Abstract: A thermoelectric device having at least one unipolar couple element (22) including two legs (22a) of a same electrical conductivity type. A first-temperature stage (24) is connected to one of the two legs. A second-temperature stage (28) is connected across the legs of the at least one unipolar couple element. A third-temperature stage (30) is connected to the other of the two legs. Methods for cooling an object and for thermoelectric power conversion utilize the at least one unipolar couple element to respectively cool an object and produce electrical power.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a first plurality of openings through a first surface of a substrate, forming a p-type TFTEC material within the first plurality of openings, forming a second plurality of openings substantially adjacent to the first plurality of openings through the first surface of the substrate, and then forming an n-type TFTEC material within the second plurality of openings.

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: A thermoelectric device includes rows of thermoelectric elements, each of which includes p-type thermoelectric elements and n-type thermoelectric elements that are alternately arranged in a first direction, the n-type thermoelectric elements each having a junction area electrically connected to one of the p-type thermoelectric elements that adjoins the n-type thermoelectric element; first insulators; and a second insulator. In the thermoelectric device, the first insulators are each arranged between a corresponding one of the p-type thermoelectric elements and one of the n-type thermoelectric elements that adjoins the p-type thermoelectric element. The rows of the thermoelectric elements are arranged in a second direction perpendicular to the first direction and connected to each other.

Abstract: There is provided a thermoelectric (TE) element. The TE element includes a plurality of pn junctions each formed by bonding an n-type TE semiconductor and a p-type TE semiconductor with a metallic layer interposed therebetween, and a first electrode and a second electrode electrically connected to the n-type TE semiconductor and the p-type TE semiconductor, respectively. The plurality of pn junctions are laminated with insulating layers interposed therebetween, and are connected electrically in parallel to each other. Even in the case that a section of components does not operate electrically, the operation of the entire element is not adversely affected, thereby improving stability of the TE element.

Abstract: An apparatus and associated method to provide localized cooling to a microelectronic device are generally described. In this regard, according to one example embodiment, a cooling apparatus comprising a heat spreader and one or more thermoelectric cooler(s) thermally coupled to the heat spreader provides cooling to one or more hot spot(s) of a microelectronic device, the one or more thermoelectric cooler(s) having a single heat exchanging element of a single material.

Abstract: A thermoelectric device at least includes a ring-shaped insulated substrate and plural sets of thermoelectric thin film material pair (TEP) disposed thereon. The ring-shaped insulated substrate has an inner rim, an outer rim and a first surface. The sets of TEP electrically connected to each other are disposed on the first surface of the ring-shaped insulated substrate. Each set of TEP includes a P-type and an N-type thermoelectric thin film elements (TEE) electrically connected to each other. Also, the N-type TEE of each set is electrically connected to the P-type TEE of the adjacent set of TEP. When a current flows through the sets of TEP along a direction parallel to the surfaces of P-type and N-type thermoelectric thin film elements, a temperature difference is generated between the inner rim and the outer rim of the ring-shaped insulated substrate.

Abstract: A thermoelectric generator for converting thermal energy into electrical energy includes a plurality of Peltier elements which are coupled into a module and are arranged between a heat source and a heat sink, with each Peltier element having of a p-doped leg and an n-doped leg which are connected at their ends in an electrically conductive manner by electrodes. Both the p-doped legs and the n-doped legs of the individual Peltier elements are made of different materials, the efficiency of which is optimized with respect to the different temperature values at the contact points of the individual Peltier elements to the heat source. The high-temperature range of the p-doped legs includes MMyFe4-xCoxSb12 and/or MMyFe4-xNixSb12, with MM being a misch metal of La, Ce, Pr, Nd and Sm, and the high-temperature range of the n-doped legs includes AyCo4-xTxSb12, with A standing for Ba, Ca, Sr and a mixture thereof and T for Ni and Pd.

Abstract: In one exemplary embodiment, an assembly includes one or more thermoelectric modules, a compliant thermal interface, and a heat spreader. The compliant thermal interface is configured such that it may substantially conform against and intimately thermally contact an outer surface of a fluid conduit. The heat spreader is disposed generally between and thermally coupled to the compliant thermal interface and the one or more thermoelectric modules. The heat spreader may have greater flexibility than the one or more thermoelectric modules. The heat spreader may also have a thermal conductivity greater than the compliant thermal interface. The assembly may have sufficient flexibility to be circumferentially wrapped at least partially around a portion of the fluid conduit's outer surface, with the compliant thermal interface in substantial conformance against and in intimate thermal contact with the fluid conduit's outer surface portion.

