Abstract: A method and an apparatus capable of stripping resist efficiently in a short amount of time. A stripping solution under high pressure is jetted from a nozzle to a rotating wafer. The resist layer on the wafer is applied with the jetted stripping solution, and the resist layer can be efficiently stripped in a short amount of time by the multiplied effect by the physical effect caused by the impact of the jetted stripping solution and the chemical effect of the stripping solution.

Abstract: A method of collecting impurities existing on the surface of a semiconductor wafer and in a thin film formed on the semiconductor wafer is provided with a process for dripping collecting liquid on the surface of the semiconductor wafer to which hydrophobic processing is applied, a process for elongating the collecting liquid dripped and turned spherical by surface tension in a direction of the radius of the semiconductor wafer with the surface tension kept, a process for relatively rolling and scanning the elongated collecting liquid, touching the collecting liquid to the surface of the semiconductor wafer and incorporating impurities into the collecting liquid, a process for restoring the elongated collecting liquid to the original spherical shape after the impurities are incorporated and a process for withdrawing the collecting liquid restored to the spherical shape from the surface of the semiconductor wafer.

Abstract: A method for separating a substance such as a hydrocarbon from a particulate material such as soil is provided. An aqueous slurry is formed and a shear force is applied to the slurry, such as in a reversible helical screw conveyor, while the slurry is vibrated. The substance thus separated can then be removed from the particulate material.

Abstract: The present invention relates to a method for removing water from a movable roll jacket surface in a wet section of a paper-making machine, which roll jacket surface preferably belongs to a flexible roll jacket in a shoe press, said method comprising the following steps: arranging a spray device next to the roll jacket surface, making available a collecting device which is provided with an opening and collects liquid, moving said roll jacket surface past said spray device, applying a medium onto said roll jacket surface with the aid of said spray device, and collecting liquid in said liquid-collecting device. The invention is characterized in that said medium is sprayed with high kinetic energy onto said roll jacket surface to follow a fluid stream rebounding from the roll jacket surface, so that the liquid is conveyed to said liquid-collecting device.

Abstract: A method of cleaning using an insonified, pressurized liquid to cleanse and then wash off particulates. The liquid is used to focus and direct the acoustical energy while enabling the trapping of the partials being cleaned and then used to wash off the partials. The acoustical frequency and power is described as optimized to be below the energy level to cause cavitation at the surface of the part being cleaned. The manufacturing process of loading, cleaning and unloading is also described. In another embodiment, a small amount of cavitation is acceptable if the cavitation is below a threshold in which shock waves occur.

Abstract: The stripping agent is sprayed from the tip of the nozzle 33 onto the wafer surface, while the first supply nozzle 33 is actuated to scan from the central portion of the wafer to the outer portion thereof. This operation provides the situation, in which the interface of the residual droplet 38 is pulled back from the center of the wafer to the outer portion of the wafer by the surface tension of the stripping agent supplied from the nozzle. Meanwhile, the second supply nozzle 36 also scans at a same scanning speed as the first supply nozzle 33 scans. Vapor IPA is sprayed from the orifice of the second supply nozzle 36. This provides that vapor IPA is sprayed onto the wafer surface immediately after the stripping agent is sprayed thereon from the first supply nozzle 33, and the residual stripping agent on the wafer surface is efficiently replaced with IPA.

Abstract: A washer and method for cleaning poultry pads or similar items includes a tub which rotates around a horizontal axis. The tub is mounted on a wheeled frame for towing by a car, tractor or other vehicle. Dirty, soiled pads are placed in the tub on-site and the door is then secured. As the tub rotates during its washing cycle the pads are sprayed by water jets positioned along the interior central water conduit. Water collected in a drain is discharged at each revolution through an open gate valve located on the bottom of the drain. Baffles inside the tub agitate the pads and water, thus improving the cleaning ability of the washer.

