Abstract: A substrate cleaning apparatus includes an indexer, a front surface cleaning unit for cleaning the front surface of a substrate, a back surface cleaning unit for cleaning the back surface of the substrate, a particle inspecting unit for detecting a distribution of particles adhering to the substrate, a reversing unit for reversing the substrate, and a transport section having a pair of transport units. Cleaning conditions of the front surface cleaning unit or back surface cleaning unit are varied based on the distribution of particles on the substrate after the substrate is cleaned by the front surface cleaning unit or back surface cleaning unit and inspected by the particle inspecting unit.

Abstract: The invention provides a method capable of suppressing liquid splash at the circumferential edge of a substrate, and preventing liquid droplets due to liquid splash from adhering to the substrate again when moving a discharge nozzle for scanning while discharging a cleaning solution from the discharge nozzle to the surface of the substrate to make spin drying of the substrate. When a substrate W is held in a horizontal posture by a spin chuck 10 and rotated about a vertical axis with a rotation motor 14, while discharging the cleaning solution onto the surface of the substrate from an outlet of a de-ionized water discharge nozzle 20, the rotation speed of the substrate is decreased in a process that the outlet of the discharge nozzle is traveled from a position opposed to a center of the substrate to a position opposed to the circumferential edge of the substrate.

Abstract: A filter cleaning apparatus for cleaning a filter using cleaning fluid comprises a housing, a filter holder for holding the filter, wherein the filter holder is mountable in the housing, a rotating means for rotating the filter holder, wherein the filter holder holds the filter such that when the filter holder rotates, the filter likewise rotates and, a cleaning fluid injector, wherein the cleaning fluid injector injects the cleaning fluid into the filter holder, such that when the filter holder is rotated, the cleaning fluid is forced through the filter by centrifugal force.

Abstract: A food washing apparatus of the invention includes an ozonized water generator (10), a cylindrical washing tank (1) in which the food materials are put and which can rotate to wash the food materials, a drainage part (4) formed at a part of the washing tank (1) and including openings to such a degree that water passes through and the food materials do not pass through, and wash water pipings (2, 9) which are inserted and disposed in the washing tank (1) in an axial direction and in which water spray holes (2a, 2a) for spraying wash water including at least ozonized water are formed, and while at least one part of the wash water sprayed from the wash water pipings (2, 9) is draind from the washing tank (1) every rotation of the washing tank (1), washing of the food materials is performed.

Abstract: A method for cleaning a semiconductor device has the steps of securing a wafer (16) with a modified chuck (11) and applying a cleaning solution (18) to the backside (20) of the wafer (16). The cleaning solution (18) is formulated to remove PTFE from the wafer (16). The cleaning solution (18) is applied to the edge (14) of the wafer (16) because of the characteristics of the modified chuck (11) to remove PTFE impurities that gather on the edge (14) of the wafer (16).

Abstract: A washing machine control method includes executing a dewatering step. The method accelerates a motor to rotate a drum according to a predetermined rate in response to the dewatering execution step. The method detects if the predetermined rate exceeds a first value but is less than a second value, and whether a state of vibration exists with respect to the drum rotated according to the predetermined rate; and stops the motor if the detected state of vibration exists.

Abstract: A cleaning apparatus is provided with a plurality of cleaning mechanisms such as a blast unit, a vibration brush unit and a pulse spraying unit. Cleaning of objects with the blast unit and vibration brush unit is conducted within cleaning liquid reserved in a cleaning vessel in order to prevent electrostatic discharge (ESD) breakdown. Cleaning the objects with the pulse spraying unit is conducted after taking out the objects from the cleaning liquid and thereby re-adhesion of contamination remaining in the cleaning liquid to the objects is prevented.

Abstract: A stirring nozzle used in an apparatus for abrasive wire cleaning. The stirring nozzles can be used in series to create multiple cleaning steps wherein fresh cleaning compound contacts the wire to be cleaned. The cleaning apparatus moves both the wire and an abrasive cleaning compound through the interior of the stirring nozzles. At the exit end of each stirring nozzle, cleaning compound is moved outward from the wire path. At the inlet end of each stirring nozzle, cleaning compound is moved inward toward the wire path. The sequential in-and-out movement mixes the cleaning compound.