Abstract: A thermoelectric device includes a plurality of thin-film thermoelectric elements. Each thin-film thermoelectric element is a Seebeck-Peltier device. The thin-film thermoelectric elements are electrically coupled in parallel with each other. The thermoelectric device may be fabricated using conventional semiconductor processing technologies and may be a thin-film type device.

Abstract: A thermoelectric material includes a composition represented by the following formula (A): (Tia1Zrb1Hfc1)xNiySn100-x-y??(A) where 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30?x?35, and 30?y?35. The composition includes at least two MgAgAs crystal phases different in a lattice constant, and, assuming that X-ray diffraction peak intensity from a (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant be I1 and I2, respectively, a value of I1/(I1+I2) is in a range of 0.2 to 0.8.

Abstract: A high efficiency thermo electric device comprising a multi nanolayer structure of alternating insulator and insulator/metal material that is irradiated across the plane of the layer structure with ionizing radiation. The ionizing radiation produces nanocrystals in the layered structure that increase the electrical conductivity and decrease the thermal conductivity thereby increasing the thermoelectric figure of merit. Figures of merit as high as 2.5 have been achieved using layers of co-deposited gold and silicon dioxide interspersed with layers of silicon dioxide. The gold to silicon dioxide ratio was 0.04. 5 MeV silicon ions were used to irradiate the structure. Other metals and insulators may be substituted. Other ionizing radiation sources may be used. The structure tolerates a wide range of metal to insulator ratio.

Abstract: Methods, devices, and systems, and devices for carrying out sorption (adsorption and absorption) for separating and/or purifying fluid mixtures are disclosed. Medical oxygen generators, dehumidifying units, sorptive heat pumps, ozone generators and Peltier devices are also disclosed. The sorption methods involve pressure swing operation of at least two sorption units. Energy from the desorbing and decompressing fluid is substantially recovered and used within the system.

Abstract: When electric power is obtained from a thermoelectric element, a value of electric current is changed, and two combinations of the electric current value and a voltage value (i1, V1) and (i2 and V2) are obtained. An electric current value it at which the maximum electric power Wmax can be obtained is obtained using an electric current-voltage characteristic estimated based on the obtained two combinations of the electric current value and the voltage value. The electric current is controlled such that the value of the electric current becomes equal to the obtained value it when the electric power is obtained from the thermoelectric element. The value it is represented by an equation, it=(i2V1?i1V2)/2(V1?V2).

Abstract: A thermoelectric module (1) utilizing the Peltier effect, exhibiting an element-occupied area ratio of 40% or below, the element-occupied area ratio defined as the ratio of the sum of cross-sectional areas, perpendicular to the direction of electric current passage, of thermoelectric elements (5a,5b) to the area of insulating substrate (2a) being in contact with an object to be cooled via a metalized layer (4a), wherein metalized layers (4a,4b) are provided with slits. In this construction, there can be prevented breakage of thermoelectric device by thermal stress occurring at assembly, or thermal stress occurring at pre-tinning conducted in advance for attaching an object to be cooled or at attaching package, etc.

Abstract: An apparatus and method for thermal cycling including a pasting edge heater. The pasting edge heater can provide substantial temperature uniformity throughout the retaining elements during thermal cycling by a thermoelectric module.

Abstract: Apparatus and methods for protecting process equipment from a fire and/or an explosion are provided. In particular, the apparatus and methods utilize Seebeck sensors or thermoelectric generators to detect the propagation of a flame front or deflagration wave within the process equipment. Upon detection of the deflagration wave, the system controller activates mitigation apparatus which may be in the form of a chemical suppressant or isolation valves in order to protect the process equipment from damage.

Abstract: A thermoelectric power supply converts thermal energy into a high power output with voltages in the Volt-range for powering a microelectronic device and comprises an in-plane thermoelectric generator, a cross-plane thermoelectric generator, an initial energy management assembly, a voltage converter and a final energy management assembly. The in-plane thermoelectric generator produces a high thermoelectric voltage at low power output. The initial energy management assembly rectifies and limits the thermoelectric voltage and stores and releases power to the voltage converter. The cross-plane thermoelectric generator generates a high power output at low thermoelectric voltage. Once activated by the in-plane thermoelectric generator, the voltage converter multiplies the low thermoelectric voltage output of the cross-plane thermoelectric generator.

