Abstract: A method of controlling engine exhaust flow through at least one of an exhaust bypass and a thermoelectric device via a bypass valve is provided. The method includes: determining a mass flow of exhaust exiting an engine; determining a desired exhaust pressure based on the mass flow of exhaust; comparing the desired exhaust pressure to a determined exhaust pressure; and determining a bypass valve control value based on the comparing, wherein the bypass valve control value is used to control the bypass valve.

Abstract: First and second conductive members having different Seebeck coefficients are formed on an insulating substrate. The first and second conductive members are connected by ohmic contact, and the surfaces connected by ohmic contact are covered with a material sheet having a superior heat conductivity and an electric insulating property in the junction surface, such as an aluminum sheet formed with surfaces provided with electric insulating property by alumite treatment or the like. On the opposite side, bonding wires are connected with the first and second conductive members by ohmic contact. The bonding wires are insulated from one another, and used as output terminals of an integrated parallel Peltier Seebeck element chip. The thus produced integrated parallel Peltier Seebeck element chips are connected by one or more serial or parallel cables, to form energy conversion apparatus from electricity to heat and thermal energy transfer apparatus.

Abstract: Surface lighting devices including at least one light source, at least one energy storage device, and a thermoelectric power generation unit electrically coupled to the at least one energy storage device are disclosed herein. The at least one energy storage device is charged by the thermoelectric power generation unit, and the stored energy is used to illuminate the at least one light source. The surface lighting devices include a voltage step-up circuit that converts a DC voltage produced by the thermoelectric power generation unit into a higher-level DC voltage. Methods for illuminating a surface utilizing the surface lighting devices are also disclosed.

Abstract: This invention is intended to provide a mechanical building block system independent of mechanical tolerances of generator stack elements consisting of multiple parallel in plane elements that can be mass produced and mass assembled without sorting or lapping or machining in place. This implementation allows for simple maintenance of interchangeable unmatched parts.

Abstract: A thermoelectric device comprises a plurality of semiconductor elements comprising a first set of semiconductor elements and a second set of semiconductor elements, which include dissimilar electrical properties. The semiconductor elements are oriented in a substantially hexagonal array that includes rows in which semiconductor elements of the first and second sets of semiconductor elements alternate.

Abstract: Disclosed herein is a thermoelectric module. The thermoelectric module is configured by enlarging a cross-section of a P-type thermoelectric device than that of an N-type thermoelectric device, thereby making it possible to reduce unbalance in heat distribution at a high temperature side or a low temperature side of the thermoelectric module and improve thermoelectric performance.

Abstract: Disclosed herein is an AC powered thermoelectric device, including: a power supplier outputting AC power; a plurality of thermoelectric modules; and a plurality of rectifiers connected to each of the plurality of thermoelectric modules in series and applying the AC power having different polarities to each of the plurality of thermoelectric modules, whereby the positions of the hot side and the cold side are fixed to function as a heater and a cooler, while using the AC power.

Abstract: The invention is a split-thermo-electric structure for cooling, heating, or stabilizing the temperature of an object or for electric power generation. The structure of the invention is comprised of one or more legs comprised of two or more layers of thermo-electric material and a connection layer between each pair of successive layers of thermo-electric material. A layer of thermo-electric material at one end of each of the legs is located at the heat absorption side of the structure and a layer of thermo-electric material at the other end of each of the legs is located at the heat dispersion side of the structure. The structure is characterized in that the layer of thermo-electric material located at the heat absorption side of the structure and the layer of thermo-electric material at the heat dispersion side of the structure are asymmetric, i.e.

Abstract: A thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of spaced-apart, alternating p-type (4) and n-type semiconductor structural elements (5) which are disposed on said surface and which are connected to each other in series in an electrically conductive manner alternatingly at two opposite ends of the respective semiconductor structural elements by conductive structures, in such a way that a temperature difference (2?T) between the opposite ends produces an electrical voltage between the conductive structures or that a voltage difference between the conductive structures (7, 9; 13, 15) produces a temperature difference (2?T) between the opposite ends, characterized in that the semiconductor structural elements have a first boundary surface between a first and a second silicon layer, the lattice structures of which are considered ideal and are rotated by an angle of rotation relative to each other about a first axis perpendicular to the substrate su

Abstract: In a thermoelectric module comprising a series of p and n type semiconductors connected in series by conductive contacts, the conductive contacts are in contact with a substrate of moderate to high thermal conductivity that is electrically insulated from the conductive contacts by a resistive surface layer comprising a ceramic material.