Abstract: A substrate processing apparatus for supplying a treatment liquid onto the surface of a substrate to treat the same. This apparatus is provided with: a spin chuck for holding and rotating a substrate; a nozzle for supplying a treatment liquid to the substrate held by the spin chuck; a circulating passage arranged such that the treatment liquid supplied to the substrate from the nozzle and used for substrate treatment is circulated to the nozzle and reutilized for substrate treatment; a metal contamination amount measuring device for measuring the metal contamination amount in the treatment liquid passing through the circulating passage; and a judgment processing unit for judging whether or not the value measured by the metal contamination amount measuring device has exceeded a predetermined set value.

Abstract: A method for performing the edge clean operation on a semiconductor wafer. A laser beam is used to accurately clean the edge of the wafer. The wafer is clamped concentrically to a chuck and rotated at a selectable speed, preferably in the range of 10 rpm to 1,000 rpm. A laser beam of variable power is directed onto toward the edge of the wafer at an oblique angle through a nozzle through which an inert purge gas is simultaneously passed. The laser beam removes unwanted deposits at the edge of the wafer and the gas is used to blow away the residue and prevent slag buildup on other parts of the wafer. The process is preferably carried out in an exhausted chamber.

Abstract: A novel chemistry, system and application technique reduces contamination of semiconductor wafers and similar substrates and enhances and expedites processing. A stream of liquid chemical is applied to the workpiece surface. Ozone is delivered either into the liquid process stream or into the process environment. The ozone is preferably generated by a high capacity ozone generator. The chemical stream is provided in the form of a liquid or vapor. A boundary layer liquid or vapor forms on the workpiece surface. The thickness of the boundary layer is controlled. The chemical stream may include ammonium hydroxide for simultaneous particle and organic removal, another chemical to raise the pH of the solution, or other chemical additives designed to accomplish one or more specific cleaning steps.

Abstract: In a method for cleaning for cleaning metallic ion contamination, and especially copper, from wafer containers, the containers are loaded into a cleaning apparatus. The containers are sprayed with a dilute chelating agent solution. The chelating agent solution removes metallic contamination from the containers. The containers are then rinsed with a rinsing liquid, such as deionized water and a surfactant. The containers are then dried, preferably by applying heat and/or hot air movement.

Abstract: A wet treatment method useful in one of a chemical processing and a rinsing step performed upon fabrication of semiconductor devices. A substrate is treated with a desired liquid while revolving the substrate around an axis of rotation outside the substrate such that the liquid flowing on a surface of the substrate is maintained flowing under a centrifugal force greater than gravitation. The substrate is treated while supplying the liquid at a flow rate at least equal to a discharge rate of the liquid only in a direction conforming with that of the centrifugal force or with that of a flow of the liquid flowing on the surface of the substrate under the centrifugal force. The substrate surface is evenly treated with the liquid while avoiding flows of the liquid running against each other or a flow of the liquid stagnating on the surface of the substrate.

Abstract: Where a substrate such as a semiconductor wafer held in a process space in a process chamber consisting of an outside chamber and an inside chamber is subjected to a cleaning processing, a chemical agent such as IPA or a solvent having a surfactant added thereto is supplied in the form of a mist or a vapor toward the substrate under the sate that the substrate is stopped or rotated at a low speed after processing with a chemical agent and a subsequent rinsing processing with a pure water. After the supply of the chemical agent is stopped, the substrate is rotated at a rotating speed higher than said low speed so as to centrifugally remove the chemical agent attached to the substrate.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, near the edge, in which the liquid is applied to a first surface, flows essentially radially to the outside to the peripheral-side edge of the wafer-shaped article and around this edge onto the second surface, the liquid wetting a defined section near the edge on the second surface and thereupon being removed from the wafer-shaped article.

Abstract: A method for minimizing galvanic corrosion effects in a single-wafer cleaning system is provided. The method initiates with spraying a cleaning chemistry containing corrosion inhibitors onto a surface of a wafer. Then, the surface of the wafer is exposed to the cleaning chemistry for a period of time. Next, a concentration gradient at an interface of the cleaning chemistry and the surface of the wafer is refreshed. Then, a rinsing agent and a drying agent are applied simultaneously to remove the cleaning chemistry, wherein the drying agent dries the surface of the wafer prior to a concentration of the corrosion inhibitors being diluted to a level insufficient to provide corrosion protection.

Abstract: A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.