Abstract: An apparatus for generating electrical power from the waste heat generated by an internal combustion engine includes a first pipe wall through which a heated medium flows, a thermoelectric generator disposed exteriorly to the inner pipe wall, and a second pipe wall disposed exteriorly to the thermoelectric generator. The first pipe wall and the second pipe wall form at least a partially double-walled pipe. The first pipe wall saves as a high-temperature source. The second pipe wall serves as a low-temperature source.

Abstract: The invention relates to a method for producing Peltier modules, each of which comprises several Peltier elements that are arranged between at least two substrates. The substrates are made of an electrically insulating material at least on the sides facing the Peltier elements while being provided with contact areas on said surfaces. The contact areas, to which the Peltier elements are connected by means of terminal sure during the production process, are formed by metallic areas.

Abstract: The present invention provides a non-volatile switching element having a novel structure that operates at a high speed and enables high integration, and an integrated circuit that includes such non-volatile switching elements. The switching element includes: a switching film formed on a substrate, made of a material causing a 10 times or greater change in electric resistance with a temperature change within a range of ±80 K from a predetermined temperature; a Peltier element causing the switching film to have the temperature change; a heat conducting/electric insulating film provided between the switching film and the Peltier element, to conduct heat from the Peltier element; and a pair of electrodes connected to the switching film.

Abstract: A light emitting diode (LED) package structure including a first substrate, an LED chip, a second substrate, and a thermoelectric cooling device is provided. The first substrate has a first surface and a corresponding second surface. The LED chip suitable for emitting a light is arranged on the first surface of the first substrate, and is electrically connected to the first substrate. The second substrate is below the first substrate, and has a third surface and a corresponding fourth surface. The third surface faces the second surface. The thermoelectric cooling device is arranged between the second surface of the first substrate and the third surface of the second substrate for conducting heat generated by the LED chip during operation.

Abstract: A thermoelectric module 11 includes support substrates 1a and 1b, the same numbers of N-type thermoelectric elements 2a and P-type thermoelectric elements 2b disposed on the support substrates 1a and 1b, wiring conductors 3a and 3b that electrically connect between the thermoelectric elements in series and an external connection terminal 4 electrically connected to the wiring conductor 3a. The N-type thermoelectric elements 2a and the P-type thermoelectric elements 2b have different values of resistivity.

Abstract: A connector for a thermoelectric conversion element free of a continuity failure and that is high in electrical reliability. In a thermoelectric conversion module, each thermoelectric conversion element has first and second electrode faces, and the thermoelectric conversion elements adjacent to each other are electrically connected thereto via connectors formed in a predetermined shape. Further, the connectors include a pair of fitted portions that are engagingly mounted to a first electrode face and another second electrode of the thermal electric conversion elements that are adjacent thereto, and a connection portions for connecting one pair of these fitted portions.

Abstract: A substrate having a metallic panel and an insulator is provided. The metallic panel comprises two patterned metallic layers. The two patterned metallic layers are disposed on the respective sides of the metallic panel and connected with each other. The metallic panel has an upper surface and a lower surface. The heat dissipating pathway between the upper and the lower surface is constructed using a metal. The insulator is positioned in the gaps between the patterned metallic layers.

Abstract: A method of manufacturing a thermoelectric module is provided. The method includes mounting a thermoelectric material to a substrate such that a portion of the thermoelectric material covers a removable pattern. The thermoelectric material is then segmented and the removable pattern is removed. The portions of the thermoelectric material which were covering the removable pattern are also removed, leaving the portions of the thermoelectric material not covering the removable pattern attached to the substrate.

Abstract: An electrode member for generating plasma includes an electrode plate and a cooling unit having a plurality of thermoelectric modules that are thermally in contact with the electrode plate. The thermoelectric modules may regulate the temperature of the electrode plate based on the Peltier effect.

Abstract: Energy harvesting devices are disclosed. An illustrative embodiment of the energy harvesting devices includes a fastening device, a first thermally-conductive element engaging the fastening device, a thermoelectric device disposed in thermal contact with the first thermally-conductive element and a second thermally-conductive element disposed in thermal contact with the thermoelectric device.

Abstract: A thermoelectric element includes at least one thermopair and a pn-junction. The thermopair has a first material with a positive Seebeck coefficient and a second material with a negative Seebeck coefficient. The first material is selectively contacted by way of a conductor with the p-side of the pn-junction, and the second material is selectively contacted by way of a conductor with the n-side of the pn-junction.