Abstract: A connection structure for elements includes a first plate having an electrode layer formed on one surface of the first plate, an element connected to the electrode layer at one surface of the element and a second plate connected to the other surface of the element. A connection method for the above elements comprises the steps of: disposing the element on upper surface of the electrode layer of the first plate through solder and the second plate on upper surface of the element through conductive paste and heating the solder and the conductive paste simultaneously for melting the solder and calcining the conductive paste.

Abstract: T provide an N type thermoelectric material having figure of the merit improved to be comparable to or higher than that of P type thermoelectric material, the N type thermoelectric material of the present invention contains at least one kind of Bi and Sb and at least one kind of Te and Se as main components, and contains bromine (Br) and iodine (I) to have carrier in such a concentration that corresponds to the contents of bromine (Br) and iodine (I).

Abstract: A semiconductor heterostructure thermoelectric device (101). The semiconductor heterostructure thermoelectric device (101) includes at least one thermoelectric heterostructure unit (110). The thermoelectric heterostructure unit (110) includes a first portion (112) composed of a first semiconductor material and a second portion (114) composed of a second semiconductor material that forms a heterojunction (116) with the first portion (112). The first semiconductor material has a first electrical conductivity and a first thermal conductivity; and, the second semiconductor material has a second electrical conductivity and a second thermal conductivity. The second semiconductor material is disposed as at least one sub-micron patch (244d) of the second portion (114). In addition, the second semiconductor material includes an alloy of the first semiconductor material with an alloying constituent.

Abstract: A method of forming a thermoelectric device may include providing a substrate having a surface, and thermally coupling a thermoelectric p-n couple to a first portion of the surface of a substrate. Moreover, the thermoelectric p-n couple may include a p-type thermoelectric element and an n-type thermoelectric element. In addition, a thermally conductive field layer may be formed on a second portion of the surface of the substrate adjacent the first portion of the surface of the substrate. Related structures are also discussed.

Abstract: Heat transfer to refrigerate or heat uses a thermoelectric semiconductor structure including a P-type composite of dices of semiconductor material alloyed with P-type material forming spaced collector regions at junctions with a P-type conductive material for flux of electrical current and a N-type composite of dices of semiconductor material alloyed with N-type material forming spaced collector regions at junctions with a N-type conductive material for flux of electrical current. The thickness of each the dices is sufficient to form a PN junction. Electrically conductive buss bars form an electrical circuit between the dices of N-type conductivity and the dices of P-type conductivity. An electrically conductive buss bar forms an electrical circuit connection between the dices of N-type conductivity and the dices of P-type conductivity. An electrical potential is applied by terminals between the P-type composite and the N-type composite to induce a flux of heat concurrent with the flux of electrical current.

Abstract: A current source and method of producing the current source are provided. The current source includes a metal source, a buffer layer, a filter and a collector. An electrical connection is provided to the metal layer and semiconductor layer and a magnetic field applier may be also provided. The source metal has localized states at a bottom of the conduction band and probability amplification. The interaction of the various layers produces a spontaneous current. The movement of charge across the current source produces a voltage, which rises until a balancing reverse current appears. If a load is connected to the current source, current flows through the load and power is dissipated. The energy for this comes from the thermal energy in the current source, and the device gets cooler.

Abstract: A thermoelectric device transfers heat away from or toward an object using the Peltier effect. In some embodiments, the length of at least one thermoelectric element is at least ten times greater than a combined average cross-sectional dimension, orthogonal to the length, of two thermoelectric elements.

Abstract: New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials.

Abstract: The invention is directed to a thermoelectric module that utilizes a glass-ceramic material in place of the alumina and aluminum nitride that are commonly used in such modules. The glass-ceramic has a coefficient of thermal expansion of <10×10?7/° C. The p- and n-type thermoelectric materials can be any type of such materials that can withstand an operating environment of up to 1000° C., and they should have a CTE comparable to that of the glass-ceramic. The module of the invention is used to convert the energy wasted in the exhaust heat of hydrocarbon fueled engines to electrical power.

Abstract: A device includes a first thermally conductive substrate having a first patterned electrode disposed thereon and a second thermally conductive substrate having a second patterned electrode disposed thereon, wherein the first and second thermally conductive substrates are arranged such that the first and second patterned electrodes are adjacent to one another. The device includes a plurality of nanowires disposed between the first and second patterned electrodes, wherein the plurality of nanowires is formed of a thermoelectric material. The device also includes a joining material disposed between the plurality of nanowires and at least one of the first and second patterned electrodes.