Abstract: Contaminants are removed from a semiconductor wafer by the in-situ generation of oxidizing species. These active species are generated by the simultaneous application of ultra-violet radiation and chemicals containing oxidants such as hydrogen peroxide and dissolved ozone. Ultrasonic or megasonic agitation is employed to facilitate removal. Radicals are generated in-situ, thus generating them close to the semiconductor substrate. The process chamber has a means of introducing both gaseous and liquid reagents, through a gas inlet, and a liquid inlet. O2, O3, and H2O vapor gases are introduced through the gas inlet. H2O and H2O2 liquids are introduced through the liquid inlet. Other liquids such as ammonium hydroxide (NH4OH), hydrochloric acid (HCI), hydrofluoric acid (HF), and the like, may be introduced to further constitute those elements of the traditional RCA clean. The chemicals are premixed in a desired ration and to a predetermined level of dilution prior to being introduced into the chamber.

Abstract: An apparatus for cleaning a semiconductor substrate is provided. In embodiment of the present invention, a megasonic cleaner capable of providing localized heating is provided. The megasonic cleaner includes a transducer and a resonator. The resonator is configured to propagate energy from the transducer. The resonator has a first and a second end, the first end is operatively coupled to the transducer and the second end is configured to provide localized heating while propagating the energy from the transducer. A system for cleaning a semiconductor substrate through megasonic cleaning and a method for cleaning a semiconductor substrate is also provided.

Abstract: Apparatuses and methods of processing a substrate. The apparatus includes a wet-cleaning chamber, a drying chamber, and a substrate transferring chamber which transfers a substrate to and from the wet-cleaning chamber and the drying chamber. The drying chamber is one of a supercritical drying chamber or a low pressure drying chamber. The wet-cleaning chamber is one of a single-wafer cleaning chamber, a horizontal spinning chamber, a megasonic wet-cleaning chamber, or a horizontal spinning chamber having acoustic waves transmitted to the substrate.

Abstract: The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

Abstract: A stripping solution is supplied onto the surface of a substrate and an alternating magnetic flux is applied to the substrate. The alternating magnetic flux induces a current in a conductive pattern of the substrate which heats the conductive pattern while the stripping solution is in contact with the substrate. The stripping solution, containing particles to be cleaned off the substrate, is then removed from the substrate.

Abstract: A foreign matter removing apparatus for removing foreign matter from a surface of a substrate. The apparatus is provided with: a substrate rotating mechanism which holds and rotates the substrate; and a fluid mixture supplying mechanism which generates a fluid mixture by mixing a treatment liquid and a gas, and supplies the fluid mixture onto the surface of the substrate held by the substrate rotating mechanism. The treatment liquid may be deionized water or a resist removing liquid. Examples of the foreign matter to be removed include a resist film formed on the substrate and a residue remaining on the surface of the substrate after ashing of the resist film.

Abstract: A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material. Such surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying, or buffing.

Abstract: The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below −50° C.

Abstract: A processor for processing integrated circuit wafers, semiconductor substrates, data disks and similar units requiring very low contamination levels. The processor has an interface section which receives wafers in standard wafer carriers. The interface section transfers the wafers from carriers onto novel trays for improved processing. The interface unit can hold multiple groups of multiple trays. A conveyor having an automated arm assembly moves wafers supported on a tray. The conveyor moves the trays from the interface along a track to several processing stations. The processing stations are accessed from an enclosed area adjoining the interface section.

Abstract: An apparatus and method for the improved combined edge bead removal and backside wash of spin coated semiconductor wafers is disclosed. This is preferably accomplished by providing a nozzle having a plurality of outlets adapted for the ejection of a cleaning fluid onto the backside of a semiconductor wafer. This cleaning fluid can be EEP or a similar EBR type of solvent. This dual outlet nozzle can be mounted to a stationary EBR arm, and preferably comprises two outlets located on a beveled top surface that are separated at a predetermined angle. The angle of this beveled top surface with respect to a horizontal plane of the processed wafer is preferably about 45 degrees, while the angle of each nozzle outlet with respect to a primary axis of the stationary EBR arm is also preferably about 45 degrees. Other angles are also possible in order to maximize solvent jet efficiency.