Abstract: A Peltier or Seebeck element has first and second conductive members having different Seebeck coefficients. To decrease the heat conduction from one to the other end of each of the conductive members, the cross-section area at the intermediate part in the length direction is smaller than those at both ends parts. In place of the decrease of the cross-section, the shape of the cross-section of the intermediate part of each of the conductive members may be changed by dividing the intermediate part into pieces, or amorphous silicon or the like having a heat conductivity lower than those of the materials of both end parts may be used for the material of the intermediate part. In such a way, a high-performance Peltier/Seebeck element such that the difference between the temperature of the heated portion of the Peltier/Seebeck element and the opposite portion can be kept to a predetermined temperature difference for a long time and its manufacturing method are provided.

Abstract: An apparatus, which may be a heater or cooler, includes a thermoelectric device group having at least one thermoelectric device and an electrical subsystem. The electrical subsystem interfaces the thermoelectric device group to an alternating current (AC) line voltage without utilizing a magnetically coupled structure. In some embodiments the electrical subsystem supplies a rectified signal having a voltage approximately equal to the magnitude of the AC line voltage. In some embodiments the AC line voltage is a standard line voltage of about 90 V to about 250 V.

Abstract: A thermoelectric conversion module which includes a good thermally conductive substrate that is inexpensive, and which secures the electrical insulating property between the good thermally conductive substrate and the electrode. The thermoelectric conversion element unit is constituted of a P-type semiconductor and an N-type semiconductor which are connected to form a ?-shape. Electrodes are connected to both end faces of the thermoelectric conversion element units. The good thermally conductive substrates are brought in contact with the electrodes. The good thermally conductive substrates consist of aluminum or an aluminum alloy, and an anode oxide film is provided between the good thermally conductive substrates and the electrodes.

Abstract: A thermoelectric conversion device of the present invention includes a first electrode, a second electrode, and a layered oxide arranged between the first electrode and the second electrode. The first electrode, the layered oxide, and the second electrode are arranged in this order so that a multilayer is formed. The layered oxide is formed of electric conductive layers and electric insulating layers being alternately arranged. The C axis of the layered oxide is perpendicular to the interface between the first electrode and the layered oxide. The area of the second electrode is smaller than that of the first electrode.

Abstract: A temperature control system may include a thermoelectric device, and a controller electrically coupled to the thermoelectric device. The controller may be configured to apply an AC signal to the thermoelectric device, and to sense an electrical characteristic of the thermoelectric device using the AC signal. The controller may also be configured to generate an electrical control signal to pump heat through the thermoelectric device responsive to sensing the electrical characteristic of the thermoelectric device using the AC signal. Related methods are also discussed.

Abstract: With conventional thermoelectric conversion materials, their thermoelectric conversion performance has been insufficient, and a problem has been to achieve stable performance in an oxidizing atmosphere and an air atmosphere. In view of this, according to the present invention, a thermoelectric material is made of a complex oxide that has vanadium oxide as its main component and is represented by the general formula AxVOx+1.5+d. Here, A is at least one selected from an alkali element, an alkaline-earth element, and a rare-earth element, x is a numerical value within the range of 0.2 to 2, and d is a non-stoichiometric ratio of oxygen and is a numerical value within the range of from ?1 to 1.

Abstract: Heat transfer to refrigerate or heat uses a thermoelectric semiconductor structure including a P-type composite of dices of semiconductor material alloyed with P-type material forming spaced collector regions at junctions with a P-type conductive material for flux of electrical current and a N-type composite of dices of semiconductor material alloyed with N-type material forming spaced collector regions at junctions with a N-type conductive material for flux of electrical current. The thickness of each the dices is sufficient to form a PN junction. Electrically conductive buss bars form an electrical circuit between the dices of N-type conductivity and the dices of P-type conductivity. An electrically conductive buss bar forms an electrical circuit connection between the dices of N-type conductivity and the dices of P-type conductivity. An electrical potential is applied by terminals between the P-type composite and the N-type composite to induce a flux of heat concurrent with the flux of electrical current.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a first plurality of openings through a first surface of a substrate, forming a p-type TFTEC material within the first plurality of openings, forming a second plurality of openings substantially adjacent to the first plurality of openings through the first surface of the substrate, and then forming an n-type TFTEC material within the second plurality of openings.

Abstract: A propulsion system for a vehicle, comprising of an internal combustion engine, a thermoelectric device in thermal communication with the engine, and a control system for controlling the engine and the thermoelectric device during a first mode, supply electrical energy to the thermoelectric device to cause the thermoelectric device to produce at least some heat, and during a second mode, operate the engine to produce at least some heat, where the thermoelectric device is operated to convert a temperature gradient at the thermoelectric device to electrical energy.

Abstract: A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.