Abstract: A thermoelectric material includes a compound represented by Formula 1: AaRbG3±n??Formula 1 wherein component A includes at least one element selected from a Group 1 element, a Group 2 element, and a metal of Groups 3 to 12, component R is a rare-earth element, component G includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0<a?1, 0<b?1, and 0?n<1.

Abstract: The invention comprises a 3D chip stack with an intervening thermoelectric coupling (TEC) plate. Through silicon vias in the 3D chip stack transfer electronic signals among the chips in the 3D stack, power the TEC plate, as well as distribute heat in the stack from hotter chips to cooler chips.

Abstract: A thermoelectric structure for cooling an integrated circuit (IC) chip comprises a first type superlattice layer formed on top of the IC chip connected to a first voltage, and a second type superlattice layer formed on the bottom of the IC chip connected to a second voltage, the second voltage being different from the first voltage, wherein an power supply current flows through the first and second type superlattice layer for cooling the IC chip.

Abstract: An improved design for maintaining nanometer separation between electrodes in tunneling, thermo-tunneling, diode, thermionic, thermoelectric, thermo-photovoltaic, current limiting, reset-able fusing, relay, circuit breaker and other devices is disclosed. At least one electrode is of a curved shape whose curvature is altered by temperature. Some embodiments use the nanometer separation to limit or stop current flow. Other embodiments reduce the thermal conduction between the two electrodes when compared to the prior art. The end result is an electronic device that maintains two closely spaced parallel electrodes in stable equilibrium with a nanometer gap there-between over a large area in a simple configuration for simplified manufacturability and use to convert heat to electricity or electricity to cooling, or limit current flow, or interrupt current flow.

Abstract: A thermoelectric structure may include a thermally conductive substrate, and a plurality of thermoelectric elements arranged on a surface of the thermally conductive substrate. Moreover, each thermoelectric element may be non-parallel and non-orthogonal with respect to the surface of the thermally conductive substrate. For example, each of thermoelectric elements may be a planar thermoelectric element, and a plane of each of the thermoelectric elements may be oriented obliquely with respect to the surface of the thermally conductive substrate.

Abstract: Improved thermoelectric assemblies are disclosed, wherein layers of heterostructure thermoelectric materials or thin layers of thermoelectric material form thermoelectric elements. The layers are bound together with agents that improve structural strengths, allow electrical current to pass in a preferred direction, and minimize or reduce adverse affects, such a shear stresses, that might occur to the thermoelectric properties and materials of the assembly by their inclusion.

Abstract: One example discloses a heat transfer device that can comprise a semiconductor material having a first region and a second region. The first region and the second region are doped to propel a charged carrier from the first region to the second region. The heat transfer device can also comprise an array of pointed tips thermoelectrically communicating with the second region. A heat sink faces the array, and a vacuum tunneling region is formed between the pointed tips and the heat sink. The heat transfer device further can further comprise a power source for biasing the heat sink with respect to the first region. The first region defines an N-type semiconductor material and the second region defines a P-type semiconductor material.

Abstract: A flexible thermoelectric device and a manufacturing method thereof are provided. Flexible substrates are formed by using LIGA process, micro-electro-mechanical process or electroforming technique. The flexible substrates are used to produce thermoelectric device. The structure and the material property of the substrates offer flexible property and tensile property to the thermoelectric device. Thermal transfer enhancement structures such as thermal via or metal diffusion layer are formed on the flexible substrates to overcome the low thermal transfer property of the flexible substrates.

Abstract: A semiconductor device is disclosed that can operate utilizing thermoelectric concepts. According to an embodiment, the semiconductor device can comprise: a source/drain conductor formed of a line of metal material on a substrate; a first gate conductor formed of a second line of metal material; and a second gate conductor formed of a third line of metal material, wherein the first gate conductor is disposed adjacent a first portion of the source/drain conductor at one end of the source/drain conductor and the second gate conductor is disposed spaced apart from the first gate conductor and adjacent a second portion of the source/drain conductor at the other end of the source/drain conductor. By applying current to the first gate conductor and the second gate conductor, current can be supplied from the one end of the source/drain conductor to the other end of the source/drain conductor.

Abstract: A thermoelectric conversion device may be made of a pair of dissimilar materials conductively joined at opposite sides, wherein at least one of said materials is a metal ion liquid solution. A thermal differential between the opposite sides creates an electric current flow and the liquid metal ion solution resists thermal equilibrium. The liquid metal ion solution may be contained by a substantially nonconductive material, such as vinyl tubing. A plurality of pairs of these dissimilar materials may be joined in series to increase the current output. The metal ion of the liquid solution may be selected, for example, from a group consisting of Lithium (Li), Sodium (Na), and Potassium (K).