Abstract: A method is provided, which includes moving a mobile floor cleaning machine along a floor. Onboard the mobile floor cleaning machine, a liquid is sparged by electrolysis. The sparged liquid is dispensed from the mobile floor cleaning machine.

Abstract: An apparatus for cleaning substrates includes a substrate support that is configured to support a plurality of substrates horizontally as spaced regularly one above the other, a rotating device for rotating the substrate support and a liquid supply system for dispensing cleaning liquid onto the substrates. The substrate support has a base plate and support rods extending upright on the base plate. The support rods include fixed rods and at least one movable rod. The movable rods is movable between an open position to provide a passage that allows the substrates to be placed between the support rods, and a closed position at which the substrates are held by and between the support rods. Once the substrates are supported in this way, the substrates are rotated. Then, the cleaning liquid, such as a chemical solution(s) followed by a rinsing liquid, is dispensed onto all of the substrates as the substrates are being rotated.

Abstract: Embodiments of the invention provide a semiconductor wafer cleaning apparatus and a related method. In one embodiment, the invention provides a semiconductor wafer cleaning apparatus comprising a wafer stage adapted to support a wafer; a first cleaning unit adapted to spray a first cleaning solution onto the wafer to remove particles from the wafer, wherein the first cleaning solution prevents static electricity from being generated on the surface of the wafer; and a second cleaning unit adapted to provide a second cleaning solution onto the wafer and oscillate a quartz rod to remove particles from the wafer, wherein the second cleaning solution makes a surface of the wafer hydrophilic.

Abstract: A high-pressure processing apparatus includes a processing vessel including a processing chamber formed therein to perform a certain process onto an object in the processing chamber; fluid feeding means which feeds a high-pressure fluid into the processing chamber; fluid discharging means which discharges the high-pressure fluid from the processing chamber; an agitating unit which is arranged in the processing chamber and is operative to flow the high-pressure fluid over the object by relative rotation to the processing vessel; a communicating channel which is formed in the processing vessel to communicate inside and outside of the processing chamber; a rotary driving member which is coupled to the agitating unit via a shaft portion provided in the communicating channel; and a sealing portion which is provided between the shaft portion and the processing vessel to disconnect the processing chamber from the rotary driving member.

Abstract: Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following successive steps are carried out: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried. Process for fabricating an electronic, optical or optoelectronic device, such as a CMOS or MOSFET device, comprising at least one wet cleaning step using the said cleaning method.

Abstract: An apparatus and method for the improved combined edge bead removal and backside wash of spin coated semiconductor wafers is disclosed. This is preferably accomplished by providing a nozzle having a plurality of outlets adapted for the ejection of a cleaning fluid onto the backside of a semiconductor wafer. This cleaning fluid can be EEP or a similar EBR type of solvent. This dual outlet nozzle can be mounted to a stationary EBR arm, and preferably comprises two outlets located on a beveled top surface that are separated at a predetermined angle. The angle of this beveled top surface with respect to a horizontal plane of the processed wafer is preferably about 45 degrees, while the angle of each nozzle outlet with respect to a primary axis of the stationary EBR arm is also preferably about 45 degrees. Other angles are also possible in order to maximize solvent jet efficiency.

Abstract: A plating apparatus and a plating liquid removing method removes a plating liquid remaining on a substrate-contacting portion, or portions in its vicinity, of a substrate holding member. The plating apparatus comprises a head having a rotatable housing provided with a substrate holding member for holding a substrate, a plating process container, disposed below the head, for holding a plating liquid therein, and a plating liquid removing mechanism for removing plating liquid remaining on the substrate-contacting portion, or the portions in its vicinity, at an inner circumferential edge of the substrate holding member.

Abstract: An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying cleaning solution onto the wafer, a cover for covering an upper part of the chamber, and a light source. The cleaning solution, preferably one of ozone water, hydrogen water, or electrolytic-ionized water, may be heated for a short time and used to clean the wafer.