Abstract: According to one embodiment, a thermoelectric conversion module includes a thermoelectric conversion portion, a first external electrode, and a second external electrode. The thermoelectric conversion portion includes a single thermoelectric conversion portion element, or electrically connected thermoelectric conversion portion elements. The thermoelectric conversion portion element includes a high temperature electrode, low temperature electrodes, and an n-type and a p-type thermoelectric conversion semiconductor layer disposed between the high temperature electrode and the low temperature electrodes. The first and the second external electrode are electrically connected to one of the low temperature electrode and another one of the low temperature electrode respectively.

Abstract: The present invention provides thermal transfer devices and methods for manufacturing such devices.

Abstract: A thermoelectric system comprising at least one thermoelectric module comprising a first side and a second side, and being configured to develop a temperate difference between the first side and the second side during operation, and comprising at least one first fluid manager configured to direct a first fluid along at least a first portion of the first side of the at least one thermoelectric module. Additional embodiments, cooling systems, and methods are further disclosed.

Abstract: The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the substrate, which acts as a heat sink, resulting in a net local cooling of the confined current spacer layer, enabling it to operate at both higher input voltage increased reliability.

Abstract: There are described thermoelectric elements that are manufactured by using a porous matrix or a porous substrate. The matrix consists of an electrically insulating material having sufficient thermal and chemical resistance as well as the lowest possible thermal conductivity, and is provided in predetermined regions with different thermoelectric materials, so that continuous conductors are formed in the matrix. These are electrically connected to one another to form thermocouples, which in turn are electrically interconnected with one another to form the thermoelectric element.

Abstract: This invention provides novel thermoelectric compounds comprising: a) atomic percent Ytterbium b) between 50 and 74.999 atomic percent Aluminum c) between 0.001 and 25 atomic percent Manganese and a process for their preparation.

Abstract: A thermoelectric material comprises core-shell particles having a core formed from a core material and a shell formed from a shell material. In representative examples, the shell material is a material showing an appreciable thermoelectric effect in bulk. The core material preferably has a lower thermal conductivity than the shell material. In representative examples, the core material is an inorganic oxide such as silica or alumina, and the shell material is a chalcogenide semiconductor such as a telluride, for example bismuth telluride. A thermoelectric material including such core-shell particles may have an improved thermoelectric figure of merit compared with a bulk sample of the shell material alone. Embodiments of the invention further include thermoelectric devices using such thermoelectric materials, and preparation techniques.

Abstract: Disclosed is a thermoelectric fan for use with radiant heaters, particularly catalytic heaters. The thermoelectric fan of the present invention comprises a housing sub-assembly coupled to a thermal plate sub-assembly, the housing sub-assembly comprising a shrouded circulating air moving member, such as a fan blade, powered solely by the conversion of heat from a separate heater into electricity via an integrated thermoelectric module. Also disclosed is a self-powered fan that can safely perform in hazardous atmospheres while converting radiant heat to circulate air. The thermoelectric fan of the present invention ensures that the air within the space to be heated is more effectively distributed and temperature gradients are minimized. Also disclosed are methods for assembling, installing and safe operation of the thermoelectric fan.

Abstract: A thermoelectric structure and device including at least first and second material systems having different lattice constants and interposed in contact with each other, and a physical interface at which the at least first and second material systems are joined with a lattice mismatch and at which structural integrity of the first and second material systems is substantially maintained. The at least first and second material systems have a charge carrier transport direction normal to the physical interface and preferably periodically arranged in a superlattice structure.

Abstract: The present invention provides a thermoelectric conversion element that has high efficiency even at reduced thickness. In this thermoelectric conversion element, striped p-type thermoelectric conversion parts are arranged on one surface of an insulating layer, and striped n-type thermoelectric conversion parts are arranged on the other surface. The two sets of stripes form overlapped portions. At one or more of the overlapped portions, a first p-type thermoelectric conversion part and a first n-type thermoelectric conversion part are electrically connected via a first conducting portion arranged within the insulating layer, a second p-type thermoelectric conversion part and a second n-type thermoelectric conversion part are electrically connected via a second conducting portion arranged within the insulating layer, and the first conducting portion and the second conducting portion are electrically isolated.

Abstract: The electric motor is equipped with an electronic control, for example in the form of a frequency converter (2) and comprises at least one Seebeck element (6) whose one side is connected to the motor (1) in a heat-conducting manner and whose other side is in heat-conducting connection with a cooling medium. The electrical output power of the Seebeck element (6) is led to the electronic control (2) of the motor (1).