Abstract: A thermoelectric module has a first substrate, a second substrate spaced from the first substrate, a plurality of P type thermoelectric elements and N type thermoelectric elements arranged in the space between the first and second substrates, and a plurality of electrodes which connect the P type and N type thermoelectric elements in series. Each electrode is connected to a respective one of the plurality of P type thermoelectric elements at a first connection and a respective one of the plurality of N type thermoelectric elements in the space, and a sealant is located at an edge portion of the space. Each one of a series of first or outer electrodes closest to the edge portion of the space has a concave portion that is concaved in a direction departing from the edge portion of the space and is at a position between the first connection and the second connection.

Abstract: A method of fabricating a light emitting diode package structure is provided. First, a first circuit substrate having a first surface and a corresponding second surface and a second circuit substrate having a third surface and a corresponding fourth surface are provided. The second surface and the third surface respectively have a plurality of electrodes. Then, a plurality of N-type semiconductor materials and a plurality of P-type semiconductor materials alternatively arranged on the electrodes are formed. Then, the first circuit substrate and the second circuit substrate are assembled. The two type semiconductor materials are located between the electrodes of the first circuit substrate and the second circuit substrate. The two type semiconductor materials are electrically connected to the first circuit substrate and the second circuit substrate through the electrodes. Finally, an LED chip is arranged on the first surface and electrically connected to the first circuit substrate.

Abstract: A measuring apparatus comprises a detector device for detecting a variable to be measured, and a controller operative to control the detector device and generate an output signal indicative of the magnitude of the variable being measured. The detector device comprises a housing on which are mounted two Peltier-Seebeck detectors, the detectors being arranged on the housing such that only the first Peltier-Seebeck detector is exposed, in use, to the variable to be measured. The controller is operative to generate the output signal based on the output of the first Peltier-Seebeck detector and the output of the second Peltier-Seebeck detector so as to account for the effect of the ambient heat on each Peltier-Seebeck detector.

Abstract: An integrated device includes a Seebeck device (4) integrated in a substrate (2). A heat-generating device (6) warms up the Seebeck device (4) generating electrical power. The Seebeck device powers a further device which may be a micro-battery (8) likewise integrated in the substrate or a Peltier effect device for cooling another heat-generating device.

Abstract: The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1?x(Sn2±ySb2±zTe5)x??(I) with 0.0001?x?0.5, 0?y<2 and 0?z<2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|?60 ?V/K at a temperature of 25° C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 ?W/(cm·K2), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.

Abstract: A process for the fabrication of high efficiency thermoelectric materials using non-equilibrium synthesis routes is described. In one embodiment a molten alloy comprising a predetermined ratio of elements which will constitute the thermoelectric material is quenched at a cooling rate in excess of, for example, 105 or 106 K/s using a process such as melt spinning. The rapidly solidified particles are then placed into a mold having the desired size and shape. The particles in the mold are simultaneously compressed and sintered at elevated temperatures for a short duration using, for example, hot pressing or spark plasma sintering. The overall process provides improved microstructural control and greatly expands the accessible phase space, permitting the formation of dense, single-phase structures with nanosized grain boundaries and minimal or no impurity segregation.

Abstract: The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.

Abstract: The invention is a Split-Thermo-Electric Structure (STES) and devices and systems that utilize said structure. The STES comprises a first thermo-electric element at an elevated temperature and a second thermo-electric element at a low (cold) temperature. The first thermo-electric element and the second thermo-electric element are connected by either an intermediate connection that conducts both electric current and heat or by a thermo-electric chain comprised of one or more thermo-electric elements. Each pair of the thermo-electric elements in the chain are connected by an intermediate connection that conducts both electric current and heat. Each of the thermo-electric elements and each of the intermediate connections in the STES exhibit a temperature-gradient. The STESs can be utilized in Seebeck or Peltier devices. The STESs can be utilized to construct devices comprised a plurality of n-type and p-type pairs of STESs, wherein each of the STESs in the device are connected at each end to a support layer.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a first plurality of openings through a first surface of a substrate, forming a p-type TFTEC material within the first plurality of openings, forming a second plurality of openings substantially adjacent to the first plurality of openings through the first surface of the substrate, and then forming an n-type TFTEC material within the second plurality of openings.