Abstract: The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

Abstract: An apparatus for preparing a wafer is provided. The apparatus includes a wafer backside plate and a central shaft. The wafer backside plate has a top surface that includes a cylindrical edge lip, which defines a central aperture. The central shaft is designed to fit within the central aperture. The wafer backside plate is designed to automatically slide between an up position during rotational wager processing and a down position when the wafer is not in rotational wafer processing. A gap defined between the top surface of the wafer backside plate and the wafer is less when the wafer backside plate is in the up position than when the wafer backside plate is in the down position.

Abstract: Embodiments of the present invention are directed toward cleaning semiconductor substrates by dividing a processing chamber into a high-pressure compartment and a low-pressure compartment using a baffle. The baffle may include a pattern of nozzles that provide a flow path between the high pressure compartment and the low pressure compartment and that maintain the two compartments at substantially different pressures. A ratable substrate support is positioned within the low pressure compartment, and an inlet port injects a cleaning mist and a carrier gas into the high pressure compartment. The pressure differential between the two compartments accelerates the droplets from the cleaning mist through the nozzles of the baffle into the low pressure compartment toward the substrate, where a portion of the cleaning mist impacts on the surface of the substrate to form a liquid film or to eject elements of the surface film on the wafer.

Abstract: A single wafer type wet-cleaning technique for effectively preventing chemical fluids from flowing to the back face of a wafer when the back face thereof is wet-cleaned by chemical fluids, wherein purified water is injected and supplied to the back face of the wafer while a plurality of chemical fluids is sequentially supplied vertically from above to the wafer, which is rotatably supported, so that the purified water cleans the back face of the wafer and effectively prevents the chemical fluids from flowing to the back face of the wafer.

Abstract: A method of cleaning and maintenance used for a rotational etching tool, combining the physical characteristics of water (splashed off after striking the surface of a spinning wafer) and a PM (preventive maintenance) computer program, can automatically and quickly clean the interior of the etching tool. By setting the appropriate parameters of PM program, single or all of process chambers can be well cleaned. Also, the DI water dropping positions on the wafer can be altered to create more splashing angles. To clean the sidewalls of the etching chambers, the wafer supporting means is moved between the process chamber and the rotating speed thereof is preferably alter while it is moving. The PM program of the present invention can be executed whenever the cleaning job needs to be done. It not only is timesaving and easy to apply, but also keeps the wafer in a almost-no-particle environment while being etched.

Abstract: A substrate processing apparatus can efficiently form, e.g. by electroless plating, an interconnects-protective layer on the surface of a substrate at a low initial cost for the apparatus and a low running cost without the need for a wide installation space. The substrate processing apparatus includes a loading/unloading and cleaning area accommodating a first transfer robot which has a hand adapted for handling a dry substrate and a hand adapted for handling a wet substrate, a loading port which loads a substrate cassette that houses a substrate, and a cleaning unit for cleaning a substrate. A plating treatment area accommodates a second transfer robot which has a back surface-attracting type of hand provided with a reversing mechanism, a pretreatment unit for carrying out pretreatment of a substrate before plating, and a plating treatment unit for carrying out plating treatment of the substrate.

Abstract: A method and an apparatus for removing a liquid, i.e. a wet processing liquid, from at least one surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter the liquid or the substrate is locally heated to thereby reduce the surface tension of said liquid. By doing so, at least locally a sharply defined liquid-ambient boundary is created. According to the invention, the substrate is subjected to a rotary movement at a speed to guide said liquid-ambient boundary over the surface of the substrate thereby removing said liquid from said surface.

Abstract: A cleaning apparatus includes (1) a pressure tank with at least one cleaning tank arranged therein; (2) means for supplying the cleaning apparatus with a cleaning fluid; and (3) means inside the pressure tank for setting the at least one cleaning tank in motion, wherein by these means the at least one cleaning tank is movably arranged relative to the pressure tank in terms of at least one of rotational or translational movement.

