with a second component such that a mating surface of the first component is in close proximity with a mating surface of the second component. At least one gas conduit associated with the mating surface of the first component facilitates a sterilizing gas to penetrate into and dissipate from the interface defined by the mating surfaces.

Abstract: A method of cleaning a turbo pump is described. The turbo pump is coupled with a CVD chamber of depositing a material and thus accumulates the material therein. The method includes using another pump to pump a reactive gas, which can react with the material to form gaseous products, through the turbo pump. Thereby, the turbo pump is cleaned up and is prevented from being a particle source in subsequent CVD operations.

Abstract: A method of processing bone material using supercritical fluids is disclosed. The method comprises placing the bone material in a processing chamber, adding supercritical fluid to the processing chamber, pulsing the supercritical fluid in the processing chamber, and rinsing the bone material. A processing system for processing bone material using supercritical fluids in accordance with the present invention comprises a processing chamber for housing the bone material, a vat for storing a processing fluid, a pump, a heating element, a flow path, a tank, and a solvent port.

Abstract: Embodiments disclose a method for cleaning a mask having a mask film that is of a surface to which a foreign substance containing silicon oxide adheres. In the method, the mask is retained in a cleaning gas containing diluted hydrofluoric acid vapor at a temperature at which an etching rate to the foreign substance becomes higher than an etching rate to the mask film. Further, in the method, the cleaning gas is supplied to the surface of the mask to etch the foreign substance.

Abstract: A system and method for low temperature hydration of food soils allows for hydration of food soils between washing cycles in a dishwasher. A user selects a hydration button to actuate a hydration cycle between dishwashing cycles. During the hydration cycle, a plurality of atomizers are periodically actuated in accordance with a desired amount of hydration selected by the user. Water is supplied from a dedicated water supply line to the atomizers, preferably without being heated, and is distributed throughout a dishwasher chamber utilizing spray nozzles or fans associated with the atomizers. The hydration cycle ends when deactivated, or when a dishwashing cycle is initiated.

Abstract: In a cleaning method, a substrate having a pattern formed on the surface thereof can be cleaned by using a cleaning fluid, while preventing the pattern protrusions from being flattened when the cleaning fluid is removed or dried. The cleaning method includes the steps of: loading a substrate onto a loading platform inside a processing chamber; heating the substrate; and supplying a cleaning fluid onto the surface of the substrate. The substrate is heated in the substrate heating step so that the Leidenfrost phenomenon occurs and steam of the cleaning fluid is interposed between the substrate and droplets of the cleaning fluid supplied to the substrate in the cleaning fluid supply step.

Abstract: A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr.

Abstract: An exhaust foreline for purging fluids from a semiconductor fabrication chamber is described. The foreline may include a first, second and third ports independently coupled to the chamber. A semiconductor fabrication system is also described that includes a substrate chamber that has a first, second and third interface port. The system may also include a multi-port foreline that has a first, second and third port, where the first foreline port is coupled to the first interface port, the second foreline port is coupled to the second interface port, and the third foreline port is coupled to the third interface port. The system may further include an exhaust vacuum coupled to the multi-port foreline.

Abstract: A pre-assembled orthopaedic implant adapted for improved gas sterilization. The implant includes a first component adapted for assembly with a second component such that a mating surface of the first component is in close proximity with a mating surface of the second component. At least one gas conduit associated with the mating surface of the first component facilitates a sterilizing gas to penetrate into and dissipate from the interface defined by the mating surfaces.

Abstract: A rinsing liquid supplier includes a temperature adjuster. The temperature adjuster cools DIW to a temperature lower than room temperature. This temperature adjuster cools down DIW to a temperature not more than 10 degrees centigrade for instance, and cooling down to an even lower temperature of 5 degrees centigrade or below is more preferable. Meanwhile, the temperature adjuster maintains DIW at not less than 0 degrees centigrade, which prevents freezing of the DIW. The cooled DIW supplied to a rinsing liquid pipe is discharged from the rinsing liquid discharge nozzle toward the top surface of the substrate, to thereby form a liquid film. Further, the cooled DIW is discharged toward the rear surface of the substrate from the liquid discharge nozzle via the liquid supply pipe, to thereby form the liquid film on the rear surface. Since the liquid films are already cooled, they are frozen in a short time when the cooling gas is discharged toward the top surface and the rear surface of the substrate.

Abstract: A method for in-situ cleaning of a deposition system is disclosed. The method includes providing a deposition system with portions of the deposition system deposited with at least a group III element or a compound of a group III element. Halogen containing fluid is introduced into the deposition system. The halogen containing fluid is permitted to react with the group III element to form a halide. The halide in solid state is converted to a gaseous state. The halide in gaseous state is purged out of the deposition system.

Abstract: A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.

Abstract: This substrate processing apparatus supplies wafers W accommodated in a closed processing container 10 with ozone gas and steam for processing the wafers W. The apparatus includes an ozone-gas generator 40 for supplying the ozone gas into the processing container 10, a steam generator 30 for supplying the steam into the processing container 10 and a steam nozzle 35 arranged in the processing container 10 and connected to the steam generator 30. The steam nozzle 35 is equipped with a nozzle body 35a having a plurality of steam ejecting orifices 35f formed at appropriate intervals and a heater 35h for preventing dewdrops of the steam from being produced in the nozzle body 35a. Consequently, it is possible to prevent the formation of dewdrops of solvent steam, which may produce origins of particles in the closed processing container, unevenness in cleaning (etching), etc., and also possible to improve the processing efficiency.

Abstract: A wafer processing chamber “chamber” is provided. Broadly speaking, the chamber allows a fluid flow and a fluid pressure within the chamber to be controlled in a variable manner. More specifically, the chamber utilizes removable plates that can be configured to control the fluid flow and the fluid pressure in an inner volume within the chamber. Also, the removable plates can be used to separate the inner volume within the chamber from an outer volume within the chamber. In this manner, the removable plates can be used to create a pressure differential between the inner volume within the chamber and the outer volume within the chamber. A lower pressure in the outer volume within the chamber requires less outer chamber strength to withstand the lower pressure. A lower outer chamber strength requirement translates into an overall decrease in chamber size.

Abstract: An improved method for predicting stability of liquid detergent composition, identifying and designing liquid detergent compositions that provide said desired stability, consumer acceptance and performance.

Abstract: A coke removal system removes coke deposits from the walls of a high temperature passage in which hydrocarbon fuel is present. The system includes a carbon-steam gasification catalyst and a water source. The carbon-steam gasification catalyst is applied to the walls of the high temperature passage. The water reacts with the coke deposits on the walls of the high temperature passage to remove the coke deposits from the walls of the high temperature passage by carbon-steam gasification in the presence of the carbon-steam gasification catalyst.

Abstract: A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied.

Abstract: The invention features in-situ cleaning process for an ion source and associated extraction electrodes and similar components of the ion-beam producing system, which chemically removes carbon deposits, increasing service lifetime and performance, without the need to disassemble the system. In particular, an aspect of the invention is directed to an activating, catalytic, or reaction promoting species added to the reactive species to effectively convert the non-volatile molecular residue into a volatile species which can be removed by conventional means.