Abstract: A Peltier device manufactured into the surface of a battery cell

Abstract: A thermoelectric module includes: a plurality of thermoelectric elements that is electrically series-connected via a plurality of electrodes; and a pair of substrates on which the plurality of electrodes are formed on facing surfaces of the pair of substrates, the pair of substrates being provided perpendicularly to a heat transfer direction with the plurality of thermoelectric elements being interposed. An electrode of an upper substrate includes a first electrode having a size enough to electrically connect the thermoelectric elements that are spaced apart from each other by a distance corresponding to an area equivalent to an adjacent pair of the thermoelectric elements. An electrode of a lower substrate is provided correspondingly to a maximum placement number of the thermoelectric elements interposed between the substrates, and also has a size enough to electrically connect the adjacent pair of the thermoelectric elements.

Abstract: A thermoelectric module device includes a first substrate having inner and outer surfaces, a second substrate having inner and outer surfaces, a Peltier-junction module sandwiched between the inner surfaces of the first and second substrates, the Peltier-junction module being made up of a series of Peltier junctions including a pair of outermost Peltier junctions, a pair of power supply electrodes connected to the pair of the outermost Peltier junctions, respectively, and a metallization layer provided on the outer surface of the second substrate for being soldered to a package, the metallization layer being divided into spaced first and second portions which correspond to the Peltier-junction module and the pair of power supply electrodes, respectively.

Abstract: The invention comprises a 3D chip stack with an intervening thermoelectric coupling (TEC) plate. Through silicon vias in the 3D chip stack transfer electronic signals among the chips in the 3D stack, power the TEC plate, as well as distribute heat in the stack from hotter chips to cooler chips.

Abstract: A method for manufacturing thermopile carrier chips comprises forming first type thermocouple legs and second type thermocouple legs on a first surface of a substrate and afterwards removing part of the substrate form a second surface opposite to the first surface, thereby forming a carrier frame from the substrate and at least partially releasing the thermocouple legs from the substrate, wherein the thermocouple legs are attached between parts of the carrier frame. First type thermocouple legs and second type thermocouple legs may be formed on the same substrate or on a separate substrate. In the latter approach both types of thermocouple legs may be optimised independently. The thermocouple legs may be self-supporting or they may be supported by a thin membrane layer. After mounting the thermopile carrier chips in a thermopile unit or in a thermoelectric generator, the sides of the carrier frame to which no thermocouple legs are attached are removed.

Abstract: A thermoelectric conversion module includes a tubular element unit having a plurality of ring-like thermoelectric elements coaxially arranged with air as an insulator sandwiched inbetween. The ring-like thermoelectric element is covered approximately entirely with electrodes at its outer circumference surface and inner circumference surface, respectively, and generates electricity by temperature difference between the outer circumference surface and the inner circumference surface. A lead wire electrically connects the electrode covered on the outer circumference surface of one ring-like thermoelectric element among the plurality of ring-like thermoelectric elements to the electrode covered on the inner circumference surface of another ring-like thermoelectric element adjacent to the one ring-like thermoelectric element.

Abstract: A refrigerator apparatus includes a housing with an interior chamber, thermoelectric devices that are thermally coupled to the interior chamber, and dual redundant electronics configured to generate and apply input power to the thermoelectric devices.

Abstract: A thermogenerator is fitted with a thermal transmitter arranged between a thermal storage battery and a thermal diffuser. The transmitter preferably forms a thermal barrier with imbedded Peltier elements acting as thermal gates between the accumulator and the diffuser.

Abstract: An electronic assembly may include a packaging substrate, an integrated circuit (IC) semiconductor chip, a plurality of metal interconnection structures, and a thermoelectric heat pump. The integrated circuit (IC) semiconductor chip may have an active side including input/output pads thereon and a back side opposite the active side, and the IC semiconductor chip may be arranged with the active side facing the first surface of the packaging substrate. The plurality of metal interconnection structures may be between the active side of the IC semiconductor chip and the first surface of the packaging substrate, and the plurality of metal interconnection structures may provide mechanical connection between the active side of the IC semiconductor chip and the first surface of the packaging substrate. The thermoelectric heat pump may be coupled to the packaging substrate with the thermoelectric heat pump being configured to actively pump heat between the IC semiconductor chip and the packaging substrate.

Abstract: A thermoelectric material has a composition expressed by (TipHfqZr1-p-q)xCoy(Sb1-rSnr)100-x-y (0.1<p?0.3, 0.1<q?0.3, 0.1<r?0.8, 30?x?35 atomic %, and 30?y?35 atomic %), and includes a phase having an MgAgAs crystal structure as a main phase.

Abstract: A process for producing bulk thermoelectric compositions containing nanoscale inclusions is described. The thermoelectric compositions have a higher figure of merit (ZT) than without the inclusions. The compositions are useful for power generation and in heat pumps for instance.