Abstract: An inventive vertical spin-dryer is provided. The inventive spin-dryer may have a shield system positioned to receive fluid displaced from a substrate vertically positioned within the spin-dryer. The shield system may have one or more shields positioned to at least partially reflect fluid therefrom as the fluid impacts the shield. The one or more shields are angled to encourage the flow of fluid therealong, and are preferably hydrophilic to prevent droplets from forming. Preferably the shield system has three shields positioned in a horizontally and vertically staggered manner so that fluid is transferred from a substrate facing surface of a first shield to the top or non-substrate-facing surface of an adjacent shield, etc. A pressure gradient may be applied across the interior of the spin-dryer to create an air flow which encourages fluid to travel along the shield system in a desired direction.

Abstract: A cleaning method preventing foreign matter attached to a brush from being transferred back to a magnetic transfer carrier by removing foreign matter attached to a cleaning tool such as the brush with a dummy carrier having a recess equivalent to that on a surface of the magnetic transfer carrier.

Abstract: An apparatus that includes a rotatable single wafer holding bracket with one or more wafer supports disposed on the single wafer holding bracket, wherein the one or more wafer supports position a center of a wafer to be off-center from an axis of rotation of the single wafer holding bracket.

Abstract: The present invention provides a system (200, 300) for remediating aberrations along the perimeter of a semiconductor wafer (202). The system includes a cleaning apparatus (204) within which the wafer is spun within a confined area. A chuck (208) defines the confined area, having a sidewall that extends above the upper surface (214) of the wafer and surrounds the perimeter of the wafer. The chuck also has a bottom wall, with an aperture formed therein, beneath the wafer. The system includes an isolation barrier (220), disposed atop the bottom wall of the chuck and around the aperture, in proximity to the lower surface so of the wafer. This forms a narrow gap (226) between the barrier and the wafer. A pressurized source forcefully directs a gas (218) at and along the lower surface of the wafer. The system also includes a remediation solution (228) that is applied to the upper surface of the wafer.

Abstract: A method of cleaning a substrate comprises placing the substrate on a rotating fixture, placing a liquid on at least one side of the substrate, and creating a standing wave of megasonic energy oriented generally parallel to the substrate. The standing wave generates an associated pattern of high-agitation regions in the liquid. The method further comprises moving the standing wave back-and-forth so as to move the pattern of high-agitation regions about with respect to the substrate. An apparatus for cleaning substrates comprises a support to rotate the substrate about a first axis, and a transmitter extending generally parallel to a surface of the substrate. The apparatus further comprises a megasonic transducer in acoustically coupled relation to the transmitter, and a reciprocation drive in fixed relation to the transmitter. The reciprocation drive moves the transmitter back-and-forth within a plane generally parallel to the surface of the substrate.

Abstract: Methods and apparatus for cleaning hearing aid devices are disclosed. Drying is facilitated in hearing instruments through a novel combination of heater and desiccant in an essentially closed system. Greater efficiency is obtained by minimizing the volume of gas, e.g., air, requiring moisture extraction.

Abstract: Disclosed is a substrate processing method including a substrate rotating step for rotating a substrate with the substrate held almost horizontally within a chamber; a peripheral edge processing step for discharging a processing liquid to a lower surface of the substrate rotated in the substrate rotating step and causing the processing liquid to flow around an upper surface of the substrate at a peripheral edge thereof from the lower surface of the substrate to process the peripheral edge of the upper surface of the substrate in the chamber; and a both-surface processing step for discharging the processing liquid to both the surfaces of the substrate rotated in the substrate rotating step to process both the surfaces of the substrate in the chamber.

Abstract: Contaminants such as photoresist are quickly removed from a wafer having metal features, using water, ozone and a base such as ammonium hydroxide. Processing is performed at room temperature to avoid metal corrosion. Ozone is delivered into a stream of process liquid or into the process environment or chamber. Steam may alternatively be used. A layer of liquid or vapor forms on the wafer surface. The ozone moves through the liquid layer via diffusion, entrainment, jetting/spraying or bulk transfer, and chemically reacts with the photoresist, to remove it.