Abstract: A substrate processing apparatus 10 includes a holding table 20 for rotatably holding a wafer W, a nozzle 40 for supplying chemical solutions L1 and L2 to the wafer W, at least one light irradiation units G1 and G2, and a pot 30 placed in the outer radius of the holding table 20 for collecting the processing solutions L1 and L2 that are scattered from the wafer W. The pot 30 also includes a cover 70 that can be moved in the direction of the axis of the holding table 20 so that a plurality of chemical solution collecting chambers M1 and M2 are formed in the pot by changing the position of the cover 70.

Abstract: An apparatus and method for cleaning a roller cover of the type used to apply a coating material is disclosed. In one embodiment the apparatus includes a body, at least one roller cover engaging element for positioning at least partially within the interior area of a roller cover and engaging the roller cover, and a drive adaptor associated with the body for effectuating rotation of the roller cover engaging element, and thus a roller cover connected thereto, with a drive. In one embodiment, the drive adaptor comprises a shaft connected to the body of the apparatus and extending therefrom, the shaft adapted to be rotated by a drive.

Abstract: A method and a system are provided for cleaning a surface of a wafer. The method starts by scrubbing the surface of the wafer with a cleaning brush that applies a chemical solution to the surface of the wafer. In one example, the cleaning brush implements a through the brush (TTB) technique to apply the chemicals. The scrubbing is generally performed in a brush box, with a top cleaning brush and a bottom cleaning brush. The top cleaning brush is then removed from contact with the surface of the wafer. The chemical concentration in the top brush may be maintained at substantially the same concentration that was in the brush during the scrubbing operation. Next, a flow of water (preferably de-ionized water) is delivered to the surface of the wafer. The delivery of water is preferably configured to remove substantially all of the chemical solution from the surface of the wafer before proceeding to a next cleaning operation.

Abstract: A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidizes contaminants on the workpiece, while the carbon dioxide inhibits corrosion of the metal layer. The liquid solution is preferably heated to a temperature greater than 40° C., and preferably comprises deionized water injected with carbon dioxide gas. The workpiece is preferably rotated within the processing chamber during the cleaning process. The ozone may be entrained in the liquid solution before the liquid solution is introduced onto the workpiece, or the ozone may be introduced separately into the processing chamber.

Abstract: In one embodiment of a liquid processing apparatus, a cleaning unit (CLN) 12 includes a rotary plate 61, supporting members 64a, holding members 64b, a chemical nozzle 51 for supplying a wafer W with a chemical liquid, a spring 120 and a pressing mechanism 121 both of which moves each of the holding members 64b. The pressing mechanism 121 moves the corresponding holding member 64b so that the wafer W is held by the holding members 64b while the wafer W is apart from the supporting members 64a and conversely, the wafer W is supported by the supporting members 64a while the wafer W is apart from the holding members 64b. The spring 120 holds the corresponding holding member 64b so that the wafer W is held by the holding members 64b while the wafer W is apart from the supporting members 64a. By supplying the wafer W held by the holding members 64b with the cleaning liquid, it is possible to prevent an occurrence of unprocessed portions on the cleaned wafer W, accomplishing a uniform cleaning for the wafer W.

Abstract: Embodiments of the invention generally provide a substrate spin rinse dry cell that may be used in a semiconductor processing system. The cell generally includes a cell body defining an interior processing volume, and a rotatable substrate support member positioned in the processing volume. The rotatable substrate support member includes a rotatable hub assembly having a plurality of upstanding substrate engaging members extending therefrom, and a central member positioned radially inward of the plurality of upstanding substrate engaging members, the central member having a plurality of backside fluid dispensing nozzles and at least one backside gas dispensing nozzle positioned thereon.

Abstract: A method and apparatus for cleaning the bevel of a semiconductor substrate. The apparatus generally includes a cell body having upstanding walls and a fluid drain basin, a rotatable vacuum chuck positioned centrally positioned in the fluid drain basin, and at least 3 substrate centering members positioned at equal radial increments around the rotatable vacuum chuck. The substrate centering members include a vertically oriented shaft having a longitudinal axis extending therethrough, a cap member positioned over an upper terminating end of the shaft, a raised central portion formed onto the cap member, the raised central portion having a maximum thickness at a location the coincides with the longitudinal axis, and a substrate centering post positioned on the cap member radially outward of the raised central portion, an upper terminating end of the substrate centering post extending from the cap member to a distance that exceeds the maximum thickness.