Abstract: The present application discloses a method of cleaning a semiconductor wafer by mounting a wafer to a chuck, positioning a gas guard, defining therein a chamber having an open bottom, immediately above the layer of water, spraying de-ionized water onto the wafer while rotating the chuck at a location outside the chamber when the wafer is mounted to the chuck, to thereby form a layer of water on the wafer, and spraying a cleaning gas from a gas spraying unit disposed above said chuck through the chamber and into the layer of water to thereby cause the cleaning gas to dissolve in the layer of water, and at the same time moving the chamber across a surface of the wafer, to thereby clean the wafer, wherein said gas spraying unit includes a gas injection tube oriented to inject the cleaning gas towards the wafer mounted to the chuck, and the gas guard connected to the gas injection tube.

Abstract: The present ball/roller bearing cleaning method is a method which, using cleaning liquid 24, cleans a bearing to be cleaned 1 composed of an inner ring 1b, an outer ring 1a, a rolling bodies 1c and a retainer. In the cleaning method, the cleaning liquid 24 is made to flow through the bearing to be cleaned 1 from the axial direction of the present bearing 1 into spaces in which the raceway surfaces of the inner and outer rings 1b and 1a of the bearing to be cleaned 1 surround the rolling bodies 1c and retainer. For example, a cylindrical-shaped rotary die 2 having spiral grooves 2a is interposed into a cleaning liquid supply passage, and the cleaning liquid 4 is supplied to thereby rotate the cylindrical-shaped rotary die 2, whereby the cleaning liquid having high pressure can be supplied to the bearing to be cleaned 1 from the cylindrical-shaped rotary die 2.

Abstract: A method for separating a substance such as a hydrocarbon from a particulate material such as soil is provided. An aqueous slurry is formed and a shear force is applied to the slurry, such as in a reversible helical screw conveyor, while the slurry is vibrated. The substance thus separated can then be removed from the particulate material.

Abstract: A supercritical fluid cleaning system uses process fluid for operating rotary motors in the chamber with fluid bearings and fluid load levitation for rotating workpieces and impellers. Rotating speed and direction sensors and a home position locator facilitate motor control. Impellers add further agitation of the fluid in the chamber, faster processing, and greater uniformity of supercritical fluid components and increase mass transfer of fluid to the processed surface. Centrifugal operated clips and cassettes hold wafers and impellers. Non-contact, fluid operated rotating mechanisms reduce contamination. Physical, rotational, and shear affects are enhanced through centrifugal forces which can induce the separation of films localized deposits or molecular products of the reaction from the surface. There is a concomitant agitation of fluid, and continuous angular acceleration imparted to the processed surface features.

Abstract: A method for spinning a wafer to enable rinsing and drying is provided. The method includes engaging the wafer at a wafer processing plane and spinning the wafer. The method further includes moving a wafer backside plate from a first position to a second position as spinning of the wafer proceeds to an optimum spinning speed. The second position defines a reduced gap between an under surface of the wafer and a top surface of the wafer backside plate. The method also includes repositioning the wafer backside plate from the second position to the first position as the spinning reduces in speed. The first position defines an enlarged gap to enable loading and unloading of the wafer from the engaged position.

Abstract: A substrate is cleaned by supplying an ultrasonically-agitated cleaning liquid onto the substrate from a nozzle provided above the substrate while spinning the substrate. The substrate being cleaned is spun at a rotational speed of 2600 rpm or more and 3500 rpm or less, or at a rotational speed of 260×V/D (rpm) or more and 350×V/D (rpm) or less, where D (mm) is a diameter of the nozzle and V (mm/sec) is a moving velocity of the nozzle.

Abstract: A method for post-etch cleaning of a substrate with MRAM structures and MJT structures and materials is disclosed. The method includes inserting the substrate into a first brush box configured for double-sided mechanical cleaning of the substrate. A non-HF, copper compatible chemistry is introduced into the first brush box for cleaning the active and backside surfaces of the substrate. The substrate is then inserted into a second brush box which is also configured to provide double-sided mechanical cleaning of the active and backside surfaces of the substrate. A burst of chemistry is introduced into the second brush box followed by a DIW rinse. The substrate is then processed through an SRD apparatus for final rinse and dry.

Abstract: A workpiece handling and processing system has a interface section for loading wafers from cassettes into carriers. The wafers are lifted out of cassettes by a buffer elevator and moved into a position over an open carrier by a buffer robot. A comb elevator lifts combs entirely through the open cassette, to transfer the wafers from the buffer robot into the carrier. A process robot moves loaded carriers from the interface section to one or more process chambers in a process section. The advantages of processing wafers within a carrier are achieved within a compact space and with high throughput.

Abstract: A system and method for cleaning boxes used for handling flat media includes a rotor rotatably mounted within an enclosure, with spray nozzles in the enclosure for spraying fluid toward the rotor. The rotor has at least one box holder assembly for holding a box. At least one retainer bar is located on the rotor for engaging a front section of the box to retain the box in the box holder assembly during rotation of the rotor. The retainer bar is preferably moveable from a first position where the retainer bar restrains the box on the box holder assembly, to a second position where the retainer bar is moved away from the box. The box holder assembly may alternatively include a base with a plurality of grooved elements thereon that are adapted to engage a flange on the box for securing the box to the box holder assembly.

Abstract: The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below ?50° C.

Abstract: A wafer chuck is configured to hold a wafer efficiently for spin process cleaning of wafer edges and back sides. A first group of retractable tips extend to hold the wafer during a first portion of the cleaning period. A second group of retractable tips extend to hold the wafer during a second portion of the cleaning period. Residues left between the tips and the wafer edge areas during the first portion of the cleaning period are removed during the second portion. The change from the first group of tips to the second group of tips occurs while the wafer is rotating.

Abstract: A gel is produced by magnetically treating and mixing two solutions and in one embodiment subsequently introducing carbon dioxide gas. The first solution is comprised of water and sodium bicarbonate, and the second solution is comprised of water and sodium silicate. The first solution is passed through a positively charged magnetic field, and the second solution is passed through a negatively charged magnetic field. The two solutions are then mixed together to form a gel. The resulting gel has excellent fire-fighting capabilities because of its high heat absorption and emissive qualities. Also disclosed is a method for using the gel to aid in the removal of surface coatings.

Abstract: A method for cleaning and drying a front and a back surface of a substrate is provided. The method includes brush scrubbing the back surface of the substrate using a brush scrubbing fluid chemistry. The method further includes applying a front meniscus onto the front surface of the substrate upon completing the brush scrubbing of the back surface. The front meniscus includes a front cleaning chemistry that is chemically compatible with the brush scrubbing fluid chemistry.

Abstract: In the drying step of the single wafer type substrate cleaning system for cleaning wafers not stored in a cassette, in a sealed cleaning housing, a spin drying treatment is applied to the wafer when the wafer is supported and rotated at high speed while an inert gas for preventing oxidation is supplied to the face of the wafer, and the amount of the inert gas to be supplied to the face of the wafer is larger at the outer peripheral portion of the wafer than that supplied at the center thereof, thereby preventing oxidation on the face of the wafer effectively while optimizing the benefits of the single wafer type cleaning system.

Abstract: A method for processing a wafer in a spin, rinse, and dry (SRD) module is provided. The method includes engaging a wafer in a process plane, spinning the wafer in the process plane, and cleaning a top surface and a bottom surface of the wafer while spinning the wafer in the process plane. The process plane is configured to define a process angle with a horizontal plane. The process angle is configured to optimize the performance of the SRD module.

Abstract: The present invention is a method of assisting the rinsing of a wafer in a single wafer cleaning apparatus. According to the present invention, after exposing a wafer to a cleaning and/or etching solution, the cleaning or etching solution is removed from the wafer by spinning the wafer and dispensing or spraying DI water onto the wafer as it is spun. The centrifugal force of the spinning wafer enhances the rinsing of the wafer. In order to enhance the rinsing of the wafer, in an embodiment of the present invention a solution having a lower surface tension than water, such as but not limited to isopropyl alcohol (IPA) is dispensed in liquid or vapor form onto the wafer after the DI water. In a specific embodiment of the present invention, the vapor of a solution with a lower surface tension than DI water, such as IPA vapor, is blown on the wafer in order to break up the DI water bulging up at the center of the spinning wafer.