Abstract: A method for processing a wafer in a spin, rinse, and dry (SRD) module is provided. The method includes engaging a wafer in a process plane, spinning the wafer in the process plane, and cleaning a top surface and a bottom surface of the wafer while spinning the wafer in the process plane. The process plane is configured to define a process angle with a horizontal plane. The process angle is configured to optimize the performance of the SRD module.

Abstract: This invention relates to an apparatus for splash-back proofing, being used for treating a panel or substrate in photolithographic process. The present invention prevents a liquid (such as developer or photoresist solution) dripping on the surface of the substrate or panel from splashing back to the substrate or panel after scattering to the periphery of the substrate or panel by spin-coating. The splashing-back liquid will bring about defects in the patterning or photolithographic process, and result in deterioration of products. The apparatus for splash-back proofing includes a rotating device, at least a liquid spray unit, a guard means surrounding part of the rotating device and a roughening unit. Also, a method for splash-back proofing is disclosed.

Abstract: A cleaning method for cleaning a developer container includes a step of blowing air through an opening formed in the developer container at a first flow rate; a step of sucking air through the opening at a second flow rate which is larger than the first flow rate; wherein while the blowing and suction steps are being simultaneously carried out, ambient air is permitted to enter the developer container through an ambient air inlet.

Abstract: A method that includes rotating a wafer, heating the wafer, applying a first liquid through one or more nozzles to a center of a topside of the wafer that is cooler than the heated wafer, and translating the one or more nozzles to an outer diameter edge of the wafer.

Abstract: A resist stripping apparatus is provided for cleaning a plurality of semiconductor substrates using a wafer cassette that can hold the plurality of semiconductor substrates. The apparatus includes a stripping bath capable of completely immersing the wafer cassette holding the semiconductor substrates, a unit for feeding a substitute liquid for replacing a resist stripping chemical therewith, a unit for discharging the substitute liquid, and at least one chemical high pressure spray nozzle for jetting the substitute liquid under high pressure to the semiconductor substrates.

Abstract: The invention relates to a process including a chemical liquid treatment and a rinse liquid treatment on a substrate, more particularly to a technique for reducing consumption of a chemical liquid while achieving uniform process and preventing particle generation. In a specific embodiment, the process is performed for removing a silicon oxide film formed on a silicon wafer. The process includes three subsequently performed steps, in which (1) diluted hydrofluoric acid (DHF), (2) DHF and de-ionized water (DIW), (3) DIW are supplied, respectively, onto a rotating wafer. Transition from step (1) to step (2) is done immediately before the hydrophilic silicon oxide film is dissolved to expose the underlying hydrophobic silicon layer.

Abstract: A Ferris wheel-like stripping or cleaning mechanism that can be used in semiconductor fabrication, such as in photoresist or other stripping, or wafer or other cleaning, is disclosed. A stripping mechanism can include a container to hold a chemical, such as a photoresist stripping chemical, a wafer cleaning chemical, or another type of chemical. The mechanism can also include a component to move semiconductor wafers through the chemical in the container in a Ferris wheel-like motion. The component may include wafer holders for the wafers that are swivably mounted about an axis of rotation. As the one or more wafer holders rotate about the axis of rotation through the chemical in the container, the wafer holders remain in a substantially constant vertical and horizontal orientation.

Abstract: A plant for the continuous washing of plastic material in scales. The plant having a washing apparatus, at least one filtering unit connected to the apparatus for purifying the washing fluid and means for varying the time the scales remain in the washing apparatus as a function of the quantity of scales contained at that same moment in the same apparatus.

Abstract: A wafer is rotated while cleaning water is sprayed from a nozzle to the surface of this wafer. The cleaning water is an aqueous solution in which 1 to 2.5 ppm of hydrogen gas is dissolved in water with an additional, small amount of ammonium hydroxide. The cleaning water has a pH of 7.5 to 8.0, an oxidation-reduction potential of −0.6 to −0.45 V, and a resistivity of not greater than 1 M&OHgr;·cm. And the cleaning water is reducing water.