Abstract: There is disclosed a substrate treating method comprising supplying a treating solution onto a substrate, and continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction, wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate, the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate.

Abstract: A method that includes rotating a wafer, heating the wafer, applying a first liquid through one or more nozzles to a center of a topside of the wafer that is cooler than the heated wafer, and translating the one or more nozzles to an outer diameter edge of the wafer.

Abstract: A system and method to clean the pellicle frame and adhesive ring of a photomask reticle are described. One embodiment includes a cover that isolates the photomasks from the pellicle frame. The reticle is secured between a spin chuck and the cover so that the photomasks are isolated and protected from solvents used in a cleaning process. With the reticle secured to the spin chuck, the spin chuck is rotated under a pressurized spray of solvent. The solvent, which is caustic to the photomasks, removes the contaminants from the adhesive ring. After the exposed areas are cleaned, the cover is removed and foreign material from photomasks are removed using less invasive solvents and methods.

Abstract: A system for processing a workpiece includes an inner chamber pivotably supported within an outer chamber. The inner chamber has an opening to allow liquid to drain out. A motor pivots the inner chamber to bring the opening at or below the level of liquid in the inner chamber. As the inner chamber turns, liquid drains out. Workpieces within the inner chamber are supported on a holder or a rotor, which may be fixed or rotating. Multi processes may be performed within the inner chamber, reducing the need to move the workpieces between various apparatus and reducing risk of contamination.

Abstract: A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Abstract: A substrate is supported at a plurality of edge positions thereof, to be in horizontal posture, by support pins erected on a spin chuck. A two-fluid nozzle is fixed to a position spaced from and directly over edges of the substrate to clean the edges. Substantially simultaneously therewith, a cleaning brush cleans the substrate while swinging over, in direct contact with, areas other than the edges of the substrate. The two-fluid nozzle delivers mist in a small quantity and in minute droplets. The mist is restrained from rebounding and scattering from the plurality of edge positions supported by the support pins of the spin chuck. The mist may be supplied to clean such positions.

Abstract: An automated semiconductor processing system has an indexer bay perpendicularly aligned with a process bay within a clean air enclosure. An indexer in the indexer bay provides stocking or storage for work in progress semiconductor wafers. Process chambers are located in the process bay. A process robot moves between the indexer bay and process bay to carry semi-conductor wafers to and from the process chambers. The process robot has a robot arm vertically moveable along a lift rail. Semiconductor wafers are carried offset from the robot arm, to better avoid contamination. The automated system is compact and requires less clean room floor space.

Abstract: An apparatus for collecting impurities on a semiconductor wafer includes an airtight process chamber, a rotary chuck disposed in the process chamber for rotating and horizontally supporting the semiconductor wafer, a first scanning unit for forming a droplet of a first scanning solution and for scanning an upper surface of the semiconductor wafer rotated by the rotary chuck with the droplet to collect first impurities, a driving unit for tilting the rotary chuck and the semiconductor wafer supported on the rotary chuck, and a second scanning unit for receiving a second scanning solution for collecting second impurities from an edge portion of the semiconductor wafer, the second scanning solution being in contact with the edge portion of the semiconductor wafer tilted by the driving unit and rotated by the rotary chuck so that the second scanning solution scans the edge portion of the semiconductor wafer.

Abstract: An X-ray fluorescence spectrometric system includes a sample pre-treatment apparatus 10 for retaining on a surface of a substrate a substance to be measured that is found on the surface of the substrate, after such substance has been dissolved and subsequently dried, an X-ray fluorescence spectrometer 40, and a transport apparatus 50 for transporting the substrate from the sample pre-treatment apparatus towards the X-ray fluorescence spectrometer, which system as a whole is easy to operate. This spectrometric system also includes a control apparatus 50 for controlling the sample pre-treatment apparatus 10, the X-ray fluorescence spectrometer 40 and the transport apparatus 50 in a totalized fashion.

Abstract: During a washing cycle of a rubber blanket on a blanket cylinder some revolutions of the blanket cylinder are initially performed during which the cleaning element is lifted off the blanket cylinder temporarily when the clamping channel passes under the cleaning element.